CN105789195A - 360-degree light emitting LED device and 360-degree light emitting LED light source - Google Patents
360-degree light emitting LED device and 360-degree light emitting LED light source Download PDFInfo
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The present invention in particular discloses a 360-degree light emitting LED device and a 360-degree light emitting LED light source. The LED device comprises an LED chip, the LED chip has a vertical structure, and the upper and lower ends of the LED chip are equipped with an N electrode and a P electrode respectively. The LED device also comprises a transparent upper substrate and a transparent lower substrate, and the LED chip is fixed between the transparent upper substrate and the transparent lower substrate. A first transparent conductive layer is arranged on the surface of the transparent upper substrate opposite to the LED chip, is electrically connected with the N electrode of the LED chip and leads out the N electrode to a first external electrode, a second transparent conductive layer is arranged on the surface of the transparent lower substrate opposite to the LED chip, is electrically connected with the P electrode of the LED chip and leads out the P electrode to a second external electrode, and a light conversion material layer wraps the transparent upper substrate, the transparent lower substrate and the LED chip. The LED device and the LED light source of the present invention can emit light 360 degrees, and are lower in production difficulty and higher in product quality.
Description
Technical field
The invention belongs to LED technology field, be specifically related to a kind of LED component 360 degree luminous and LED light source.
Background technology
LED has the advantages such as volume is little, driving voltage is low, luminous efficiency is high, life-span length, use in a lot of illuminations and decorative product, particularly in replacing traditional lighting source, it is achieved the light source that 360 full angles are luminous, the luminous intensity distribution of light fixture is designed, has great significance.Existing product 360 degree luminous, mainly has two kinds of implementations: one is LED filament, and another kind paster LED is fitted on abnormity PCB, by the combination of PCB and arrangement, it is achieved 360 degree luminous.
It is illustrated in figure 1 the structure of existing LED filament, it is all fix many packed LED chips 11 with insulating cement 16 on the substrate 14, LED chip P electrode 12 and LED chip N electrode 13 are respectively positioned on the upper surface of packed LED chip 11, realize electrical interconnection by gold thread 17 between packed LED chip and between chip and external electrode 15.Finally envelope substrate and chip with the mixture of fluorescent material and silica gel, form the filament of a column, luminous after energising.Existing LED filament also exists problems with: one be heat radiation not, cause that filament brightness easily decays because formal dress chip structure and only carry out heat conduction with insulating cement and can produce higher thermal resistance, the capacity of heat transmission is low, and bottom substrate limited area not easy heat radiation；Two is that the reliability of gold thread is low, adopts gold thread electrically to interconnect between packed LED chip, and filament is when cycled on power-off uses, it may appear that cold and heat succeed each other, and expanding with heat and contract with cold of fluorescent glue is easy to gold thread to break, thus causing filament operational failure.Therefore, dispel the heat bad cause brightness decay and gold thread break be at present puzzlement LED filament development two large problems.
Another kind of, paster LED is fitted in the way on PCB and is usually welded on the PCB of abnormity with the paster LED of support rack type encapsulation by paster technique, then after the PCB of abnormity being assembled, recycle silicon glue encapsulates, or the whole PCB including paster LED is connected with radiator heat conduction colloid, this process complex manufacturing, majority is manual operations, quality is difficult to control to, and LED is spot distribution on PCB, it is difficult to realize uniform 360 degree of luminescences.
Studying discovery except 360 degree of luminescences through applicant, China's publication number is that large power white light LED part structure disclosed in CN102723423A also discloses a kind of double-side structure.As in figure 2 it is shown, it directly makes transparent conductive film (2,7) on light conversion layer (1,6), then pass through conducting metal weld layer (5,10) and electrode is drawn.This structure achieves two sides and goes out light, effectively increases lighting area, but its side light-out effect bad, also cannot realize 360 degree luminous.Moreover, this class formation directly does circuit on light conversion layer, and the selection of light conversion layer, use and difficulty of processing are all relatively big, and are easy to affect the light conversion properties energy of light conversion layer, so that product quality is difficult to control to.
Summary of the invention
For the deficiencies in the prior art, it is an object of the invention to provide a kind of LED component and LED light source, can not only 360 degree luminescences, and production difficulty is lower, product quality is higher.
