CN105629677A - Higher-order wave aberration detection mark and detection method of photoetching projection objective lens - Google Patents
Higher-order wave aberration detection mark and detection method of photoetching projection objective lens Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
Abstract
The invention relates to a higher-order wave aberration detection mark and detection method of a photoetching projection objective lens. One-dimensional graphs with different directions and same size are adopted as a detection mark; a space image of the detection mark is simulated, principal component analysis and multiple linear regression analysis are carried out on a simulation space image set, and a higher-order wave aberration sensitive detection model of the projection objective lens of a large-numerical aperture photoetching machine is built; and an actually-measured space image of the detection mark is acquired, and the detection model is used for fitting the actually-measure space image to obtain wave aberration of the photoetching projection objective lens. By the detection mark and the detection method, the high-order wave aberration sensitive detection model is built, high-accuracy detection on zernike aberration Z5-Z64 of the projection objective lens of the large-numerical aperture photoetching machine is achieved, and the detection mark and the detection method have the advantages of fast detection speed, high accuracy and no need of extra hardware cost.
Description
Technical field
The present invention relates to projection lens of lithography machine, particularly a kind of photoetching projection objective lens high-rank wavefront aberration detection labelling and detection method.
Background technology
Litho machine is one of nucleus equipment of great scale integrated circuit manufacture. Projection objective is one of most important subsystem of litho machine. The wave aberration of projection objective is the principal element affecting litho machine alignment precision and imaging resolution. Along with photoetching technique is developed to immersion from dry type, high-rank wavefront aberration (is mainly Z38��Z64) impact become gradually can not ignore, the tolerance for aberration of projection lens of lithography machine becomes more and more harsh, therefore, to wave aberration detection required precision also more and more higher. In order to meet the requirements such as litho machine alignment precision and imaging resolution, research and develop a kind of high-precision large-numerical aperture photoetching projection objective lens high-rank wavefront aberration detection technique significant.
At present, the main flow detection technique of large-numerical aperture photoetching projection objective lens high-rank wavefront aberration is based on the wave aberration detection technique of pupil planar survey. 2011, ASML company proposes a kind of wave aberration detection technique based on pupil planar survey (referring in first technology 1, F.Staals, A.Andryzhyieuskaya, H.Bakker, M.Beems, J.Finders, T.Hollink, J.Mulkens, A.Nachtwein, R.Willekers, P.Engblom, T.GrunerandY.Zhang, " Advancedwavefrontengineeringforimprovedimagingandoverlay applicationsona1.35NAimmersionscanner ", Proc.SPIE7973,79731G (2011)). This technology achieves the detection of 64 rank zernike coefficients by integration of compact interferometer, and its accuracy of detection is high, but integrated difficulty is big, it is necessary to extra hardware cost.
The wave aberration of photoetching projection objective detection technique measured based on aerial image is also a common class technology, has accuracy of detection height, speed is fast, cost is low, the advantage that can detect wave aberration of photoetching projection objective in real time. 2015, all bohrs et al. propose a kind of large-numerical aperture wave aberration of photo-etching machine projection objective detection method (referring in first technology 2, all bohrs, Li Sikun, Wang Xiangchao, Yan Guanyong, Shen Lina, Wang Lei, " a kind of large-numerical aperture wave aberration of photo-etching machine projection objective detection method ", number of patent application: 201510166998.7, publication number: 104777718A). The method adopts Box-BehnkenDesign statistical sampling methods, uses polarized illumination and vector imaging model, establishes the detection model matched with large-numerical aperture litho machine, it is achieved that the measurement (Z of 33 rank Zernike polynomials fitting5��Z37), but owing to detecting the restriction of labelling, detection model is relatively low to the sensitivity of high-rank wavefront aberration, it is impossible to realize the high precision test of large-numerical aperture projection lens of lithography machine high-rank wavefront aberration.
