CN102681358B - Space image detection-based projection objective wave aberration in-situ measurement method - Google Patents
Space image detection-based projection objective wave aberration in-situ measurement method Download PDFInfo
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Abstract
The invention relates to a space image detection-based projection objective wave aberration in-situ measurement method. By adopting the method, space image optical intensity distribution corresponding to mask marks with different orientation is measured by an image sensor arranged on a workpiece platform; and the projection objective wave aberration is obtained by calculating the calibrated sensitivity matrix. The sensitivity matrix can be calibrated by photoetching physical simulation software. Compared with the prior art, the method can be used for detecting the projection objective wave aberration more comprehensively.
Description
Technical field
The present invention relates to projection lens of lithography machine aberration, particularly a kind of projection objective wave aberration in-situ measuring method detecting based on aerial image.
Background technology
At integrated circuit, manufacture field, the projection imaging litho machine that the pattern on mask is transferred on silicon chip via imaging system is known.Projection objective system is one of crucial subsystem in litho machine.
Projection objective aberration is the key factor that affects image forming quality of photoetching machine.Projection objective wave aberration can be divided into strange aberration and idol poor.Wherein, strange aberration mainly comprise coma and three ripples poor, poor spherical aberration and the astigmatism of mainly comprising of idol.The graph position that strange aberration makes to be exposed on silicon chip changes, thereby causes overlay error.The optimal focal plane of the figure of idol official post exposure changes, thereby affects the resolution of litho machine.Along with constantly diminishing of lithographic feature size, the especially use of resolution enhance technology, projection objective aberration becomes more and more obvious to the impact of photoetching quality.Therefore,, for guaranteeing that alignment precision and the resolution of litho machine meets the demands, comprehensive, high-precision wave aberration detection technique is indispensable.
In former work, we have proposed a kind of wave aberration of photoetching projection objective detection technique based on aerial image principal component analysis (PCA) (referring to technology [1] formerly, Lifeng Duan, Xiangzhao Wang, Anatoly Y.Bourov, Bo Peng, and Peng Bu, " In situ aberration measurement technique based on principal component analysis ofaerial image; " Opt.Express 19,18080-18090 (2011)).Formerly technology adopts the test badge of level and vertical both direction, under a kind of light illumination mode, test badge forms aerial image through projection objective, utilize afterwards the transmission-type image-position sensor being positioned in work stage to obtain the aerial image light distribution of mask test badge under different lighting conditions, and according to the wave aberration of aerial image light intensity Inversion Calculation projection objective.Formerly technology for detection precision is high, and speed is fast; But because mask test badge only has both direction, can only be for detection of low order aberration Z
5, Z
7, Z
8, Z
9, Z
14, Z
15, Z
16, cannot detect high-order Ze Nike aberration more.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of projection objective wave aberration in-situ measuring method detecting based on aerial image.The mask label space that has different orientation by the imageing sensor measurement being arranged in work stage, as light distribution, can be used in and detects Z
5-Z
37totally 33 Ze Nike aberrations.
Technical solution of the present invention is as follows:
A kind of projection objective wave aberration in-situ measuring method detecting based on aerial image, the measuring system that the method adopts comprises the light source for generation of illuminating bundle, can adjust the illuminator of lighting system and illumination numerical aperture, for bearing test mask, also can realize pinpoint mask platform, for mask graph is imaged onto to the projection objective system on silicon chip, can scan work stage by pinpoint 6 DOF, be arranged on the aerial image sensor in sextuple scanning work stage and the data handling machine being connected with work stage, it is characterized in that this method comprises the following steps:
1. the foundation that simulation space image set closes:
Adopt traditional B ox-Behnken Design statistical sampling mode or other statistical sampling mode to set zernike coefficient Z
5～Z
37combination ZM.The parameter of selected litho machine: the lighting system of illuminator and partial coherence factor thereof, the use wavelength of litho machine laser instrument is λ, the numerical aperture NA of projection objective, arrangement test mask in mask platform, test badge on this test mask is that isolated lines combine or isolate idle pattern, and this combination comprises m isolated lines or isolate sky and each isolated lines or isolated sky to have different direction orientations.A described m isolated lines or isolated empty different directions are oriented to 0 °, and 180 °/N, 2 * 180 °/N, 3 * 180 °/N ..., (N-1) * 180 °/N, 180 ° are total to N+1 any m direction in direction orientation, and wherein m and N are positive integer and the m≤N that is more than or equal to 6; Aerial image acquisition range: directions X acquisition range is [L, L], Z direction acquisition range is [F, F]; Aerial image sampling number: directions X sampling number is M, it is N that Z direction gathers sampling number; By above-mentioned parameter design and zernike coefficient combination ZM input computing machine, adopt PROLITH or other lithography simulation software to carry out emulation, obtain simulation space image set and close AIM;
2. the demarcation of sensitivity matrix between aerial image characteristic coefficient and zernike coefficient:
Simulation space image set is closed to AIM and carry out traditional principal component analysis (PCA), obtain major component and the corresponding characteristic coefficient that can characterize aerial image.Simulation space image set is closed to AIM uses formula (1) to carry out traditional principal component analysis (PCA):
AIM＝PC·V (1)
Wherein, PC is the major component that simulation space image set that principal component analysis (PCA) obtains closes, and V represents the characteristic of correspondence coefficient that simulation space image set closes;
Described characteristic coefficient V and described zernike coefficient are combined to ZM as given data, adopt conventional least square fitting method to use formula (2) meter sensitivity matrix S:
V＝ZM·S (2)
Wherein, be the aerial image characteristic coefficient of demarcation and the sensitivity matrix between zernike coefficient.
3. start litho machine and gather aerial image:
Parameter to the projection objective of litho machine to be detected arranges, and parameter synchronization suddenly 1.; Start litho machine, the illumination light that light source sends obtains corresponding lighting system after illuminator adjustment, be irradiated to the test mask in mask platform, aerial image corresponding to multi-direction test badge that utilizes aerial image sensor measurement to converge through projection objective, after check measurement result is errorless, will surveys aerial image and input described computer stored;
4. solving of Ze Nike aberration:
Computing machine is to described actual measurement aerial image, according to conventional method, carry out major component matching, obtain surveying the characteristic coefficient of aerial image, the sensitivity matrix S that the characteristic coefficient of this actual measurement aerial image obtains in 2. with step, carry out according to a conventional method least square fitting, obtain the Ze Nike aberration of surveyed projection lens of lithography machine.
Described setting photo-etching machine illumination pattern comprises traditional lighting and off-axis illumination.
The span of described L is: 3000nm >=L >=450nm; The span of F is 5000nm >=F >=2000nm; The span of M is M >=20, and the span of N is N >=13.
Described light source comprises mercury lamp, 193nm LASER Light Source, 248nm LASER Light Source, 157nm LASER Light Source, EUV light source.
Described imageing sensor comprises CMOS, CCD or photodiode.
Described travelling workpiece platform is included in x, the interior movement of carrying out along any direction of y plane and movement in the z-direction.
Described projection objective is total transmissivity formula, total-reflection type and refraction-reflection type projection objective, and the numeric aperture values of projection objective is 0≤NA≤1.
Compare with technology formerly, the present invention has the following advantages:
The present invention proposes a kind of projection objective wave aberration in-situ measuring method detecting based on aerial image, by adopting multidirectional test mask mark, increased the sample information to projection objective pupil, can whole high-precision detection Ze Nike aberration Z
5-Z
37.
Accompanying drawing explanation
Fig. 1 projection objective wave aberration in-situ measuring method system construction drawing detecting based on aerial image of the present invention.
The structural representation of Fig. 2 mask mark of the present invention.
The projection objective wave aberration precision figure that Fig. 3 is used the present invention to measure.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this embodiment.
First refer to Fig. 1, Fig. 1 is the measuring system structural representation that the present invention adopts.Produce the light source 1 of illuminating bundle, for light source under adjusting, send the illuminator 2 of beam waist, light distribution, partial coherence factor and the lighting system of light beam, Deng enough bearing test masks 3, also can realize pinpoint mask platform 4, be used for the projection objective that mask graph is imaged onto on silicon chip and numerical aperture is adjustable 5, can scan work stage 6 and be arranged on the aerial image sensor 7 in sextuple scanning work stage, the data handling machine 8 being connected with work stage by pinpoint 6 DOF.
