CN102347275B - Method for sharpening blade of scribing machine - Google Patents
Method for sharpening blade of scribing machine Download PDFInfo
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- CN102347275B CN102347275B CN201010243418.7A CN201010243418A CN102347275B CN 102347275 B CN102347275 B CN 102347275B CN 201010243418 A CN201010243418 A CN 201010243418A CN 102347275 B CN102347275 B CN 102347275B
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Abstract
The invention provides a method for sharpening a blade of a scribing machine and relates to the field of application of integrated circuit encapsulation equipment. By the method, the technical problem of low cutting quality of a wafer in the prior art is solved. The method comprises the following steps of: installing the blade onto a main shaft of the scribing machine; and absorbing a sharpening plate onto a sheet absorption table of the scribing machine, wherein the main shaft drives the blade to rotate, and the sharpening plate moves at the same time according to a first sharpening depth along a scribing direction, so that the blade is sharpened on the sharpening plate for the first time; and the first sharpening depth is the depth of a scribing trace formed by the blade on the sharpening plate. By the method, the cutting quality of the wafer can be improved.
Description
Technical field
The present invention relates to integrated antenna package equipment application, refer to especially a kind of method for trimming of scribing machine blade.
Background technology
Scribing machine is on integrated antenna package line, and wafer (wafer) is cut into the independently equipment of circuit unit (die), and its cutting drives diamond cylindrical blade High Rotation Speed to realize by high-speed air static pressure electric main shaft.Not flanged diamond cylindrical blade is that endoporus is that φ 40mm, external diameter are the skive sheet that φ 50～70mm, thickness are 0.02～0.05mm.Because the cutting edge section of new blade is rectangle, and diamond particles is embedded in bonding agent, and in addition, blade is not to take the circle that spindle axis is the center of circle with the cutting edge of main shaft High Rotation Speed, and while making directly to use new cutter cutting crystal wafer, wafer bursts apart seriously.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method for trimming that improves the scribing machine blade of wafer cutting quality.
For solving the problems of the technologies described above, embodiments of the invention provide technical scheme as follows:
A method for trimming for scribing machine blade, comprising:
Blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of described scribing machine;
Described main shaft drives described blade rotation, described finishing board moves along cutting-up direction with the first finishing degree of depth simultaneously, described blade is repaired for the first time on described finishing board, and the described first finishing degree of depth is the degree of depth of the cutting-up vestige of described blade on described finishing board.
The method for trimming of described scribing machine blade, also comprises:
Described main shaft drives described blade rotation, described finishing board moves along cutting-up direction with the second finishing degree of depth simultaneously, described blade is repaired for the second time on described finishing board, the described second finishing degree of depth is greater than the described first finishing degree of depth, and depth of cut when the described second finishing degree of depth is greater than scribing machine section, the described second finishing degree of depth is the degree of depth of the cutting-up vestige of described blade on described finishing board, the degree of depth of cutting-up vestige when depth of cut during described scribing machine section is described blade cuts wafer on wafer.
The method for trimming of described scribing machine blade, also comprises:
From described suction sheet platform, remove described finishing board, and by wafer adsorption on the suction sheet platform of described scribing machine;
Depth of cut when described wafer is cut into slices with described scribing machine moves along cutting-up direction, described blade is repaired for the third time on described wafer, until the width of the slot that described blade forms on described wafer reaches predetermined value.
The translational speed that described finishing board moves along cutting-up direction with the first finishing degree of depth, for strengthening gradually, is repaired pre-stationary knife number every grade of speed.
The translational speed that described finishing board moves along cutting-up direction with the second finishing degree of depth, for strengthening gradually, is repaired pre-stationary knife number every grade of speed.
The translational speed that depth of cut when described wafer is cut into slices with described scribing machine moves along cutting-up direction is to strengthen gradually.
The scope of the described first finishing degree of depth is 0.1mm to 0.15mm.
The large 0.15mm to 0.35mm of depth of cut when scribing machine is cut into slices described in described the second finishing depth ratio.
Described blade is skive sheet, and described finishing board is diamond dust finishing board, and the particles of silicon carbide size of described skive sheet is corresponding with the particles of silicon carbide size of described diamond dust finishing board.
