CN105720009A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN105720009A CN105720009A CN201610078328.4A CN201610078328A CN105720009A CN 105720009 A CN105720009 A CN 105720009A CN 201610078328 A CN201610078328 A CN 201610078328A CN 105720009 A CN105720009 A CN 105720009A
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- substrate
- laser
- light
- type semiconductor
- extraction regions
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
Abstract
The invention provides a manufacturing method of light-emitting elements. The method comprises the steps as follows: a substrate is provided, wherein the substrate comprises a first surface and a second surface; the first surface is opposite to the second surface; at least one light-emitting stack is formed on the first surface of the substrate; a metal layer is formed on the second surface of the substrate; a first laser light is provided to form a plurality of aisle regions on the metal layer and to expose partial second surface; laser by-products on the aisle regions are cleaned with an acid liquor, water or a gas; a second laser light is provided to irradiate the inside of the substrate from the exposed second surface of the substrate to form a plurality of light condensing regions in the substrate; distances are formed between the plurality of light condensing regions and the first surface and the second surface; the length of each light condensing region is 10-100 microns; and the substrate is split along the plurality of light condensing regions to form a plurality of light-emitting elements.
Description
The application is filing date on January 28th, 2010 and invention entitled " light emitting diode and system thereof
Make method " the divisional application of Chinese patent application 201010105779.5.
Technical field
A kind of light-emitting component, a kind of about the light-emitting component and the manufacture thereof that carry out twice substrate cut
Method.
Background technology
The principle of luminosity of light emitting diode (light-emitting diode, LED) is to utilize electronics at N-shaped half
The energy difference of movement between conductor and p-type semiconductor, discharges energy in the form of light, and such luminescence is former
Reason is different from the principle of luminosity of electric filament lamp heating, and therefore light emitting diode is referred to as cold light source.Additionally, send out
Optical diode has the advantages such as high-durability, life-span length, light and handy, power consumption is low, illumination the most now
Placing high hopes for light emitting diode in market, is regarded as the illuminations of a new generation, the most gradually replaces biography
System light source, and it is applied to various field, as traffic signal, backlight module, street lighting, medical treatment set
Standby etc..
Fig. 1 is traditional light emitting element structure schematic diagram, as it is shown in figure 1, traditional light-emitting component 100,
Include that a transparency carrier 10, is positioned on transparency carrier 10 semiconductor laminated 12, and at least one
Electrode 14 is positioned on above-mentioned semiconductor laminated 12, and the most above-mentioned semiconductor laminated 12 are the most extremely
Include one first conductive-type semiconductor layer 120, active layer 122 less, and one second conductivity type is partly led
Body layer 124.
Additionally, above-mentioned light-emitting component 100 more can be connected to be formed with the combination of other elements further
One light-emitting device (light-emitting apparatus).Fig. 2 is traditional luminous device structure schematic diagram, as
Shown in Fig. 2, a light-emitting device 200 includes a secondary carrier with at least one circuit 202
(sub-mount)20；At least one solder (solder) 22 is positioned on above-mentioned carrier 20, by this solder 22
Above-mentioned light-emitting component 100 is bonded and fixed on time carrier 20 and makes the substrate 10 of light-emitting component 100 with
Circuit 202 on secondary carrier 20 forms electrical connection；And, an electric connection structure 24, electrically to connect
The electrode 14 of sending and receiving optical element 100 and the circuit 202 on time carrier 20；Wherein, above-mentioned secondary carrier
20 can be lead frame (lead frame) or large scale inlays substrate (mounting substrate), with convenient
The circuit of light-emitting device 200 is planned and improves its radiating effect.
But, as it is shown in figure 1, in traditional light-emitting component 100, due to the table of transparency carrier 10
Face is a flat surface, and the refractive index of transparency carrier 10 is different from the refractive index of external environment condition, therefore
When the light A that active layer 122 is sent is entered external environment condition by substrate, easily form total reflection (Total
Internal Reflection, TIR), reduce the light output efficiency of light-emitting component 100.
