CN105706315B - 包括光学泵浦扩展腔激光器的激光设备 - Google Patents

包括光学泵浦扩展腔激光器的激光设备 Download PDF

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Publication number
CN105706315B
CN105706315B CN201480059960.3A CN201480059960A CN105706315B CN 105706315 B CN105706315 B CN 105706315B CN 201480059960 A CN201480059960 A CN 201480059960A CN 105706315 B CN105706315 B CN 105706315B
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pump
laser
mirror
laser device
extended cavity
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CN105706315A (zh
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S.格龙恩博恩
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H01S3/08068—Holes; Stepped surface; Special cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
CN201480059960.3A 2013-10-30 2014-10-21 包括光学泵浦扩展腔激光器的激光设备 Active CN105706315B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13190807 2013-10-30
EP13190807.1 2013-10-30
PCT/EP2014/072476 WO2015062899A1 (en) 2013-10-30 2014-10-21 Laser device comprising optically pumped extended cavity laser

Publications (2)

Publication Number Publication Date
CN105706315A CN105706315A (zh) 2016-06-22
CN105706315B true CN105706315B (zh) 2019-08-06

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Country Status (6)

Country Link
US (1) US9929537B2 (enExample)
EP (1) EP3063844B1 (enExample)
JP (1) JP6357230B2 (enExample)
CN (1) CN105706315B (enExample)
RU (1) RU2674061C2 (enExample)
WO (1) WO2015062899A1 (enExample)

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WO2017060793A1 (en) * 2015-10-06 2017-04-13 Csir A laser apparatus having an excitation source which comprises an array of controllable light emitters, and an associated method
JP7443248B2 (ja) 2018-05-11 2024-03-05 エクセリタス テクノロジーズ コーポレイション 幾何学的分離を採用する光ポンピングチューナブルｖｃｓｅｌ
US11402617B2 (en) 2018-07-12 2022-08-02 Clark Wagner System and method for generating white light for projectors
US11178392B2 (en) * 2018-09-12 2021-11-16 Apple Inc. Integrated optical emitters and applications thereof
WO2020172118A1 (en) * 2019-02-19 2020-08-27 Arizona Board Of Regents On Behalf Of The University Of Arizona Efficient generation of spatially-restructurable high-order hg-modes in a laser cavity
US11081861B2 (en) * 2019-04-10 2021-08-03 Mieng Pai Increase VCSEL power using multiple gain layers
CN120033529B (zh) * 2025-04-24 2025-07-15 中国科学院长春光学精密机械与物理研究所 一种光子晶体半导体激光器

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US5627853A (en) * 1994-03-16 1997-05-06 Coherent, Inc. Optimized laser energy conversion through automatic mode matched pumping
JP2006165292A (ja) * 2004-12-08 2006-06-22 Ricoh Co Ltd 半導体レーザ励起固体レーザ装置
CN101710671A (zh) * 2009-12-11 2010-05-19 长春理工大学 一种含双反射带半导体分布布拉格反射镜的光泵浦垂直外腔面发射激光器

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DE3618607A1 (de) 1986-06-05 1987-12-10 Adlas Lasertech Gmbh & Co Kg Laser
US5745153A (en) 1992-12-07 1998-04-28 Eastman Kodak Company Optical means for using diode laser arrays in laser multibeam printers and recorders
CA2328637A1 (en) * 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
JP3967276B2 (ja) * 2003-03-07 2007-08-29 独立行政法人科学技術振興機構 端面励起微細ロッド型レーザー利得モジュール
JP4761426B2 (ja) * 2003-07-25 2011-08-31 三菱電機株式会社 光デバイスおよび半導体レーザ発振器
KR100718128B1 (ko) * 2005-06-02 2007-05-14 삼성전자주식회사 단일한 히트싱크 위에 펌프 레이저와 함께 결합된 면발광레이저
US7535938B2 (en) * 2005-08-15 2009-05-19 Pavilion Integration Corporation Low-noise monolithic microchip lasers capable of producing wavelengths ranging from IR to UV based on efficient and cost-effective frequency conversion
FR2896921B1 (fr) * 2006-01-31 2010-06-04 Centre Nat Rech Scient Dispositif de pompage longitudinal d'un milieu laser
EP2467910B1 (en) * 2009-08-20 2019-02-06 Koninklijke Philips N.V. A vertical cavity surface emitting laser device with angular-selective feedback
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JP2006165292A (ja) * 2004-12-08 2006-06-22 Ricoh Co Ltd 半導体レーザ励起固体レーザ装置
CN101710671A (zh) * 2009-12-11 2010-05-19 长春理工大学 一种含双反射带半导体分布布拉格反射镜的光泵浦垂直外腔面发射激光器

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Publication number Publication date
RU2674061C2 (ru) 2018-12-04
EP3063844B1 (en) 2021-02-24
JP6357230B2 (ja) 2018-07-11
US9929537B2 (en) 2018-03-27
WO2015062899A1 (en) 2015-05-07
EP3063844A1 (en) 2016-09-07
JP2016535935A (ja) 2016-11-17
RU2016120758A (ru) 2017-12-05
US20160241000A1 (en) 2016-08-18
CN105706315A (zh) 2016-06-22

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