CN105759374B - A kind of Planar Optical Waveguide Structures and its coupled structure and coupling process - Google Patents
A kind of Planar Optical Waveguide Structures and its coupled structure and coupling process Download PDFInfo
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- CN105759374B CN105759374B CN201610326883.4A CN201610326883A CN105759374B CN 105759374 B CN105759374 B CN 105759374B CN 201610326883 A CN201610326883 A CN 201610326883A CN 105759374 B CN105759374 B CN 105759374B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
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Abstract
The present invention relates to optical waveguide coupled technical field, there is provided a kind of Planar Optical Waveguide Structures and its coupled structure and coupling process, wherein, the coupled structure includes single mode active device and planar optical waveguide, specifically：The planar optical waveguide includes the SiO 2 waveguide for communicating optical signals, wherein, the SiO 2 waveguide is made up of coupled section and conductive sections；The coupled section is just terraced body structure or terraced body structure, wherein, the coupled section be ladder top with the face that the single mode active device is coupled, and the coupled section and the conductive sections joint face are terraced bottom；It is preset between the single mode active device and the planar optical waveguide and couples interstitial spaces.The embodiment of the present invention completes laser can use automation equipment to complete, can greatly ensure processing quality, shorten to light and weld interval, so as to reach the purpose for reducing cost to the passive of PLC to light and direct-coupling, the structure.
Description
【Technical field】
The present invention relates to optical waveguide coupled technical field, more particularly to a kind of Planar Optical Waveguide Structures and its coupled structure
And coupling process.
【Background technology】
The 40G/100G optical modules of main flow are substantially or the free space based on prism, lens, light filter plate etc. at present
Coupling technique, it is characterized in that technics comparing is complicated, it is necessary to actively more massive integrated extremely difficult to light, packaging cost height.
On the other hand, integreted phontonics technology, active device (laser, detector, image intensifer, optical modulator etc.) is referred to
It is integrated with passive device (optical splitting/combining apparatus, optical filter, light multiplexing/demultiplexer etc.), so as to realize monolithic multifunction
Optical device technology.Integreted phontonics technology is considered to be recent or even future, particularly should in the short distance optical interconnection such as data center
In, strong optical module technology.However, how effectively by single-mode laser optically coupling to planar optical waveguide
(Planar Lightwave Circuit, PLC) or other silicon substrate optical integrated chips, or a current big problem.Remove
Beyond coupling efficiency, how to cause simple for process, the effect to reduce the cost can be reached using automatic equipment, also together
Sample is important problem.
In consideration of it, the defects of overcoming present in the prior art is the art urgent problem to be solved.
【The content of the invention】
The technical problem to be solved in the present invention how effectively by single-mode laser optically coupling to planar optical waveguide or
Other silicon substrate optical integrated chips.
The present invention adopts the following technical scheme that：
In a first aspect, the embodiments of the invention provide a kind of coupled structure based on planar optical waveguide, the coupled structure
Including single mode active device and planar optical waveguide, specifically：
The planar optical waveguide includes the SiO 2 waveguide for communicating optical signals, wherein, the SiO 2 waveguide
It is made up of coupled section and conductive sections；
The coupled section is terraced body structure, wherein, the face that the coupled section is coupled with the single mode active device is ladder
Top, the coupled section and the conductive sections joint face are terraced bottom；
It is preset between the single mode active device and the planar optical waveguide and couples interstitial spaces.
Preferably, the value of the coupling interstitial spaces d is 5 μm -50 μm, and is filled with the coupling interstitial spaces
Matching glue for index matching.
Preferably, it is specially centre wavelength 1310nm in the single mode active device, 10 ° -40 ° of far-field emission angle X-direction,
During the Gaussian single mode semiconductor laser of 10 ° -45 ° of Y-direction, W1=2.6 μm of the ladder top face width of the coupled section, ladder top face
H1=4.4 μm of height；Terraced W2=3.3 μm of bottom width, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length.
Preferably, the exiting surface refractive index of the single mode active device is 1.48, then the refractive index of the matching glue is
1.48。
Preferably, the coupled structure being made up of the single mode active device and planar optical waveguide specifically includes EPON optical modes
Block, GPON optical modules；High speed single channel optical module SFP, SFP+ in data communication；Or for 40G, 100G optical transports and
Row module QSFP, QSFP28.