Additionally, in the structure of nitride light-emitting element, sapphire (sapphire) and carborundum (SiC)
Main material for its substrate.In the processing procedure of nitride light-emitting element, including using wafer as substrate also
It is formed on luminous lamination, then wafer is cut into the processing procedure of wafer.Traditional cutting method is to utilize
One diamond cutter is as cutting tool；The method that another kind of wafer cuts into wafer is to utilize the height of laser beam
Energy density, by the bond cracking of substrate Atom with atom, reaches cutting and separates the purpose of wafer.
But in the processing procedure of cut, because of localized hyperthermia produced by the high-energy-density of laser beam, make
Piling up many by-products after the cracking of substrate crystal bond on Cutting Road, this by-product can absorb light-emitting component
The light sent, and then reduce the light extraction efficiency of wafer.Therefore the most effectively remove after cut
By-product, to promote the light extraction efficiency of wafer, for improving an important topic of light-emitting component performance.
If it addition, substrate has metal level at the opposite side forming luminous lamination, more make the laser cannot be from
This side of metal level is absorbed by substrate, and increases the degree of difficulty of cut substrate.
Summary of the invention
A kind of method of manufacturing luminescent device, its step at least includes: provide a substrate, including first surface
With second surface, wherein first surface is relative with second surface；Form at least one luminescence and be stacked in substrate
On first surface；Form a metal level on the second surface of substrate；There is provided one first laser at metal level
Output a plurality of aisle district and expose portion second surface；And provide one second laser to be radiated at metal level
The portion second surface that aisle district exposes is to form multiple extraction regions in substrate.
Accompanying drawing explanation
Fig. 1 is traditional light emitting element structure schematic diagram.
Fig. 2 is traditional luminous device structure schematic diagram.
Fig. 3 A to Fig. 3 K is manufacturing process structural representation of the present invention.
Fig. 4 is laser system structure and processing procedure schematic diagram
Fig. 5 A-Fig. 5 C is laser system structure and processing procedure schematic diagram
Main element symbol description
100 light-emitting component 10 transparency carriers
12 semiconductor laminated 14 electrodes
120 first conductive-type semiconductor layer 122 active layers
124 second conductive-type semiconductor layer 200 light-emitting devices
20 carrier 202 circuit
22 solder 24 electric connection structures
30 substrate 302 second surfaces
The luminous lamination of 304 first surfaces 32
310 first conductive-type semiconductor layer 312 active layers
314 second conductive-type semiconductor layer 36 aisle district
37 extraction regions 60 first laser
70 second laser 300 light-emitting components
38 oxidic, transparent, conductive layers 40 electrodes
90 chase 400 laser systems
401 first platform 500 laser systems
501 first platform 502 second platforms
503 the 3rd platform 80 abluents
Detailed description of the invention
The open a kind of light-emitting component of the present invention, a kind of about the luminous unit carrying out twice substrate cut
Part and manufacture method thereof.In order to the narration making the present invention is more detailed with complete, refer to description below also
Coordinating the accompanying drawing of Fig. 3 A to Fig. 3 K, in figure, the ratio of each layer is only signal, is not in accordance with actual size
Amplify.
Fig. 3 A to Fig. 3 K is manufacturing process structural representation of the present invention, as shown in Figure 3A, it is provided that a base
Plate 30, wherein substrate 30 includes first surface 304 and second surface 302, wherein a first surface
304 is relative with second surface 302；Then, as shown in Figure 3 B, multiple semiconductor epitaxial layers is formed
31 on the first surface 304 of this substrate 30, and wherein semiconductor epitaxial layers 31 the most at least includes
One first conductive-type semiconductor layer 310, active layer 312, and one second conductive-type semiconductor layer 314.
Subsequently, as shown in Figure 3 C, photoetching technique is utilized to etch above-mentioned semiconductor epitaxial layers 31, with exposed
Part substrate 30 and make semiconductor epitaxial layers 31 form the luminous lamination 32 of multiple mesa-shaped structure, wherein
First conductive-type semiconductor layer 310 of each luminous equal exposed part of lamination 32.
