CN105762138B - Integrated millimeter wave chip-packaging structure - Google Patents
Integrated millimeter wave chip-packaging structure Download PDFInfo
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- CN105762138B CN105762138B CN201410778230.0A CN201410778230A CN105762138B CN 105762138 B CN105762138 B CN 105762138B CN 201410778230 A CN201410778230 A CN 201410778230A CN 105762138 B CN105762138 B CN 105762138B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- Details Of Aerials (AREA)
Abstract
The present invention discloses a kind of integrated millimeter wave chip-packaging structure, it may include intermediary layer structure, millimeter wave chip and substrate.The intermediary layer structure includes an antenna pattern and an at least electroplating ventilating hole structure through the intermediary layer structure and is connected to the antenna pattern.The millimeter wave chip is electrically connected the antenna pattern above or below it by electroplating ventilating hole structure.
Description
Technical field
It is to be related to a kind of integrated millimeter wave chip-packaging structure the present invention relates to a kind of encapsulating structure.
Background technique
Applying for wireless receiver becomes focus in the consumer electronics show of the U.S. Jin Liangnian, declares wireless gigabit alliance
The epoch of (Wireless Gigabit Alliance, WiGi) and wireless high image quality (Wireless HD) standard application arrive.
Domestic and international educational circles and big factory also develop the chip of millimeter wave frequency band successively；However, but there has been no complete for the encapsulation of this frequency range chip
Whole solution.
General routing (Wire-bond) encapsulation is not suitable for radio frequency chip encapsulation, and uses low temperature co-fired multi-layer ceramics
(Low-Temperature Co-fired Ceramics, LTCC) and flip-chip packaged, then because technological process causes substrate to be received
It contracts and manufacture craft efficiency is insufficient, in addition institute's chip pad size for package and spacing are too small, cause assembling yield too low.Cause
This, pole need to provide a kind of encapsulating structure that can effectively integrate radio frequency chip and antenna at present.
Summary of the invention
It is an object of the invention to can provide a kind of encapsulating structure that can effectively integrate radio frequency chip and antenna, vertical integration
The encapsulation of antenna and rfic chip, the antenna that design is located at different layers are vertical right up and down with the position of radio frequency chip
It answers, transmission range between the two is minimized, reduce high-frequency signal caused by transmission path between antenna and radio frequency chip and be lost.
In order to achieve the above object, including at least intermediary layer the present invention can provide a kind of integrated millimeter wave chip-packaging structure
Structure, chip and substrate.The intermediary layer structure include the first metal layer, second metal layer, be located at first, second metal layer it
Between insulation support layer, and the intermediary layer structure includes at least one first electroplating ventilating hole structure, which passes through
The first metal layer, the insulation support layer and the second metal layer are worn, and is electrically connected the first metal layer and second gold medal
Belong to layer.The chip is linked to the intermediary layer structure, which has active face and the engagement pad on the active face.The base
Plate is linked to the intermediary layer structure.The substrate includes at least an insulating layer and the third metal layer on insulating layer, the third
Metal layer is located at the substrate towards the side of the intermediary layer structure, and the first metal layer of the intermediary layer structure includes at least one day
Line pattern, the antenna pattern are located at the top of the chip, which passes through the first electroplating ventilating hole structure of the intermediary layer structure
It is electrically connected the antenna pattern.In another embodiment, which may be provided at lower section.
In one embodiment of this invention, the substrate in above-mentioned integrated millimeter wave chip-packaging structure has
Female bug hole, the chip buried-in in the up concave type bug hole and the active face of the chip towards the intermediary layer structure second gold medal
Belong to layer, which is linked to the intermediary layer structure by the way that the convex block between the engagement pad and the second metal layer is physical,
And the chip is electrically connected the antenna pattern by the convex block and the first electroplating ventilating hole structure.