Second aspect, the embodiments of the invention provide a kind of Planar Optical Waveguide Structures, the Planar Optical Waveguide Structures include
For the SiO 2 waveguide of communicating optical signals, specifically：
The SiO 2 waveguide is made up of coupled section and conductive sections；
The coupled section is terraced body structure, wherein, it is ladder top that the coupled section, which is used for single mode active device coupling surface, institute
It is terraced bottom that coupled section, which is stated, with the conductive sections joint face.
Preferably, W1=2.6 μm of ladder top face width, H1=4.4 μm of the terraced apical side height of the coupled section；Terraced bottom width
W2=3.3 μm, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length.
Preferably, single mode active device mounting seat is provided with planar optical waveguide, be provided with the base pad and
Alignment mark.
The third aspect, the embodiment of the present invention additionally provide a kind of coupling process based on planar optical waveguide, planar optical waveguide
In SiO 2 waveguide be made up of coupled section and conductive sections, methods described includes：
The planar optical waveguide is generated, the coupled section is terraced body structure, wherein W1=2.6 μm of ladder top face width, ladder top
H1=4.4 μm of face height；Terraced W2=3.3 μm of bottom width, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length；
Single mode active device mounting seat is generated in the planar optical waveguide, pad and contraposition are provided with the base
Mark；
The single mode active device for confirming selection is specially centre wavelength 1310nm, 10 ° -40 ° of far-field emission angle X-direction, Y side
To 10 ° -45 ° of Gaussian single mode semiconductor laser；
The semiconductor laser is completed into welding according to the alignment mark in the planar optical waveguide.
Preferably, the single mode active device exists default between the two with the planar optical waveguide after the completion of welding
Coupling interstitial spaces d, methods described also includes：
Matching glue is selected according to the refractive index of the filming parameter of laser and SiO 2 waveguide, and uses the matching of selection
Glue fills the coupling interstitial spaces.
Compared with prior art, the beneficial effects of the present invention are：The coupled structure and side that the embodiment of the present invention is proposed
Method can be applied directly to automatic mode and mount laser to planar lightguide circuit PLC, complete laser to PLC
It is passive to light and direct-coupling, and the application of automation equipment can greatly ensure processing quality, shorten to light and welding
Time, so as to reach the purpose for reducing cost.
【Brief description of the drawings】
Fig. 1 is a kind of coupled structure schematic diagram based on planar optical waveguide provided in an embodiment of the present invention；
Fig. 2 is the partial enlarged drawing of A-A ' sectional top views in the just terraced body structure provided in an embodiment of the present invention by Fig. 1；
Fig. 3 is the partial enlarged drawing in B-B ' sections in reference chart 2 in the just terraced body structures of Fig. 1 provided in an embodiment of the present invention；
Fig. 4 is the partial enlarged drawing provided in an embodiment of the present invention for falling A-A ' sectional top views in terraced body structure by Fig. 1；
Fig. 5 is that Fig. 1 provided in an embodiment of the present invention falls in terraced body structure the partial enlarged drawing in B-B ' sections in reference chart 4；
Fig. 6 is a kind of schematic flow sheet of coupling process based on planar optical waveguide provided in an embodiment of the present invention；
Fig. 7 is the partial enlarged drawing of A-A ' sectional top views of the prior art provided in an embodiment of the present invention；
Fig. 8 is the partial enlarged drawing in B-B ' sections in Fig. 7 of the prior art provided in an embodiment of the present invention；
Fig. 9 is a kind of coupled section width provided in an embodiment of the present invention and coupling efficiency corresponding relation figure；
Figure 10 is a kind of coupled section width provided in an embodiment of the present invention with coupling interstitial spaces corresponding relation figure；
Figure 11 is the alignment tolerance figure provided in an embodiment of the present invention obtained based on simulation test.
【Embodiment】
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In addition, as long as technical characteristic involved in each embodiment of invention described below is each other not
Conflict can is formed to be mutually combined.
Convenient in order to be described in various embodiments of the present invention, " highest coupling efficiency " is defined as in operation wavelength, waveguide shape
In the case that shape and interval are fixed, after some time it is possible to reach the highest coupling efficiency from active device to fiber waveguide；" 6dB registration tolerances "
Permissible relative displacement between active device and waveguide when being then more than or equal to 25% (6dB Insertion Loss) for coupling efficiency.This two
Item parameter will be used as weighing the good and bad index of design.
