CN105633108A - Multi-camera module and assembling method therefor - Google Patents

Multi-camera module and assembling method therefor Download PDF

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Publication number
CN105633108A
CN105633108A CN201510915243.2A CN201510915243A CN105633108A CN 105633108 A CN105633108 A CN 105633108A CN 201510915243 A CN201510915243 A CN 201510915243A CN 105633108 A CN105633108 A CN 105633108A
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Prior art keywords
image sensor
plain conductor
sensor chip
circuit board
cam module
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Granted
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CN201510915243.2A
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CN105633108B (en
Inventor
赵立新
侯欣楠
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Galaxycore Shanghai Ltd Corp
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Galaxycore Shanghai Ltd Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention provides an assembling method for a multi-camera module. The assembling method comprises the steps of providing multiple image sensor chips with suspending metal wires, wherein the first end of each metal wire is arranged on a bonding pad of each image sensor chip in a bonding manner, while the second end of each metal wire is suspended on each image sensor chip; providing a lens cone framework, wherein the lens cone framework adopts an integral structure and is suitable for assembling multiple groups of lens modules and the multiple image sensor chips; and assembling the multiple image sensor chips and the lens cone framework into standard components, and assembling the standard components and circuit boards into the multi-camera module through the second ends of the metal wires.

Description

Multi-cam module and assembly method thereof
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to the assembly method of a kind of multi-cam module.
Background technology
At present, the method for packing of the imageing sensor (CIS:CMOSImageSensor) of main flow includes: integration packaging (ChipOnBoard, COB) and Flip-Chip Using (FlipChip, FC) on wafer-level package (ChipScalePackage, CSP), plate.
CISCSP is the encapsulation technology that one is commonly utilized in low and middle-end, low pixel (2M pixel or following) imageing sensor at present, can adopt Dielevel(chip-scale) or Waferlevel(wafer scale) encapsulation technology. This encapsulation technology generally uses wafer scale glass and wafer bonding and uses cofferdam to separate between the image sensor chip of wafer, then the T-shaped metal contact chip scale packaging techniques of pad side after the welding disking area of wafer after grinding connects by making bond pad surface or endoporus side, pad face ring metal silicon puncturing technique (TSV:ThroughSiliconVia) or cutting, and after wafer rear extended link, make solder ball grid array (BGA:BallGridArray), then form the image sensor cell of single sealing cavity after cutting. Rear end forms module assembled structure by the method for SMT. But, CSP encapsulation has problem will be apparent below: 1 affects properties of product: the performance tool of imageing sensor especially small pixel size product is had a great impact by thick support glass by the absorption of light, refraction, reflection and scattering; 2 integrity problems: the thermal expansion coefficient difference between component in encapsulating structure and seal the gas SMT technique below in cavity or product uses in the change of environment and integrity problem occurs; 3 scales of investment are big, environment pollution control requires big, and the production cycle is longer, and unit chip is relatively costly particularly with high pixel large-size images product sensor.
CISCOB encapsulation is the DieLevel(chip-scale that one is commonly utilized in pixel product high-end, high (5M pixel or more than) imageing sensor at present) encapsulation technology. This encapsulation technology uses bond wire wire the chip back bonding after ground cutting on the pad of pcb board, loads onto the support and camera lens with IR sheet glass, is formed and assembles modular structure. But, COB encapsulates problem will be apparent below: 1, micronic dust controls extremely difficult, it is necessary to the proper clean room grade of superelevation, manufactures and maintains cost height; 2, product design customization, cycle length, flexibility ratio are inadequate; 3 are not easy large-scale production;
The DieLevel(chip-scale of pixel high-end, high that CISFC encapsulation is risen recently (5M pixel or more than) imageing sensor) encapsulation technology. This encapsulation technology is directly attached the chip bonding pad carrying out the gold element ground cutting of projection at pad by the disposable all contact tabs of effect that heat is ultrasonic with the pad of PCB with pad, forms encapsulating structure. Rear end adopts the method for SMT to form module assembled structure by the pad outside PCB or stannum ball. But, FC encapsulates problem will be apparent below: PCB substrate is required significantly high by 1 this encapsulation, has close thermal coefficient of expansion with Si, costly; 2 to manufacture reliability difficulty very big, and the coherence request that the ultrasonic all projections of heat are connected with pad is very high, projection and pad Hard link, and ductility is bad; 3 micronic dusts control difficulty are big, process environments requires height, costly;
Additionally, the assembly method of conventional CIS module is:
Step 1, is welded on circuit board by image sensor chip, forms first parts;
Step 2, by camera lens module and sleeve module assembled, forms second parts;
First parts and second parts are assembled, thus forming a complete photographic head module by step 3.
