CN105609636A - Field effect transistor employing directional single-walled carbon nanotube array as channel and manufacturing method - Google Patents
Field effect transistor employing directional single-walled carbon nanotube array as channel and manufacturing method Download PDFInfo
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- CN105609636A CN105609636A CN201610088300.9A CN201610088300A CN105609636A CN 105609636 A CN105609636 A CN 105609636A CN 201610088300 A CN201610088300 A CN 201610088300A CN 105609636 A CN105609636 A CN 105609636A
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- 239000002109 single walled nanotube Substances 0.000 title claims abstract description 28
- 230000005669 field effect Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 43
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 238000001338 self-assembly Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- JAJWGJBVLPIOOH-IZYKLYLVSA-M sodium taurocholate Chemical compound [Na+].C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(=O)NCCS([O-])(=O)=O)C)[C@@]2(C)[C@@H](O)C1 JAJWGJBVLPIOOH-IZYKLYLVSA-M 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 239000002238 carbon nanotube film Substances 0.000 abstract description 8
- 238000001459 lithography Methods 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002041 carbon nanotube Substances 0.000 description 12
- 229910021393 carbon nanotube Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- YCSMVPSDJIOXGN-UHFFFAOYSA-N CCCCCCCCCCCC[Na] Chemical compound CCCCCCCCCCCC[Na] YCSMVPSDJIOXGN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004720 dielectrophoresis Methods 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a field effect transistor employing a directional single-walled carbon nanotube array as a channel and a manufacturing method. A source and a drain are manufactured at two sides of an ordered single-walled carbon nanotube array layer on a substrate through lithography exposure respectively; and lithography exposure and magnetron sputtering are sequentially carried out on the top part to form a gate and a dielectric layer, so that preparation of the field effect transistor is achieved. Regulation and control on the performance of the field effect transistor can be freely achieved by changing the density of a directionally arranged composite carbon nanotube film, and the physical dimension and the doping parameter of a device.
Description
Technical field
The present invention relates to a kind of field-effect transistor manufacturing technology, the field that specifically a kind of directional single-wall carbon nanotube array is raceway grooveEffect transistor and preparation method.
Background technology
CNT is a kind of have excellent mechanical performance and monodimension nanometer material of Electronic Performance, is considered to make and receives futureThe first-selection of rice device. At present, the field-effect based on single-root carbon nano-tube is successfully made. But, in actual applications,The technique of field-effect transistor prepared by the CNT of single semiconductive is comparatively complicated, and the current capability of device is also subject to material originallyThe restriction of body size. The carbon nano pipe array of oriented alignment can be realized high On current. Therefore oriented alignment in actual applicationsCarbon nano pipe array can be used to substitute single-root carbon nano-tube field-effect transistor.
Carbon nano pipe array film can be by directed self assembly SWCNT array on substrate, the carbon nano-pipe array of oriented alignmentRow also can be arranged and be realized fieldistor channel by dielectrophoresis.
Through the retrieval of prior art is found, Chinese patent literature CN101540285A, open (bulletin) day2009.09.23, disclose a kind of preparation method of carbon nano tube thin-film field-effect transistor of nano electron device, step is:On the silicon chip that insulating barrier is contained on surface, adopt photoetching technique to produce source-drain electrode pattern, CNT is passed through to the two-way electricity of alternating electric fieldThe method of swimming is deposited between source-drain electrode and forms carbon nano-tube film, then deposits with the method selective removal of plasma etchingCNT in metallic carbon nanotubes, obtain having the carbon nano tube thin-film field-effect transistor of superperformance; Another kind is:CNT is deposited on the silicon chip that contains insulating barrier in surface and is formed carbon nano-tube film by the method for self assembly, then adopt lightLithography is produced source-drain electrode pattern on carbon nano-tube film, then deposits with the method selective removal of plasma etchingMetallic carbon nanotubes in CNT, obtains carbon nano tube thin-film field-effect transistor, but the electricity of this kind of unordered reticulated filmDucting capacity is subject to certain restrictions.
Summary of the invention
The present invention is directed to defect and the deficiency of above-mentioned prior art, proposing a kind of directional single-wall carbon nanotube array is the field effect of raceway grooveAnswer transistor and preparation method, this device has good rectification characteristic and stability.
The present invention is achieved through the following technical solutions:
The present invention relates to the preparation method that a kind of directional single-wall carbon nanotube array is the field-effect transistor of raceway groove, be positioned at substrateOn the both sides of orderly single-wall carbon nanotube array layer make respectively source, drain electrode by photolithographic exposure, then at top photolithographic exposure successivelyObtain grid and dielectric layer with magnetron sputtering, realize the preparation of field-effect transistor.
Described orderly single-wall carbon nanotube array layer, first uses H2SO4And H2O2Mixed liquor first carries out parent to substrate surfaceHydration process, then uses APTES (3-aminopropyl triethoxysilane) solution to soak surface hydrophilic substrate after treatment, then will locateSubstrate after reason is immersed in the SWCNT aqueous solution, by the electrostatic force between the amino group on SWCNT and APTESMake SWCNT by self assembly in substrate.