In another embodiment of the invention, the substrate in above-mentioned integrated millimeter wave chip-packaging structure has one
Opening exposes the chip, and the active face of the chip is towards the second metal layer of the intermediary layer structure, and the chip is by being located at
Convex block between the engagement pad and the second metal layer is physical to be linked to the intermediary layer structure, and the chip passes through the convex block
And the first electroplating ventilating hole structure is electrically connected the antenna pattern.
In one embodiment of this invention, the substrate in above-mentioned integrated millimeter wave chip-packaging structure further includes
Four metal layers and the second electroplating ventilating hole structure, the 4th metal layer are located at the insulating layer relative to the another of the third metal layer
Face, the second electroplating ventilating hole structure connect third metal layer and the 4th metal of the insulating layer two sides through the substrate
Layer.
In one embodiment of this invention, above-mentioned integrated millimeter wave chip-packaging structure further includes another substrate connection
To the substrate, which includes the soldered ball being placed between the substrate and another substrate, which passes through the soldered ball
Make the substrate and the physical connection of another substrate and is electrical connected.
In one embodiment of this invention, the intermediary layer structure in above-mentioned integrated millimeter wave chip-packaging structure is also
Including one layer or more wiring layer, it is located among the insulation support layer and between the antenna pattern and the second metal layer.
In one embodiment of this invention, the chip in above-mentioned integrated millimeter wave chip-packaging structure is radio frequency core
Piece.
Based on above-mentioned, the present invention configures antenna pattern above or below chip, recycle in buried via hole and via hole
Electrically connected antenna and chip, and then can be reduced by the encapsulation of this vertical encapsulation architecture integral antenna and chip
Signal transmission distance between antenna and chip achievees the purpose that reduce signal transmission attenuation.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is attached appended by cooperation
Figure is described in detail below.
Detailed description of the invention
Fig. 1 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of one embodiment of the invention；
Fig. 2 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 3 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 4 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 5 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 6 is a kind of diagrammatic cross-section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 7 is a kind of partial top schematic diagram of integrated millimeter wave chip-packaging structure of one embodiment of the invention；
Fig. 8 is the partial top schematic diagram of another millimeter wave chip-packaging structure；
Fig. 9 is guide wavelength (Guide Wavelength) figure of millimeter wave antenna gain to conducting hole length；
Figure 10 is millimeter wave antenna radiation efficiency frequency response chart.
Symbol description
10,20,30,40,50,60: encapsulating structure
100,400: intermediary layer structure
102: the first metal layer
104: second metal layer
106,406: insulation support layer
108,408: wiring layer
109,409: metal filling perforation structure
110,110A: antenna pattern
112,114,214,218,302: weld pad
120,220,420: electroplating ventilating hole structure
140: mucigel
150: millimeter wave chip
150a: active face
152: engagement pad
160,230: convex block
180: wiring
200,200A, 200B, 300: substrate
202: up concave type bug hole
203: opening
210: insulating layer
212: third metal layer
216: the four metal layers
310: soldered ball
402: upper metal layer
404: lower metal layer
Specific embodiment
Millimeter wave refers to the electric wave that wavelength is 1~10 millimeter of range, if being converted into frequency, about in 30G~300GHz range；
Therefore, millimeter wave chip namely refers to wavelength in the rf chip of millimeter wave range.It is similar or identical in following embodiments
It will be given the same reference numerals in element, part or structure.Sequence or upper inferior description in its text be to facilitate understand but simultaneously
It is non-to limit its relative position or range.
Fig. 1 is the diagrammatic cross-section according to a kind of integrated millimeter wave chip-packaging structure of one embodiment of the invention.
With reference to Fig. 1, integrated millimeter wave chip-packaging structure 10, including intermediary layer structure 100, millimeter wave chip 150 with
Substrate 200.Intermediary layer structure 100 includes the first metal layer 102, second metal layer 104, is located at first, second metal layer
An insulation support layer 106 and an at least electroplating ventilating hole structure (plated through hole) 120 between 102/104.It should
Electroplating ventilating hole structure 120 (through the first metal layer 102, the insulation support layer 106 and is somebody's turn to do through the intermediary layer structure 100
Second metal layer 104), it is electrically connected the first metal layer 102 and the second metal layer 104.The first metal layer 102 at least wraps
Include an antenna pattern 110.And the second metal layer 104 can be for a line layer and including multiple weld pads 112 and weld pad 114.Plating
The generation type of through-hole structure 120 includes that first etching or laser drill form through hole re-plating and form electroplating ventilating hole structure to reach
At.
