CN105679659A - PTSL technique and manufacturing method of fin-type field effect transistor - Google Patents
PTSL technique and manufacturing method of fin-type field effect transistor Download PDFInfo
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- CN105679659A CN105679659A CN201410671043.2A CN201410671043A CN105679659A CN 105679659 A CN105679659 A CN 105679659A CN 201410671043 A CN201410671043 A CN 201410671043A CN 105679659 A CN105679659 A CN 105679659A
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Abstract
The invention discloses a PTSL technique, which comprises the steps as follows: a substrate is provided; isolated fins are formed in the substrate; first ion implantation is carried out; the first ion implantation is PTSL implantation; second ion implantation is carried out; and the dose and the energy of the second ion implantation are smaller than those of the first ion implantation. According to the method disclosed by the invention, uneven doping in a channel caused by PTSL implantation is optimized; and the doping shape and form of the channel become even, so that the performance of a device is improved.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly relate to the manufacture method of a kind of PTSL process and fin formula field effect transistor.
Background technology
Highly integrated along with semiconductor device, the short-channel effect of the MOSFET element of plane is more notable, is degrading the performance of device.
At present, for the problem solving short-channel effect, propose the three-dimensional device architecture of fin formula field effect transistor (Fin-FET), Fin-FET is the transistor with fin channel structure, it utilizes several surfaces of thin fin as raceway groove, such that it is able to prevent the short-channel effect in conventional transistor, operating current can be increased simultaneously.
In the Fin-FET device fabrication of body silicon substrate, fin (Fin) is formed by etching body silicon substrate, after forming isolation between fin, need to carry out ion implanting, thus, break-through stop-layer (PTSL formed below at channel region, PunchThoughStopLayer), to prevent the break-through of raceway groove, this PTSL is doped to and the doping of source and drain doping opposite types, the non-angular ion implanting of generally vertical fin upper surface, fin is formed while PTSL, the doping of uneven concentration can be internally formed at raceway groove, this makes the pattern of the knot between channel region and source-drain area occur, the duty of device is produced impact, cause the deterioration of device performance.
Summary of the invention
It is an object of the invention to overcome deficiency of the prior art, it is provided that the manufacture method of a kind of PTSL process and fin formula field effect transistor, improve the pattern of channel dopant concentration.
For achieving the above object, the technical scheme is that
A kind of PTSL process, including step:
Substrate is provided, substrate is formed mutually isolated fin;
Carrying out first time ion implanting, first time ion implanting is that PTSL injects;
Carry out second time ion implanting, the second time dosage of ion implanting and energy less than the dosage of first time ion implanting and energy.
Optionally, the angle of second time ion implanting is not less than the angle of the first ion implanting.
Optionally, the first time angular range of ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 10 to 150KEV.
Optionally, the angular range of second time ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 500EV to 50KEV.
Optionally, the dosage range of first time ion implanting is 5E12 to 5E13cm-2, energy range is 30 to 80KEV, and angular range is 0-7 °.
Optionally, the dosage range of second time ion implanting is 5E12 to 5E13cm-2, energy range is 1 to 10KEV.
Optionally, angle 0-30 ° of second time ion implanting.
Additionally, present invention also offers a kind of fin formula field effect transistor, any of the above-described method is adopted to carry out PTSL technique.
The PTSL process of the embodiment of the present invention and the manufacture method of fin formula field effect transistor, after carrying out PTSL injection, carry out second time ion implanting, dosage and the energy of second time ion implanting are little, adulterating shallower, the distribution of doping content in channels and PTSL inject doping content in channels and have carried out complementation so that the uneven doping of raceway groove concentration inside that PTSL causes after injecting obtains optimization, the doping pattern making raceway groove becomes uniform, thus improving the performance of device.
Accompanying drawing explanation
In order to be illustrated more clearly that technical scheme of the invention process, the accompanying drawing used required in embodiment will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the flow chart of the PTSL process according to the present invention;
Fig. 2-Fig. 6 manufactures the structural representation in each manufacture process of fin formula field effect transistor according to embodiments of the present invention;
Fig. 7 is the distribution schematic diagram of the different ion implanting doping content in fin;
Respectively conventional for Fig. 8 A and 8B PTSL injection technology, the distributed simulation schematic diagram of the PTSL injection technology of embodiment of the present invention doping content in fin.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization when without prejudice to intension of the present invention, and therefore the present invention is not by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; representing that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this. Additionally, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
The present invention proposes a kind of PTSL process, shown in reference Fig. 1, including: substrate is provided, substrate is formed mutually isolated fin; Carrying out first time ion implanting, the first ion implanting is that PTSL injects; Carry out second time ion implanting, the second time dosage of ion implanting and energy less than the dosage of first time ion implanting and energy.
In the present invention, after carrying out PTSL injection, carry out second time ion implanting, dosage and the energy of second time ion implanting are less, shallower in the doping of channel region, the distribution of second time ion implanting doping content in channels and PTSL inject doping content in channels and have carried out complementation so that the uneven doping of raceway groove concentration inside that PTSL causes after injecting obtains optimization, the doping pattern making raceway groove becomes uniform, thus improving the performance of device.
In order to be better understood from technical scheme and technique effect, below with reference to concrete schematic flow sheet Fig. 1, specific embodiment is described in detail.
First, in step S01, it is provided that substrate 100, substrate 100 is formed with mutually isolated fin 102, with reference to shown in Fig. 4.
In embodiments of the present invention, described Semiconductor substrate 100 can be Si substrate, Ge substrate etc. In other embodiments, it is also possible to be the substrate including other elemental semiconductors or compound semiconductor, for instance GaAs, InP or SiC etc., it is also possible to for laminated construction, for instance Si/SiGe etc. In the present embodiment, described Semiconductor substrate 100 is body silicon substrate.
In a specific embodiment, it is possible to fin 102 and isolation 110 are provided as follows.
First, the substrate 100 of body silicon forms the first hard mask 104, such as silicon nitride; Then, adopting lithographic technique, for instance the method for RIE (reactive ion etching), etched substrate 100 forms fin 102, thus the fin 102 defined on substrate 100, as shown in Figure 2.
Then, carrying out the filling of isolated material 106, isolated material can be such as silicon dioxide, as shown in Figure 3; And planarize, until exposing the upper surface of fin 102, then, wet etching can be used, for instance with the isolated material of the certain thickness silicon dioxide of Fluohydric acid. erosion removal, the isolated material of member-retaining portion is between fin 102, thus defining isolation 110, as shown in Figure 4.
Then, in step S02, carrying out first time ion implanting, first time ion implanting is that PTSL injects, with reference to shown in Fig. 5.
This first time ion implanting is traditional PTSL ion implanting, and normally, the angular range of PTSL ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 10 to 150KEV. In preferred embodiment, the angular range of PTSL ion implanting is 0-7 °, and dosage range is 5E12 to 5E13cm-2, energy range is 30 to 80KEV. Normally, PTSL ion implanting adopts and the ion of source and drain injection opposite types, for N-type device, implanting p-type impurity, for instance B etc.; For P-type device, inject N-type impurity, for instance for As or P etc.
As it is shown in figure 5, in the present embodiment, the angle of PTSL ion implanting is 0 °, and dosage is 1.5E13cm-2, energy is 60KV. After this first time ion implanting, as shown in Figure 5, channel region in fin is formed below break-through stop-layer 108, simultaneously, there is also uneven doping content at channel region, with reference to shown in Fig. 7, Fig. 7 is the distribution schematic diagram of the direction doping content along fin, it can be seen that after the PTSL injection of routine, be downward trend at channel region doping concentration distribution.
Then, in step S03, second time ion implanting, the second time dosage of ion implanting and energy are carried out less than the dosage of first time ion implanting and energy, with reference to shown in Fig. 6.
This second time ion implanting is the PTSL optimization technique injected, and in this time is injected, the energy of injection and dosage all relatively first time ion implanting has reduction, adulterates with the channel region on break-through stop-layer 108. In this second time ion implanting, the doping type identical or different with first time ion implanting can be adopted, for identical doping type, the doping content of second time ion implanting is added with the doping content of first time ion implanting, for different doping types, the doping content of second time ion implanting and the doping content of first time ion implanting are subtracted each other, so that channel region Impurity Distribution is more uniformly distributed. In certain embodiments, the angular range of second time ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 500EV to 50KEV.In a preferred embodiment, the dosage range of second time ion implanting is 5E12 to 5E13cm-2, energy range is 1 to 10KEV. More preferably, the angle of second time ion implanting is not less than the angle of the first ion implanting, in some preferred embodiments, the angle of second time ion implanting can be 0-30 °, make the Impurity Distribution trend after injecting more reasonable, after superposing with the impurity of first time ion implanting, obtain doping pattern evenly.
In a specific embodiment, the angle of ion implanting is 7 °, and dosage is 2E12cm-2, energy is 3kV. With reference to shown in Fig. 7, it can be seen that, after second time ion implanting, in fin, the doping concentration distribution of channel region is ascendant trend, forms complementation with the PTSL doping concentration distribution injected, as shown in Figure 7, after first time ion implanting and second time ion implanting, doping has carried out superposition so that after twice injection, the doping content of channel region superposition becomes uniform, the doping pattern of raceway groove is optimized, and then improves the performance of device.
After twice injection, carrying out thermal annealing, the temperature of thermal annealing can be spike annealing (Spike) or the laser annealing of 1050 DEG C.
As shown in figs. 8 a and 8b, the PTSL injection technology that Fig. 8 A and 8B is respectively conventional, the distributed simulation schematic diagram of the PTSL injection technology of embodiment of the present invention doping content in fin, this figure is the section analogous diagram along fin direction, transverse axis is the bearing of trend of fin, the longitudinal axis is the short transverse of fin, boxed area is the channel region under grid, it can be seen that, as shown in Figure 8 A, in conventional PTSL technique, the doping content of channel region is in tip distribution, pattern at the knot formed with source-drain area occurs, doping concentration distribution is uneven, Fin top is different with effective grid length of bottom, cause that the duty in whole channel region is different, thus having a strong impact on the performance of device, and after adopting the process that the secondary of the present invention injects, the pattern of the knot that channel region is formed with source-drain area compares steep, the pattern of doping content is improved, as shown in Figure 8 B, channel region is smooth with the pattern of source-drain area joint, doping content is uniform so that effective grid length of Fin upper and lower is consistent, improves the performance of device.
So far, complete the PTSL technique of the embodiment of the present invention, then, continue the processing technique of device. As formed gate dielectric layer and grid on the channel region of fin, form side wall on the sidewalls of the gate, and form source-drain area etc. by selective epitaxial at the two ends of fin, thus forming the fin formula field effect transistor of the embodiment of the present invention.
Compared to traditional PTSL technique, the fin formula field effect transistor that the PTSL technique that the secondary of the embodiment of the present invention injects is formed is adopted to have better device performance, as shown in following table one, table one is the device parameters of tradition PTSL and the PTSL injection technology of the embodiment of the present invention, tradition PTSL technique is injected for only carrying out a PTSL, the injection technology of the present invention is after traditional PTSL technique, proceed once second time ion implanting, it can be seen that, adopt the sub-threshold slope SS of the device of the PTSL technique of the embodiment of the present invention, drain induced barrier reduces the short-channel effects such as effect DIBL and improves, electric leakage IOFF improves simultaneously, each electrical parameter of device is obtained for optimization, the performance of device is all improved.
The device parameters of the PTSL injection technology of table one tradition PTSL and the embodiment of the present invention
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, all may utilize the method for the disclosure above and technology contents and technical solution of the present invention is made many possible variations and modification, or be revised as the Equivalent embodiments of equivalent variations. Therefore, every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the scope of technical solution of the present invention protection.
Claims (8)
1. a PTSL process, it is characterised in that include step:
Substrate is provided, substrate is formed mutually isolated fin;
Carrying out first time ion implanting, first time ion implanting is that PTSL injects;
Carry out second time ion implanting, the second time dosage of ion implanting and energy less than the dosage of first time ion implanting and energy.
2. process according to claim 1, it is characterised in that the angle of second time ion implanting is not less than the angle of the first ion implanting.
3. process according to claim 1, it is characterised in that the first time angular range of ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 10 to 150KEV.
4. process according to claim 1, it is characterised in that the angular range of second time ion implanting is 0-45 °, and dosage range is 1E12 to 1E14cm-2, energy range is 500EV to 50KEV.
5. process according to claim 1, it is characterised in that the first time dosage range of ion implanting is 5E12 to 5E13cm-2, energy range is 30 to 80KEV, and angular range is 0-7 °.
6. process according to claim 5, it is characterised in that the dosage range of second time ion implanting is 5E12 to 5E13cm-2, energy range is 1 to 10KEV.
7. process according to claim 6, it is characterised in that angle 0-30 ° of second time ion implanting.
8. the manufacture method of a fin formula field effect transistor, it is characterised in that include the process according to any one of claim 1-7.
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| US20040256683A1 (en) * | 2003-06-20 | 2004-12-23 | Deok-Hyung Lee | Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations and methods of fabricating same |
| US20090267155A1 (en) * | 2008-04-24 | 2009-10-29 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| US20130126972A1 (en) * | 2011-11-23 | 2013-05-23 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
| TW201413795A (en) * | 2012-08-22 | 2014-04-01 | Advanced Ion Beam Tech Inc | Doping a non-planar semiconductor device |
| CN104112667A (en) * | 2013-04-22 | 2014-10-22 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040256683A1 (en) * | 2003-06-20 | 2004-12-23 | Deok-Hyung Lee | Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations and methods of fabricating same |
| US20090267155A1 (en) * | 2008-04-24 | 2009-10-29 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| US20130126972A1 (en) * | 2011-11-23 | 2013-05-23 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
| TW201413795A (en) * | 2012-08-22 | 2014-04-01 | Advanced Ion Beam Tech Inc | Doping a non-planar semiconductor device |
| CN104112667A (en) * | 2013-04-22 | 2014-10-22 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
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Application publication date: 20160615 |