CN107026212A - A kind of double PN junction single-photon avalanche diode structures based on standard technology - Google Patents
A kind of double PN junction single-photon avalanche diode structures based on standard technology Download PDFInfo
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- CN107026212A CN107026212A CN201610062186.2A CN201610062186A CN107026212A CN 107026212 A CN107026212 A CN 107026212A CN 201610062186 A CN201610062186 A CN 201610062186A CN 107026212 A CN107026212 A CN 107026212A
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- 238000005516 engineering process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
Abstract
A kind of double PN junction single-photon avalanche diode structures based on standard technology, the structure is longitudinally including two PN junctions, and for detecting photon signal, its basic structure includes：P-type silicon substrate（4）Top is provided with deep N-well（3）, p-substrate passes through heavily doped P-type region（1）And p-well region（2）Connection electrode（11）, form Ohmic contact, deep N-well（3）And P type substrate（4）Between formed a PN junction（13）；Deep N-well（3）Inside include a p-well region（2）, p-well（3）Pass through heavily doped P-type region（1）It is connected to electrode（9）；Deep N-well（3）Pass through N traps（6）And heavily doped N-type region（5）It is connected to electrode（10）, form Ohmic contact；Deep N-well（3）With the p-well included inside it（2）Form a PN junction（12）.PN junction（12）With（13）Form two photosensitive areas of proposed by the present invention pair of PN junction single-photon avalanche diode.
Description
Technical field
The present invention is a kind of pair of PN junction single-photon avalanche diode structure, and the specific realization in standard CMOS process
Its preparation method.
Background technology
In fields such as faint photoimaging, high speed imaging and quantum communications, it is necessary to the efficient, single photon detection of low noise
Device.Now commonly used photomultiplier PMT needs high steering voltage, and cellular construction volume is big, it is impossible to extensive
It is integrated.Silicon avalanche photodiode APD is the range of linearity for being operated in PN junction, and operating voltage is less than avalanche voltage, so it increases
Benefit is generally not more than 1000, it is impossible to realize single photon detection.Electron multiplication CCD, i.e. EM-CCD, its gain can apply with it is micro-
Weak light detection, but its working frequency is relatively low, temporal resolution does not reach the application of photon counting.
Single-photon avalanche diode (SPAD), i.e. geiger mode avalanche photodiodes GM-APD, its basic structure are one
The PN junction of individual plane, operating voltage is located on PN junction avalanche breakdown voltage.When the operating voltage of plane PN junction gradually approaches snow
When collapsing voltage, the avalanche multiplication factor will tend to be infinitely great in theory, and in fact, when operating voltage is less than avalanche voltage, times
Increase the factor to will saturation when 1000 or so.Only under Geiger mode angular position digitizer, i.e., when operating voltage is higher than avalanche breakdown voltage, multiplication
The factor can just be large enough to catch single photon.
Single-photon avalanche diode can realize that the device property that every kind of structure is finally pursued is low with various structures
Dark noise, high time resolution and can integrated level.Meanwhile, while device superperformance is ensured, its manufacture craft is also needed
Simple and convenient and economy is wanted, the single-photon avalanche diode that therefore, it can be realized with standard CMOS process just meets market need
Ask.
A kind of pair of PN junction single-photon avalanche diode structure proposed by the present invention, by the diverse location depth of PN junction,
Realize and the selectivity of lambda1-wavelength is detected, effectively increase photon detection efficiency.
The content of the invention
The present invention proposes a kind of pair of PN junction single-photon avalanche diode structure, and its basic structure is configured to：P-type silicon is served as a contrast
Bottom（4）Top is provided with deep N-well（3）, p-substrate passes through heavily doped P-type region（1）And p-well region（2）Connection electrode（11）,
Form Ohmic contact, deep N-well（3）And P type substrate（4）Between formed a PN junction（13）；Deep N-well（3）Inside include a p-well region
Domain（2）, p-well（3）Pass through heavily doped P-type region（1）It is connected to electrode（9）；Deep N-well（3）Pass through N traps（6）And heavily doped N-type
Region（5）It is connected to electrode（10）, form Ohmic contact；Deep N-well（3）With the p-well included inside it（2）Form a PN junction
（12）.PN junction（12）With（13）Form two photosensitive areas of proposed by the present invention pair of PN junction single-photon avalanche diode.In electrode
（9）、（10）With（11）It is upper to apply appropriate voltage, make PN junction（12）With（13）It is operated under Geiger mode angular position digitizer, so as to form monochromatic light
Two multiplication regions of sub- avalanche diode, realize the detection to photon signal.
The beneficial effects of the invention are as follows：（1）Device longitudinally comprising two PN junctions, can be achieved to select the wavelength of incident light
Property detection, improve photon detection efficiency；（2）Device technology is completely compatible with standard CMOS process, effectively reduces production cost, warp
Ji is practical；（3）Device architecture scalability is good, is conducive to the large-scale integrated of device.