The material of above-mentioned substrate 30 can be the transparent base such as sapphire (Sapphire), zinc oxide (ZnO)
Plate, the most then be to use sapphire substrate；And luminescence lamination 32 from bottom to top includes first
Conductive-type semiconductor layer 310, active layer 312 and the second conductive-type semiconductor layer 314, its material bag
Include one or more material selected from gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N)
And the group that silicon (Si) is constituted, such as gallium nitride (GaN) series material or AlGaInP (AlGaInP)
Series material etc..
Afterwards, for another example with shown in Fig. 3 D, luminous lamination 32 forms an etch protection layer 34,
In other embodiments, this etch protection layer 34 can also cover at luminous lamination 32 and substrate 30 simultaneously
On, the material of the most above-mentioned etch protection layer 34 can be silicon dioxide (SiO2) or silicon nitride (SiNx)
Deng material.
Afterwards, second surface 302 to the thickness of grinding base plate 30 is less than 200 μm, and at substrate 30
A metal level 50 is formed on second surface 302.
Subsequently, as shown in Fig. 3 E-Fig. 3 F, it is provided that one first laser 60, with energy less than 1.5W, speed
Degree more than 40mm/sec laser beam irradiate metal level 50, formed on metal level 50 a plurality of walk
Road district 36, it is about 30-50 μm at the width W1 of nearly substrate 30 side, and makes the of part substrate 30
Two surfaces 302 are exposed out.Fig. 3 G is the upper TV structure schematic diagram of Fig. 3 F, as shown in Figure 3 G,
In the embodiment of the present invention, it is placed around multiple luminescence with a plurality of aisle district 36 that the first laser beam is formed
Lamination 32 is around.In one embodiment, this laser beam can be a Nd-YAG UV laser.
In one embodiment, then, can be with the laser on acid solution, water or purge of gas aisle district 36
By-product.In one embodiment, can etch under the temperature conditions of 100 to 300 degree Celsius with etching solution
The by-product that above-mentioned aisle district causes for 36 about 10 to 50 minutes with removing laser, in the present embodiment,
Preferably operating condition is under the temperature conditions of 150 to 250 degree Celsius, with sulphuric acid (H2SiO4) and phosphorus
The concentration of acid (H3PO4) etches about 20 to 40 minutes than the etching solution being three to；In other embodiments
In, etching solution also can be selected for phosphoric acid solution；In other embodiments, it is possible to use nitrogen or water clean.
Afterwards, as shown in figure 3h, it is provided that one second laser 70, with laser energy 0.05～0.35W, speed
Degree 100～600mm/sec and focal length are that the laser beam of distance substrate 30-60 μm irradiates the of substrate 30
Two surfaces 302, make the second laser 70 focus on substrate 30 internal, and are internally formed multiple poly-at substrate
Light district 37, therefore substrate 30 surface will not be damaged, and can reduce extinction effect.The length of this extraction regions
Degree L2 is about 10-100 μm, and width W2 may be less than 5 μm, and the shape of extraction regions can be round dot
Shape, cuboid or other figures.In one embodiment, this laser beam can be that an infrared ray or green glow swash
Light, can be such as Nd-YAG frequency femtosecond (femto-second) or psec (pico-second laser),
Nd-YVO4 laser, Nd-YLF laser or titanium sapphire laser (titanium laser).
Finally, more as shown in fig. 31, the first surface 304 of splitting substrate 30, to form multiple luminescence
Element 300.Moreover, more can as shown in figure 3j, before splitting, form at least one electrically conducting transparent
Oxidation (Transparent Conductive Oxide, TCO) layer 38 is on luminous lamination 32 and at least one
After electrode 40 is on oxidic, transparent, conductive layers 38, then cleave the first surface 304 of substrate 30, to be formed
Multiple light-emitting components 300.In one embodiment, as shown in Fig. 3 K, it is possible to first at the first of substrate 30
It is after 90s that surface 304 forms a chase, then cleaves to form multiple light-emitting component 300.
The material of oxidic, transparent, conductive layers 38 is selected from including that one or more material is selected from Indium sesquioxide.
Stannum (ITO), Indium sesquioxide. (InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin (ATO), oxygen
Change the group that antimony zinc (AZO) is constituted with zinc oxide (ZnO).
In an embodiment of the present invention, above-mentioned first laser 60 and the second laser 70 can be incorporated into same sharp
Photosystem 400, among 500, and the first laser 60 can be different LASER Light Sources from the second laser 70.
Refer to description below and coordinate Fig. 4 to Fig. 5 C.
Fig. 4 is laser system structure and processing procedure schematic diagram, as shown in Figure 4, is making above-mentioned Fig. 3 E's
During processing procedure, the first surface 304 of substrate is placed in downwards on the first platform 401, and makes metal level
50 expose.Afterwards according to above-mentioned processing procedure, first irradiate metal level 50 with the first laser 60, at metal level 50
On form a plurality of aisle district 36, and make the portion second surface 302 of substrate 30 exposed out after,
Irradiate, with the second laser 70, the second surface 302 that substrate 30 exposes again, and be internally formed at substrate 30
Multiple extraction regions 37.In one embodiment, it is possible to before irradiating the second laser 70, the most flat first
The laser by-product in aisle district 36 is cleaned on platform 401.In another embodiment, it is possible to flat first
While the laser by-product on acid solution, water or purge of gas aisle district 36, second is carried out on platform 401
The irradiation of laser 70.
In another embodiment, Fig. 5 A-Fig. 5 C is laser system structure and processing procedure schematic diagram, such as Fig. 5 A
Shown in, when making the processing procedure of above-mentioned Fig. 3 E, the first surface 304 of substrate is placed in downwards first
On platform 501, and metal level 50 is made to expose.Afterwards according to above-mentioned processing procedure, first shine with the first laser 60
Penetrate metal level 50, on metal level 50, form a plurality of aisle district 36, and make the part of substrate 30
Two surfaces 302 exposed out after, substrate is sent to the second platform 502 and shines with the second laser 70 again
Penetrate the exposed second surface 302 of substrate 30, and be internally formed multiple extraction regions 37 at substrate 30.Such as figure
Shown in 5C, in one embodiment, it is possible to after irradiating the first laser 60, first substrate 30 is transmitted
With abluent 80 to the 3rd platform 503, such as the laser in acid solution, water or purge of gas aisle district 36
By-product.Afterwards, then by substrate 30 it is sent to carry out on the second platform 502 irradiation of the second laser 70.
Embodiment described above is only technological thought and the feature of the explanation present invention, and its purpose makes invention
Technology person with usual knowledge in their respective areas will appreciate that present disclosure and implements according to this, when can not
Limit the scope of the present invention with it, the most generally change according to the equalization that spirit disclosed in this invention is made or repair
Decorations, must contain in the present invention.
Claims (11)
1. a method of manufacturing luminescent device, including:
Substrate, including first surface and second surface, wherein this first surface and this second surface phase are provided
Right；
Form at least one luminescence to be stacked on this first surface of this substrate；
Form a metal level on this second surface of this substrate；
There is provided the first laser at this metal level to output a plurality of aisle district and to expose this second surface of part；
With the laser by-product on acid solution, water or this aisle district of purge of gas；
The second laser is provided to be irradiated into inside this substrate from this second surface that this substrate exposes, with at this
Substrate is internally formed multiple extraction regions,
The most the plurality of extraction regions has a spacing apart from this first surface and this second surface, and this is each
The a length of 10-100 μm of extraction regions；And
This substrate is cleaved to form multiple light-emitting components along the plurality of extraction regions at this substrate.
Method of manufacturing luminescent device the most according to claim 1, wherein this first laser is Nd-YAG
UV laser, and energy is less than 1.5W, speed is more than 40mm/sec.
Method of manufacturing luminescent device the most according to claim 1, wherein this second laser is infrared ray
Laser, and energy is 0.05～0.35W, speed is 100～600mm/sec, and focal length is distance substrate
30-60μm。
Method of manufacturing luminescent device the most according to claim 3, wherein this infrared laser is
Nd-YAG frequency femtosecond or picosecond laser, Nd-YVO4 laser, Nd-YLF laser or titanium sapphire swash
Light.
Method of manufacturing luminescent device the most according to claim 1, wherein forms the step of this luminescence lamination
Suddenly, at least include:
Form the first conductive-type semiconductor layer on this substrate；
Form active layer on this first conductive-type semiconductor layer；
Form the second conductive-type semiconductor layer on this active layer；
Photoetching technique is utilized to etch this first conductive-type semiconductor layer, this active layer and this second conductivity type
Semiconductor layer, to form the luminous lamination of multiple mesa-shaped structure；
Wherein, top view seeing it, this plurality of aisle district folds around the luminescence of the plurality of mesa-shaped structure respectively
Layer.
Method of manufacturing luminescent device the most according to claim 1, wherein the width in those aisle districts is
30-50μm。
Method of manufacturing luminescent device the most according to claim 1, wherein being shaped as of those extraction regions
Round point shape, cuboid or other figures, and width is less than 5 μm.
Method of manufacturing luminescent device the most according to claim 1, also includes:
Forming multiple chase on the first surface, this chase each is corresponding to one of those extraction regions；With
And
This substrate is cleaved to form multiple luminous unit along those extraction regions and those chases at this substrate
Part.
9. a light-emitting component, including:
Substrate, including first surface, relative to the second surface of this first surface and multiple side surface；
Luminous lamination is positioned on this first surface of this substrate；
Metal level is positioned on this second surface of this substrate, wherein this metal level have a plurality of aisle district around
This luminescence lamination and expose part this second surface；And
Multiple extraction regions are positioned on those side surfaces of this substrate, and this each extraction regions is a length of
10-100 μm and there is a spacing apart from this first surface and this second surface.
Light-emitting component the most according to claim 9, wherein the shape of those extraction regions can be round dot
Shape, cuboid or other figures.
11. light-emitting components according to claim 9, wherein this luminescence lamination includes:
First conductive-type semiconductor layer, is positioned on this substrate；
Active layer, is positioned on this first conductive-type semiconductor layer；And
Second conductive-type semiconductor layer, is positioned on this active layer, and the material of this luminescence lamination includes one
Or more than one material selected from gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and
The group that silicon (Si) is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610078328.4A CN105720009A (en) | 2010-01-28 | 2010-01-28 | Light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610078328.4A CN105720009A (en) | 2010-01-28 | 2010-01-28 | Light-emitting diode and manufacturing method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101057795A Division CN102142397A (en) | 2010-01-28 | 2010-01-28 | Light-emitting diode (LED) and method for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105720009A true CN105720009A (en) | 2016-06-29 |
Family
ID=56156524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610078328.4A Pending CN105720009A (en) | 2010-01-28 | 2010-01-28 | Light-emitting diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105720009A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN111370369A (en) * | 2020-03-20 | 2020-07-03 | 西安唐晶量子科技有限公司 | Separation method of metal substrate light-emitting device wafer |
| CN114122202A (en) * | 2021-11-11 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Chip and preparation method thereof |
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| JPH1044139A (en) * | 1996-08-07 | 1998-02-17 | Rohm Co Ltd | Method for dividing board and manufacture of light emitting element using the board dividing |
| US20050006728A1 (en) * | 2003-07-10 | 2005-01-13 | Yoshinori Shizuno | Semiconductor device and method of manufacturing the same |
| KR20060097682A (en) * | 2006-08-16 | 2006-09-14 | 최우범 | Light emitting diode and manufacturing method for the same |
| JP2008060167A (en) * | 2006-08-29 | 2008-03-13 | Nichia Chem Ind Ltd | Semiconductor light-emitting element, manufacturing method thereof, and light-emitting device using same |
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| JPH1044139A (en) * | 1996-08-07 | 1998-02-17 | Rohm Co Ltd | Method for dividing board and manufacture of light emitting element using the board dividing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110970538A (en) * | 2019-11-22 | 2020-04-07 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN110970538B (en) * | 2019-11-22 | 2022-03-15 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN111370369A (en) * | 2020-03-20 | 2020-07-03 | 西安唐晶量子科技有限公司 | Separation method of metal substrate light-emitting device wafer |
| CN114122202A (en) * | 2021-11-11 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Chip and preparation method thereof |
| CN114122202B (en) * | 2021-11-11 | 2023-05-16 | 重庆康佳光电技术研究院有限公司 | Chip and preparation method thereof |
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Application publication date: 20160629 |