JP6190325B2 - Optical semiconductor device mounting method and apparatus - Google Patents

Description

  The present invention relates to an optical semiconductor element mounting method and apparatus for mounting an optical semiconductor element on a substrate by passive alignment.

  Due to the rapid increase in traffic due to high-definition image distribution on the Internet in recent years, it has become an urgent issue to increase the speed and capacity of networks in both trunk and metro access systems. In addition, by optimizing the signal wiring that connects the devices in the data center and the wiring in the device, the power consumption of the entire data center and the transmission device is greatly reduced and the signal processing capability is dramatically improved. Efforts are also being actively made. In response to this growing need, optical modules used in devices that transmit and receive optical signals are required to achieve both high speed, high performance, and small size, low cost, and low power consumption. Yes.

  On the other hand, when assembling optical modules, it is important to optically couple optical semiconductor elements such as semiconductor lasers, optical amplifiers, and photodiodes with optical fibers and optical waveguides fabricated on a flat substrate with high efficiency. It becomes a difficult task.

  Therefore, in a light emitting device such as a semiconductor laser, first, an optical device is mounted and fixed on a package. Next, current is injected into the element to emit light, and the end face of the optical fiber or optical waveguide is gradually brought closer to the end face of the light emitting element, thereby coupling the light output from the optical element to the optical fiber or optical waveguide. The optical output power coming out from the other end face of the optical fiber or optical waveguide can be observed by an optical power meter, and the position of the optical fiber or optical waveguide is adjusted so that the indicated value of the optical power meter becomes large (optical It is common to use a method of fixing the optical fiber or the optical waveguide at the position where the indicated value becomes the largest after the axial alignment. This mounting method is called active alignment.

  However, in this method, since it is necessary to align the optical element once it is mounted on a package, subcarrier, etc., and wire bonding is performed, it may take time and effort to assemble individual modules. This is a challenge for reducing the size and cost of optical modules.

  Therefore, as one of the methods for drastically reducing the size and cost of an optical module, an optical semiconductor element such as a semiconductor laser, an optical amplifier, and a photodiode can be used without performing the optical axis alignment described above. A method of flip-chip mounting an optical semiconductor element on a mounting substrate by superimposing alignment marks formed on both the mounting substrate and a mounting substrate using a CCD microscope or the like has been proposed (for example, patents). Reference 1, Patent Document 2, and Non-Patent Document 1).

  This mounting method is called passive alignment, and as a method for mounting an optical semiconductor element on a mounting substrate in the same manner as flip-chip mounting electronic components such as ICs, chip resistors, and chip capacitors on a printed circuit board, This is effective for shortening the module assembly process and assembly time.

  In addition, due to the downsizing and cost reduction of digital video cameras and the development of image analysis technology, a technology has been proposed to create a new image in real time by comprehensively analyzing images captured from multiple cameras. It is used (for example, refer to Patent Document 3). As an example, an automobile parking support system called an around view monitor system is known. As described above, a method of realizing an image that cannot be realized in an actual space in real time in a virtual space by image analysis technology may be applied in many fields in the future. Applications are also expected.

Japanese Patent No. 2546506 JP-A-8-111600 Japanese Patent No. 4156181

Toshikazu Hashimoto et al., “Multichip optical hybrid integration technique with planar lightwave circuit platform,” IEEE Journal of Lightwave Technology, Vol.16, No.7, July, 1998, pp.1249-1258

  However, when using the above-described passive alignment mounting method using the alignment mark, a process of forming a mark on the surface of the mounted optical semiconductor element is required, and the optical semiconductor element suitable for the mounting apparatus and mounting substrate Therefore, there is a problem that the cost of the optical semiconductor element is increased.

  Also, without using the alignment mark, the electrode pattern formed on the surface of the optical semiconductor element is read using a camera such as a CCD microscope, and the optical axis position of the emitted light of the optical semiconductor element is estimated from the information. A method of mounting on a mounting board is also used. However, compared to the mounting method using active alignment, the accuracy of optical axis alignment between the optical semiconductor element and the optical fiber / optical waveguide is deteriorated, resulting in a decrease in optical output and characteristic variation of the optical module. There is a problem.

  In addition, due to the recent progress of high-speed and large-capacity networks and increasing demand for low power consumption, there has been a strong demand for high-speed optical modules and high output with low current operation. For this reason, in an optical semiconductor element, it is essential to shorten the element length and reduce the size of the electrode as much as possible in order to reduce the parasitic capacitance of the modulation operation unit. This makes it difficult to provide a space for forming alignment marks on the element surface.

  Furthermore, in order to realize low current operation and high output of the optical module, it is necessary to increase the coupling efficiency between the light emitted from the optical semiconductor element and the optical fiber / optical waveguide as much as possible. It is difficult to use a conventional passive alignment mounting method in which it is difficult to improve accuracy with a high yield.

  In order to compensate for such a decrease in the accuracy of the optical axis alignment, an area where the spot size can be converted is added to the exit end face part of the optical semiconductor element or the incident end face part of the optical waveguide to allow for the optical axis misalignment. Studies to increase the degree are also being conducted. However, the manufacturing process of the optical semiconductor element and the optical waveguide is complicated here, and the manufacturing cost is increased.

  An object of the present invention is to provide an optical semiconductor element mounting method and apparatus capable of improving the coupling efficiency between an optical semiconductor element and an optical fiber / optical waveguide with a high yield in a passive alignment mounting method.