Brief description of the drawings
Subject of the present invention is specifically described in detail now with reference to the following drawings, and the relevant structure of the present invention is expressly understood
With implementation method and its purpose, feature and advantage：
Fig. 1 is change curve of penetration depth of the light in silicon with wavelength；
Fig. 2 is double PN junction single-photon avalanche diode structural representations of the present invention；
Fig. 3 is double PN junction single-photon avalanche diode fundamental diagrams of the present invention.
Embodiment
In order to deepen thorough understanding of the present invention, in the following detailed description, specific details is described:If half
The type of conductor doping is opposite（I.e. n-type doping replaces p-type doping）, and voltage, anode and negative electrode etc. are appropriate on the contrary, then on P
The example that type and n type material are provided is used on an equal basis.Present invention assumes that using P type substrate, this is most standard in standard CMOS process
The substrate type used.
Incident depth of the incident light in silicon is different and different with wavelength, and Fig. 1 shows incident light in silicon
Penetration depth and wavelength graph of relation.As seen from Figure 1, wavelength is longer, and the depth that it is penetrated in silicon is deeper.Cause
This, for the detection incident intensity signal of maximal efficiency, it is more deep better that photosensitive area is also required in longitudinal direction.But, any PN junction is all
There is its specific depletion region depth, therefore, expanding the depletion region of PN junction to greatest extent to improve photon detection efficiency turns into single
The basic thinking of one of photon avalanches diode design.
Fig. 2 is the structural representation of double PN junction single-photon avalanche diodes of the present invention, described double PN junction monochromatic lights
Sub- avalanche diode structure is constituted：P-type silicon substrate（4）Top is provided with deep N-well（3）, p-substrate passes through heavily doped P-type region
（1）And p-well region（2）Connection electrode（11）, form Ohmic contact, deep N-well（3）And P type substrate（4）Between formed a PN
Knot（13）；Deep N-well（3）Inside include a p-well region（2）, p-well（3）Pass through heavily doped P-type region（1）It is connected to electrode（9）；
Deep N-well（3）Pass through N traps（6）And heavily doped N-type region（5）It is connected to electrode（10）, form Ohmic contact；Deep N-well（3）With
The p-well included inside it（2）Form a PN junction（12）.PN junction（12）With（13）Form proposed by the present invention pair of PN junction single photon
Two photosensitive areas of avalanche diode.In electrode（9）、（10）With（11）It is upper to apply appropriate voltage, make PN junction（12）With（13）
It is operated under Geiger mode angular position digitizer, so as to form two multiplication regions of single-photon avalanche diode, realizes the detection to photon signal.
The working mechanism and process of described double PN junction single-photon avalanche diodes are as follows：
As shown in Figures 2 and 3, PN junction（12）Type be deep N-well（3）With p-well shape（2）Into PN junction, PN junction（13）For deep N-well
（3）With P type substrate（4）The PN junction of formation, due to p-well（2）And P type substrate（4）Doping concentration it is different, two PN junctions（12）With
（13）Avalanche breakdown voltage it is also different, p-well（2）Doping concentration be more than P type substrate（4）, therefore PN junction（12）Breakdown potential
Pressure is less than PN junction（13）.By P type substrate（4）Pass through electrode（11）Ground connection, deep N-well（3）Pass through electrode（10）Apply voltage VDNW,
Deep N-well（3）Internal p-well（2）Pass through electrode（9）Apply voltage VPW, PN junction（12）Breakdown voltage be V12, PN junction（13）'s
Breakdown voltage is V13, it is as follows that for example each electrode of PN junction mode of operation applies voltage relationship：
（1）Work as VDNW＞ V13, VDNW- VPW＜ V12When, PN junction（13）Geiger mode angular position digitizer is operated in, photon detection, PN junction can be carried out
（12）It is stopped；
（2）Work as VDNW＜ V13, VDNW- VPW＞ V12When, PN junction（13）It is stopped, PN junction（12）Geiger mode angular position digitizer is operated in, can be with
Carry out photon detection.
（3）Work as VDNW＞ V13, VDNW- VPW＞ V12When, PN junction（12）And PN junction（13）Geiger mode angular position digitizer is operated in, can
Carry out photon detection.
PN junction（12）In shallower position, there is high detection efficient, long wavelength's incidence optical detection effect to short wavelength's incident light
Rate is slightly lower.PN junction（13）In deep place, there is high detection efficient to long wavelength's incident light, to short-wavelength light detection efficient compared with
It is low.Therefore, when two PN junctions work simultaneously, this single-photon avalanche diode is respectively provided with high detection effect to each wave band incident light
Rate, effectively raises the detection efficient of single-photon avalanche diode.In summary, double PN junction single-photon avalanches of the invention
Diode realizes effective detection to each wave band incident light on standard CMOS process, improves the spy of single-photon avalanche diode
Survey efficiency.