Corresponding being specially of particles of silicon carbide size of the particles of silicon carbide size of described skive sheet and described diamond dust finishing board:
Particles of silicon carbide is that 1700 object skive sheet coupling particles of silicon carbide are 600 order to 800 object diamond dust finishing boards;
Particles of silicon carbide is that 2000 object skive sheet coupling particles of silicon carbide are 800 order to 1000 object diamond dust finishing boards;
Particles of silicon carbide is that 3000 object skive sheet coupling particles of silicon carbide are 1000 order to 1200 object diamond dust finishing boards;
Particles of silicon carbide is that 4000 object skive sheet coupling particles of silicon carbide are 1200 order to 1500 object diamond dust finishing boards.
Embodiments of the invention have following beneficial effect:
In such scheme, blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of described scribing machine; Described main shaft drives described blade rotation, and described finishing board, with the first finishing degree of depth along the feeding of cutting-up direction, makes described blade on described finishing board, carry out cutting-up for the first time simultaneously.When production process is used scribing machine cutting crystal wafer, in advance the blade of scribing machine is polished, make the blade of scribing machine before use first from sharp, reduced wafer bursting apart when cutting, improved the cutting quality of wafer.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for trimming of scribing machine blade of the present invention;
Fig. 2 is in the application scenarios of method for trimming of scribing machine blade of the present invention, and main shaft, blade, finishing board and the installation of inhaling between sheet platform are related to schematic diagram;
Fig. 3 is schematic perspective view when skive sheet 1 switches on finishing board 2 in Fig. 2;
Fig. 4 (a) is in the application scenarios of method for trimming of scribing machine blade of the present invention, the cutaway view of repairing the cutlery shape after cutter process of step 2;
Fig. 4 (b) is in the application scenarios of method for trimming of scribing machine blade of the present invention, the cutaway view of repairing the cutlery shape after cutter process of step 3;
Fig. 5 (a) and Fig. 5 (b) are for blade is by repairing the contrast schematic diagram from sharp front and back;
Fig. 6 (a), Fig. 6 (b) and Fig. 6 (c) are for blade is by the contrast schematic diagram before and after the self-cavetto of finishing.
Embodiment
For technical problem, technical scheme and advantage that embodiments of the invention will be solved are clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Fig. 1 is the method for trimming of a kind of scribing machine blade of the present invention, as shown in Figure 2, is the local scheme of installation of scribing machine.Described method comprises:
In such scheme, blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of described scribing machine; Described main shaft drives described blade rotation, and described finishing board, with the first finishing degree of depth along the feeding of cutting-up direction, makes described blade on described finishing board, carry out cutting-up for the first time simultaneously.When production process is used scribing machine cutting crystal wafer, in advance the blade of scribing machine is polished, make the blade of scribing machine before use first from sharp, reduced wafer bursting apart when cutting, improved the cutting quality of wafer.
In order to make blade have better cutting quality, the method for trimming of described scribing machine blade, also comprises:
In order to make blade have better cutting quality, the method for trimming of described scribing machine blade, also comprises:
Wherein, described finishing board with the first finishing degree of depth along the feed speed of cutting-up direction feeding for strengthening gradually, every grade of speed, repair pre-stationary knife number;
Described finishing board with the second finishing degree of depth along the feed speed of cutting-up direction feeding for strengthening gradually, every grade of speed, repair pre-stationary knife number;
Depth of cut when described wafer is cut into slices with described scribing machine is to strengthen gradually along the feed speed of cutting-up direction feeding.
The scope of the described first finishing degree of depth is 0.1mm to 0.15mm.
The large 0.15mm to 0.35mm of depth of cut when scribing machine is cut into slices described in described the second finishing depth ratio.
Described blade is skive sheet, and described finishing board is diamond dust finishing board, and the particles of silicon carbide size of described skive sheet is corresponding with the particles of silicon carbide size of described diamond dust finishing board.
Corresponding being specially of particles of silicon carbide size of the particles of silicon carbide size of described skive sheet and described diamond dust finishing board:
Particles of silicon carbide is that 1700 object skive sheet coupling particles of silicon carbide are 600 order to 800 object diamond dust finishing boards;
Particles of silicon carbide is that 2000 object skive sheet coupling particles of silicon carbide are 800 order to 1000 object diamond dust finishing boards;
Particles of silicon carbide is that 3000 object skive sheet coupling particles of silicon carbide are 1000 order to 1200 object diamond dust finishing boards;
Particles of silicon carbide is that 4000 object skive sheet coupling particles of silicon carbide are 1200 order to 1500 object diamond dust finishing boards.
