CN105633227B - High Speed Modulation light emitting diode and its manufacture method - Google Patents
High Speed Modulation light emitting diode and its manufacture method Download PDFInfo
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- CN105633227B CN105633227B CN201511026485.2A CN201511026485A CN105633227B CN 105633227 B CN105633227 B CN 105633227B CN 201511026485 A CN201511026485 A CN 201511026485A CN 105633227 B CN105633227 B CN 105633227B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
The present invention relates to a kind of High Speed Modulation light emitting diode and its manufacture method.Including light-emitting diode chip for backlight unit, light-emitting diode chip for backlight unit includes epitaxial light emission structure, epitaxial light emission structure includes folding cushion, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer, quantum well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride contact layer and the conductive layer set successively, and quantum well layer is undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers and four cycle concentration of deposition are 5 × 1017cm‑3Silicon doping potential barrier indium gallium nitrogen/gallium nitride quantum well layer in any one.Present invention also offers the manufacture method of the High Speed Modulation light emitting diode.High Speed Modulation light emitting diode provided by the present invention at the same time, improves modulation width in reservation and light power similar in conventional light emitting diodes.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of High Speed Modulation light emitting diode and its manufacturer
Method.
Background technology
Semiconductor lighting is also known as solid-state lighting, refers to the illumination by the use of Sony ericsson mobile comm ab as light source, including light-emitting diodes
Manage (Light Emitting Diode, LED) and Organic Light Emitting Diode (Organic Light-Emitting Diode,
OLED).In recent years, it is swift and violent to be known as the semiconductor illumination technique development of " green illumination ", compared with conventional illumination sources, LED
It is not only low in energy consumption, service life length, the advantages that size is small, environmentally protective, good with more modulating performance, and response sensitivity is high.Profit
, can also be signal modulation to LED visible light Shu Shangjin row data while enabling it to be used as illumination with this characteristic of LED
Transmission, realize a kind of emerging light wireless communication technology, you can see optic communication (Visible lightcommunication,
VLC) technology.
The modulation bandwidth of LED refers to device in load-modulate signal, the frequency bandwidth of energy carrying signal maximum, general fixed
Frequency when justice obtains half for the exchange optical power down that LED is exported to a certain frequency reference frequency values is set to the modulation band of LED
It is wide.The modulation bandwidth of LED is the deciding factor of visible light communication system channel capacity and transmission rate, is subject to device reality
Many-sided influence of the factors such as modulation depth, C-V characteristic.In general, the factor for influencing LED modulating characteristics depends primarily upon
Following two aspects：RC time constants and carrier spontaneous radiation service life.
The basic principle of Heterojunction Bipolar Transistors (Heterojunction Bipolar Transistor, HBT) is
Traditional LED is no longer analogous in sky using for composite shine of more sons of few son and base that base is injected into from launch site
Between charged region recombination luminescence.Greatly improve transistor although HBT compares LED and shine speed, but still cannot meet that visible ray leads to
Letter, so being badly in need of the structure of transformation luminescent device, so as to lift the upper limiting frequency of luminescent device response, increases modulation width.
The content of the invention
In order to solve above-mentioned Heterojunction Bipolar Transistors, there are the low visible light communication needs of can not meeting of upper limiting frequency
Technical problem, the present invention provide a kind of High Speed Modulation light emitting diode and its manufacture method established on the basis of HBT structure,
Reservation at the same time, greatly improves the modulation width of the luminescent device with light power similar in conventional light emitting diodes.
The present invention provides a kind of High Speed Modulation light emitting diode, including light-emitting diode chip for backlight unit, the light-emitting diodes tube core
Piece includes substrate, epitaxial light emission structure, collector, base stage and emitter, the epitaxial light emission structure include folding successively set it is slow
Rush layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer, amount
Sub- well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride contact layer and conductive layer, the buffer stack are set
In in the epitaxial growth plane of the substrate, the quantum well layer is undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers and
Four cycle concentration are deposited as 5 × 1017cm-3Silicon doping potential barrier indium gallium nitrogen/gallium nitride quantum well layer in any one, institute
State collector and be arranged on the first n type gallium nitride contact layer, the base stage is arranged on the second p-type indium gallium nitrogen layer, the transmitting
Pole is arranged on the conductive layer.
In a kind of preferred embodiment of High Speed Modulation light emitting diode provided by the invention, the first p-type indium gallium nitrogen
Layer and the second p-type indium gallium nitrogen layer are heavily doped p-type In0.05Ga0.95N base stages, material, which is attached most importance to, adulterates the indium gallium of magnesium addition
Nitrogen, doping concentration are 3 × 1019cm-3。
In a kind of preferred embodiment of High Speed Modulation light emitting diode provided by the invention, the material of the substrate is blue precious
Stone, the material of the cushion, the gallium nitride depletion layer and the n type gallium nitride layer are unintentional doped gallium nitride, institute
The material for stating the first n type gallium nitride contact layer and the second n type gallium nitride contact layer is the gallium nitride of heavily doped silicon impurity,
Doping concentration is 3 × 1017cm-3, the material of the p-type aluminum gallium nitride electronic barrier layer is Al0.15Ga0.85N, the conductive layer are oxygen
Change indium tin transparency conducting layer.
In a kind of preferred embodiment of High Speed Modulation light emitting diode provided by the invention, first n type gallium nitride
Contact layer includes the collector contact table top arranged on its surface, and the second p-type indium gallium nitrogen layer includes the base stage arranged on its surface
Contact table top.
In a kind of preferred embodiment of High Speed Modulation light emitting diode provided by the invention, the collector is arranged on described
Collector contact table top, the base stage are arranged on base stage contact table top.
The present invention provides the manufacture method of above-mentioned High Speed Modulation light emitting diode, comprise the following steps that：
Step 1: providing substrate, substrate, wherein institute are formed in the epitaxial growth plane growth epitaxial light emission structure of the substrate
Stating epitaxial light emission structure includes folding cushion, the first n type gallium nitride contact layer, gallium nitride depletion layer, the p-type aluminum gallium nitride set successively
Electronic barrier layer, the first p-type indium gallium nitrogen layer, quantum well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride
Contact layer and conductive layer, the buffer stack are arranged in the epitaxial growth plane of the substrate, and the quantum well layer is undoped
In0.2Ga0.8N/In0.05Ga0.95N quantum well layers and four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier indium gallium nitrogen/
Any one in gallium nitride quantum well layer；
Step 2: by the substrate with epitaxial light emission structure prepared in etch process processing step one, by etching skill
Art forms base stage contact table top, collector contact table top, then sets base stage, collector and transmitting by the way that Ohm contact electrode is deposited
Pole, is made High Speed Modulation light emitting diode.
In a kind of preferred embodiment of the manufacture method of High Speed Modulation light emitting diode provided by the invention, the step
One comprises the following steps：
Grown buffer layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronics successively on substrate
Barrier layer, the first p-type indium gallium nitrogen layer, undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers, the second p-type indium gallium nitrogen layer, N
Type gallium nitride layer, the second n type gallium nitride contact layer and conductive layer, after epitaxial process, carry out 700 to epitaxial structure and take the photograph
High-temperature annealing activation p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer and the second p-type indium gallium nitrogen layer of family name's degree.
In a kind of preferred embodiment of the manufacture method of High Speed Modulation light emitting diode provided by the invention, the step
One comprises the following steps：
Grown buffer layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronics successively on substrate
Barrier layer, the first p-type indium gallium nitrogen layer, four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier InGaN/nitridation
Gallium quantum well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride contact layer and conductive layer, epitaxial growth
After journey, 700 degrees Celsius of high-temperature annealing activation p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium are carried out to epitaxial structure
Nitrogen layer and the second p-type indium gallium nitrogen layer.