In order to realize foregoing invention purpose, the technical solution adopted in the present invention is as follows:
A kind of LED component 360 degree luminous, this LED component includes LED chip, and described LED chip is the LED chip of vertical stratification, and lower end is respectively arranged with N electrode and P electrode thereon；This LED component also includes transparent upper and transparent lower substrate, and LED chip is fixed on centre by described transparent upper and transparent lower substrate；Being laid with the first transparency conducting layer on the surface that described transparent upper is relative with LED chip, the N electrode of this first transparency conducting layer and LED chip is electrically connected and is led to the first external electrode；Being laid with the second transparency conducting layer on the surface that described transparent lower substrate is relative with LED chip, the P electrode of this second transparency conducting layer and LED chip is electrically connected and is led to the second external electrode.
Further, it is wrapped with a smooth transformational substance layer at described transparent upper, transparent lower substrate and LED chip.
Further, adopting identical attachment structure to be provided with plurality of LEDs chip between transparent upper and transparent lower substrate, the separate driving of each LED chip controls.
Further, being provided with plurality of LEDs chip between transparent upper and transparent lower substrate, each LED chip realizes connection in series-parallel each other by the first transparency conducting layer in transparent upper and the second transparency conducting layer in transparent lower substrate.
Further, the series system that described plurality of LEDs chip is concrete is: will need two LED chip N electrode and the P electrode placement in opposite direction of series connection, and be connected by the transparency conducting layer being laid in transparent upper or transparent lower substrate.
Further, the parallel way that described plurality of LEDs chip is concrete is: will need two LED chip N electrode placements identical with P electrode direction in parallel, and the transparency conducting layer passing through to be laid in transparent upper or transparent lower substrate is in parallel.
Further, between described transparent upper and transparent lower substrate, space except LED chip is filled with transparent insulation glue.
Further, described transparent upper and transparent lower substrate are clear glass, crystalline ceramics, quartz, sapphire or macromolecular material flexible base board.
Further, described first transparency conducting layer, the second transparency conducting layer are prepared by tin indium oxide, stannum oxide, zinc oxide, aluminium oxide, gallium oxide or anisotropic conductive film (ACF).
A kind of LED light source 360 degree luminous, including the LED component described in above any one, is connected with the power circuit or control circuit that drive its work outside described LED component.
LED component disclosed by the invention or light source select the LED chip of vertical stratification, including upper and lower two pieces of transparency carriers, face transparent conductive medium forms electrically conducting transparent circuit (including inner transparent conductive layer and external electrode) on the transparent substrate, transparency conducting layer constitutes sandwich structure for the N electrode and P electrode connecting LED chip, outside sandwich structure, it is coated with one layer is mixed with light transformational substance layer, light transformational substance layer is possible not only to printing opacity and conversion is photochromic, it is also possible to the rising angle of changing section light and then realize better 360 degree of light-out effect.
The present invention selects to carry LED chip by transparency carrier, and not only the making of transparency carrier and selection are easy, it is also possible to be easy to electrically conducting transparent circuit is produced on its surface.And the present invention individually wraps up light transformational substance material layer, dispensing method conventionally just can easily realize, and product quality is also higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of first kind prior art；
Fig. 2 is the structural representation of Equations of The Second Kind prior art；
Fig. 3 is the structural representation of the embodiment of the present invention 1；
Fig. 4 is the structural representation of the embodiment of the present invention 2；
Fig. 5 is the structural representation of the embodiment of the present invention 3；
Fig. 6 is the structural representation that the transparent upper and lower base plate of Fig. 5 separates；
Fig. 7 is the upward view after the wiring of the embodiment of the present invention 4 transparent upper；
Fig. 8 is the top view after the embodiment of the present invention 4 installs LED chip；
Fig. 9 is the combinative structure schematic diagram of the chip 104-1 part after the embodiment of the present invention 4 combination.
