CN105667087B - 用于形成喷墨打印头以及包括其的喷墨打印机的方法 - Google Patents
用于形成喷墨打印头以及包括其的喷墨打印机的方法 Download PDFInfo
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Abstract
本发明提供一种用于形成用于静电致动喷墨打印头的多个静电致动器膜片的方法。方法可以包括在蚀刻停止层上形成掩盖致动器膜片层,其中蚀刻停止层插入掩盖膜片层和诸如半导体晶片的操作层之间。掩盖致动器膜片层被图案化以形成多个致动器膜片。多个致动器膜片附连到包括用于致动多个致动器膜片的电路的打印头驱动组件。随后,去除操作层和蚀刻停止层,由此留下附连到打印头驱动组件的多个致动器膜片。
Description
技术领域
本发明涉及喷墨打印设备的领域,并且更特别地,涉及用于静电致动喷墨打印头的方法和结构以及包括静电致动喷墨打印头的打印机。
背景技术
按需喷墨技术广泛用于打印工业中。使用按需喷墨技术的打印机典型地使用热喷墨技术或压电技术。尽管它们比热喷墨器制造更昂贵,但是压电喷墨器通常是有利的,例如原因是它们可以使用更多种多样的墨。
压电喷墨打印头包括压电元件(即,换能器或PZT)的阵列。形成阵列的一个过程可以包括用粘合剂将掩盖压电层可拆卸地粘结到转移载体,然后切割掩盖压电层以形成多个单独的压电元件。可以使用多次切割锯操作以去除相邻压电元件之间的所有压电材料从而提供每个压电元件之间的正确间隔。
压电喷墨打印头典型地还可以包括挠性隔膜,压电元件的阵列附连到所述挠性隔膜。当电压典型地通过与电连接到电源的电极的电连接而施加到压电元件时,压电元件弯曲或偏转,导致隔膜挠曲,通过孔板(即,喷嘴板)中的喷嘴(即,开孔或孔口)从室排出一定量的墨。挠曲还通过开口将墨从主墨储存器吸引到室中以替换排出的墨。
压电元件可以由包括铅的散装材料制造。为了减小基于铅的压电致动器对环境的影响,已研究其它喷墨技术。例如,静电致动器包括电极的使用,当通过供应电压供电时,所述电极吸引并且挠曲硅膜片(例如,隔膜)以将来自墨供给的墨吸引到部分地由膜片形成的墨室中。当从电极去除电压时,硅膜片松弛,由此增加墨室中的压力并且从孔板中的喷嘴喷射墨。
随着打印技术改进,致动器的物理尺寸减小,打印头的指定区域内的喷嘴和致动器的数量相应地增加。形成用于静电致动喷墨打印头的致动器膜片随着尺寸的减小变得愈加困难。例如,使用当前技术,用于静电致动打印头的矩形致动器膜片可以具有大约4mm乘12mm的面积。这些小致动器难以形成并且倾向于破裂。
用于形成静电致动器的阵列的、增加制造产量的简化方法将是期望的。
发明内容
以下呈现简化总结以便提供本发明的一个或多个实施例的一些方面的基本理解。该总结不是广泛概述,也不旨在确定本发明的关键或重要要素,也不界定本发明的范围。相反地,它的主要目的仅仅是以简化形式呈现一个或多个概念作为随后呈现的详细描述的前序。
在实施例中,一种用于形成具有静电致动器阵列的喷墨打印头的方法可以包括在蚀刻停止层的第一表面上形成多个致动器膜片,其中所述多个致动器膜片的每一个与相邻致动器膜片横向地间隔,所述蚀刻停止层插入操作层和所述多个致动器膜片之间,并且所述操作层附连到所述蚀刻停止层的第二表面。所述方法还可以包括将所述多个致动器膜片附连到打印头驱动组件,其中所述打印头驱动组件包括用于致动所述多个致动器膜片的电路。在将所述多个致动器膜片附连到所述打印头驱动组件之后,可以去除所述操作层以暴露所述蚀刻停止层的第二表面。在去除所述操作层之后,可以去除所述蚀刻停止层。
在另一实施例中,一种用于形成具有喷墨打印头的喷墨打印机的方法,所述喷墨打印头具有静电致动器阵列,所述方法包括在蚀刻停止层的第一表面上形成多个致动器膜片,其中所述多个致动器膜片的每一个与相邻致动器膜片横向地间隔,所述蚀刻停止层插入操作层和所述多个致动器膜片之间,并且所述操作层附连到所述蚀刻停止层的第二表面。所述方法还可以包括将所述多个致动器膜片附连到打印头驱动组件,其中所述打印头驱动组件包括用于致动所述多个致动器膜片的电路。在将所述多个致动器膜片附连到所述打印头驱动组件之后,可以去除所述操作层以暴露所述蚀刻停止层的第二表面。在去除所述操作层之后,可以去除所述蚀刻停止层。然后可以将所述多个致动器膜片和所述打印头驱动组件封闭在打印机外壳内。
另一实施例可以包括一种用于包括多个静电致动器阵列的多个喷墨打印头的过程中结构,其中每个打印头包括来自所述多个静电致动器阵列的至少一个静电致动器阵列。所述过程中结构可以包括第一半导体晶片衬底组件,所述第一半导体晶片衬底组件包括具有第一表面和与所述第一表面相对的第二表面的蚀刻停止层,用于所述多个喷墨打印头的多个静电致动器膜片,其中每个静电致动器膜片与相邻静电致动器膜片横向地间隔并且每个静电致动器膜片附连到所述蚀刻停止层的第一表面,以及附连到所述蚀刻停止层的第二表面的操作层,其中所述蚀刻停止层插入所述操作层和所述多个致动器膜片之间。所述过程中结构还可以包括不同于所述第一半导体晶片衬底组件的第二半导体晶片衬底组件,其中所述第二半导体晶片衬底组件包括用于所述多个打印头的多个打印头驱动组件。
附图说明
包含在该说明书中并且构成说明书的一部分的附图示出本发明的实施例并且与描述一起用于解释本发明的原理。在附图中:
图1-7是描绘根据本发明的实施例形成的用于静电致动器阵列的各种过程中组件的横截面;
图8是包括用于多个打印头的多个芯片的半导体晶片衬底组件的平面图,其中每个芯片对应于不同打印头;以及
图9是根据本发明的实施例的包括一个或多个静电致动打印头的打印机的透视图。
应当注意附图的一些细节已被简化并且绘制成便于本发明的理解而不是保持严格的结构精度、细节和比例。
具体实施方式
现在将详细地参考本发明的示例性实施例,在附图中示出其中的例子。只要有可能,相同的附图标记将在附图中始终用于表示相同或相似的部分。
当在本文中使用时,除非另外指出,词语“打印机”包含为了任何目的执行打印输出功能的任何装置,例如数字复印机、编书机、传真机、多功能机、静电照相设备等。
本发明的实施例可以提供同时组装到打印头子组件上的多个静电致动器膜片(即,阵列),其中子组件包括多个静电致动器电极。实施例还可以包括同时组装到用于多个不同打印头的多个不同打印头芯片上的多个静电致动器膜片阵列。本文中所述的打印头组装过程可以简化组装过程并且增加设备产量,由此导致制造成本减小。
在图1-7的横截面中描绘可以在本发明的实施例期间形成的过程中结构。将领会根据本发明的结构和过程可以包括为了简单起见未描绘的其它处理步骤或子结构,并且描绘的过程或子结构可以被去除或修改。
图1描绘根据本发明的实施例的半导体晶片衬底组件。组件可以包括硅-绝缘体(SOI)组件10,其也可以被称为硅-绝缘体-硅(SOIS)组件。SOI组件10可以包括操作层12、绝缘体层14和掩盖膜片层16,其中绝缘体层14插入操作层12和掩盖膜片层16之间。例如,操作层12可以是硅或其它半导体操作晶片,具有大约50μm到大约5,000μm、或大约100μm到大约2,500μm、或大约200μm到大约800μm的厚度。可以是在操作层12上生长或淀积的氧化硅的绝缘体层14可以具有大约0.5μm到大约25μm、或大约1.0μm到大约10μm、或大约2.0μm到大约6.0μm的厚度。可以是硅或另一半导体的掩盖膜片层16可以具有大约1.0μm到大约100μm、或大约5.0μm到大约50μm、或大约8.0μm到大约25μm的厚度。图1的结构可以由本领域的普通技术人员从本文中的描述形成。SOI组件10可以是完整无缺的半导体晶片的一部分,或者是从半导体晶片截取的半导体晶片部段的一部分。如图1中所示,操作层12定位在绝缘体层14的第一表面13上或以另外方式附连到所述第一表面,并且掩盖膜片层16定位在绝缘体层14的第二表面15上或以另外方式附连到所述第二表面。
在形成SOI组件10之后,图案化掩模18形成于掩盖膜片层16之上或上方,如图1中所示。图案化掩模18可以是例如使用常规光刻技术形成的光致抗蚀剂层,例如使用激光蚀刻等形成的聚合物掩模。掩模18覆盖掩盖膜片层16的第一部分并且让掩盖膜片层16的第二部分暴露。
随后,使用掩模18作为图案蚀刻图1的掩盖膜片层16,并且去除掩模18以导致类似于图2中所示的结构。图2的结构包括定位(例如,附连)在蚀刻停止层14的第二表面15上的致动器膜片20的阵列。在所示的横截面位置处,每个致动器膜片20与相邻致动器膜片20横向地分离或间隔一定距离或空间。将领会取决于设备设计,两个或更多个相邻致动器膜片20可以在不同横截面位置处连接。
接着,图2的经蚀刻的SOI组件10对准并且附连或粘结到打印头驱动组件30,如图3中所示。在实施例中,每个静电致动器膜片20可以物理地附连到驱动组件30,如图所示。例如,驱动组件30可以包括硅衬底32,如硅晶片,以及介电层34,如掩盖氧化物层。驱动组件30还可以包括驱动电路,其包括多个致动器电极36、提供多个晶体管门的多个驱动电路电极38和多个专用集成电路(ASIC)垫片40,每一个可以在一个或多个位置处通过氧化物层34与硅晶片32电绝缘。打印头驱动组件30的驱动电路配置成在打印头的操作和使用期间致动多个致动器膜片20,并且可以提供其它打印头功能性。驱动组件30还可以包括一个或多个适形介电层,如氧化硅内层42和氮化物外层44。
可以执行SOI组件10和驱动组件30的对准使得每个静电致动器膜片20与致动器电极36中的一个对准并且在其正上方,如图所示。每个致动器膜片20可以例如使用标准晶片粘结技术、阳极粘结过程、粘合剂(为了简单起见未描绘)等附连到适形介电外层44。尽管图描绘两个静电致动器20,但是将领会用于每个打印头的每个芯片可以具有数百或数千个静电致动器20,而每个致动器20可以使用驱动电路单独地和唯一地寻址以从一个或多个喷嘴喷射墨。因此可以有在每个静电致动器20正下方的多个致动器电极36。另外,SOI组件10和驱动组件30可以包括用于多个不同打印头的多个不同芯片的部分。
在将SOI组件10附连到驱动组件30之后,可以薄化操作层12,如图4中所示。为了减小制造时间,可以使用具有高蚀刻或去除速率的快速去除过程执行操作层12的薄化。去除技术可以包括下列的一种或多种:半导体减薄,具有高蚀刻速率的湿法或干法蚀刻,具有高去除速率的化学、机械或化学-机械平面化等,以及这些的组合。可以预期各种化学蚀刻,例如干法蚀刻,如包括六氟化硫(SF6)、四氟化碳(CF4)、CF4/O2、氯气(Cl2)、溴化氢(HBr)、它们的组合或另一合适的干法蚀刻中的一种或多种的等离子体辅助蚀刻。也可以预期湿法蚀刻,例如氢氧化钾(KOH)、氢氧化四甲铵(TMAH)、二氟化氙(XeF2)、它们的组合或另一合适的湿法蚀刻。使用各向同性蚀刻,两个晶片之间的界面的掩蔽(为了简单起见未描绘)可能是必要的,从而保护打印头驱动组件30免于蚀刻。
操作层12的快速薄化可以是在绝缘体层14的暴露之前终止的定时去除过程。薄化可以去除操作层12的第一厚度,同时留下操作层12的第二厚度。将领会可以使用更慢的过程并且使用绝缘体层14作为蚀刻停止执行操作层12的薄化以完全去除操作层12,代价是减小产量。
随后,可以例如使用具有慢蚀刻速率的慢去除过程完全去除如图4中所示的操作层12的剩余第二厚度以暴露绝缘体层14的第一表面13,如图5中所示。绝缘体层14可以用作蚀刻停止层。在实施例中,可以使用湿法或干法蚀刻去除薄化操作层12,其对绝缘体层14(例如氧化物)有选择地去除操作层12的材料(例如硅)。如果选择对绝缘体层的材料具有高选择性的蚀刻(即,在去除操作层12时不去除或去除很少暴露绝缘体层14的蚀刻),则可以获得更高的蚀刻速率。可以预期各种化学蚀刻,例如如上所述的湿法或干法蚀刻或另一合适的蚀刻。
接着,完全去除绝缘体层14以导致类似于图6中所示的结构。可以使用蚀刻剂去除绝缘体层14,所述蚀刻剂对在驱动组件30(如氮化物适形外层44、垫片40和致动器电极36)上暴露的材料有选择地去除绝缘体层14(例如氧化物)。可以预期各种蚀刻,例如包括四氟化碳(CF4,甲烷)、CF4和氢气(H2)的混合物、六氟乙烷(C2F6)、三氟甲烷(CHF3)或另一合适的干法蚀刻中的一种或多种的干法蚀刻,或包括氟化氢(HF)或缓冲氧化物湿法蚀刻(BOE)中的一种或多种的湿法蚀刻,以及其它合适的湿法或干法蚀刻。
接着,根据本领域中已知的技术完成附加层以形成完成打印头。如图7中所示,形成的附加层可以包括一个或多个支座层70。随后,在其中具有多个喷嘴74的孔板72可以附连到一个或多个支座层70。如图7中所示,孔板72通过直接附连到一个或多个支座层70间接地附连到驱动组件30和多个致动器膜片20。致动器膜片20、支座层70和孔板72因此形成多个墨室76,其中每个墨室76至少部分地由致动器膜片20的表面、一个或多个支座层70的表面和孔板72的表面限定。在使用期间,墨室76填充有墨96(图9),所述墨在使用施加到致动器电极36的电压致动致动器膜片20期间从喷嘴74喷射。
将领会图7是简化示意图以便于本发明的理解,并且实际打印头可以包括为了简单起见未描绘的附加结构,并且所示的结构可以被去除或修改。此外,图7的结构可以是在晶片的切割之前的晶片级组件的一部分,在切割之后的单个半导体的一部分,或在结构形成之前已切割的晶片部段上形成的组件。
图8描绘可以根据本发明的实施例形成的过程中半导体晶片衬底组件80的平面图。半导体晶片衬底组件80包括提供操作层12的半导体晶片82。半导体晶片衬底组件80包括多个半导体芯片84,其中多个芯片84的每个芯片84可以用于形成单个打印头94(图9)。每个芯片84包括致动器膜片20的阵列。类似的过程中第二半导体晶片衬底组件(其可以看上去类似于图8并且因此为了简单起见未单独地描绘)可以包括具有多个打印头驱动组件的多个芯片,其中每个打印头驱动组件30(图7)用于多个打印头中的一个。第一半导体晶片衬底组件80和具有打印头驱动组件30的第二半导体晶片衬底组件可以使用微型制造技术形成。因此本发明的实施例允许在单个半导体晶片82上同时形成用于多个打印头94的多个半导体芯片84。随后,每个芯片84上的多个致动器膜片20可以以晶片形式附连到包括多个打印头驱动组件30的类似的第二半导体晶片衬底组件,如上所述。然后可以通过沿着每个相邻芯片84之间的切槽区域86切割半导体晶片,呈晶片形式的多个芯片84单一化为多个单独的芯片,以导致附连到用于多个打印头中的多个打印头驱动组件的多个打印头致动器阵列。每个半导体晶片衬底组件可以是整个未切割(例如,未单一化)半导体晶片、半导体晶片的切割部分或另一半导体衬底。
图9描绘包括打印机外壳92的打印机90,包括本发明的实施例(例如类似于图7中所示的结构)的至少一个打印头94已安装在所述打印机外壳中。外壳92可以封闭打印头94。在操作期间,墨96从一个或多个打印头94中的一个或多个喷嘴74喷射。打印头94根据数字指令操作以在打印介质98(如纸片材、塑料等)上产生期望图像。打印头94可以相对于打印介质98在扫描运动中来回移动以逐幅地生成打印图像。替代地,打印头94可以保持固定并且打印介质98相对于它移动,在单次通过中产生与打印头94一样宽的图像。打印头94可以比打印介质98窄或与其一样宽。在另一实施例中,打印头94可以打印到诸如旋转鼓或带(为了简单起见未描绘)的中间表面以便随后转印到打印介质98。
尽管阐述本发明的宽范围的数值范围和参数是近似值,但是尽可能精确地报告具体例子中所述的数值。然而,任何数值固有地包含必然由在它们的相应测试测量中发现的标准偏差产生的某些误差。而且,本文中公开的所有范围应当被理解为包含包括在其中的任何和所有子范围。例如,“小于10”的范围可以包括最小值零和最大值10之间(并且包括零和10)的任何和所有子范围,也就是说,具有等于或大于零的最小值和等于或小于10的最大值的任何和所有子范围,例如1至5。在某些情况下,所述用于参数的数值可以具有负值。在该情况下,描述为“小于10”的范围的示例性值可以取负值,例如-1、-2、-3、-10、-20、-30等。
Claims (14)
1.一种用于形成包括静电致动器阵列的喷墨打印头的方法,所述方法包括:
在蚀刻停止层的第一表面上形成多个致动器膜片,其中:
所述多个致动器膜片的每一个与相邻致动器膜片横向地间隔;
所述蚀刻停止层插入操作层和所述多个致动器膜片之间;并且
所述操作层附连到所述蚀刻停止层的第二表面;
将所述多个致动器膜片附连到打印头驱动组件,其中所述打印头驱动组件包括用于致动所述多个致动器膜片的电路;
在将所述多个致动器膜片附连到所述打印头驱动组件之后,使用包括以下的方法去除所述操作层以暴露所述蚀刻停止层的第二表面:
使用具有第一蚀刻速率的第一去除过程去除所述操作层的第一厚度;然后
使用具有比所述第一蚀刻速率慢的第二蚀刻速率的第二去除过程去除所述操作层的第二厚度以暴露所述蚀刻停止层;以及
在去除所述操作层之后,去除所述蚀刻停止层。
2.根据权利要求1所述的方法,其还包括:
形成附连到所述多个致动器膜片的一个或多个支座层;以及
将在其中包括多个喷嘴的孔板附连到所述一个或多个支座层以形成多个墨室,其中每个墨室至少部分地由所述致动器膜片的表面、所述一个或多个支座层的表面和所述孔板的表面限定。
3.根据权利要求1所述的方法,其中:
所述操作层是半导体晶片;并且
所述多个致动器膜片的形成同时形成用于多个喷墨打印头的多个致动器膜片阵列。
4.根据权利要求1所述的方法,其中:
在所述蚀刻停止层的第一表面上形成所述多个致动器膜片导致在氧化物蚀刻停止层上形成多个硅致动器膜片;以及
所述方法进一步包括在所述操作层上形成所述氧化物蚀刻停止层,其中所述操作层是完整的硅半导体晶片。
5.根据权利要求4所述的方法,进一步包括:
提供所述硅半导体晶片,其中所述硅半导体晶片具有50μm至5000μm的厚度;
形成所述多个硅致动器膜片,以具有1.0μm至100μm的厚度;以及
形成所述氧化物蚀刻停止层,以具有0.5μm至25μm的厚度。
6.根据权利要求1所述的方法,其中所述多个致动器膜片的形成包括:
在所述蚀刻停止层上形成掩盖膜片层;
在所述掩盖膜片层上形成图案化掩模;以及
使用所述图案化掩模作为图案对所述掩盖膜片层进行图案化,以形成所述多个致动器膜片。
7.根据权利要求1所述的方法,其中:
所述多个致动器膜片的形成产生了用于在第一半导体晶片上的多个打印头的多个致动器膜片阵列;
所述多个致动器膜片的附连将所述多个致动器膜片阵列附连至用于在第二半导体晶片上的多个打印头的多个打印头驱动组件;以及
所述方法进一步包括将所述第一半导体晶片和第二半导体晶片切割成用于多个打印头的多个半导体芯片。
8.一种用于形成包括喷墨打印头的喷墨打印机的方法,所述喷墨打印头具有静电致动器阵列,所述方法包括:
在蚀刻停止层的第一表面上形成多个致动器膜片,其中:
所述多个致动器膜片的每一个与相邻致动器膜片横向地间隔;
所述蚀刻停止层插入操作层和所述多个致动器膜片之间;并且
所述操作层附连到所述蚀刻停止层的第二表面;
将所述多个致动器膜片附连到打印头驱动组件,其中所述打印头驱动组件包括用于致动所述多个致动器膜片的电路;
在将所述多个致动器膜片附连到所述打印头驱动组件之后,使用包括以下的方法去除所述操作层以暴露所述蚀刻停止层的第二表面:
使用具有第一蚀刻速率的第一去除过程去除所述操作层的第一厚度;然后
使用具有比所述第一蚀刻速率慢的第二蚀刻速率的第二
去除过程去除所述操作层的第二厚度以暴露所述蚀刻停止层;
在去除所述操作层之后,去除所述蚀刻停止层;以及
将所述多个致动器膜片和所述打印头驱动组件封闭在打印机外壳内。
9.根据权利要求8所述的方法,其还包括:
形成附连到所述多个致动器膜片的一个或多个支座层;以及
将在其中包括多个喷嘴的孔板附连到所述一个或多个支座层以形成多个墨室,其中每个墨室至少部分地由所述致动器膜片的表面、所述一个或多个支座层的表面和所述孔板的表面限定。
10.根据权利要求8所述的方法,其中:
所述操作层是半导体晶片;并且
所述多个致动器膜片的形成同时形成用于多个喷墨打印头的多个致动器膜片阵列。
11.根据权利要求8所述的方法,其中:
在所述蚀刻停止层的第一表面上形成所述多个致动器膜片导致在氧化物蚀刻停止层上形成多个硅致动器膜片;以及
所述方法进一步包括在所述操作层上形成所述氧化物蚀刻停止层,其中所述操作层是完整的硅半导体晶片。
12.根据权利要求11所述的方法,进一步包括:
提供所述硅半导体晶片,其中所述硅半导体晶片具有50μm至5000μm的厚度;
形成所述多个硅致动器膜片,以具有1.0μm至100μm的厚度;以及
形成所述氧化物蚀刻停止层,以具有0.5μm至25μm的厚度。
13.根据权利要求8所述的方法,其中所述多个致动器膜片的形成包括:
在所述蚀刻停止层上形成掩盖膜片层;
在所述掩盖膜片层上形成图案化掩模;以及
使用所述图案化掩模作为图案对所述掩盖膜片层进行图案化,以形成所述多个致动器膜片。
14.根据权利要求8所述的方法,其中:
所述多个致动器膜片的形成产生了用于在第一半导体晶片上的多个打印头的多个致动器膜片阵列;
所述多个致动器膜片的附连将所述多个致动器膜片阵列附连至用于在第二半导体晶片上的多个打印头的多个打印头驱动组件;以及
所述方法进一步包括将所述第一半导体晶片和第二半导体晶片切割成用于多个打印头的多个半导体芯片。
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CN105667087A (zh) | 2016-06-15 |
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