CN105759373B - A kind of multicore Planar Optical Waveguide Structures and its coupled structure - Google Patents

A kind of multicore Planar Optical Waveguide Structures and its coupled structure Download PDF

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Publication number
CN105759373B
CN105759373B CN201610326163.8A CN201610326163A CN105759373B CN 105759373 B CN105759373 B CN 105759373B CN 201610326163 A CN201610326163 A CN 201610326163A CN 105759373 B CN105759373 B CN 105759373B
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led
complementary wave
silica
sub
waveguide
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CN105759373A (en
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陈奔
梁雪瑞
朱虎
胡百泉
张玓
刘成刚
周日凯
付永安
孙莉萍
马卫东
余向红
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Wuhan Telecommunication Devices Co Ltd
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Wuhan Telecommunication Devices Co Ltd
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Priority to PCT/CN2016/110358 priority patent/WO2017197881A1/en
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Priority to US16/192,845 priority patent/US10656350B2/en
Priority to US16/843,882 priority patent/US11181702B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The present invention relates to optical waveguide coupled technical field, there is provided a kind of multicore Planar Optical Waveguide Structures and its coupled structure.Wherein, multicore Planar Optical Waveguide Structures include：Include the main waveguide of silica for communicating optical signals in the planar optical waveguide, and the complementary wave of auxiliary entering light is led；The complementary wave is led is led including one or more silica complementary wave, and the silica complementary wave is led to be set with the main waveguide of the silica according to default center distance.What the embodiment of the present invention was proposed, which includes the Planar Optical Waveguide Structures that one or more silica complementary wave is led, can complete laser to the passive to light and direct-coupling of PLC, and the prior art that compares can improve registration tolerance；It raising based on the registration tolerance, can further mitigate the requirement in automation equipment for craft precision, shortening can be reached to light and weld interval, and further reduce defect rate, so as to reach the purpose for reducing cost.

Description

A kind of multicore Planar Optical Waveguide Structures and its coupled structure
【Technical field】
The present invention relates to optical waveguide coupled technical field, more particularly to a kind of multicore Planar Optical Waveguide Structures and its coupling Structure.
【Background technology】
The 40G/100G optical modules of main flow are substantially still based on the free space of prism, lens, light filter plate etc. at present Coupling technique, it is characterized in that technics comparing is complicated, it is necessary to actively more massive integrated extremely difficult to light, packaging cost height.
On the other hand, integreted phontonics technology, active device (laser, detector, image intensifer, optical modulator etc.) is referred to It is integrated with passive device (optical splitting/combining apparatus, optical filter, light multiplexing/demultiplexer etc.), so as to realize monolithic multifunction Optical device technology.Integreted phontonics technology is considered to be recent or even future, particularly should in the short distance optical interconnection such as data center In, strong optical module technology.However, how effectively by single-mode laser optically coupling to planar optical waveguide (Planar Lightwave Circuit, PLC) or other silicon substrate optical integrated chips, or a current big problem.Remove Beyond coupling efficiency, how to cause simple for process, the effect to reduce the cost can be reached using automatic equipment, also together Sample is important problem.
In consideration of it, the defects of overcoming present in the prior art is the art urgent problem to be solved.
【The content of the invention】
The technical problem to be solved in the present invention be how effectively by single-mode laser optically coupling to planar optical waveguide or Other silicon substrate optical integrated chips of person.
The present invention adopts the following technical scheme that：
In a first aspect, the embodiments of the invention provide a kind of multicore Planar Optical Waveguide Structures, including：
Include the main waveguide of silica for communicating optical signals, and the complementary wave of auxiliary entering light in the planar optical waveguide Lead；
The complementary wave is led is led including one or more silica complementary wave, and the silica complementary wave is led and the dioxy The main waveguide of SiClx is set according to default center distance.
Preferably, the complementary wave, which is led, specifically includes two strip complementary waves and leads, wherein, the first sub- complementary wave is led positioned at the titanium dioxide The upside of the main waveguide of silicon, the second sub- complementary wave are led positioned at the downside of the main waveguide of the silica.