  In order to solve the above problems, the present invention is to electrically connect an optical semiconductor element having a light emitting element part to a wiring formed on a substrate and to optically couple with an optical waveguide or an optical fiber. An optical semiconductor element mounting apparatus for mounting on a substrate, wherein an element supply stage on which the optical semiconductor element is placed and a first element electrode of the optical semiconductor element placed on the element supply stage are formed A first camera for photographing a surface and a bonding tool capable of moving the optical semiconductor element to an arbitrary position in a predetermined coordinate system by sucking and fixing the surface on which the first element electrode is formed. A bonding tool having a bonding tool electrode that is electrically connected to the first element electrode when the optical semiconductor element is sucked and fixed before the optical semiconductor element is sucked and fixed to the bonding tool. A second camera for photographing a surface on which the second element electrode is formed, facing the surface on which the first element electrode of the optical semiconductor element is formed, an element end face observation stage having a stage electrode, and the stage electrode And a current source electrically connected to the bonding tool electrode and the stage electrode, wherein the optical semiconductor element is connected to the element end face observation stage by the bonding tool. When the second element electrode is pressed against the stage electrode and electrically connected to the stage electrode, a current source that supplies current emitted from the optical semiconductor element and the optical semiconductor that emits light on the element end face observation stage A fourth camera for photographing a first emission end face of the element, wherein the fourth camera is sensitive to a wavelength band of light emitted from the optical semiconductor element; A fifth camera for photographing a second emission end face facing the first emission end face of the optical semiconductor element that emits light on a child end face observation stage, wherein the wavelength band of the light emitted from the optical semiconductor element A fifth camera having sensitivity to the element, an element mounting stage on which the substrate is placed and capable of heating and cooling the substrate, and a substrate electrode formed on the substrate placed on the element mounting stage And a sixth camera for photographing an optical waveguide integrally formed with the substrate or an optical fiber fixed to the substrate, and images of the optical semiconductor element and the substrate photographed by the first to sixth cameras. By acquiring and synthesizing, the outer shape, outer dimension, exit position, exit angle, exit direction, exit beam intensity distribution of the exit light on the first and second exit end faces are obtained. The position of the substrate electrode, the shape, and the position of the incident end face of the optical waveguide or optical fiber are mapped to the predetermined coordinate system, and the optical semiconductor element is placed on the element end face observation stage by the bonding tool. Two element electrodes are electrically connected to the stage electrode, the first exit end face and the imaging surface of the fourth camera are parallel, and the second exit end face and the fifth camera are imaged. A first optimal position of the optical semiconductor element that is parallel to a plane is calculated, and when the optical semiconductor element is moved to the first optimal position by the bonding tool, the first and second optical semiconductor elements are 2 on the first and second output end faces based on the observation results of the outer shape, the outer dimensions, the outgoing position of the outgoing light, and the intensity distribution of the outgoing beam. The emission angle, the emission direction, and the intensity distribution of the emitted beam at a position away from the first and second emission end faces by a predetermined distance are calculated, and the optical semiconductor element is placed on the element mounting stage by the bonding tool. When the light beam is placed on the substrate, the emission angle of the outgoing beam at the first and second outgoing end faces, the outgoing direction, the calculation result of the intensity distribution of the outgoing beam at a position away from the outgoing end face by a predetermined distance, and Optical coupling efficiency between the optical semiconductor element and the optical waveguide or optical fiber in the position coordinates of the incident end face of the optical waveguide or optical fiber and the position coordinates when the optical semiconductor element is mounted on the substrate. And an image analysis device for calculating.

  According to a second aspect of the present invention, in the optical semiconductor element mounting apparatus according to the first aspect, when the bonding tool places the optical semiconductor element on the substrate placed on the element mounting stage, the image analyzing apparatus. The second element electrode is electrically connected to the substrate electrode, and the incident end face of the optical waveguide or the optical fiber is separated from at least one of the first and second emitting end faces by a predetermined distance. Calculating a second optimum position of the optical semiconductor element at which the coupling efficiency between the optical waveguide or optical fiber and the light emitted from the optical semiconductor element is highest, and the optical semiconductor element is the bonding tool When the element mounting stage is moved to the second optimum position by the bonding tool, the optical semiconductor element is placed on the substrate by the bonding tool. When constant, heating said element mounting stage to a predetermined temperature, characterized in that.

  According to a third aspect of the present invention, in the optical semiconductor element mounting apparatus according to the first or second aspect, the image analysis apparatus has a predetermined length placed on the element supply stage by the first and second cameras. The reference measurement object was photographed, the reference measurement object placed on the element end face observation stage was photographed with the third to fifth cameras, and placed on the element mounting stage with the sixth camera. The reference measurement object is photographed, and the dimensions of the reference measurement object in the images photographed at the photographing magnifications of the first to sixth cameras are obtained and stored in advance, and the reference measurement object and From these comparisons, the dimensions of the measurement object placed on the element supply stage, the element end face observation stage, and the element mounting stage are calculated.

  According to a fourth aspect of the present invention, in the optical semiconductor element mounting apparatus according to any one of the first to third aspects, the optical semiconductor element is formed such that a p-type semiconductor and an n-type semiconductor sandwich an active layer in a horizontal direction. It is a lateral injection type semiconductor laser arranged.

  According to a fifth aspect of the present invention, an optical semiconductor element having a light emitting element portion is electrically connected to a wiring formed on a substrate and is optically coupled to an optical waveguide or an optical fiber on the substrate. An optical semiconductor element mounting method for mounting, comprising: disposing the optical semiconductor element on an element supply stage; and using a first camera, a first of the optical semiconductor elements placed on the element supply stage. Photographing the surface on which the element electrode is formed, acquiring an image of the optical semiconductor element photographed by the first camera, and setting the outer shape and outer dimension of the optical semiconductor element to the predetermined coordinate system Using a first mapping step for mapping and a bonding tool, the surface on which the first element electrode is formed is fixed by suction, and the optical semiconductor element is moved to a first position in a predetermined coordinate system. A second element electrode facing the surface on which the first element electrode of the optical semiconductor element is fixed to the bonding tool at the first position by using the second camera and the second camera. A step of photographing the formed surface; and a second step of acquiring an image of the optical semiconductor element photographed by the second camera and mapping an outer shape and an outer dimension of the optical semiconductor element to the predetermined coordinate system. Mapping step, using a third camera, photographing a surface on which the stage electrode of the element end face observation stage is formed, obtaining an image of the stage electrode photographed by the third camera, A third mapping step for mapping the outer shape and outer dimension of the stage electrode to the predetermined coordinate system; and the bonding tool converts the optical semiconductor element to the element When placed on a plane observation stage, the second element electrode is electrically connected to a stage electrode of the element end face observation stage, the first emission end face and the imaging surface of the fourth camera are parallel, and A step of calculating a first optimum position of the optical semiconductor element in which the second emission end face and the imaging surface of the fifth camera are parallel; and suction fixing to the bonding tool at the first optimum position. And a step of pressing the second element electrode of the optical semiconductor element against a stage electrode of the element end face observation stage, and the bonding tool has an electrical connection with the first element electrode when the optical semiconductor element is suction fixed Supplying a current between the bonding tool electrode and the stage electrode, causing the optical semiconductor element to emit light, and using the fourth camera, The step of photographing the first emission end face of the optical semiconductor element that emits light on the element end face observation stage, and the first of the optical semiconductor element that emits light on the element end face observation stage using the fifth camera Photographing the second exit end face opposite to the exit end face, obtaining images of the optical semiconductor elements photographed by the fourth and fifth cameras, and at the first and second exit end faces A fourth mapping step for mapping the exit position, exit angle, exit direction, and exit beam intensity distribution of the exit light to the predetermined coordinate system; photographing the first exit end face; and the second exit end face On the basis of the observation results of the outer shape, the outer dimensions, the outgoing position of the outgoing light, and the intensity distribution of the outgoing beam at the first and second outgoing end faces of the optical semiconductor element in the step of photographing Calculating the exit beam exit angle at the first and second exit end faces, the exit direction, and the intensity distribution of the exit beam at a position away from the first and second exit end faces by a predetermined distance; Placing the substrate on an element mounting stage capable of heating and cooling the substrate, and using a sixth camera, a substrate electrode formed on the substrate placed on the element mounting stage And photographing the optical waveguide formed integrally with the substrate or the optical fiber fixed to the substrate, obtaining an image of the substrate photographed by the sixth camera, and the position, shape of the substrate electrode, A fifth mapping step for mapping the position of the incident end face of the optical waveguide or optical fiber to the predetermined coordinate system; and When placed on the substrate placed on the element mounting stage by a tool, the exit beam at the first and second exit end faces, the exit direction, the exit direction, and the exit beam at a position away from the exit end face by a predetermined distance The optical semiconductor element and the optical waveguide or light in the calculation result of the intensity distribution, the position coordinates of the incident end face of the optical waveguide or optical fiber, and the position coordinates when the optical semiconductor element is mounted on the substrate Calculating the optical coupling efficiency with the fiber.

