CN105742421A - Normal LED (light emitting diode) and manufacturing process therefor - Google Patents
Normal LED (light emitting diode) and manufacturing process therefor Download PDFInfo
- Publication number
- CN105742421A CN105742421A CN201610253384.7A CN201610253384A CN105742421A CN 105742421 A CN105742421 A CN 105742421A CN 201610253384 A CN201610253384 A CN 201610253384A CN 105742421 A CN105742421 A CN 105742421A
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- China
- Prior art keywords
- layer
- gan layer
- electrode
- quantum well
- gan
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Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 230000001413 cellular effect Effects 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 206010027146 Melanoderma Diseases 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a normal LED (light emitting diode) and a manufacturing process therefor, and relates to the technical field of the LED. A partial region of a P-GaN layer and a quantum well layer of each cell is removed from an epitaxial layer through patterned etching until an N-GaN layer is exposed; a transparent conductive material is evaporated on the surface of an epitaxial wafer through a sputtering method; only the transparent conductive material on the P-GaN layer of each cell is kept through a photoetching process and a chemical etching method; a P electrode is manufactured on the transparent conductive layer on one of the two adjacent cells, while an N electrode is manufactured on the exteriors of the transparent conductive layer, the P-GaN layer and the quantum well layer of the other cell in a wrapping manner; and the lower end of the N electrode is connected to the N-GaN layer. By adoption of the method, partial P-GaN layer and the quantum well layer below the N electrode are kept. The preparation process is simple; the P-GaN and MQW which need to be fully etched off originally are kept for a certain part; and the dark spot phenomenon after ICP etching is reduced, and the increasing of the yield is realized.
Description
Technical field
The present invention relates to the production technical field of LED light emitting diode.
Background technology
Current chip major part is positive assembling structure, P electrode is formed directly on P-GaN layer by conductive layer time saturating, in order to N electrode is directly connected to N-GaN layer, the P-GaN layer below P electrode, quantum well layer is only retained during etching, the P-GaN layer of remainder and quantum well layer all etch removal, are directly completely exposed N-GaN layer.This structure substantial amounts of N-GaN layer is directly exposed to LED LED surface, is easily subject to the impact of epitaxial surface factor when carrying out ICP etching and making N step, then after being deposited with electrode, ICP stain and the low shortcoming of LED light emitting diode yield easily occurs.
Summary of the invention
The present invention seeks to propose one to be effectively reduced ICP stain occurs, and improve the LED light emitting diode of LED light emitting diode yield.
The present invention includes N-GaN layer, quantum well layer, P-GaN layer and the transparency conducting layer set gradually in the same side of substrate, P electrode is set over transparent conductive layer, N-GaN layer connects N electrode, it is characterised in that packaging type arranges transparency conducting layer, P-GaN layer and quantum well layer between N electrode and N-GaN layer.
Present invention preserves part P-GaN below N electrode and quantum well layer, N-GaN layer can be reduced and be directly exposed to the area of LED LED surface, and then reduce the generation of the black spot phenomenon after ICP has etched, and improve the yield of product, and the present invention is conducive to increasing the ability extending transversely of electric current, improves the distributing homogeneity of electric current.
The present invention another object is that the processing technology proposing above forward LED light emitting diode.
The present invention comprises the following steps:
1) N-GaN layer, quantum well layer and P-GaN layer it are epitaxially-formed successively in the same side of substrate；
2) etching removes P-GaN layer and the quantum well layer subregion of each cellular graphically, until exposing N-GaN layer；
3) utilize on epitaxial wafer surface sputtering method to be deposited with transparent conductive material, by photoetching process, use method for chemially etching, only retain the transparent conductive material on the P-GaN layer of each cellular；
4) making P electrode on the transparency conducting layer of a cellular in two adjacent cellulars, transparency conducting layer, P-GaN layer and quantum well layer outer wrapping formula at another cellular make N electrode, and the lower end of N electrode is connected on N-GaN layer.
Processing technology of the present invention and simply effective, under conditions of same chip size area, P-GaN and MQW that originally need all to etch away is retained a part, thus reduces the generation of the black spot phenomenon after ICP has etched and the lifting of yield.
Accompanying drawing explanation
Fig. 1 to Fig. 2 is processing technology procedure chart of the present invention.
Fig. 3 is a kind of structural representation of the present invention.
Detailed description of the invention
One, formal dress chip fabrication technique is as follows:
1, above typical substrate 1, it is epitaxially-formed N-GaN layer 2, quantum well layer 3 and P-GaN layer 4 successively.
2, in gold-tinted photoetching process, the ratio utilizing sensing even summation plasma (ICP) regulation etching gas BCl3 and Cl2 etches P-GaN layer and the quantum well layer subregion removing each cellular graphically, until exposing N-GaN layer, etching depth about 10000～16000.
Shape semi-products as shown in Figure 1.