In a kind of preferred embodiment of the manufacture method of High Speed Modulation light emitting diode provided by the invention, the step
Two specifically include following steps：
Collector contact table top is formed by etching technics：
The substrate handled in step 1 coating positive photoresist is formed into mask plate, then the mask plate is subjected to first time light
Carve, remove photoresist the figure to be formed and to be carved, and then performs etching technique, to form collector contact table top；
Base electrode is formed by etching technics and contacts table top：
The substrate coating positive photoresist that previous step is handled forms mask plate, then the mask plate is carried out second of light
Carve, remove photoresist the figure to be formed and to be carved, and then performs etching technique, to form base stage contact table top；
Previous step processing is formed into spin coating photoresist on the substrate of collector contact table top and base stage contact table top, after exposure
Expose emitter contact table top, Ohm contact electrode is deposited, in the conductive layer away from the second n type gallium nitride contact layer
Surface forms emitter, base stage is formed on surface of the second p-type indium gallium nitrogen layer away from institute's quantum well layer, in the first N
Surface of the type gallium nitride contact layer away from the cushion forms collector and smears photoresist again, and in collector, base stage and hair
Photoetching development exposes table top at emitter-base bandgap grading, and metal is precipitated at the same time at each table top.
The operation principle of High Speed Modulation light emitting diode provided by the invention is：On the basis of HBT, using from launch site
It is for composite luminous to be injected into more sons of the few son and base of base, then in the first p-type indium gallium nitrogen layer and the second p-type indium gallium
The centre of nitrogen layer is mingled with the quantum well layer so that the carrier getted over to base recombination luminescence in Quantum Well, without coming
And compound carrier is then swept away under the electric field that the collector is formed with the base stage, quick recombination luminescence is left behind
Carrier.
The carrier lifetime τ of base radiation recombinationB≈WB/ 2D, wherein WBFor base thickness, D is expansion of the carrier in base
Dissipate constant.Theoretical calculation understands τBOnly less than 100 picoseconds of magnitude so that the modulation width of luminescent device is up to GHz amounts
Level.Among actual device operation, (i.e. E is emitter to only EB knots, and B is base stage, and space electricity is formed in their interface
He Qu is known as EB knots) it is positively biased, (i.e. B is base stage to BC knots, and C is collector, and forming space-charge region in their interface claims
Tied for BC) it is connected under same potential, tie zero bias equivalent to BC.When device input signal, since EB knots are positively biased, so meeting
There are a large amount of electronics to flow to the base stage, and in base with and the hole current recombination luminescence from the base stage；Simultaneously because
The BC of zero bias tie so that the not few son in BC interfaces accumulation, can to inject from the emitter and be not in time for
The carrier of hole current recombination luminescence flows directly into the diffusion capacitance that the emitter thus greatly reduces device, diffusion electricity
The reduction of appearance is conducive to the upper limiting frequency of lifting response, increases modulation width.
Compared to the prior art, High Speed Modulation light emitting diode provided by the invention and its manufacture method are with beneficial below
Effect：
First, by setting quantum well layer carrier recombination luminescence in Quantum Well.
2nd, by setting the first p-type indium gallium nitrogen layer and the centre of the second p-type indium gallium nitrogen layer to be mingled with the quantum
Rotating fields, can improve recombination rate, lift bandwidth；Without being in time for compound carrier in the collector and the base
Swept away under the electric field that pole is formed.
3rd, since the BC of zero bias is tied so that the not few son in BC interfaces accumulation so that from emitter injection and
It is not in time for the expansion for flowing directly into the emitter with the carrier of hole current recombination luminescence and thus greatly reducing device
Spurious capacitance, the reduction of diffusion capacitance are conducive to the upper limiting frequency of lifting response.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, wherein：
Fig. 1 is the structure diagram of light-emitting diode chip for backlight unit provided by the invention；
Fig. 2 is the substrate of light-emitting diode chip for backlight unit provided by the invention and the partial sectional schematic view of epitaxial light emission structure；
Fig. 3 is the manufacture method flow chart of High Speed Modulation light emitting diode provided by the invention；
Fig. 4 be High Speed Modulation light emitting diode shown in Fig. 3 manufacture method in step 1 flow chart；
Fig. 5 be High Speed Modulation light emitting diode shown in Fig. 3 manufacture method in step 2 flow chart.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only the part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained all other without making creative work
Embodiment, belongs to the scope of protection of the invention.
Also referring to Fig. 1 and Fig. 2, Fig. 1 is the structure diagram of light-emitting diode chip for backlight unit provided by the invention, and Fig. 2 is
The substrate of light-emitting diode chip for backlight unit provided by the invention and the partial sectional schematic view of epitaxial light emission structure.The High Speed Modulation hair
Optical diode includes light-emitting diode chip for backlight unit 1, and the light-emitting diode chip for backlight unit 1 includes substrate 10, epitaxial light emission structure 11, current collection
Pole 13, base stage 15 and emitter 17, the epitaxial light emission structure 11 is arranged on the epitaxial growth plane of the substrate 10, described luminous outer
Prolonging structure 11 includes folding cushion 112, the first n type gallium nitride contact layer 113, gallium nitride depletion layer 114, the p-type aluminium set successively
Gallium nitrogen electronic barrier layer 115, the first p-type indium gallium nitrogen layer 116, quantum well layer 117, the second p-type indium gallium nitrogen layer 118, n type gallium nitride
The 119, second n type gallium nitride contact layer 120 of layer and conductive layer 121, the cushion 112 are stacked at the extension life of the substrate 10
In long face, the collector 13 is arranged on 113 1 side surface of the first n type gallium nitride contact layer, and the base stage 15 is arranged on described
Second p-type indium gallium nitrogen layer, 118 1 side surface, the emitter 17 are arranged on 121 1 side surface of conductive layer.
10 material of substrate is blue gem.The cushion 112, the gallium nitride depletion layer 114 and n type gallium nitride
119 material of layer are non-specially doped gallium nitride, and 112 thickness of cushion is 300nm, and the gallium nitride exhausts layer thickness and is
280nm, 119 thickness of n type gallium nitride layer are 500nm.The first n type gallium nitride contact layer 113 and the second N-type nitrogen
Change the gallium nitride that 120 material of gallium contact layer is heavily doped silicon impurity, doping concentration is 3 × 1017cm-3, thickness is 500nm.
115 material of p-type aluminum gallium nitride electronic barrier layer is Al0.15Ga0.85N, thickness 20nm.The first p-type indium gallium nitrogen layer 116
It is heavily doped p-type In with the second p-type indium gallium nitrogen layer 1180.05Ga0.95N base stages, material, which is attached most importance to, adulterates the indium gallium nitrogen of magnesium addition, mixes
Miscellaneous concentration is 3 × 1019cm-3, thickness 430nm.The quantum well layer 17 is undoped In0.2Ga0.8N/In0.05Ga0.95N
Quantum Well and four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier indium gallium nitrogen/gallium nitride quantum well layer in it is any
One kind, the conductive layer 21 are indium tin oxide transparent conductive layer.
The first n type gallium nitride contact layer 113 is equipped with collector contact table top, and the second p-type indium gallium nitrogen layer 118 is set
There is base stage to contact table top.The collector 13 is arranged on the collector contact table top, and the base stage 15 is contacted arranged on the base stage
Table top, the emitter 17 are arranged on the conductive layer 121.
Also referring to Fig. 3, Fig. 4 and Fig. 5, Fig. 3 is the manufacture method of High Speed Modulation light emitting diode provided by the invention
Flow chart, Fig. 4 be High Speed Modulation light emitting diode shown in Fig. 3 manufacture method in step 1 flow chart, Fig. 5 is shown in Fig. 3
The flow chart of step 2 in the manufacture method of High Speed Modulation light emitting diode.High Speed Modulation light emitting diode 1 provided by the invention
Manufacture method, comprise the following steps：
S1, provide a substrate, and substrate is obtained in the epitaxial growth plane growth epitaxial light emission structure of substrate：
The epitaxial light emission structure includes folded cushion, the first n type gallium nitride contact layer, the gallium nitride set successively and exhausts
Layer, p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer, quantum well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer,
Second n type gallium nitride contact layer and conductive layer, the cushion are arranged on the epitaxial growth plane of the substrate, and the quantum well layer is
Undoped In0.2Ga0.8N/In0.05Ga0.95N Quantum Well or four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier
Indium gallium nitrogen/gallium nitride Quantum Well；
Wherein, a kind of manufacture method of the epitaxial light emission structure, comprises the following steps：
S11, in 2 cun of Sapphire Substrates with MOCVD growth the epitaxial light emission structure containing part substrate, successively fold set
Cushion, the first n type gallium nitride contact layer, gallium nitride depletion layer；
Growing P-type aluminium gallium nitride alloy electronic barrier layer on substrate made from S12, above-mentioned S11, the first p-type gallium indium nitride layer, not
The In of doping0.2Ga0.8N/In0.05Ga0.95N quantum well layers, the second p-type gallium indium nitride layer；
Extension n type gallium nitride layer, the second n type gallium nitride contact layer and conduction are grown made from S13, above-mentioned S12 on substrate
Layer；
The good substrate of above-mentioned growth, be placed under 700 degrees Celsius of nitrogen environment and carry out annealing heat treatment process by S14, swashs
Magnesium in work p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer and the second p-type indium gallium nitrogen layer.
Another manufacture method of the epitaxial light emission structure, comprises the following steps：
S11, in 2 cun of Sapphire Substrates with MOCVD growth the epitaxial light emission structure containing part substrate, successively fold set
Cushion, the first n type gallium nitride contact layer, gallium nitride depletion layer；
It is growing P-type aluminium gallium nitride alloy electronic barrier layer on substrate made from S12, above-mentioned S11, the first p-type gallium indium nitride layer, heavy
Four cycle concentration of product are 5 × 1017cm-3Silicon doping potential barrier InGaN/gallium nitride quantum well layer, the second p-type InGaN
Layer；
Extension n type gallium nitride layer, the second n type gallium nitride contact layer and conduction are grown made from S13, above-mentioned S12 on substrate
Layer；
The good substrate of above-mentioned growth, be placed under 700 degrees Celsius of nitrogen environment and carry out annealing heat treatment process by S14, swashs
Magnesium in work p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer and the second p-type indium gallium nitrogen layer.
S2, the epitaxial light emission structure by being prepared in etch process processing step one, are made High Speed Modulation light emitting diode,
Wherein by preparing lithography mask version, exposure imaging and lithographic technique, base stage contact table top, collector contact table top are carved, then
By the way that Ohm contact electrode is deposited, base stage, collector and emitter are set.
By the epitaxial light emission structure prepared in etch process processing step one wherein in step 2, High Speed Modulation hair is made
Optical diode, specifically includes following steps：
S21, the preparation of first time lithography mask version, first time exposure imaging and etching：
The substrate handled in S1 coating positive photoresist is formed into mask plate, then the mask plate is subjected to first time photoetching, i.e.,
Develop after exposure, carry out degumming process, be removed the glue of collector contact table top to be formed, the glue quilt of remaining unexposed portion
Remain, form the figure to be carved, technique is then performed etching, to form collector contact table top；
Preparation, second of exposure imaging and the etching of S22, second lithography mask version：
The substrate coating positive photoresist that above-mentioned S21 processing is obtained forms mask plate, then the mask plate is carried out second of photoetching,
Develop after exposing, carry out degumming process, be removed the glue of base stage contact table top to be formed, the glue quilt of remaining unexposed portion
Remain, form the figure to be carved, then perform etching technique, to form base stage contact table top；
S23, the preparation of third time lithography mask version, third time exposure imaging：
By spin coating photoresist on the substrate for having formed collector contact table top and base stage contact table top, transmitting is exposed after exposure
Pole contacts table top, and Ohm contact electrode is deposited, is formed on surface of the conductive layer away from the second n type gallium nitride contact layer
Emitter, forms base stage, in first n type gallium nitride on surface of the second p-type indium gallium nitrogen layer away from institute's quantum well layer
Surface of the contact layer away from the cushion forms collector, then smears photoresist, and the light at collector, base stage and emitter
Carve development and expose table top, metal is precipitated at the same time at each table top.
The operation principle of High Speed Modulation light emitting diode 1 provided by the invention is：On the basis of HBT, using from transmitting
More sons that area is injected into the few son and base of base are for composite luminous, then in the first p-type indium gallium nitrogen layer 116 and the 2nd P
The centre of type indium gallium nitrogen layer 118 is mingled with the quantum well layer 117 so that the carrier getted over to base compound hair in Quantum Well
Light, is then swept away without being in time for compound carrier under the electric field that the collector 13 is formed with the base stage 15,
Leave behind the carrier of quick recombination luminescence.
