TWI557854B - Integrated millimeter-wave chip package - Google Patents

Description

Integrated millimeter wave chip package structure

The present invention relates to a package structure relating to an integrated millimeter wave chip package structure.

The application of wireless receivers has become the focus of the Consumer Electronics Show in the past two years, and the era of wireless Gigabit Alliance (WiGi) and wireless HD (HD) standard applications is coming. Domestic and foreign academic circles and large manufacturers have also developed wafers in the millimeter wave band; however, there is no complete solution for the packaging of this band of chips.

The wire-bond package is not suitable for RF chip packaging. Low-Temperature Co-fired Ceramics (LTCC) and flip-chip packages are used to shrink the substrate due to process conditions and the process performance is insufficient. In addition, the size and spacing of the wafer pads to be packaged are too small, resulting in low assembly yield. Therefore, it is highly desirable to provide a package structure that can effectively integrate RF chips and antennas.

The invention can provide a package structure capable of effectively integrating a radio frequency chip and an antenna, vertically integrating the antenna and the package of the RF integrated circuit chip, and designing the antennas at different layers to vertically correspond to the position of the RF chip, and the transmission distance between the two Minimize and reduce the high frequency signal loss caused by the transmission path between the antenna and the RF chip.

The invention can provide an integrated millimeter wave chip package structure comprising at least an interposer structure, a wafer and a substrate. The interposer structure includes a first metal layer, a second metal layer, an insulating support layer between the first and second metal layers, and the interposer structure includes at least one first plated through hole structure, the first plating The via structure extends through the first metal layer, the insulating support layer, and the second metal layer, and electrically connects the first metal layer and the second metal layer. The wafer is bonded to the interposer structure, the wafer having an active surface and contact pads on the active surface. The substrate is bonded to the interposer structure. The substrate includes at least an insulating layer and a third metal layer on the insulating layer, the third metal layer is located on a side of the substrate facing the interposer structure, and the first metal layer of the interposer structure includes at least one antenna pattern The antenna pattern is located above the wafer, and the wafer is electrically connected to the antenna pattern through the first plated through hole structure of the interposer structure. In another embodiment, the antenna pattern can be disposed below.

In an embodiment of the present invention, the substrate in the integrated millimeter wave chip package structure has a concave cavity, and the wafer is buried in the concave cavity and the active surface of the wafer faces the intermediary. The second metal layer of the layer structure, the wafer is physically coupled to the bump through the bump between the contact pad and the second metal layer a via structure, and the wafer electrically connects the antenna pattern through the bump and the first plated through hole structure.

In another embodiment of the present invention, the substrate in the integrated millimeter wave chip package structure has an opening exposing the wafer, the active surface of the wafer facing the second metal layer of the interposer structure, the wafer The interposer is physically coupled to the interposer structure through a bump between the contact pad and the second metal layer, and the wafer is electrically connected to the antenna pattern through the bump and the first plated through hole structure.

In an embodiment of the present invention, the substrate in the integrated millimeter wave chip package structure further includes a fourth metal layer and a second plated through hole structure, wherein the fourth metal layer is located at the insulating layer relative to the third On the other side of the metal layer, the second plated through hole structure penetrates the substrate to connect the third metal layer and the fourth metal layer on both sides of the insulating layer.

In an embodiment of the invention, the integrated millimeter wave chip package structure further includes another substrate coupled to the substrate, the other substrate including a solder ball disposed between the substrate and the other substrate, the other A substrate is physically and electrically connected to the other substrate through the solder ball.

In an embodiment of the present invention, the interposer structure in the integrated millimeter wave chip package structure further includes one or more wiring layers, located in the insulating support layer and located in the antenna pattern and the second metal layer. between.

In an embodiment of the invention, the wafer in the integrated millimeter wave chip package structure is a radio frequency wafer.

Based on the above, the present invention arranges the antenna pattern above or below the wafer Then, the embedded hole and the via hole are electrically connected to the antenna and the chip, thereby integrating the antenna and the package of the chip by the vertical package structure, thereby reducing the signal transmission distance between the antenna and the chip, thereby reducing signal transmission. The purpose of loss.

The above described features and advantages of the invention will be apparent from the following description.

