CN105779970A - Gas spraying head and deposition device - Google Patents
Gas spraying head and deposition device Download PDFInfo
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- CN105779970A CN105779970A CN201410838723.9A CN201410838723A CN105779970A CN 105779970 A CN105779970 A CN 105779970A CN 201410838723 A CN201410838723 A CN 201410838723A CN 105779970 A CN105779970 A CN 105779970A
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Abstract
The invention discloses a gas spraying head and a deposition device. The gas spraying head comprises a cooling plate with an upper surface and a lower surface opposite to each other; the cooling plate includes a center area and a peripheral area; the peripheral area includes multiple cooling pipe areas; each cooling pipe area has a set of cooling pipes; one set of cooling pipes includes multiple arc pipe sections arranged from the center to the edge of the cooling plate in parallel; all the arc pipe sections are positioned on concentric circles with different radius; multiple connecting parts are arranged between the multiple arc pipe sections and the adjacent arc pipe sections; multiple ventilation grooves are formed among the connecting parts; the ventilation grooves penetrate through the cooling plate along the side walls of the adjacent arc pipe sections, and are positioned on the concentric circles with different radius; in one cooling pipe area, one set of ventilation grooves formed by the multiple ventilation grooves on the concentric circles with the same radius are communicated to a first gas output port and a second gas output port along with radius increment; and the center area includes multiple intake ports penetrating through the cooling plate. The gas spraying head can improve the film forming quality.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of gas spray and precipitation equipment.
Background technology
Chemical vapour deposition (CVD) (Chemicalvapordeposition, it is called for short CVD) it is that reacting substance issues biochemical reaction at gaseous condition, generate solid matter and be deposited on the solid matrix surface of heating, and then the Technology of prepared solid material, it is achieved by chemical vapor deposition unit.Specifically, reacting gas is passed in reative cell by CVD device by air intake installation, and controls the reaction conditions such as the pressure of reative cell, temperature so that reacting gas reacts, thus completing deposition process step.
Metal organic chemical vapor deposition (MetalOrganicChemicalVaporDeposition, MOCVD) device is mainly used in the preparation of the thin layer monocrystalline functional structure material of III-V, II-VI group compound or alloy, for instance gallium nitride, GaAs, indium phosphide, zinc oxide etc..Along with the range of application of described functional structure material constantly expands, metal organic chemical vapor deposition device has become as a kind of important chemical vapor deposition unit.Metal organic chemical vapor deposition is generally using II race or III metal organic source and VI race or V race hydride source as reacting gas, with hydrogen or nitrogen as carrier gas, on substrate, vapor phase epitaxial growth is carried out, thus growing the thin layer monocrystal material of various II-VI compound semiconductor, Group III-V compound semiconductor and their multivariate solid solution in pyrolysis mode.
But, not good with the film quality that existing metal organic chemical vapor deposition device is formed, it is therefore desirable to by improving metal organic chemical vapor deposition device, to promote the quality of forming film of device.
Summary of the invention
The problem that this invention address that is to provide a kind of gas spray and precipitation equipment, adopts the phase precipitation equipment quality of forming film of described gas spray to improve.
For solving the problems referred to above, the present invention provides a kind of gas spray, including: gas distribution grid, described gas distribution grid includes the first gas delivery port and the second gas delivery port, described first gas delivery port is used for exporting the first gas, and described second gas delivery port is used for exporting the second gas；Coldplate, described coldplate has relative upper and lower surface, and described coldplate includes center and surrounds the external zones of described center, and described external zones includes some cooling pipe districts, and some cooling pipe districts surround described center and are uniformly distributed；It is positioned at multiple cooling pipe districts of described coldplate external zones, there is in each cooling pipe district one group of cooling pipe, cooling pipe described in one group includes the multiple camber duct sections arranged from coldplate center to sides aligned parallel, each arc pipe section is respectively positioned on the concentric circular of different radii, and each arc pipe section two ends are all connected with adjacent arc pipe section so that coolant can circulate in each arc pipe section；Multiple connecting portion is included between the plurality of arc pipe section and adjacent arc pipe section, there is between described connecting portion multiple air channel, described air channel runs through described coldplate upper surface arrival lower surface along the sidewall of adjacent arc duct section, and described air channel is positioned on the concentric circular of different radii；In a cooling pipe district, the multiple air channels being positioned on the concentric circular of same Radius constitute one group of air channel, and along with the change of radius is big, different group air channels alternate communication respectively are to described first gas delivery port and the second gas delivery port；Described center include multiple air inlet, the plurality of air inlet runs through described coldplate center.
Optionally, described coldplate is generally circular in shape；Described center generally circular in shape；Described external zones be shaped as annular；Described cooling pipe district is shaped as coinciding with the partial sector of external zones, the arc limit of described sector and the coincident of described coldplate.
Optionally, in some cooling pipe districts, the arc pipe section being positioned at same concentric circular radius constitutes circle；Some arc pipe sections in some cooling pipe districts constitute the concentric circular that some circle radiuses are different.
Optionally, in some cooling pipe districts, the air channel being positioned at same concentric circular radius constitutes circle；Some air channels in some cooling pipe districts constitute some concentric circulars.
Optionally, in adjacent cooling pipe district, the air channel being positioned at same Radius can connect with the first gas delivery port and the second gas delivery port respectively, connect with the first gas delivery port simultaneously or connect with the second gas delivery port simultaneously.
Optionally, from coldplate center to edge, the length of described arc pipe section increases.
Optionally, the diameter of described coldplate is 450 millimeters～550 millimeters.
Optionally, the external zones of described coldplate also includes device region, has some device channel in described device region, the through described coldplate of described device channel.
Optionally, the quantity in described cooling pipe district is more than or equal to 2.
Optionally, the top shape of described air channel is bar shaped.
Optionally, the strip width at the two adjacent groups air channel top being positioned on different concentric circular radius is identical or different.
Optionally, the spacing of the two adjacent groups air channel being positioned on different concentric circular radius is 8 millimeters～12 millimeters.
