CN102347275A - Method for sharpening blade of scribing machine - Google Patents
Method for sharpening blade of scribing machine Download PDFInfo
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- CN102347275A CN102347275A CN2010102434187A CN201010243418A CN102347275A CN 102347275 A CN102347275 A CN 102347275A CN 2010102434187 A CN2010102434187 A CN 2010102434187A CN 201010243418 A CN201010243418 A CN 201010243418A CN 102347275 A CN102347275 A CN 102347275A
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- scribing machine
- silicon carbide
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Abstract
The invention provides a method for sharpening a blade of a scribing machine and relates to the field of application of integrated circuit encapsulation equipment. By the method, the technical problem of low cutting quality of a wafer in the prior art is solved. The method comprises the following steps of: installing the blade onto a main shaft of the scribing machine; and absorbing a sharpening plate onto a sheet absorption table of the scribing machine, wherein the main shaft drives the blade to rotate, and the sharpening plate moves at the same time according to a first sharpening depth along a scribing direction, so that the blade is sharpened on the sharpening plate for the first time; and the first sharpening depth is the depth of a scribing trace formed by the blade on the sharpening plate. By the method, the cutting quality of the wafer can be improved.
Description
Technical field
The present invention relates to integrated circuit sealed in unit application, be meant a kind of method for trimming of scribing machine blade especially.
Background technology
Scribing machine is on the integrated circuit packaging line, and wafer (wafer) is cut into the independently equipment of circuit unit (die), and its cutting drives the outer circular knife high speed rotating of diamond through high-speed air static pressure electricity main shaft and realizes.The outer circular knife of not flanged diamond is that endoporus is that φ 40mm, external diameter are that φ 50～70mm, thickness are the skive sheet of 0.02～0.05mm.Because the cutting edge section of new blade is a rectangle, and diamond particles is embedded in the bond, in addition, blade is not to be to be the circle in the center of circle with the spindle axis with the cutting edge of main shaft high speed rotating, and when making the new cutter cutting crystal wafer of direct use, wafer bursts apart seriously.
Summary of the invention
The technical problem that the present invention will solve provides a kind of method for trimming that improves the scribing machine blade of wafer cutting quality.
For solving the problems of the technologies described above, embodiments of the invention provide technical scheme following:
A kind of method for trimming of scribing machine blade comprises:
Blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of said scribing machine;
Said main shaft drives said blade rotation; Said finishing board moves along the cutting-up direction with the first finishing degree of depth simultaneously; Make said blade on said finishing board, carry out the finishing first time, the said first finishing degree of depth is the degree of depth of the cutting-up vestige of said blade on said finishing board.
The method for trimming of described scribing machine blade also comprises:
Said main shaft drives said blade rotation; Said finishing board moves along the cutting-up direction with the second finishing degree of depth simultaneously; Make said blade on said finishing board, carry out the finishing second time; The said second finishing degree of depth is greater than the said first finishing degree of depth; And the depth of cut when the said second finishing degree of depth is cut into slices greater than scribing machine; The said second finishing degree of depth is the degree of depth of the cutting-up vestige of said blade on said finishing board, the degree of depth of the cutting-up vestige the when depth of cut the during section of said scribing machine is said blade cuts wafer on wafer.
The method for trimming of described scribing machine blade also comprises:
Remove said finishing board from said suction sheet platform, and wafer is adsorbed on the suction sheet platform of said scribing machine;
Depth of cut with said wafer during with the section of said scribing machine moves along the cutting-up direction, and said blade is repaired on said wafer for the third time, and the width of the slot that on said wafer, forms up to said blade reaches predetermined value.
Said finishing board is increasing gradually with the first finishing degree of depth along the translational speed that the cutting-up direction moves, at every grade of predetermined cutter number of speed finishing.
Said finishing board is increasing gradually with the second finishing degree of depth along the translational speed that the cutting-up direction moves, at every grade of predetermined cutter number of speed finishing.
The translational speed that depth of cut when said wafer is cut into slices with said scribing machine moves along the cutting-up direction is to strengthen gradually.