10, 20, 30, 40, 50, 60‧‧‧ package structure

100, 400‧‧‧Intermediary structure

102‧‧‧First metal layer

104‧‧‧Second metal layer

106, 406‧‧ ‧ insulating support layer

108, 408‧‧‧ wiring layer

109, 409‧‧‧Metal hole filling structure

110, 110A‧‧‧ antenna pattern

112, 114, 214, 218, 302‧‧ ‧ pads

120, 220, 420‧‧‧ plated through hole structure

130‧‧‧Under layer

140‧‧‧Adhesive layer

150‧‧‧ millimeter wave wafer

150a‧‧‧ active face

152‧‧‧Contact pads

160, 230‧‧ ‧ bumps

180‧‧‧Wiring

200, 200A, 200B, 300‧‧‧ substrates

202‧‧‧ concave concave hole

203‧‧‧ openings

210‧‧‧Insulation

212‧‧‧ Third metal layer

216‧‧‧ fourth metal layer

310‧‧‧ solder balls

402‧‧‧Upper metal layer

404‧‧‧Under metal layer

1 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with an embodiment of the present invention.

2 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention.

3 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with yet another embodiment of the present invention.

4 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention.

5 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention.

6 is a cross-sectional view showing an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention.

7 is a partial top plan view of an integrated millimeter wave chip package structure in accordance with an embodiment of the present invention.

Figure 8 is a partial top plan view of another millimeter wave chip package structure.

Figure 9 is a diagram showing the Guide Wavelength of the millimeter wave antenna gain versus the via length.

Figure 10 is a graph showing the frequency response of the millimeter wave antenna radiation efficiency.

The millimeter wave refers to a wave with a wavelength of 1 to 10 mm. If it is converted into a frequency, it is in the range of 30 G to 300 GHz. Therefore, the millimeter wave chip refers to a radio frequency transmitting and receiving chip having a wavelength in the millimeter wave range. Similar or identical elements, parts or structures in the following embodiments will be denoted by the same reference numerals. The order of the text or the above and below descriptions are used to facilitate understanding but not to limit their relative positions or ranges.

1 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with an embodiment of the present invention.

Referring to FIG. 1, an integrated millimeter wave chip package structure 10 includes an interposer structure 100, a millimeter wave wafer 150, and a substrate 200. The interposer structure 100 includes a first metal layer 102, a second metal layer 104, an insulating support layer 106 between the first and second metal layers 102/104, and at least one plated through hole 120. . The plated through hole structure 120 is electrically connected to the first metal layer 102 and the second metal layer. 104. The first metal layer 102 includes at least one antenna pattern 110. The second metal layer 104 can be a circuit layer and includes a plurality of pads 112 and pads 114. The formation of the plated through hole structure 120 includes etching The engraved or laser drilled hole is formed into a through hole and then plated to form a plated through hole structure.

Compared with the package structure, the antenna pattern is connected by wires or wires. The integrated millimeter wave chip package structure of the present invention can electrically connect the antenna patterns by using a plated through hole structure (ie, a via hole), that is, the via holes are connected and Feed the signal to the antenna.

Referring to FIG. 1, the interposer structure 100 further includes a wiring layer 108 and a metal via structure 109. The wiring layer 108 is located in the insulating support layer 106 and between the antenna pattern 110 and the second metal layer 104. The metal via structure 109 is located between the wiring layer 108 and the pad 114 to electrically connect the wiring layer 108 and the pad 114 . The wiring layer 108 is not connected to the plated through hole structure 120. The wiring layer 108 can be used as a ground layer, and the ground layer can also have a shielding function to protect the millimeter wave wafer 150 from excessive electromagnetic interference (EMI), thereby unduly affecting the integrated millimeter wave chip package structure of the present invention. operating. The invention does not limit the wiring layer to a single layer but can be configured in a plurality of layers. The configuration of the plurality of wiring layers can help the package structure to integrate more components or make the wiring of the package structure more flexible.

The substrate 200 includes at least an insulating layer 210 and a third metal layer 212 on the insulating layer 210. The third metal layer 212 is located on a side of the substrate 200 facing the second metal layer 104 and includes a plurality of pads 214. The substrate 200 has a recessed cavity 202, and the millimeter wave wafer 150 is embedded in the recessed cavity 202 and adhered to the recess of the substrate 200 or the adhesive layer 140 through an adhesive layer 140. Replaced by air. The millimeter wave wafer 150 has an active surface 150a and a contact pad 152 on the active surface 150a. The millimeter wave wafer 150 is buried in the concave cavity. 202, but the active surface 150a faces the second metal layer 104 of the interposer structure 100, and the millimeter wave wafer 150 passes through the bump 160 or the solder ball or the golden ball between the second metal layer 104 and the contact pad 152. The contact pads 152 of the wafer and the second metal layer 104 (pad 112) are electrically connected. In addition, the antenna pattern 110 is electrically connected to the antenna pattern 110 and the millimeter wave wafer 150 through the plated through hole structure 120 and the bumps 160 (the pads 112 and the contact pads 152). Here, the substrate 200 is, for example, a printed circuit board or a ceramic substrate.

Referring to FIG. 1, the antenna pattern 110 may be located above the millimeter wave wafer 150. Here, whether it is above or below the description, depending on the orientation of the package structure, it does not hinder the understanding of the field, mainly because the position of the antenna pattern must be aligned with the position of the wafer configuration, basically The pattern distribution area of the antenna pattern 110 should be equal to or larger than the size of the lower wafer, but the positions of the two are completely or partially corresponding.

Referring to FIG. 1, the interposer structure 100 is superposed on the substrate 200. The interposer structure 100 passes through the bump between the second metal layer 104 (pad 114) and the third metal layer 212 (pad 214). 230 or a solder ball or a gold ball, and electrically connecting the second metal layer 104 and the third metal layer 212. The interposer structure 100 and the substrate 200 may further include a primer layer 130 to assist the adhesion between the two and the bumps. That is, the millimeter wave wafer 150 and the substrate 200 are transmitted through the bumps 160 between the pads 114 and the wafers of the second metal layer 104 and the bumps 230 between the second metal layer 104 and the third metal layer 212. Electrical connection.

Therefore, the integrated millimeter wave chip package structure 10 shown in FIG. 1 will have an antenna The pattern 110 is disposed above the millimeter wave wafer 150 and electrically connected to the antenna pattern 110 and the millimeter wave wafer 150 through the plated through hole structure 120, and the vertically integrated millimeter wave chip package structure 10 without the need for wire bonding The signal transmission distance between the antenna pattern 110 and the millimeter wave wafer 150 is greatly shortened.

2 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention. Referring to FIG. 2, the integrated millimeter wave chip package structure 20 includes an interposer structure 100, a millimeter wave wafer 150, a substrate 200A, and a substrate 300. Here, the substrate 200A of FIG. 2 is substantially similar to the substrate 200 of FIG. 1 except for the same interposer structure 100, but the substrate 200A includes an insulating layer 210 and a third metal layer 212 and a fourth portion which are respectively disposed on both sides of the insulating layer 210. Metal layer 216. The third metal layer 212 includes a plurality of pads 214 and the fourth metal layer 216 includes a plurality of pads 218. In addition, the substrate 200A further includes a plated through hole structure 220 penetrating the substrate 200A and the third metal layer 212 and the fourth metal layer 216 connecting the two sides of the insulating layer 210.

The substrate 300 includes a solder ball 310 disposed on the pad 302. The substrate 300 passes through the solder ball 310 disposed on the pad 302 and the pad 218 of the substrate 200A to physically align the substrate 200A with the substrate 300. Sexually connected and electrically connected. Here, the substrate 200A is, for example, a carrier substrate, and the substrate 300 is a printed circuit board. Therefore, the millimeter wave wafer 150 can be further electrically connected to the printed circuit board through the bumps 160, 230 and the solder balls 310.

3 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with yet another embodiment of the present invention. Referring to FIG. 3, the integrated millimeter wave chip package structure 30 includes an interposer structure 100, a millimeter wave wafer 150, a substrate 200B, and a substrate 300. Here, the substrate 200B is quite similar to the substrate 200A of FIG. 2. Although the substrate 200A has a recessed crystal cavity, the substrate 200B has an opening 203 exposing the millimeter wave wafer 150, and the millimeter wave wafer 150 is transmitted through the second metal. The bumps 160 between the layer 104 and the wafer contact pads 152 are physically coupled to the interposer structure 100. The integrated millimeter wave chip package structure 30 is disposed above the millimeter wave wafer 150 and electrically connected to the antenna pattern 110 and the millimeter wave wafer 150 through the plated through hole structure 120, and the vertically integrated millimeter wave wafer The package structure 30 shortens the signal transmission distance between the antenna pattern 110 and the millimeter wave wafer 150.