  According to a sixth aspect of the present invention, in the optical semiconductor element mounting method according to the fifth aspect, when the bonding tool places the optical semiconductor element on the substrate placed on the element mounting stage, the second An element electrode is electrically connected to the substrate electrode, and the optical waveguide or the optical fiber has an incident end face and at least one of the first and second exit end faces separated by a predetermined distance. Alternatively, a step of calculating a second optimum position of the optical semiconductor element that provides the highest coupling efficiency between the optical fiber and the light emitted from the optical semiconductor element, and the optical semiconductor element is the second by the bonding tool. And fixing the optical semiconductor element on the substrate by the bonding tool. When, characterized in that it further comprises heating said element mounting stage to a predetermined temperature, the.

  According to a seventh aspect of the present invention, in the optical semiconductor element mounting method according to the fifth or sixth aspect, the first to fifth mapping steps are performed on the element supply stage by the first and second cameras. A reference measurement object having a predetermined length is photographed, the reference measurement object placed on the element end face observation stage is photographed by the third to fifth cameras, and the element is photographed by the sixth camera. The reference measurement object placed on the mounting stage is photographed, and the dimensions of the reference measurement object in the images photographed for each photographing magnification of the first to sixth cameras are obtained and stored in advance, The method includes a step of calculating dimensions of the measurement object placed on the element supply stage, the element end face observation stage, and the element mounting stage from comparison with a reference measurement object.

  According to an eighth aspect of the present invention, in the optical semiconductor element mounting method according to any of the fifth to seventh aspects, the optical semiconductor element has a shape in which a p-type semiconductor and an n-type semiconductor sandwich an active layer in a horizontal direction. It is a lateral injection type semiconductor laser arranged.

  The present invention uses a camera to capture the position and shape of light output from both end faces of an optical semiconductor element as image information with high accuracy, thereby optically coupling an optical waveguide or optical fiber to each mounted element. An optimum mounting position on the mounting substrate is required, and an optical module with high coupling efficiency can be produced with higher accuracy than the conventional mounting method using passive alignment.

It is a figure which shows the outline of the optical semiconductor element mounting method and apparatus which concern on one Embodiment of this invention. 1 is a schematic view of a DFB laser chip 1 mounted in a first embodiment of the present invention. It is a schematic diagram of the image of the surface in which the n side electrode of the DFB laser chip 1 of this embodiment coordinated by the image analyzer 16 is formed. It is a schematic diagram of the image of the surface on which the p-side electrode 24 of the DFB laser chip 1 of the present embodiment coordinated by the image analysis device 16 is formed. 3 is a schematic diagram of an image of the upper surface of the element end surface observation stage 10 that has been coordinated by the image analysis device 16. FIG. 6 is a schematic diagram of an image that is positioned when a DFB laser chip is mounted on an element end face observation stage in the image analysis device 16. (A) is a schematic diagram when a DFB laser chip is mounted on an element end face observation stage of an optical semiconductor element mounting apparatus according to an embodiment of the present invention, and (b) is a schematic diagram of a tip portion of a bonding tool. is there. It is a schematic diagram of the 1st output end surface of the DFB laser chip 1 mounted in this embodiment. It is a schematic diagram of the 2nd radiation | emission end surface of the DFB laser chip 1 mounted in this embodiment. It is a sketch which shows the relationship between the electrode shape of the DFB laser chip 1, the optical axis, and the emission area and emission area of emitted light. 2 is a schematic diagram of images of an optical semiconductor element mounting substrate 14 and a DFB laser chip 1 that are coordinated by an image analysis device 16. FIG. 4 is a schematic diagram of a cross section (y-z plane) in the height direction at the center of the optical waveguide 15 when the DFB laser chip 1 is mounted on the optical semiconductor element mounting substrate 14. FIG. It is a schematic diagram of an image in which the positional relationship between the optical semiconductor element mounting substrate 14 and the DFB laser chip 1 is coordinated in the horizontal direction (xy plane). It is a general-view figure of the EA-DFB laser chip 1 mounted in the 2nd Embodiment of this invention. (A) is a schematic diagram when an EA-DFB laser chip is mounted on the element end face observation stage of the optical semiconductor element mounting apparatus according to the second embodiment of the present invention, and (b) is the tip of the bonding tool. FIG. It is a general-view figure of the lateral injection type semiconductor laser chip 1 mounted in the 3rd Embodiment of this invention. (A) is a schematic diagram when a lateral injection type semiconductor laser chip is mounted on an element end face observation stage of an optical semiconductor element mounting apparatus according to a third embodiment of the present invention, and (b) is a tip of a bonding tool. It is a schematic diagram of a part.

  Hereinafter, embodiments of the present invention will be described in detail.

(First embodiment)
FIG. 1 schematically shows an optical semiconductor element mounting method and apparatus according to an embodiment of the present invention. Reference numeral 1 denotes a DFB laser chip whose output light wavelength is 1.3 μm band capable of direct modulation operation at 10 Gbit / s, and 2, 6 to 9 and 12 are first to sixth CCD microscopes, and at least third and third Four CCD microscopes 8 and 9 are CCD microscopes having sensitivity to light having a wavelength of 1.3 μm band. 3 is an element supply stage, 4 is a chip tray in which DFB laser chips are arranged in a fixed direction, and 5 is a bonding tool that can suck and lift the DFB laser chip 1. 10 is an element end face observation stage, 11 is a current source capable of DC output or pulse output, and 13 is an element mounting stage. 14 is an optical semiconductor element mounting substrate called a PLC (Planar Lightwave Circuit) platform in which an optical waveguide is formed by laminating SiO ₂ on a silicon bench, and 15 is an optical waveguide formed on the PLC platform.

  Also, the image information captured from the first to sixth CCD microscopes 2, 6, 7-9, and 12 in FIG. 1 is captured by the image analyzer 16 and converted into digital data, and integrated analysis processing is performed. Is done.

  The first to sixth CCD microscopes 2, 6, 7 to 9 and 12 may be used by moving one CCD microscope, or a plurality of CCD microscopes may be prepared separately. .

  Further, when a laser element having another oscillation wavelength is mounted instead of the DFB laser chip 1, the laser element having the third and fourth CCD microscopes 8 and 9 has sensitivity in the wavelength band of the laser light emitted. Make things.

  In each CCD microscope, an object to be measured (dimension standard) whose length is known in advance is placed on each stage, and a dimensional standard in an image taken for each imaging magnification of each microscope. The dimensions of the measurement object on each stage can be calculated by obtaining the dimensions of the device and inputting them to the image analysis device 16.

FIG. 2 shows an overview of the DFB laser chip 1 mounted in this embodiment. 17 is a p-type InP cladding layer, 22 is a semi-insulating InP buried layer doped with Fe, 18 and 20 are InGaAsPSCH layers, 19 is an InGaAsP active layer, 21 is an n-type InP substrate, and 23 is an insulating film (SiO ₂ ). , 24 is a p-side electrode (Au), and 25 is an n-side electrode (Au). Further, the device length is about 200 μm, the width of the device is about 250 μm, and the thickness of the device is about 100 μm.

  In this embodiment, first, the DFB laser chips 1 are accommodated side by side on the chip tray 4 so that the p-side electrode 24 faces downward. Thereafter, the chip tray 4 is placed on the element supply stage 3 and is sucked and fixed to the element supply stage 3. After that, implementation is performed according to the following procedure.

  (1) Using the first CCD microscope 2 installed on the element supply stage 3, the arrangement of each DFB laser chip 1 on the chip tray 4 is captured as an image and connected to the first CCD microscope 2. The image analysis device 16 coordinates the shape, position, and dimensions of each DFB laser chip 1. FIG. 3 schematically shows an image of the surface on which the n-side electrode of the DFB laser chip 1 of the present embodiment coordinated by the image analysis device 16 is formed. In this embodiment, the position of one corner of the DFB laser chip is the origin. From this image, the length (a) in the x-axis direction and the length (b) in the y-axis direction of the DFB laser chip are calculated, and the center position 26 of the n-side electrode 25 is calculated. Next, the outline 27 of the suction position of the bonding tool 5 is determined so that the center of the tip portion of the bonding tool 5 overlaps the center position 26 of the n-side electrode 25. Similarly, the contour of the upper surface of each DFB laser chip 1 arranged on the chip tray 4 is mapped to the mapped coordinate system.

  (2) Using the coordinated position information, the bonding tool 5 is moved to the center position of each DFB laser chip 1 on the chip tray to attract the DFB laser chip 1 and lift it from the tray.

  (3) The surface on which the DFB laser chip 1 adsorbed by the bonding tool 5 is transported onto the second CCD microscope 6 and the p-side electrode of the DFB laser chip 1 is formed using the second CCD microscope 6 The shape, position, and dimensions of the p-side electrode are taken as image information, and the information is coordinated by the image analysis device 16. That is, the surface on which the electrode is formed and the electrode outline are mapped to a coordinate system in which the outline of the upper surface of the DFB laser chip 1 is mapped or a coordinate system in which a relative positional relationship with the coordinate system is defined. FIG. 4 schematically shows an image of the surface on which the p-side electrode 24 of the DFB laser chip 1 of the present embodiment coordinated by the image analysis device 16 is formed.

  (4) Using the third CCD microscope 7, the shapes, positions, and dimensions of the electrodes 28 and 29 formed on the element end face observation stage 10 are captured as image information, and the information is coordinated by image analysis. . That is, at least the contour of the electrode formed on the element end face observation stage is mapped to a coordinate system common to the DFB laser chip adsorbed to the tip of the bonding tool 5. FIG. 5 schematically shows an image of the upper surface of the element end face observation stage 10 that has been coordinated by the image analysis device 16. In this embodiment, the center position 30 of the electrode 28 is calculated in advance as information used for alignment when the element is mounted on the element end face observation stage. FIG. 6 schematically shows an image that is positioned when the DFB laser chip is mounted on the element end face observation stage in the image analysis device 16.

  However, there is only one p-side electrode 24 of the DFB laser chip 1 used in the present embodiment. Therefore, the electrode patterns 28 and 29 formed on the element end face observation stage also become one electrode. Since such a pattern may be used, it is not necessary to accurately align the electrode patterns when mounting elements on the stage. Therefore, the step of calculating the center position 30 of the electrode 28 in advance can be omitted.

  (5) The DFB laser chip 1 adsorbed by the bonding tool 5 is transported onto the element end face observation stage 10 and the bonding tool is lowered so that the p-side electrode of the DFB laser chip 1 is electrically connected to the electrode on the element end face observation stage 10. Press to connect. FIG. 7A shows a schematic diagram when the DFB laser chip is mounted on the element end face observation stage, and FIG. 7B shows a schematic diagram of the tip of the bonding tool. Note that reference numeral 36 in FIG. 7 represents the shape (near field pattern) of the emission region of the laser light on the first emission end face 34. In addition, since the light emitted from the first emission end face 34 is refracted at the emission end face that is a boundary between the semiconductor and air, the light spreads away from the first emission end face 34. Reference numeral 37 in FIG. 7 represents the shape of a radiation region (far field pattern) that spreads at a position away from the first emission end face 34. The direction in which the emitted light is emitted (the optical axis of the emitted light) 38 is the center of the first emission region 36 on the first emission end surface 34 and the center of the emission region 37 at a position away from the first emission end surface. It becomes a straight line connecting The direction 38 in which the emitted light is emitted is a straight line connecting the center of the second emission region 39 and the center of the emission region 36 on the second emission end surface 35 (the emission end surface opposite to the first emission end surface 34). 41 (optical axis of guided light in the DFB laser chip) and the refractive index of each semiconductor layer (17, 18, 19, 20, 21, 22 in FIG. 2) included in the first emission region 36 Calculated using the equivalent refractive index and the refractive index of air.

  At this time, the orientation of the bonding tool 5 is adjusted so that the side surfaces 34 and 35 of the DFB laser chip 1 and the imaging surfaces (lens surfaces) of the fourth and fifth CCD microscopes 8 and 9 are horizontal. . Instead of adjusting the orientation of the bonding tool 5, the element end face observation stage 10 may be rotated, or the positions of the fourth and fifth CCD microscopes 8 and 9 may be adjusted.

  Further, instead of leveling the both end surfaces of the DFB laser chip 1 and the imaging surfaces (lens surfaces) of the fourth and fifth CCD microscopes 8 and 9, the image analysis device 16 may correct the image.

  Further, by attaching an optical system capable of observing the light intensity distribution at an arbitrary position in front of the fourth CCD camera 8, both the emission region 36 and the radiation region 37 may be observed. In this case, the direction 38 in which the emitted light is radiated can be accurately obtained without using the fifth CCD camera 9.

  (6) The DC current source 11 connected to the wiring 32 from the electrode 31 formed at the tip of the bonding tool 5 and the wiring 29 from the electrode 28 on the element end face observation stage is operated, and the threshold of the DFB laser chip 1 is operated. A current slightly larger than the current value (15 mA in this embodiment) is passed through the DFB laser chip 1 to emit the laser.

  (7) The image information observed by the fourth and fifth CCD microscopes 8 and 9 is captured in a state where light is emitted from both end faces 34 and 35 of the DFB laser chip 1, and the emission end faces 34 and 35 are captured. The information (d to I in FIG. 8 and j to o in FIG. 9) necessary for defining the shape and size of the light emitted from the center and the center position is coordinated. The shape, size, and center position of the light emitted from the emission end faces 34 and 35 are obtained by photographing the emission light at the end face of the DFB laser chip 1 with a CCD camera, analyzing the region with the image analysis device 16, and determining the contour. It is obtained by extracting. 8 and 9 are schematic views of the emission end face of the DFB laser chip 1 mounted in this embodiment.

  (9) The image information taken in from the first, second, fourth, and fifth CCD microscopes 2, 6, 8, and 9 is analyzed in an integrated manner by the image analysis device 16, whereby the DFB laser chip 1. Are mapped to the same coordinate system. FIG. 10 is a sketch diagram showing the relationship between the electrode shape of the DFB laser chip 1, the optical axis, and the emission region of the emitted light.

  The spread angle (refractive angle) of the light emitted from the DFB laser chip emission end faces 34 and 35 in FIG. 10 is an equivalent refractive index determined in advance by the semiconductor layer composition around the active layer (waveguide layer) of the DFB laser. It is obtained by inputting to the analysis device 16.

  In addition, in the image analysis device 16, the directions in which the emitted light is emitted (optical axes of the emitted light) 38 and 40 are straight lines 41 (guided light in the DFB laser chip) connecting the center of the emission region 36 and the center of the emission region 39. Is obtained from the angle formed by the exit end faces 34 and 35 and the equivalent refractive index.

  (10) Using the sixth CCD microscope 12, the shape and position of the electrodes formed on the optical semiconductor element mounting substrate 14 (PLC platform) in which the optical waveguide 15 sucked and fixed on the element mounting stage 13 is laminated. Then, the dimensions and the position on the incident end face of the optical waveguide are taken in as image information, and the information is coordinated by image analysis. That is, the contour of the electrode formed on the optical semiconductor element mounting substrate 14 is mapped to a coordinate system in which the electrode shape of the DFB laser chip 1 is mapped with the optical axis 38 of the emitted light and the emission region 37 of the emitted light. FIG. 11 schematically shows images of the optical semiconductor element mounting substrate 14 and the DFB laser chip 1 that are coordinated by the image analysis device 16. FIG. 12 schematically shows a cross section (yz plane) in the height direction at the center of the optical waveguide 15 when the DFB laser chip 1 is mounted on the optical semiconductor element mounting substrate 14. is there.

  In the optical semiconductor element mounting substrate 14 in this embodiment, since the optical waveguide and the substrate are integrated, the position of the light traveling direction (optical axis) can be adjusted in the height (z-axis) direction. Have difficulty. Therefore, as shown in FIG. 12, in the height direction, the position of the optical axis 42 of the optical waveguide 15 (the center of the waveguide cross section) on the optical semiconductor element mounting substrate 14 and the DFB laser chip 1 are mounted on the optical semiconductor element in advance. By designing each of the optical semiconductor element mounting substrate 14 and the DFB laser chip 1 so that the central position 45 of the active layer 19 when mounted on the substrate 14 coincides, position adjustment in the height direction can be omitted. I have to.

  In FIG. 13, in the horizontal direction (xy plane), the optical axis 42 of the optical waveguide 15 in the optical semiconductor element mounting substrate 14 and the optical axis 38 of the light emitted from the first emission end face 34 of the DFB laser chip 1 coincide. The positional relationship between the optical semiconductor element mounting substrate 14 and the DFB laser chip 1 for doing so is obtained by analysis by the image analysis device 16 and schematically shows an example of a coordinated image.

  At this time, information such as the height 46 from the surface of the electrode formed on the optical semiconductor element mounting substrate to the center position of the optical waveguide and the equivalent refractive index of the core and cladding of the PLC optical waveguide are input to the image analyzer in advance. Keep it. Further, in order to prevent the first emission end face 34 of the DFB laser chip 1 from coming into contact with the optical semiconductor element mounting substrate and being damaged, the optical semiconductor element mounting board from the center of the first emission end face 34 of the DFB laser chip 1. The distance in the y direction to 14 end faces is set to 10 μm.

  In FIG. 13, the angle formed between the guided light in the DFB laser chip and the first emission end face 34 is not 90 degrees (perpendicular), so that the light emitted from the first emission end face 34 is taken as an example. The optical axis 38 is refracted by θ2. Therefore, in order to efficiently couple the light emitted from the DFB laser chip 1 to the optical waveguide of the optical semiconductor element mounting substrate 14, as shown in the figure, with respect to the first emission end face 34 of the DFB laser chip 1. It is necessary to place the optical semiconductor element mounting substrate 14 at an angle.