Embodiment 1:
The embodiment of the present invention 1 provides a kind of coupled structure based on planar optical waveguide, and it is active that the structure includes single mode
Device and planar optical waveguide PLC, as shown in figure 1, specifically：
The planar optical waveguide PLC includes the SiO 2 waveguide for communicating optical signals, wherein, the silica ripple
Lead and be made up of coupled section and conductive sections.
Wherein, single mode active device includes but is not limited to fabry-Perot type laser and (Fabry-Perot, is abbreviated as：
FP), (Distributed Feedback Laser, are abbreviated as distributed feedback laser：DFB), Electroabsorption Modulated Laser
(Electlro-absorption Modulated Laser, are abbreviated as：EML), based on semiconductor optical amplifier
(semiconductor opticalamplifier, are abbreviated as：SOA) etc..
The coupled section is just terraced body structure or terraced body structure, wherein, the coupled section and the active device of the single mode
The face that part is coupled is ladder top, and the coupled section and the conductive sections joint face are terraced bottom.As shown in Fig. 2 cut for A-A ' in Fig. 1
The top view in face, which show a kind of just terraced body structural representation.As shown in figure 4, be the top view in A-A ' sections in Fig. 1, its
Give a kind of terraced body structural representation.
It is preset between the single mode active device and the planar optical waveguide and couples interstitial spaces d.
The planar optical waveguide coupled structure that the embodiment of the present invention is proposed can complete laser to PLC it is passive to light and
Direct-coupling, the prior art that compares improve registration tolerance；Raising based on the registration tolerance, can further it mitigate automatic
Change the requirement for craft precision in equipment, shortening can be reached to light and weld interval, and further reduce defect rate, so as to
Reaching reduces the purpose of cost.
, can be in industrial automation in order to ensure the coupled structure based on planar optical waveguide designed by the embodiment of the present invention
By more efficient completion in equipment Manufacture Process, and defect rate can be reduced, a kind of preferable implementation be present, specifically
's：The value of the coupling interstitial spaces d is 5 μm -50 μm, and is filled with the coupling interstitial spaces and is used for refractive index
The matching glue (index matching gel) matched somebody with somebody.The matching glue is used for while index matching is completed, Backup lightpath
Avoid being corroded by the external world.
With reference to the embodiment of the present invention, the coupled apparatus being made up of the single mode active device and planar optical waveguide can be applied
Into various known optical modules, such as：EPON optical modules, GPON optical modules；High speed single channel optical module in data communication
SFP、SFP+；Or for 40G, parallel modules QSFP, QSFP28 of 100G optical transports.
Embodiment 2:
The embodiment of the present invention 1 gives a kind of coupled structure based on planar optical waveguide, next will be in embodiment 1
Used Planar Optical Waveguide Structures give specific elaboration, and the Planar Optical Waveguide Structures include two for communicating optical signals
Silica waveguide, as shown in Figures 2 and 3, specifically：
The SiO 2 waveguide is made up of coupled section and conductive sections；
The coupled section is just terraced body structure or terraced body structure, wherein, the coupled section is used for and the active device of single mode
Part coupling surface is ladder top, and the coupled section and the conductive sections joint face are terraced bottom.
From the process complexity for making the Planar Optical Waveguide Structures, the embodiments of the invention provide a kind of preferable
Implementation, put down relative to four sides at the ladder top and terraced bottom by one group in the just terraced body structure or terraced body structure
Row face and one group of inclined-plane are formed, also, the parallel surface is vertical with the direction of growth of the planar optical waveguide.The preferred implementation side
Case can reduce the technology difficulty for growing the planar optical waveguide.With reference to the embodiment of the present invention, also in the presence of two kinds of optional realizations
Scheme：
The first, in the just terraced body structure or terraced body structure relative to four sides at the ladder top and terraced bottom by
One group of parallel surface and one group of inclined-plane are formed, also, the parallel surface and the horizontal plane of the planar optical waveguide.
Second, in the just terraced body structure or terraced body structure relative to four sides at the ladder top and terraced bottom by
Two groups of inclined-planes are formed.
Above two optional implementation is equally reached the effect of increase registration tolerance, but its manufacture craft
Complexity is relative higher with preferred scheme.
With reference to the embodiment of the present invention, in order to be applied in the coupled structure in embodiment 1, and work is further improved
The efficiency that industry is processed automatically, a kind of preferable implementation be present：Single mode active device installation bottom is provided with planar optical waveguide
, it is provided with pad and alignment mark (alignment mark) on the base.Wherein, single mode active device has accordingly
Pad for eutectic weldering or thermocompression bonding and it is oriented to the alignment mark that matches with the plane light wave.
With reference to the embodiment of the present invention, there is provided one group of achievable parameter, specifically, the ladder top face width of the coupled section
W1=2.6 μm, H1=4.4 μm of terraced apical side height；Terraced W2=3.3 μm of bottom width, terraced H2=4.4 μm of floor height；Terraced body length
L=800 μm of degree.Accordingly, W=3.3 μm of the width of conductive sections, H=4.4 μm of height.
Embodiment 3:
The embodiment of the present invention is except providing the coupled structure described in embodiment 1, the optical plane waveguiding structure described in embodiment 2
Outside, a kind of coupling process based on planar optical waveguide is proposed based on said structure, the SiO 2 waveguide in planar optical waveguide
It is made up of coupled section and conductive sections, as shown in fig. 6, methods described includes：
In step 201, the planar optical waveguide is generated, the coupled section is terraced body structure, wherein ladder top face width W1
=2.6 μm, H1=4.4 μm of terraced apical side height；Terraced W2=3.3 μm of bottom width, terraced H2=4.4 μm of floor height；Terraced body length L
=800 μm.
Preferably, the PLC waveguide in the embodiment of the present invention is silicon based silicon dioxide flush type rectangular waveguide, wherein, coupling
It is refractive index identical covering outside section sandwich layer and conductive sections sandwich layer, refractive index contrast is 0.013 inside and outside sandwich layer.
In step 202, single mode active device mounting seat is generated in the planar optical waveguide, is set on the base
There are pad and alignment mark.
As shown in figure 1, the pad of wherein planar optical waveguide and single mode active device forms binding solder joint after completing welding.
In step 203, the single mode active device for confirming selection is specially centre wavelength 1310nm-1660nm, and far field is sent out
10 ° -40 ° of firing angle X-direction, the Gaussian single mode semiconductor laser of 10 ° -45 ° of Y-direction；
In step 204, the semiconductor laser is completed into welding according to the alignment mark in the planar optical waveguide.
With reference to the embodiment of the present invention, a kind of preferable implementation be present, which more meets industrial automation manufacture
After the completion of welding, default coupling between the two be present with the planar optical waveguide in actual conditions, i.e., described single mode active device
Interstitial spaces d is closed, then methods described also includes after step 204 is completed：
In step 205, matching glue is selected according to the refractive index of the filming parameter of laser and SiO 2 waveguide, and made
The coupling interstitial spaces are filled with the matching glue of selection.
Fig. 7-8 is not to be the planar optical waveguide PLC optimized, wherein W=3.3 μm, H=4.4 μm.If PLC is upper and laser
Any optimization is not done in the waveguide that device (single mode active device) is combined, and as Figure 7-8, front-end and back-end are same in the prior art
Size, then its highest coupling efficiency is only that 25%, 6dB registration tolerances are a point, i.e., being welded and fixed for laser and PLC will
Reach the high degree of accuracy, slightly deviation will not reach the 6dB registration tolerances.
Because coupling efficiency and 6dB registration tolerances are the change in shape with waveguide, the embodiment of the present invention passes through to waveguide
Shape optimizes, and has drawn and has coupled interstitial spaces at 5 μm, adds under the application conditions of matching glue (refractive index 1.48) (wherein,
Laser center wavelength 1310nm, 25 ° × 40 ° of far-field emission angle, exiting surface refractive index are 1.48) optimal waveguide shapes such as Fig. 2
Shown in 3, wherein W1=2.6 μm, H1=4.4 μm；W2=3.3 μm, H2=4.4 μm；L=800 μm.Because plane light wave is conductive
Road PLC on the make, easily realize by the shape of horizontal direction, but is difficult in the shape matching of vertical direction, and the present invention exists
Vertical direction purposefully takes same size, increases tapered transmission line only in horizontal direction and (is extended in horizontal direction, vertical direction
It is contour, the namely mask mask difference in technique), on the premise of PLC manufacture crafts are not increased, improve highest coupling
Efficiency and 6dB registration tolerances.