Optionally, cooling pipe described in a group also includes: input port, delivery outlet, the input channel section carrying out connecting between input port with arc pipe section and carry out the output channel section connected between delivery outlet with arc pipe section.
Optionally, described air inlet is for by the 3rd gas, and described 3rd gas includes noble gas.
Optionally, the lower surface of described coldplate includes some fins arranged in parallel, has some grooves between adjacent lugs, and some fins constitute the concentric circular of some different radiis.
Optionally, the one end of the air channel being positioned on two adjacent rings concentric circular lays respectively at described fin top and bottom portion of groove.
Optionally, described fin top is 20 millimeters～30 millimeters to the distance of described coldplate upper surface；Described bottom portion of groove is 8 millimeters～12 millimeters to the distance of described coldplate upper surface.
Optionally, described gas distribution grid includes: is positioned at the first air chamber of described coldplate upper surface and is positioned at second air chamber on the first air chamber surface.
Optionally, also include: be positioned at the first pipeline of described first air chamber, described first pipeline and the first gas delivery port and connect；Running through some second pipes of described first air chamber, described some second pipes connect between the second gas delivery port and air channel.
Accordingly, the present invention also provides for a kind of precipitation equipment, including: reaction chamber；Being positioned at the pedestal bottom reaction chamber, described pedestal is suitable to rotate around central shaft, and described pedestal includes wafer area, and the surface, wafer area of described pedestal is used for placing wafer；It is positioned at the exhaust passage bottom reaction chamber；Gas spray described in any of the above-described item, the lower surface of described coldplate is relative with described base-plates surface.
Compared with prior art, technical scheme has the advantage that
In the gas spray of the present invention, coldplate includes center and surrounds some cooling pipe districts of described center；Having one group of cooling pipe in each cooling pipe district, cooling pipe described in a group includes the multiple camber duct sections arranged from coldplate center to sides aligned parallel, and each arc pipe section is respectively positioned on the concentric circular of different radii.In the adjacent connecting portion between arc pipe section, there is multiple air channel, the upper and lower surface of described air channel connection coldplate.Owing to some arc pipe sections are the concentric arrays of different radii, therefore, the air channel between arc pipe section is also the concentric arrays of different radii, and constitutes one group of air channel with the multiple air channels on the concentric circular of Radius.And, along with the change of radius is big, different group air channel alternate communication respectively, to described first gas delivery port or the second gas delivery port, are namely positioned at the many groups air channel on different radii concentric circular from coldplate center to edge, it is possible to alternately export the first gas and the second gas successively.Owing to described many group air channels are the concentric arrays of different radii such that it is able to the problem avoiding producing air channel difference in length at the edge of coldplate；And, two adjacent groups air channel exports the first gas and the second gas respectively, therefore the first gas exported and the flow equalization of the second gas, it can be avoided that the first gas exported at the marginal area of coldplate and the unbalanced problem of the second gas flow, thus suppressing the gas exported to produce eddy current in reaction chamber, it is ensured that the film thickness being formed at crystal column surface is uniform；Decrease the by-product being attached to reaction chamber inner wall surface, decrease the impurity in the thin film formed, improve film quality.
Further, the top shape of described air channel is bar shaped, from coldplate center to edge, the bar length at described air channel top increases, the air channel being positioned on same Radius concentric circular is made to can adapt to the concentrically ringed girth of place radius, so that the air channel being positioned on same Radius concentric circular in different cooling pipe district can constitute circle.
Further, the top shape of described air channel is bar shaped, and the strip width at the two adjacent groups air channel top being positioned on different concentric circular radius is identical or different.Owing to being positioned at air channel that two adjacent groups is positioned on different radii concentric circular for exporting the first gas and the second gas respectively, in order to make the flow of the first gas and the second gas exported can adapt to the film formation reaction carried out, the flow of described first gas and the second gas is different, therefore, the flow proportional enabling two adjacent groups air channel width and the first gas and the second gas on different concentric circular radius is needed to be associated, to improve the first gas and the utilization rate of the second gas, and improve the film quality formed.
Further, described center include multiple air inlet, the plurality of air inlet runs through described coldplate center, and described air inlet is for by the 3rd gas, and described 3rd gas includes noble gas.Described 3rd gas is not involved in the first gas and the film formation reaction of the second gas, and can from the base central surface apparent motion to the periphery for carrying wafer from the 3rd gas of coldplate center output, it is thus possible to the first gas of exporting of different radii concentric circular along promotion external zones and the second gas can be mutually mixed at crystal column surface, in order to described first gas and the second gas can carry out film formation reaction at crystal column surface.And, owing to there is the 3rd gas push at described base-plates surface, therefore, it is possible to overcome the prominent problem with base-plates surface of the wafer being positioned over base-plates surface, it is possible to avoid gas along base-plates surface and crystal column surface move time wild effect such that it is able to improve the quality of forming film of crystal column surface.
In the precipitation equipment of the present invention, including above-mentioned gas spray head, and the coldplate lower surface of gas spray is relative with the pedestal being used for placing wafer so that exported the first gas and the second gas towards pedestal by cold-zone plate following table.Owing to described pedestal can rotate around central shaft, and wafer is positioned over the surface, wafer area of described pedestal, thus, by rotating described pedestal, it is possible to make the first gas that coldplate lower surface exports and the second gas react and film forming at crystal column surface.Arc pipe section due to cooling pipe, and the air channel in connecting portion is all distributed in some different radii concentric circulars between arc pipe section, it is thus possible to avoid in the inconsistent problem of the edge generation air channel length of coldplate, ensure that the flow equalization of first gas that exports of edge of son coldplate lower surface and the second gas, first gas and the second gas can be mixed at crystal column surface fully, avoid subregion the first gas or the too much problem of the second gas, avoid eddy generation in reaction chamber, ensure that the quality of forming film of crystal column surface, the film thickness formed is uniform, impurity in thin film reduces, and the utilization rate of the first gas improved and the second gas, relatively little waste.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of a kind of spray head of the embodiment of the present invention；
Fig. 2 is the cross-sectional view of the metal organic chemical vapor deposition device adopting the spray head shown in Fig. 1；
Fig. 3 to Fig. 7 is the structural representation of the gas spray of the embodiment of the present invention；
Fig. 8 is the cross-sectional view of the present embodiment precipitation equipment.
