CN105688939A - 基于能带调制的双重量子点敏化氧化物复合光催化材料 - Google Patents
基于能带调制的双重量子点敏化氧化物复合光催化材料 Download PDFInfo
- Publication number
- CN105688939A CN105688939A CN201610108827.3A CN201610108827A CN105688939A CN 105688939 A CN105688939 A CN 105688939A CN 201610108827 A CN201610108827 A CN 201610108827A CN 105688939 A CN105688939 A CN 105688939A
- Authority
- CN
- China
- Prior art keywords
- graphene
- quantum dot
- quantum
- oxide
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 40
- 239000002096 quantum dot Substances 0.000 title claims abstract description 38
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 230000001699 photocatalysis Effects 0.000 title claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims abstract description 8
- 238000007146 photocatalysis Methods 0.000 claims abstract description 7
- 230000004044 response Effects 0.000 claims abstract description 7
- 230000003595 spectral effect Effects 0.000 claims abstract description 7
- 206010070834 Sensitisation Diseases 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 230000008313 sensitization Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 13
- 230000009977 dual effect Effects 0.000 claims description 12
- 238000006555 catalytic reaction Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011941 photocatalyst Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 23
- 239000011787 zinc oxide Substances 0.000 abstract description 11
- 230000008901 benefit Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 229910001868 water Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
- B01J27/043—Sulfides with iron group metals or platinum group metals
- B01J27/045—Platinum group metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Catalysts (AREA)
Abstract
本发明涉及一种基于能带调制的双重量子点敏化石墨烯/氧化物复合结构光催化材料的制备方法，属于半导体材料光催化领域。本发明在能带调制原理下，利用石墨烯与氧化物形成复合结构，通过能级位置的差别实现复合结构中光生载流子的有效分离，采用窄带隙半导体量子点对氧化锌进行敏化，采用金属量子点对石墨烯进行敏化，在进一步增加光生载流子的分离和传递的同时，还可以拓宽光谱响应范围。本发明的优势是在宽的光谱响应范围下，利用双重量子点敏化既可以实现载流子的分离，又能够促进光生电子和空穴的快速传递，减少复合几率。
Description
技术领域
本发明涉及一种基于能带调制的双重量子点敏化石墨烯/氧化物复合结构光催化材料的制备方法，属于半导体材料光催化领域。
背景技术
随着环境污染的不断加剧，对污染物的处理一直是各国科研人员的研究热点。半导体光催化材料是降解有机污染物的有效途径之一。目前，实现光生载流子有效分离和传递，减少复合几率；拓宽光谱响应范围，增加太阳光利用效率；增加比表面积，提高与被降解物的有效接触程度是高效率光催化材料研究中的主要内容。常用的方式是对半导体材料进行掺杂、表面修饰或构建半导体复合结构。通过将不同的半导体纳米材料，或者半导体纳米材料与金属量子点、半导体量子点组合在一起，形成新的双组分或者多组分异质结构复合材料，从而提高光催化性能。
目前常用的半导体光催化材料有二氧化钛(TiO2)，氧化锌(ZnO)等。氧化锌为直接带隙材料，具有高吸收系数和高量子效率等优点。石墨烯为零带隙材料，载流子迁移率高。因此，石墨烯与氧化锌形成的复合结构可将氧化锌中光生电子快速分离到石墨烯一侧，提高了光生载流子的分离和传递效率。同时利用窄带隙半导体量子点(CdSe、CdS等)和金属量子点(Pt、Au、Ag等)对石墨烯/氧化锌复合结构进行敏化，能够提高光谱响应范围，且进一步提高光生载流子的转移效率。
本发明从能带调制实现载流子有效分离的角度出发，选择石墨烯与氧化物形成复合结构，采用窄带隙半导体量子点对氧化物进行敏化，采用金属量子点对石墨烯进行敏化，本发明的优势是在宽的光谱响应范围下，利用双重量子点敏化既可以实现载流子的分离，又能够促进光生电子和空穴的快速传递，减少复合几率。
发明内容
