CN105789128A - Blade trimming method for ultrathin wafer saw blade - Google Patents
Blade trimming method for ultrathin wafer saw blade Download PDFInfo
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- CN105789128A CN105789128A CN201610165551.2A CN201610165551A CN105789128A CN 105789128 A CN105789128 A CN 105789128A CN 201610165551 A CN201610165551 A CN 201610165551A CN 105789128 A CN105789128 A CN 105789128A
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- Prior art keywords
- cutter
- saw blade
- blade
- wafer
- trimming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention discloses a blade trimming method for an ultrathin wafer saw blade. The method comprises the specific steps of affixing two layers of semiconductor protection film on the front surface of a wafer with the thickness of 100-250 microns and used for trimming the blade; scribing along the cleavage plane of the wafer when trimming the saw blade; and trimming the blade with a stepped accelerated feeding speed, wherein during the process from a feeding speed of 5 mm/s to a feeing speed of 40mm/s, the feeding speed is improved by 5mm/s every 30-50 times of trimming until that the feeding speed reaches 40 mm/s and maintains until the blade trimming is completed. By adjusting the blade trimming technology for the saw blade, the problems about edge breakage and core fracture of products are reduced, and the trimming time of the saw blade is greatly reduced, the production efficiency and quality of the saw blade are both greatly improved, and meanwhile the production costs and risks of the enterprise are reduced and the customer satisfaction is increased.
Description
Technical field
The invention belongs to the processing technique field of semiconductor monocrystal silicon chip, be specifically related to a kind of ultra-thin wafers sheet saw blade repaiies cutter method.
Background technology
Miniaturization along with integrated circuit; packing forms is more and more less; wafer thickness is more and more thinner, but brings difficulty to the separation of chip simultaneously, uses either import or domestic saw blade; use and traditional repair cutter technique or producer provides repaiies cutter technique; often cause the phenomenon collapsing limit He splitting core during scribing, add up defective ratio and reach more than 10% so that product rejection is serious; upper core inefficiency, and there is risk hidden danger product being issued client and claimed damages.
Summary of the invention
Present invention solves the technical problem that there is provided a kind of thin wafer saw blade repaiies cutter method, saw blade use new repair cutter technique after carry out the scribing of formal product again and separate, limit and the problem splitting core is collapsed after successfully solving the ultra-thin wafers sheet scribing that thickness is 90-120 μm, product disqualification rate is reduced to less than 0.5%, achieves preferable economic benefit.
The present invention solves that above-mentioned technical problem adopts the following technical scheme that; a kind of ultra-thin wafers sheet saw blade repair cutter method; it is characterized in that concrete steps: the front repairing cutter wafer that thickness is 100-250 μm is sticked the diaphragm of two-layer semiconductor; when saw blade repaiies cutter, the cleavage surface along wafer carries out scribing; ladder raising speed formula feed velocity is used to carry out repairing cutter; it is specially feed velocity during 5mm/s rises to 40mm/s; often repair 30-50 cutter and promote feed velocity 5mm/s, until feed velocity reaches 40mm/s and keeps to completing repairing cutter.
Further preferably, described diaphragm is blue film, UV film or heat shrinkage film.
Further preferably, described repair cutter wafer be produce during or product testing in the defective wafer that produces.
The method have the advantages that and repair cutter technique by adjustment saw blade, achieving reduction product collapse limit and split the problem of core, and be substantially reduced the cutter time of repairing of saw blade, production efficiency and quality are all increased dramatically, reduce enterprise's production cost and risk simultaneously, increase CSAT.
Detailed description of the invention
Being described in further details the foregoing of the present invention by the following examples, but this should not being interpreted as, the scope of the above-mentioned theme of the present invention is only limitted to below example, all technology realized based on foregoing of the present invention belong to the scope of the present invention.
Embodiment
Step 1: select to repair the wafer of cutter
Select 3 cun, 4 cun, 5 cun and 6 cun of monocrystalline silicon pieces; can be production process or process of the test scrap wafer; consider the consuming cost to saw blade and repair cutter quality; require that the wafer thickness repairing cutter is 100-250 μm; diaphragm when wafer front is retained thinning, can be blue film, UV film or heat shrinkage film.
Step 2: adhere to second layer diaphragm
Wafer band diaphragm one side is faced up on the wafer position being placed into special die Bonder; then special for scribing blade ring is placed into die Bonder and puts on ring position; the blue film, UV film or the heat shrinkage film that now scribing are used are smooth above wafer to be pasted blade ring and wafer; remove the corner film on blade ring afterwards; just there has been two-layer diaphragm in wafer front now, its back side is placed into cutter to be repaired upward on scribing machine and uses.