Detailed description of the invention
As stated in the Background Art, the film quality with the formation of existing metal organic chemical vapor deposition device is not good.
Finding through research, refer to the plan structure schematic diagram that Fig. 1 and Fig. 2, Fig. 1 are a kind of spray heads of the embodiment of the present invention, Fig. 2 is the cross-sectional view of the metal organic chemical vapor deposition device adopting the spray head shown in Fig. 1.
Described spray head includes: be positioned at the spray panel 100 at reaction chamber top, described spray panel 100 includes the first mouth spray the 101, second mouth spray 102 and interval mouth spray 103, described first mouth spray the 101, second mouth spray 102 and interval mouth spray 103 are bar shaped, described first mouth spray 101 and the second mouth spray 102 interval successively are arranged, and have isolation mouth spray 103 between adjacent first mouth spray 101 and the second mouth spray 102；Described first mouth spray 101 is used for exporting the first reacting gas；Described second mouth spray 102 is used for exporting the second reacting gas, and described isolation mouth spray 103 is used for exporting separation gas.Wherein, described first reacting gas includes NH3、H2、N2In one or more；Described second reacting gas includes one or both of TMG, TMA；Described separation gas can be noble gas, for instance Ar.
But, owing to described spray panel 100 is circular, and described first mouth spray the 101, second mouth spray 102 and interval mouth spray 103 are bar shaped, and therefore, the length of described first mouth spray the 101, second mouth spray 102 and interval mouth spray 103 is inconsistent.Owing to adjacent first mouth spray 101 and the second mouth spray 102 have difference in length at the marginal area of spray panel 100, as shown in the A of region, cause described spray panel marginal area the output of the first gas and the second gas inconsistent, then easily make the gas gone out described in described spray panel frontside edge produce eddy current in reaction chamber, be easily generated eddy current particularly in the reaction chamber marginal area content corresponding to described spray panel 101 edge.
It is unstable that produced eddy current is easily caused reaction chamber room test, and reacting gas easily falls after rise to reacting crystal column surface along eddy current, then causes that the uneven film thickness of be formed at some reaction crystal column surfaces is even.
And, described eddy current easily evokes byproduct of reaction, and be further driven to described byproduct of reaction and be attached to the inner wall surface of reaction chamber, and be attached to the byproduct of reaction on reaction chamber inwall and easily fall after rise to reacting crystal column surface with air-flow, the thin film formed is polluted, then the film quality formed is deteriorated.
In addition, owing to the first mouth spray 101 and second mouth spray 102 of described spray face panel edges have difference in length, the first gas that described spray face panel edges exports and the second gas flow is caused to there are differences, then described first gas and the second gas easily generate extra by-product, for instance by TMA and NH3Adduct (adduct) CH generated3Al:NH3, or such as oligomer (oligomar) [(CH3)2AlNH2]3.Owing to described first gas and the second gas easily generate extra by-product, thus causing described first gas or the second gas are caused unnecessary waste.
In order to solve the problems referred to above, the present invention provides a kind of gas spray and precipitation equipment.In described gas spray, coldplate includes center and surrounds some cooling pipe districts of described center；Having one group of cooling pipe in each cooling pipe district, cooling pipe described in a group includes the multiple camber duct sections arranged from coldplate center to sides aligned parallel, and each arc pipe section is respectively positioned on the concentric circular of different radii.In the adjacent connecting portion between arc pipe section, there is multiple air channel, the upper and lower surface of described air channel connection coldplate.Owing to some arc pipe sections are the concentric arrays of different radii, therefore, the air channel between arc pipe section is also the concentric arrays of different radii, and constitutes one group of air channel with the multiple air channels on the concentric circular of Radius.And, along with the change of radius is big, different group air channel alternate communication respectively, to described first gas delivery port or the second gas delivery port, are namely positioned at the many groups air channel on different radii concentric circular from coldplate center to edge, it is possible to alternately export the first gas and the second gas successively.Owing to described many group air channels are the concentric arrays of different radii such that it is able to the problem avoiding producing air channel difference in length at the edge of coldplate；And, two adjacent groups air channel exports the first gas and the second gas respectively, therefore the first gas exported and the flow equalization of the second gas, it can be avoided that the first gas exported at the marginal area of coldplate and the unbalanced problem of the second gas flow, thus suppressing the gas exported to produce eddy current in reaction chamber, it is ensured that the film thickness being formed at crystal column surface is uniform；Decrease the by-product being attached to reaction chamber inner wall surface, decrease the impurity in the thin film formed, improve film quality.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
Fig. 3 to Fig. 7 is the structural representation of the gas spray of the embodiment of the present invention.
Refer to the cut-away section structural representation that Fig. 3 and Fig. 4, Fig. 3 are gas sprays, Fig. 4 is the perspective view of the coldplate in gas spray.