The carrier lifetime τ of base radiation recombinationB≈WB/ 2D, wherein WBFor base thickness, D is expansion of the carrier in base
Dissipate constant.Theoretical calculation understands τBOnly less than 100 picoseconds of magnitude so that the modulation width of luminescent device is up to GHz amounts
Level.Among actual device operation, (i.e. E is emitter to only EB knots, and B is base stage, and space electricity is formed in their interface
He Qu is known as EB knots) it is positively biased, (i.e. B is base stage to BC knots, and C is collector, and forming space-charge region in their interface claims
Tied for BC) it is connected under same potential, tie zero bias equivalent to BC.When device input signal, since EB knots are positively biased, so meeting
There are a large amount of electronics to flow to the base stage 15, and in base with and the hole current recombination luminescence from the base stage 15；At the same time
Since the BC knots of zero bias are so that in the not few sub accumulation in BC interfaces, can to inject from the emitter 17 and without next
And flow directly into the diffusion electricity that the emitter 17 thus greatly reduces device with the carrier of hole current recombination luminescence
Hold, the reduction of diffusion capacitance is conducive to the upper limiting frequency of lifting response, increases modulation width.
High Speed Modulation light emitting diode 1 provided by the invention and its manufacture method have the advantages that：
First, by setting 117 carrier of quantum well layer recombination luminescence in Quantum Well, response frequency is increased.
2nd, by setting the first p-type indium gallium nitrogen layer 116 and the centre of the second p-type indium gallium nitrogen layer 118 to be mingled with the amount
117 structure of sublayer, can improve recombination rate, lift bandwidth；Without being in time for compound carrier in the collector 13
Swept away under the electric field formed with the base stage 15.
3rd, since the BC of zero bias is tied so that in the not few sub accumulation in BC interfaces so that injected simultaneously from the emitter 17
And it is not in time for flowing directly into the emitter 17 with the carrier of hole current recombination luminescence and thus greatly reduces device
Diffusion capacitance, the reduction of diffusion capacitance is conducive to the upper limiting frequency of lifting response.
The foregoing is merely the embodiment of the present invention, is not intended to limit the scope of the invention, every to utilize this hair
The equivalent structure or equivalent flow shift that bright specification and accompanying drawing content are made, is directly or indirectly used in other relevant skills
Art field, is included within the scope of the present invention.
Claims (9)
- A kind of 1. High Speed Modulation light emitting diode, it is characterised in that including light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit Including substrate, epitaxial light emission structure, collector, base stage and emitter, the epitaxial light emission structure includes folding the buffering set successively Layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer, quantum Well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride contact layer and conductive layer, the buffer stack are arranged on In the epitaxial growth plane of the substrate, the quantum well layer is undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers and heavy Four cycle concentration of product are 5 × 1017cm-3Silicon doping potential barrier indium gallium nitrogen/gallium nitride quantum well layer in any one, it is described Collector is arranged on the first n type gallium nitride contact layer, and the base stage is arranged on the second p-type indium gallium nitrogen layer, the emitter Arranged on the conductive layer.
- 2. High Speed Modulation light emitting diode according to claim 1, it is characterised in that the first p-type indium gallium nitrogen layer and The second p-type indium gallium nitrogen layer is heavily doped p-type In0.05Ga0.95N base stages, material, which is attached most importance to, adulterates the indium gallium nitrogen of magnesium addition, mixes Miscellaneous concentration is 3 × 1019cm-3。
- 3. High Speed Modulation light emitting diode according to claim 1, it is characterised in that the material of the substrate is blue precious Stone, the material of the cushion, the gallium nitride depletion layer and the n type gallium nitride layer are unintentional doped gallium nitride, institute The material for stating the first n type gallium nitride contact layer and the second n type gallium nitride contact layer is the gallium nitride of heavily doped silicon impurity, Doping concentration is 3 × 1017cm-3, the material of the p-type aluminum gallium nitride electronic barrier layer is Al0.15Ga0.85N, the conductive layer are oxygen Change indium tin transparency conducting layer.
- 4. High Speed Modulation light emitting diode according to claim 1, it is characterised in that the first n type gallium nitride contact Layer includes the collector contact table top arranged on its surface, and the base stage that the second p-type indium gallium nitrogen layer includes arranged on its surface contacts Table top.
- 5. High Speed Modulation light emitting diode according to claim 4, it is characterised in that the collector is arranged on the current collection Pole contacts table top, and the base stage is arranged on base stage contact table top.
- A kind of 6. manufacture method of the High Speed Modulation light emitting diode as described in any in 1-5 such as claim, it is characterised in that bag Include following steps：Step 1: providing substrate, substrate is formed in the epitaxial growth plane growth epitaxial light emission structure of the substrate, wherein the hair Light epitaxial structure includes folding cushion, the first n type gallium nitride contact layer, gallium nitride depletion layer, the p-type aluminum gallium nitride electronics set successively Barrier layer, the first p-type indium gallium nitrogen layer, quantum well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the contact of the second n type gallium nitride Layer and conductive layer, the buffer stack are arranged in the epitaxial growth plane of the substrate, and the quantum well layer is undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers and four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier indium gallium nitrogen/ Any one in gallium nitride quantum well layer；Step 2: by the substrate with epitaxial light emission structure prepared in etch process processing step one, pass through lithographic technique shape Into base stage contact table top, collector contact table top, then by the way that Ohm contact electrode is deposited, base stage, collector and emitter are set, High Speed Modulation light emitting diode is made.
- 7. the manufacture method of High Speed Modulation light emitting diode according to claim 6, it is characterised in that the step 1 tool Body comprises the following steps：Grown buffer layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronic blocking successively on substrate Layer, the first p-type indium gallium nitrogen layer, undoped In0.2Ga0.8N/In0.05Ga0.95N quantum well layers, the second p-type indium gallium nitrogen layer, N-type nitrogen Change gallium layer, the second n type gallium nitride contact layer and conductive layer, after epitaxial process, 700 degrees Celsius are carried out to epitaxial structure High-temperature annealing activation p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer and the second p-type indium gallium nitrogen layer.
- 8. the manufacture method of High Speed Modulation light emitting diode according to claim 6, it is characterised in that the step 1 tool Body comprises the following steps：Grown buffer layer, the first n type gallium nitride contact layer, gallium nitride depletion layer, p-type aluminum gallium nitride electronic blocking successively on substrate Layer, the first p-type indium gallium nitrogen layer, four cycle concentration of deposition are 5 × 1017cm-3Silicon doping potential barrier InGaN/gallium nitride amount Sub- well layer, the second p-type indium gallium nitrogen layer, n type gallium nitride layer, the second n type gallium nitride contact layer and conductive layer, epitaxial process knot Shu Hou, carries out epitaxial structure 700 degrees Celsius of high-temperature annealing activation p-type aluminum gallium nitride electronic barrier layer, the first p-type indium gallium nitrogen layer With the second p-type indium gallium nitrogen layer.
- 9. the manufacture method of High Speed Modulation light emitting diode according to claim 6, it is characterised in that the step 2 tool Body comprises the following steps：Collector contact table top is formed by etching technics：The substrate handled in step 1 coating positive photoresist is formed into mask plate, then the mask plate is subjected to first time photoetching, is gone Glue forms the figure to be carved, technique is then performed etching, to form collector contact table top；Base electrode is formed by etching technics and contacts table top：The substrate coating positive photoresist that previous step is handled forms mask plate, then the mask plate is carried out second of photoetching, goes Glue forms the figure to be carved, then performs etching technique, to form base stage contact table top；Previous step processing is formed into spin coating photoresist on the substrate of collector contact table top and base stage contact table top, is exposed after exposure Emitter contacts table top, Ohm contact electrode is deposited, on surface of the conductive layer away from the second n type gallium nitride contact layer Emitter is formed, base stage is formed on surface of the second p-type indium gallium nitrogen layer away from institute's quantum well layer, in the first N-type nitrogen Change surface of the gallium contact layer away from the cushion and form collector, then smear photoresist, and in collector, base stage and emitter Place's photoetching development exposes table top, and metal is precipitated at the same time at each table top.
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