Preferably, the described first sub- complementary wave is led to lead with the second sub- complementary wave and formed by positive terraced body structure；
The wherein main waveguide light inlet of ladder top and silica is located at the same side；Terraced bottom extends to optical transmission direction, and ladder The width at bottom is identical with the width of the main waveguide of silica；
Wherein, the first sub- complementary wave lead terraced body and the second sub- complementary wave lead on terraced body with the main waveguide lower planes of the silica Adjacent side, keep respectively parallel with the main waveguide lower planes of the silica.
Preferably, it is 1310nm-1660nm in the centre wavelength of the single mode active device of selection, far-field emission angle is 25 ° At × 40 °, the parameter that the main waveguide and complementary wave are led is specially：
The width W of main waveguide light inletIt is main=3.0 μm, height HIt is main=3.0 μm；
Complementary wave leads the width W of light inletSecondary in=2.6 μm, height HSecondary in=3.0 μm；
Complementary wave leads the width W at terraced bottomSecondary out=3.0 μm, height HSecondary out=3.0 μm；
Secondary waveguide length LIt is secondary=100 μm, Ay=3.6 μm of the centre distance that main waveguide and complementary wave are led.
Preferably, main waveguide and complementary wave are led in multicore Planar Optical Waveguide Structures, and its is each refractive index phase inside and outside sandwich layer Near covering, its refractive index contrast are 0.013.
Preferably, the complementary wave, which is led, specifically includes eight strip complementary waves and leads, wherein, the first sub- complementary wave is led positioned at the titanium dioxide The upside of the main waveguide of silicon；Second sub- complementary wave is led positioned at the downside of the main waveguide of the silica；3rd sub- complementary wave is led positioned at described The left side of the main waveguide of silica；4th sub- complementary wave is led positioned at the right side of the main waveguide of the silica；5th sub- complementary wave leads position Left side is led in the upper left side of the main waveguide of the silica, and positioned at the described first sub- complementary wave, is led positioned at the 3rd sub- complementary wave Upside；6th sub- complementary wave is led positioned at the upper right side of the main waveguide of the silica, and leads left side, position positioned at the described first sub- complementary wave Upside is led in the 4th sub- complementary wave；7th sub- complementary wave leads the lower left side positioned at the main waveguide of the silica, and positioned at described Second sub- complementary wave leads left side, and downside is led positioned at the 3rd sub- complementary wave；8th sub- complementary wave is led positioned at the main waveguide of the silica Lower right side, and positioned at the described second sub- complementary wave lead right side, positioned at the 4th sub- complementary wave lead downside.
Preferably, each sub- complementary wave leads specially positive terraced body structure, and four sides for connecting ladder top and terraced bottom are equal For inclined-plane, the light inlet of wherein ladder top and the main waveguide of silica is located at the homonymy of the multicore planar optical waveguide.
Preferably, main waveguide and complementary wave are led in multicore Planar Optical Waveguide Structures, and its is each refractive index phase inside and outside sandwich layer Near covering, its refractive index contrast are 0.013
Second aspect, the embodiment of the present invention additionally provide a kind of multicore planar optical waveguide coupled structure, including first aspect The multicore planar optical waveguide of the structure, then the coupled structure also include single mode active device, specifically：
Set in the multicore planar optical waveguide positioned at the entering light side that the main waveguide of the silica and silica complementary wave are led It is equipped with single mode active device fixed station；
Pad and alignment mark are provided with the fixed station, the pad is used for and the phase on the single mode active device Pad is answered to complete welding；The alignment mark is used for the addressing that binding solder joint is provided for automatic bonding machines；
In the coupled structure, the single mode active device and the main waveguide of the silica and silica complementary wave are led Light inlet between be provided with coupling interstitial spaces d, the matching for index matching is filled with the coupling interstitial spaces Glue.
