CN111540805B - Semiconductor device and photoelectric detection system - Google Patents
Semiconductor device and photoelectric detection system Download PDFInfo
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- CN111540805B CN111540805B CN202010470264.9A CN202010470264A CN111540805B CN 111540805 B CN111540805 B CN 111540805B CN 202010470264 A CN202010470264 A CN 202010470264A CN 111540805 B CN111540805 B CN 111540805B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000001514 detection method Methods 0.000 title abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The application discloses a semiconductor device and a photoelectric detection system, the semiconductor device can comprise: a substrate; an epitaxial layer located above the substrate and of a first conductivity type with the substrate; a first doped region formed in the epitaxial layer at a side away from the substrate, of a second conductivity type opposite to the first conductivity type, and forming an output terminal of the semiconductor device through the first doped region; a second doped region formed at the one side and having the second conductivity type; and a third doped region formed on the one side and having the first conductivity type, wherein the second doped region is located between the first doped region and the third doped region, and the doping concentrations of the substrate, the first doped region and the third doped region are all greater than the doping concentration of the epitaxial layer. By utilizing the technical scheme provided by the application, the detection efficiency of photons with longer wavelength can be improved.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a semiconductor device and a photoelectric detection system.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
The low-flux photon detection technology is a photon detection technology capable of detecting an optical signal with a lower luminous flux density (for example, 10 -19～10-6W/mm2), and can be applied to a plurality of fields, such as medical imaging (in particular, positron Emission Tomography (PET)), homeland security, high-energy physical experiments, other imaging and other key fields.
In the technical field of low-flux photon detection, a silicon photomultiplier (Silicon Photomultiplier, abbreviated as SiPM) has been receiving great attention in recent years due to the advantages of higher detection efficiency, excellent single photon response and resolution, small volume, easy integration, low working voltage, no interference from magnetic fields, good reliability, low cost and the like. The cross-sectional structure of a conventional silicon photomultiplier is shown in fig. 1, and mainly includes: a P-type substrate or epitaxial layer on which deep N-wells (DNWs) are formed, a plurality of N-wells (NWELL) are formed in the middle of the DNWs, p+ -type doped regions are formed above the NWELL, the respective p+ -type doped regions are separated by Shallow Trench Isolation (STI) regions, and NWELL and n+ -type doped regions are formed at edges of the DNWs; and a substrate electrode composed of a P-well (PWELL) formed outside the P-type substrate/epitaxial layer and a p+ -type doped region. When the SiPM is in an operating state, the reverse bias voltage of the P+/NWELL junction is larger than the breakdown voltage of the P+/NWELL junction, so that a depletion region is formed, when photons are incident from above, photon generated carriers are mainly absorbed in the depletion region, an avalanche breakdown effect occurs in a high electric field region in the depletion region and the high electric field region is quenched by an external quenching resistor, and a current pulse signal responding to single photons is generated.
In the process of implementing the present application, the inventor finds that at least the following problems exist in the prior art:
the PN junction in the existing silicon photomultiplier is generally composed of a high-concentration P (or N) type doped region close to the surface of a silicon material and a lower doped N (or P) well below the P (or N) type doped region, the junction depth is shallower, the depletion region width is narrower, and therefore the detection efficiency of blue-violet light with shorter wavelength is higher, but the detection efficiency of photons with longer wavelength (such as red light and near infrared light) is lower.
Disclosure of Invention
An object of an embodiment of the present application is to provide a semiconductor device and a photoelectric detection system to improve the detection efficiency of photons having a longer wavelength.
In order to solve the above technical problems, embodiments of the present application provide a semiconductor device, which may include:
A substrate;
an epitaxial layer located above the substrate and of a first conductivity type with the substrate;
a first doped region formed in the epitaxial layer at a side away from the substrate, of a second conductivity type opposite to the first conductivity type, and forming an output terminal of the semiconductor device through the first doped region;
a second doped region formed at the one side and having the second conductivity type;
A third doped region formed on the one side and having the first conductivity type,
The second doped region is located between the first doped region and the third doped region, and doping concentrations of the substrate, the first doped region, the second doped region and the third doped region are all larger than doping concentrations of the epitaxial layer.