The assembly method of this kind of photographic head module has the disadvantage that for photographic head module, need the accurate installation using high-accuracy installation equipment just can carry out above-mentioned steps 3, otherwise will have influence on the imaging effect of photographic head module, and then the product qualified rate of the photographic head module being assembled is not high; Photographic head module especially for high pixel, common installation equipment is used to be difficult to complete preferably the accurate installation of above-mentioned steps 3, the imaging effect making the photographic head module of high pixel is a greater impact, the image quality of become image is poor, and especially the image quality of image surrounding is substantially bad.
And, in the image sensor chip packaging technology adopting plain conductor bonding, generally first by image sensor chip die bond (such as adhering to) to keyset (flexible PCB), then bonding bonding wire is carried out, first end of plain conductor is connected on the pad of image sensor chip, second end is connected on keyset, it is achieved in the electrical connection of image sensor chip and keyset, then again the image sensor chip after encapsulation is connected on circuit board by the lead-in wire on keyset or stannum ball.
The configuration flexibility that existing wire bonding method easily causes after encapsulation is poor, and the follow-up assembly precision of photographic head module requires height, and the relative position of camera lens and image sensor chip is difficult to control to affect the performance of photographic head module; And owing to now methodical flow process is longer, packaging efficiency is relatively low, causes that the image sensor chip long period is exposed in air, it is necessary to detection repeatedly and cleaning, reduce yields, increase the cost of photographic head module. Especially, the image sensor chip that other techniques are attached is adopted for some plain conductor second ends, needing a kind of new bonding method and device, so that the first end of wire is connected to the pad of image sensor chip, the second end is suspended on outside image sensor chip.
Additionally, making rapid progress along with consumption electronic product, it is adaptable to the single camera of portable electron device is existing defects on part segments market, and focusing ability, dynamic equilibrium have been difficult in adapt to demand in any case. Portable electron device has occurred in that multi-cam module, multi-cam module has been supplied in the main photographic head of smart mobile phone, but the photosurface that can there is image sensor chip in the assembling of multi-cam module does not line up, the problem having height and misalignment angle, can bring an insurmountable difficult problem in follow-up imaging process.
In sum, the assembly method of new multi-cam module is need in the industry the problem of searching badly.
Summary of the invention
Based on considerations above, the present invention provides the assembly method of a kind of multi-cam module, including:
Thering is provided multiple image sensor chips with unsettled plain conductor, the first end of described plain conductor is bonded to the pad of described image sensor chip, and the second end is suspended on described image sensor chip;
Thering is provided lens barrel framework, described lens barrel framework is that an entirety is suitable to assemble many group camera lens modules and multiple image sensor chip;
With the assembling of lens barrel framework, the plurality of image sensor chip is formed standard component, and described standard component is formed multi-cam module with circuit board assembling by the second end then passing through described plain conductor.
Preferably, the photosurface alignment of the plurality of image sensor chip.
Preferably, described plain conductor forms elastic construction, and the second end of described plain conductor is lower than described image sensor chip lower surface 5 microns to 300 microns.
Preferably, in the testing electrical property process of described standard component, the elastic construction generation elastic deformation of described plain conductor is to provide contact pressure, and raising plain conductor is electrically connected performance with test device; In the assembling process of described standard component and circuit board, the elastic construction generation elastic deformation of described plain conductor is to provide contact pressure, and raising plain conductor is electrically connected performance with circuit board.
Preferably, the step of described standard component with circuit board assembling is included: by the pressing way of contact, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode, the second end of described plain conductor and described circuit board are electrically connected.