It is compared to encapsulating structure and connects antenna pattern using conducting wire or wiring, the integrated millimeter wave chip envelope of the present invention
Assembling structure can be connected using electroplating ventilating hole structure (that is, via hole) come electrically connected antenna pattern, that is, in a manner of via hole
And signal is fed into antenna.
Referring to Fig. 1, which further includes a wiring layer 108 and a metal filling perforation structure 109, the wiring
Layer 108 is located among the insulation support layer 106 and between the antenna pattern 110 and second metal layer 104, which fills out
Pore structure 109 is located between the wiring layer 108 and the weld pad 114 and is electrically connected the wiring layer 108 and the weld pad 114.Wherein should
Wiring layer 108 is not connect with the electroplating ventilating hole structure 120.The wiring layer 108 can also have shielding as ground plane, ground plane
Function, to protect millimeter wave chip 150 to avoid by more electromagnetic interferences (EMI), and undeservedly influence of the invention whole
The operation of box-like millimeter wave chip-packaging structure.The present invention, which does not limit wiring layer, can be multi-layer configuration as single layer, by more
The configuration of multiple wiring layer can help encapsulating structure integration more multicomponent or keep the wiring of encapsulating structure more flexible.
The substrate 200 includes at least an insulating layer 210 and the third metal layer 212 on insulating layer 210, third gold
Belong to layer 212 and is located at the substrate 200 towards the side of the second metal layer 104 and including multiple weld pads 214.The substrate 200 has
One up concave type bug hole 202, and be embedded in the millimeter wave chip 150 in the up concave type bug hole 202 and sticked by a mucigel 140
It is fixed in the depression of the substrate 200 or mucigel 140 is replaced with air.The millimeter wave chip 150 has an active face 150a
And the engagement pad 152 on active face 150a, and be embedded in the millimeter wave chip 150 in the up concave type bug hole 202, but its
Active face 150a is towards the second metal layer 104 of the intermediary layer structure 100, and the millimeter wave chip 150 is by being located at the second metal
Convex block 160 or tin ball or gold goal between layer 104 and engagement pad 152, be electrically connected the chip engagement pad 152 and this second
Metal layer 104 (weld pad 112).In addition, the antenna pattern 110 by the electroplating ventilating hole structure 120 and convex block 160 (weld pad 112 with
Engagement pad 152), and it is electrically connected the antenna pattern 110 and the millimeter wave chip 150.Herein, which is, for example, a printing
Circuit board or ceramic substrate.
With reference to Fig. 1, which can be located at the top of the millimeter wave chip 150.Herein, whether described in the text
Top or lower section hold depending on the placement direction of this encapsulating structure, but do not interfere the understanding of this field person, mainly should
The aligned in position that the position of antenna pattern need to be configured with chip, the pattern distributed areas of the substantially antenna pattern 110 should be equal to
Or the size greater than its lower chip, but the two position is corresponding completely or partially.
With reference to Fig. 1, which coincides on the substrate 200, and the intermediary layer structure 100 is by being located at second
Convex block 230 or tin ball or gold goal between metal layer 104 (weld pad 114) and third metal layer 212 (weld pad 214), and be electrically connected
Second metal layer 104 and third metal layer 212.It can further include a primer layer between the intermediary layer structure 100 and the substrate 200
130, help the two and the fixation between convex block.That is, millimeter wave chip 150 and substrate 200 are by being located at second metal layer
Convex block 160 between 104 weld pad 114 and chip and the convex block between second metal layer 104 and third metal layer 212
230 reach electrical connection.
