CN105674921B - A kind of measurement method in channel hole - Google Patents
A kind of measurement method in channel hole Download PDFInfo
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- CN105674921B CN105674921B CN201610055046.2A CN201610055046A CN105674921B CN 105674921 B CN105674921 B CN 105674921B CN 201610055046 A CN201610055046 A CN 201610055046A CN 105674921 B CN105674921 B CN 105674921B
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- channel hole
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- slope
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to semiconductor fields, more particularly in a kind of semiconductor structure in each film layer channel pore size measurement method, semiconductor structure is performed etching with the predetermined inclination angle α formed with substrate according to the arrangement mode in channel hole first, form the slope for measurement, test equipment is recycled to be scanned slope, obtain a flat porous figure, then the corresponding film layer in each channel hole in flat porous figure is determined, according to the flat porous figure, the size for obtaining the channel hole in each film layer, realizes the rapid survey of channel pore size in each film layer.
Description
Technical field
The present invention relates to semiconductor field more particularly to a kind of measurement methods in channel hole.
Background technique
Three-dimensional storage increases storage density using the method for multiple-level stack, and the film layer number of present main product reaches
39 layers.The size in channel hole directly influences the quality of memory cell characteristics, and 39 layers every layer of channel hole size becomes product energy
Enough reach the most critical factor of design requirement.How quickly to detect the size in each layer channel hole is that technology urgently to be solved is asked
Topic.Traditional method is the channel hole size of one layer of survey after chemical mechanical grinding, is measured again after chemical mechanical grinding again,
Such measurement method is time-consuming and laborious, and measurement efficiency is lower, at high cost.
Summary of the invention
In view of the above-mentioned problems, the invention proposes a kind of measurement method of channel pore size, the measurement method includes:
If providing one is provided with the semiconductor structure of photopolymer layer, and is formed through each film in the semiconductor structure
The channel hole of layer；
The semiconductor structure is chamfer according to the arrangement mode in the channel hole, in the semiconductor structure
Form the slope in the channel hole in each film layer of exposure；
The slope is scanned using test equipment, to obtain a flat porous figure；
According to the flat porous figure, the size in the channel hole in each film layer is obtained.
The measurement method of above-mentioned channel pore size, wherein the semiconductor structure is three-dimensional storage.
The measurement method of above-mentioned channel pore size, wherein the semiconductor structure includes semiconductor substrate and is stacked in
If the photopolymer layer on the semiconductor substrate, in the method, according to the arrangement mode in the channel hole using focus from
Beamlet is to chamfer the semiconductor structure at the inclination angle of α with the semiconductor substrate, to form each film of exposure
The slope in the channel hole in layer；
Wherein, 10 °≤α≤80 °.
The measurement method of above-mentioned channel pore size, wherein the slope is scanned using the test equipment
When, semiconductor substrate plane described in the test equipment face.
The measurement method of above-mentioned channel pore size, wherein in the method:
According to the spacing in the inclined angle alpha and the flat porous figure between adjacent holes, obtain in each film layer
The height in channel hole；
Wherein, if the spacing in the flat porous figure between each adjacent holes is L, it is formed with described the half of slope
The value of difference in height △ H in conductor structure between adjacent channel hole is L*tan α.
The measurement method of above-mentioned channel pore size, wherein in the method:
If the spacing between each adjacent film layer is d, the value of the inclined angle alpha is tan-1(d/L), so that
The value for being formed with the difference in height △ H in the semiconductor structure of slope between adjacent channel hole is d.
The measurement method of above-mentioned channel pore size, wherein the slope is scanned using the test equipment
When, slope described in the test equipment face is scanned.
The measurement method of above-mentioned channel pore size, wherein the measurement method further include:
According to the spacing L ' between the channel hole each in the inclined angle alpha and the flat porous figure, calculate each described
The height in channel hole；
Wherein, the spacing between the adjacent channel hole is equal；The value of difference in height △ H between the adjacent channel hole is
L’*sinα。
The measurement method of above-mentioned channel pore size, wherein the shape in each channel hole is ellipse in the flat porous figure
Shape, long axis a, short axle b, then the value of the true long axis a ' in the channel hole is a*cos α, and the value of true short axle b ' is b.
The measurement method of above-mentioned channel pore size, wherein the shape in each channel hole is rectangle in the flat porous figure,
A length of a, width b, then the value of the true long a ' in the channel hole is a*cos α, and the value of true width b ' is b.
The measurement method of above-mentioned channel pore size, wherein the test equipment is SEM measuring instrument.
In conclusion the invention proposes the measurement method of channel pore size in each film layer in a kind of semiconductor structure, it is first
First semiconductor structure is performed etching with the predetermined inclination angle α formed with substrate according to the arrangement mode in channel hole, is formed and is used
It in the slope of measurement, recycles test equipment to be scanned slope, obtains a flat porous figure, then determine that plane is more
The corresponding film layer in each channel hole in hole pattern obtains the size in the channel hole in each film layer according to the flat porous figure, real
Now in each film layer channel pore size rapid survey.
Detailed description of the invention
Fig. 1 is the flat porous figure of the three-dimensional storage and the generation of test equipment face substrate after beveling of the embodiment of the present invention
Schematic diagram；
Fig. 2 is the flow chart of the measurement method of channel pore size in the embodiment of the present invention.
Specific embodiment
Invention is further explained with reference to the accompanying drawing.
As depicted in figs. 1 and 2, the present embodiment proposes a kind of measurement method of channel pore size, is applied to semiconductor junction
Each film layer (attached drawing in structure (embodiment illustrates by taking three-dimensional storage 1 as an example, but should not be understood as limitation of the present invention)
In do not show and mark, the quantity of film layer with no restriction, in preferred situation be 39 layers) in 2 size of channel hole measurement, partly lead
Body structure includes semiconductor substrate (do not show and mark in attached drawing) and if being stacked in photopolymer layer on semiconductor substrate, the measurement
Method includes:
If providing one is provided with the three-dimensional storage 1 of photopolymer layer, and is formed through the ditch of each film layer in three-dimensional storage 1
Road hole 2；According to the arrangement mode in channel hole 2 use focused ion beam with 1 substrate of three-dimensional storage at the inclination angle of α to three-dimensional
Memory 1 is chamfer, with the slope 3 in the channel hole formed in each film layer of exposure；10 °≤α≤80 °, for example, α can for 10 °,
20 °, 30 °, 40 °, 50 °, 60 °, 70 °, 80 ° etc.；Three-dimensional storage is chamfer according to the arrangement mode in channel hole 2, with
The slope in the channel hole 2 in each film layer of exposure is formed in three-dimensional storage 1；It (does not show and marks in attached drawing using test equipment
Note) slope is scanned, to obtain a flat porous Fig. 4；According to flat porous Fig. 4, the channel in each film layer is obtained
The size in hole 2.
Preferably, when being scanned using SEM test equipment (being also possible to other test equipments) to slope 3, SEM is surveyed
1 substrate plane of test instrument face three-dimensional storage, the then measurement method further include:
According to the spacing in inclined angle alpha and flat porous Fig. 4 between adjacent holes, the height in the channel hole 2 in each film layer is obtained
Degree；Spacing in flat porous Fig. 4 between each adjacent holes is L, then is formed with adjacent ditch in the three-dimensional storage 1 of slope 3
The value of difference in height △ H between road hole 2 is L*tan α；Spacing between each adjacent film layer is d, then the value of inclined angle alpha is
tan-1(d/L), so that the value for being formed with the difference in height △ H in the three-dimensional storage 1 of slope 3 between adjacent channel hole 2 is
D allows professional intuitively to judge the film layer where channel hole 2 by difference in height.
Preferably, when being scanned using SEM test equipment to slope 3,3 face of SEM test equipment face slope is carried out
Scanning, the flat porous figure of formation can show greatly slope in the accompanying drawings to indicate, the measurement method further include:
According to the spacing L ' between channel hole 2 each in inclined angle alpha and flat porous figure, the height in each channel hole is calculated；Its
In, the spacing between adjacent channel hole 2 is equal；The value of difference in height △ H between adjacent channel hole 2 is L ' * sin α；When plane is more
The shape in each channel hole is ellipse in hole pattern, and long axis a, short axle b, then the value of the true long axis a ' in channel hole 2 is a*cos
The value of α, true short axle b ' are equal with b；When the shape in channel each in flat porous figure hole is rectangle, a length of a, width b, then channel
The value of the true long a ' in hole 1 is a*cos α, and the value of true width b ' is equal with b.
In conclusion the invention proposes the measurement method of channel pore size in each film layer in a kind of semiconductor structure, it is first
First semiconductor structure is performed etching with the predetermined inclination angle α formed with substrate according to the arrangement mode in channel hole, is formed and is used
It in the slope of measurement, recycles test equipment to be scanned slope, obtains a flat porous figure, then determine that plane is more
The corresponding film layer in each channel hole in hole pattern obtains the size in the channel hole in each film layer according to the flat porous figure, real
Now in each film layer channel pore size rapid survey.
By description and accompanying drawings, specific embodiment detailed description is given, for a person skilled in the art, is read
After reading above description, various changes and modifications undoubtedly be will be evident.Therefore, appended claims, which should be regarded as, covers this
The true intention of invention and whole variations and modifications of range.In Claims scope the range of any and all equivalences with
Content is all considered as still belonging to the intent and scope of the invention.
Claims (8)
1. a kind of measurement method of channel pore size, which is characterized in that the measurement method includes:
If providing one is provided with the semiconductor structure of photopolymer layer, and is formed through each film layer in the semiconductor structure
Channel hole；
The semiconductor structure is chamfer according to the arrangement mode in the channel hole, to be formed in the semiconductor structure
The slope in the channel hole in each film layer of exposure；
The slope is scanned using test equipment, to obtain a flat porous figure；
According to the flat porous figure, the size in the channel hole in each film layer is obtained；
The size includes the height in the channel hole；
If the semiconductor structure includes semiconductor substrate and the photopolymer layer that is stacked on the semiconductor substrate, described
In method, use focused ion beam with the inclination angle pair with the semiconductor substrate at α according to the arrangement mode in the channel hole
The semiconductor structure is chamfer, with the slope in the channel hole formed in each film layer of exposure；
Wherein, 10 °≤α≤80 °；
When being scanned using the test equipment to the slope, semiconductor substrate described in the test equipment face is flat
Face；
According to the spacing in the inclined angle alpha and the flat porous figure between adjacent holes, the channel in each film layer is obtained
The height in hole；
Wherein, if the spacing in the flat porous figure between each adjacent holes is L, it is formed with the semiconductor of slope
The value of difference in height △ H in structure between adjacent channel hole is L*tan α.
2. the measurement method of channel pore size according to claim 1, which is characterized in that the semiconductor structure is three-dimensional
Memory.
3. the measurement method of channel pore size according to claim 1, which is characterized in that in the method:
If the spacing between each adjacent film layer is d, the value of the inclined angle alpha is tan-1(d/L), so that being formed
The value for having the difference in height △ H in the semiconductor structure of slope between adjacent channel hole is d.
4. the measurement method of channel pore size according to any one of claims 1 to 3, which is characterized in that the survey
Test instrument is SEM measuring instrument.
5. a kind of measurement method of channel pore size, which is characterized in that the measurement method includes:
If providing one is provided with the semiconductor structure of photopolymer layer, and is formed through each film layer in the semiconductor structure
Channel hole；
The semiconductor structure is chamfer according to the arrangement mode in the channel hole, to be formed in the semiconductor structure
The slope in the channel hole in each film layer of exposure；
The slope is scanned using test equipment, to obtain a flat porous figure；
According to the flat porous figure, the size in the channel hole in each film layer is obtained；
The size includes the height in the channel hole；
If the semiconductor structure includes semiconductor substrate and the photopolymer layer that is stacked on the semiconductor substrate, described
In method, use focused ion beam with the inclination angle pair with the semiconductor substrate at α according to the arrangement mode in the channel hole
The semiconductor structure is chamfer, with the slope in the channel hole formed in each film layer of exposure；
Wherein, 10 °≤α≤80 °；
When being scanned using the test equipment to the slope, slope described in the test equipment face is swept
It retouches；
The measurement method further include:
According to the spacing L ' between the channel hole each in the inclined angle alpha and the flat porous figure, each channel is calculated
The height in hole；
Wherein, the spacing between the adjacent channel hole is equal；The value of difference in height △ H between the adjacent channel hole is L ' *
sinα。
6. the measurement method of channel pore size according to claim 5, which is characterized in that each ditch in the flat porous figure
The shape in road hole is ellipse, and long axis a, short axle b, then the value of the true long axis a ' in the channel hole is a*cos α, really
The value of short axle b ' is b.
7. the measurement method of channel pore size according to claim 5, which is characterized in that each ditch in the flat porous figure
The shape in road hole is rectangle, and a length of a, width b, then the value of the true long a ' in the channel hole is a*cos α, the value of true width b '
For b.
8. the measurement method of the channel pore size according to any one of claim 5-7, which is characterized in that the test
Instrument is SEM measuring instrument.
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107507787B (en) * | 2017-08-31 | 2021-02-12 | 长江存储科技有限责任公司 | Detection method of channel hole |
| CN112729113B (en) * | 2020-12-25 | 2022-03-18 | 长江存储科技有限责任公司 | Method and device for measuring nesting precision |
| CN114322865B (en) * | 2021-12-30 | 2023-12-08 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor device and storage medium |
| CN114295080B (en) * | 2021-12-30 | 2023-12-01 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor device and storage medium |
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| CN1979791A (en) * | 2005-12-08 | 2007-06-13 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting failure dapth of deep channel |
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| CN101996910A (en) * | 2009-08-25 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting testing structure of semiconductor device |
| CN102832152A (en) * | 2012-08-21 | 2012-12-19 | 无锡华润上华科技有限公司 | Online contact hole detection method |
| CN104701323A (en) * | 2015-03-16 | 2015-06-10 | 武汉新芯集成电路制造有限公司 | Storage structure |
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| JP2008070155A (en) * | 2006-09-12 | 2008-03-27 | Fujitsu Ltd | Preparation method for observing sample for transmission electron microscope |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1979791A (en) * | 2005-12-08 | 2007-06-13 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting failure dapth of deep channel |
| CN101211803A (en) * | 2006-12-25 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Groove contour parameter detection method |
| CN101996910A (en) * | 2009-08-25 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting testing structure of semiconductor device |
| CN102832152A (en) * | 2012-08-21 | 2012-12-19 | 无锡华润上华科技有限公司 | Online contact hole detection method |
| CN104701323A (en) * | 2015-03-16 | 2015-06-10 | 武汉新芯集成电路制造有限公司 | Storage structure |
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