Concrete measuring process comprises following four steps:
1. the foundation that simulation space image set closes:
Adopt traditional B ox-Behnken Design statistical sampling mode to set zernike coefficient Z
5～Z
37combination ZM.The parameter of selected litho machine: the lighting system of illuminator is the ring illumination in off-axis illumination mode, and its partial coherence factor is [σ
outσ
in]=[0.68 0.44], the use wavelength of litho machine laser instrument is 193nm, the numerical aperture NA of projection objective is 0.75, arrangement test mask in mask platform, test badge on this test mask is isolated lines combination, and this combination comprises that 8 isolated lines and each isolated lines have different direction orientations.The different directions of 8 described isolated lines is oriented to 0 °, and 30 °, 45 °, 60 °, 90 °, 120 °, 135 °, 150 °, as shown in Figure 2; Aerial image acquisition range: directions X acquisition range is [900nm, 900nm], Z direction acquisition range is [3500nm, 3500nm]; Aerial image sampling number: directions X sampling number is that 61, Z direction collection sampling number is 57; By above-mentioned parameter design and zernike coefficient combination ZM input computing machine, adopt PROLITH or other lithography simulation software to carry out emulation, obtain simulation space image set and close AIM;
2. the demarcation of sensitivity matrix between aerial image characteristic coefficient and zernike coefficient:
Simulation space image set is closed to AIM and carry out traditional principal component analysis (PCA), obtain major component and the corresponding characteristic coefficient that can characterize aerial image.Simulation space image set is closed to AIM to carry out traditional principal component analysis (PCA) and can use formula (1) to carry out.
AIM＝PC·V (3)
Wherein, PC is the major component that simulation space image set that principal component analysis (PCA) obtains closes, and V represents the characteristic of correspondence coefficient that simulation space image set closes.
Using the characteristic coefficient V described in formula (1) and step, the zernike coefficient combination ZM described in 1., as given data, adopts conventional least square fitting method meter sensitivity matrix.Meter sensitivity matrix is used formula (2) to carry out
V＝ZM·S (4)
Wherein, S is the aerial image characteristic coefficient of demarcation and the sensitivity matrix between zernike coefficient.
3. start litho machine and gather aerial image:
Parameter to the projection objective of litho machine to be detected arranges, and parameter synchronization suddenly 1.; Start litho machine, the illumination light that light source sends obtains corresponding lighting system after illuminator adjustment, be irradiated to the test mask in mask platform, aerial image corresponding to multi-direction test badge that utilizes aerial image sensor measurement to converge through projection objective, after check measurement result is errorless, will surveys aerial image and input described computer stored;
4. solving of Ze Nike aberration:
Computing machine is to described actual measurement aerial image, with step 2. described major component PC according to conventional method, carry out major component matching, obtain surveying the characteristic coefficient of aerial image, the sensitivity matrix S that the characteristic coefficient of this actual measurement aerial image obtains in 2. with step, carry out according to a conventional method least square fitting, the Ze Nike aberration that obtains surveyed projection lens of lithography machine, solving result as shown in Figure 3.
With respect to technology [1] formerly, this method more comprehensively high precision detects projection objective wave aberration.
Claims (7)
1. the projection objective wave aberration in-situ measuring method detecting based on aerial image, the measuring system that the method adopts comprises the light source (1) for generation of illuminating bundle, can adjust the illuminator (2) of lighting system and illumination numerical aperture, for bearing test mask (3), also can realize pinpoint mask platform (4), for mask graph is imaged onto to the projection objective system (5) on silicon chip, can scan work stage (7) by pinpoint 6 DOF, be arranged on the aerial image sensor (6) in sextuple scanning work stage and the data handling machine (8) being connected with work stage, it is characterized in that this method comprises the following steps:
1. the foundation that simulation space image set closes:
Adopt traditional B ox-Behnken Design statistical sampling mode or other statistical sampling mode to set zernike coefficient Z
5～Z