Therefore, antenna pattern 110 is configured at millimeter wave chip by integrated millimeter wave chip-packaging structure 10 shown in FIG. 1
150 top, and the antenna pattern 110 and the millimeter wave chip 150 are electrically connected by electroplating ventilating hole structure 120, and hang down
Straight integrated millimeter wave chip-packaging structure 10 greatly shortens antenna pattern 110 and the millimeter wave in the case where being not necessarily to routing
Signal transmission distance between chip 150.
Fig. 2 is illustrated according to a kind of section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention
Figure.Referring to fig. 2, integrated millimeter wave chip-packaging structure 20, including intermediary layer structure 100, millimeter wave chip 150, substrate
200A and substrate 300.Herein, other than identical intermediary layer structure 100,200 phase of substrate of substrate 200A and Fig. 1 of Fig. 2
When similar, but substrate 200A includes insulating layer 210 and quartile in the third metal layer 212 and the 4th metal on 210 two sides of insulating layer
Layer 216.The third metal layer 212 includes multiple weld pads 214, and the 4th metal layer 216 includes multiple weld pads 218.In addition, base
Plate 200A further includes third metal layer 212 of the electroplating ventilating hole structure 220 through substrate 200A and connection 210 two sides of insulating layer
With the 4th metal layer 216.
The substrate 300 includes the soldered ball 310 being arranged on weld pad 302, and the substrate 300 is by being arranged on weld pad 302
The weld pad 218 of soldered ball 310 and substrate 200A, and make the physical connection of substrate 200A and the substrate 300 and be electrical connected.
Herein, substrate 200A is, for example, a bearing substrate, and the substrate 300 be a printed circuit board, therefore by convex block 160,230 with
Soldered ball 310 can further make millimeter wave chip 150 be electrically connected to printed circuit board.
Fig. 3 is illustrated according to a kind of section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention
Figure.Referring to Fig. 3, integrated millimeter wave chip-packaging structure 30, including intermediary layer structure 100, millimeter wave chip 150, substrate
200B and substrate 300.Herein, substrate 200B and the substrate 200A of Fig. 2 are quite similar, although substrate 200A has a up concave type
Bug hole, but then there is substrate 200B an opening 203 to expose the millimeter wave chip 150, and the millimeter wave chip 150 is by being located at second
Convex block 160 between metal layer 104 and chip contact pad 152, and reach physical bonds with intermediary layer structure 100.Integrated milli
Antenna pattern 110 is configured at the top of millimeter wave chip 150 by metric wave chip-packaging structure 30, and passes through electroplating ventilating hole structure
120 and be electrically connected the antenna pattern 110 and the millimeter wave chip 150, and vertical integration formula millimeter wave chip-packaging structure 30, contracting
Signal transmission distance between short antenna pattern 110 and the millimeter wave chip 150.
Fig. 4 is illustrated according to a kind of section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention
Figure.Referring to fig. 4, integrated millimeter wave chip-packaging structure 40, including intermediary layer structure 100, millimeter wave chip 150, substrate 200
With another intermediary layer structure 400.Herein, other than intermediary layer structure 100 identical with Fig. 1 and substrate 200, the millimeter wave of Fig. 4
Chip-packaging structure 40 includes that another intermediary layer structure 400 is located between the substrate 200 and the intermediary layer structure 100, the intermediary
Layer structure 400 is simultaneously linked with the substrate 200 above and below convex block 160,230 and its with the intermediary layer structure 100.The intermediary layer structure
400 is quite similar with the intermediary layer structure 100 of Fig. 1, the intermediary layer structure 400 include upper metal layer 402, lower metal layer 404,
Insulation support layer 406, wiring layer 408, metal filling perforation structure 409 and at least one electroplating ventilating hole structure 420 between being located at.It should
The upper metal layer 402 of intermediary layer structure 400 can be line layer, but can also further include an antenna pattern, and end is set depending on product
Depending on meter.And lower metal layer 404 can be for a line layer and including multiple weld pads.The intermediary layer structure 400 passes through convex block 160,230
It is electrically connected intermediary layer structure 100, millimeter wave chip 150 and substrate 200.Collocation convex block 160 and metal filling perforation structure 409, day
Line pattern 110 is electrical connected by electroplating ventilating hole structure 120,420 with millimeter wave chip 150.The millimeter wave chip package of Fig. 4
Structure 40 includes another intermediary layer structure 400 can be with integrated passive element or antenna pattern or matching network into encapsulating structure.