Summary of the invention
It is an object of the invention to provide a kind of photoetching projection objective lens high-rank wavefront aberration detection labelling and detection method, adopt this detection labelling can detect the high-rank wavefront aberration of large-numerical aperture projection lens of lithography machine accurately.
The technical solution of the present invention is as follows:
A kind of photoetching projection objective lens high-rank wavefront aberration detection labelling, by eight different directions orientations, equivalently-sized one-dimensional pattern is constituted, and described direction orientation is different, and equivalently-sized figure has the feature that
1) the direction orientation of one-dimensional pattern comprises 0 ��, 30 ��, 45 ��, 60 ��, 90 ��, 120 ��, 135 �� and 150 �� of eight directions.
2) to be isolated transmission empty for the one-dimensional pattern in all directions orientation, and the empty width of transmission is minimum for the 1/2 of photo-etching machine exposal wavelength, maximum less than photo-etching machine exposal wavelength 10 times; The cycle of detection labelling is less than 50 times of photo-etching machine exposal wavelength; Described width and cycle are all silicon face width.
A kind of photoetching projection objective lens high-rank wavefront aberration detection method utilizing above-mentioned detection labelling, the measurement system that the method adopts include for produce the light source of laser beam, illuminator, for bearing test mask and have precise positioning ability mask platform, for the projection objective system that the detection labelling on mask graph is imaged onto on silicon chip, silicon chip can be carried and there is 3-D scanning ability and the work stage of precise positioning ability, the aerial image sensor being arranged in this work stage and the data handling machine being connected with aerial image sensor.
Described lighting system can be traditional lighting, ring illumination, two pole illuminations, quadrupole illuminating and free lighting source, and the partial coherence factor of conventional illumination sources is ��; The partial coherence factor of ring illumination light source is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresent internal coherence factor; The partial coherence factor of two pole illuminations is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresenting internal coherence factor, pole subtended angle is ��; The partial coherence factor of quadrupole illuminating is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresenting internal coherence factor, pole subtended angle is ��.
Described illuminator is for adjusting light distribution and the polarization state of the illumination light field that described light source produces.
The method comprises the steps:
1) establishment that simulation space image set closes
Box-BehnkenDesign statistical sampling methods is adopted to set 60 rank Zernike polynomials fitting Z5��Z64Combination ZU, and set one group of Polarization aberration PT at random; Select lithography simulation parameter: the lighting system of illuminator and partial coherence factor thereof, photo-etching machine exposal wavelength X, the numerical aperture NA of projection objective, set the span of NA as NA >=0.93; Mask platform is placed detection labelling; Aerial image acquisition range: X-direction acquisition range is [-L, L], sets the span of L as 300nm��L��3000nm, and Z-direction acquisition range is [-F, F], sets the span of F as 2000nm��F��6000nm; Aerial image collection is counted: X-direction collection is counted as M, sets the span of M as M >=20, and Z-direction collection is counted as N, sets the span of N as N >=13; Above-mentioned parameter and Zernike polynomials fitting are combined ZU and inputs computer, use the vector imaging formula that formula is 1. shown, adopt lithography simulation software to emulate, obtain simulation space image set and close AIU.
��
Wherein, nimageFor the refractive index of image space,For normalized efficient light sources intensity distributions,For pupil function,For the diffraction spectra of mask,It is the transmission matrix of 3 �� 2, E0For the Jones vector of incident illumination,*Represent conjugate transpose,With WithRespectively normalized image coordinates, pupil plane coordinate, normalization formula is as follows:
Wherein, NA is the numerical aperture of projection objective, and �� is photo-etching machine exposal wavelength, x and y, f and g respectively image coordinates, pupil plane coordinate.
2) demarcation of linear regression matrix
Simulation space image set being closed AIU and carries out principal component analysis, obtain the main constituent of simulation space picture and corresponding main constituent coefficient, formula is as follows:
AIU=PC V is 3.
Wherein, PC is the main constituent that simulation space image set closes, and V is corresponding main constituent coefficient.