The scope of the said first finishing degree of depth is 0.1mm to 0.15mm.
The big 0.15mm to 0.35mm of depth of cut when the said scribing machine of the said second finishing depth ratio is cut into slices.
Said blade is the skive sheet, and said finishing board is the diamond dust finishing board, and the particles of silicon carbide size of said skive sheet is corresponding with the particles of silicon carbide size of said diamond dust finishing board.
The particles of silicon carbide size of said skive sheet and big or small corresponding being specially of the particles of silicon carbide of said diamond dust finishing board:
Particles of silicon carbide is that 1700 purpose skive sheets coupling particles of silicon carbide is 600 order to 800 purpose diamond dust finishing boards;
Particles of silicon carbide is that 2000 purpose skive sheets coupling particles of silicon carbide is 800 order to 1000 purpose diamond dust finishing boards;
Particles of silicon carbide is that 3000 purpose skive sheets coupling particles of silicon carbide is 1000 order to 1200 purpose diamond dust finishing boards;
Particles of silicon carbide is that 4000 purpose skive sheets coupling particles of silicon carbide is 1200 order to 1500 purpose diamond dust finishing boards.
Embodiments of the invention have following beneficial effect:
In the such scheme, blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of said scribing machine; Said main shaft drives said blade rotation, and said finishing board along the feeding of cutting-up direction, makes said blade on said finishing board, carry out the cutting-up first time with the first finishing degree of depth simultaneously.When production process is used the scribing machine cutting crystal wafer, in advance the blade of scribing machine is polished, make the blade of scribing machine before use at first from sharp, reduced wafer bursting apart when cutting, improved the cutting quality of wafer.
Description of drawings
Fig. 1 is the schematic flow sheet of the method for trimming of scribing machine blade of the present invention;
Fig. 2 is in the application scenarios of method for trimming of scribing machine blade of the present invention, and main shaft, blade, finishing board and the installation of inhaling between the sheet platform concern sketch map;
Fig. 3 is the schematic perspective view when skive sheet 1 switches on finishing board 2 among Fig. 2;
Fig. 4 (a) is in the application scenarios of method for trimming of scribing machine blade of the present invention, the cutaway view of the cutlery shape after the cutter process of repairing of step 2;
Fig. 4 (b) is in the application scenarios of method for trimming of scribing machine blade of the present invention, the cutaway view of the cutlery shape after the cutter process of repairing of step 3;
Fig. 5 (a) and Fig. 5 (b) pass through the contrast sketch map of finishing from sharp front and back for blade;
Fig. 6 (a), Fig. 6 (b) and Fig. 6 (c) are the contrast sketch map of blade through the self-cavetto front and back of finishing.
Embodiment
For technical problem, technical scheme and advantage that embodiments of the invention will be solved is clearer, will combine accompanying drawing and specific embodiment to be described in detail below.
Fig. 1 is the method for trimming of a kind of scribing machine blade of the present invention, as shown in Figure 2, is the local scheme of installation of scribing machine.Said method comprises:
In the such scheme, blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of said scribing machine; Said main shaft drives said blade rotation, and said finishing board along the feeding of cutting-up direction, makes said blade on said finishing board, carry out the cutting-up first time with the first finishing degree of depth simultaneously.When production process is used the scribing machine cutting crystal wafer, in advance the blade of scribing machine is polished, make the blade of scribing machine before use at first from sharp, reduced wafer bursting apart when cutting, improved the cutting quality of wafer.
In order to make blade that better cutting quality arranged, the method for trimming of described scribing machine blade also comprises:
In order to make blade that better cutting quality arranged, the method for trimming of described scribing machine blade also comprises:
Wherein, said finishing board with the first finishing degree of depth along the feed speed of cutting-up direction feeding for strengthening gradually, be scheduled to the cutter number every grade of speed finishing;
Said finishing board with the second finishing degree of depth along the feed speed of cutting-up direction feeding for strengthening gradually, be scheduled to the cutter number every grade of speed finishing;
Depth of cut when said wafer is cut into slices with said scribing machine is to strengthen gradually along the feed speed of cutting-up direction feeding.