In described APTES solution, the volume ratio of APTES and ethanol is 1:5.
The described SWCNT aqueous solution refers to: concentration is respectively the SWCN of 0.5g/mL, the sodium taurocholate of 0.1wt% (SC)Lauryl sodium sulfate (SDS) with 0.9wt%.
Described CNT, diameter is 0.9～1.8nm, length is 2～5 μ m.
Described substrate adopts but is not limited to have SiO2The silicon chip of thermal oxide layer.
Described source, drain electrode and grid, be preferably Au, Pt, Pd, Ti or Cu and make.
Described source, drain electrode are preferably electrode, and its width, is 0.5～5 μ m to interelectrode distance.
The width of described grid is 0.5～5 μ m, and thickness is 100～500nm.
Described photolithographic exposure, its size can regulate according to amorphous carbon nano-tube film channel dimensions used, is generally(0.5～5)μm*(1～3)μm。
Described photolithographic exposure, adopts two-layer photoresist to realize, wherein: and the PMMA photoresist of ground floor molecular weight 495,Thickness is about 200nm, the PMMA photoresist of second layer molecular weight 950, and thickness is about 100nm.
Described photoresist preferably at high temperature carries out drying glue after every layer of spin coating.
Described dielectric layer is preferably silica, aluminium oxide or hafnium oxide, and its thickness is 50～200nm.
The field-effect transistor that to the present invention relates to directional single-wall carbon nanotube array that said method prepares be raceway groove, by upper andUnder comprise successively dielectric layer, grid layer and source-drain electrode layer, wherein: the source electrode in source-drain electrode layer and drain electrode between be provided with orderly single wall carbonNano-tube array layer.
Technique effect
Compared with prior art, the present invention adopts oriented alignment carbon nano-tube film to prepare field-effect transistor, and device hasGood switching characteristic is stable at air at room temperature performance. The present invention is by changing unordered mesh carbon nanotube film and oriented alignmentThe density of carbon nano pipe array, the physical dimension of device, can freely realize the regulation and control to field-effect transistor performance.
Brief description of the drawings
Fig. 1 is that embodiment 1 prepares the structural representation that oriented alignment CNT is the field-effect transistor of raceway groove;
In figure: oriented alignment carbon nanotube layer 1, source-drain electrode 2, dielectric layer 3, top grid 4, substrate 5.
Detailed description of the invention
Embodiment 1
The present embodiment comprises the following steps:
The first step, utilizing electrostatic self-assembled technology is 1 μ m in the silicon chip surface self assembly one deck density as substrate-2Orientation rowCloth carbon nanotube layer, is specially:
1.1) use H2SO4And H2O2Mixed liquor first carries out hydrophilicity-imparting treatment to substrate surface;
In described mixed liquor, H2SO4And H2O2Volume ratio be 1:3.
Described hydrophilicity-imparting treatment is carried out under 45 DEG C of environment, is specially and soaks 30min.
1.2) use APTES solution to soak surface hydrophilic substrate after treatment;
In described APTES solution, the volume ratio of APTES and ethanol is 1:5.
Described immersion is at room temperature carried out, and soak time is 20min.
1.3) substrate after treatment is immersed in the SWCNT aqueous solution, by the amino group on SWCNT and APTES itBetween electrostatic force make SWCNT by self assembly in substrate.
Described being immersed under 25 DEG C of environment carried out, and soaks 1-12 hour.
Second step, as shown in Figure 1, utilizes ultraviolet photolithographic beamwriter lithography and magnetron sputtering technique at oriented alignment carbon nanotube layerTwo ends make Au symmetry electrode, electrode width is 2 μ m, is 1 μ m to interelectrode distance.
Described Au symmetry electrode, preferably utilizes ion etching to remove the unnecessary carbon of oriented alignment network carbon nano-tube channel sideNanotube.
The 3rd step applies electron beam resist in obtained device substrate, utilizes the top of electron beam lithography to CNTCarry out windowing exposure, utilize Au layer and the SiO of magnetron sputtering technique 50nm of sputter 50nm on carbon pipe film raceway groove2Be situated betweenMatter layer, forms top gate electrode.
Described window, is of a size of 2 μ m*1 μ m; The outer unexposed part of window will be subject to the protection of photoresist PMMA, windowThe part that in mouthful, carbon nano-tube film raceway groove is exposed will be exposed in air after development and photographic fixing.
The carbon nanotube field-effect transistor obtaining in Fig. 1 is carried out under dark condition to I-V performance test, apply source electric leakagePressure+1V, measurement gate voltage scope is-arrive+20V of 20V. Result shows the increase along with negative grid voltage, and device current is with the side of indexFormula increases; In the time applying positive gate voltage, device does not almost have electric current, and device shows the switch of typical p-type field-effect transistorCharacteristic.