Described main constituent coefficient V and described Zernike polynomials fitting being combined ZU as given data, adopts least square fitting method to calculate linear regression matrix RM, formula is as follows:
V=ZU RM is 4.
3) collection of aerial image is surveyed
Litho machine to be detected is carried out parameter setting, parameter and step 1) identical.
Start litho machine, the illumination light that light source sends obtains and step 1 after illuminator adjustment) corresponding lighting system, it is irradiated to the detection labelling in mask platform, utilize the aerial image that multi-direction detection labelling that aerial image sensor measurement converges through projection objective is corresponding, obtain actual measurement aerial image, and input described computer stored.
4) the solving of Zernike polynomials fitting
Utilize computer that actual measurement aerial image is carried out main constituent matching, obtain the main constituent coefficient of actual measurement aerial image, be then fitted according to method of least square with described linear regression matrix RM, obtain the Zernike polynomials fitting of surveyed projection lens of lithography machine.
With compared with first technology, the invention have the advantages that
The present invention passes through the isolated transmission null set adopting eight directions as detection labelling so that the aerial image of detection labelling is more sensitive to the high-rank wavefront aberration of large-numerical aperture projection lens of lithography machine. Present invention achieves the Zernike polynomials fitting Z of large-numerical aperture projection lens of lithography machine5��Z64High precision test, there is detection speed fast, precision is high, it is not necessary to the advantage increasing additional hardware cost.
Accompanying drawing explanation
Fig. 1 photoetching projection objective lens high-rank wavefront aberration detection mark structure schematic diagram of the present invention.
Fig. 2 detection system construction drawing of the present invention.
Fig. 3 lighting system schematic diagram of the present invention, wherein, (a) is the structure of lighting system, and (b) is the polarization state of illumination light.
Fig. 4 uses the large-numerical aperture projection lens of lithography machine high-rank wavefront aberration precision figure that present invention measurement obtains.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this embodiment.
Fig. 1 is the schematic diagram of the photoetching projection objective lens high-rank wavefront aberration detection labelling that the present invention adopts. The detection labelling of the present embodiment is made up of the isolated transmission sky in eight direction orientations, and eight direction orientations comprise 0 ��, 30 ��, 45 ��, 60 ��, 90 ��, 120 ��, 135 �� and 150 ��. The width of transmission sky is 250nm, and the cycle of detection labelling is 3000nm.
Fig. 2 is the detection system structure schematic diagram that the present invention adopts. Produce the light source 1 of laser beam, illuminator 2, for bearing test mask 3 and have precise positioning ability mask platform 4, for the projection objective system 6 that the detection labelling 5 on mask graph is imaged onto on silicon chip, silicon chip can be carried and there is 3-D scanning ability and the work stage 7 of precise positioning ability, the aerial image sensor 8 being arranged in this work stage 7 and the data handling machine 9 being connected with aerial image sensor 8.
The method comprises the steps:
1) establishment that simulation space image set closes
Box-BehnkenDesign statistical sampling mode is adopted to set the 32 rank Zernike polynomials fitting Z of [-0.02 ��, 0.02 ��] amplitude range5��Z36The 28 rank Zernike polynomials fitting Z of [-0.01 ��, 0.01 ��] amplitude range37��Z64Combination ZU and set the Polarization aberration PT of one group of large-numerical aperture projection lens of lithography machine at random; Selected lithography simulation parameter: the lighting system of illuminator chooses ring illumination, and its partial coherence factor is [��out,��in]=[0.9,0.7], the polarization state of illumination light chooses line polarized light, and the direction of vibration of this line polarized light light vector is parallel with X-direction, as it is shown on figure 3, photo-etching machine exposal wavelength X=193nm, the numerical aperture NA=1.35 of projection objective; Mask platform is placed detection labelling; Aerial image acquisition range: X-direction acquisition range is [-900nm, 900nm], Z-direction acquisition range is [-2000nm, 2000nm]; Aerial image collection is counted: it is 61 that X-direction collection is counted, and it is 57 that Z-direction collection is counted; Above-mentioned parameter is designed and Zernike polynomials fitting combination ZU inputs computer, use the vector imaging formula that formula is 1. shown, adopt lithography simulation software to emulate, obtain simulation space image set and close AIU.