The present invention also provides for a kind of multi-cam module, it is characterised in that including:
Multiple image sensor chips, described image sensor chip is electrically connected unsettled plain conductor, and the first end of described plain conductor is bonded to the pad of described image sensor chip, and the second end is suspended on described image sensor chip;
Lens barrel framework, lens barrel framework is that an entirety is suitable to assemble many group camera lens modules and multiple image sensor chip, and described lens barrel framework forms standard component with the assembling of described image sensor chip; The photosurface of wherein said multiple image sensor chip is parallel respectively, without angle of inclination;
Circuit board, described circuit board and described standard component are electrically connected by the second end of described plain conductor.
Preferably, the plurality of image sensor chip photosurface alignment.
Preferably, described plain conductor forms the second end of elastic construction and described plain conductor lower than described image sensor chip lower surface 5 microns to 300 microns.
Preferably, the second end of described plain conductor is connected by the mode of the pressing way of contact, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode with described circuit board.
The assembly method of the multi-cam module of the present invention uses common installation equipment just can accurately multi-cam module be assembled, overcome the assembly method of multi-cam module in prior art and need to adopt the deficiency of high-precision installation equipment, the assembly method of the present invention is simple, it is prone to the focal plane adjusting image sensor chip to camera lens, it is prone to correct the gradient of camera lens and image sensor chip, with ensure multi-cam module assembled after optical property, the installation step of the present invention makes described proud photographic head module have high-quality imaging effect, photographic head module especially for high pixel, the image quality that can make its image surrounding significantly improves.
The present invention is by forming unsettled plain conductor by the chip of imageing sensor by bond wire wire, and further holistic lens barrel framework and multiple image sensor chips are assembled, free end and circuit board again through plain conductor are electrically connected, and plain conductor is elastic construction, elastic deformation can be there is, can better improve electric property, connect than the pad of traditional C/S P, BGA and scolding tin three SMT and have more process advantage; And lens barrel framework is that an entirety can assemble multiple image sensor chip, the photosurface alignment of multiple image sensor chips, improves the assembly precision of multi-cam module and the performance of module.
The present invention uses gold thread to be directly connected to chip and PCB substrate pad, and gold thread ductility is good, and environmental suitability is strong, of good reliability. The lens barrel framework of the present invention can form open architecture with image sensor chip, effective minimizing light veiling glare in photographic head module, it is provided that module performance.
By the forming method of this multiple image sensor module, can guarantee that the location between imageing sensor and assembly precision, it is to avoid not the lining up of imageing sensor photosurface, angular deviation, it is to avoid multiple image sensor module causes imaging performance to decline because of assembly precision.
Explanation by embodiment in detail below is become apparent from by various aspects of the invention.
Accompanying drawing explanation
Reading the following detailed description to non-limiting example by referring to accompanying drawing, the other features, objects and advantages of the present invention will become more apparent upon.
Fig. 1 is the schematic diagram of the image sensor chip with unsettled plain conductor according to the embodiment of the present invention;
Fig. 2 is the schematic diagram of the standard component according to the embodiment of the present invention;
Fig. 3 is the schematic diagram of the photographic head module according to the embodiment of the present invention;
Fig. 4 is the flow chart of the assembly method of the photographic head module according to the present invention.
In the drawings, running through different diagrams, same or similar accompanying drawing labelling represents same or analogous device (module) or step.
Detailed description of the invention
In the specific descriptions of following preferred embodiment, reference is constituted the accompanying drawing appended by a present invention part. Appended accompanying drawing has been illustrated by way of example and has been capable of specific embodiment. The embodiment of example is not intended as the limit all embodiments according to the present invention. It is appreciated that under the premise not necessarily departing from the scope of the present invention, it is possible to use other embodiments, it is also possible to carry out structural or logicality amendment. Therefore, following specific descriptions are also nonrestrictive, and the scope of the present invention is defined by the claims appended hereto.
In order to more clearly set forth the method for packing of the present invention, in the following embodiments, adopt glass as substrate. It will be appreciated to those of skill in the art that substrate can also be made up of other transparent material.
Fig. 1 is the schematic diagram of the image sensor chip with unsettled plain conductor according to the embodiment of the present invention; Fig. 2 is the schematic diagram of the standard component according to the embodiment of the present invention; Fig. 3 is the schematic diagram of the photographic head module according to the embodiment of the present invention; Fig. 4 is the flow chart of the assembly method of the photographic head module according to the embodiment of the present invention.
As shown in Figure 4, and please also refer to this method for packing of Fig. 1 to Fig. 3 and comprise the following steps:
S10: providing multiple image sensor chips 110 with unsettled plain conductor 120, the first end 121 of described plain conductor 120 is bonded to the pad 111 of described image sensor chip 110, and the second end 122 is suspended on described image sensor chip 110;
In this step, there are image sensing district 112 and the welding disking area 113 around image sensing district 112 in the front of image sensor chip 110, and welding disking area 113 includes some pads 111. In this step, the second end of plain conductor 120 is unsettled is not bonded mutually with any medium, and plain conductor is that gold thread, silver wire, copper cash etc. have good wire performance, and is elastic construction, active force in the second end 122 time can there is elastic deformation;
Please also refer to Fig. 2, step S20: provide lens barrel framework 131, described lens barrel framework 131 is that an entirety is suitable to assemble many group camera lens modules 132 and multiple image sensor chip 110;
Step S30: the plurality of image sensor chip 110 and lens barrel framework 131, camera lens module 132 are assembled formation standard component 200, described standard component 200 and circuit board 300 are assembled formation photographic head module 400 by the second end then passing through described plain conductor 120.
In this step, there is image sensor chip 110 and the lens barrel framework 131(installation frame of unsettled plain conductor) and it is positioned at the camera lens module 132 of lens barrel lower portion, the inner surface of lens barrel framework 131 also has step 1311 in one embodiment, step 1311 is arranged towards one end of image sensor chip 110 corresponding to camera lens 132, be suitable to assembling one base plate for packaging 140, base plate for packaging 140 is glass material, plastic material, and the surface of base plate for packaging 140 is coated with IR film or AR film; It is not provided with step 1311 and base plate for packaging 140 in another embodiment, directly covers IR film or AR film near the surface in image sensing district 112 at camera lens 132.
After the assembling completing standard component 200, by the second end 122 pressing way of contact of plain conductor, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode, standard component 200 and circuit board 300 assembled formation photographic head module 400.
Concrete, adopt the pressing way of contact then by the second end 122 and pad 310 good contact on circuit board 300 in the first embodiment, standard component 200 is fixed by the subregion of buckle or bonding mode and circuit board 300.
In a second embodiment, adopting rapid welding mode, concrete mode is: plate one layer of gold-tin alloy weld layer on the second end 122 of plain conductor or the pad 310 of circuit board 300, by local rapid welding, control the heat conduction of welding region, not affect the performance of lens assembly;
(1) the gold-plated ashbury metal mode of pad: S201 provides photographic head module, and described photographic head module includes thermally sensitive camera lens, and described photographic head module also includes the plain conductor being electrically connected with image sensor chip that one end is unsettled; S203 provides the circuit board with some pads; The pad of circuit board described in S205 attached solder layer in advance, carries out rapid welding to the pad of plain conductor free end Yu circuit board. Plain conductor is gold thread, and the diameter of gold thread is be more than or equal to 10 microns, and solder layer is tin layers, and by controlling the thickness of tin layers so that in follow-up quick local welding, gold thread and tin layers can form the gold-tin alloy weld layer that stable gold content is higher. In an other embodiment: the step of the pad of circuit board attached solder layer in advance also includes: S206 adopts typography and attached solder on the pad of circuit board, and Reflow Soldering forms solder layer. In another embodiment, the step of the pad of circuit board attached solder layer in advance also includes: S206 ' adopts solder wave process attached solder layer on the pad of circuit board. In one embodiment, the method for the thickness controlling tin layers includes: control the parameter of solder wave process so that tin thickness is less than gold thread diameter. In another embodiment, the method for the thickness controlling tin layers includes: adopting typography to adhere to tin cream on the pad of circuit board, Reflow Soldering forms tin layers, adopts air knife mode, suction gun to draw mode or soldering tip adherent fashion makes tin thickness less than carrying out thickness. Tin thickness is less than gold wire thickness, and gold-tin alloy, in welding process, has good material advantage, can reduce brilliant crisp, have good fluidity, and resistivity is low, the feature that heat conductivity is good. Rapid welding includes: pulse heat bond technology, laser welding process, ultrasonic thermocompression Welding, and rapid welding is local welding mode, and heated perimeter is less than the 1/2 of described photographic head module bottom area.