The application scenarios of the method for trimming of the not flanged diamond cylindrical of scribing machine of the present invention blade is below described, can improve the cutting quality of wafer, make blade in dressing process self-cavetto, from sharp and self-moulding, improve the useful life of blade, reduce production costs.Described method comprises:
Step 3, repaiies cutter for the second time by the second finishing degree of depth, and the second finishing degree of depth for example, for being greater than normal depth of cut 0.2-0.3mm: silicon chip depth of cut requires 0.2mm, and the finishing degree of depth is 0.4-0.5mm.Finishing board is along the feeding of cutting-up direction, and speed is also for example, to increase to gradually certain speed (for example 20-30mm/s) by (5mm/s) at a slow speed, and every grade of speed finishing knife, repairs 20 cuttves altogether, by Blade dress to the shape shown in Fig. 4 (b).Fig. 4 (b) is the cutlery shape after cutter process of repairing of step 3, and after finishing, cutlery is V-type shape for the second time, and H3 is the second finishing degree of depth.
Skive sheet 1 can be selected superthin diamond grinding wheel, and its diamond dust hardness is 7000kg/mm
2, temperature stability is 600-700 ℃.Particles of silicon carbide is selected 1700 orders (4-8 μ m), 2000 orders (4-6 μ m), 3000 orders (2-6 μ m), four kinds of models of 4000 orders (2-4 μ m).Finishing board can be selected the diamond dust finishing board of 75mm * 75mm * 1mm.The corresponding matching relationship of blade and finishing board is: particles of silicon carbide is the diamond dust finishing board that 1700 object blades mate 600 order-800 order particles; 2000 object blades mate the diamond dust finishing board of 800 order-1000 order particles; 3000 object blades mate the diamond dust finishing board of 1000 order-1200 order particles; 4000 object blades mate the diamond dust finishing board of 1200 order-1500 order particles.
Fig. 5 (a) and Fig. 5 (b) are for blade is by repairing the contrast schematic diagram from sharp front and back.The front view of supposing skive sheet is annulus, and Fig. 5 (a) and Fig. 5 (b) are respectively the local enlarged diagram of skive sheet part annulus.Fig. 5 (a) is the situation before Blade dress, and particles of silicon carbide 40 is embedded in cutlery metal material, or diamond particles is embedded in bonding agent, has passivation phenomenon.The schematic diagram that Fig. 5 (b) is cutlery after finishing, diamond dust is outside exposed, formed cutlery from sharp.
Fig. 6 (a), Fig. 6 (b) and Fig. 6 (c) are for blade is by the contrast schematic diagram before and after the self-cavetto of finishing.Fig. 6 (a) is that cutlery has just been installed to the situation before finishing on main shaft.The main shaft outer rim that numerical value a, b, c represent respectively scribing machine is the distance apart from blade outer rim at three differences, and now a, b, c are all unequal, cutlery and spindle eccentricity.Fig. 6 (b) is the movement locus of finishing forward spindle cutlery in rotary course, the consequence that this can cause the cutting-up degree of depth to differ.Fig. 6 (c) is for cutlery is through repairing after cutter, the schematic diagram concentric with main shaft, and cutlery has completed the self-cavetto of repairing in cutter process, and through finishing, the main shaft outer rim of scribing machine becomes identical at three differences apart from the distance of blade outer rim, is numerical value a.
In prior art, because the cutting edge section of new blade is that rectangle, diamond particles are embedded in bonding agent, blade is not to take circle that spindle axis is the center of circle to wait the reason of three aspects: with the cutting edge of main shaft High Rotation Speed, the consequence such as make directly to use that new cutter cutting crystal wafer produces that tool marks width is large, wafer bursts apart seriously, blade useful life is low.After using the method for trimming blade of scribing machine blade of the present invention to repair, then wafer is cut into slices, improved the quality of wafer cutting, reduced production cost.
In each embodiment of the method for the present invention; the sequence number of described each step can not be for limiting the sequencing of each step; for those of ordinary skills, do not paying under the prerequisite of creative work, the priority of each step is changed also within protection scope of the present invention.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. a method for trimming for scribing machine blade, is characterized in that, comprising:
Blade is installed on the main shaft of scribing machine, finishing board is adsorbed on the suction sheet platform of described scribing machine;
Described main shaft drives described blade rotation, described finishing board moves along cutting-up direction with the first finishing degree of depth simultaneously, described blade is repaired for the first time on described finishing board, and the described first finishing degree of depth is the degree of depth of the cutting-up vestige of described blade on described finishing board;
Described main shaft drives described blade rotation, described finishing board moves along cutting-up direction with the second finishing degree of depth simultaneously, described blade is repaired for the second time on described finishing board, the described second finishing degree of depth is greater than the described first finishing degree of depth, and depth of cut when the described second finishing degree of depth is greater than scribing machine section, the described second finishing degree of depth is the degree of depth of the cutting-up vestige of described blade on described finishing board, the degree of depth of cutting-up vestige when depth of cut during described scribing machine section is described blade cuts wafer on wafer.