Optionally, when the semiconductor device is in an operating state, a first depletion region in a first PN junction formed between the first doped region and a corresponding region in the substrate and the epitaxial layer located below the first doped region and/or a second depletion region in a second PN junction formed between the second doped region and a corresponding region in the substrate and the epitaxial layer located below the second doped region covers at least a portion of the epitaxial layer.
Optionally, the first depletion region and the second depletion region cover to the bottom of the epitaxial layer.
Optionally, an isolation region is further formed on a side of the epitaxial layer away from the substrate to isolate the first doped region, the second doped region, and the third doped region.
Optionally, each of the isolation regions is separated from or coupled to the first, second or third doped regions flanking it.
Optionally, a buried layer of the first conductivity type is formed in the epitaxial layer below at least one of the first doped regions and/or at least one of the second doped regions, the buried layer having a doping concentration greater than the doping concentration of the epitaxial layer and less than the doping concentrations of the substrate and the second doped regions.
Optionally, each buried layer is separated from or coupled with the corresponding first doped region or second doped region.
Optionally, a corresponding well region is formed in the epitaxial layer outside at least one of the first doped region, the second doped region, and the third doped region to enclose at least a portion of the corresponding doped region therein, and the doping concentration of the well region is lower than the doping concentration of the corresponding doped region.
Optionally, the substrate and the epitaxial layer are made of elemental or compound semiconductor materials of group IVA elements.
Optionally, the substrate and the epitaxial layer are made of silicon, germanium or silicon carbide.
Optionally, the thickness of the epitaxial layer is 1-10 microns.
Optionally, the third doped region is located at two side edges of the epitaxial layer.
The embodiment of the application also provides a photoelectric detection system which can comprise the semiconductor device.
As can be seen from the technical solutions provided by the embodiments of the present application, in the semiconductor device provided by the embodiments of the present application, the first doped region, the second doped region, and the third doped region, which are of the second conductivity type, are formed on the outer surface of the epitaxial layer, which is far away from the substrate, and the output end of the semiconductor device is formed by the first doped region, and the first doped region and the third doped region are separated by the second doped region, so that compared with the case where the first doped region is adjacent to the third doped region, the width of the first depletion region in the first PN junction formed between the first doped region and the corresponding region in the epitaxial layer and the substrate when the semiconductor device is in the operating state can be increased, and the influence of the noise inside the device on the first PN junction can be reduced, so that the detection efficiency of photons with longer wavelength can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art silicon photomultiplier;
fig. 2 is a schematic structural diagram of a semiconductor device according to an embodiment of the present application;
Fig. 3 is a schematic structural view of a semiconductor device according to another embodiment of the present application;
fig. 4 is a schematic structural diagram of a semiconductor device according to another embodiment of the present application.
Detailed Description
The technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present application, and it is apparent that the described embodiments are only for explaining a part of the embodiments of the present application, not all the embodiments, and are not intended to limit the scope of the present application or the claims. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, shall fall within the scope of the application.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected/coupled" to another element, it can be directly connected/coupled to the other element or intervening elements may also be present. The term "connected/coupled" as used herein may include electrically and/or mechanically physical connections/couplings. The term "comprising" as used herein refers to the presence of a feature, step or element, but does not exclude the presence or addition of one or more other features, steps or elements. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. The terms "above" and "below" as used herein are relative terms and may also refer to below and vice versa, depending on the orientation or position of the observation.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the description of the present application, the terms "first," "second," "third," and the like are used for descriptive purposes only and to distinguish between similar objects, and there is no order of preference between the two, nor should it be construed as indicating or implying relative importance. Furthermore, in the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, the first conductivity type may refer to P-type doping, which relies primarily on hole conduction, the second conductivity type may refer to N-type doping, which relies primarily on electron conduction, alternatively the first conductivity type may refer to N-type doping, and the second conductivity type may refer to P-type doping. In addition, "p+" and "P-" may refer to relatively higher and lower doping concentrations, respectively, than the doping concentration of the P-type doped region, while "n+" and "N-" may refer to relatively higher and lower doping concentrations, respectively, than the doping concentration of the N-type doped region, e.g., the doping concentrations of the p+ and n+ doped layers/regions may be 1x10 19～1x1021cm-3, and the doping concentrations of the P-type and N-type doped layers/regions may be 1x10 16～1x1018cm-3. The doped regions or doped layers having the same conductivity type may have the same or different doping concentrations, and the doped regions or doped layers having different conductivity types may have the same or different doping concentrations, unless otherwise indicated.
