CN105679856A - 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用 - Google Patents

低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用 Download PDF

Info

Publication number
CN105679856A
CN105679856A CN201610175611.9A CN201610175611A CN105679856A CN 105679856 A CN105679856 A CN 105679856A CN 201610175611 A CN201610175611 A CN 201610175611A CN 105679856 A CN105679856 A CN 105679856A
Authority
CN
China
Prior art keywords
preparation
window layer
solution
zno
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610175611.9A
Other languages
English (en)
Inventor
王林军
徐文强
徐闰
吴杨琳
徐海涛
葛升
王文贞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Original Assignee
University of Shanghai for Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN201610175611.9A priority Critical patent/CN105679856A/zh
Publication of CN105679856A publication Critical patent/CN105679856A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明涉及的是一种使用低温溶液法制备出掺杂Mg的ZnO的薄膜窗口层的方法,属于太阳能电池薄膜制备工艺技术领域。在其中使用低温溶液法制备掺Mg的ZnO薄膜窗口层的方法是:通过制备MgO和ZnO混合物纳米颗粒,并将其溶于正丁醇制得的旋涂液,通过旋涂和热成膜处理制得掺杂Mg的ZnO窗口层薄膜。优化制备条件后制得的薄膜窗口层可直接应用到钙钛矿太阳能电池中,并且器件显示出具有一定的光电转换效率。

