CN104714193A - High-precision low-power-consumption power glitch detection circuit - Google Patents
High-precision low-power-consumption power glitch detection circuit Download PDFInfo
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- CN104714193A CN104714193A CN201410427374.1A CN201410427374A CN104714193A CN 104714193 A CN104714193 A CN 104714193A CN 201410427374 A CN201410427374 A CN 201410427374A CN 104714193 A CN104714193 A CN 104714193A
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Abstract
The invention relates to a high-precision low-power-consumption power glitch detection circuit. The detection circuit is composed of a sampling module, a temperature and technology angle compensation module, a positive glitch detection module, a negative glitch detection module and a phase inverter. Upward and downward glitch attacks on a power source can be rapidly detected. The specially designed sampling module can adjust the depth of detected glitches according to requirements, and the precision of detection points can be greatly improved through the specially designed temperature and technology angle compensation module.
Description
Technical field
The present invention is the power supply burr testing circuit of special construction, is used for detecting attacking for the burr of power supply in smart card security system, belongs to Analog Circuit Design field.
Background technology
Power supply burr testing circuit (Glitch-Detector) is called for short GD, is used for detecting the burr on supply voltage.Glitch in this module refers to power supply burr (Power Glitch), but not the burr of clock or data.GD module detects for the burr signal on power supply, when detecting that burr signal produces, produces reset signal, makes system carry out corresponding reset operation.Why design special module of carrying out detecting for power supply burr, because flogic system is when power supply exists burr, easy sequential or the upset producing mistake, system is made to enter abnormal operation, cause internal data mistake, operating mistake, or the abnormal readout error of memory content.
Such as, in the security attack of smart card, the direct fault location formula (FaultInjection) based on power supply burr (Power Glitch) is attacked and is generally applied.In this attack, assailant adds burr interference to card internal electric source, in system, introduce fault, thus reaches the object obtaining system encryption algorithm, enciphered message.And for example, in the power environment that some is severe, certain model card has less probability to produce abnormal data reading, has influence on normal use and the security of card.
Therefore, adding of GD module can strengthen the protection of smart card system to power supply burr, thus increases robustness and the security of system.
In recent years, there are some comparatively ripe burr testing circuits (as CN101943728A and CN101943729A), these circuit, reaction velocity is fast, structure is simple, power consumption is very low, but its check point precision is not high, and its check point can change along with the change of temperature and process corner.
Summary of the invention
Along with the development of power safety module, the requirement that people detect for power supply burr is more and more higher.Some application needs security module and power-supply system to match, and only report to the police to the burr of certain depth, all the other burrs do not produce warning; It is higher that some applies the precision needing power supply burr to detect.Therefore my invention a kind of burr can be regulated as required to detect the degree of depth sample circuit and the precision that detects to improve burr of a kind of temperature, process corner compensating circuit.
As shown in Figure 1, described sampling module is connected with temperature process angle compensation circuit PM4, PM5 by resistance R1, R2, R3, C1 and R1, R2, PM4, PM5 parallel connection, C2 and R2, R3 compose in parallel, one end of electric capacity C1 is GND, the common node VDDIN2 of the other end is one end of the common node VDDIN1 of R2, R3, electric capacity C2 to be the VDD other end be R1, R2;
Described temperature process angle compensation module is made up of PM4, PM5, and the grid end of PM4 and the grid end of drain terminal common ground, source and PM5 and drain terminal are to connecing, and one end of the source connecting resistance R1 of PM5, PM4 and PM5 forms two diode-connected.
Described negative burr detection module is made up of PMOS PM1, NM1, NM3, PM3; PM1 source meets VDDIN1, grid termination VDD, drain terminal meets B, and NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, form current mirror-with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, PM3 source meets VDD, and grid meet VDDIN2.Negative burr detection module realizes detecting in real time the negative burr that power supply occurs.
Described positive burr detection module is made up of PMOS PM2, NM1, NM3, PM3; PM2 source meets VDDIN2, grid termination VDDIN1, drain terminal meets B, and NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, form current mirror-with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, PM3 source meets VDD, and grid meet VDDIN2.Positive burr detection module realizes detecting in real time the negative burr that power supply occurs.