(2) the gold-plated ashbury metal mode of plain conductor the second end 122, S101 provides photographic head module, described photographic head module includes thermally sensitive camera lens, and described photographic head module also includes the plain conductor being electrically connected with image sensor chip that one end is unsettled; S103 provides the circuit board with some pads; The free end of plain conductor described in S105 attached solder layer in advance, carries out rapid welding to the pad of plain conductor free end Yu circuit board. Plain conductor is gold thread, and the diameter of gold thread is be more than or equal to 10 microns, and solder layer is tin layers, by controlling the thickness of tin layers, making in follow-up quick local welding, gold thread and tin layers can form the gold-tin alloy weld layer of stable gold content higher (Fu Jin), and wherein tin thickness is less than gold wire thickness, gold-tin alloy is in welding process, there is good material advantage, can reduce brilliant crisp, there is good fluidity, resistivity is low, the feature that heat conductivity is good. Rapid welding includes: pulse heat bond technology, laser welding process, ultrasonic thermocompression Welding, and rapid welding is local welding mode, and heated perimeter is less than the 1/2 of described photographic head module bottom area.
In the third embodiment, adopting conducting resinl bonding mode, the free end of concrete plain conductor adheres to conducting resinl in advance, and conducting resinl be that silver is starched in the present embodiment, the pad of plain conductor free end Yu circuit board is carried out solidification and is electrically connected. Due to silver slurry there is good cohesive, electric conductivity may be used for doing point electrode slurry, still has good performance according to controlled after hardening. Plain conductor is gold thread, and the diameter of gold thread is be more than or equal to 5 microns, and the thickness of silver slurry is 2 microns to 100 microns. Curing mode adopts the mode that heat cure or UV solidify to carry out. In the present embodiment, the composition of silver slurry is: epoxide-resin glue or UV glue, and the mixture of small silver strip, and the thickness of silver slurry is: 2 microns to 100 microns. Additionally can adopt: the pad of circuit board adheres to silver slurry in advance, the pad of plain conductor free end Yu circuit board is solidified and is electrically connected. Due to silver slurry there is good cohesive, electric conductivity may be used for doing point electrode slurry, still has good performance according to controlled after hardening. Plain conductor is gold thread, and the diameter of gold thread is be more than or equal to 5 microns, and the thickness of silver slurry is 2 microns to 100 microns. Curing mode adopts the mode that heat cure or UV solidify to carry out. In the present embodiment, the composition of silver slurry is: epoxide-resin glue or UV glue, and the mixture of small silver strip, and the thickness of silver slurry is: 2 microns to 100 microns. In the present embodiment, conducting resinl also can adopt other metal materials with electric conductivity.
In the fourth embodiment, non-conductive adhesive bonding mode can be adopted, but plain conductor the second end 122 need to have good electrical contact with the pad of circuit board.
After forming standard component 200, standard component 200 can also be tested, in the testing electrical property process of described standard component 200, the elastic construction generation elastic deformation of described plain conductor 120 is to provide contact pressure, owing to the second end 122 of plain conductor (refers to Fig. 1 lower than described image sensor chip 110 lower surface 5 microns to 300 microns, distance is for h), improving the switching performance of plain conductor 120 and test device (mark); And it is in that in the assembling process of described standard component 200 and circuit board 300, the elastic construction generation elastic deformation of described plain conductor 120 is to provide contact pressure, owing to the second end 122 of plain conductor (refers to Fig. 1 lower than described image sensor chip 110 lower surface 5 microns to 300 microns, distance is for h), improving the switching performance of plain conductor and circuit board. Refer to that dotted line 120 ' in Fig. 4, Fig. 4 shows when not assembling with circuit board 300 for standard component 200, the first shape state of plain conductor 120; Solid line 120 ' ' what show is after standard component 200 has assembled with circuit board 300, second shape state of plain conductor, now the second shape state generation elastic deformation of plain conductor, second end of plain conductor is more good with contacting of pad, being conducive to the transmission of signal, now the second end and contact pads area are be more than or equal to 0.01 square millimeter.