The scope of the said first finishing degree of depth is 0.1mm to 0.15mm.
The big 0.15mm to 0.35mm of depth of cut when the said scribing machine of the said second finishing depth ratio is cut into slices.
Said blade is the skive sheet, and said finishing board is the diamond dust finishing board, and the particles of silicon carbide size of said skive sheet is corresponding with the particles of silicon carbide size of said diamond dust finishing board.
The particles of silicon carbide size of said skive sheet and big or small corresponding being specially of the particles of silicon carbide of said diamond dust finishing board:
Particles of silicon carbide is that 1700 purpose skive sheets coupling particles of silicon carbide is 600 order to 800 purpose diamond dust finishing boards;
Particles of silicon carbide is that 2000 purpose skive sheets coupling particles of silicon carbide is 800 order to 1000 purpose diamond dust finishing boards;
Particles of silicon carbide is that 3000 purpose skive sheets coupling particles of silicon carbide is 1000 order to 1200 purpose diamond dust finishing boards;
Particles of silicon carbide is that 4000 purpose skive sheets coupling particles of silicon carbide is 1200 order to 1500 purpose diamond dust finishing boards.
The application scenarios of the method for trimming of the outer circular knife of the not flanged diamond of scribing machine of the present invention is below described; Can improve the cutting quality of wafer; Make blade in dressing process self-cavetto, from sharp and self-moulding, improve the useful life of blade, reduce production costs.Said method comprises:
Step 3 is repaiied cutter for the second time by the second finishing degree of depth, and the second finishing degree of depth is greater than normal depth of cut 0.2-0.3mm, for example: the silicon chip depth of cut requires 0.2mm, and the finishing degree of depth then is 0.4-0.5mm.Finishing board is along the feeding of cutting-up direction, and speed also is to increase to certain speed (for example 20-30mm/s) gradually by (for example 5mm/s) at a slow speed, and every grade of speed finishing knife is repaired 20 cuttves altogether, and cutlery is trimmed to the shape shown in Fig. 4 (b).Fig. 4 (b) is the cutlery shape after the cutter process of repairing of step 3, and after the finishing, cutlery is the V-type shape for the second time, and H3 is the second finishing degree of depth.
Skive sheet 1 can be selected the superthin diamond grinding wheel, and its diamond dust hardness is 7000kg/mm
2, temperature stability is 600-700 ℃.Particles of silicon carbide is selected 1700 orders (4-8 μ m), 2000 orders (4-6 μ m), 3000 orders (2-6 μ m), four kinds of models of 4000 orders (2-4 μ m) for use.Finishing board can be selected the diamond dust finishing board of 75mm * 75mm * 1mm.Blade and finishing board corresponding matched relation are: particles of silicon carbide is the diamond dust finishing board that 1700 purpose blades mate 600 orders-800 order particle; 2000 purpose blades mate the diamond dust finishing board of 800 orders-1000 order particle; 3000 purpose blades mate the diamond dust finishing board of 1000 orders-1200 order particle; 4000 purpose blades mate the diamond dust finishing board of 1200 orders-1500 order particle.
Fig. 5 (a) and Fig. 5 (b) pass through the contrast sketch map of finishing from sharp front and back for blade.The front view of supposing the skive sheet is an annulus, and Fig. 5 (a) and Fig. 5 (b) are respectively the local enlarged diagram of skive sheet part annulus.Fig. 5 (a) is the preceding situation of cutlery finishing, and particles of silicon carbide 40 is embedded in the cutlery metal material, and perhaps diamond particles is embedded in the bond, has passivation phenomenon.Fig. 5 (b) is the sketch map of cutlery after through finishing, and diamond dust is exposed outside, formed cutlery from sharp.