Preferably, the coupled structure being made up of the single mode active device and multicore planar optical waveguide specifically includes EPON light Module, GPON optical modules；High speed single channel optical module SFP, SFP+ in data communication；Or for 40G, 100G optical transports Parallel modules QSFP, QSFP28.
Compared with prior art, the beneficial effects of the present invention are：The embodiment of the present invention proposed include one or The Planar Optical Waveguide Structures that multiple silica complementary waves are led can complete laser to the passive to light and direct-coupling, phase of PLC Registration tolerance can be improved by comparing prior art；Raising based on the registration tolerance, it can further mitigate automation equipment In requirement for craft precision, shortening can be reached to light and weld interval, and further reduce defect rate, so as to reach drop The purpose of low cost.
【Brief description of the drawings】
Fig. 1 is a kind of multicore planar optical waveguide coupled structure schematic diagram provided in an embodiment of the present invention；
Fig. 2 is the partial enlarged drawing provided in an embodiment of the present invention by C-C ' sectional top views in Fig. 1；
Fig. 3 is the partial enlarged drawing provided in an embodiment of the present invention by A-A ' sectional top views in Fig. 1；
Fig. 4 is partial enlarged drawings of the Fig. 1 provided in an embodiment of the present invention with reference to D-D ' sections in figure 3；
Fig. 5 is reference chart 3 provided in an embodiment of the present invention and by the partial enlarged drawing of B-B ' sectional views in Fig. 1；
Fig. 6 is the alignment tolerance figure provided in an embodiment of the present invention obtained based on simulation test；
Fig. 7 is another partial enlarged drawing by A-A ' sectional top views in Fig. 1 provided in an embodiment of the present invention；
Fig. 8 is partial enlarged drawings of the Fig. 1 provided in an embodiment of the present invention with reference to D-D ' sections in figure 7；
Fig. 9 is reference chart 7 provided in an embodiment of the present invention and by the partial enlarged drawing of B-B ' sectional views in Fig. 1；
Figure 10 is the alignment tolerance figure provided in an embodiment of the present invention obtained based on simulation test.
【Embodiment】
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.
In addition, as long as technical characteristic involved in each embodiment of invention described below is each other not Conflict can is formed to be mutually combined.
It is emphasized that the sectional view given in description of the invention accompanying drawing is using with perspective structure function, In order preferably to show the main waveguide of silica and stepped construction that silica complementary wave is led, and under the same perspective, Difference between its size.
Embodiment 1:
The embodiment of the present invention 1 provides a kind of multicore Planar Optical Waveguide Structures, as shown in figure 1, the multicore plane light wave Guide structure includes：
Include the main waveguide of silica for communicating optical signals, and the complementary wave of auxiliary entering light in the planar optical waveguide Lead；
The complementary wave is led is led including one or more silica complementary wave, and the silica complementary wave is led and the dioxy The main waveguide of SiClx is set according to default center distance.
Wherein, the centre distance is used to ensure that one or more of silica complementary waves are led and the silica Main waveguide produces enough coupling effects in light receiving surface.
The Planar Optical Waveguide Structures energy for including one or more silica complementary wave and leading that the embodiment of the present invention is proposed Laser is enough completed to the passive to light and direct-coupling of PLC, the prior art that compares can improve registration tolerance；Based on this It the raising of registration tolerance, can further mitigate the requirement in automation equipment for craft precision, shortening can be reached to light And weld interval, and defect rate is further reduced, so as to reach the purpose for reducing cost.
A kind of preferable implementation be present with reference to the embodiment of the present invention, as shown in Fig. 2 the main waveguide bag of the silica Including coupled section and conductive sections, the coupled section is just terraced body structure or terraced body structure, wherein, the coupled section and the list The face that mould active device is coupled is ladder top, and the coupled section and the conductive sections joint face are terraced bottom.