The following describes in detail a semiconductor device and a photoelectric detection system for photon detection provided in an embodiment of the present application with reference to the accompanying drawings.
As shown in fig. 2, an embodiment of the present application provides a semiconductor device, which may include: a substrate 110; an epitaxial layer 120 that is located over the substrate and that is of the first conductivity type with the substrate 110; a first doped region 130 formed in the epitaxial layer 120 at a side remote from the substrate 110 in a second conductive type opposite to the first conductive type, and an output terminal of the semiconductor device may be formed through the first doped region 130; a second doped region 140 also formed in the epitaxial layer 120 on a side remote from the substrate 110 and of a second conductivity type; and a third doped region 150 also formed in the epitaxial layer 120 on a side remote from the substrate 110 and of the first conductivity type, wherein the second doped region 140 is located between the first doped region 130 and the third doped region 150 to space them apart. In addition, the doping concentrations of the substrate 110, the first doping region 130, the second doping region 140, and the third doping region 150 may be greater than the doping concentration of the epitaxial layer 120, and the doping concentrations of the substrate 110, the first doping region 130, the second doping region 140, and the third doping region 150 may be the same or different.
The substrate 110 may be an N-type doped substrate or a P-type doped substrate made of a first doping material, preferably an n+ type or a p+ type doped substrate, which generally has a higher doping concentration, and which may be the same or different from the doping concentration of the second doped region 140. Epitaxial layer 120 may be an N-type doped layer or a P-type doped layer made of a first dopant material, typically having a thickness of 1-10 microns. The first doping material may be an elemental or compound semiconductor material of group IVA elements, for example, but not limited to, silicon, germanium or silicon carbide. By forming the substrate 110 and the epitaxial layer 120 using germanium, silicon carbide, or the like, detection efficiency of visible light (e.g., red light) having a long wavelength and near-infrared light can be improved.
The first and second doped regions 130 and 140 may be filled with a second doped material having a conductivity type opposite to that of the first doped material, and the doping concentrations inside the two may be the same or different. The third doped region 150 may be filled with the first doping material, and may be located at both side edges of the epitaxial layer 120, so that more first doped regions 130 may be formed on the epitaxial layer 120, and thus photon detection efficiency may be improved. When the semiconductor device is in an operating state (i.e., an energized state), a first depletion region (shown as a dotted line region in fig. 2) in a first PN junction formed between the first doped region 130 and a corresponding region located under the first doped region 130 in the substrate 110 and the epitaxial layer 120 and/or a second depletion region (shown as a dotted line region in fig. 2) in a second PN junction formed between the second doped region 140 and a corresponding region located under the second doped region 140 in the substrate 110 and the epitaxial layer 120 may cover at least a portion of the epitaxial layer 120, which may increase the depth of the formed first and second PN junctions. Preferably, the first and second depletion regions may cover the bottom of the epitaxial layer 120, i.e., the epitaxial layer 120 is completely depleted in the depth direction, which may form a conductive path inside the semiconductor device through the third doped region 150, the epitaxial layer 120, the substrate 110, the epitaxial layer 120 to the first doped region 130, so that the depth of the formed PN junction may be increased and the width of the depletion region within the PN junction may be increased, which may further increase the effective absorption depth range of photons, increase the detection efficiency of photons having a longer wavelength (e.g., red light or near infrared light), and the electric field formed inside the semiconductor device may have higher uniformity in the horizontal direction, so that dark count pulses caused by a locally high electric field may be reduced. In addition, the formed first depletion region and/or second depletion region may also extend to the substrate 110.