4 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention. Referring to FIG. 4, the integrated millimeter wave chip package structure 40 includes an interposer structure 100, a millimeter wave wafer 150, a substrate 200, and another interposer structure 400. Here, in addition to the same interposer structure 100 and substrate 200 as in FIG. 1, the millimeter wave chip package structure 40 of FIG. 4 includes another interposer structure 400 between the substrate 200 and the interposer structure 100, the interposer The structure 400 is coupled to the interposer structure 100 by the bumps 160, 230 and the substrate 200 above and below it. The interposer structure 400 is substantially similar to the interposer structure 100 of FIG. 1. The interposer structure 400 includes an upper metal layer 402, a lower metal layer 404, an insulating support layer 406 between them, a wiring layer 408, and a metal fill structure. 409 and at least one plated through hole structure 420. The metal layer 402 above the interposer structure 400 may be a circuit layer, but may further include an antenna pattern depending on the product design. The lower metal layer 404 can be a wiring layer and includes a plurality of pads. The interposer structure 400 is electrically connected to the interposer structure 100, the millimeter wave wafer 150, and the substrate 200 through the bumps 160 and 230. Matching convex The block 160 and the metal hole filling structure 409, the antenna pattern 110 is electrically connected to the millimeter wave wafer 150 through the plated through hole structures 120 and 420. The millimeter wave chip package structure 40 of FIG. 4 includes another interposer structure 400 that can integrate passive components or antenna patterns or matching networks into the package structure.

5 is a cross-sectional view of an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention. Referring to FIG. 5, the integrated millimeter wave chip package structure 50 includes an interposer structure 100, a millimeter wave wafer 150, a substrate 200A, a substrate 300, and another interposer structure 400. Here, the integrated millimeter wave chip package structure 50 is quite similar to the integrated millimeter wave chip package structure 20 except that the integrated millimeter wave chip package structure 50 includes another interposer structure 400 located on the substrate 200A and the interposer structure 100. The interposer structure 400 is connected to the interposer structure 100 by the bumps 160 and 230 and the substrate 200A above and below the bumps 160 and 230. Similarly, the substrate 300 passes through the solder balls 310 disposed on the pad 302, and the substrate 200A is physically and electrically connected to the substrate 300. Here, the substrate 200A is, for example, a carrier substrate, and the substrate 300 is a printed circuit board. Therefore, the millimeter wave wafer 150 can be further electrically connected to the printed circuit board through the bumps 160, 230 and the solder balls 310.

6 is a cross-sectional view showing an integrated millimeter wave chip package structure in accordance with another embodiment of the present invention. Referring to FIG. 6, the integrated millimeter wave chip package structure 60 includes an interposer structure 100, a millimeter wave wafer 150, a substrate 200B, a substrate 300, and another interposer structure 400. Here, the integrated millimeter wave chip package structure 60 is quite similar to the integrated millimeter wave chip package structure 50, but although the substrate 200A of the millimeter wave chip package structure 50 has a concave cavity, the millimeter wave chip package junction The substrate 200B of the structure 60 has an opening 203 exposing the millimeter wave wafer 150, and the millimeter wave wafer 150 is physically connected to the interposer structure 400 through the bumps 160. The integrated millimeter wave chip package structure 60 is disposed above the millimeter wave wafer 150, and is electrically connected to the antenna pattern 110 and the millimeter wave wafer 150 by using the bump 160 and the plated through hole structures 120 and 420. Integrated millimeter wave chip package structure 60.

The integrated millimeter wave chip package structure of FIG. 7 can be considered as a partial top view for the antenna pattern 110 of FIG. 1 or 3. Referring to FIG. 7, the antenna pattern 110 is directly connected to the plated through hole structure 120, and the vertical feed mode is adopted, so that the layout area required for forming the antenna pattern is small.

Figure 8 is a top plan view of another millimeter wave chip package structure. The antenna pattern 110 of FIG. 7 is directly connected to the plated through hole structure 120. The antenna pattern 110A of FIG. 8 can still be used with the wire 180 to be electrically fed from the side.

In the foregoing embodiments of the present invention, although only one wafer or a single antenna pattern is illustrated, the scope of the present invention is not limited thereto, and a plurality of wafers or a plurality of antenna patterns may be disposed in the integrated package structure. In these embodiments, the millimeter wave wafer 150 may be a radio frequency wafer, and the first, second, third or fourth metal layers may be made of a metal such as aluminum, copper, nickel, gold or silver. The antenna pattern may be a radio frequency antenna pattern, such as a patch antenna, preferably an antenna pattern of the 60 GHz band.

The integrated millimeter wave chip package structure in the embodiment of the invention utilizes electricity The interposer structure of the through-hole structure is plated, and the upper antenna pattern is electrically connected to the wafer. Therefore, it is not necessary to use the wiring or the wire feeding method to connect the antenna pattern, so that the layout area required for forming the antenna pattern is small, reaching Save the layout area.

In summary, the present invention can electrically connect and feed signals to the antenna using a plated through hole structure (via). Compared with the use of a wire or a wire to connect the antenna pattern, the embodiment of the present invention electrically connects and feeds the signal to the antenna by using a plated through hole structure (via), so that the area occupied by the antenna is small. Figure 9 is an equivalent wavelength diagram of the gain of the millimeter wave 60 GHz microstrip antenna versus the length of the via hole. The via length of the antenna is between one-eighth of the waveguide wavelength and one-sixteenth of the waveguide wavelength. According to the structure of the embodiment of the present invention, when the length of the via hole is about one-tenth of the waveguide wavelength, the antenna gain is 6.3 dBi, and the benefit is better. Figure 10 is a graph showing the frequency response of the millimeter wave antenna radiation efficiency. According to the matching requirements of the wafer and product design, the length of the via hole can be designed to match one-tenth of the wavelength D of the guided wave, that is, D/11. As shown in FIG. 10, at 60 GHz, the antenna gain using the conduction line feed mode is 6.1 dBi, the antenna radiation efficiency is 80% (shown by a broken line), and the via hole feed mode is used (the length of the via hole is about D/ 11) The antenna gain is 6.3dBi and the radiation efficiency is 83% (shown by the solid line), which really improves the antenna performance.

The invention can embed the wafer in a recessed or open substrate to reduce the overall thickness of the package structure. In addition, compared with the package structure in which the antenna is connected by wire or wiring, the wafer of the present invention is connected with the through-hole conduction structure to connect the antenna pattern, thereby reducing the area required for the antenna layout, without impairing or even enhancing the antenna performance, and the present invention effectively integrates the RF. Wafer and antenna pattern in the package structure to reduce millimeter waves Power consumption, improve package module performance. In the embodiment of the present invention, by disposing the antenna pattern above or below the wafer arrangement position and electrically connecting the antenna pattern and the wafer through the plated via structure, the signal transmission path is shortened to reduce high frequency signal loss.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Package structure

100‧‧‧Intermediary structure

102‧‧‧First metal layer

104‧‧‧Second metal layer

106‧‧‧Insulating support layer

108‧‧‧ wiring layer

109‧‧‧Metal hole filling structure

110‧‧‧Antenna pattern

112, 114, 214‧‧ ‧ pads

120‧‧‧Electroplated through-hole structure

130‧‧‧Under layer

140‧‧‧Adhesive layer

150‧‧‧ millimeter wave wafer

150a‧‧‧ active face

152‧‧‧Contact pads

160, 230‧‧ ‧ bumps

200‧‧‧Substrate

202‧‧‧ concave concave hole

210‧‧‧Insulation

212‧‧‧ Third metal layer

Claims (14)

An integrated millimeter wave chip package structure comprising: an interposer structure, wherein the interposer structure comprises a first metal layer, a second metal layer, an insulating support layer between the first and second metal layers, and the intermediary The layer structure includes at least one first plated through hole structure extending through the first metal layer, the insulating support layer and the second metal layer, and electrically connecting the first metal layer and the second metal layer; at least one wafer, Connecting to the interposer structure, wherein the wafer has an active surface and a contact pad on the active surface; and a substrate coupled to the interposer structure, wherein the substrate includes at least an insulating layer and a third metal on the insulating layer a layer, the third metal layer is located on a side of the substrate facing the interposer structure; the first metal layer of the interposer structure includes at least an antenna pattern, the antenna pattern is located above or below the wafer, and the wafer passes through the layer The first plated through hole structure of the interposer structure is electrically connected to the antenna pattern, wherein the interposer structure further comprises a wiring layer located in the insulating support layer And located between the antenna pattern and the second metal layer, the wiring layer includes a ground layer. The integrated millimeter wave chip package structure according to claim 1, wherein the substrate has a concave cavity, the wafer is buried in the concave cavity and the active surface of the wafer faces the interposer a second metal layer of the structure, the wafer is physically coupled to the interposer structure through a bump between the contact pad and the second metal layer, and the wafer passes through the bump and the first plated through hole structure Electrical The antenna pattern is connected. The integrated millimeter wave chip package structure of claim 1, wherein the substrate has an opening exposing the wafer, the active surface of the wafer facing the second metal layer of the interposer structure, the wafer is located through A bump between the contact pad and the second metal layer is physically coupled to the interposer structure, and the wafer is electrically connected to the antenna pattern through the bump and the first plated through hole structure. The integrated millimeter wave chip package structure according to claim 2, wherein the substrate of the integrated millimeter wave chip package structure further comprises a fourth metal layer and a second plated through hole structure, wherein the fourth metal layer is located The second plating via structure penetrates the substrate and connects the third metal layer and the fourth metal layer on both sides of the insulating layer with respect to the other surface of the third metal layer. The integrated millimeter wave chip package structure according to claim 3, wherein the substrate of the integrated millimeter wave chip package structure further comprises a fourth metal layer and a second plated through hole structure, wherein the fourth metal layer is located The second plating via structure penetrates the substrate and connects the third metal layer and the fourth metal layer on both sides of the insulating layer with respect to the other surface of the third metal layer. The integrated millimeter wave chip package structure of claim 4, wherein the integrated millimeter wave chip package structure further comprises another substrate coupled to the substrate, the another substrate comprising the substrate and the other substrate A solder ball between the substrates, the other substrate being transparently connected to the other substrate by the solder ball and electrically connected. Integrated millimeter wave chip package junction as described in claim 5 The integrated millimeter wave chip package structure further includes another substrate coupled to the substrate, the other substrate including a solder ball disposed between the substrate and the other substrate, the other substrate being passed through the solder ball The substrate is physically and electrically connected to the other substrate. The integrated millimeter wave chip package structure according to claim 2, wherein the integrated millimeter wave chip package structure further comprises another interposer structure and a plurality of bumps, the another interposer structure including at least one a three-plated via structure extending through the other interposer structure, the another interposer structure being located between the wafer and the interposer structure, and the wafer being bonded to the other interposer structure through the bumps, the other The interposer structure is further connected to the interposer structure through the bumps, and the wafer and the interposer structure are physically connected to the other interposer structure through the bumps and the first and third plated through-hole structures. And electrically connected. The integrated millimeter wave chip package structure according to claim 3, wherein the integrated millimeter wave chip package structure further comprises another interposer structure and a plurality of bumps, the another interposer structure including at least one a three-plated via structure extending through the other interposer structure, the another interposer structure being located between the wafer and the interposer structure, and the wafer being bonded to the other interposer structure through the bumps, the other The interposer structure is further connected to the interposer structure through the bumps, and the wafer and the interposer structure are physically connected to the other interposer structure through the bumps and the first and third plated through-hole structures. And electrically connected. The integrated millimeter wave chip package structure according to claim 8, wherein the substrate of the integrated millimeter wave chip package structure further comprises a fourth metal a layer and a second plated through hole structure, the fourth metal layer is located on the other side of the insulating layer opposite to the third metal layer, the plated through hole structure penetrating the substrate to connect the third metal layer on both sides of the insulating layer And the fourth metal layer. The integrated millimeter wave chip package structure according to claim 9, wherein the substrate of the integrated millimeter wave chip package structure further comprises a fourth metal layer and a second plated through hole structure, wherein the fourth metal layer is located The insulating layer is opposite to the other surface of the third metal layer, and the plated through hole structure penetrates the substrate to connect the third metal layer and the fourth metal layer on both sides of the insulating layer. The integrated millimeter wave chip package structure of claim 10, wherein the integrated millimeter wave chip package structure further comprises another substrate coupled to the substrate, the other substrate comprising the substrate and the other substrate A solder ball between the substrates, the other substrate is transparently connected to the other substrate through the solder ball and electrically connected. The integrated millimeter wave chip package structure according to claim 11, wherein the integrated millimeter wave chip package structure further comprises another substrate coupled to the substrate, the other substrate comprising the substrate and the other substrate A solder ball between the substrates, the other substrate is transparently connected to the other substrate through the solder ball and electrically connected. The integrated millimeter wave chip package structure of claim 1, wherein the wafer is a radio frequency wafer.