Described gas spray includes:
Gas distribution grid 200, described gas distribution grid 200 includes the first gas delivery port 201 and the second gas delivery port 202, and described first gas delivery port 201 is used for exporting the first gas, and described second gas delivery port 202 is used for exporting the second gas；
Coldplate 300, described coldplate 300 has relative upper surface 310 and lower surface 320, described coldplate 300 includes center 301 and surrounds the external zones of described center 301, described external zones includes some cooling pipe districts 302, and some cooling pipe districts 302 surround described center 301 and are uniformly distributed；
It is positioned at multiple cooling pipe districts 302 of described coldplate 300 external zones, there is in each cooling pipe district 302 one group of cooling pipe, cooling pipe described in one group includes the multiple camber duct sections 330 arranged from coldplate 300 center to sides aligned parallel, each arc pipe section 330 is respectively positioned on the concentric circular of different radii, and each arc pipe section 330 two ends are all connected with adjacent arc pipe section 330 so that coolant can circulate in each arc pipe section 330；
Multiple connecting portion is included between the plurality of arc pipe section 330 and adjacent arc pipe section 330, there is between described connecting portion multiple air channel 332, described air channel 332 runs through described coldplate 300 upper surface 310 along the sidewall of adjacent arc duct section 330 and arrives lower surface 320, and described air channel 332 is positioned on the concentric circular of different radii；
In a cooling pipe district 302, the multiple air channels 332 being positioned on the concentric circular of same Radius constitute one group of air channel 332, along with the change of radius is big, different group air channels 332 alternate communication respectively are to described first gas delivery port 201 and the second gas delivery port 202；
Described center 301 include multiple air inlet 304, the plurality of air inlet 304 runs through described coldplate 300 center 301.
Hereinafter above-mentioned gas spray head will be described in detail.
Described gas spray is for the spray equipment as chemical vapor deposition unit.In the present embodiment, described gas spray is as the spray equipment of metal organic chemical vapor deposition device.In other embodiments, described gas spray can also be used to the spray equipment as other chemical vapor deposition unit, for instance low-pressure chemical vapor deposition device, plasma enhanced chemical vapor deposition unit etc..
The first gas exported by described gas distribution grid 200 and the second gas are exported towards the pedestal in chemical vapor deposition unit by described coldplate, in order to form thin film at the crystal column surface being placed on pedestal.In the present embodiment, described pedestal can rotate around central shaft, so that the first gas and the second gas can be sufficiently mixed at crystal column surface, therefore described pedestal is generally circular in shape, and the shape of described gas spray is corresponding with the shape of pedestal, the shape of described gas spray is also circular, and namely described gas distribution grid 200 and coldplate 300 are circular.In other embodiments, described gas spray can also be square, polygon or arbitrarily can the shape of fiting chemical vapor phase growing apparatus towards the shape of pedestal.
Concrete, owing to difference group air channel 332 alternate communication respectively is to described first gas delivery port 201 and the second gas delivery port 202, therefore alternately exported the first gas and the second gas respectively by the air channel 332 of difference group.Again owing to described air channel 332 runs through coldplate, and it is positioned on the concentric circular of different radii, therefore, described first gas and the second gas are with the concentric circles of different radii, radial direction alternately output along described coldplate 300, therefore, even if rotating described gas spray along central shaft, the concentric circles that described first gas and the second gas remain unchanged in different radii exports, the first gas and the mixing of the second gas thus cannot be made by the described gas spray of rotation, therefore, need to make described pedestal rotate along central shaft, to drive the first gas and the second gas can be sufficiently mixed on the wafer of base-plates surface.Therefore, the shape of described gas spray keeps consistent with the shape of pedestal, rounded.
The diameter of described coldplate 300 is 450 millimeters～550 millimeters；In the present embodiment, the diameter of described coldplate 300 is 500 millimeters.The thickness of described coldplate 300 is 20 millimeters～30 millimeters, and in the present embodiment, the thickness of described coldplate 300 is 25 millimeters.
In the present embodiment, owing to described gas spray is as the spray equipment of metal organic chemical vapor deposition device, therefore, described first gas includes group iii elements or group-v element；Described second gas is one or more in nitrogenous gas, hydrogen-containing gas, oxygen-containing gas；Gas containing group iii elements and the gas containing group-v element and described nitrogenous gas, hydrogen-containing gas or oxygen-containing gas can react in high temperature environments, and form metallo organic material thin film.In the present embodiment, described first gas includes trimethyl aluminium (TMA) or trimethyl gallium (TMG)；Described second gas includes ammonia, nitrogen or hydrogen.
Coldplate 300 in the present embodiment is circular, and described center 301 is generally circular in shape；Described external zones be shaped as annular；Described cooling pipe district 302 is shaped as coinciding with the partial sector of external zones, the coincident of the arc limit of described sector and described coldplate 300.
In described center 301, having some air inlets 304 running through described coldplate, described air inlet 304 is for by the 3rd gas, and described 3rd gas is for promoting the mixing of described first gas and the second gas.In the present embodiment, described 3rd gas includes noble gas, and described noble gas can be argon or helium.And, central area due to the corresponding pedestal in described center 301, and the central area of pedestal includes center of rotation axle, base central region surface cannot film forming, therefore, will not placing wafer in base central region surface, therefore, described center 301 exports the 3rd gas and will not the film forming of crystal column surface be impacted.In the present embodiment, the lower surface 320 of described center 301 caves in relative to the lower surface 320 of external zones.
Owing to described 3rd gas exports to pedestal from the center 301 of coldplate 300, along with the rotation of pedestal, described 3rd gas can be driven by described pedestal, at radial direction along described pedestal of pedestal and crystal column surface, from base central outwardly；Due to described in different radii concentric circular the air channel 332 of distribution along described coldplate radial direction alternately output the first gas and the second gas, therefore, at base-plates surface, from center, the 3rd gas outwardly can make the first gas that encirclement center 301 exports and the second gas be mutually mixed along pedestal radial direction, so that the first gas and the second gas can be sufficiently mixed and film forming at crystal column surface.
The upper surface 310 of coldplate 300 is illustrated please continue to refer to Fig. 4, Fig. 4.There is cooling pipe and for exporting the air channel 332 of the first gas and the second gas in cooling pipe district 302 in described coldplate 300.Owing to described air channel 332 needs to run through described coldplate 300, therefore the distribution shape of described air channel 332 needs to coordinate the arrangement shape of described cooling pipe.
The quantity in described cooling pipe district 302 is more than or equal to 2.In the present embodiment, the quantity in described cooling pipe district 302 is 2～4.In one embodiment, as shown in Figure 4, the quantity in described cooling pipe district 302 is 2.In another embodiment, as it is shown in figure 5, the quantity in described cooling pipe district 302 is 3, Fig. 5 be described in be the plan structure schematic diagram of coldplate 300 upper surface 310 with 3 cooling pipe districts 302.