In addition to the first to third doped regions 130 to 150, at least one isolation region 160 (e.g., STI region) may be formed in the epitaxial layer 120 at a side remote from the substrate 110 to space the first and second doped regions 130 and 140 apart from each other by the third doped region 150. The isolation regions 160 may be separated from the first doped region 130, the second doped region 140 or the third doped region 150 (as shown in fig. 2) on the side thereof, so as to reduce noise, or may be coupled to the first doped region 130, the second doped region 140 or the third doped region 150 on the side thereof (as shown in fig. 3), so as to improve electrical performance.
In addition, a buried layer 170 (e.g., a P-type buried layer or an N-type buried layer) of a first conductivity type may be formed in the epitaxial layer 120 under at least one of the first doping regions 130 (preferably, all of the first doping regions 130), the buried layers 170 are located near one side of the corresponding first doping regions 130, respectively, and the doping concentration of the buried layers 170 may be greater than that of the epitaxial layer 120 and less than that of the substrate 110 and the third doping regions 150. Each buried layer 170 may be separated from (as shown in fig. 2) or coupled to (as shown in fig. 3) the first doped region 130 located thereabove to reduce noise or improve electrical performance. By forming the buried layer 170 in the epitaxial layer 120, the width of the first depletion region in the formed first PN junction can be further increased, so that the photon absorption depth range and photon detection efficiency can be improved. In addition, a buried layer 170 may also be formed in the epitaxial layer 120 under at least one second doped region 140 (preferably, all of the second doped regions 140).
In addition, a corresponding well region may be formed in the epitaxial layer 120 outside at least one of the first, second, and third doped regions 130, 140, and 150 to enclose at least a portion of the corresponding doped region (the first, second, or third doped regions 130, 140, or 150) therein, and the well region may have a doping concentration lower than that of the corresponding doped region, and each well region may have the same conductivity type as the corresponding doped region. For example, as shown in fig. 4, a first well region 180 of the second conductivity type may be formed outside the first doped region 130 within the epitaxial layer 120, and the first well region 180 may enclose at least a portion of the first doped region 130 therein to form protection for the first doped region 130. The first well region 180 may be located at a lower side between the first doped region 130 and the isolation region 160, and the doping concentration of the first well region 180 may be lower than that of the first doped region 130. A second well region 141 of the second conductivity type may also be formed in the epitaxial layer 120 outside the second doped region 140 to enclose at least a portion of the second doped region 140 therein, thereby forming protection for the second doped region 140. The second well region 141 may have a doping concentration lower than that of the second doped region 140, and may be the same as the first well region 180.
As another example, as shown in fig. 2-4, a third well region 190 of the first conductivity type may be formed within the epitaxial layer 120 outside of the third doped region 150, and the third well region 190 may enclose at least a portion of the third doped region 150 therein to enhance conductivity between the third doped region 150 to the substrate 110. The doping concentration of the third well region 190 may be lower than the doping concentration of the third doping region 150. The third doped region 150 and the third well region 190 may constitute one electrode of the semiconductor device. For example, when the third doped region 150 is a p+ type doped region and the third well region 190 is a P well, both may constitute an anode, and when the third doped region 150 is an n+ type doped region and the third well region 190 is an N well, both may constitute a cathode. In addition, another electrode of the semiconductor device may be formed through the first doped region 130 as an output terminal (not shown) of the semiconductor device. A bias voltage may be provided to a conductive path formed within the semiconductor device through the two electrodes for photon detection. For the process of how to form the electrode on the doped region, reference may be made to the corresponding description in the prior art, and no further description is given here.
As can be seen from the above description, in the embodiment of the present application, the first doped region, the second doped region, and the third doped region, which are located at both sides of the second doped region and are of the first conductivity type, are formed on the outer surface of the epitaxial layer, which is far away from the substrate, so that the first doped region and the third doped region are separated by the second doped region, which can increase the width of the first depletion region in the first PN junction formed between the first doped region and the corresponding region in the epitaxial layer and the substrate when the semiconductor device is in an operating state, and can reduce the influence of the device internal noise on the first PN junction, so that the detection efficiency of photons with longer wavelength can be improved. In addition, when the semiconductor device is in an operating state, depletion regions in the first PN junction and the second PN junction formed in corresponding regions in the substrate and the epitaxial layer located below the first doping region and the second doping region may cover the bottom of the epitaxial layer, which may form a conductive path constituted by the third doping region, the epitaxial layer, the substrate, the epitaxial layer, and the first doping region, so that the depth of the first PN junction and the width of the first depletion region may be further increased, and further photon detection efficiency may be further improved.