Description

低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用
技术领域
本发明涉及一种低温溶液法制备掺Mg的ZnO的薄膜窗口层的制备方法,并且涉及在钙钛矿太阳能电池中的应用,属于太阳能电池薄膜制备工艺技术领域。
背景技术
当今世界,随着地球资源的日益减少和人类对能源需求的不断增加,能源危机已经迫在眉睫。为了生存和发展,人类必须寻求可以替代常规能源的可再生的洁净新能源,其中的选择之一是太阳能发电。太阳能具有储存巨大,永不枯竭,清洁无污染、不受地域限制等优点,是人类最重要的新能源。
最近,一种以CH3NH3PbI3为代表的有机无机杂化钙钛矿材料薄膜太阳能电池获得了学术界的广泛关注。这类有机无机杂化钙钛矿材料所含元素均为地壳中富有元素,可大规模生产,且价格低廉。自2012年开始,以CH3NH3PbI3为主体吸收层太阳能电池的研究中,它的转换效率在短短一年内迅速飙升,突破了15%。截至到2014年6月,经验证的最高效率可达17.9%。这使得该材料极有可能成为下一代的主流薄膜太阳能电池材料,从而也吸引了国内外的大批研究人员的关注。该种太阳能电池基本采用了TiO2(二氧化钛)和ZnO作为其载流子传输层,与钙钛矿和底层的导电层相连接。但是由于上述两种薄膜窗口层制备过程繁琐,并且属于高耗能的制备过程,于此同时,上述两种材料在钙钛矿太阳能电池中的使用时会出现载流子在接触面更多复合、无法快速的传递导出载流子和薄膜的缺陷较多。基于此,本发明体术采用一种使用低温溶液法制备出掺Mg的ZnO窗口层薄膜。这种制备方法主要是通过水解的方法制取高纯度的MgO和ZnO混合纳米粉末,并将其溶于正丁醇溶液中制备选涂液,通过旋涂工艺和热处理工艺制得稳定缺陷少的掺Mg的ZnO窗口层薄膜,并可将其应用到钙钛矿太阳能电池中,得到低成本,制备过程简单的太阳能电池,该方法过程简单高效。
发明内容
本发明的目的是提供一种用低温溶液法制备掺Mg的ZnO窗口层薄膜,它可以为制备高转换效率、稳定的有机无机杂化钙钛矿薄膜太阳能电池提供一种新的工艺。
本发明是一种低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法。其特征在于具有如下的过程和步骤:
a、透明导电玻璃如FTO(掺F的SnO2)衬底预处理;该步骤中透明导电玻璃FTO(掺F的SnO2)作为沉积衬底,先采用曲拉通清洗表面,然后用去离子水将表面残余的曲拉通冲洗掉,之后采用丙酮超声清洗15分钟,然后用去离子水冲洗表面,之后再用乙醇超声清洗15分钟,再用去离子水冲洗表面,随后将其烘干,最后采用紫外臭氧或微波等离子体处理表面;
b、通过溶液水解法制备掺杂混合Mg的ZnO的纳米颗粒。该步骤中制备制备掺杂混合Mg的ZnO的纳米颗粒过程中,使用溶液法析出纳米颗粒,采取将Zn(COOH)2·2H2O(二水合醋酸锌)和Mg(COOH)2·2H2O(二水合醋酸镁)粉末溶于甲醇溶液中,形成混合液;其中Zn2+与Mg2+的摩尔比是1:0.04;然后将KOH(氢氧化钾)粉末溶于适量的甲醇中,制备一定浓度(质量分数浓度50%)的KOH溶液,使其混合均匀后,待用;将KOH溶液逐滴滴入到在65℃水浴保温的前述混合液中,会看到有白色的絮状析出;待滴定完毕后,将混合溶液置于65℃的水浴下搅拌2.5h;随后将其置于常温下,待其冷却后,通过离心机离心处理,将上层清液除去,留下析出的固体;最后将得到的白色固体置于60℃,过夜干燥得到白色粉末;
c、将制得的掺杂混合Mg的ZnO纳米颗粒溶于相关溶剂,制得旋涂液待用;该步骤中是将制得的掺杂MgO(氧化镁)和ZnO的混合粉末取适量,将其溶于无水正丁醇溶液中(0.25mol/L),在将其通过磁力搅拌使其混合均匀之后待用;
d、通过旋涂和热处理成膜制得窗口层薄膜;该步骤中是将制得掺杂Mg的ZnO旋涂液作涂覆使用;将步骤a中得到的衬底置于旋涂机中,设置参数3000转/分钟,取适量的选涂液滴到衬底上,使用旋涂机旋涂;待旋涂结束后,将涂覆了薄膜的衬底置于加热板上,并设置温度150℃,烘烤5分钟,最终得到掺Mg的ZnO薄膜窗口层。
本发明是一种低温溶液法制备掺Mg的ZnO薄膜窗口层的使用及其应用方法;
将已制备得到的钙钛矿溶液旋涂到窗口层,热处理成膜;再涂上相关的空穴传输层材料,最后镀上电极;制成钙钛矿太阳能电池器件。
附图说明
图1为本发明低温溶液法制备的ZnO窗口层薄膜X射线衍射图。
图2为本发明低温溶液法制备的掺Mg的ZnO窗口层薄膜X射线衍射图。
具体实施方式
为进一步说明本发明的技术内容,现通过具体实施例对本发明的制备方法进行叙述。
本实施例中的制备方法如下所述:
(1)将透明导电玻璃SnO2:F作为沉积衬底,先采用曲拉通清洗表面,然后用清水将表面残余的曲拉通冲洗掉,之后采用丙酮超声清洗15分钟,然后用去离子水冲洗表面,之后再用乙醇超声清洗15分钟,再用去离子水冲洗表面,随后将其烘干。最后采用紫外臭氧处理10分钟;
(2)采取将Zn(COOH)2·2H2O(二水合醋酸锌)和Mg(COOH)2·2H2O(二水合醋酸镁)粉末溶于甲醇溶液中,形成混合液;其中Zn2+与Mg2+的摩尔比为1:0.04;然后将KOH(氢氧化钾)粉末溶于适量的甲醇中,制备一定浓度的KOH溶液,使其混合均匀后,待用;将KOH溶液逐滴滴入到在65℃水浴保温的前述混合液中,会看到有白色的絮状析出;待滴定完毕后,将混合溶液置于65℃的水浴下搅拌2.5h;随后将其置于常温下,待其冷却后,通过离心机离心处理,将上层清液除去,留下析出的固体;最后将得到的白色固体置于60℃,过夜干燥得到白色粉末;
(3)制得的掺杂MgO(氧化镁)和ZnO的混合粉末取适量,将其溶于无水正丁醇溶液中(0.25mol/L),在将其通过磁力搅拌使其混合均匀之后待用;
(4)制得掺杂Mg的ZnO旋涂液作涂覆使用;将步骤a中得到的衬底置于旋涂机中,设置参数3000转/分钟,取适量的选涂液滴到衬底上,使用旋涂机旋涂;待旋涂结束后,将涂覆了薄膜的衬底置于加热板上,并设置温度150℃,烘烤5分钟,最终得到掺Mg的ZnO薄膜窗口层;
(5)将已经制备得到的钙钛矿旋涂液通过旋涂机平铺到窗口层上,随后通过热处理成膜形成一层钙钛矿薄膜。接着在上面涂覆一层空穴传输层材料,风干挥发溶剂后,得到最终的钙钛矿太阳能电池器件。
通过以上方法所制得掺Mg的ZnO薄膜窗口层,可直接利用到钙钛矿太阳能电池中,并可以实现解决良好的回线滞后问题。1.5AM的光照条件下,该器件显示出具有一定的光电转换效率,并且成功解决了短路光电流稳定的问题。

Claims (2)

1.一种低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法,其特征在于具有如下的过程和步骤:
a、透明导电玻璃FTO(掺F的SnO2)衬底预处理;该步骤中透明导电玻璃FTO(掺F的SnO2)作为沉积衬底,先采用曲拉通清洗表面,然后用去离子水将表面残余的曲拉通冲洗掉,之后采用丙酮超声清洗15分钟,然后用去离子水冲洗表面,之后再用乙醇超声清洗15分钟,再用去离子水冲洗表面,随后将其烘干;最后采用紫外臭氧或微波等离子体处理表面;
b、通过溶液水解法制备掺杂混合Mg的ZnO的纳米颗粒;该步骤中制备制备掺杂混合Mg的ZnO的纳米颗粒过程中,使用溶液法析出纳米颗粒,采取将Zn(COOH)2·2H2O(二水合醋酸锌)和Mg(COOH)2·2H2O(二水合醋酸镁)粉末溶于甲醇溶液中,形成混合液,其中Zn2+与Mg2+的摩尔比为1:0.04;然后将KOH(氢氧化钾)粉末溶于适量的甲醇中,制备一定浓度的KOH溶液(质量分数50%),使其混合均匀后,待用;将KOH溶液逐滴滴入到在65℃水浴保温的前述混合液中,会看到有白色的絮状析出;待滴定完毕后,将混合溶液置于65℃的水浴下搅拌2.5h;随后将其置于常温下,待其冷却后,通过离心机离心处理,将上层清液除去,留下析出的固体;最后将得到的白色固体置于60℃,过夜干燥得到白色粉末;
c、将制得的掺杂混合Mg的ZnO纳米颗粒溶于相关溶剂,制得旋涂液待用,该步骤中是将制得的掺杂MgO(氧化镁)和ZnO的混合粉末取适量,将其溶于无水正丁醇溶液中(0.25mol/L),在将其通过磁力搅拌使其混合均匀之后待用;
d、通过旋涂和热处理成膜制得窗口层薄膜;该步骤中是将制得掺杂Mg的ZnO旋涂液作涂覆使用;将步骤a中得到的衬底置于旋涂机中,设置参数3000转/分钟,取适量的旋涂液滴到衬底上,使用旋涂机旋涂;待旋涂结束后,将涂覆了薄膜的衬底置于加热板上,并设置温度150℃,烘烤5分钟,最终得到掺Mg的ZnO薄膜窗口层。
2.一种低温溶液法制备掺Mg的ZnO薄膜窗口层的使用及其应用方法;将已制备得到的钙钛矿溶液旋涂到窗口层,热处理成膜,再涂上相关的空穴传输层材料,最后镀上电极,制成钙钛矿太阳能电池器件。
CN201610175611.9A 2016-03-26 2016-03-26 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用 Pending CN105679856A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610175611.9A CN105679856A (zh) 2016-03-26 2016-03-26 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610175611.9A CN105679856A (zh) 2016-03-26 2016-03-26 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用

Publications (1)

Publication Number Publication Date
CN105679856A true CN105679856A (zh) 2016-06-15

Family

ID=56223983

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610175611.9A Pending CN105679856A (zh) 2016-03-26 2016-03-26 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用

Country Status (1)

Country Link
CN (1) CN105679856A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162181A (zh) * 2019-12-30 2020-05-15 武汉明芯储能光电科技有限公司 一种铪掺杂氧化锌的光电探测器及其制备方法
CN111453761A (zh) * 2020-05-07 2020-07-28 天津翔龙电子有限公司 一种ZnO纳米粒子薄膜的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103229306A (zh) * 2010-09-22 2013-07-31 第一太阳能有限公司 具有氧化锌镁窗口层的薄膜光伏装置
CN104362186A (zh) * 2014-10-21 2015-02-18 苏州瑞晟纳米科技有限公司 一种应用于高效薄膜光电池的双层结构窗口层

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103229306A (zh) * 2010-09-22 2013-07-31 第一太阳能有限公司 具有氧化锌镁窗口层的薄膜光伏装置
CN104362186A (zh) * 2014-10-21 2015-02-18 苏州瑞晟纳米科技有限公司 一种应用于高效薄膜光电池的双层结构窗口层

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
何莎莎: ""ZnO薄膜的低温溶液法制备及在光电器件中应用"", 《信息科技辑》 *
林建舫: ""低温水溶液法制备Zn1-xMgxO纳米棒及其性能研究"", 《工程科技Ⅰ辑》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162181A (zh) * 2019-12-30 2020-05-15 武汉明芯储能光电科技有限公司 一种铪掺杂氧化锌的光电探测器及其制备方法
CN111453761A (zh) * 2020-05-07 2020-07-28 天津翔龙电子有限公司 一种ZnO纳米粒子薄膜的制备方法

Similar Documents

Publication Publication Date Title
CN104362253B (zh) 全固态钙钛矿微晶硅复合太阳电池及其制备方法
CN101702377B (zh) 一种氧化锌/二氧化钛杂化电极及其制备方法
CN103400697B (zh) 一种全固态柔性敏化太阳能电池及其制备方法
CN108796532B (zh) 氧化镍—氧化亚铜同质结光电阴极及其制备方法和在光催化中的应用
CN106033797A (zh) 一种具有有机骨架结构的钙钛矿太阳能电池及其制备方法
CN104393103B (zh) 一种Cu2ZnSnS4半导体薄膜的制备方法及其应用
CN102723208B (zh) 一维氧化锌-二氧化钛核壳结构复合纳米线阵列的制备方法
CN100534910C (zh) TiO2纳米管阵列的制备方法
CN107919403B (zh) 一种高效硒碲化镉合金纳米晶太阳电池及其制备方法
CN105679941A (zh) 一种基于p型铜铁矿结构半导体材料的平面结构钙钛矿太阳能电池及其制备
CN108539024A (zh) 一种碳基钙钛矿太阳能电池及其制备方法
CN108281550B (zh) 基于镁掺杂二氧化钛的钙钛矿太阳能电池及其制备方法
CN106450007A (zh) 一种基于碘化亚铜/钙钛矿体异质结的太阳能电池及制备方法
CN106057930A (zh) 一种由氯化铜和氯化镓制备铜镓硒光电薄膜的方法
CN103107242A (zh) 在玻璃基板上制备钒酸铋太阳能电池的方法
CN105679856A (zh) 低温溶液法制备掺Mg的ZnO薄膜窗口层的制备方法及其应用
CN101872685B (zh) 固态染料敏化纳米晶微晶硅复合薄膜太阳电池及其制备方法
CN109638164A (zh) 一种水处理SnO2薄膜及其钙钛矿太阳能电池的制备方法
CN102354606A (zh) 一种染料敏化太阳能电池光阳极的制备方法
CN104022189A (zh) 一种制备ZnO/ZnS复合光电薄膜的方法
CN105489381B (zh) 染料敏化太阳能电池光散射层及其制备方法
CN110176542A (zh) 钙钛矿电池用有机-无机复合空穴传输薄膜及其制备方法
CN105280389A (zh) 染料敏化太阳能电池的制备方法
CN111326603A (zh) 一种以氧化锌做电子传输层的无机钙钛矿电池制备方法
CN108987582A (zh) 一种钙钛矿太阳能电池及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160615