And the quantity in described cooling pipe district 302 is more many, cooling pipe length in described cooling pipe district 302 is more short, after then passing into coolant in described cooling pipe, the path that described coolant flows through is more short, the temperature contrast of coolant is less, then the cooling of coldplate 300 is more uniformly distributed by described coolant.
In the present embodiment, between two adjacent cooling pipe districts 302, also include device region, there is some device channel 305 in described device region, the through described coldplate of described device channel 305, and described device channel 305 arranges along the radial direction of described coldplate 300.Being used for arranging sensor in described device channel, described sensor can be temperature sensor, pressure transducer etc.；Described sensor is for monitoring by the gas temperature of described coldplate 300, pressure and other parameters, in order to manufacturing process is adjusted, detects and monitors.
In each cooling pipe district 302, including the some arc pipe sections 330 arranged in parallel along coldplate 300 radial direction, some arc pipe sections 330 are positioned on the concentric circular of different radii；And the two ends of each arc pipe section 330 connect with one end of adjacent two arc pipe sections 330 respectively, making some arc pipe sections is serpentine arrangement along the radial direction of coldplate 300, thus constituting cooling pipe 303 (as shown in Figure 5) a group through, i.e. a through cooling pipe in each cooling pipe district.
And, due to the partial sector areas beyond district 301 centered by described cooling pipe district 302, therefore, in a cooling pipe district 302, the length of some arc pipe sections 330 is gradually increased from inside to outside along coldplate 300 radial direction, the length making some arc pipe sections 330 can adapt to the shape of described partial sector areas so that arc pipe section 330 can fully be distributed in coldplate 300, in order to the temperature of coldplate 300 is controlled uniformly.
Additionally, cooling pipe 303 also includes described in one group: 333, one, input port delivery outlet 334, the input channel section carrying out connecting between input port 333 with arc pipe section 330 and carry out the output channel section connected between delivery outlet 334 with arc pipe section 330.In the present embodiment, described input port 333 is connected with the arc pipe section 330 of innermost circle by input channel section, described delivery outlet 334 is connected with the arc pipe section of outmost turns by output channel section, coolant is made to flow into the arc pipe section 330 of innermost circle from input port 333, along coldplate 300 radial direction outwardly through each arc pipe section 330, it flow to the arc pipe section 330 of outmost turns in serpentine, and flow out delivery outlet 334 via output channel section.Owing to described output channel section is connected with the arc pipe section 330 of outmost turns, the length of described output channel section is shorter, then the coolant of intensification will not be made to cause coldplate 300 temperature to improve.
In the present embodiment, cooling pipe 303 described in described one group is the groove structure of arrangement in serpentine, the bottom of described groove structure constitutes the lower surface 320 of coldplate 300, and welded closure is passed through by cover layer in the top of described groove structure, in order at the pipeline that groove structure internal groove is closed.The upper surface 310 of coldplate 300 described in described cover layer groove；The material of described cover layer can be alloy material.The degree of depth of described groove structure is 8 millimeters～12 millimeters；In the present embodiment, the degree of depth of described groove structure is 10 millimeters.
In one group of cooling pipe 303, there is between adjacent two arc pipe sections 330 some connecting portions 331 (as shown in Figure 5), described connecting portion is used for connecting some arc pipe sections, arc pipe section 330 can be connected with each other and become overall, to constitute the external zones 302 of coldplate 300.And air channel 332 can be constituted between adjacent two connecting portions 331 so that described air channel 332 is between adjacent mutual duct section 330, and through described coldplate, makes described air channel 332 can pass through the first gas and the second gas.
In the present embodiment, the top shape of described air channel 332 is bar shaped.The strip width at described air channel 332 top is 0.8 millimeter～1.2 millimeters；In the present embodiment, the strip width at described air channel 332 top is 1 millimeter.The spacing of the two adjacent groups air channel 332 being positioned on different concentric circular radius is 8 millimeters～12 millimeters；In the present embodiment, the spacing of two adjacent groups air channel 332 is 10 millimeters.
The strip width at described air channel 332 top determines the gas flow of described air channel 332 output, therefore, by adjusting the strip width at described air channel 332 top, first gas flow of described air channel 332 output or the second gas flow can be adjusted, make described first gas flow or the second gas flow can adapt to manufacturing process.
The spacing of two adjacent groups air channel 332 determines the distance between the first gas and the second gas exported；Distance between two groups of air channels 332 is unsuitable too small, and otherwise namely the first gas and the second gas can mix in the bigger position of distance base-plates surface distance, then can affect the quality of forming film of crystal column surface；And the distance between two groups of air channels 332 should not be excessive, otherwise first gas the second gas is difficult to be sufficiently mixed at crystal column surface.Therefore, in the present embodiment, when the spacing of two adjacent groups air channel 332 is 8 millimeters～12 millimeters, especially 10 millimeters time, it is possible to make the first gas and the second gas just fully mix at crystal column surface, it is possible to increase quality of forming film and uniformity.
Due to the partial sector areas beyond district 301 centered by described cooling pipe district 302, in a cooling pipe district 302, in order to make each group of air channel 332 can adapt to the arc length of described partial sector areas different radii, along described coldplate 300 radial direction from center to edge, the bar length at described air channel 332 top is gradually increased, described air channel 332 is made can be fully distributed in described coldplate 300 so that the first gas and the second gas can uniformly export from described coldplate 300 and fully be distributed in above pedestal.
And, in a cooling pipe district 302, two adjacent groups air channel 332 is respectively used to output the first gas and the second gas, and in manufacturing process, the flow of described first gas and the second gas can be identical or different.For the gas flow making described air channel 332 adapt in manufacturing process, the strip width at two adjacent groups air channel 332 top being positioned on different concentric circular radius can be identical or different；Concrete, when the first gas and the second gas flow are identical, the strip width at two adjacent groups air channel 332 top is identical；When the first gas and the second gas flow are different, the strip width at two adjacent groups air channel 332 top is different.