37combination ZM; The parameter of selected litho machine: the lighting system of illuminator and partial coherence factor thereof, the use wavelength of litho machine laser instrument is λ, the numerical aperture NA of projection objective; Arrangement test mask in mask platform, the test badge on this test mask is that isolated lines combine or isolate idle pattern, this combination comprises m isolated lines or isolates sky and each isolated lines or isolated sky to have different direction orientations; A described m isolated lines or isolated empty different directions are oriented to 0 °, and 180 °/K, 2 * 180 °/K, 3 * 180 °/K ..., (K-1) * 180 °/K, 180 ° of any m directions that are total in K+1 direction, wherein m and K are positive integer and the m≤K that is more than or equal to 6; Aerial image acquisition range: directions X acquisition range is [L, L], Z direction acquisition range is [F, F]; Aerial image sampling number: directions X sampling number is M, it is N that Z direction gathers sampling number; By above-mentioned parameter design and zernike coefficient combination ZM input computing machine, adopt PROLITH or other lithography simulation software to carry out emulation, obtain simulation space image set and close AIM;
2. the demarcation of sensitivity matrix between aerial image characteristic coefficient and zernike coefficient:
Simulation space image set is closed to AIM and carry out traditional principal component analysis (PCA), obtain the major component and the corresponding characteristic coefficient that characterize aerial image; Use formula (1) to close AIM to simulation space image set and carry out principal component analysis (PCA);
AIM＝PC·V （1）
Wherein, PC is the major component that simulation space image set closes, and V is characteristic of correspondence coefficient;
Using described characteristic coefficient V and described zernike coefficient combination ZM as given data, adopt conventional least square fitting method by formula (2) meter sensitivity matrix S:
V＝ZM·S （2）
3. start litho machine and gather aerial image:
Litho machine to be detected is carried out to parameter setting, and parameter synchronization suddenly 1.; Start litho machine, the illumination light that light source sends obtains corresponding lighting system after illuminator adjustment, be irradiated to the test mask in mask platform, aerial image corresponding to multi-direction test badge that utilizes aerial image sensor measurement to converge through projection objective, after check measurement result is errorless, will surveys aerial image and input described computer stored;
4. solving of Ze Nike aberration:
Computing machine is to described actual measurement aerial image, carry out major component matching, obtain surveying the characteristic coefficient of aerial image, the sensitivity matrix S that the characteristic coefficient of this actual measurement aerial image obtains in 2. with step, carry out according to a conventional method least square fitting, obtain the Ze Nike aberration of surveyed projection lens of lithography machine.
2. method according to claim 1, is characterized in that, described setting photo-etching machine illumination pattern comprises traditional lighting and off-axis illumination.
3. method according to claim 1, is characterized in that, the span of described L is: 3000nm >=L >=450nm; The span of F is 5000nm >=F >=2000nm; The span of M is M >=20, and the span of N is N >=13.
4. method according to claim 1, is characterized in that, described light source comprises mercury lamp, 193nm LASER Light Source, 248nm LASER Light Source, 157nm LASER Light Source, EUV light source.
5. method according to claim 1, is characterized in that, described imageing sensor comprises CMOS, CCD or photodiode.
6. method according to claim 1, is characterized in that, described travelling workpiece platform is included in x, the interior movement of carrying out along any direction of y plane and movement in the z-direction.
7. method according to claim 1, is characterized in that, described projection objective is total transmissivity formula, total-reflection type and refraction-reflection type projection objective, and the numeric aperture values of projection objective is 0≤NA≤1.
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| CN103744270B (en) * | 2014-01-26 | 2016-01-20 | 中国科学院上海光学精密机械研究所 | The strange aberration in-situ detection method of lithographic objective |
| CN104777718B (en) * | 2015-04-09 | 2017-06-06 | 中国科学院上海光学精密机械研究所 | A kind of large-numerical aperture wave aberration of photo-etching machine projection objective detection method |
| KR20230110835A (en) * | 2015-04-21 | 2023-07-25 | 케이엘에이 코포레이션 | Metrology target design for tilted device designs |
| CN106324995B (en) * | 2015-05-12 | 2017-12-12 | 中国科学院上海光学精密机械研究所 | Litho machine quick high spatial resolution wave aberration detection means in situ and method |
| CN106324996B (en) * | 2015-06-15 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | Litho machine original position multi channel imaging quality detection device and method |
| JP6661371B2 (en) * | 2015-12-25 | 2020-03-11 | キヤノン株式会社 | Evaluation method, exposure method, and article manufacturing method |
| CN105629677A (en) * | 2016-01-18 | 2016-06-01 | 中国科学院上海光学精密机械研究所 | Higher-order wave aberration detection mark and detection method of photoetching projection objective lens |
| CN105675263B (en) * | 2016-01-18 | 2018-03-20 | 中国科学院上海光学精密机械研究所 | The caliberating device of position error and its demarcation and compensation method in plane sub-aperture stitching system |
| CN108020400A (en) * | 2017-12-12 | 2018-05-11 | 中国科学院上海光学精密机械研究所 | Photoetching projection objective lens high-rank wavefront aberration detection method based on more polarization illuminations |
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