CN105718985B - The anti-tseudo circuit of RFID - Google Patents
The anti-tseudo circuit of RFID Download PDFInfo
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- CN105718985B CN105718985B CN201410734726.8A CN201410734726A CN105718985B CN 105718985 B CN105718985 B CN 105718985B CN 201410734726 A CN201410734726 A CN 201410734726A CN 105718985 B CN105718985 B CN 105718985B
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Abstract
The anti-tseudo circuit of RFID, is related to RFID technique.The present invention includes RFID unit, which is characterized in that further includes electrostatic breakdown unit and detection amplifying unit；The electrostatic breakdown unit includes breakdown NMOS tube and preposition protective circuit of diode, postposition protective circuit of diode; the end PAD connects the grid of breakdown NMOS tube by preposition protective circuit of diode, and the grid for puncturing NMOS tube also passes through postposition protective circuit of diode and connects the first output point；Puncture the source electrode and drain electrode ground connection of NMOS tube；First output point connects RFID unit by detecting amplifying unit.So that chip is changed internal state by electrostatic breakdown but is unlikely to damage.After electrostatic breakdown occurs, that is, ensure that chip can not be recycled, and can ensure that original tracing information can be correctly read.
Description
Technical field
The present invention relates to RFID techniques.
Background technique
RFID technique, that is, radio RF recognition technology is a kind of non-contacting automatic identification technology, the basic principle is that sharp
With radiofrequency signal and Space Coupling (inductance or electromagnetic coupling) or the transmission characteristic of radar reflection, realize to identified object from
Dynamic identification.RFID chip has begun for the anti-fake of article at present, such as High Grade Liquor is anti-fake.Fake producer returns in order to prevent
It receives and utilizes RFID antifalsification label, be usually in due course using tamper-evident, frangible technology and destroy RFID label tag, but RFID
Chip recycles after theoretically still being removed label, this is the anti-fake of one kind " mechanical damage " mode.There are also a kind of " electricity
Road destroy " mode it is anti-fake, such as Chinese invention patent " utilize electrostatic breakdown principle destroy bottle cap in RFID chip method "
(201210037777.6) a kind of method is disclosed, directly RFID chip is destroyed with the method for electrostatic breakdown, is solved
State the problem of RFID chip can be recovered.But RFID chip is once destroyed, the information of the inside can not be read completely,
Certain occasions will form inconvenience, carries out all at retailer for example, verifying for the first time, can not rule out retailer's malicious modification card reading
In the case of equipment, consumer can not voluntarily carry out secondary examination.
Summary of the invention
The technical problem to be solved by the invention is to provide the anti-tseudo circuits of RFID that one kind is capable of multiple authentication.
The present invention solve the technical problem the technical solution adopted is that, the anti-tseudo circuit of RFID, including RFID unit is special
Sign is, further includes electrostatic breakdown unit and detection amplifying unit；
The electrostatic breakdown unit includes breakdown NMOS tube NM0 and preposition protective circuit of diode, postposition diode protection
Circuit, the end PAD by preposition protective circuit of diode connect breakdown NMOS tube grid, puncture NMOS tube grid also pass through after
It sets protective circuit of diode and connects the first output point；Puncture the source electrode and drain electrode ground connection of NMOS tube；
First output point connects RFID unit by detecting amplifying unit.
Further, the preposition protective circuit of diode includes first resistor, second resistance, 3rd resistor, the one or two
Pole pipe, the second diode, third diode,
First resistor, second resistance, 3rd resistor are in sequential series between the end PAD and the grid of breakdown NMOS tube,
First diode plus earth, cathode connect the end PAD；
Second diode cathode ground connection, cathode connect the tie point of first resistor and second resistance；
Third diode cathode ground connection, cathode connect the tie point of second resistance and 3rd resistor.
The postposition protective circuit of diode includes the 4th resistance, the 5th resistance, the 6th resistance, the 4th diode, the 5th
Diode, the 6th diode,
4th resistance, the 5th resistance, the 6th resistance are in sequential series between the grid and the first output point of breakdown NMOS tube,
4th diode cathode ground connection, cathode connect the tie point of the 4th resistance and the 5th resistance；
5th diode cathode ground connection, cathode connect the tie point of the 5th resistance and the 6th resistance；
6th diode cathode ground connection, cathode connect the first output point.