  (11) The information shown in FIG. 10 and the image information observed with the sixth CCD microscope are analyzed in an integrated manner by the image analysis device 16, whereby the p-side electrode of the DFB laser chip 1 and the optical semiconductor element mounting substrate The optimum position where the coupling efficiency between the DFB laser chip 1 and the optical waveguide on the optical semiconductor element mounting substrate 14 is maximized within a range in which sufficient electrical connection with the electrode formed on the optical waveguide 14 is ensured (FIG. 13). ) And the bonding tool 5 is lowered to the position to mount the DFB laser chip 1.

  In addition, the coupling efficiency between the mounted DFB laser chip 1 and the optical waveguide 15 on the optical semiconductor element mounting substrate 14 includes the refractive index of the optical waveguide (core) and its surroundings (cladding), and the shape and dimensions of the optical waveguide. Can be estimated by calculation by inputting them into the image analyzer 16 in advance.

  (12) Solder on the DFB laser chip 1 or the electrode of the optical semiconductor element mounting substrate 14 by raising the temperature of the element mounting stage 13 with the bonding tool 5 pressing the DFB laser chip 1 onto the optical semiconductor element mounting substrate 14 After melting (AuSn), heating of the element mounting stage 13 is stopped, and the element mounting stage 13 is cooled by air cooling.

  Finally, the n-side electrode formed on the optical semiconductor element mounting substrate 14 and the n-side electrode 25 of the DFB-laser chip 1 are electrically connected by wire bonding using a gold wire or a gold ribbon wire. .

  The mounting process of the DFB laser chip 1 according to the present invention on the optical semiconductor element mounting substrate 14 is thus completed.

  In the mounted optical module, when the coupling efficiency between the DFB laser chip 1 and the optical waveguide on the optical semiconductor element mounting substrate 14 was estimated, a value of about 9 dB was obtained, which was mounted by passive alignment using a conventional alignment mark. It was confirmed that a high coupling efficiency was obtained compared to the average value (about 11 dB) of the coupling efficiency.

(Second Embodiment)
Next, regarding the optical semiconductor device mounting method according to the second embodiment of the present invention, as an optical semiconductor device to be mounted, a DFB laser (modulator integrated DFB laser or EA-DFB laser) integrated with a modulator is taken as an example. Differences from the first embodiment will be described.

  FIG. 14 shows an overview of the EA-DFB laser chip. Reference numeral 47 denotes a DFB laser unit, which has the same structure as the DFB laser chip described in the first embodiment except for the shape of the p-side electrode 49 and the length of the active layer 19 (400 μm in this example). Reference numeral 48 denotes an electroabsorption (EA) modulator section (length: 150 μm), and a voltage is applied to the light absorption layer 52 capable of absorbing operation with respect to a wavelength band of 1.3 μm generated by the 47 DFB laser section. Is applied, ON / OFF switching operation of the light emitted from the first emission end face 34 is performed.

  The optical waveguide (18 to 20 in FIG. 2) in the DFB laser unit 47 and the optical waveguide 52 in the EA modulator unit 48 are abutted and joined (butt joint) inside the element, and the connection between them is made. There is almost no loss.

  Further, a separation groove 51 is formed so that no current flows between the p-type InP cladding layer 17 (FIG. 2) in the DFB laser part 47 and the p-type InP cladding layer 53 in the EA modulator part 48. The n-type InP cladding layer 21 and the n-side electrode 25 are shared by the DFB laser unit 47 and the EA modulator unit 48.

  FIG. 15A shows a schematic diagram when the EA-DFB laser chip is mounted on the element end face observation stage, and FIG. 15B shows a schematic diagram of the tip of the bonding tool. This embodiment is different from the first embodiment in that the electrode formed on the element end face observation stage 10 is separated at the DFB laser portion mounting location and the EA modulator portion mounting location. When observing the emission regions on the first and second emission end faces 34 and 35, the wiring 32 from the electrode 31 formed at the tip of the bonding tool 5 and the electrode 28 on the element end face observation stage The wiring 29 is connected to the current source 11, and the wiring 55 from the electrode 54 is not connected to the current source. The wiring 55 is normally disconnected (open) in this embodiment because light absorption in the absorption layer is increased by applying a voltage (bias) to the electrode of the EA modulator section. However, a voltage source is installed separately from the current source 11, and the voltage 32 is applied by connecting the wiring 32 from the electrode 31 and the wiring 55 from the electrode 54 formed at the tip of the bonding tool 5 to the voltage source. Also good.

(Third embodiment)
Next, regarding an optical semiconductor element mounting method according to the third embodiment of the present invention, as an optical semiconductor element to be mounted, a p-type semiconductor and an n-type semiconductor are arranged on a semi-insulating semiconductor substrate with an active layer sandwiched therebetween. The difference from the above-described first embodiment will be described using the lateral injection type semiconductor laser as an example.

  FIG. 16 shows an overview of the lateral injection type semiconductor laser chip in this example. An active layer 19 is formed on a semi-insulating InP substrate 59, and both sides of the active layer 19 are sandwiched between a p-type InP layer 56 and an n-type InP layer 57 so as to inject current laterally with respect to the active layer. I have to. In order to produce the p-side electrode 24 and the n-side electrode 25 on the p-type InP layer 56 and the n-type InP layer 57, the main feature is that the two electrodes are arranged on the same side. A semi-insulating InP layer 58 is formed on the active layer 19 to electrically isolate the p-type InP layer 56 and the n-type InP layer 57.

  FIG. 17A shows a schematic diagram when a lateral injection type semiconductor laser chip is mounted on the element end face observation stage, and FIG. 17B shows a schematic diagram of the tip of the bonding tool. The difference from the first embodiment is that both the p-side electrode 24 and the n-side electrode 25 are formed on the element end face observation stage 10. Therefore, the wiring 32 from the electrode 31 formed at the tip of the bonding tool 5 is not used, and the wiring 61 from the electrode 60 and the wiring 63 from the electrode 62 on the element end face observation stage are connected to the current source 11. A current is passed through the lateral injection type semiconductor laser chip.

  As shown in the second and third embodiments, the present invention can mount various semiconductor elements mainly by changing the electrode shape on the element end face observation stage and the connection method of the current source. It is.