Embodiment 2:
Based on a kind of multicore Planar Optical Waveguide Structures described in embodiment 1, the embodiment of the present invention 2 is specifically described one of which The composition that optional silica complementary wave is led, as shown in Fig. 3, Fig. 4 and Fig. 5：
Include the main waveguide of silica for communicating optical signals, and the complementary wave of auxiliary entering light in the planar optical waveguide Lead；
The complementary wave, which is led, to be specifically included two strip complementary waves and leads, wherein, the first sub- complementary wave is led positioned at the main ripple of the silica The upside led, the second sub- complementary wave is led leads and described two positioned at the downside of the main waveguide of the silica, the silica complementary wave The main waveguide of silica is set according to default center distance.
Wherein, the centre distance is used to ensure that one or more of silica complementary waves are led and the silica Main waveguide produces enough coupling effects in light receiving surface.
With reference to the embodiment of the present invention, a kind of preferable implementation be present, (A-A ' bows horizontal cross-section in Fig. 1 as shown in Figure 3 View), the first sub- complementary wave is led to lead with the second sub- complementary wave and formed by positive terraced body structure；
The wherein main waveguide light inlet of ladder top and silica is located at the same side；Terraced bottom extends to optical transmission direction, and ladder The width at bottom is identical with the width of the main waveguide of silica；
Wherein, the first sub- complementary wave lead terraced body and the second sub- complementary wave lead on terraced body with the main waveguide lower planes of the silica Adjacent side, keep respectively parallel with the main waveguide lower planes of the silica.
In optional implementation, the first sub- complementary wave leads that led with the second sub- complementary wave can be by terraced body structure structure Into compare such scheme, it is characterised in that the first sub- complementary wave is led leads along optical transmission direction with the second sub- complementary wave, such as Fig. 5 institutes The sectional area shown is less and less.
It is 1310nm-1660nm in the centre wavelength of the single mode active device of selection, far field is sent out with reference to the embodiment of the present invention 10 ° -40 ° of firing angle X-direction, during 10 ° -45 ° of Y-direction, the embodiment of the present invention additionally provides the main waveguide and complementary wave is led one group Parameter, it is specially with reference to figure 3 and Fig. 4：
The width W of main waveguide light inletIt is main=3.0 μm, height HIt is main=3.0 μm；
Complementary wave leads the width W of light inletSecondary in=2.6 μm, height HSecondary in=3.0 μm；
Complementary wave leads the width W at terraced bottomSecondary out=3.0 μm, height HSecondary out=3.0 μm；
Secondary waveguide length LIt is secondary=100 μm, Ay=3.6 μm of the centre distance that main waveguide and complementary wave are led.
In the various implementations of the present embodiment, a kind of implementation be present, wherein, main waveguide and complementary wave are led and put down in multicore In the optical waveguide structure of face, each the inside and outside covering for refractive index close of sandwich layer, its refractive index contrast are 0.013 for its.It is all this A little sizes need to be optimized according to application conditions (operation wavelength, the condition such as PLC functions and technique etc.) to determine.Before in the prior art End and rear end same size, then its highest coupling efficiency is only that 25%, 6dB registration tolerances are a point, i.e. laser and PLC Be welded and fixed the degree of accuracy that reach high, slightly deviation will not reach the 6dB registration tolerances.Fig. 6 is that this implementation 2 exists The centre wavelength of single mode active device is 1310nm, and far-field emission angle is the coupling simulated under 25 ° × 40 ° of parameter setting Efficiency distribution figure.Highest coupling efficiency is that 32%, 6dB registration tolerances (such as Fig. 6) are：
X-direction=+/- 0.825 μm；
Y-direction=+/- 0.9 μm.
Compared with the method for single waveguide, result above improves highest coupling efficiency, and further relaxes 6dB Registration tolerance.The precision of commercial automatic bonding machines can reach +/- 0.5 μm at present, and the result of the embodiment of the present invention completely can be with Directly laser is mounted to PLC with automatic mode, completes laser to the passive to light and direct-coupling of PLC.And The application of automation equipment can greatly ensure processing quality, shorten to light and weld interval, and cost is reduced so as to reach Purpose.
Embodiment 3:
Based on a kind of multicore Planar Optical Waveguide Structures described in embodiment 1, the embodiment of the present invention 3 is specifically described one of which The composition that optional silica complementary wave is led, as shown in Figure 7, Figure 8 and Figure 9：
Include the main waveguide of silica for communicating optical signals, and the complementary wave of auxiliary entering light in the planar optical waveguide Lead；
The complementary wave, which is led, to be specifically included eight strip complementary waves and leads, wherein, the first sub- complementary wave leads 01 and is located at the silica master The upside of waveguide；Second sub- complementary wave leads 02 downside for being located at the main waveguide of the silica；3rd sub- complementary wave leads 03 positioned at described The left side of the main waveguide of silica；4th sub- complementary wave leads 04 right side for being located at the main waveguide of the silica；5th sub- complementary wave is led 05 is located at the upper left side of the main waveguide of the silica, and leads left side positioned at the described first sub- complementary wave, secondary positioned at the described 3rd son On the upside of waveguide；6th sub- complementary wave leads 06 and is located at the upper right side of the main waveguide of the silica, and is led positioned at the described first sub- complementary wave Left side, upside is led positioned at the 4th sub- complementary wave；7th sub- complementary wave leads 07 lower left side for being located at the main waveguide of the silica, and Left side is led positioned at the described second sub- complementary wave, downside is led positioned at the 3rd sub- complementary wave；8th sub- complementary wave leads 08 and is located at the dioxy The lower right side of the main waveguide of SiClx, and positioned at the described second sub- complementary wave lead right side, positioned at the 4th sub- complementary wave lead downside, described two Silica complementary wave is led to be set with the main waveguide of the silica according to default center distance.
Wherein, the centre distance is used to ensure that one or more of silica complementary waves are led and the silica Main waveguide produces enough coupling effects in light receiving surface.
With reference to the embodiment of the present invention, a kind of preferable implementation be present, (A-A ' bows horizontal cross-section in Fig. 1 as shown in Figure 7 View), each sub- complementary wave leads specially positive terraced body structure, and four sides for connecting ladder top and terraced bottom are inclined-plane, its Middle ladder top and the light inlet of the main waveguide of silica are located at the homonymy of the multicore planar optical waveguide.
In optional implementation, each silica complementary wave, which is led, to be formed by terraced body structure, compared Such scheme, it is characterised in that the first sub- complementary wave is led leads along optical transmission direction with the second sub- complementary wave, sectional area as shown in Figure 9 It is less and less.
In the various implementations of the present embodiment, a kind of implementation be present, wherein, main waveguide and complementary wave are led and put down in multicore In the optical waveguide structure of face, each the inside and outside covering for refractive index close of sandwich layer, its refractive index contrast are 0.013 for its.
It is 1310nm-1660nm in the centre wavelength of the single mode active device of selection, far field is sent out with reference to the embodiment of the present invention 10 ° -40 ° of firing angle X-direction, during 10 ° -45 ° of Y-direction, the embodiment of the present invention additionally provides the main waveguide and complementary wave is led one group Parameter, it is specially with reference to figure 7 and Fig. 8：
The width W of main waveguide light inletIt is main=3.0 μm, height HIt is main=3.0 μm；
Complementary wave leads the width W of light inletSecondary in=2.5 μm, height HSecondary in=1.7273 μm；
Complementary wave leads the width W at terraced bottomSecondary out=3.0 μm, height HSecondary out=3.5 μm；
Secondary waveguide length LIt is secondary=100 μm；
Main waveguide and complementary wave lead Ax=3.5 μm of the centre distance in X-direction；
Main waveguide and complementary wave lead Ay=3.5 μm of centre distance in the Y direction.
All these sizes need to be optimized according to application conditions (operation wavelength, the condition such as PLC functions and technique etc.) to determine It is fixed.Front-end and back-end same size in the prior art, then its highest coupling efficiency is only that 25%, 6dB registration tolerances are one Point, i.e. laser and PLC are welded and fixed the degree of accuracy that reach high, and slightly deviation will not reach the 6dB contrapositions and hold Difference.It is 1310nm that Figure 10, which is this implementation 3 in the centre wavelength of single mode active device, and far-field emission angle is that 25 ° × 40 ° of parameter is set Put down, the coupling efficiency distribution map simulated.Highest coupling efficiency is that 33%, 6dB registration tolerances are (as described in Figure 10)：
X-direction=+/- 0.95 μm；
Y-direction=+/- 0.95 μm.
Compared with the method for single waveguide, result above improves highest coupling efficiency, and further relaxes 6dB Registration tolerance.The precision of commercial automatic bonding machines can reach +/- 0.5 μm at present, and the result of the embodiment of the present invention completely can be with Directly laser is mounted to PLC with automatic mode, completes laser to the passive to light and direct-coupling of PLC.And The application of automation equipment can greatly ensure processing quality, shorten to light and weld interval, and cost is reduced so as to reach Purpose.
The embodiment of the present invention 2 and embodiment 3 give the topology layout side that yi word pattern and hollow silica complementary wave are led Formula, those skilled in the art are based on the basis of above-mentioned preferred scheme, and that designs also has for example cross, chiasma type silica The layout type that complementary wave is led similarly belongs in invention which is intended to be protected.
Embodiment 4:
The embodiment of the present invention additionally provides a kind of multicore planar optical waveguide coupled structure, including as described in embodiment 1,2 or 3 The multicore planar optical waveguide of structure, the coupled structure also include single mode active device, wherein, single mode active device is included but not It is limited to fabry-Perot type laser (Fabry-Perot, to be abbreviated as：FP), distributed feedback laser (Distributed Feedback Laser, are abbreviated as：DFB), Electroabsorption Modulated Laser (Electlro-absorption Modulated Laser, it is abbreviated as：EML), based on semiconductor optical amplifier, (semiconductor opticalamplifier, are abbreviated as： SOA) etc..As shown in figure 1, the coupled structure is specially：
Set in the multicore planar optical waveguide positioned at the entering light side that the main waveguide of the silica and silica complementary wave are led It is equipped with single mode active device fixed station；
Pad and alignment mark are provided with the fixed station, the pad is used for and the phase on the single mode active device Pad is answered to complete welding；The alignment mark is used for the addressing that binding solder joint is provided for automatic bonding machines；
As shown in figure 1, the pad in multicore planar optical waveguide is also referred to as bonding solder joint.
In the coupled structure, the single mode active device and the main waveguide of the silica and silica complementary wave are led Light inlet between be provided with coupling interstitial spaces d, the matching for index matching is filled with the coupling interstitial spaces Glue.
With reference to the embodiment of the present invention, the coupled structure being made up of the single mode active device and multicore planar optical waveguide is specific Including EPON optical modules, GPON optical modules；High speed single channel optical module SFP, SFP+ in data communication；Or for 40G, Parallel modules QSFP, QSFP28 of 100G optical transports.
What deserves to be explained is in information exchange, implementation procedure between module, unit in said apparatus and system etc. Hold, due to being based on same design with the processing method embodiment of the present invention, particular content can be found in the inventive method embodiment Narration, here is omitted.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of embodiment is to lead to Program is crossed to instruct the hardware of correlation to complete, the program can be stored in a computer-readable recording medium, storage medium It can include：Read-only storage (ROM, Read Only Memory), random access memory (RAM, Random Access Memory), disk or CD etc..
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.