Step 3: location scribing crystal face
By hyperphoric for new saw blade to after scribing machine, find wafer locating surface or cleavage surface, carry out repairing cutter 240 cutter-400 cutter according to certain step pitch, step pitch can be according to die size size from Row sum-equal matrix, but it is because in crystal the different different reason of crystal face atomic density, in cleavage surface, during scribing, wafer can be along neat the splitting without generation white residue and damage tube core of cleavage surface, so must assure that saw blade carries out scribing along wafer cleavage surface when repairing cutter, damage this cutter hub fixed with the bulky grain white residue produced during other crystal faces of anti-scratch.
Step 4: cutter is repaiied in scribing
The feed velocity using ladder raising speed formula carries out repairing cutter, rises to 40mm/s from 5mm/s, often repaiies 30 cutter-50 cuttves and promotes feed velocitys 5mm/s, until feed velocity reaches 40mm/s and keeps to completing repairing cutter.
Above-described embodiment can obtain comparatively ideal cutter hub after saw blade repaiies cutter so that produce when drawing formal product wafer collapses limit and split core phenomenon and be greatly reduced.
Embodiment above describes the general principle of the present invention, principal character and advantage; skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; the principle that the present invention is simply described described in above-described embodiment and specification; under the scope without departing from the principle of the invention; the present invention also has various changes and modifications, and these changes and improvements each fall within the scope of protection of the invention.
Claims (3)
1. a ultra-thin wafers sheet saw blade repair cutter method; it is characterized in that concretely comprising the following steps: the front repairing cutter wafer that thickness is 100-250 μm is sticked the diaphragm of two-layer semiconductor; when saw blade repaiies cutter, the cleavage surface along wafer carries out scribing; ladder raising speed formula feed velocity is used to carry out repairing cutter; it is specially feed velocity during 5mm/s rises to 40mm/s; often repair 30-50 cutter and promote feed velocity 5mm/s, until feed velocity reaches 40mm/s and keeps to completing repairing cutter.
Ultra-thin wafers sheet saw blade the most according to claim 1 repair cutter method, it is characterised in that: described diaphragm is blue film, UV film or heat shrinkage film.
Ultra-thin wafers sheet saw blade the most according to claim 1 repair cutter method, it is characterised in that: described repair cutter wafer be produce during or process of the test in the defective wafer that produces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165551.2A CN105789128B (en) | 2016-03-22 | 2016-03-22 | A kind of ultra-thin wafers piece saw blade repaiies knife method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165551.2A CN105789128B (en) | 2016-03-22 | 2016-03-22 | A kind of ultra-thin wafers piece saw blade repaiies knife method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105789128A true CN105789128A (en) | 2016-07-20 |
| CN105789128B CN105789128B (en) | 2018-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610165551.2A Active CN105789128B (en) | 2016-03-22 | 2016-03-22 | A kind of ultra-thin wafers piece saw blade repaiies knife method |
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| CN (1) | CN105789128B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108581865A (en) * | 2018-03-30 | 2018-09-28 | 郑州磨料磨具磨削研究所有限公司 | A kind of blade exposure method of hub type plating superthin diamond cutting blade |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007203429A (en) * | 2006-02-03 | 2007-08-16 | Disco Abrasive Syst Ltd | Dressing/truing board and dressing truing method |
| CN102347275A (en) * | 2010-08-02 | 2012-02-08 | 北京中电科电子装备有限公司 | Method for sharpening blade of scribing machine |
| CN104139462A (en) * | 2013-05-09 | 2014-11-12 | 株式会社迪思科 | Chip cutting method |
-
2016
- 2016-03-22 CN CN201610165551.2A patent/CN105789128B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007203429A (en) * | 2006-02-03 | 2007-08-16 | Disco Abrasive Syst Ltd | Dressing/truing board and dressing truing method |
| CN102347275A (en) * | 2010-08-02 | 2012-02-08 | 北京中电科电子装备有限公司 | Method for sharpening blade of scribing machine |
| CN104139462A (en) * | 2013-05-09 | 2014-11-12 | 株式会社迪思科 | Chip cutting method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108581865A (en) * | 2018-03-30 | 2018-09-28 | 郑州磨料磨具磨削研究所有限公司 | A kind of blade exposure method of hub type plating superthin diamond cutting blade |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105789128B (en) | 2018-04-13 |
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Denomination of invention: Blade trimming method for ultrathin wafer saw blade Effective date of registration: 20190807 Granted publication date: 20180413 Pledgee: Xinxiang Xindong Development and Construction Investment Co., Ltd. Pledgor: Henan Xin Rui Electronic Science and Technology Co., Ltd. Registration number: Y2019990000038 |
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