Its principle of work is as follows:
When VDD produces negative sense burr as shown in Figure 2, due to the existence of C1, VDDIN1 can keep a period of time, now the source of PM1 pipe meets VDDIN1, grid termination VDD, burr minimum voltage is Vneg as shown in Figure 2, if VDDIN1-Vneg > is Vth
pM1then PM1 is by conducting, and now NM1 can generation current, thus raises node C, because the connection NM3 of current mirror also can conducting, thus is drawn by node A as GND, VOUT produce low level alerting signal; After VDD reverts to normal voltage voltage from Vneg, NM3 disconnects, and PM3 conducting, A point voltage slowly retracts VDD by PM3, and alerting signal terminates.
When VDD produces forward burr, due to the existence of C2, VDDIN2 can change rapidly along with the change of VDD, and due to the existence of C1, VDDIN1 can keep a period of time, if now Vpos-VDDIN1 > Vth
pM2, then PM2 is by conducting, and now NM1 can generation current, thus raises node C, because the connection NM3 of current mirror also can conducting, thus is drawn by node A as GND, VOUT produce low level alerting signal; After VDD reverts to normal voltage voltage from Vneg, NM3 disconnects, and PM3 conducting, A point voltage slowly retracts VDD by PM3, and alerting signal terminates.
This circuit can regulate the DC partial voltage value of VDDIN1 and VDDIN2 to regulate the detection degree of depth of check point Vneg and Vpos, according to formula VDDIN1-Vneg > Vth
pM1if the DC voltage of VDDIN1 is higher, then Vneg also can become large, if instead VDDIN1 is lower, then needs lower Vneg to meet inequality.
Wherein the principle of temperature process angle compensation module is as follows, when temperature and process corner change, and the threshold voltage vt h of PM1 pipe and PM2 pipe
pM1and Vth
pM2can change, if now want to ensure that check point Vneg and Vpos is constant, then need the VDDIN1 that structure one changes with temperature and process corner.In Fig. 1, temperature and process corner compensating module PM4 and PM5 just well complete this conception.Work as Vth
pM1when becoming large, the Vth of PM4 and PM5 also can become large, and the voltage through electric resistance partial pressure VDDIN1 also can become large, now regulates the value of R1, R2, R3 then can make inequality VDDIN1-Vneg > Vth
pM1set up.Thus achieve check point Vneg substantially not with temperature and process corner change and change, substantially increase accuracy of detection.
The electric current that the quiescent current of this circuit only has supply voltage to produce on resistance string, remaining circuit does not have power consumption when static state.
(1) performance simulation
As shown in Figure 3, under different temperatures and process corner situation, VDDIN1 has different DC voltage values, and the threshold value Vth that so just can compensate PM1 and PM2 in Fig. 1 changes with temperature and process corner change the error produced.
Fig. 4,5,6 give tt27 °, ss-40 °, check point simulation result under ff105 ° condition, its downward burr check point is respectively 1.34V, and 1.39V, 1.3V error is less than 50mV.
Accompanying drawing explanation
Fig. 1 GD core circuit structure, wherein VDD is power input, and GND is ground input end, and VOUT is testing circuit output terminal
Fig. 2 VDD burr schematic diagram, wherein VDD is supply voltage, Vneg and Vpos represents downward burr minimum voltage and upwards burr ceiling voltage respectively, tr and tf becomes time required for VDD for VDD becomes Vneg and Vneg, and tpwl is the time that Vneg and Vpos continues
Fig. 3 with the VDDIN1 of temperature and process corner change, be respectively in figure ss-40 °, tt27 °, VDDIN1 under ff105 ° three kinds of conditions quiescent voltage
Fig. 4 is the check point scanning result under tt27 ° of condition, can find out whether VOUT can produce alerting signal " low " when the downward burr of different Vneg.
Fig. 5 is the check point spot scan result under ss-40 ° of condition, can find out whether VOUT can produce alerting signal " low " when the downward burr of different Vneg.
Fig. 6 is the check point spot scan result under ff105 ° of condition, can find out whether VOUT can produce alerting signal " low " when the downward burr of different Vneg.
Embodiment
As shown in Figure 1, described sampling module is connected with temperature process angle compensation circuit PM4, PM5 by resistance R1, R2, R3, C1 and R1, R2, PM4, PM5 parallel connection, C2 and R2, R3 compose in parallel, one end of electric capacity C1 is GND, the common node VDDIN2 of the other end is one end of the common node VDDIN1 of R2, R3, electric capacity C2 to be the VDD other end be R1, R2;
Described temperature process angle compensation module is made up of PM4, PM5, and the grid end of PM4 and the grid end of drain terminal common ground, source and PM5 and drain terminal are to connecing, and one end of the source connecting resistance R1 of PM5, PM4 and PM5 forms two diode-connected.