2. the method for trimming of scribing machine blade according to claim 1, is characterized in that, also comprises:
From described suction sheet platform, remove described finishing board, and by wafer adsorption on the suction sheet platform of described scribing machine;
Depth of cut when described wafer is cut into slices with described scribing machine moves along cutting-up direction, described blade is repaired for the third time on described wafer, until the width of the slot that described blade forms on described wafer reaches predetermined value.
3. the method for trimming of scribing machine blade according to claim 1, is characterized in that,
The translational speed that described finishing board moves along cutting-up direction with the first finishing degree of depth, for strengthening gradually, is repaired pre-stationary knife number every grade of speed.
4. the method for trimming of scribing machine blade according to claim 1, is characterized in that,
The translational speed that described finishing board moves along cutting-up direction with the second finishing degree of depth, for strengthening gradually, is repaired pre-stationary knife number every grade of speed.
5. the method for trimming of scribing machine blade according to claim 2, is characterized in that,
The translational speed that depth of cut when described wafer is cut into slices with described scribing machine moves along cutting-up direction is to strengthen gradually.
6. the method for trimming of scribing machine blade according to claim 1, is characterized in that,
The scope of the described first finishing degree of depth is 0.1mm to 0.15mm.
7. the method for trimming of scribing machine blade according to claim 1, is characterized in that,
The large 0.15mm to 0.35mm of depth of cut when scribing machine is cut into slices described in described the second finishing depth ratio.
8. the method for trimming of scribing machine blade according to claim 1, is characterized in that,
Described blade is skive sheet, and described finishing board is diamond dust finishing board, and the particles of silicon carbide size of described skive sheet is corresponding with the particles of silicon carbide size of described diamond dust finishing board.
9. the method for trimming of scribing machine blade according to claim 8, is characterized in that, corresponding being specially of particles of silicon carbide size of the particles of silicon carbide size of described skive sheet and described diamond dust finishing board:
Particles of silicon carbide is that 1700 object skive sheet coupling particles of silicon carbide are 600 order to 800 object diamond dust finishing boards;
Particles of silicon carbide is that 2000 object skive sheet coupling particles of silicon carbide are 800 order to 1000 object diamond dust finishing boards;
Particles of silicon carbide is that 3000 object skive sheet coupling particles of silicon carbide are 1000 order to 1200 object diamond dust finishing boards;
Particles of silicon carbide is that 4000 object skive sheet coupling particles of silicon carbide are 1200 order to 1500 object diamond dust finishing boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243418.7A CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243418.7A CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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| CN102347275A CN102347275A (en) | 2012-02-08 |
| CN102347275B true CN102347275B (en) | 2014-02-19 |
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| CN201010243418.7A Expired - Fee Related CN102347275B (en) | 2010-08-02 | 2010-08-02 | Method for sharpening blade of scribing machine |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105216130B (en) | 2014-06-24 | 2019-04-19 | 恩智浦美国有限公司 | Cleaning device for semiconductor singulation saw |
| JP6576135B2 (en) * | 2015-07-14 | 2019-09-18 | 株式会社ディスコ | Cutting blade tip shape forming method |
| CN105789128B (en) * | 2016-03-22 | 2018-04-13 | 河南芯睿电子科技有限公司 | A kind of ultra-thin wafers piece saw blade repaiies knife method |
| JP6967386B2 (en) * | 2017-07-12 | 2021-11-17 | 株式会社ディスコ | Dressing method |
| CN110098115A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | The cutting method of wafer |
| CN111633479A (en) * | 2020-06-15 | 2020-09-08 | 郑州磨料磨具磨削研究所有限公司 | Method for repairing scribing cutter for gallium arsenide wafer |
| CN113172780B (en) * | 2021-04-07 | 2022-06-03 | 郑州磨料磨具磨削研究所有限公司 | Scribing structure for silicon carbide cutting and online trimming method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007203429A (en) * | 2006-02-03 | 2007-08-16 | Disco Abrasive Syst Ltd | Dressing/truing board and dressing truing method |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
Non-Patent Citations (1)
| Title |
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| JP特开2007-203429A 2007.08.16 |
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