Fig. 5 is illustrated according to a kind of section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention
Figure.Referring to Fig. 5, integrated millimeter wave chip-packaging structure 50, including intermediary layer structure 100, millimeter wave chip 150, substrate
200A, substrate 300 and another intermediary layer structure 400.Herein, integrated millimeter wave chip-packaging structure 50 and integrated millimeter wave
Chip-packaging structure 20 is rather similar, in addition to integrated millimeter wave chip-packaging structure 50 includes 400, another intermediary layer structure
Between substrate 200A and the intermediary layer structure 100, the intermediary layer structure 400 and with convex block 160,230 and its above and below should
Substrate 200A and the intermediary layer structure 100 link.Similarly, the substrate 300 is by the soldered ball 310 that is arranged on weld pad 302, and
Make the physical connection of substrate 200A and the substrate 300 and is electrical connected.Herein, substrate 200A is, for example, a bearing substrate,
And the substrate 300 is a printed circuit board, therefore can further make millimeter wave chip 150 electric by convex block 160,230 and soldered ball 310
It is connected to printed circuit board.
Fig. 6 is illustrated according to a kind of section of integrated millimeter wave chip-packaging structure of another embodiment of the present invention
Figure.Referring to Fig. 6, integrated millimeter wave chip-packaging structure 60, including intermediary layer structure 100, millimeter wave chip 150, substrate
200B, substrate 300 and another intermediary layer structure 400.Herein, integrated millimeter wave chip-packaging structure 60 and integrated millimeter wave
Chip-packaging structure 50 is rather similar, but although the substrate 200A of millimeter wave chip-packaging structure 50 has a up concave type brilliant
Cave, but there is the substrate 200B of millimeter wave chip-packaging structure 60 opening 203 to expose the millimeter wave chip 150, the millimeter wave
Chip 150 reaches physical bonds by convex block 160 and intermediary layer structure 400.Integrated millimeter wave chip-packaging structure 60 will
Antenna pattern 110 is configured at the top of millimeter wave chip 150, collocation convex block 160 and electroplating ventilating hole structure 120,420 and be electrically connected
The antenna pattern 110 and the millimeter wave chip 150, therefore vertical integration formula millimeter wave chip-packaging structure 60.
The integrated millimeter wave chip-packaging structure of Fig. 7 can be considered as the portion of the antenna pattern 110 for Fig. 1 or Fig. 3
Divide schematic top plan view.Referring to Fig. 7, antenna pattern 110 is directly connected to electroplating ventilating hole structure 120, adopts vertical feed-in mode, therefore shape
It is smaller at layout area needed for antenna pattern.
Fig. 8 is the schematic top plan view of another millimeter wave chip-packaging structure.Antenna pattern 110 and electricity relative to Fig. 7
Plated-through-hole structure 120 is directly connected to, the antenna pattern 110A of Fig. 8, can still be arranged in pairs or groups using wiring 180 and be reached from side to feed-in
At electrical connection.
In foregoing embodiments of the invention, although only showing a chip or single a antenna pattern, this
The range of invention is not limited to this, and multiple chips or mutiple antennas pattern can be configured in integrated encapsulating structure.And those realities
Apply in example, millimeter wave chip 150 can be radio frequency chip, first, second, third or the 4th the materials such as metal layer may include for aluminium,
Copper, nickel, gold with or the metals such as silver.The antenna pattern can be radio-frequency antenna pattern, e.g. microstrip-type antenna (patch
Antenna), the preferably antenna pattern of 60GHz frequency band.