The present invention also provides for a kind of multi-cam module, including: multiple image sensor chips, described image sensor chip is electrically connected unsettled plain conductor, first end of described plain conductor is bonded to the pad of described image sensor chip, and the second end is suspended on described image sensor chip; Lens barrel framework, lens barrel framework is that an entirety is suitable to assemble many group camera lens modules and multiple image sensor chip, and described lens barrel framework forms standard component with the assembling of described image sensor chip; The photosurface of wherein said multiple image sensor chip is parallel respectively, without angle of inclination; Circuit board, described circuit board and described standard component are electrically connected by the second end of described plain conductor.
The plurality of image sensor chip photosurface aligns. Described plain conductor forms the second end of elastic construction and described plain conductor lower than described image sensor chip lower surface 5 microns to 300 microns. Second end of plain conductor is connected by the mode of the pressing way of contact, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode with described circuit board.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when without departing substantially from the spirit of the present invention or basic feature, it is possible to realize the present invention in other specific forms. Therefore, in any case, embodiment all should be regarded as exemplary, and be nonrestrictive. Additionally, it will be evident that " including " word is not excluded for other elements and step, and wording " one " is not excluded for plural number. In device claim, multiple elements of statement can also be realized by an element. The first, the second word such as grade is used for representing title, and is not offered as any specific order.

Claims (9)

1. the assembly method of a multi-cam module, it is characterised in that comprise the following steps:
Thering is provided multiple image sensor chips with unsettled plain conductor, the first end of described plain conductor is bonded to the pad of described image sensor chip, and the second end is suspended on described image sensor chip;
Thering is provided lens barrel framework, described lens barrel framework is that an entirety is suitable to assemble many group camera lens modules and multiple image sensor chip;
With the assembling of lens barrel framework, the plurality of image sensor chip is formed standard component, and described standard component is formed multi-cam module with circuit board assembling by the second end then passing through described plain conductor.
2. the assembly method of multi-cam module as claimed in claim 1, it is characterised in that the photosurface alignment of the plurality of image sensor chip.
3. the assembly method of multi-cam module as claimed in claim 1, it is characterised in that described plain conductor forms elastic construction, and the second end of described plain conductor is lower than described image sensor chip lower surface 5 microns to 300 microns.
4. the assembly method of multi-cam module as claimed in claim 3, it is characterized in that, in the testing electrical property process of described standard component, the elastic construction generation elastic deformation of described plain conductor is to provide contact pressure, and raising plain conductor is electrically connected performance with test device; In the assembling process of described standard component and circuit board, the elastic construction generation elastic deformation of described plain conductor is to provide contact pressure, and raising plain conductor is electrically connected performance with circuit board.
5. the assembly method of multi-cam module as claimed in claim 1, it is characterized in that, the step of described standard component with circuit board assembling is included: by the pressing way of contact, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode, the second end of described plain conductor and described circuit board are electrically connected.
6. a multi-cam module, it is characterised in that including:
Multiple image sensor chips, described image sensor chip is electrically connected unsettled plain conductor, and the first end of described plain conductor is bonded to the pad of described image sensor chip, and the second end is suspended on described image sensor chip;
Lens barrel framework, lens barrel framework is that an entirety is suitable to assemble many group camera lens modules and multiple image sensor chip, and described lens barrel framework forms standard component with the assembling of described image sensor chip; The photosurface of wherein said multiple image sensor chip is parallel respectively, without angle of inclination;
Circuit board, described circuit board and described standard component are electrically connected by the second end of described plain conductor.
7. multi-cam module as claimed in claim 6, it is characterised in that the plurality of image sensor chip photosurface aligns.
8. multi-cam module as claimed in claim 6, it is characterised in that described plain conductor forms the second end of elastic construction and described plain conductor lower than described image sensor chip lower surface 5 microns to 300 microns.
9. multi-cam module as claimed in claim 6, it is characterised in that the second end of described plain conductor is connected by the mode of the pressing way of contact, rapid welding mode, conducting resinl bonding mode or non-conductive adhesive bonding mode with described circuit board.
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CN107301988A (en) * 2017-05-27 2017-10-27 格科微电子（上海）有限公司 Camera module and its assembly method
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