Fig. 6 (a), Fig. 6 (b) and Fig. 6 (c) are the contrast sketch map of blade through the self-cavetto front and back of finishing.Fig. 6 (a) just has been installed to the situation before the finishing on the main shaft for cutlery.Numerical value a, b, c represent the main shaft outer rim of scribing machine respectively in the distance of three differences apart from the blade outer rim, and this moment, a, b, c were all unequal, cutlery and spindle eccentricity.Fig. 6 (b) is the movement locus of finishing forward spindle cutlery in rotary course, the consequence that this can cause the cutting-up degree of depth to differ.Fig. 6 (c) for cutlery through after repairing cutter, the sketch map concentric with main shaft, cutlery have been accomplished the self-cavetto of repairing in the cutter process, through finishing, the main shaft outer rim of scribing machine becomes identical at three differences apart from the distance of blade outer rim, is numerical value a.
In the prior art; Because the cutting edge section of new blade is that rectangle, diamond particles are embedded in the bond; Blade is not to be to be the reason that the circle in the center of circle waits three aspects with the spindle axis with the cutting edge of main shaft high speed rotating, consequence such as make that the new cutter cutting crystal wafer of direct use produces that the tool marks width is big, wafer bursts apart seriously, blade useful life is low.After using the method for trimming blade of scribing machine blade of the present invention to repair, again wafer is cut into slices, improved the quality of wafer cutting, reduced production cost.
In each method embodiment of the present invention; The sequence number of said each step can not be used to limit the sequencing of each step; For those of ordinary skills, under the prerequisite of not paying creative work, the priority of each step is changed also within protection scope of the present invention.
The above is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle according to the invention; Can also make some improvement and retouching, these improvement and retouching also should be considered as protection scope of the present invention.
Claims (10)
1. the method for trimming of a scribing machine blade is characterized in that, comprising:
Blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of said scribing machine;
Said main shaft drives said blade rotation; Said finishing board moves along the cutting-up direction with the first finishing degree of depth simultaneously; Make said blade on said finishing board, carry out the finishing first time, the said first finishing degree of depth is the degree of depth of the cutting-up vestige of said blade on said finishing board.
2. the method for trimming of scribing machine blade according to claim 1 is characterized in that, also comprises:
Said main shaft drives said blade rotation; Said finishing board moves along the cutting-up direction with the second finishing degree of depth simultaneously; Make said blade on said finishing board, carry out the finishing second time; The said second finishing degree of depth is greater than the said first finishing degree of depth; And the depth of cut when the said second finishing degree of depth is cut into slices greater than scribing machine; The said second finishing degree of depth is the degree of depth of the cutting-up vestige of said blade on said finishing board, the degree of depth of the cutting-up vestige the when depth of cut the during section of said scribing machine is said blade cuts wafer on wafer.
3. the method for trimming of scribing machine blade according to claim 1 and 2 is characterized in that, also comprises:
Remove said finishing board from said suction sheet platform, and wafer is adsorbed on the suction sheet platform of said scribing machine;
Depth of cut with said wafer during with the section of said scribing machine moves along the cutting-up direction, and said blade is repaired on said wafer for the third time, and the width of the slot that on said wafer, forms up to said blade reaches predetermined value.
4. the method for trimming of scribing machine blade according to claim 1 is characterized in that,
Said finishing board is increasing gradually with the first finishing degree of depth along the translational speed that the cutting-up direction moves, at every grade of predetermined cutter number of speed finishing.
5. the method for trimming of scribing machine blade according to claim 2 is characterized in that,
Said finishing board is increasing gradually with the second finishing degree of depth along the translational speed that the cutting-up direction moves, at every grade of predetermined cutter number of speed finishing.
6. the method for trimming of scribing machine blade according to claim 3 is characterized in that,
The translational speed that depth of cut when said wafer is cut into slices with said scribing machine moves along the cutting-up direction is to strengthen gradually.
7. the method for trimming of scribing machine blade according to claim 1 is characterized in that,
The scope of the said first finishing degree of depth is 0.1mm to 0.15mm.
8. the method for trimming of scribing machine blade according to claim 2 is characterized in that,
The big 0.15mm to 0.35mm of depth of cut when the said scribing machine of the said second finishing depth ratio is cut into slices.
9. the method for trimming of scribing machine blade according to claim 1 is characterized in that,
Said blade is the skive sheet, and said finishing board is the diamond dust finishing board, and the particles of silicon carbide size of said skive sheet is corresponding with the particles of silicon carbide size of said diamond dust finishing board.