本发明从能带调制实现载流子有效分离的角度出发，提出一种基于能带调制的双重量子点敏化石墨烯/氧化物复合结构光催化材料的制备方法。首先利用溅射或沉积等方法在衬底材料上生长金属量子点材料(Pt、Au、Ag等)；其次利用化学气相沉积(CVD)制备石墨烯并迁移至已沉积金属量子点的衬底材料表面；在此基础上采用原子层沉积(ALD)进一步生长氧化物薄膜；最后采用化学浴(CBD)方法在金属量子点敏化的石墨烯/氧化物复合结构上生长窄带隙半导体量子点(CdSe、CdS等)材料，得到双重量子点敏化的石墨烯/氧化物复合光催化材料。
本发明的技术效果在于利用窄带隙半导体量子点和金属量子点对石墨烯/氧化物进行双重量子点敏化处理，能够在宽的光谱响应范围下，即紫外-可见光范围内，实现载流子的高效分离，促进光生电子和空穴的快速传递，减少复合几率，最终提高半导体材料的光催化性能。
具体实施方式
实施例一：
步骤一：利用等离子体溅射仪在玻璃衬底表面生长Pt量子点材料，电流为15mA，溅射时间为10秒，延长溅射时间将影响Pt量子点的尺寸及密度；
步骤二：利用CVD在常压下用Ni膜作为催化剂生长石墨烯，生长温度为930℃。利用无胶迁移将所生长的石墨烯迁移至沉积Pt量子点的玻璃衬底表面，其中迁移用腐蚀液为FeCl3；
步骤三：利用ALD生长ZnO薄膜，Zn源采用Zn(C2H5)2，无需加热，用水(H2O)做氧（O）源，氮气(N2)作为载气，沉积温度120℃，脉冲间隔时间为0.02秒，沉积周期为500周期；
步骤四：利用CBD方法生长CdS量子点，将Pt量子点/石墨烯/氧化锌交替浸泡在0.2mol/L的Na2S和0.2mol/L的Cd(NO3)2溶液中5分钟，期间用去离子水反复冲洗，重复3周期即可。最后在60℃下放置2小时干燥，得到Pt/石墨烯/氧化锌/CdS的双重量子点敏化复合光催化材料。
实施例二：
步骤一：利用等离子体溅射仪在玻璃衬底表面生长Ag量子点材料，电流为15mA，溅射时间为10秒，延长溅射时间将影响Ag量子点的尺寸及密度；
步骤二：利用CVD在常压下用Ni膜作为催化剂生长石墨烯，生长温度为930℃。利用无胶迁移将所生长的石墨烯迁移至沉积Ag量子点的玻璃衬底表面，其中迁移用腐蚀液为FeCl3；
步骤三：利用ALD生长ZnO薄膜，Zn源采用Zn(C2H5)2，无需加热，用水(H2O)做氧（O）源，氮气(N2)作为载气，沉积温度150℃，脉冲间隔时间为0.02秒，沉积周期为500周期；
步骤四：利用CBD方法生长CdSe量子点，将Ag量子点/石墨烯/氧化锌交替浸泡在0.2mol/L的H2Se和0.2mol/L的Cd(NO3)2溶液中5分钟，期间用去离子水反复冲洗，重复3周期即可。最后在60℃下放置2小时干燥；得到Ag/石墨烯/氧化锌/CdSe的双重量子点敏化复合光催化材料。
实施例三：
步骤一：利用等离子体溅射仪在玻璃衬底表面生长Au量子点材料，电流为15mA，溅射时间为10秒，延长溅射时间将影响Au量子点的尺寸及密度；
步骤二：利用CVD在常压下用Ni膜作为催化剂生长石墨烯，生长温度为930℃。利用无胶迁移将所生长的石墨烯迁移至沉积Au量子点的玻璃衬底表面，其中迁移用腐蚀液为FeCl3；
步骤三：利用ALD生长TiO2薄膜，Ti反应源采用C8H24N4Ti，无需加热，用水(H2O)做氧（O）源，氮气(N2)作为载气，沉积温度200℃，脉冲间隔时间为0.02秒，沉积周期为500周期；
步骤四：利用CBD方法生长CdS量子点，将Au量子点/石墨烯/二氧化钛交替浸泡在0.2mol/L的Na2S和0.2mol/L的Cd(NO3)2溶液中5分钟，期间用去离子水反复冲洗，重复3周期即可。最后在60℃下放置2小时干燥；得到Au/石墨烯/二氧化钛/CdS的双重量子点敏化复合光催化材料。
Claims (6)
1.本发明涉及一种基于能带调制的双重量子点敏化石墨烯/氧化物复合结构光催化材料的制备方法，其特征在于，首先利用溅射或沉积等方法在衬底材料上生长金属量子点材料（Pt、Au、Ag等）；其次利用化学气相沉积（CVD）制备石墨烯并迁移至已沉积金属量子点的衬底材料表面；在此基础上采用原子层沉积（ALD）进一步生长氧化物薄膜；最后采用化学浴（CBD）方法在金属量子点敏化的石墨烯/氧化物复合结构上生长窄带隙半导体量子点（CdSe、CdS等）材料，得到双重量子点敏化的石墨烯/氧化物复合光催化材料。
2.根据权利要求1所述的光催化材料的制备方法，其特征在于，利用窄带隙半导体量子点和金属量子点对石墨烯/氧化物进行双重量子点敏化处理，能够在宽的光谱响应范围下，即紫外-可见光范围内，实现载流子的高效分离，促进光生电子和空穴的快速传递，减少复合几率，提高半导体材料的光催化性能。
3.根据权利要求1所述的光催化材料的制备方法，其特征在于，金属量子点材料可以为Pt、Au或Ag等材料。
4.根据权利要求1所述的光催化材料的制备方法，其特征在于，氧化物材料可以为ZnO或TiO2等宽带隙半导体材料。
5.根据权利要求1所述的光催化材料的制备方法，其特征在于，窄带隙半导体量子点可以为CdSe或CdS等半导体材料。
6.根据权利要求1所述的光催化材料的制备方法，其特征在于，衬底材料可以为玻璃、石英等硬质透明衬底，或纤维、金属网等多孔结构。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610108827.3A CN105688939B (zh) | 2016-02-29 | 2016-02-29 | 基于能带调制的双重量子点敏化氧化物复合光催化材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610108827.3A CN105688939B (zh) | 2016-02-29 | 2016-02-29 | 基于能带调制的双重量子点敏化氧化物复合光催化材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105688939A true CN105688939A (zh) | 2016-06-22 |
| CN105688939B CN105688939B (zh) | 2019-06-28 |
Family
ID=56222440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610108827.3A Active CN105688939B (zh) | 2016-02-29 | 2016-02-29 | 基于能带调制的双重量子点敏化氧化物复合光催化材料 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105688939B (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952984A (zh) * | 2017-03-22 | 2017-07-14 | 合肥仁德电子科技有限公司 | 一种提高光敏电阻的光催化性能的方法 |
| CN107497427A (zh) * | 2017-09-08 | 2017-12-22 | 上海戈马环保科技有限公司 | 一种可降解甲醛的银/石墨烯/氧化锌复合材料制备方法 |
| CN113244936A (zh) * | 2021-03-25 | 2021-08-13 | 有研工程技术研究院有限公司 | 一种内建电场增强的卤氧铋核壳复合结构光催化材料及制备方法 |
| CN115430411A (zh) * | 2021-06-02 | 2022-12-06 | 长春理工大学 | 一种处理voc的铝-二氧化钛复合光催化材料及制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140213427A1 (en) * | 2013-01-31 | 2014-07-31 | Sunpower Technologies Llc | Photocatalyst for the Reduction of Carbon Dioxide |
| CN104164693A (zh) * | 2014-06-26 | 2014-11-26 | 中国科学院海洋研究所 | 一种石墨烯敏化CdSe/TiO2纳米管复合膜的制备方法 |
| CN105214635A (zh) * | 2015-10-26 | 2016-01-06 | 上海理工大学 | 一种复合光催化剂及其制备方法和应用 |
-
2016
- 2016-02-29 CN CN201610108827.3A patent/CN105688939B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140213427A1 (en) * | 2013-01-31 | 2014-07-31 | Sunpower Technologies Llc | Photocatalyst for the Reduction of Carbon Dioxide |
| CN104164693A (zh) * | 2014-06-26 | 2014-11-26 | 中国科学院海洋研究所 | 一种石墨烯敏化CdSe/TiO2纳米管复合膜的制备方法 |
| CN105214635A (zh) * | 2015-10-26 | 2016-01-06 | 上海理工大学 | 一种复合光催化剂及其制备方法和应用 |
Non-Patent Citations (2)
| Title |
|---|
| JINHUA LI 等: "Graphene film-functionalized germanium as a chemically stable, electrically conductive, and biologically active substrate", 《JOURNAL OF MATERIALS CHEMISTRY B 》 * |
| WEIJIA HAN 等: "Synthesis of CdS/ZnO/graphene composite with high-efficiencyphotoelectrochemical activities under solar radiation", 《APPLIED SURFACE SCIENCE》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952984A (zh) * | 2017-03-22 | 2017-07-14 | 合肥仁德电子科技有限公司 | 一种提高光敏电阻的光催化性能的方法 |
| CN106952984B (zh) * | 2017-03-22 | 2018-08-03 | 合肥仁德电子科技有限公司 | 一种提高光敏电阻的光催化性能的方法 |
| CN107497427A (zh) * | 2017-09-08 | 2017-12-22 | 上海戈马环保科技有限公司 | 一种可降解甲醛的银/石墨烯/氧化锌复合材料制备方法 |
| CN113244936A (zh) * | 2021-03-25 | 2021-08-13 | 有研工程技术研究院有限公司 | 一种内建电场增强的卤氧铋核壳复合结构光催化材料及制备方法 |
| CN115430411A (zh) * | 2021-06-02 | 2022-12-06 | 长春理工大学 | 一种处理voc的铝-二氧化钛复合光催化材料及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105688939B (zh) | 2019-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Qiu et al. | Current progress in developing metal oxide nanoarrays-based photoanodes for photoelectrochemical water splitting | |
| Sheng et al. | Rational design of photoelectrodes with rapid charge transport for photoelectrochemical applications | |
| de Melo et al. | Semi-transparent p-Cu2O/n-ZnO nanoscale-film heterojunctions for photodetection and photovoltaic applications | |
| Tang et al. | CdS/Cu2S co-sensitized TiO2 branched nanorod arrays of enhanced photoelectrochemical properties by forming nanoscale heterostructure | |
| Li et al. | A three-dimensional hexagonal fluorine-doped tin oxide nanocone array: a superior light harvesting electrode for high performance photoelectrochemical water splitting | |
| Li et al. | Photoelectrochemical cells for solar hydrogen production: current state of promising photoelectrodes, methods to improve their properties, and outlook | |
| Yoon et al. | Electrostatic spray deposition of transparent tungsten oxide thin-film photoanodes for solar water splitting | |
| Baek et al. | Preparation of hybrid silicon wire and planar solar cells having ZnO antireflection coating by all-solution processes | |
| Ding et al. | Properties, preparation, and application of tungsten disulfide: A review | |
| CN105688939A (zh) | 基于能带调制的双重量子点敏化氧化物复合光催化材料 | |
| Todorov et al. | CuInS2 films for photovoltaic applications deposited by a low-cost method | |
| KR101574658B1 (ko) | 페로브스카이트 기반의 3차원 태양전지 및 이의 제조 방법 | |
| Hassan et al. | Photoelectrochemical water splitting using post-transition metal oxides for hydrogen production: a review | |
| Syed Zahirullah et al. | Structural and optical properties of Cu-doped ZnO nanorods by silar method | |
| Park et al. | A methodological review on material growth and synthesis of solar-driven water splitting photoelectrochemical cells | |
| CN104538288A (zh) | 一种直接生长原子尺度二维半导体异质结的装置及方法 | |
| Yang et al. | Photoelectrochemical properties of vertically aligned CuInS2 nanorod arrays prepared via template-assisted growth and transfer | |
| Nguyen et al. | TiO 2 nanotubes with laterally spaced ordering enable optimized hierarchical structures with significantly enhanced photocatalytic H 2 generation | |
| Hou et al. | Insights on advanced substrates for controllable fabrication of photoanodes toward efficient and stable photoelectrochemical water splitting | |
| Lee et al. | Partial conversion reaction of ZnO nanowires to ZnSe by a simple selenization method and their photocatalytic activities | |
| Ganesh et al. | Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting | |
| Khan et al. | Chemically vaporized cobalt incorporated wurtzite as photoanodes for efficient photoelectrochemical water splitting | |
| Ho et al. | Epitaxial, Energetic, and Morphological Synergy on Photocharge Collection of the Fe2TiO5/ZnO Nanodendrite Heterojunction Array Photoelectrode for Photoelectrochemical Water Oxidation | |
| Chen et al. | Three-dimensional radial junction solar cell based on ordered silicon nanowires | |
| Slimani et al. | Growth of ZnO nanorods on FTO glass substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |