CN105655471A - Light emitting diode packaging structure and bearing part thereof - Google Patents
Light emitting diode packaging structure and bearing part thereof Download PDFInfo
- Publication number
- CN105655471A CN105655471A CN201610203583.7A CN201610203583A CN105655471A CN 105655471 A CN105655471 A CN 105655471A CN 201610203583 A CN201610203583 A CN 201610203583A CN 105655471 A CN105655471 A CN 105655471A
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- Prior art keywords
- die pad
- colloid
- accommodation space
- bearing part
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
The invention discloses a light emitting diode packaging structure and a bearing part thereof. The light emitting diode packaging structure comprises the bearing part, a light emitting diode chip and at least one lead. The bearing part comprises a lead frame and an insulating adhesive, the lead frame comprises a chip seat and at least one electrode, and the chip seat and the at least one electrode form electrical insulation through a gap. Each electrode is provided with at least one concave structure, and an insulating material at the bottom of the insulating adhesive partially coats the lead frame and fills the gap and each concave structure. The insulating material in each concave structure can lengthen a path through which external moisture permeates into the bearing part, so that surface oxidation of the chip seat and each electrode can be reduced.
Description
The divisional application of application for a patent for invention that the application is the applying date, and to be on May 30th, 2012, application number be " 201210173756.7 ", denomination of invention is " encapsulation structure of LED and bearing part thereof ".
Technical field
The present invention relates to a kind of encapsulation structure of LED and bearing part thereof, particularly relate to a kind of encapsulation structure of LED reducing lead frame generation surface oxidation and bearing part thereof.
Background technology
Light emitting diode (lightemittingdiode, LED) it is the solid-state light-emitting component made with semi-conducting material, great majority use III chemical element and V race chemical element composition, after electrons and holes being combined with additional forward voltage, make energy discharge in the form of light; Shared by electronics in its two poles of the earth body in different materials, electricity hole can rank different, between the two can the gap on rank be called energy gap (gap), impact combine after the energy of photon and send the light of different wave length, comprise visible ray and black light.
Maximum being characterized in that of light emitting diode: environmental protection, power consumption is little, luminous efficiency is high, long service life, maintenance cost are low, safe and reliable, response speed is fast and rich color, its lighting source progressively replaces the conventional lights source of high consume, become new and illuminate main flow from generation to generation, be widely used to consumption electronic products, traffic sign and automobile lighting, various situation light fixture and specific function such as plant growing field etc. at present.
Light emitting diode is mainly made up of parts such as chip, lead frame, insulation colloid and packaging adhesive materials. wherein lead frame has two big functions: one is connect each assembly and support light-emittingdiode encapsulating structure, two be when assembly operate can transporting heat energy effectively, therefore, can say it is the parts of extremely key in LED package. along with developing rapidly of integrated circuit, the variation of its highly integrated, multifunction and encapsulation, lead frame just develops towards light, thin, short, little direction, and the requirement for lead frame is also more and more high. but, it is exposed in oxygen or aqueous vapor when package structure for LED, aqueous vapor upwards can be penetrated into along the joint interface between itself and packaging adhesive material by the structure lateral border of lead frame or by lower surface etc., the lead frame surface causing the bottom of the interior space of encapsulating structure exposed aoxidizes, especially the accommodation space of colloid of insulating is subject to aqueous vapor invasion most corresponding to the indent (ear) that the electrode routing position of lead frame is formed, and make electrode routing position produce oxidation blackening phenomena, this kind of oxidation blackening surface can absorb reflection light, and the brightness that light emitting diode is outwards penetrated by accommodation space is declined, cause light color uneven or affect the routing reliability of wire, and then add package structure for LED unstability operationally, the yield causing product reduces.
Therefore, it is necessary to provide encapsulation structure of LED and the bearing part thereof of a kind of improvement, to solve the problem existing for prior art.
Summary of the invention
In view of this, namely the purpose of the present invention is in that to provide a kind of package structure for LED and bearing part thereof, and it can improve the technical problems such as the lead frame surface oxidation existing for existing encapsulating structure technology.
One embodiment of the invention provides a kind of encapsulation structure of LED, and it comprises: a bearing part, a light-emitting diode chip for backlight unit and at least one wire. Described bearing part includes: a lead frame and an insulation colloid. Described lead frame has a die pad and at least one electrode, is formed by a gap and be electrically insulated between described die pad and electrode, and described electrode respectively has a routing position and a sunk structure, the relatively close described die pad in described routing position. Described insulation colloid, its top has an opening, there is an inclined wall, to form an opening and an accommodation space, having at least one recess in described accommodation space, and described sunk structure correspondence is positioned at described indent, described lead frame is positioned at the bottom of described accommodation space, and lead frame described in the insulant covered section bottom described insulation colloid, and fill to described gap and sunk structure. Described light-emitting diode chip for backlight unit is positioned in described die pad. Described wire is electrically connected the routing position of described light-emitting diode chip for backlight unit and described electrode, the position that wherein said recess is electrically connected with the electrodes corresponding to described wire.
Furthermore, another embodiment of the present invention provides the bearing part of a kind of light-emittingdiode encapsulating structure, and it comprises: a die pad, two electrodes and an insulation colloid. Described die pad has a chip bearing region. Described two electrodes are positioned at the both sides of described die pad, are electrically insulated respectively through a gap and described die pad, and described electrode respectively has a routing position and a sunk structure, the relatively close described die pad in described routing position. Described insulation colloid has an inclined wall, to form an opening and an accommodation space, there is in described accommodation space at least one recess, described sunk structure correspondence is positioned at described indent, and described die pad and electrode are positioned at the bottom of described accommodation space, and die pad and the described electrode of part described in the insulant covered section bottom described insulation colloid, and fill to described gap and sunk structure.
It addition, further embodiment of this invention provides the bearing part of a kind of light-emittingdiode encapsulating structure, it comprises: a die pad, two electrodes and an insulation colloid. Described die pad has a chip bearing region and two grooves, and described two grooves are positioned at the both ends in described chip bearing region. Described two electrodes are positioned at the both sides of described die pad and are electrically insulated respectively through a gap and described die pad, described gap is communicated in described groove, described electrode respectively has a routing position and a sunk structure, the relatively close described die pad in described routing position. Die pad described in insulant covered section bottom described insulation colloid and the described electrode of part, and filling to described groove, gap and sunk structure, the insulant bottom wherein said insulation colloid covers described die pad upper surface region except a chip predetermined set region.
For the foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, coordinate institute's accompanying drawings, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the three-dimensional structure diagram of the encapsulation structure of LED of one embodiment of the invention.
Fig. 2 is the encapsulation structure of LED sectional view along line A-A direction of Fig. 1.
Fig. 3 be Fig. 1 encapsulation structure of LED in the three-dimensional structure diagram of lead frame.
Fig. 4 is the three-dimensional structure diagram of the encapsulation structure of LED of another embodiment of the present invention
Fig. 5 is the three-dimensional structure diagram of lead frame in Fig. 4 encapsulation structure of LED.
Detailed description of the invention
For making above-mentioned purpose of the present invention, feature and advantage become apparent, present pre-ferred embodiments cited below particularly, coordinate accompanying drawing, be described below in detail. Furthermore, the direction term that the present invention is previously mentioned, for instance " on ", D score, "left", "right", "front", "rear", " interior ", " outward ", " side " etc., be only the direction with reference to annexed drawings. Therefore, the direction term of use is to illustrate and understand the present invention, and is not used to the restriction present invention.
The present invention is by describing the detail structure of the above-mentioned each assembly of one embodiment of the invention, assembled relation and operation principles thereof one by one in detail below with Fig. 1 to 2.
With reference to shown in Fig. 1, it discloses the encapsulation structure of LED 10 of one embodiment of the invention, and it mainly comprises bearing part 101, light-emitting diode chip for backlight unit 102, at least one wire 103 and a light transmitting cover 104.
Described bearing part 101 comprises a lead frame (leadframe) 105 and an insulation colloid 106, and the top of described insulation colloid 106 has an opening, and forms an accommodation space; Described light-emitting diode chip for backlight unit 102 is positioned on described lead frame 105, and described wire 103 is electrically connected described light-emitting diode chip for backlight unit 102 and described lead frame 105, and described light transmitting cover 104 covers the opening part of described bearing part 101. The opening of described bearing part 101 caves inward and forms an accommodation space, and its bottom inner diameter is slightly smaller than the aperture of opening.
As in figure 2 it is shown, disclose the encapsulation structure of LED sectional view along line A-A direction of Fig. 1. Refer to Fig. 2, described lead frame 105 includes a die pad 107 and is located at two electrodes 108 of the left and right sides of described die pad 107. Gap 109 formation that the insulant of described insulation colloid 106 is filled between described die pad 107 and electrode 108 is electrically insulated. Described gap 109 can separate described die pad 107 and electrode 108 completely on cross section. The manufacture of described lead frame 105 mainly comprises the single or double processing sheet metal with chemical etching or mechanical stamping mode, to define described die pad 107, electrode 108 and gap 109. The material of described lead frame 105 can use copper, copper alloy, iron-nickel alloy or aluminum metal etc., but is not limited thereto. Additionally, can on lead frame 105 plated surface a coat of metal (metalcoating) such as silver-plated or gold-plated, to increase electric conductivity.
As shown in Fig. 1 and 2, described insulation colloid 106 has an inclined wall 110, and to form described opening and accommodation space, described inclined wall 110 is around described light-emitting diode chip for backlight unit 102, and keeps a segment distance with described light-emitting diode chip for backlight unit 102. Described lead frame 105 is positioned at the bottom of described accommodation space. Described accommodation space has at least one recess 111, and described recess 111 correspondence is positioned at a routing position of described electrode 108. The material of described insulation colloid 106 can be lighttight packaging adhesive material or ceramic material, for instance comprising epoxy resin (epoxy) and filler particles, described filler particles can be glass or alumina particle, but is not limited thereto.
Described light-emitting diode chip for backlight unit 102 is installed in described die pad 107.For example, light-emittingdiode chip 102 can be fixed on described die pad 107 via metal solder. Described wire 103 electricity property respectively connects the electrical connection pad (such as, a positive pole and negative pole connection pad) routing position to the electrode 108 of described lead frame 105 of described light-emitting diode chip for backlight unit 102. In another embodiment, described negative pole connection pad is not arranged at the upper surface of light-emitting diode chip for backlight unit 102 as shown in the previous embodiment, and is disposed on the lower surface of light-emitting diode chip for backlight unit 102. Described negative pole connection pad can be electrically connected to described die pad 107 by a conduction material, and can only arrange an electrode 108.
As shown in Fig. 1 and 2, in the present embodiment, described light transmitting cover 104 covers the opening part of described bearing part 101, to close the accommodation space of described bearing part 101, the material of described light transmitting cover 104 can be the encapsulating material of printing opacity, such as light-transmissive resin or glass, wherein light-transmissive resin is selected from epoxy resin (epoxy) and is or silicone resin (silicone) such as is at the light-transmissive resin material. Described light-emitting diode chip for backlight unit 102 light-emitting area upward can additionally be coated with the printing opacity colloid (not illustrating) containing phosphor powder. The light of described light-emitting diode chip for backlight unit 102 injection, for instance: blue light, it is possible to be converted to the light of different colours by phosphor powder, for instance: green glow, gold-tinted or HONGGUANG, the light of its different colours remixes to produce white light. In other embodiments of the invention, phosphor powder also can be mixed light transmitting cover 104 and replace the printing opacity colloid containing phosphor powder.
Fig. 3 discloses the three-dimensional structure diagram of lead frame in the encapsulation structure of LED of Fig. 1. As shown in Figure 3, described electrode 108 is except having a routing position (sign), separately there is a sunk structure 114, the relatively close described die pad 107 in described routing position, and the outer side edges of the relatively close described insulation colloid 106 of described sunk structure 114. Described sunk structure 114 can make in the lump while etching or being stamped and formed out described die pad 107 and electrode 108, such as use wet type half-etching (halfetching) method, and using copper chloride as copper etchant solution, coordinate etch mask to define the figure of described sunk structure 114. Additionally, sunk structure 114 described in insulant filling part bottom described insulation colloid 106. Owing to the sunk structure 114 of described electrode 108 is filled with insulant, and corresponding to described recess 111 (referring to Fig. 2) place, make aqueous vapor originally elongated with the path that recess 111 is penetrated in the gap of insulation colloid 106 along described electrode 108 lower surface (or side surface), therefore can effectively reduce the probability of the surface oxidation at the routing position penetrating into and then occurring described electrode 108 because of aqueous vapor.
As shown in Figure 3, both ends 112a, 112b of described die pad 107 respectively has groove 113a, a 113b, described both ends 112a, 112b refer to the antelabium of the two other side of described die pad 107, and described groove 113a, 113b can in etching or the making simultaneously all together being stamped and formed out described die pad 107 and electrode 108. Described groove 113a, 113b are two grooves, and it is horizontally through described die pad 107, and the two ends of described groove 113a, 113b are connected with described gap 109. A chip bearing region of described die pad 107 it is defined as between described two groove 113a, 113b and described two gaps 109. Insulant covered section lead frame 105 bottom described insulation colloid 106, and also fill to described groove 113a, 113b.
As shown in figs. 4 and 5, it discloses the encapsulation structure of LED of another embodiment of the present invention similar in appearance to Fig. 1 embodiment and approximately along by the component Name of Fig. 1 embodiment and figure number, wherein the encapsulation structure of LED 10 of Fig. 4 comprises a bearing part 101 equally, one light-emitting diode chip for backlight unit 102, at least one wire 103 and a light transmitting cover 104, described bearing part 101 comprises lead frame 105 and an insulation colloid 106, described lead frame 105 has die pad 107 and two electrodes 108, a gap 109 it is respectively provided with between described die pad 107 and each electrode 108, described insulation colloid 106 has an inclined wall 110, to form opening and the accommodation space at described bearing part 101 top. described accommodation space has at least one recess 111, and described recess 111 correspondence is positioned at a routing position of described electrode 108. both ends 112a, 112b of described die pad 107 is formed groove 113c, a 113d respectively. described electrode 108 respectively has a routing position and a sunk structure 114.
Groove 113c, 113d of die pad 107 described in the present embodiment extends across the bottom margin 106a (referring to Fig. 5) of the accommodation space in described insulation colloid 106, and makes the described die pad 107 exposed surface in the accommodation space of described insulation colloid 106 minimize (that is the insulant bottom described insulation colloid 106 covers described die pad 107 upper surface region except a chip predetermined set region (i.e. chip bearing region)).
Insulant bottom described insulation colloid 106 is substantial amounts of to be filled in described groove 113c, 113d, make script aqueous vapor elongated with the path that the gap of described insulation colloid 106 is penetrated into along both ends 112a, 112b lower surface (or side surface) of described die pad 107, and also can relatively reduce the metal surface of exposure, therefore can effectively reduce the chance of the surface oxidation penetrating into and then occurring described die pad 107 because of aqueous vapor. Additionally, owing to the sunk structure 114 of described electrode 108 is filled with insulant, and corresponding to described recess 111 place, make the path that aqueous vapor is penetrated into along described electrode 108 lower surface (or side surface) originally elongated, therefore equally also can effectively reduce the probability of the surface oxidation at the routing position penetrating into and then occurring described electrode 108 because of aqueous vapor.
The present invention is been described by by above-mentioned related embodiment, but above-described embodiment is only the example implementing the present invention. It must be noted that, it has been disclosed that embodiment do not limit the scope of the present invention. On the contrary, be contained in the amendment of the spirit and scope of claims and equalization arranges and is all included in the scope of the present invention.