3, utilize on epitaxial wafer surface sputtering method to be deposited with tin indium oxide (ITO) transparency conducting layer 5, by photoetching process, use method for chemially etching, only retain the ITO on P-GaN layer, make electric current more preferable in the uniformity of P-GaN layer surface distributed.As shown in Figure 2.
4, the P electrode of formation thickness about 10000～12000 is made on the transparency conducting layer of a cellular in two adjacent cellulars.
The transparency conducting layer of another cellular, P-GaN layer and quantum well layer outer wrapping formula in two adjacent cellulars make the N electrode forming thickness about 10000～12000, and make the lower end of N electrode be connected on N-GaN layer.
Two, the product structure feature made:
As shown in Figure 3, N-GaN layer 2, quantum well layer 3, P-GaN layer 4 and the transparency conducting layer 5 set gradually is included in the same side of substrate 1, arranging P electrode on transparency conducting layer 5, between N electrode 7 and N-GaN layer 2, packaging type arranges transparency conducting layer 5, P-GaN layer 4 and quantum well layer 3.
Claims (2)
1. a forward LED light emitting diode, N-GaN layer, quantum well layer, P-GaN layer and the transparency conducting layer set gradually is included in the same side of substrate, P electrode is set over transparent conductive layer, N-GaN layer connects N electrode, it is characterised in that packaging type arranges transparency conducting layer, P-GaN layer and quantum well layer between N electrode and N-GaN layer.
2. the processing technology of forward LED light emitting diode as claimed in claim 1, comprises the following steps:
1) N-GaN layer, quantum well layer and P-GaN layer it are epitaxially-formed successively in the same side of substrate；
2) etching removes P-GaN layer and the quantum well layer subregion of each cellular graphically, until exposing N-GaN layer；
3) utilize on epitaxial wafer surface sputtering method to be deposited with transparent conductive material, by photoetching process, use method for chemially etching, only retain the transparent conductive material on the P-GaN layer of each cellular；
4) P electrode is made on the transparency conducting layer of a cellular in two adjacent cellulars；
It is characterized in that: the transparency conducting layer of another cellular, P-GaN layer and quantum well layer outer wrapping formula in two adjacent cellulars make N electrode, and the lower end of N electrode is connected on N-GaN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610253384.7A CN105742421A (en) | 2016-04-22 | 2016-04-22 | Normal LED (light emitting diode) and manufacturing process therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610253384.7A CN105742421A (en) | 2016-04-22 | 2016-04-22 | Normal LED (light emitting diode) and manufacturing process therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105742421A true CN105742421A (en) | 2016-07-06 |
Family
ID=56254824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610253384.7A Pending CN105742421A (en) | 2016-04-22 | 2016-04-22 | Normal LED (light emitting diode) and manufacturing process therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105742421A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887496A (en) * | 2017-04-01 | 2017-06-23 | 湘能华磊光电股份有限公司 | A kind of light emitting diode and preparation method thereof |
| CN109326702A (en) * | 2017-07-31 | 2019-02-12 | 山东浪潮华光光电子股份有限公司 | A kind of LED chip and preparation method thereof with annular electrode structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040089861A1 (en) * | 2002-11-12 | 2004-05-13 | Shi-Ming Chen | Lateral current blocking light emitting diode and method of making the same |
| CN100573941C (en) * | 2007-01-12 | 2009-12-23 | 晶元光电股份有限公司 | Light emitting diode construction and its manufacture method |
| CN102832302A (en) * | 2012-08-31 | 2012-12-19 | 扬州中科半导体照明有限公司 | Method for manufacturing N electrode of GaN-based light-emitting diode (LED) |
| CN205645852U (en) * | 2016-04-22 | 2016-10-12 | 厦门乾照光电股份有限公司 | Formal dress LED emitting diode |
-
2016
- 2016-04-22 CN CN201610253384.7A patent/CN105742421A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040089861A1 (en) * | 2002-11-12 | 2004-05-13 | Shi-Ming Chen | Lateral current blocking light emitting diode and method of making the same |
| CN100573941C (en) * | 2007-01-12 | 2009-12-23 | 晶元光电股份有限公司 | Light emitting diode construction and its manufacture method |
| CN102832302A (en) * | 2012-08-31 | 2012-12-19 | 扬州中科半导体照明有限公司 | Method for manufacturing N electrode of GaN-based light-emitting diode (LED) |
| CN205645852U (en) * | 2016-04-22 | 2016-10-12 | 厦门乾照光电股份有限公司 | Formal dress LED emitting diode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887496A (en) * | 2017-04-01 | 2017-06-23 | 湘能华磊光电股份有限公司 | A kind of light emitting diode and preparation method thereof |
| CN106887496B (en) * | 2017-04-01 | 2018-08-31 | 湘能华磊光电股份有限公司 | A kind of production method of light emitting diode |
| CN109326702A (en) * | 2017-07-31 | 2019-02-12 | 山东浪潮华光光电子股份有限公司 | A kind of LED chip and preparation method thereof with annular electrode structure |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20160706 |