��
Wherein, nimageFor the refractive index of image space,For normalized efficient light sources intensity distributions,For pupil function,For the diffraction spectra of mask,It is the transmission matrix of 3 �� 2, E0For the Jones vector of incident illumination,*Represent conjugate transpose,With WithRespectively normalized image coordinates, pupil plane coordinate, normalization formula is as follows:
Wherein, NA is the numerical aperture of projection objective, and �� is photo-etching machine exposal wavelength, x and y, f and g respectively image coordinates, pupil plane coordinate.
2) demarcation of linear regression matrix
Simulation space image set being closed AIU and carries out principal component analysis, obtain the main constituent of simulation space picture and corresponding main constituent coefficient, formula is as follows:
3. wherein, PC is the main constituent that simulation space image set closes to AIU=PC V, and V is corresponding main constituent coefficient.
Described main constituent coefficient V and described Zernike polynomials fitting being combined ZU as given data, adopts least square fitting method to calculate linear regression matrix RM, formula is as follows:
V=ZU RM is 4.
3) collection of aerial image is surveyed
Litho machine to be detected is carried out parameter setting, parameter and step 1) identical;
Start litho machine, the illumination light that light source sends obtains and step 1 after illuminator adjustment) corresponding lighting system, it is irradiated to the detection labelling in mask platform, utilize the aerial image that multi-direction detection labelling that aerial image sensor measurement converges through projection objective is corresponding, obtain actual measurement aerial image, and input described computer stored.
4) the solving of Zernike polynomials fitting
Utilize computer that actual measurement aerial image is carried out main constituent matching, obtain the main constituent coefficient of actual measurement aerial image, be then fitted according to method of least square with described linear regression matrix RM, obtain the Zernike polynomials fitting of surveyed projection lens of lithography machine, as shown in Figure 4. The mean error of the Zernike polynomials fitting that detection obtains and standard deviation are all at below 0.085nm.
Relative in first technology, this method passes through the isolated transmission null set adopting eight directions as detection labelling, the aerial image making detection labelling is more sensitive to the high-rank wavefront aberration of large-numerical aperture projection lens of lithography machine, it is achieved that the Zernike polynomials fitting Z of large-numerical aperture projection lens of lithography machine5��Z64High precision test, there is detection speed fast, precision is high, it is not necessary to the advantage increasing additional hardware cost.
Principle that embodiment of above is intended to be merely illustrative of the present and the illustrative embodiments that adopts, but the invention is not limited in this. For those skilled in the art; without departing from the spirit and substance in the present invention; can making various modification and improvement, therefore all equivalent technical schemes fall within scope of the invention, and the scope of patent protection of the present invention should be defined by the claims.
Claims (6)
1. a photoetching projection objective lens high-rank wavefront aberration detection labelling, it is characterised in that described detection labelling is different by direction orientation, and equivalently-sized one-dimensional pattern is constituted:
1) the one-dimensional pattern direction orientation described in comprises 0 ��, 30 ��, 45 ��, 60 ��, 90 ��, 120 ��, 135 �� and 150 �� of eight directions;
2) to be isolated transmission empty for the one-dimensional pattern in all directions orientation, and the empty width of transmission is minimum for the 1/2 of photo-etching machine exposal wavelength, maximum less than photo-etching machine exposal wavelength 10 times; The cycle of detection labelling is less than 50 times of photo-etching machine exposal wavelength; Described width and cycle are all silicon face width.