Claims (10)
1. an optical package structure, it is characterised in that:
One bearing part, described bearing part includes:
One lead frame, has a Part I and at least one Part II, is formed by a gap and separate between described Part I and Part II, and described Part II has an electric connection position and a sunk structure; And
Colloid forms an accommodation space, has a bottom margin and overlap described sunk structure, lead frame described in described colloid covered section, and filling to described gap and sunk structure in described accommodation space;
One optical chip, is positioned at described Part I; And
At least electrical connection component, it is electrically connected the electric connection position of described optical chip and described electrode.
2. optical package structure as claimed in claim 1, it is characterised in that: described die pad has at least one groove, extends across the bottom margin of accommodation space in described colloid.
3. optical package structure as claimed in claim 1, it is characterised in that: having at least one recess in described accommodation space, described sunk structure corresponds to described indent.
4. optical package structure as claimed in claim 1, it is characterised in that: described optical package structure also comprises: a light transmitting cover, covers the opening part of described bearing part.
5. the bearing part of an optical package structure, it is characterised in that:
One die pad, has a chip bearing region;
At least one electrode, is positioned at the side of described die pad, is separated with described die pad by a gap, and described electrode respectively has an electric connection position and a sunk structure; And
Colloid forms an accommodation space, described die pad and electrode are exposed to described accommodation space, and described colloid and filling to described gap and sunk structure, the bottom margin expose portion of the accommodation space of described colloid fills the colloid to described sunk structure.
6. the bearing part of optical package structure as claimed in claim 5, it is characterised in that: having at least one recess in described accommodation space, described sunk structure corresponds to described indent.
7. the bearing part of optical package structure as claimed in claim 5, it is characterised in that: described die pad has at least one groove, extends across the bottom margin of accommodation space in described colloid.
8. the bearing part of an optical package structure, it is characterised in that:
One die pad, has a chip bearing region and at least one groove, and described groove is positioned at the one end in described chip bearing region;
At least one electrode, being positioned at the side of described die pad, be electrically insulated respectively through a gap and described die pad, described gap is communicated in described groove, described electrode respectively has an electric connection position and a sunk structure, the relatively close described die pad in described electric connection position; And
Colloid, its top has an opening and forms an accommodation space, and die pad and described electrode described in described colloid covered section, and filling to described groove, gap and sunk structure, wherein said colloid covers described die pad upper surface region except described chip bearing region.
9. the bearing part of optical package structure as claimed in claim 8, it is characterised in that: the described groove of described die pad extends across the bottom margin of the accommodation space in described colloid.
10. the bearing part of optical package structure as claimed in claim 8, it is characterised in that: the material of described colloid is lighttight packaging adhesive material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203583.7A CN105655471B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and its load-bearing part |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203583.7A CN105655471B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and its load-bearing part |
| CN201210173756.7A CN102751425B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and bearing part thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210173756.7A Division CN102751425B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and bearing part thereof |
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| Publication Number | Publication Date |
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| CN105655471A true CN105655471A (en) | 2016-06-08 |
| CN105655471B CN105655471B (en) | 2019-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610203583.7A Active CN105655471B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and its load-bearing part |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023070443A1 (en) * | 2021-10-28 | 2023-05-04 | 深圳市大疆创新科技有限公司 | Diode chip packaging structure and method, distance measuring device, and movable platform |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| JP2011119557A (en) * | 2009-12-07 | 2011-06-16 | Sony Corp | Light emitting device, and method of manufacturing the same |
| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
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2012
- 2012-05-30 CN CN201610203583.7A patent/CN105655471B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| JP2011119557A (en) * | 2009-12-07 | 2011-06-16 | Sony Corp | Light emitting device, and method of manufacturing the same |
| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023070443A1 (en) * | 2021-10-28 | 2023-05-04 | 深圳市大疆创新科技有限公司 | Diode chip packaging structure and method, distance measuring device, and movable platform |
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| CN105655471B (en) | 2019-01-18 |
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