CN105793959B - 衬底处理设备 - Google Patents
衬底处理设备 Download PDFInfo
- Publication number
- CN105793959B CN105793959B CN201380081398.XA CN201380081398A CN105793959B CN 105793959 B CN105793959 B CN 105793959B CN 201380081398 A CN201380081398 A CN 201380081398A CN 105793959 B CN105793959 B CN 105793959B
- Authority
- CN
- China
- Prior art keywords
- substrate
- gas
- chamber
- ontology
- intermediate region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 147
- 230000037361 pathway Effects 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims description 51
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 230000001976 improved effect Effects 0.000 abstract description 3
- 239000007921 spray Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 156
- 238000000034 method Methods 0.000 description 34
- 239000010408 film Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000008093 supporting effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130151693A KR101518398B1 (ko) | 2013-12-06 | 2013-12-06 | 기판 처리 장치 |
| KR10-2013-0151693 | 2013-12-06 | ||
| PCT/KR2013/012331 WO2015083884A1 (ko) | 2013-12-06 | 2013-12-27 | 기판 처리 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105793959A CN105793959A (zh) | 2016-07-20 |
| CN105793959B true CN105793959B (zh) | 2019-03-26 |
Family
ID=53273617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380081398.XA Active CN105793959B (zh) | 2013-12-06 | 2013-12-27 | 衬底处理设备 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101518398B1 (ko) |
| CN (1) | CN105793959B (ko) |
| WO (1) | WO2015083884A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101929192B1 (ko) * | 2015-09-22 | 2018-12-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 샤워헤드 지지 구조들 |
| KR101905640B1 (ko) * | 2016-04-12 | 2018-10-10 | 피에스케이 주식회사 | 기판 처리 장치 |
| KR102518372B1 (ko) * | 2018-03-23 | 2023-04-06 | 삼성전자주식회사 | 가스 분배 장치, 이를 포함하는 기판 처리 장치 및 이를 이용하는 반도체 공정 방법 |
| KR20210088723A (ko) * | 2018-12-03 | 2021-07-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 척킹 및 아크 발생 성능이 개선된 정전 척 설계 |
| CN109881187A (zh) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | 一种气相沉积腔室 |
| CN110093593A (zh) * | 2019-05-20 | 2019-08-06 | 北京捷造光电技术有限公司 | 一种用于大面积pecvd工艺腔室双层排气结构 |
| KR102404571B1 (ko) * | 2019-11-05 | 2022-06-07 | 피에스케이 주식회사 | 기판 처리 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861837A (zh) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | 用于沉积多晶硅的cvd装置 |
| TW200837867A (en) * | 2007-02-06 | 2008-09-16 | Sosul Co Ltd | Apparatus for forming a layer |
| CN103035469A (zh) * | 2011-10-05 | 2013-04-10 | 应用材料公司 | 对称等离子体处理室 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL116156A0 (en) * | 1994-12-05 | 1996-01-31 | Hughes Aircraft Co | Cooled gas distribution system for a plasma |
| WO2001046498A2 (en) * | 1999-12-22 | 2001-06-28 | Aixtron Ag | Chemical vapor deposition reactor and process chamber for said reactor |
| KR100491241B1 (ko) * | 2003-07-22 | 2005-05-25 | 주식회사 테라세미콘 | 매엽식 반도체 제조장치 |
| KR101329570B1 (ko) * | 2007-02-06 | 2013-11-22 | (주)소슬 | 막 형성 장치 |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| US8647485B2 (en) * | 2012-03-30 | 2014-02-11 | Applied Materials, Inc. | Process kit shield for plasma enhanced processing chamber |
-
2013
- 2013-12-06 KR KR1020130151693A patent/KR101518398B1/ko active IP Right Grant
- 2013-12-27 CN CN201380081398.XA patent/CN105793959B/zh active Active
- 2013-12-27 WO PCT/KR2013/012331 patent/WO2015083884A1/ko active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861837A (zh) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | 用于沉积多晶硅的cvd装置 |
| TW200837867A (en) * | 2007-02-06 | 2008-09-16 | Sosul Co Ltd | Apparatus for forming a layer |
| CN103035469A (zh) * | 2011-10-05 | 2013-04-10 | 应用材料公司 | 对称等离子体处理室 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101518398B1 (ko) | 2015-05-08 |
| CN105793959A (zh) | 2016-07-20 |
| WO2015083884A1 (ko) | 2015-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |