CN105742203B - 一种改变气体流动模式的装置及晶圆处理方法和设备 - Google Patents

一种改变气体流动模式的装置及晶圆处理方法和设备 Download PDF

Info

Publication number
CN105742203B
CN105742203B CN201410749979.2A CN201410749979A CN105742203B CN 105742203 B CN105742203 B CN 105742203B CN 201410749979 A CN201410749979 A CN 201410749979A CN 105742203 B CN105742203 B CN 105742203B
Authority
CN
China
Prior art keywords
gas
moving ring
wafer
opening
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410749979.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN105742203A (zh
Inventor
倪图强
黄智林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Medium And Micro Semiconductor Equipment (shanghai) Co Ltd
Original Assignee
Medium And Micro Semiconductor Equipment (shanghai) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Medium And Micro Semiconductor Equipment (shanghai) Co Ltd filed Critical Medium And Micro Semiconductor Equipment (shanghai) Co Ltd
Priority to CN201410749979.2A priority Critical patent/CN105742203B/zh
Priority to TW104127779A priority patent/TW201621977A/zh
Priority to KR1020150162465A priority patent/KR101735958B1/ko
Priority to US14/946,188 priority patent/US10529577B2/en
Publication of CN105742203A publication Critical patent/CN105742203A/zh
Application granted granted Critical
Publication of CN105742203B publication Critical patent/CN105742203B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
CN201410749979.2A 2014-12-10 2014-12-10 一种改变气体流动模式的装置及晶圆处理方法和设备 Active CN105742203B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201410749979.2A CN105742203B (zh) 2014-12-10 2014-12-10 一种改变气体流动模式的装置及晶圆处理方法和设备
TW104127779A TW201621977A (zh) 2014-12-10 2015-08-25 改變氣體流動模式的裝置及晶圓處理方法和設備
KR1020150162465A KR101735958B1 (ko) 2014-12-10 2015-11-19 가스 유동패턴을 변경하는 장치, 웨이퍼 처리방법 및 설비
US14/946,188 US10529577B2 (en) 2014-12-10 2015-11-19 Device of changing gas flow pattern and a wafer processing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410749979.2A CN105742203B (zh) 2014-12-10 2014-12-10 一种改变气体流动模式的装置及晶圆处理方法和设备

Publications (2)

Publication Number Publication Date
CN105742203A CN105742203A (zh) 2016-07-06
CN105742203B true CN105742203B (zh) 2019-08-13

Family

ID=56111862

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410749979.2A Active CN105742203B (zh) 2014-12-10 2014-12-10 一种改变气体流动模式的装置及晶圆处理方法和设备

Country Status (4)