Integrated millimeter wave chip-packaging structure utilizes the intermediary layer knot with electroplating ventilating hole structure in the embodiment of the present invention
Structure, and make thereon antenna pattern be electrically connected with chip, connect antenna using wiring or conducting wire feed-in mode it is therefore not necessary to arrange in pairs or groups
Pattern, and make layout area needed for forming antenna pattern smaller, achieve the purpose that save layout area.
In conclusion the mode of electroplating ventilating hole structure (via hole) can be used to be electrically connected and FD feed to day for the present invention
Line.Compared to antenna pattern is connected using conducting wire or wiring, the embodiment of the present invention uses electroplating ventilating hole structure (via hole)
Mode be electrically connected with FD feed to antenna, therefore the area of substrate occupied by antenna is smaller.Fig. 9 is millimeter wave 60GHz micro-strip
Formula antenna gain is to the effective wavelength figure of conducting hole length, and the conducting hole length of antenna is between 1/8th guide wavelengths to 16
Between/mono- guide wavelength.Structure according to an embodiment of the present invention, the length of via hole are about 1/11st guide wavelength
When, antenna gain 6.3dBi, benefit is preferable.Figure 10 is millimeter wave antenna radiation efficiency frequency response chart.It is used according to collocation
Chip and product design electrical requirements, with guide wavelength be D from the point of view of, the length of via hole may be designed as collocation guide wavelength D
1/11st, that is, D/11.As shown in Figure 10, in 60GHz, the antenna gain using conduction band line feed-in mode is
6.1dBi, antenna radiation efficiency 80% (shown in dotted line)；And use via hole feed-in mode (length of via hole about D/11)
Antenna gain is 6.3dBi, and radiation efficiency 83% (shown in solid) improves antenna performance really.
The present invention can reduce the integral thickness of encapsulating structure by chip buried-in in up concave type or ostiolate substrate.Separately
Outside, relative to the encapsulating structure using conducting wire or wire laying mode connection antenna, this case chip arranges in pairs or groups perforation conducting structure to connect
Antenna pattern, can reduce area needed for antenna arrangement, not undermine even enhancing antenna performance, the present invention really effectively penetrate by integration
Frequency chip and antenna pattern reach in encapsulating structure and reduce millimeter wave power consume, promote package module efficiency.Due to this case
By the way that antenna pattern to be configured above or below chip allocation position in embodiment, and by plating through-hole structure come
Electrically connected antenna pattern and chip, and signal transmission path is shortened and reduces high-frequency signal loss.
Although disclosing the present invention in conjunction with above embodiments, it is not intended to limit the invention, any affiliated technology
Have usually intellectual in field, without departing from the spirit and scope of the present invention, can make some changes and embellishment, therefore this hair
Bright protection scope should be subject to what the appended claims were defined.
Claims (15)
1. a kind of integrated millimeter wave chip-packaging structure, comprising:
Intermediary layer structure, wherein the intermediary layer structure includes the first metal layer, second metal layer, is located at first, second metal
Layer between insulation support layer, and the intermediary layer structure include at least one first electroplating ventilating hole structure, through the first metal layer,
The insulation support layer and the second metal layer, and it is electrically connected the first metal layer and the second metal layer；
An at least chip is linked to the intermediary layer structure, and wherein the chip has active face and connecing on the active face
Touch pad；And
Substrate is linked to the intermediary layer structure, and wherein the substrate includes at least an insulating layer and the third gold on insulating layer
Belong to layer, which is located at the substrate towards the side of the intermediary layer structure；The first metal layer of the intermediary layer structure
Including at least an antenna pattern, which is located above or below the chip, which passes through the intermediary layer structure
The first electroplating ventilating hole structure is electrically connected the antenna pattern, and the chip by the second metal layer and is located at the substrate
Convex block between the second metal layer and the third metal layer, which reaches, to be electrically connected.
2. integrated millimeter wave chip-packaging structure as described in claim 1, wherein the substrate has up concave type bug hole, the core
Be embedded in the up concave type bug hole in piece and the active face of the chip towards the second metal layer of the intermediary layer structure, the chip is logical
The convex block crossed between the engagement pad and the second metal layer is physical to be linked to the intermediary layer structure, and the chip passes through
The convex block and the first electroplating ventilating hole structure are electrically connected the antenna pattern.