Claims (2)
1. a kind of double PN junction single-photon avalanche diode structures based on standard CMOS process, described double PN junction single photons
The architectural feature of avalanche diode is：P-type silicon substrate（4）Top is provided with deep N-well（3）, p-substrate passes through heavily doped P-type region
（1）And p-well region（2）Connection electrode（11）, form Ohmic contact, deep N-well（3）And P type substrate（4）Between formed a PN
Knot（13）；Deep N-well（3）Inside include a p-well region（2）, p-well（3）Pass through heavily doped P-type region（1）It is connected to electrode（9）；
Deep N-well（3）Pass through N traps（6）And heavily doped N-type region（5）It is connected to electrode（10）, form Ohmic contact；Deep N-well（3）With
The p-well included inside it（2）Form a PN junction（12）；PN junction（12）With（13）Form proposed by the present invention pair of PN junction single photon
Two photosensitive areas of avalanche diode；In electrode（9）、（10）With（11）It is upper to apply appropriate voltage, make PN junction（12）With（13）
It is operated under Geiger mode angular position digitizer, so as to form two multiplication regions of single-photon avalanche diode, realizes the detection to photon signal.
2. according to claim 1 pair of PN junction single-photon avalanche diode structure, it is characterised in that a single photon snow
Diode is collapsed while including two PN junctions, two PN junctions are sequentially distributed in longitudinal direction, form the spy to different wave length incident optical signal
Survey region.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946389A (en) * | 2017-11-14 | 2018-04-20 | 重庆邮电大学 | A kind of CMOS single-photon avalanche diodes for long-wave band faint light |
| CN108511467A (en) * | 2018-03-06 | 2018-09-07 | 南京邮电大学 | A kind of CMOS single photon avalanche diode detectors of near-infrared wide spectrum and preparation method thereof |
| CN108550592A (en) * | 2018-04-02 | 2018-09-18 | 重庆邮电大学 | A kind of low dark count rate CMOS SPAD photoelectric devices |
| CN110197859A (en) * | 2019-06-28 | 2019-09-03 | 重庆邮电大学 | It is a kind of to work in the high bandwidth CMOS APD photoelectric device of visible light wave range |
| CN114284376A (en) * | 2020-09-28 | 2022-04-05 | 宁波飞芯电子科技有限公司 | Single photon avalanche diode detector |
| CN114914324A (en) * | 2021-02-09 | 2022-08-16 | 爱思开海力士有限公司 | Single photon avalanche diode |
| CN115548157A (en) * | 2022-12-05 | 2022-12-30 | 西安电子科技大学 | Double-junction single-photon avalanche diode with wide drift region and preparation method thereof |
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| CN103299437A (en) * | 2010-09-08 | 2013-09-11 | 爱丁堡大学评议会 | Single photon avalanche diode for CMOS circuits |
| CN103779437A (en) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | Single-photon-level resolution ratio sensor unit structure based on standard CMOS technology |
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| US20100019295A1 (en) * | 2008-07-10 | 2010-01-28 | Stmicroelectronics (Research & Development) Limited | Single photon avalanche diodes |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946389A (en) * | 2017-11-14 | 2018-04-20 | 重庆邮电大学 | A kind of CMOS single-photon avalanche diodes for long-wave band faint light |
| CN108511467A (en) * | 2018-03-06 | 2018-09-07 | 南京邮电大学 | A kind of CMOS single photon avalanche diode detectors of near-infrared wide spectrum and preparation method thereof |
| CN108511467B (en) * | 2018-03-06 | 2020-06-19 | 南京邮电大学 | Near-infrared wide-spectrum CMOS single-photon avalanche diode detector and manufacturing method thereof |
| CN108550592A (en) * | 2018-04-02 | 2018-09-18 | 重庆邮电大学 | A kind of low dark count rate CMOS SPAD photoelectric devices |
| CN108550592B (en) * | 2018-04-02 | 2020-08-04 | 重庆邮电大学 | Low dark count rate CMOS SPAD photoelectric device |
| CN110197859A (en) * | 2019-06-28 | 2019-09-03 | 重庆邮电大学 | It is a kind of to work in the high bandwidth CMOS APD photoelectric device of visible light wave range |
| CN114284376A (en) * | 2020-09-28 | 2022-04-05 | 宁波飞芯电子科技有限公司 | Single photon avalanche diode detector |
| CN114284376B (en) * | 2020-09-28 | 2024-03-15 | 宁波飞芯电子科技有限公司 | Single photon avalanche diode detector |
| CN114914324A (en) * | 2021-02-09 | 2022-08-16 | 爱思开海力士有限公司 | Single photon avalanche diode |
| CN115548157A (en) * | 2022-12-05 | 2022-12-30 | 西安电子科技大学 | Double-junction single-photon avalanche diode with wide drift region and preparation method thereof |
| CN115548157B (en) * | 2022-12-05 | 2023-03-07 | 西安电子科技大学 | Double-junction single-photon avalanche diode with wide drift region and preparation method thereof |
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