Claims (6)

  1. A kind of 1. multicore Planar Optical Waveguide Structures, it is characterised in that including：
    Include the main waveguide of silica for communicating optical signals in the planar optical waveguide, and the complementary wave of auxiliary entering light is led；
    The complementary wave is led is led including eight sub- complementary waves of silica, and the sub- complementary wave of silica is led and the main ripple of the silica Lead and set according to default center distance；
    In the sub- complementary wave of eight silica is led, the first sub- complementary wave is led positioned at the upside of the main waveguide of the silica；The Two sub- complementary waves are led positioned at the downside of the main waveguide of the silica；3rd sub- complementary wave is led positioned at a left side for the main waveguide of the silica Side；4th sub- complementary wave is led positioned at the right side of the main waveguide of the silica；5th sub- complementary wave is led positioned at the main ripple of the silica The upper left side led, and left side is led positioned at the described first sub- complementary wave, lead upside positioned at the 3rd sub- complementary wave；6th sub- complementary wave leads position Left side is led in the upper right side of the main waveguide of the silica, and positioned at the described first sub- complementary wave, is led positioned at the 4th sub- complementary wave Upside；7th sub- complementary wave leads the lower left side positioned at the main waveguide of the silica, and leads left side, position positioned at the described second sub- complementary wave Downside is led in the 3rd sub- complementary wave；8th sub- complementary wave is led positioned at the lower right side of the main waveguide of the silica, and positioned at described Second sub- complementary wave leads right side, and downside is led positioned at the 4th sub- complementary wave.
  2. 2. multicore Planar Optical Waveguide Structures according to claim 1, it is characterised in that in the single mode active device of selection Centre wavelength is 1310nm-1660nm, and when far-field emission angle is 25 ° × 40 °, the parameter that the main waveguide and complementary wave are led is specific For：
    The width W of main waveguide light inletIt is main=3.0 μm, height HIt is main=3.0 μm；
    Complementary wave leads the width W of light inletSecondary in=2.6 μm, height HSecondary in=3.0 μm；
    Complementary wave leads the width W at terraced bottomSecondary out=3.0 μm, height HSecondary out=3.0 μm；
    Secondary waveguide length LIt is secondary=100 μm, Ay=3.6 μm of the centre distance that main waveguide and complementary wave are led.
  3. 3. multicore Planar Optical Waveguide Structures according to claim 1, it is characterised in that main waveguide and complementary wave are led and put down in multicore In the optical waveguide structure of face, each the inside and outside covering for refractive index close of sandwich layer, its refractive index contrast are 0.013 for its.
  4. 4. multicore Planar Optical Waveguide Structures according to claim 1, it is characterised in that each sub- complementary wave is led specially just Terraced body structure, and four sides for connecting ladder top and terraced bottom are inclined-plane, wherein ladder top and the entering light of the main waveguide of silica Mouth is located at the homonymy of the multicore planar optical waveguide.
  5. A kind of 5. multicore planar optical waveguide coupled structure, it is characterised in that including as described in claim 1-4 is any structure it is more Core planar optical waveguide, then the coupled structure also include single mode active device, specifically：
    It is provided with the multicore planar optical waveguide positioned at the entering light side that the main waveguide of the silica and silica complementary wave are led Single mode active device fixed station；
    Pad and alignment mark are provided with the fixed station, the pad is used for and the corresponding weldering on the single mode active device Disk completes welding；The alignment mark is used for the addressing that binding solder joint is provided for automatic bonding machines；
    In the coupled structure, what the single mode active device and the main waveguide of the silica and silica complementary wave were led enters Coupling interstitial spaces d is provided between optical port, the matching glue for index matching is filled with the coupling interstitial spaces.
  6. 6. coupled structure according to claim 5, it is characterised in that by the single mode active device and multicore plane light wave The coupled structure for leading composition specifically includes EPON optical modules, GPON optical modules；High speed single channel optical module in data communication SFP、SFP+；Or for 40G, parallel modules QSFP, QSFP28 of 100G optical transports.
CN201610326163.8A 2016-05-17 2016-05-17 A kind of multicore Planar Optical Waveguide Structures and its coupled structure Active CN105759373B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201610326163.8A CN105759373B (en) 2016-05-17 2016-05-17 A kind of multicore Planar Optical Waveguide Structures and its coupled structure
PCT/CN2016/110358 WO2017197881A1 (en) 2016-05-17 2016-12-16 Planar optical-waveguide structure, and coupling structure and coupling method thereof
US16/192,845 US10656350B2 (en) 2016-05-17 2018-11-16 Planar optical waveguide structure, and coupling structure thereof and coupling method thereof
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