In figure:
1, first light conversion layer the 2, second transparent conductive film
3, the first transparent conductive film 4, P type end
5, first conducting metal weld layer the 6, second light conversion layer
7, the 4th transparent conductive film the 8, the 3rd transparent conductive film
9, N-type end the 10, second conducting metal weld layer
11, packed LED chip 12, P electrode
13, N electrode 14, substrate
15, external electrode 16, insulating cement
17, gold thread
101, LED chip 102, N electrode
103, P electrode
201, transparent upper the 202, first transparency conducting layer
203, first external electrode the 204, first articulamentum
205, the first conductive circuit layer the 206, the 3rd articulamentum
301, transparent lower substrate the 302, second transparency conducting layer
303, second external electrode the 304, second articulamentum
305, the second conductive circuit layer
Detailed description of the invention
In order to be fully understood from the purpose of the present invention, feature and effect, below with reference to accompanying drawing, the technique effect of the design of the present invention, concrete structure and generation is described further.
Embodiment 1
The present embodiment is a typical scenario of single LEDs chip package, its structure as shown in Figure 3:
LED chip 101 is the blue-light LED chip of vertical stratification, and its emission wavelength range is 440-470nm, and N electrode of chip 102 and chip P electrode 103 lay respectively at the two ends up and down of LED chip 101, and the main material of chip P electrode 103 is transparent conductive film.It should be noted that the present embodiment diagrammatically illustrates the situation of blue-light LED chip, present invention additionally comprises all kinds LED chip such as HONGGUANG, green glow, these are all the equivalent protection scopes of the present invention.
Wherein, the main material of transparent upper 201 is sapphire, being provided with patterned first transparency conducting layer 202 in one surface, the main material of the first transparency conducting layer 202 is transparent graphene conductive film, and the first transparency conducting layer 202 is provided with the first external electrode 203.
Wherein, the main material of transparent lower substrate 301 is sapphire, being provided with patterned second transparency conducting layer 302 in one surface, the main material of the second transparency conducting layer 302 is transparent graphene conductive film, and the second transparency conducting layer 302 is provided with the second external electrode 303.
Wherein, first transparency conducting layer 202 is provided with the first articulamentum 204, second transparency conducting layer 302 is provided with the second articulamentum 404, first articulamentum 204 is used for connecting the first transparency conducting layer 202 and N electrode of chip 102, second articulamentum 304 is used for connecting the second transparency conducting layer 302 and chip P electrode 103, and the main material of the first articulamentum 204 and the second articulamentum 304 is anisotropy conductiving glue.
It should be noted that, signal is directly perceived, Fig. 3 only illustrates LED chip and transparent upper and lower base plate part, is wrapped with a smooth transformational substance layer to realize Color Conversion at transparent upper 201, transparent lower substrate 301 and LED chip 101, and light transformational substance includes but not limited to fluorescent material and quantum dot.
In order to increase heat radiation, the air reducing chip circumference raises, in temperature, the stress that expansion brings, and increases light emission rate, in the middle of upper and lower transparency carrier, it does not have the place of chip, it is filled with transparent insulation glue, these glue are in the curry state of semi-solid preparation, for reducing the thermal stress risk between substrate.
Wherein, transparent upper and lower base plate (201,301) includes, but are not limited to sapphire, it is also possible to be the hard substrates such as clear glass, crystalline ceramics, quartz.Certainly, transparent upper and lower base plate (201,301) can also is that the flexible base board of the transparent polymer materials such as PET, PC.
Wherein, the transparency conducting layer (202,302) on transparent upper and lower base plate (201,301) can be prepared by oxide semiconductor material, includes, but are not limited to tin indium oxide, stannum oxide, zinc oxide, aluminium oxide, the composite parts of the oxide such as gallium oxide.Connecting (204,304) layer by layer can be metal connecting material (including, but are not limited to the materials such as au bump, copper bump, AuSn alloy, tin cream, elargol), can also be the electrically conducting transparent adhesive curing formation of organic material or the transparent conductive film of organic material (includes, but are not limited to ACF, the materials such as ACP, CleviousPedot).
Certainly, the LED component of the present embodiment include but not limited to bar shaped, square or circular.
The present embodiment is all realize face contact by transparent conductive medium due to the electrode of LED chip with the junction point of transparent upper and lower base plate (201,301), therefore can realize better conductive effect.The electrode of vertical chip, directly with the connection of substrate, is compared positive cartridge chip and is utilized the encapsulation of insulation crystal-bonding adhesive, and thermal resistance is less, and heat transfer is faster.The heat that chip produces when lighting simultaneously is conducted by upper and lower two substrates.Comparing the similar structures of positive cartridge chip filament, many substrates are as thermal conduction path, it is achieved better thermal conduction effect.