DESCRIPTION OF SYMBOLS 1 DFB laser chip 2, 6-9, 12 CCD microscope 3 Element supply stage 4 Chip tray 5 Bonding tool 10 Element end surface observation stage 11 Current source 13 Element mounting stage 14 Optical semiconductor element mounting substrate 15 Optical waveguide 16 Image analysis device 17 p-type InP clad layer 18, 20 InGaAsPSCH layer 19 InGaAsP active layer 21 n-type InP substrate 22 semi-insulating InP buried layer 23 insulating film (SiO ₂ )
24 p-side electrode (Au)
25 n-side electrode (Au)
26 Center position of n-side electrode 27 Adhesion position outline of bonding tool 28, 29 Electrode formed on element end face observation stage 30 Center position of electrode 31 31 Electrode (Au) formed at tip of bonding tool
32 Wiring from the electrode formed at the tip of the bonding tool (Au)
33 Suction port of bonding tool 34 First emission end face 35 Second emission end face 36 Emission area at first emission end face 37 Radiation area at a position away from first emission end face 38 Optical axis of emitted light 39 Second An emission region at the emission end surface of the light source 40 A radiation region at a position away from the second emission end surface 41 An optical axis of guided light in the DFB laser chip 42 An optical axis of an optical waveguide formed on the optical semiconductor device mounting substrate 43 An optical semiconductor device P-side electrode (Au) on mounting board
44 n-side electrode (Au) on optical semiconductor element mounting substrate
45 Active position in the center of the height direction 46 Height from the electrode surface formed on the optical semiconductor element mounting substrate to the center position of the optical waveguide 47 DFB laser part of the EA-DFB laser chip 48 EA-DFB laser chip EA modulator 49 P-side electrode (Au) of DFB laser
50 p-side electrode (Au) of EA modulator
51 Electrode and separation groove of p-type InP clad layer 52 Absorption layer of EA modulator 53 p-type InP clad layer of EA modulator 54, 55 Second electrode (Au) formed on element end face observation stage
56 p-type InP layer 57 n-type InP layer 58 semi-insulating InP layer 59 semi-insulating InP substrate 60, 61 p-side electrode (Au) on the optical semiconductor element mounting substrate
62, 63 n-side electrode (Au) on optical semiconductor element mounting substrate

Claims (8)