3. integrated millimeter wave chip-packaging structure as described in claim 1, wherein the substrate has opening, exposes the core
Piece, the active face of the chip is towards the second metal layer of the intermediary layer structure, and the chip is by being located at the engagement pad and being somebody's turn to do
Convex block between second metal layer is physical to be linked to the intermediary layer structure, and the chip passes through the convex block and first electricity
Plated-through-hole structure is electrically connected the antenna pattern.
4. integrated millimeter wave chip-packaging structure as claimed in claim 2, the wherein integrated millimeter wave chip package knot
The substrate of structure further includes the 4th metal layer and the second electroplating ventilating hole structure, and the 4th metal layer is located at the insulating layer relative to this
The another side of third metal layer, the second electroplating ventilating hole structure connect the third metal of the insulating layer two sides through the substrate
Layer and the 4th metal layer.
5. integrated millimeter wave chip-packaging structure as claimed in claim 3, the wherein integrated millimeter wave chip package knot
The substrate of structure further includes the 4th metal layer and the second electroplating ventilating hole structure, and the 4th metal layer is located at the insulating layer relative to this
The another side of third metal layer, the second electroplating ventilating hole structure connect the third metal of the insulating layer two sides through the substrate
Layer and the 4th metal layer.
6. integrated millimeter wave chip-packaging structure as claimed in claim 4, the wherein integrated millimeter wave chip package knot
Structure further includes that another substrate is linked to the substrate, which includes the soldered ball being placed between the substrate and another substrate,
Another substrate makes the substrate and the physical connection of another substrate by the soldered ball and is electrical connected.
7. integrated millimeter wave chip-packaging structure as claimed in claim 5, the wherein integrated millimeter wave chip package knot
Structure further includes that another substrate is linked to the substrate, which includes the soldered ball being placed between the substrate and another substrate,
Another substrate makes the substrate and the physical connection of another substrate by the soldered ball and is electrical connected.
8. integrated millimeter wave chip-packaging structure as claimed in claim 2, the wherein integrated millimeter wave chip package knot
Structure further includes another intermediary layer structure and multiple convex blocks, which includes that an at least third electroplating ventilating hole structure is passed through
Another intermediary layer structure is worn, which is located between the chip and the intermediary layer structure, and the chip passes through
Those convex blocks are linked to another intermediary layer structure, which passes through those convex blocks again and be linked to the intermediary layer knot
Structure makes the chip, the intermediary layer structure and another intermediary layer knot by those convex blocks and first, the third electroplating ventilating hole structure
Structure is physical to be linked and is electrical connected.
9. integrated millimeter wave chip-packaging structure as claimed in claim 3, the wherein integrated millimeter wave chip package knot
Structure further includes another intermediary layer structure and multiple convex blocks, which includes that an at least third electroplating ventilating hole structure is passed through
Another intermediary layer structure is worn, which is located between the chip and the intermediary layer structure, and the chip passes through
Those convex blocks are linked to another intermediary layer structure, which passes through those convex blocks again and be linked to the intermediary layer knot
Structure makes the chip, the intermediary layer structure and another intermediary layer knot by those convex blocks and first, the third electroplating ventilating hole structure
Structure is physical to be linked and is electrical connected.
10. integrated millimeter wave chip-packaging structure as claimed in claim 8, the wherein integrated millimeter wave chip package knot
The substrate of structure further includes the 4th metal layer and the second electroplating ventilating hole structure, and the 4th metal layer is located at the insulating layer relative to this
The another side of third metal layer, the electroplating ventilating hole structure through the substrate connect the third metal layers of the insulating layer two sides with
4th metal layer.
11. integrated millimeter wave chip-packaging structure as claimed in claim 9, the wherein integrated millimeter wave chip package knot
The substrate of structure further includes the 4th metal layer and the second electroplating ventilating hole structure, and the 4th metal layer is located at the insulating layer relative to this
The another side of third metal layer, the electroplating ventilating hole structure through the substrate connect the third metal layers of the insulating layer two sides with
4th metal layer.