2. utilize the photoetching projection objective lens high-rank wavefront aberration detection method detecting labelling described in claim 1, the measurement system that the method adopts includes the light source (1) for producing laser beam, illuminator (2), for bearing test mask (3) the mask platform (4) having precise positioning ability, for the detection labelling (5) on mask graph being imaged onto the projection objective system (6) on silicon chip, silicon chip can be carried and there is the work stage (7) of 3-D scanning ability and precise positioning ability, it is arranged on the aerial image sensor (8) in this work stage (7) and the data handling machine (9) being connected with aerial image sensor (8),
It is characterized in that, the method comprises the steps:
1) establishment that simulation space image set closes
Box-BehnkenDesign statistical sampling methods is adopted to set 60 rank Zernike polynomials fitting Z5��Z64Combination ZU, and set one group of Polarization aberration PT at random;
Select lithography simulation parameter: the lighting system of illuminator and partial coherence factor thereof, photo-etching machine exposal wavelength X, the numerical aperture NA of projection objective;
Mask platform is placed detection labelling; Installation space is as acquisition range: X-direction acquisition range is [-L, L], and Z-direction acquisition range is [-F, F]; Aerial image collection is counted: X-direction collection is counted as M, and Z-direction collection is counted as N;
Above-mentioned parameter and Zernike polynomials fitting are combined ZU and inputs computer, adopt lithography simulation software to emulate, obtain simulation space image set and close AIU;
2) demarcation of linear regression matrix
Simulation space image set being closed AIU and carries out principal component analysis, obtain the main constituent of simulation space picture and corresponding main constituent coefficient, formula is as follows:
AIU=PC V is 3.
Wherein, PC is the main constituent that simulation space image set closes, and V is corresponding main constituent coefficient;
Described main constituent coefficient V and described Zernike polynomials fitting being combined ZU as given data, adopts least square fitting method to calculate linear regression matrix RM, formula is as follows:
V=ZU RM is 4.
3) collection of aerial image is surveyed
Litho machine to be detected is carried out parameter setting, parameter and step 1) identical;
Start litho machine, the illumination light that light source sends obtains and step 1 after illuminator adjustment) corresponding lighting system, it is irradiated to the detection labelling in mask platform, utilize the aerial image that multi-direction detection labelling that aerial image sensor measurement converges through projection objective is corresponding, obtain actual measurement aerial image, and input described computer stored;
4) the solving of Zernike polynomials fitting
Utilize computer that actual measurement aerial image is carried out main constituent matching, obtain the main constituent coefficient of actual measurement aerial image, be then fitted according to method of least square with described linear regression matrix RM, obtain the Zernike polynomials fitting of surveyed projection lens of lithography machine.
3. photoetching projection objective lens high-rank wavefront aberration detection method according to claim 2, it is characterized in that, described lighting system is conventional illumination sources, ring illumination light source, two pole lighting sources, quadrupole illuminating light source or free lighting source, and the partial coherence factor of conventional illumination sources is ��; The partial coherence factor of ring illumination light source is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresent internal coherence factor; The partial coherence factor of two pole lighting sources is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresenting internal coherence factor, pole subtended angle is ��; The partial coherence factor of quadrupole illuminating light source is [��out,��in], ��outRepresent the externally coherent factor, ��inRepresenting internal coherence factor, pole subtended angle is ��;
Described illuminator is for adjusting light distribution and the polarization state of the illumination light field that described light source produces.
4. photoetching projection objective lens high-rank wavefront aberration detection method according to claim 2, it is characterised in that the polarization state of described polarization illumination is to polarize completely, partial polarization or completely unpolarized.
5. photoetching projection objective lens high-rank wavefront aberration detection method according to claim 2, it is characterised in that the span of described X-direction acquisition range L is 300nm��L��3000nm; The span of Z-direction acquisition range F is 2000nm��F��6000nm; The count span of M of X-direction collection is M >=20, and it is N >=13 that Z-direction gathers the span of points N.
6. photoetching projection objective lens high-rank wavefront aberration detection method according to claim 2, it is characterised in that numerical aperture NA >=0.93 of described projection objective.
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Application publication date: 20160601 |