In addition, the embodiment of the application also provides another photoelectric detection system, which can comprise the semiconductor device described in all the embodiments. The photoelectric detection system may detect photons emitted from a target object (e.g., a patient or animal injected with a tracer, etc.) using the above-described semiconductor device and process photon data detected by the semiconductor device to obtain corresponding information of the target object.
For a description of other components of the photodetection system, reference may be made to the prior art, and no further description is given here.
The systems, devices, modules, units, etc. set forth in the above embodiments may be implemented in particular by chips and/or entities (e.g., discrete components) or by products having certain functions. For convenience of description, the above devices are described as being functionally divided into various layers, respectively. Of course, the functions of the layers may be integrated into the same chip or chips when implementing the embodiments of the present application.
While the present application provides the components described in the embodiments or figures above, more or fewer components may be included in the apparatus, either on a regular or non-creative basis. In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments.
The embodiments described above are described in order to facilitate the understanding and use of the present application by those of ordinary skill in the art. It will be apparent to those skilled in the art that various modifications can be made to these embodiments and that the general principles described herein may be applied to other embodiments without the need for inventive faculty. Therefore, the present application is not limited to the above-described embodiments, and those skilled in the art, based on the present disclosure, should make improvements and modifications without departing from the scope of the present application.
Claims (11)
1. A semiconductor device, characterized in that the semiconductor device comprises:
A substrate;
an epitaxial layer located above the substrate and of a first conductivity type with the substrate;
a first doped region formed in the epitaxial layer at a side away from the substrate, of a second conductivity type opposite to the first conductivity type, and forming an output terminal of the semiconductor device through the first doped region;
a second doped region formed at the one side and having the second conductivity type;
A third doped region formed on the one side and having the first conductivity type,
Wherein the second doped region is located between the first doped region and the third doped region, and the doping concentrations of the substrate, the first doped region, the second doped region and the third doped region are all greater than the doping concentration of the epitaxial layer;
When the semiconductor device is in an operating state, a first depletion region in a first PN junction formed between the first doped region and corresponding regions in the substrate and the epitaxial layer located below the first doped region and/or a second depletion region in a second PN junction formed between the second doped region and corresponding regions in the substrate and the epitaxial layer located below the second doped region covers at least a portion of the epitaxial layer;
A buried layer of the first conductivity type is formed in the epitaxial layer below at least one of the first doped regions and/or at least one of the second doped regions, the buried layer having a doping concentration greater than the doping concentration of the epitaxial layer and less than the doping concentrations of the substrate and the second doped regions.
2. The semiconductor device according to claim 1, wherein the first depletion region and the second depletion region cover to a bottom of the epitaxial layer.
3. The semiconductor device according to claim 1, wherein an isolation region is further formed in the epitaxial layer on a side away from the substrate to separate the first doped region, the second doped region, and the third doped region.
4. The semiconductor device of claim 3, wherein each of the isolation regions is separated from or coupled to the first, second, or third doped regions of its sides.
5. The semiconductor device of claim 1, wherein each buried layer is separate from or coupled to the corresponding first doped region or second doped region.
6. The semiconductor device according to claim 1, wherein a corresponding well region is formed in the epitaxial layer outside at least one of the first doped region, the second doped region, and the third doped region so as to surround at least a portion of the corresponding doped region therein, and wherein a doping concentration of the well region is lower than a doping concentration of the corresponding doped region.
7. The semiconductor device according to claim 1, wherein the substrate and the epitaxial layer are made of elemental or compound semiconductor material of group iva element.
8. The semiconductor device of claim 7, wherein the substrate and the epitaxial layer are made of silicon, germanium, or silicon carbide.
9. The semiconductor device according to claim 1, wherein a thickness of the epitaxial layer is 1 to 10 μm.
10. The semiconductor device of claim 1, wherein the third doped regions are located at two side edges of the epitaxial layer.
11. A photodetection system, characterized in that the photodetection system comprises the semiconductor device according to any one of claims 1-10.
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