12. integrated millimeter wave chip-packaging structure as claimed in claim 10, the wherein integrated millimeter wave chip package
Structure further includes that another substrate is linked to the substrate, which includes the weldering being arranged between the substrate and another substrate
Ball, another substrate make the substrate and the physical connection of another substrate by the soldered ball and are electrical connected.
13. integrated millimeter wave chip-packaging structure as claimed in claim 11, the wherein integrated millimeter wave chip package
Structure further includes that another substrate is linked to the substrate, which includes the weldering being arranged between the substrate and another substrate
Ball, another substrate make the substrate and the physical connection of another substrate by the soldered ball and are electrical connected.
14. integrated millimeter wave chip-packaging structure as described in claim 1, wherein the intermediary layer structure further includes a wiring
Layer is located among the insulation support layer and between the antenna pattern and the second metal layer, which is ground connection
Layer.
15. integrated millimeter wave chip-packaging structure as described in claim 1, wherein the chip is radio frequency chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410778230.0A CN105762138B (en) | 2014-12-15 | 2014-12-15 | Integrated millimeter wave chip-packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410778230.0A CN105762138B (en) | 2014-12-15 | 2014-12-15 | Integrated millimeter wave chip-packaging structure |
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| CN105762138A CN105762138A (en) | 2016-07-13 |
| CN105762138B true CN105762138B (en) | 2019-01-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6360264B2 (en) * | 2016-07-22 | 2018-07-18 | 京セラ株式会社 | RFID tag substrate, RFID tag and RFID system |
| US10128192B2 (en) * | 2016-07-22 | 2018-11-13 | Mediatek Inc. | Fan-out package structure |
| CN106485311A (en) * | 2016-09-13 | 2017-03-08 | 上海商格信息科技有限公司 | A kind of novel electronic label production technology |
| TWI624113B (en) * | 2016-11-03 | 2018-05-11 | 矽品精密工業股份有限公司 | Electronic module |
| TWI670824B (en) | 2018-03-09 | 2019-09-01 | 欣興電子股份有限公司 | Package structure |
| CN110265384B (en) * | 2018-03-12 | 2021-07-16 | 欣兴电子股份有限公司 | Packaging structure |
| CN109888454B (en) * | 2018-12-29 | 2021-06-11 | 瑞声精密制造科技(常州)有限公司 | Packaged antenna module and electronic equipment |
| CN109638459B (en) * | 2018-12-29 | 2021-07-09 | 瑞声科技（南京）有限公司 | Packaged antenna module and electronic equipment |
| WO2020133499A1 (en) * | 2018-12-29 | 2020-07-02 | 瑞声科技（南京）有限公司 | Antenna-in-package module and electronic device |
| WO2020133496A1 (en) * | 2018-12-29 | 2020-07-02 | 瑞声科技（南京）有限公司 | Packaged antenna module and electronic device |
| CN110783685B (en) * | 2019-10-30 | 2021-08-17 | 深圳捷豹电波科技有限公司 | Millimeter wave antenna and millimeter wave antenna process design |
| CN113871355A (en) * | 2020-06-30 | 2021-12-31 | 华为技术有限公司 | Packaging structure, electronic equipment and preparation method of packaging structure |
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| CN1406455A (en) * | 2000-02-25 | 2003-03-26 | 揖斐电株式会社 | Multilayer printed wiring board and method ofr producing multilayer printed wiring board |
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| DE10300955B4 (en) * | 2003-01-13 | 2005-10-27 | Epcos Ag | Radar transceiver for microwave and millimeter wave applications |
| US9837701B2 (en) * | 2013-03-04 | 2017-12-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package including antenna substrate and manufacturing method thereof |
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| CN1406455A (en) * | 2000-02-25 | 2003-03-26 | 揖斐电株式会社 | Multilayer printed wiring board and method ofr producing multilayer printed wiring board |
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