The embodiment of the present invention 3 only gives a kind of examples of parameters, and the present invention further provides coupling efficiency and coupling
The corresponding relation figure of section duct width is closed (as shown in figure 9, wherein single mode active device relevant parameter and planar optical waveguide
Relevant parameter refers to the present embodiment associated description, here, repeating no more), because coupled section duct width is wide to coupled section waveguide
The influence of degree is related to many-side, including exiting surface refractive index of the refringence of the wavelength of laser, fiber waveguide, laser etc.
Deng, prior art does not have a kind of formula for being capable of the above-mentioned several parametric relationships of direct derivation, therefore, the present invention find couple
In the case that Duan Kuandu (or height) can influence coupling efficiency, relation as shown in Figure 9 is further obtained by simulation means
Curve map, and coupling efficiency as shown in Figure 10 is with coupling interstitial spaces graph of a relation.Those skilled in the art, can be in this base
Belonged on plinth by reasonably deducing obtained technical scheme in invention which is intended to be protected.
Embodiment 4:
The structures and methods proposed with reference to the various embodiments described above of the present invention, corresponding emulation is provided in the present embodiment
As a result, in the simulated environment of the present embodiment, the single mode active device is specially centre wavelength 1310nm, far-field emission angle
25 ° × 40 ° of Gaussian single mode semiconductor laser, in order to which the refractive index with SiO 2 waveguide matches, laser light extraction
Face refractive index is 1.48；W1=2.6 μm of ladder top face width, H1=4.4 μm of the terraced apical side height of the coupled section；Terraced bottom width
W2=3.3 μm, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length；The refractive index of the matching glue is 1.48.
Under the conditions of the composition and waveguide shapes of the present invention, according to simulation result, as shown in figure 11, wherein, different curves
Different coupling efficiencies is correspond to, such as 0.03398 curve shows that its coupling efficiency is 3.398%.We obtain highest coupling
It is that 30%, 6dB registration tolerances are to close efficiency：
X-direction=+/- 0.75 μm；
Y-direction=+/- 0.825 μm；
This result relaxes 6dB registration tolerances significantly.The precision of automatic binding machine commercial at present can reach +/- 0.5 μ
M, result of the invention completely can be complete to mount laser to planar lightguide circuit PLC directly in a manner of automatic
Into laser to the passive to light and direct-coupling of PLC.And the application of automation equipment can greatly ensure processing quality, contracting
It is short to light and weld interval, so as to reach the purpose for reducing cost.
What deserves to be explained is in information exchange, implementation procedure between module, unit in said apparatus and system etc.
Hold, due to being based on same design with the processing method embodiment of the present invention, particular content can be found in the inventive method embodiment
Narration, here is omitted.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of embodiment is to lead to
Program is crossed to instruct the hardware of correlation to complete, the program can be stored in a computer-readable recording medium, storage medium
It can include：Read-only storage (ROM, Read Only Memory), random access memory (RAM, Random Access
Memory), disk or CD etc..
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (8)
- A kind of 1. coupled structure based on planar optical waveguide, it is characterised in that the coupled structure include single mode active device and Planar optical waveguide, specifically：The planar optical waveguide includes the SiO 2 waveguide for communicating optical signals, wherein, the SiO 2 waveguide is by coupling Close section and conductive sections are formed；The coupled section is just terraced body structure or terraced body structure, wherein, the coupled section and the single mode active device phase The face of coupling is ladder top, and the coupled section and the conductive sections joint face are terraced bottom；It is preset between the single mode active device and the planar optical waveguide and couples interstitial spaces；The single mode active device is specially centre wavelength 1310nm, 25 ° of far-field emission angle X-direction, the Gaussian that 40 ° of Y-direction Single mode semiconductor laser, W1=2.6 μm of ladder top face width, H1=4.4 μm of the terraced apical side height of the coupled section；Terraced bottom surface is wide W2=3.3 μm of degree, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length.
- 2. coupled structure according to claim 1, it is characterised in that the value of the coupling interstitial spaces d is 5 μm of -50 μ M, and the matching glue for index matching is filled with the coupling interstitial spaces.
- 3. coupled structure according to claim 2, it is characterised in that the exiting surface refractive index of the single mode active device is 1.48, then the refractive index of the matching glue is 1.48.
- 4. according to the coupled structure described in claim 1,2 or 3, it is characterised in that by the single mode active device and planar light The coupled structure that waveguide is formed specifically includes EPON optical modules, GPON optical modules；High speed single channel optical module in data communication SFP、SFP+；Or for 40G, parallel modules QSFP, QSFP28 of 100G optical transports.
- 5. a kind of Planar Optical Waveguide Structures, it is characterised in that the Planar Optical Waveguide Structures include two for communicating optical signals Silica waveguide, specifically：The SiO 2 waveguide is made up of coupled section and conductive sections；The coupled section is just terraced body structure or terraced body structure, wherein, the coupled section is used for and single mode active device coupling Conjunction face is ladder top, and the coupled section and the conductive sections joint face are terraced bottom；W1=2.6 μm of ladder top face width, H1=4.4 μm of the terraced apical side height of the coupled section；Terraced W2=3.3 μm of bottom width, Terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length.
- 6. Planar Optical Waveguide Structures according to claim 5, it is characterised in that it is active that single mode is provided with planar optical waveguide Device mounting seat, pad and alignment mark are provided with the base.
- 7. a kind of coupling process based on planar optical waveguide, it is characterised in that the SiO 2 waveguide in planar optical waveguide is by coupling Close section and conductive sections are formed, methods described includes：The planar optical waveguide is generated, the coupled section is terraced body structure, and wherein W1=2.6 μm of ladder top face width, ladder top face are high H1=4.4 μm of degree；Terraced W2=3.3 μm of bottom width, terraced H2=4.4 μm of floor height；Terraced L=800 μm of body length；Single mode active device mounting seat is generated in the planar optical waveguide, pad and register guide are provided with the base Note；The single mode active device for confirming selection is specially centre wavelength 1310nm, 25 ° of far-field emission angle X-direction, 40 ° of Y-direction Gaussian single mode semiconductor laser；The semiconductor laser is completed into welding according to the alignment mark in the planar optical waveguide.
- 8. coupling process according to claim 7, it is characterised in that the single mode active device and the planar optical waveguide After the completion of welding, default coupling interstitial spaces between the two be present, methods described also includes：Matching glue is selected according to the refractive index of the filming parameter of laser and SiO 2 waveguide, and filled out using the matching glue of selection Fill the coupling interstitial spaces.
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| CN201610326883.4A CN105759374B (en) | 2016-05-17 | 2016-05-17 | A kind of Planar Optical Waveguide Structures and its coupled structure and coupling process |
| PCT/CN2016/110358 WO2017197881A1 (en) | 2016-05-17 | 2016-12-16 | Planar optical-waveguide structure, and coupling structure and coupling method thereof |
| US16/192,845 US10656350B2 (en) | 2016-05-17 | 2018-11-16 | Planar optical waveguide structure, and coupling structure thereof and coupling method thereof |
| US16/843,882 US11181702B2 (en) | 2016-05-17 | 2020-04-09 | Planar optical waveguide structure, and coupling structure thereof and coupling method thereof |
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| CN106680935B (en) * | 2016-11-24 | 2019-03-05 | 中国电子科技集团公司第五十五研究所 | Efficient coupling structure and production method between a kind of silicon substrate optical waveguide |
| CN108398745B (en) * | 2017-02-07 | 2019-09-13 | 武汉光迅科技股份有限公司 | A kind of structure, module and the manufacturing method of planar optical waveguide substrate |
| CN109669248A (en) * | 2017-10-13 | 2019-04-23 | 苏州旭创科技有限公司 | Optical waveguide coupled encapsulating structure, installation method and optical module |
| CN110401101A (en) * | 2019-07-26 | 2019-11-01 | 中国科学院半导体研究所 | The coupled structure and coupling process of semiconductor laser chip and silicon optical chip |
| CN111897062B (en) * | 2020-07-28 | 2022-03-08 | 武汉电信器件有限公司 | Optical path coupling method and device and storage medium |
| CN112904499A (en) * | 2021-01-28 | 2021-06-04 | 西安奇芯光电科技有限公司 | Semiconductor laser and planar optical waveguide coupling structure, optical path system and manufacturing method |
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| JP3815271B2 (en) * | 2001-08-02 | 2006-08-30 | 日本電気株式会社 | Optical coupler |
| JP4859677B2 (en) * | 2004-02-18 | 2012-01-25 | カラー チップ （イスラエル） リミテッド | Photovoltaic module fabrication system and method |
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| KR101199302B1 (en) * | 2009-10-13 | 2012-11-09 | 한국전자통신연구원 | Optical Device and Method of Fabricating the Same |
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2016
- 2016-05-17 CN CN201610326883.4A patent/CN105759374B/en active Active
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