Above-mentioned concrete enforcement can by those skilled in the art under the prerequisite that does not deviate from the principle of the invention and aim in a different mannerIt is carried out to part adjustment, and protection scope of the present invention is as the criterion with claims and can't help above-mentioned concrete enforcement and limit, in its scopeEach interior implementation is all subject to the present invention's constraint.
Claims (10)
1. a preparation method for the field-effect transistor that directional single-wall carbon nanotube array is raceway groove, is characterized in that, is being positioned atSource, drain electrode are made respectively by photolithographic exposure in the both sides of suprabasil orderly single-wall carbon nanotube array layer, then the photoetching successively at topExposure and magnetron sputtering obtain grid and dielectric layer, realize the preparation of field-effect transistor.
2. preparation method according to claim 1, is characterized in that, described orderly single-wall carbon nanotube array layer, firstUse H2SO4And H2O2Mixed liquor first carries out hydrophilicity-imparting treatment to substrate surface, then soaks surface hydrophilic with APTES solutionSubstrate after treatment, then substrate after treatment is immersed in the SWCNT aqueous solution, by the amino on SWCNT and APTESElectrostatic force between group make SWCNT by self assembly in substrate.
3. preparation method according to claim 2, is characterized in that, the body of APTES and ethanol in described APTES solutionLong-pending than being 1:5.
4. preparation method according to claim 2, is characterized in that, the described SWCNT aqueous solution refers to: concentration is respectivelyThe lauryl sodium sulfate of the SWCN of 0.5g/mL, the sodium taurocholate of 0.1wt% and 0.9wt%.
5. preparation method according to claim 1, is characterized in that, described CNT, and diameter is 0.9～1.8nm,Length is 2～5 μ m.
6. preparation method according to claim 1, is characterized in that, described source, drain electrode and grid, for Au, Pt,Pd, Ti or Cu make.
7. according to the preparation method described in claim 1 or 6, it is characterized in that, described source, drain electrode are to electrode, its width,Be 0.5～5 μ m to interelectrode distance; The width of described grid is 0.5～5 μ m, and thickness is 100～500nm.
8. preparation method according to claim 1, is characterized in that, described photolithographic exposure adopts two-layer photoresist to realize,Wherein: the PMMA photoresist of ground floor molecular weight 495, thickness is 200nm, the PMMA photoetching of second layer molecular weight 950Glue, thickness is 100nm.
9. preparation method according to claim 1, is characterized in that, described dielectric layer is silica, aluminium oxide or oxygenChange hafnium, its thickness is 50～200nm.
10. the field effect that the directional single-wall carbon nanotube array obtaining according to preparation method described in above-mentioned arbitrary claim is raceway grooveAnswer transistor, it is characterized in that, from top to bottom comprise successively dielectric layer, grid layer and source-drain electrode layer, wherein: in source-drain electrode layerBetween source electrode and drain electrode, be provided with orderly single-wall carbon nanotube array layer.
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| CN201610088300.9A CN105609636B (en) | 2016-02-17 | 2016-02-17 | Directional single-wall carbon nanotube array is the field-effect transistor and production method of raceway groove |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109030564A (en) * | 2018-06-04 | 2018-12-18 | 深圳大学 | A kind of transistor-type formaldehyde sensor and preparation method thereof |
| CN109607469A (en) * | 2019-01-07 | 2019-04-12 | 四川理工学院 | Flexible sensor and preparation method thereof based on single-walled carbon nanotube hanging structure |
| CN113725362A (en) * | 2020-05-25 | 2021-11-30 | 国家纳米科学中心 | Carbon nano tube film suspended field effect transistor and transistor manufacturing method |
| WO2022001844A1 (en) * | 2020-06-28 | 2022-01-06 | 华为技术有限公司 | Field effect transistor and preparation method therefor, and semiconductor structure |
| CN114177959A (en) * | 2021-12-16 | 2022-03-15 | 清华大学 | Preparation method of nano-fluidic chip based on carbon nano-tube |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109030564B (en) * | 2018-06-04 | 2021-05-11 | 深圳大学 | Transistor type formaldehyde sensor and manufacturing method thereof |
| CN109607469A (en) * | 2019-01-07 | 2019-04-12 | 四川理工学院 | Flexible sensor and preparation method thereof based on single-walled carbon nanotube hanging structure |
| CN109607469B (en) * | 2019-01-07 | 2024-04-12 | 四川理工学院 | Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof |
| CN113725362A (en) * | 2020-05-25 | 2021-11-30 | 国家纳米科学中心 | Carbon nano tube film suspended field effect transistor and transistor manufacturing method |
| WO2022001844A1 (en) * | 2020-06-28 | 2022-01-06 | 华为技术有限公司 | Field effect transistor and preparation method therefor, and semiconductor structure |
| CN114177959A (en) * | 2021-12-16 | 2022-03-15 | 清华大学 | Preparation method of nano-fluidic chip based on carbon nano-tube |
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| CN105609636B (en) | 2018-05-08 |
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