Described negative burr detection module is made up of PMOS PM1, NM1, NM3, PM3; PM1 source meets VDDIN1, grid termination VDD, drain terminal meets B, and NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, form current mirror-with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, PM3 source meets VDD, and grid meet VDDIN2.Negative burr detection module realizes detecting in real time the negative burr that power supply occurs.
Described positive burr detection module is made up of PMOS PM2, NM1, NM3, PM3; PM2 source meets VDDIN2, grid termination VDDIN1, drain terminal meets B, and NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, form current mirror-with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, PM3 source meets VDD, and grid meet VDDIN2.Positive burr detection module realizes detecting in real time the negative burr that power supply occurs.
Its principle of work is as follows:
When VDD produces negative sense burr as shown in Figure 2, due to the existence of C1, VDDIN1 can keep a period of time, now the source of PM1 pipe meets VDDIN1, grid termination VDD, burr minimum voltage is Vneg as shown in Figure 2, if VDDIN1-Vneg > is Vth
pM1then PM1 is by conducting, and now NM1 can generation current, thus raises node C, because the connection NM3 of current mirror also can conducting, thus is drawn by node A as GND, VOUT produce low level alerting signal; After VDD reverts to normal voltage voltage from Vneg, NM3 disconnects, and PM3 conducting, A point voltage slowly retracts VDD by PM3, and alerting signal terminates.
When VDD produces forward burr, due to the existence of C2, VDDIN2 can change rapidly along with the change of VDD, and due to the existence of C1, VDDIN1 can keep a period of time, if now Vpos-VDDIN1 > Vth
pM2, then PM2 is by conducting, and now NM1 can generation current, thus raises node C, because the connection NM3 of current mirror also can conducting, thus is drawn by node A as GND, VOUT produce low level alerting signal; After VDD reverts to normal voltage voltage from Vneg, NM3 disconnects, and PM3 conducting, A point voltage slowly retracts VDD by PM3, and alerting signal terminates.
This circuit can regulate the DC partial voltage value of VDDIN1 and VDDIN2 to regulate the detection degree of depth of check point Vneg and Vpos, according to formula VDDIN1-Vneg > Vth
pM1if the DC voltage of VDDIN1 is higher, then Vneg also can become large, if instead VDDIN1 is lower, then needs lower Vneg to meet inequality.
Wherein the principle of temperature process angle compensation module is as follows, when temperature and process corner change, and the threshold voltage vt h of PM1 pipe and PM2 pipe
pM1and Vth
pM2can change, if now want to ensure that check point Vneg and Vpos is constant, then need the VDDIN1 that structure one changes with temperature and process corner.In Fig. 1, temperature and process corner compensating module PM4 and PM5 just well complete this conception.Work as Vth
pM1when becoming large, the Vth of PM4 and PM5 also can become large, and the voltage through electric resistance partial pressure VDDIN1 also can become large, now regulates the value of R1, R2, R3 then can make inequality VDDIN1-Vneg > Vth
pM1set up.Thus achieve check point Vneg substantially not with temperature and process corner change and change, substantially increase accuracy of detection.
First, according to the electric current in system requirements determination sampling module required for resistance string, then according to the voltage determination resistance string all-in resistance size of operating voltage and PM4, PM5.
Secondly, the degree of depth Vpos of burr up and down and the Vneg that need detection is determined, then according to formula Vpos-VDDIN1 > Vth
pM2with VDDIN1-Vneg > Vth
pM1regulating resistance partial pressure value.
Finally, according to Fig. 1, circuit carries out circuit simulation, determines each metal-oxide-semiconductor breadth length ratio.
To sum up, the present invention, by above technical scheme, can detect the burr signal to attack that power supply occurs in real time, and can regulate the degree of depth that can detect burr for system requirements, and have high precision, low-power consumption, area is little simultaneously, portable strong feature.
Claims (4)
1. a high-precision low-power consumption power supply burr testing circuit, is characterized in that: this circuit comprises sampling module, temperature process angle compensation module, positive burr detection module, negative burr detection module, phase inverter; Wherein:
Described sampling module is connected with PM4, the PM5 in temperature process angle compensation module by resistance R1, R2, R3, electric capacity C1 and R1, R2, PM4, PM5 parallel connection, electric capacity C2 and R2, R3 compose in parallel, one end of C1 is GND, the common node VDDIN2 of the other end is one end of the common node VDDIN1 of R2, R3, electric capacity C2 to be the VDD other end be R1, R2;
Described temperature process angle compensation module is made up of PM4, PM5, the grid end of PM4 and the grid end of drain terminal common ground, source and PM5 and drain terminal to connecing, one end of the source connecting resistance R1 of PM5, PM4 and PM5 forms two diode-connected;
Described negative burr detection module is made up of PM1, NM1, NM3, PM3; PM1 source meets VDDIN1, grid termination VDD, drain terminal meets B, NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, current mirror-is formed with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, and PM3 source meets VDD, grid meet VDDIN2, and negative burr detection module realizes detecting in real time the negative burr that power supply occurs;
Described positive burr detection module is made up of PMOS PM2, NM1, NM3, PM3; PM2 source meets VDDIN2, grid termination VDDIN1, drain terminal meets B, and NM1 grid end and drain terminal meet B, source meets GND, NM3 grid termination B, form current mirror-with NM1, source meets GND, and NM3 drain terminal and PM3 drain terminal meet common node A jointly, PM3 source meets VDD, and grid meet VDDIN2; Positive burr detection module realizes detecting in real time the negative burr that power supply occurs;
Phase inverter is made up of PM6, NM6, PM7, NM7; PM6 grid end and NM6 grid end jointly connect common node A, PM6 drain terminal and NM6 drain terminal connects with PM7 grid end and NM7 grid end jointly, and PM6 source meets VDD, and NM6 source meets GND, and PM7 drain terminal and NM7 drain terminal meet VOUT jointly, and PM7 source meets VDD, and NM7 source meets GND.
2. circuit as claimed in claim 1, is characterized in that described sampling module by the value regulating the value of R1, R2, R3 to set VDDIN1 and VDDIN2 flexibly, can realize with this ability detecting burr depth adjustable.
3. circuit as claimed in claim 1, is characterized in that described temperature process angle compensation module utilizes PM4 and PM5 in resistance string, form the voltage of two Vth, constructs the VDDIN1 with temperature and process corner change with this.
4. circuit as claimed in claim 1, it is characterized in that the breadth length ratio of NM3 in described positive and negative burr detection module is greater than the breadth length ratio of NM1, the length of PM3 is less than wide, and the grid of PM3 also can other positions in stake resistance string.
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| CN201410427374.1A CN104714193A (en) | 2014-08-27 | 2014-08-27 | High-precision low-power-consumption power glitch detection circuit |
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| CN201410427374.1A CN104714193A (en) | 2014-08-27 | 2014-08-27 | High-precision low-power-consumption power glitch detection circuit |
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| CN201410427374.1A Pending CN104714193A (en) | 2014-08-27 | 2014-08-27 | High-precision low-power-consumption power glitch detection circuit |
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Cited By (11)
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| CN105116353A (en) * | 2015-09-29 | 2015-12-02 | 成都贝发信息技术有限公司 | Low-power consumption power source detector based on information system |
| CN105116318A (en) * | 2015-09-02 | 2015-12-02 | 电子科技大学 | Method for realizing burr detection in logic analyzer |
| CN105242220A (en) * | 2015-09-29 | 2016-01-13 | 成都贝发信息技术有限公司 | Wide-range power supply detection apparatus based on information system |
| CN105367375A (en) * | 2015-12-08 | 2016-03-02 | 陕西华电榆横煤化工有限公司 | Separation system and method of methanol to aromatics by-product liquefied gas |
| CN107462827A (en) * | 2017-08-31 | 2017-12-12 | 北京智芯微电子科技有限公司 | Power supply burr detection circuit with internal voltage regulator |
| CN108169694A (en) * | 2017-12-19 | 2018-06-15 | 成都三零嘉微电子有限公司 | It is a kind of that there is temperature, the burr detection circuit of process compensation function |
| CN110208722A (en) * | 2019-07-15 | 2019-09-06 | 珠海格力电器股份有限公司 | Detect the device and method thereof of DC power supply stability |
| WO2020257958A1 (en) * | 2019-06-24 | 2020-12-30 | 深圳市汇顶科技股份有限公司 | Glitch signal detection circuit, security chip, and electronic device |
| WO2021026914A1 (en) * | 2019-08-15 | 2021-02-18 | 深圳市汇顶科技股份有限公司 | Power glitch signal detection circuit, secure chip and electronic device |
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| US11609277B2 (en) | 2019-06-24 | 2023-03-21 | Shenzhen GOODIX Technology Co., Ltd. | Power glitch signal detection circuit and security chip |
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| CN105116318A (en) * | 2015-09-02 | 2015-12-02 | 电子科技大学 | Method for realizing burr detection in logic analyzer |
| CN105116318B (en) * | 2015-09-02 | 2018-02-02 | 电子科技大学 | A kind of method that burr detection is realized in logic analyser |
| CN105242220A (en) * | 2015-09-29 | 2016-01-13 | 成都贝发信息技术有限公司 | Wide-range power supply detection apparatus based on information system |
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| CN105367375A (en) * | 2015-12-08 | 2016-03-02 | 陕西华电榆横煤化工有限公司 | Separation system and method of methanol to aromatics by-product liquefied gas |
| CN107462827A (en) * | 2017-08-31 | 2017-12-12 | 北京智芯微电子科技有限公司 | Power supply burr detection circuit with internal voltage regulator |
| CN107462827B (en) * | 2017-08-31 | 2019-07-23 | 北京智芯微电子科技有限公司 | Power supply burr detection circuit with internal voltage regulator |
| CN108169694B (en) * | 2017-12-19 | 2020-01-21 | 成都三零嘉微电子有限公司 | Burr detection circuit with temperature and process compensation functions |
| CN108169694A (en) * | 2017-12-19 | 2018-06-15 | 成都三零嘉微电子有限公司 | It is a kind of that there is temperature, the burr detection circuit of process compensation function |
| WO2020257958A1 (en) * | 2019-06-24 | 2020-12-30 | 深圳市汇顶科技股份有限公司 | Glitch signal detection circuit, security chip, and electronic device |
| EP3783372A4 (en) * | 2019-06-24 | 2021-05-19 | Shenzhen Goodix Technology Co., Ltd. | Glitch signal detection circuit, security chip, and electronic device |
| US11609277B2 (en) | 2019-06-24 | 2023-03-21 | Shenzhen GOODIX Technology Co., Ltd. | Power glitch signal detection circuit and security chip |
| US11763037B2 (en) | 2019-06-24 | 2023-09-19 | Shenzhen GOODIX Technology Co., Ltd. | Power glitch signal detection circuit, security chip and electronic apparatus |
| CN110208722A (en) * | 2019-07-15 | 2019-09-06 | 珠海格力电器股份有限公司 | Detect the device and method thereof of DC power supply stability |
| WO2021026914A1 (en) * | 2019-08-15 | 2021-02-18 | 深圳市汇顶科技股份有限公司 | Power glitch signal detection circuit, secure chip and electronic device |
| CN112673263A (en) * | 2019-08-15 | 2021-04-16 | 深圳市汇顶科技股份有限公司 | Burr signal detection circuit, safety chip and electronic equipment |
| EP3805767A4 (en) * | 2019-08-15 | 2021-05-26 | Shenzhen Goodix Technology Co., Ltd. | Power glitch signal detection circuit, secure chip and electronic device |
| US11187731B2 (en) | 2019-08-15 | 2021-11-30 | Shenzhen GOODIX Technology Co., Ltd. | Power glitch signal detection circuit, security chip and electronic apparatus |
| CN113056063A (en) * | 2021-03-31 | 2021-06-29 | 黄山市瑞兴汽车电子有限公司 | High-precision and high-reliability LED car lamp driving circuit |
| CN113056063B (en) * | 2021-03-31 | 2024-02-23 | 黄山市瑞兴汽车电子有限公司 | High-precision high-reliability LED car lamp driving circuit |
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Address after: 102209 Beijing, Beiqijia, the future of science and technology in the south area of China electronic network security and information technology industry base C building, Applicant after: Beijing CEC Huada Electronic Design Co., Ltd. Address before: 100102 Beijing City, Chaoyang District Lize two Road No. 2, Wangjing science and Technology Park A block five layer Applicant before: Beijing CEC Huada Electronic Design Co., Ltd. |
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Application publication date: 20150617 |