An optical semiconductor element mounting apparatus for electrically connecting an optical semiconductor element having a light emitting element portion to a wiring formed on a substrate and mounting the optical semiconductor element on the substrate so as to be optically coupled to an optical waveguide or an optical fiber. And
An element supply stage on which the optical semiconductor element is placed;
A first camera that photographs a surface on which the first element electrode of the optical semiconductor element placed on the element supply stage is formed;
A bonding tool capable of sucking and fixing the surface on which the first element electrode is formed and moving the optical semiconductor element to an arbitrary position in a predetermined coordinate system, when the optical semiconductor element is fixed by suction A bonding tool having a bonding tool electrode electrically connected to the first element electrode;
A second camera for photographing a surface on which the second element electrode is formed opposite to a surface on which the first element electrode of the optical semiconductor element fixed by suction to the bonding tool is formed;
An element end face observation stage having a stage electrode;
A third camera for photographing the surface on which the stage electrode is formed;
A current source electrically connected to the bonding tool electrode and the stage electrode, wherein the optical semiconductor element is pressed against the element end face observation stage by the bonding tool, and the second element electrode is the stage electrode A current source for supplying a current emitted by the optical semiconductor element when electrically connected to
4th camera which image | photographs the 1st output end surface of the said optical semiconductor element which light-emits on the said element end surface observation stage, Comprising: The 4th camera which has a sensitivity in the wavelength band of the light radiate | emitted from the said optical semiconductor element When,
A fifth camera for photographing a second emission end face of the optical semiconductor element that emits light on the element end face observation stage, the wavelength of light emitted from the optical semiconductor element. A fifth camera having sensitivity to the belt;
An element mounting stage on which the substrate is placed and capable of heating and cooling the substrate;
A sixth camera for photographing a substrate electrode formed on the substrate placed on the element mounting stage and an optical waveguide integrally formed with the substrate or an optical fiber fixed to the substrate;
By acquiring and synthesizing images of the optical semiconductor element and the substrate taken by the first to sixth cameras, the outer shape, the outer dimension, and the first and second emission end faces of the optical semiconductor element Mapping the emission position, emission angle, emission direction, intensity distribution of the emission beam and the position and shape of the substrate electrode, and the position of the incident end face of the optical waveguide or optical fiber to the predetermined coordinate system,
When the optical semiconductor element is placed on the element end face observation stage by the bonding tool, the second element electrode is electrically connected to the stage electrode, and the first emission end face and the fourth camera are imaged. A first optimal position of the optical semiconductor element in which the plane is parallel and the second emission end face is parallel to the imaging surface of the fifth camera;
When the optical semiconductor element is moved to the first optimum position by the bonding tool, the outer shape, the outer dimension, the outgoing position of the outgoing light, the outgoing beam of the first and second outgoing end faces of the optical semiconductor element, Based on the observation result of the intensity distribution, the emission angle of the emission beam at the first and second emission end faces, the emission direction, and the intensity distribution of the emission beam at a position away from the first and second emission end faces by a predetermined distance. To calculate
When the optical semiconductor element is placed on the substrate placed on the element mounting stage by the bonding tool, the exit angle, exit direction, and predetermined distance from the exit end face of the exit beam at the first and second exit end faces The optical semiconductor in the calculation result of the intensity distribution of the outgoing beam at a position separated by a distance, the position coordinates of the incident end face of the optical waveguide or optical fiber, and the position coordinates when the optical semiconductor element is mounted on the substrate An image analysis device for calculating an optical coupling efficiency between the element and the optical waveguide or optical fiber;
An optical semiconductor element mounting apparatus comprising: When the bonding tool places the optical semiconductor element on the substrate placed on the element mounting stage,
In the image analysis device, the second element electrode is electrically connected to the substrate electrode, and an incident end face of the optical waveguide or the optical fiber and at least one of the first and second exit end faces are predetermined. Calculating a second optimum position of the optical semiconductor element at which the coupling efficiency between the optical waveguide or optical fiber and the light emitted from the optical semiconductor element is highest at a position separated by a distance;
When the optical semiconductor element is moved to the second optimum position by the bonding tool, the element mounting stage is fixed up to a predetermined temperature when the optical semiconductor element is fixed on the substrate by the bonding tool. Heating the element mounting stage,
The optical semiconductor element mounting apparatus according to claim 1.   The image analysis apparatus photographs a reference measurement object having a predetermined length placed on the element supply stage with the first and second cameras, and the element end face observation stage with the third to fifth cameras. The reference measurement object placed above is photographed, the reference measurement object placed on the element mounting stage is photographed by the sixth camera, and photographed for each photographing magnification of the first to sixth cameras. The dimensions of the reference object to be measured in the obtained image are obtained and stored in advance, and from the comparison with the reference object to be measured, the object placed on the element supply stage, the element end face observation stage and the element mounting stage are stored. 3. The optical semiconductor element mounting apparatus according to claim 1, wherein dimensions of the measurement object are respectively calculated.   4. The light according to claim 1, wherein the optical semiconductor element is a lateral injection type semiconductor laser in which a p-type semiconductor and an n-type semiconductor are arranged so as to sandwich an active layer in a horizontal direction. Semiconductor element mounting device. An optical semiconductor element mounting method in which an optical semiconductor element having a light emitting element portion is electrically connected to a wiring formed on a substrate and mounted on the substrate so as to be optically coupled to an optical waveguide or an optical fiber. And
Disposing the optical semiconductor element on an element supply stage;
Photographing a surface on which the first element electrode of the optical semiconductor element placed on the element supply stage is formed using a first camera;
A first mapping step of acquiring an image of the optical semiconductor element photographed by the first camera, and mapping an outer shape and an outer dimension of the optical semiconductor element to the predetermined coordinate system;
Using a bonding tool to suck and fix the surface on which the first element electrode is formed, and to move the optical semiconductor element to a first position in a predetermined coordinate system;
Using the second camera, a second element electrode is formed that faces the surface on which the first element electrode of the optical semiconductor element that is suction-fixed to the bonding tool at the first position is formed. A step of photographing the surface;
A second mapping step of acquiring an image of the optical semiconductor element taken by the second camera and mapping an outer shape and an outer dimension of the optical semiconductor element to the predetermined coordinate system;
Photographing the surface on which the stage electrode of the element end face observation stage is formed using a third camera;
A third mapping step of acquiring an image of the stage electrode photographed by the third camera, and mapping an outer shape and an outer dimension of the stage electrode to the predetermined coordinate system;
When the bonding tool places the optical semiconductor element on the element end face observation stage, the second element electrode is electrically connected to a stage electrode included in the element end face observation stage, and the first emission end face and the fourth Calculating a first optimum position of the optical semiconductor element in which the imaging surface of the camera is parallel and the second emission end surface and the imaging surface of the fifth camera are parallel;
Pressing the second element electrode of the optical semiconductor element sucked and fixed to the bonding tool at the first optimum position against the stage electrode of the element end face observation stage;
A current is supplied between a bonding tool electrode electrically connected to the first element electrode when the optical semiconductor element is held by suction and the stage electrode, and the optical semiconductor element emits light. Step to
Photographing the first exit end face of the optical semiconductor element that emits light on the element end face observation stage using the fourth camera;
Photographing a second emission end face facing the first emission end face of the optical semiconductor element that emits light on the element end face observation stage using the fifth camera;
Acquire images of the optical semiconductor elements taken by the fourth and fifth cameras, and determine the exit position, exit angle, exit direction, and exit beam intensity distribution of the exit light on the first and second exit end faces. A fourth mapping step for mapping to the predetermined coordinate system;
In the step of photographing the first emission end face and the step of photographing the second emission end face, the outer shape, the outer dimensions, the emission position of the emitted light, and the emission at the first and second emission end faces of the optical semiconductor element Based on the observation result of the intensity distribution of the beam, the exit angle of the exit beam at the first and second exit end faces, the exit direction, and the exit beam at a position away from the first and second exit end faces by a predetermined distance. Calculating an intensity distribution;
Placing the substrate on an element mounting stage capable of heating and cooling the substrate;
Photographing a substrate electrode formed on the substrate placed on the element mounting stage and an optical waveguide integrally formed with the substrate or an optical fiber fixed to the substrate using a sixth camera; ,
A fifth mapping step of acquiring an image of the substrate photographed by the sixth camera and mapping the position and shape of the substrate electrode and the position of the incident end face of the optical waveguide or optical fiber to the predetermined coordinate system; When,
When the optical semiconductor element is placed on the substrate placed on the element mounting stage by the bonding tool, the exit angle, exit direction, and predetermined distance from the exit end face of the exit beam at the first and second exit end faces The optical semiconductor in the calculation result of the intensity distribution of the outgoing beam at a position separated by a distance, the position coordinates of the incident end face of the optical waveguide or optical fiber, and the position coordinates when the optical semiconductor element is mounted on the substrate Calculating the optical coupling efficiency between the element and the optical waveguide or optical fiber;
An optical semiconductor element mounting method comprising: When the bonding tool places the optical semiconductor element on the substrate placed on the element mounting stage, the second element electrode is electrically connected to the substrate electrode, and the optical waveguide or the optical fiber is incident. The coupling efficiency between the optical waveguide or the optical fiber and the light emitted from the optical semiconductor element is highest at a position where the end face and at least one of the first and second emission end faces are separated by a predetermined distance. Calculating a second optimum position of the optical semiconductor element;
Fixing the optical semiconductor element to the second optimum position by the bonding tool;
The element mounting stage, when the optical semiconductor element is fixed on the substrate by the bonding tool, heating the element mounting stage to a predetermined temperature;
The optical semiconductor element mounting method according to claim 5, further comprising:   In the first to fifth mapping steps, a reference measurement object having a predetermined length placed on the element supply stage is photographed by the first and second cameras, and the third to fifth cameras are used. The reference measurement object placed on the element end face observation stage is photographed, the reference measurement object placed on the element mounting stage is photographed by the sixth camera, and the first to sixth cameras. The dimensions of the reference object to be measured in an image photographed at each photographing magnification are obtained and stored in advance, and the element supply stage, the element end face observation stage, and the element mounting stage are compared with the reference object to be measured. The method for mounting an optical semiconductor element according to claim 5, further comprising the step of calculating dimensions of an object to be measured placed on the substrate.   8. The light according to claim 5, wherein the optical semiconductor element is a lateral injection semiconductor laser in which a p-type semiconductor and an n-type semiconductor are arranged so as to sandwich an active layer in a horizontal direction. Semiconductor element mounting method.

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