The invention has the advantages that enabling chip to change internal state by electrostatic breakdown but being unlikely to damage.?
After electrostatic breakdown occurs, that is, ensure that chip can not be recycled, and can ensure that original tracing information can be correctly read.This
Invent it is simple and easy, it is low in cost, do not destroy RFID chip itself, i.e., the basic function of chip is constant after generation electrostatic breakdown,
Only internal state changes.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention.
Fig. 2 is the circuit diagram of electrostatic breakdown unit of the present invention.
Fig. 3 is the circuit diagram of detection amplifying unit of the invention.
Specific embodiment
Referring to Fig. 1~3.
The anti-tseudo circuit of RFID, including RFID unit further include electrostatic breakdown unit and detection amplifying unit；
The electrostatic breakdown unit includes breakdown NMOS tube NM0 and preposition protective circuit of diode, postposition diode protection
Circuit, the end PAD connect the grid of breakdown NMOS tube NM0 by preposition protective circuit of diode, puncture the grid of NMOS tube NM0 also
The first output point P0 is connected by postposition protective circuit of diode；Puncture the source electrode and drain electrode ground connection of NMOS tube NM0；
First output point P0 connects RFID unit by detecting amplifying unit.
The preposition protective circuit of diode includes first resistor R1, second resistance R2,3rd resistor R3, first diode
D1, the second diode D2, third diode D3,
First resistor R1, second resistance R2,3rd resistor the R3 grid in sequential series in the end PAD and breakdown NMOS tube NM0
Between,
First diode D1 plus earth, cathode connect the end PAD；
Second diode D2 plus earth, cathode connect the tie point of first resistor R1 and second resistance R2；
Third diode D3 plus earth, cathode connect the tie point of second resistance R2 and 3rd resistor R3.
The postposition protective circuit of diode includes the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 4th diode
D4, the 5th diode D5, the 6th diode D6,
4th resistance R4, the 5th resistance R5, the 6th resistance R6 are in sequential series defeated in the grid of breakdown NMOS tube NM0 and first
Out between point P0,
4th diode D4 plus earth, cathode connect the tie point of the 4th resistance R4 and the 5th resistance R5；
5th diode D5 plus earth, cathode connect the tie point of the 5th resistance R5 and the 6th resistance R6；
6th diode D6 plus earth, cathode meet the first output point P0.
The structure of the detection amplifying unit are as follows:
The source electrode of first PMOS tube PM1 connects the end UNK, and grid and drain electrode meet the first tie point P1, BN and terminate the first tie point
P1；
The source electrode of second PMOS tube PM2 connects the end UNK, and grid meets the first tie point P1, and drain electrode meets the second tie point P2；
The grid of third PMOS tube PM3 meets the first tie point P1, and source electrode connects the end UNK, and drain electrode meets third tie point P3；
First NMOS tube NM1 grid and drain electrode connect the first tie point P1, source electrode ground connection；
Second NMOS tube NM2 drain electrode connects the second tie point P2, grid and source electrode ground connection；
Third NMOS tube NM3 drain and gate connects the second tie point P2, source electrode ground connection；
4th NMOS tube NM4 grid meets the second tie point P2, source electrode ground connection, and drain electrode meets third tie point P3；
First output point P0 meets the second tie point P2 by resistance R0；
4th PMOS tube PM4 source electrode and substrate connect vdd terminal, and drain electrode connects the source electrode of the 5th PMOS tube PM5, and grid meets third company
Contact P3；
The substrate of 5th PMOS tube PM5 connects vdd terminal, and drain electrode meets the second output point OUT, and grid meets third tie point P3；
The substrate of 6th PMOS tube PM6 connects vdd terminal, grounded drain, and grid meets the second output point OUT, and source electrode connects the 4th
The drain electrode of PMOS tube PM4；
5th NMOS tube NM5 Substrate ground, drain electrode meet the second output point OUT, and grid meets third tie point P3；Source electrode connects
The drain electrode of six NMOS tube NM6；
6th NMOS tube NM6 source electrode and Substrate ground, grid meet third tie point P3；
The grid of 7th NMOS tube NM7 meets the second output point OUT, and drain electrode connects vdd terminal, and source electrode connects the 5th NMOS tube PM5's
Source electrode, Substrate ground；
Second output point OUT is detection signal output end of the amplifying unit to RFID unit.
The end UNK is the voltage source that a voltage is higher than VDD.
The end BN is bias voltage source.
The present invention increases an electrostatic breakdown unit in RFID chip.When the external world applies instantaneous electrostatic high-pressure, the unit
Controllable electrical breakdown occurs for interior particular electrical circuit, and state occurs physics and sexually revises；The unit also passes through number in interconnector and chip
Word circuit is connected, therefore digital circuit can identify the state change of electrostatic breakdown device.Entire RFID chip is to pass through line
Circle obtains energy from the external world and transmits information, when extraneous card reader passes through the data of particular address in coil reading RFID chip
When, RFID chip feeds back different information according to the state of electrostatic breakdown module.In this way, if electrostatic breakdown occurred, RFID
This state, and the status information returned when card reader reads the data of particular address can be remembered.
The present invention increases electrostatic breakdown state detecting information in original RFID information, during radio-frequency card card reading
It is sent to card reader by coil, can reflect whether the anti-counterfeiting chip is once breakdown in card reader one end.Specific to quotient
Product application, consumer can not only be known the production factory information of product by card reading information, can also know that the chip is
It is no to be reprocessed by recycling, effectively prevent the false making behavior reprocessed to anti-counterfeiting chip.
Specification has clearly illustrated necessary technology content of the invention, and those of ordinary skill can be according to specification
Implement the present invention, so it will not be repeated more specific technical detail.
Claims (3)
- The anti-tseudo circuit of 1.RFID, including RFID unit, which is characterized in that further include electrostatic breakdown unit and detection amplifying unit；The electrostatic breakdown unit includes breakdown NMOS tube (NM0) and preposition protective circuit of diode, postposition diode protection electricity Road, the end PAD connect the grid of breakdown NMOS tube (NM0) by preposition protective circuit of diode, puncture the grid of NMOS tube (NM0) Also pass through postposition protective circuit of diode connection the first output point (P0)；Puncture the source electrode and drain electrode ground connection of NMOS tube (NM0)；First output point (P0) connects RFID unit by detecting amplifying unit；The structure of the detection amplifying unit are as follows:The source electrode of first PMOS tube (PM1) connects the end UNK, and grid and drain electrode connect the first tie point (P1), and BN terminates the first tie point (P1)；The source electrode of second PMOS tube (PM2) connects the end UNK, and grid connects the first tie point (P1), and drain electrode meets the second tie point (P2)；The grid of third PMOS tube (PM3) connects the first tie point (P1), and source electrode connects the end UNK, and drain electrode meets third tie point (P3)；First NMOS tube (NM1) grid and drain electrode connect the first tie point (P1), source electrode ground connection；Second NMOS tube (NM2) drain electrode connects the second tie point (P2), grid and source electrode ground connection；Third NMOS tube (NM3) drain and gate connects the second tie point (P2), source electrode ground connection；4th NMOS tube (NM4) grid connects the second tie point (P2), and source electrode ground connection, drain electrode meets third tie point (P3)；First output point (P0) meets the second tie point (P2) by resistance (R0)；4th PMOS tube (PM4) source electrode and substrate connect vdd terminal, and drain electrode connects the source electrode of the 5th PMOS tube (PM5), and grid meets third company Contact (P3)；The substrate of 5th PMOS tube (PM5) connects vdd terminal, and drain electrode meets the second output point OUT, and grid meets third tie point (P3)；The substrate of 6th PMOS tube (PM6) connects vdd terminal, grounded drain, and grid meets the second output point OUT, and source electrode meets the 4th PMOS Manage the drain electrode of (PM4)；5th NMOS tube (NM5) Substrate ground, drain electrode meet the second output point OUT, and grid meets third tie point (P3)；Source electrode connects The drain electrode of six NMOS tubes (NM6)；6th NMOS tube (NM6) source electrode and Substrate ground, grid meet third tie point (P3)；The grid of 7th NMOS tube (NM7) meets the second output point OUT, and drain electrode connects vdd terminal, and source electrode connects the 5th NMOS tube (PM5) Source electrode, Substrate ground；Second output point OUT is detection signal output end of the amplifying unit to RFID unit；The end UNK is the voltage source that a voltage is higher than VDD, and the end BN is bias voltage source.
- 2. the anti-tseudo circuit of RFID as described in claim 1, which is characterized in that the preposition protective circuit of diode includes first Resistance (R1), second resistance (R2), 3rd resistor (R3), first diode (D1), the second diode (D2), third diode (D3),First resistor (R1), second resistance (R2), 3rd resistor (R3) are in sequential series in the end PAD and breakdown NMOS tube (NM0) Between grid,First diode (D1) plus earth, cathode connect the end PAD；Second diode (D2) plus earth, cathode connect the tie point of first resistor (R1) and second resistance (R2)；Third diode (D3) plus earth, cathode connect the tie point of second resistance (R2) and 3rd resistor (R3).
- 3. the anti-tseudo circuit of RFID as described in claim 1, which is characterized in that the postposition protective circuit of diode includes the 4th Resistance (R4), the 5th resistance (R5), the 6th resistance (R6), the 4th diode (D4), the 5th diode (D5), the 6th diode (D6),4th resistance (R4), the 5th resistance (R5), the 6th resistance (R6) are in sequential series in the grid of breakdown NMOS tube (NM0) and the Between one output point (P0),4th diode (D4) plus earth, cathode connect the tie point of the 4th resistance (R4) and the 5th resistance (R5)；5th diode (D5) plus earth, cathode connect the tie point of the 5th resistance (R5) and the 6th resistance (R6)；6th diode (D6) plus earth, cathode meet the first output point (P0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734726.8A CN105718985B (en) | 2014-12-04 | 2014-12-04 | The anti-tseudo circuit of RFID |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734726.8A CN105718985B (en) | 2014-12-04 | 2014-12-04 | The anti-tseudo circuit of RFID |
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| Publication Number | Publication Date |
|---|---|
| CN105718985A CN105718985A (en) | 2016-06-29 |
| CN105718985B true CN105718985B (en) | 2019-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410734726.8A Active CN105718985B (en) | 2014-12-04 | 2014-12-04 | The anti-tseudo circuit of RFID |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3340114B1 (en) * | 2016-12-22 | 2020-09-30 | EM Microelectronic-Marin SA | Rfid circuit with two communication frequencies provided with a tamper-proof loop |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201194115Y (en) * | 2008-04-03 | 2009-02-11 | 北京顺特科技有限公司 | Friction type radio frequency anti-theft label preventing reusing |
| CN102439609A (en) * | 2009-05-21 | 2012-05-02 | 传感电子有限责任公司 | Method and system for deactivation of combination eas/rfid tags |
-
2014
- 2014-12-04 CN CN201410734726.8A patent/CN105718985B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201194115Y (en) * | 2008-04-03 | 2009-02-11 | 北京顺特科技有限公司 | Friction type radio frequency anti-theft label preventing reusing |
| CN102439609A (en) * | 2009-05-21 | 2012-05-02 | 传感电子有限责任公司 | Method and system for deactivation of combination eas/rfid tags |
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| Publication number | Publication date |
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| CN105718985A (en) | 2016-06-29 |
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Effective date of registration: 20190312 Address after: 621000 No. 128 Mianxing East Road, Mianyang High-tech Zone, Sichuan Province Applicant after: Sichuan Kiloway Electron Inc. Address before: 214434 B3 Floor, Cyberport, Yangtze River Creative Intelligence Industrial Park, 201 Jinshan Road, Jiangyin City, Wuxi City, Jiangsu Province Applicant before: Jiangsu kiloway Electronic Technology Co., Ltd. |
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Effective date of registration: 20191111 Address after: 621000 a412, No.133, mianxing East Road, high tech Zone, Mianyang City, Sichuan Province Patentee after: Sichuan kailuwei Technology Co., Ltd Address before: 621000 Sichuan city of Mianyang province high tech Zone Mian Xing Road No. 128 Patentee before: Sichuan Kiloway Electron Inc. |