Embodiment 2
As shown in Figure 4, the present embodiment is another typical scenario of single LEDs chip package.As shown in Figure 4, the difference of the present embodiment and embodiment 1 essentially consists in have been improved its structure by the first external electrode 203 and the second external electrode 303:
First external electrode 203 having made into directly do strip first conductive circuit layer 205 in transparent upper 201 be connected with the first transparency conducting layer 202, the first conductive circuit layer 205 is as external electrode and acts the effect strengthening conductive and heat-conductive ability.
Equally, the second external electrode 303 having made into directly do strip second conductive circuit layer 305 in transparent lower substrate 301 and has been connected with the second transparency conducting layer 302, the second conductive circuit layer 305 is as external electrode and acts the effect strengthening conductive and heat-conductive ability.
In order to strengthen electrical connection performance, the present embodiment is being additionally provided with the material of the 3rd articulamentum 206 between N electrode 102 and the first articulamentum 204, and the material of the 3rd articulamentum 206 is elargol.
Embodiment 3
It is connected in series as it is shown in figure 5, present embodiment discloses to form plurality of LEDs chip, and uses fluorescent glue to carry out cladding encapsulation, thus forming the LED filament that can send white light.
Fig. 5 is the schematic diagram of the present embodiment LED encapsulation structure, and Fig. 6 is the structural representation that transparent upper and lower base plate separates, and its structure is similar to embodiment one, is different in that:
The quantity of LED chip 101 is 5, and wherein the N electrode of chip 102 of two is towards transparent upper 201, the N electrode of chip 102 of other three towards transparent lower substrate 301, different towards LED chip 101 in being intervally arranged；The main material of transparent upper 201 is crystalline ceramics, one surface is provided with patterned first transparency conducting layer 202, being additionally provided with the first conductive circuit layer 205 on same surface and be connected for strengthening conductive capability with the first transparency conducting layer 202, the first external electrode 203 is arranged in the first conductive circuit layer 205；The main material of transparent lower substrate 301 is crystalline ceramics, one surface is provided with patterned second transparency conducting layer 302, being additionally provided with the second conductive circuit layer 305 on same surface and be connected for strengthening conductive capability with the second transparency conducting layer 302, the second external electrode 303 is arranged in the second conductive circuit layer 305；N electrode of chip 102 is connected with the first transparency conducting layer 202 or the second transparency conducting layer 302 by the first articulamentum 204, and chip P electrode 103 is connected with the first transparency conducting layer 202 or the second transparency conducting layer 302 by the second articulamentum 304；Fluorescent glue 401 envelopes the whole encapsulating structure except the first external electrode 203 and the second external electrode 303.
Namely the present embodiment is to need two LED chip N electrode and the P electrode placement in opposite direction of series connection, and by being laid in the transparency conducting layer series connection in transparent upper or transparent lower substrate.
Same principle, it is possible to achieve plurality of LEDs chip is connected in parallel, is namely to need two LED chip N electrode placements identical with P electrode direction in parallel, and by being laid in the transparency conducting layer parallel connection in transparent upper or transparent lower substrate.One N electrode extraction electrode is such as set in transparent upper, then pass through laying transparency conducting layer and the N electrode of the LED chip of all parallel connections is all connected on N electrode extraction electrode, the P electrode of the LED chip of all parallel connections is all connected on the P electrode extraction electrode of transparent lower substrate by same mode, and then realizes the parallel connection between LED chip.
Certainly, according to side circuit needs, it is also possible to arranging existing series connection according to above-mentioned series connection and principle in parallel also has the LED component of parallel connection.
Embodiment 4
As shown in Fig. 7,8,9, the LED chip (104-1,104-2,104-3) of three different emission wavelengths is formed integral packaging by the present embodiment, and uses transparent silica gel to carry out cladding encapsulation, every LEDs chip can individually be driven control.
As shown in Figure 7, transparent upper 201 has patterned first transparency conducting layer 202 and the first conductive circuit layer 205, first conductive circuit layer 205 is connected with the first transparency conducting layer 202, first transparency conducting layer 202 is provided with first articulamentum (204-1,204-2,204-3) corresponding respectively with LED chip (104-1,104-2,104-3), three parts are each independent, and laid out in parallel is in transparent upper 201.
As shown in Figure 8, transparent lower substrate 301 has patterned second transparency conducting layer 302 and the second conductive circuit layer 305, second conductive circuit layer 305 is connected with the second transparency conducting layer 302, and three LEDs chips (104-1,104-2,104-3) are separately mounted on a second independent transparency conducting layer 302.In figure, 105-1,105-2 and 105-3 represent the N electrode of LED chip 104-1, LED chip 104-2, LED chip 104-3 respectively.
Connect corresponding to the first articulamentum (204-1,204-2,204-3) in Fig. 7 and Fig. 8 N electrode (105-1,105-2,105-3), and envelope the whole encapsulating structure except the External connecting part of the first conductive circuit layer 205 and the External connecting part of the second conductive circuit layer 305 just as shown in Figure 9 by transparent silica gel 402.
In the present embodiment, three kinds of corresponding three chips of glow color, it is intended merely to convenient explanation, and when practical application, it is possible to adopting the chip of one or more glow colors, the core number of each glow color can be one or many.
The preferred embodiment of the present invention described in detail above, it will be appreciated that those of ordinary skill in the art just can make many modifications and variations according to the design of the present invention without creative work.Therefore, all technical staff in the art according to present inventive concept on prior art basis by logical analysis, reasoning or according to the limited available technical scheme of experiment, all should among the determined protection domain of present claims book.
Claims (10)
1. a LED component 360 degree luminous, this LED component includes at least one LEDs chip, it is characterised in that:
Described LED chip is the LED chip of vertical stratification, and lower end is respectively arranged with N electrode and P electrode thereon；
This LED component also includes transparent upper and transparent lower substrate, and LED chip is fixed on centre by described transparent upper and transparent lower substrate；
Being laid with the first transparency conducting layer on the surface that described transparent upper is relative with LED chip, the N electrode of this first transparency conducting layer and LED chip is electrically connected and is led to the first external electrode；
Being laid with the second transparency conducting layer on the surface that described transparent lower substrate is relative with LED chip, the P electrode of this second transparency conducting layer and LED chip is electrically connected and is led to the second external electrode.
2. LED component 360 degree luminous according to claim 1, it is characterised in that:
It is wrapped with a smooth transformational substance layer at described transparent upper, transparent lower substrate and LED chip.
3. LED component 360 degree luminous according to claim 1, it is characterised in that:
Adopting identical attachment structure to be provided with plurality of LEDs chip between transparent upper and transparent lower substrate, the separate driving of each LED chip controls.
4. LED component 360 degree luminous according to claim 1, it is characterised in that:
Being provided with plurality of LEDs chip between transparent upper and transparent lower substrate, each LED chip realizes connection in series-parallel each other by the first transparency conducting layer in transparent upper and the second transparency conducting layer in transparent lower substrate.
5. LED component 360 degree luminous according to claim 4, it is characterised in that:
The concrete series system of described plurality of LEDs chip is: will need two LED chip N electrode and the P electrode placement in opposite direction of series connection, and by being laid in the transparency conducting layer series connection in transparent upper or transparent lower substrate.
6. LED component 360 degree luminous according to claim 4, it is characterised in that:
The concrete parallel way of described plurality of LEDs chip is: will need two LED chip N electrode placements identical with P electrode direction in parallel, and in parallel by the transparency conducting layer that is laid in transparent upper or transparent lower substrate.
7. the LED component 360 degree luminous according to any one of claim 1-6, it is characterised in that:
Between described transparent upper and transparent lower substrate, the space except LED chip is filled with transparent insulation glue.
8. the LED component 360 degree luminous according to any one of claim 1-6, it is characterised in that:
Described transparent upper and transparent lower substrate are clear glass, crystalline ceramics, quartz, sapphire or macromolecular material flexible base board.
9. the LED component 360 degree luminous according to any one of claim 1-6, it is characterised in that:
Described first transparency conducting layer, the second transparency conducting layer are prepared by tin indium oxide, stannum oxide, zinc oxide, aluminium oxide or gallium oxide.
10. LED light source one kind 360 degree luminous, it is characterised in that: include the LED component described in any one of claim 1-9, outside described LED component, be connected with the power circuit or control circuit that drive its work.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610265543.5A CN105789195B (en) | 2016-04-25 | 2016-04-25 | A kind of 360 degree luminous LED components and LED light source |
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| CN201610265543.5A CN105789195B (en) | 2016-04-25 | 2016-04-25 | A kind of 360 degree luminous LED components and LED light source |
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| CN105789195A true CN105789195A (en) | 2016-07-20 |
| CN105789195B CN105789195B (en) | 2018-06-05 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384733A (en) * | 2016-10-31 | 2017-02-08 | 广东晶科电子股份有限公司 | 360-degree light-transmitting LED filament and preparation method thereof |
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| US11525547B2 (en) | 2014-09-28 | 2022-12-13 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
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| US11629825B2 (en) | 2014-09-28 | 2023-04-18 | Zhejiang Super Lighting Electric Appliance Co., Lt | LED light bulb with curved filament |
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| US11690148B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED filament and LED light bulb |
| US11892127B2 (en) | 2014-09-28 | 2024-02-06 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED bulb lamp |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723423A (en) * | 2012-05-24 | 2012-10-10 | 上海泉新光电技术有限公司 | Gold-wire-free double-faced light-emergence packaging method and packaging structure for high-power white-light light emitting diode (LED) device |
| CN202812829U (en) * | 2012-04-19 | 2013-03-20 | 浙江锐迪生光电有限公司 | LED light-emitting element with 4-Pi light-emitting angle |
| CN202940270U (en) * | 2012-11-29 | 2013-05-15 | 昆山开威电子有限公司 | LED chip with both sides emitting light and LED device |
| US20140209930A1 (en) * | 2013-01-25 | 2014-07-31 | Tsmc Solid State Lighting Ltd. | Multi-Vertical LED Packaging Structure |
| CN104157640A (en) * | 2014-08-29 | 2014-11-19 | 王维昀 | Omni-directional LED light source |
| CN205609523U (en) * | 2016-04-25 | 2016-09-28 | 李正豪 | 360 luminous LED device and LED light source of degree |
-
2016
- 2016-04-25 CN CN201610265543.5A patent/CN105789195B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202812829U (en) * | 2012-04-19 | 2013-03-20 | 浙江锐迪生光电有限公司 | LED light-emitting element with 4-Pi light-emitting angle |
| CN102723423A (en) * | 2012-05-24 | 2012-10-10 | 上海泉新光电技术有限公司 | Gold-wire-free double-faced light-emergence packaging method and packaging structure for high-power white-light light emitting diode (LED) device |
| CN202940270U (en) * | 2012-11-29 | 2013-05-15 | 昆山开威电子有限公司 | LED chip with both sides emitting light and LED device |
| US20140209930A1 (en) * | 2013-01-25 | 2014-07-31 | Tsmc Solid State Lighting Ltd. | Multi-Vertical LED Packaging Structure |
| CN104157640A (en) * | 2014-08-29 | 2014-11-19 | 王维昀 | Omni-directional LED light source |
| CN205609523U (en) * | 2016-04-25 | 2016-09-28 | 李正豪 | 360 luminous LED device and LED light source of degree |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11525547B2 (en) | 2014-09-28 | 2022-12-13 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
| US11543083B2 (en) | 2014-09-28 | 2023-01-03 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
| US11629825B2 (en) | 2014-09-28 | 2023-04-18 | Zhejiang Super Lighting Electric Appliance Co., Lt | LED light bulb with curved filament |
| US11686436B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and light bulb using LED filament |
| US11690148B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED filament and LED light bulb |
| US11892127B2 (en) | 2014-09-28 | 2024-02-06 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED bulb lamp |
| US11421827B2 (en) | 2015-06-19 | 2022-08-23 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
| CN106384733A (en) * | 2016-10-31 | 2017-02-08 | 广东晶科电子股份有限公司 | 360-degree light-transmitting LED filament and preparation method thereof |
| WO2022042432A1 (en) * | 2020-08-24 | 2022-03-03 | 嘉兴山蒲照明电器有限公司 | Light emitting diode filament, and light bulb using light emitting diode filament |
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