In some cooling pipe districts 302, it is positioned at same concentric circular radius and is positioned at the arc pipe section 330 in different cooling pipe district 302 and constitutes circle；And the some arc pipe sections 330 in some cooling pipe districts 302 constitute the concentric circular that some circle radiuses are different.
Accordingly, in some cooling pipe districts 302, it is positioned at same concentric circular radius and is positioned at the air channel 332 in different cooling pipe district 302 and constitutes circle；Some air channels 332 in some cooling pipe districts 302 constitute some concentric circulars.
Along described coldplate 300 radial direction, different group air channel 332 alternately output the first gas and the second gases, and organize air channel more and be positioned on the concentric circular of different radii, it is thus possible to avoid there is difference in length because of the air channel at coldplate 300 edge, and the problem making the mass flow discrepancy weighing apparatus of the first gas that coldplate 300 edge exports and the second gas.Thus, adopt in the precipitation equipment that described gas spray is constituted, it is possible to suppress the gas exported to produce eddy current in reaction chamber, it is ensured that the film thickness being formed at crystal column surface is uniform.It is additionally, since the eddy current in reaction chamber to reduce, it is possible to avoid the inner wall surface at reaction chamber to adhere to by-product, falling the by-product to crystal column surface thus decreasing after rise with eddy current, decreasing the impurity in the thin film formed, improve film quality.
In one embodiment, in adjacent cooling pipe district 302, the air channel 332 being positioned at same Radius can connect with the first gas delivery port 201 and the second gas delivery port 202 respectively；Namely in adjacent cooling pipe district 302, it is positioned at the air channel 332 on same Radius concentric circular and can export the first gas and the second gas respectively, may advantageously facilitate the first gas and the second gas is sufficiently mixed at crystal column surface.
In another embodiment, in adjacent cooling pipe district 302, the air channel 332 being positioned at same Radius can connect with the first gas delivery port 201 simultaneously or be connected with the second gas delivery port 202 simultaneously；Namely, in adjacent cooling pipe district 302, it is positioned at the air channel 332 on same Radius concentric circular and can export the first gas or the second gas respectively.
Refer to the part section structural representation that Fig. 6, Fig. 6 are coldplates.
The lower surface 320 of described coldplate 300 includes some fins 340 arranged in parallel, has some grooves 341 between adjacent lugs 340, and the shape at described fin 340 top is rounded, and some fins 340 constitute the concentric circular of some different radiis.Described fin 340 top is 20 millimeters～30 millimeters to the distance of described coldplate 300 upper surface 310；In the present embodiment, described fin 340 top is 25 millimeters to the distance of described coldplate 300 upper surface 310.Bottom described groove 341, the distance to described coldplate 300 upper surface 310 is 8 millimeters～12 millimeters, and namely described fin 340 top is 8 millimeters～22 millimeters to the distance bottom groove 341；In the present embodiment, bottom described groove 341, the distance to described coldplate 300 upper surface 310 is 10 millimeters, and namely described fin 340 top is 15 millimeters to the distance bottom groove 341.
One end of two adjacent groups air channel 332 lays respectively at bottom described fin 340 top and groove 341, is conducive to enabling the gas that two adjacent groups air channel 332 exports mutually isolated.In the present embodiment, output the first gas and the second gas it is respectively used to due to two groups of air channels 332, so that at distance base-plates surface apart from identical position, the flow velocity of the first gas and the second gas is inconsistent, it is possible to avoid the first gas and the second gas to interfere apart from identical position at distance base-plates surface, thus ensure that the steady air current of the first gas and the second gas exported.
Refer to the cross-sectional view that Fig. 7, Fig. 7 are gas sprays.
Described gas distribution grid 200 includes: is positioned at the first air chamber 210 of described coldplate 300 upper surface 301 and is positioned at second air chamber 220 on the first air chamber 210 surface.In the present embodiment, described first air chamber 210 is used for being distributed the first gas；Described second air chamber 220 is used for being distributed the second gas.
Described gas distribution grid 200 also includes: being positioned at the first pipeline 211 of described first air chamber 210, described first pipeline 211 is connected with the first gas delivery port 201；Running through some second pipes 221 of described first air chamber 210, described some second pipes 221 connect between the second gas delivery port 202 and air channel 332.
Owing to described first air chamber 210 is positioned at described coldplate 300 surface, therefore described first gas delivery port 201 is directly corresponding with air channel 332 connects.In the present embodiment, each first pipeline 211 is connected with an air channel 332, for carrying the first gas to the air channel 332 connected；Each second pipe 221 is connected with an air channel 332, for carrying the second gas to the air channel 332 connected.In another embodiment, can not also have described first pipeline 211 in described first air chamber 210, and connect with corresponding air channel 332 either directly through the first gas delivery port 201.
In one embodiment, described gas distribution grid 200 can also include the 3rd air chamber that is positioned at the second air chamber 220 surface；Running through some 3rd pipelines (sign) of described first air chamber 210 and the second air chamber 220, described some 3rd pipelines connect between the 3rd air chamber and air inlet 304.Described 3rd air chamber is used for being distributed the 3rd gas, and the 3rd gas in the present embodiment is noble gas；By described 3rd pipeline, it is possible to carry the 3rd gas to described air inlet 304.
To sum up, in the present embodiment, coldplate includes center and surrounds some cooling pipe districts of described center；Having one group of cooling pipe in each cooling pipe district, cooling pipe described in a group includes the multiple camber duct sections arranged from coldplate center to sides aligned parallel, and each arc pipe section is respectively positioned on the concentric circular of different radii.In the adjacent connecting portion between arc pipe section, there is multiple air channel, the upper and lower surface of described air channel connection coldplate.Owing to some arc pipe sections are the concentric arrays of different radii, therefore, the air channel between arc pipe section is also the concentric arrays of different radii, and constitutes one group of air channel with the multiple air channels on the concentric circular of Radius.And, along with the change of radius is big, different group air channel alternate communication respectively, to described first gas delivery port or the second gas delivery port, are namely positioned at the many groups air channel on different radii concentric circular from coldplate center to edge, it is possible to alternately export the first gas and the second gas successively.Owing to described many group air channels are the concentric arrays of different radii such that it is able to the problem avoiding producing air channel difference in length at the edge of coldplate；And, two adjacent groups air channel exports the first gas and the second gas respectively, therefore the first gas exported and the flow equalization of the second gas, it can be avoided that the first gas exported at the marginal area of coldplate and the unbalanced problem of the second gas flow, thus suppressing the gas exported to produce eddy current in reaction chamber, it is ensured that the film thickness being formed at crystal column surface is uniform；Decrease the by-product being attached to reaction chamber inner wall surface, decrease the impurity in the thin film formed, improve film quality.
Accordingly, the embodiment of the present invention also provides for a kind of precipitation equipment, refer to the cross-sectional view that Fig. 8, Fig. 8 are the present embodiment precipitation equipments.
Described precipitation equipment, including:
Reaction chamber 400；
Being positioned at the pedestal 401 bottom reaction chamber 400, described pedestal 401 is suitable to rotate around central shaft, and described pedestal 401 includes wafer area 410, and the surface, wafer area 410 of described pedestal 401 is used for placing wafer；
It is positioned at the exhaust passage 402 bottom reaction chamber 400；
Gas spray 403 as described in Fig. 3 to Fig. 7, the lower surface of described coldplate 300 is relative with described pedestal 401 surface.
Hereinafter precipitation equipment will be described in detail.
In the present embodiment, described precipitation equipment is metal organic chemical vapor deposition device.In other embodiments, described precipitation equipment can also be the spray equipment of other chemical vapor deposition unit, for instance low-pressure chemical vapor deposition device, plasma enhanced chemical vapor deposition unit etc..
The first gas exported by described gas distribution grid and the second gas are exported towards pedestal 401 by described coldplate 300, in order to form thin film at the crystal column surface being placed on pedestal 401.In the present embodiment, described pedestal 401 can rotate around central shaft, so that the first gas and the second gas can be sufficiently mixed at crystal column surface, therefore described pedestal 401 is generally circular in shape, and the shape of described gas spray 403 is corresponding with the shape of pedestal 401, the shape of described gas spray 403 is also circular, and namely described gas distribution grid and coldplate 300 are circular.In other embodiments, described gas spray can also be square, polygon or arbitrarily can the shape of fiting chemical vapor phase growing apparatus towards the shape of pedestal.
Concrete, the first gas and the second gas is alternately exported respectively due to difference group air channel, and described air channel 332 is positioned on the concentric circular of different radii, described first gas and the second gas input in described reaction chamber 400 with the concentric circles of different radii, therefore, need to make described pedestal 401 rotate along central shaft, to drive the first gas and the second gas can be sufficiently mixed on the wafer on pedestal 401 surface.Therefore, the shape of described gas spray 403 keeps consistent with the shape of pedestal, rounded.
The center of described coldplate 300 is used for exporting the 3rd gas, and described 3rd gas is for promoting the mixing of described first gas and the second gas.In the present embodiment, described 3rd gas includes noble gas, and described noble gas can be argon or helium.The center of coldplate 300 is corresponding to the central area of pedestal 401, and the central area of pedestal includes center of rotation axle, the surface, central area of described pedestal 401 formed thickness all with interior thin film, therefore, on the surface, central area of pedestal 401, wafer area 410 will not be set, therefore, the quality of forming film of crystal column surface will not be impacted by described coldplate 300 center output the 3rd gas.
Owing to described 3rd gas exports to pedestal 401 from the center of coldplate 300, rotation along with pedestal 401, described 3rd gas can be driven by described pedestal 401, on pedestal 401 and surface, wafer area 410 along the radial direction of described pedestal 401, from pedestal 401 center outwardly；Due to described in different radii concentric circular the air channel of distribution along described coldplate 300 radial direction alternately output the first gas and the second gas, therefore, on pedestal 401 surface, from center, the 3rd gas outwardly can make the first gas that encirclement center 301 exports and the second gas be mutually mixed along pedestal 401 radial direction, so that the first gas and the second gas can be sufficiently mixed and film forming at crystal column surface.
And, owing to there is the 3rd gas push on described pedestal 401 surface, therefore, it is possible to overcome the prominent problem with pedestal 401 surface of the wafer being positioned over pedestal 401 surface, it can be avoided that the wild effects such as the flow-disturbing occurred when gas moves along pedestal 401 surface and crystal column surface such that it is able to improve the quality of forming film of crystal column surface.
To sum up, in the present embodiment, precipitation equipment includes above-mentioned gas spray head, and the coldplate lower surface of gas spray is relative with the pedestal being used for placing wafer so that exported the first gas and the second gas towards pedestal by cold-zone plate following table.Owing to described pedestal can rotate around central shaft, and wafer is positioned over the surface, wafer area of described pedestal, thus, by rotating described pedestal, it is possible to make the first gas that coldplate lower surface exports and the second gas react and film forming at crystal column surface.Arc pipe section due to cooling pipe, and the air channel in connecting portion is all distributed in some different radii concentric circulars between arc pipe section, it is thus possible to avoid in the inconsistent problem of the edge generation air channel length of coldplate, ensure that the flow equalization of first gas that exports of edge of son coldplate lower surface and the second gas, first gas and the second gas can be mixed at crystal column surface fully, avoid subregion the first gas or the too much problem of the second gas, avoid eddy generation in reaction chamber, ensure that the quality of forming film of crystal column surface, the film thickness formed is uniform, impurity in thin film reduces, and the utilization rate of the first gas improved and the second gas, relatively little waste.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (19)
1. a gas spray, it is characterised in that including:
Gas distribution grid, described gas distribution grid includes the first gas delivery port and the second gas delivery port, and described first gas delivery port is used for exporting the first gas, and described second gas delivery port is used for exporting the second gas；
Coldplate, described coldplate has relative upper and lower surface, and described coldplate includes center and surrounds the external zones of described center, and described external zones includes some cooling pipe districts, and some cooling pipe districts surround described center and are uniformly distributed；
It is positioned at multiple cooling pipe districts of described coldplate external zones, there is in each cooling pipe district one group of cooling pipe, cooling pipe described in one group includes the multiple camber duct sections arranged from coldplate center to sides aligned parallel, each arc pipe section is respectively positioned on the concentric circular of different radii, and each arc pipe section two ends are all connected with adjacent arc pipe section so that coolant can circulate in each arc pipe section；
Multiple connecting portion is included between the plurality of arc pipe section and adjacent arc pipe section, there is between described connecting portion multiple air channel, described air channel runs through described coldplate upper surface arrival lower surface along the sidewall of adjacent arc duct section, and described air channel is positioned on the concentric circular of different radii；
In a cooling pipe district, the multiple air channels being positioned on the concentric circular of same Radius constitute one group of air channel, and along with the change of radius is big, different group air channels alternate communication respectively are to described first gas delivery port and the second gas delivery port；
Described center include multiple air inlet, the plurality of air inlet runs through described coldplate center.
