CN105723535A - 高密度线性电容器 - Google Patents

高密度线性电容器 Download PDF

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Publication number
CN105723535A
CN105723535A CN201480063001.9A CN201480063001A CN105723535A CN 105723535 A CN105723535 A CN 105723535A CN 201480063001 A CN201480063001 A CN 201480063001A CN 105723535 A CN105723535 A CN 105723535A
Authority
CN
China
Prior art keywords
capacitor arrangement
interconnection
polysilicon structure
polysilicon
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480063001.9A
Other languages
English (en)
Chinese (zh)
Inventor
B·S·李
S·S·巴扎加尼
L·戴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105723535A publication Critical patent/CN105723535A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/043—Manufacture or treatment of capacitors having no potential barriers using patterning processes to form electrode extensions, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN201480063001.9A 2013-11-20 2014-09-23 高密度线性电容器 Pending CN105723535A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361906834P 2013-11-20 2013-11-20
US61/906,834 2013-11-20
US14/264,620 2014-04-29
US14/264,620 US20150137201A1 (en) 2013-11-20 2014-04-29 High density linear capacitor
PCT/US2014/057017 WO2015076926A1 (en) 2013-11-20 2014-09-23 High density linear capacitor

Publications (1)

Publication Number Publication Date
CN105723535A true CN105723535A (zh) 2016-06-29

Family

ID=53172403

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480063001.9A Pending CN105723535A (zh) 2013-11-20 2014-09-23 高密度线性电容器

Country Status (5)

Country Link
US (1) US20150137201A1 (https=)
EP (1) EP3072170A1 (https=)
JP (1) JP2017502496A (https=)
CN (1) CN105723535A (https=)
WO (1) WO2015076926A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658386B2 (en) 2018-07-19 2020-05-19 Psemi Corporation Thermal extraction of single layer transfer integrated circuits
US10573674B2 (en) * 2018-07-19 2020-02-25 Psemi Corporation SLT integrated circuit capacitor structure and methods
KR102765313B1 (ko) 2019-04-02 2025-02-07 삼성전자주식회사 수직 커패시터 구조 및 이를 포함하는 비휘발성 메모리 장치
US12490504B2 (en) 2022-02-07 2025-12-02 Qualcomm Incorporated High density linear capacitor in semiconductor technologies
US12394705B2 (en) 2022-08-15 2025-08-19 Qualcomm Incorporated Layout design of custom stack capacitor to procure high capacitance

Citations (6)

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US20020060333A1 (en) * 2000-11-17 2002-05-23 Rohm Co., Ltd Semiconductor apparatus having a charge pump circuit
CN1393036A (zh) * 2000-04-04 2003-01-22 皇家菲利浦电子有限公司 在用于功率放大器的深度亚微米金属氧化物半导体中的组合的晶体管－电容器结构
US20070181918A1 (en) * 2006-02-03 2007-08-09 Kabushiki Kaisha Toshiba Semiconductor device
US20090096003A1 (en) * 2007-10-11 2009-04-16 International Business Machines Corporation Semiconductor cell structure including buried capacitor and method for fabrication thereof
CN101714551A (zh) * 2008-09-30 2010-05-26 台湾积体电路制造股份有限公司 含层间绝缘部分的低漏电电容器
US20120039009A1 (en) * 2009-03-31 2012-02-16 Freescale Semiconductor Inc. Integrated protection circuit

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US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
EP1071130A3 (en) * 1999-07-14 2005-09-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device interconnection structure comprising additional capacitors
JP2001085630A (ja) * 1999-07-14 2001-03-30 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US6819542B2 (en) * 2003-03-04 2004-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitor structure for an integrated circuit
JP4525965B2 (ja) * 2004-01-06 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置
US7561407B1 (en) * 2005-11-28 2009-07-14 Altera Corporation Multi-segment capacitor
TW200847404A (en) * 2007-05-18 2008-12-01 Nanya Technology Corp Flash memory device and method for fabricating thereof
JP4455621B2 (ja) * 2007-07-17 2010-04-21 株式会社東芝 エージングデバイス
US8022458B2 (en) * 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
JP2010118563A (ja) * 2008-11-14 2010-05-27 Renesas Technology Corp 半導体装置
US7994610B1 (en) * 2008-11-21 2011-08-09 Xilinx, Inc. Integrated capacitor with tartan cross section
JP2010135572A (ja) * 2008-12-05 2010-06-17 Renesas Electronics Corp 半導体装置
US8237243B2 (en) * 2009-03-18 2012-08-07 International Business Machines Corporation On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
JP2011029249A (ja) * 2009-07-22 2011-02-10 Renesas Electronics Corp 半導体装置
JP2010153905A (ja) * 2010-03-05 2010-07-08 Renesas Technology Corp 半導体装置
US8420476B2 (en) * 2010-05-27 2013-04-16 International Business Machines Corporation Integrated circuit with finFETs and MIM fin capacitor
US8860107B2 (en) * 2010-06-03 2014-10-14 International Business Machines Corporation FinFET-compatible metal-insulator-metal capacitor
JP2013183085A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置の製造方法
US8860148B2 (en) * 2012-04-11 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET integrated with capacitor
US8841185B2 (en) * 2012-08-13 2014-09-23 International Business Machines Corporation High density bulk fin capacitor
KR20150010353A (ko) * 2013-07-19 2015-01-28 삼성전자주식회사 커패시터 구조물
US9685433B2 (en) * 2013-09-25 2017-06-20 Taiwan Semiconductor Manufacturing Company Ltd. Capacitor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1393036A (zh) * 2000-04-04 2003-01-22 皇家菲利浦电子有限公司 在用于功率放大器的深度亚微米金属氧化物半导体中的组合的晶体管－电容器结构
US20020060333A1 (en) * 2000-11-17 2002-05-23 Rohm Co., Ltd Semiconductor apparatus having a charge pump circuit
US20070181918A1 (en) * 2006-02-03 2007-08-09 Kabushiki Kaisha Toshiba Semiconductor device
US20090096003A1 (en) * 2007-10-11 2009-04-16 International Business Machines Corporation Semiconductor cell structure including buried capacitor and method for fabrication thereof
CN101714551A (zh) * 2008-09-30 2010-05-26 台湾积体电路制造股份有限公司 含层间绝缘部分的低漏电电容器
US20120039009A1 (en) * 2009-03-31 2012-02-16 Freescale Semiconductor Inc. Integrated protection circuit

Also Published As

Publication number Publication date
EP3072170A1 (en) 2016-09-28
US20150137201A1 (en) 2015-05-21
JP2017502496A (ja) 2017-01-19
WO2015076926A1 (en) 2015-05-28

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160629