CN105810575B - 一种GaN HEMT上低温欧姆接触的制备方法 - Google Patents
一种GaN HEMT上低温欧姆接触的制备方法 Download PDFInfo
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- CN105810575B CN105810575B CN201610240037.0A CN201610240037A CN105810575B CN 105810575 B CN105810575 B CN 105810575B CN 201610240037 A CN201610240037 A CN 201610240037A CN 105810575 B CN105810575 B CN 105810575B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 33
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- 239000000463 material Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 14
- 229910003910 SiCl4 Inorganic materials 0.000 claims abstract 3
- 238000000137 annealing Methods 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 2
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- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 abstract description 11
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
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Priority Applications (1)
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CN201610240037.0A CN105810575B (zh) | 2016-04-18 | 2016-04-18 | 一种GaN HEMT上低温欧姆接触的制备方法 |
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CN201610240037.0A CN105810575B (zh) | 2016-04-18 | 2016-04-18 | 一种GaN HEMT上低温欧姆接触的制备方法 |
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CN105810575A CN105810575A (zh) | 2016-07-27 |
CN105810575B true CN105810575B (zh) | 2018-12-28 |
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CN109728087B (zh) * | 2019-01-08 | 2020-09-08 | 西安电子科技大学 | 基于纳米球掩模的低欧姆接触GaN基HEMT制备方法 |
US11942525B2 (en) | 2020-04-22 | 2024-03-26 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device with multichannel heterostructure and manufacturing method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130105863A1 (en) * | 2011-10-27 | 2013-05-02 | Samsung Electronics Co., Ltd. | Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same |
CN103928311A (zh) * | 2014-05-08 | 2014-07-16 | 西安电子科技大学 | Hemt器件的欧姆接触电极制作方法 |
CN103928324A (zh) * | 2014-03-24 | 2014-07-16 | 中国电子科技集团公司第五十五研究所 | 铝镓氮化合物/氮化镓高电子迁移率晶体管的制造方法 |
CN103972069A (zh) * | 2014-05-08 | 2014-08-06 | 西安电子科技大学 | AlGaN-GaN异质结欧姆接触制作方法 |
CN105118780A (zh) * | 2015-07-30 | 2015-12-02 | 中国电子科技集团公司第五十五研究所 | 一种降低GaN HEMT器件欧姆接触电阻的方法 |
CN105390382A (zh) * | 2015-10-22 | 2016-03-09 | 中国科学院微电子研究所 | 一种iii族氮化物电子器件低温欧姆接触的制作方法 |
-
2016
- 2016-04-18 CN CN201610240037.0A patent/CN105810575B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130105863A1 (en) * | 2011-10-27 | 2013-05-02 | Samsung Electronics Co., Ltd. | Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same |
CN103928324A (zh) * | 2014-03-24 | 2014-07-16 | 中国电子科技集团公司第五十五研究所 | 铝镓氮化合物/氮化镓高电子迁移率晶体管的制造方法 |
CN103928311A (zh) * | 2014-05-08 | 2014-07-16 | 西安电子科技大学 | Hemt器件的欧姆接触电极制作方法 |
CN103972069A (zh) * | 2014-05-08 | 2014-08-06 | 西安电子科技大学 | AlGaN-GaN异质结欧姆接触制作方法 |
CN105118780A (zh) * | 2015-07-30 | 2015-12-02 | 中国电子科技集团公司第五十五研究所 | 一种降低GaN HEMT器件欧姆接触电阻的方法 |
CN105390382A (zh) * | 2015-10-22 | 2016-03-09 | 中国科学院微电子研究所 | 一种iii族氮化物电子器件低温欧姆接触的制作方法 |
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Application publication date: 20160727 Assignee: Nanjing Zhongdian Core Valley High Frequency Device Industry Technology Research Institute Co., Ltd. Assignor: China Electronics Technology Group Corporation No.55 Research Institute Contract record no.: X2020980000164 Denomination of invention: Fabrication method for low-temperature ohmic contact on GaN high electron mobility transistor (HEMT) Granted publication date: 20181228 License type: Common License Record date: 20200119 |