2. gas spray as claimed in claim 1, it is characterised in that described coldplate generally circular in shape；Described center generally circular in shape；Described external zones be shaped as annular；Described cooling pipe district is shaped as coinciding with the partial sector of external zones, the arc limit of described sector and the coincident of described coldplate.
3. gas spray as claimed in claim 2, it is characterised in that in some cooling pipe districts, the arc pipe section being positioned at same concentric circular radius constitutes circle；Some arc pipe sections in some cooling pipe districts constitute the concentric circular that some circle radiuses are different.
4. gas spray as claimed in claim 2, it is characterised in that in some cooling pipe districts, the air channel being positioned at same concentric circular radius constitutes circle；Some air channels in some cooling pipe districts constitute some concentric circulars.
5. gas spray as claimed in claim 4, it is characterized in that, in adjacent cooling pipe district, the air channel being positioned at same Radius can connect with the first gas delivery port and the second gas delivery port respectively, connect with the first gas delivery port simultaneously or connect with the second gas delivery port simultaneously.
6. gas spray as claimed in claim 2, it is characterised in that from coldplate center to edge, the length of described arc pipe section increases.
7. gas spray as claimed in claim 2, it is characterised in that the diameter of described coldplate is 450 millimeters～550 millimeters.
8. gas spray as claimed in claim 1, it is characterised in that the external zones of described coldplate also includes device region, has some device channel in described device region, the through described coldplate of described device channel.
9. gas spray as claimed in claim 1, it is characterised in that the quantity in described cooling pipe district is more than or equal to 2.
10. gas spray as claimed in claim 1, it is characterised in that the top shape of described air channel is bar shaped.
11. gas spray as claimed in claim 10, it is characterised in that the strip width at the two adjacent groups air channel top being positioned on different concentric circular radius is identical or different.
12. gas spray as claimed in claim 1, it is characterised in that the spacing of the two adjacent groups air channel being positioned on different concentric circular radius is 8 millimeters～12 millimeters.
13. gas spray as claimed in claim 1, it is characterized in that, cooling pipe described in a group also includes: input port, delivery outlet, the input channel section carrying out connecting between input port with arc pipe section and carry out the output channel section connected between delivery outlet with arc pipe section.
14. gas spray as claimed in claim 1, it is characterised in that described air inlet is for by the 3rd gas, and described 3rd gas includes noble gas.
15. gas spray as claimed in claim 1, it is characterised in that the lower surface of described coldplate includes some fins arranged in parallel, has some grooves between adjacent lugs, some fins constitute the concentric circular of some different radiis.
16. gas spray as claimed in claim 15, it is characterised in that the one end of the air channel being positioned on two adjacent rings concentric circular lays respectively at described fin top and bottom portion of groove.
17. gas spray as claimed in claim 15, it is characterised in that described fin top is 20 millimeters～30 millimeters to the distance of described coldplate upper surface；Described bottom portion of groove is 8 millimeters～12 millimeters to the distance of described coldplate upper surface.
18. gas spray as claimed in claim 1, it is characterized in that, described gas distribution grid includes: is positioned at the first air chamber of described coldplate upper surface and is positioned at second air chamber on the first air chamber surface, also include: be positioned at the first pipeline of described first air chamber, described first pipeline and the first gas delivery port and connect；Running through some second pipes of described first air chamber, described some second pipes connect between the second gas delivery port and air channel.
19. a precipitation equipment, it is characterised in that including:
Reaction chamber；
Being positioned at the pedestal bottom reaction chamber, described pedestal is suitable to rotate around central shaft, and described pedestal includes wafer area, and the surface, wafer area of described pedestal is used for placing wafer；
It is positioned at the exhaust passage bottom reaction chamber；
Gas spray as described in any one of claim 1 to 18, the lower surface of described coldplate is relative with described base-plates surface.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410838723.9A CN105779970B (en) | 2014-12-26 | Gas spray and precipitation equipment | |
| TW104128014A TW201623681A (en) | 2014-12-26 | 2015-08-26 | Gas spraying head and deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410838723.9A CN105779970B (en) | 2014-12-26 | Gas spray and precipitation equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105779970A true CN105779970A (en) | 2016-07-20 |
| CN105779970B CN105779970B (en) | 2018-02-09 |
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| WO2023246522A1 (en) * | 2022-06-23 | 2023-12-28 | 北京北方华创微电子装备有限公司 | Gas distribution apparatus and semiconductor process equipment |
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Also Published As
| Publication number | Publication date |
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| TW201623681A (en) | 2016-07-01 |
| TWI563115B (en) | 2016-12-21 |
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Application publication date: 20160720 Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of invention: Gas spraying head and deposition device Granted publication date: 20180209 License type: Exclusive License Record date: 20181217 |
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