10. the method for trimming of scribing machine blade according to claim 9 is characterized in that, the particles of silicon carbide size of said skive sheet and big or small corresponding being specially of the particles of silicon carbide of said diamond dust finishing board:
Particles of silicon carbide is that 1700 purpose skive sheets coupling particles of silicon carbide is 600 order to 800 purpose diamond dust finishing boards;
Particles of silicon carbide is that 2000 purpose skive sheets coupling particles of silicon carbide is 800 order to 1000 purpose diamond dust finishing boards;
Particles of silicon carbide is that 3000 purpose skive sheets coupling particles of silicon carbide is 1000 order to 1200 purpose diamond dust finishing boards;
Particles of silicon carbide is that 4000 purpose skive sheets coupling particles of silicon carbide is 1200 order to 1500 purpose diamond dust finishing boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243418.7A CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010243418.7A CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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| CN102347275A true CN102347275A (en) | 2012-02-08 |
| CN102347275B CN102347275B (en) | 2014-02-19 |
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| CN201010243418.7A Expired - Fee Related CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789128A (en) * | 2016-03-22 | 2016-07-20 | 河南芯睿电子科技有限公司 | Blade trimming method for ultrathin wafer saw blade |
| US9498898B2 (en) | 2014-06-24 | 2016-11-22 | Freescale Semiconductor,Inc. | Cleaning mechanism for semiconductor singulation saws |
| CN106346365A (en) * | 2015-07-14 | 2017-01-25 | 株式会社迪思科 | Trimming tool and front end shape forming method of cutting tool adopting trimming tool |
| CN109249285A (en) * | 2017-07-12 | 2019-01-22 | 株式会社迪思科 | Finishing board and dressing method |
| CN110098115A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | The cutting method of wafer |
| CN111633479A (en) * | 2020-06-15 | 2020-09-08 | 郑州磨料磨具磨削研究所有限公司 | Method for repairing scribing cutter for gallium arsenide wafer |
| CN113172780A (en) * | 2021-04-07 | 2021-07-27 | 郑州磨料磨具磨削研究所有限公司 | Scribing structure for cutting silicon carbide and online trimming method thereof |
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| US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
| JP2007203429A (en) * | 2006-02-03 | 2007-08-16 | Disco Abrasive Syst Ltd | Dressing/truing board and dressing truing method |
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2010
- 2010-08-02 CN CN201010243418.7A patent/CN102347275B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
| JP2007203429A (en) * | 2006-02-03 | 2007-08-16 | Disco Abrasive Syst Ltd | Dressing/truing board and dressing truing method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9498898B2 (en) | 2014-06-24 | 2016-11-22 | Freescale Semiconductor,Inc. | Cleaning mechanism for semiconductor singulation saws |
| CN106346365A (en) * | 2015-07-14 | 2017-01-25 | 株式会社迪思科 | Trimming tool and front end shape forming method of cutting tool adopting trimming tool |
| CN105789128A (en) * | 2016-03-22 | 2016-07-20 | 河南芯睿电子科技有限公司 | Blade trimming method for ultrathin wafer saw blade |
| CN105789128B (en) * | 2016-03-22 | 2018-04-13 | 河南芯睿电子科技有限公司 | A kind of ultra-thin wafers piece saw blade repaiies knife method |
| CN109249285A (en) * | 2017-07-12 | 2019-01-22 | 株式会社迪思科 | Finishing board and dressing method |
| CN109249285B (en) * | 2017-07-12 | 2022-04-05 | 株式会社迪思科 | Finishing plate and finishing method |
| CN110098115A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | The cutting method of wafer |
| CN111633479A (en) * | 2020-06-15 | 2020-09-08 | 郑州磨料磨具磨削研究所有限公司 | Method for repairing scribing cutter for gallium arsenide wafer |
| CN113172780A (en) * | 2021-04-07 | 2021-07-27 | 郑州磨料磨具磨削研究所有限公司 | Scribing structure for cutting silicon carbide and online trimming method thereof |
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| CN102347275B (en) | 2014-02-19 |
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