Country Link
US (1) US10529577B2 (https=)
KR (1) KR101735958B1 (https=)
CN (1) CN105742203B (https=)
TW (1) TW201621977A (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523714B2 (ja) 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
CN110890260B (zh) * 2018-09-07 2022-11-04 中微半导体设备(上海)股份有限公司 一种动态控制气体流动模式的装置及晶圆处理方法和设备
KR102078364B1 (ko) * 2019-04-25 2020-02-17 주식회사 기가레인 배출흐름조절부 및 이를 포함하는 플라즈마 처리장치
WO2020245493A1 (en) 2019-06-06 2020-12-10 Picosun Oy Substrate processing methods and apparatus
CN110211860B (zh) * 2019-06-26 2021-07-13 南京中电熊猫液晶显示科技有限公司 一种干法刻蚀设备
CN112748639B (zh) * 2019-10-31 2024-09-17 沈阳芯源微电子设备股份有限公司 气流分区调控的ffu整流板和调整胶形的涂胶工艺
KR102883703B1 (ko) * 2020-11-05 2025-11-10 삼성전자주식회사 기판 처리 방법 및 장치
CN113488416B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 晶圆后处理设备及其应用的通风系统
CN113471123B (zh) * 2021-07-06 2023-08-25 华海清科股份有限公司 晶圆竖直旋转处理设备及其应用的通风系统
CN118648098A (zh) * 2022-03-02 2024-09-13 朗姆研究公司 沉积-抑制-沉积工艺的层均匀性改善
CN117116816B (zh) * 2023-10-24 2024-01-23 上海谙邦半导体设备有限公司 进气装置及进气方法
CN117410166B (zh) * 2023-12-15 2024-05-17 浙江集迈科微电子有限公司 用于提高刻蚀均匀度的整流组件及其使用方法
CN117612977B (zh) * 2024-01-23 2024-04-05 上海邦芯半导体科技有限公司 进气装置及进气方法
USD1109284S1 (en) 2024-06-07 2026-01-13 Asm Ip Holding B.V. Flow control ring
CN118824905B (zh) * 2024-09-18 2024-11-29 上海邦芯半导体科技有限公司 一种半导体反应装置及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
CN1947221A (zh) * 2004-04-08 2007-04-11 应用材料股份有限公司 用于控制半导体衬底工艺腔室中气体流动的装置
CN102355792A (zh) * 2011-10-19 2012-02-15 中微半导体设备(上海)有限公司 改进等离子均匀性和效率的电感耦合等离子装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
JP4288767B2 (ja) 1999-07-07 2009-07-01 東京エレクトロン株式会社 半導体装置の製造方法
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
US6962878B2 (en) * 2003-04-17 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce photoresist mask line dimensions
US7211518B2 (en) * 2004-04-19 2007-05-01 Lam Research Corporation Waferless automatic cleaning after barrier removal
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
KR100963297B1 (ko) 2007-09-04 2010-06-11 주식회사 유진테크 샤워헤드 및 이를 포함하는 기판처리장치, 샤워헤드를이용하여 플라스마를 공급하는 방법
JP5886821B2 (ja) * 2013-01-04 2016-03-16 ピーエスケー インコーポレイテッド 基板処理装置及び方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
CN1947221A (zh) * 2004-04-08 2007-04-11 应用材料股份有限公司 用于控制半导体衬底工艺腔室中气体流动的装置
CN102355792A (zh) * 2011-10-19 2012-02-15 中微半导体设备(上海)有限公司 改进等离子均匀性和效率的电感耦合等离子装置

Also Published As

Publication number Publication date
TW201621977A (zh) 2016-06-16
CN105742203A (zh) 2016-07-06
US20160172204A1 (en) 2016-06-16
KR101735958B1 (ko) 2017-05-15
US10529577B2 (en) 2020-01-07
KR20160070679A (ko) 2016-06-20
TWI560742B (https=) 2016-12-01

Similar Documents

Publication Publication Date Title
CN105742203B (zh) 一种改变气体流动模式的装置及晶圆处理方法和设备
CN102763199B (zh) 处理腔室之气流改良
US9909213B2 (en) Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
KR102664176B1 (ko) 플라즈마 처리 장치
JP7441900B2 (ja) 正確な温度及び流量制御を備えたマルチステーションチャンバリッド
JP6796692B2 (ja) 基板処理装置
KR20200115163A (ko) 기판의 에칭 장치 및 에칭 방법
TWM448051U (zh) 溫度可分區調控的靜電吸盤
CN110890260B (zh) 一种动态控制气体流动模式的装置及晶圆处理方法和设备
US9488315B2 (en) Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
CN105742211A (zh) 基板处理装置
CN110731000A (zh) 具有均匀性控制的等离子体剥离工具
CN204039498U (zh) 扩散器
KR20230048543A (ko) 이동가능한 인서트를 갖는 플라즈마 스트립 툴
WO2019161109A1 (en) Plasma spreading apparatus and system, and method for spreading plasma in process ovens
CN105632861A (zh) 电感耦合等离子体处理装置及等离子体刻蚀方法
TW201724201A (zh) 用以改良清洗之具有非均勻氣流清除之框架及應用其之處理腔室及方法
US20200013591A1 (en) Plasma Spreading Apparatus And System, And Method Of Spreading Plasma In Process Ovens
JP6890085B2 (ja) 基板処理装置
JP6896565B2 (ja) インナーウォール及び基板処理装置
CN105789008A (zh) 等离子体处理装置及等离子体刻蚀方法
KR101645545B1 (ko) 기판처리장치
KR101696196B1 (ko) 기판 처리 장치
TWI620247B (zh) 蝕刻形成矽通孔的方法與矽通孔刻蝕裝置
JP2016081967A (ja) 半導体製造装置および半導体製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant