CN109607469B - Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof - Google Patents
Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN109607469B CN109607469B CN201910011530.9A CN201910011530A CN109607469B CN 109607469 B CN109607469 B CN 109607469B CN 201910011530 A CN201910011530 A CN 201910011530A CN 109607469 B CN109607469 B CN 109607469B
- Authority
- CN
- China
- Prior art keywords
- electrode
- array
- independent
- walled carbon
- dependent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002109 single walled nanotube Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000725 suspension Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000004720 dielectrophoresis Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004070 electrodeposition Methods 0.000 claims abstract description 15
- 230000008878 coupling Effects 0.000 claims abstract description 13
- 238000010168 coupling process Methods 0.000 claims abstract description 13
- 238000005859 coupling reaction Methods 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 6
- 238000005459 micromachining Methods 0.000 claims abstract description 4
- 230000001419 dependent effect Effects 0.000 claims description 37
- 239000010931 gold Substances 0.000 claims description 31
- 238000001020 plasma etching Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000001962 electrophoresis Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 239000002270 dispersing agent Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000001808 coupling effect Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003940 alternating current dielectrophoresis Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0094—Constitution or structural means for improving or controlling physical properties not provided for in B81B3/0067 - B81B3/0091
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention provides a flexible sensor based on a single-wall carbon nano tube suspension structure and a manufacturing method thereof, wherein an electrode pair is arranged on a flexible substrate by utilizing a silicon micromachining technology; then, through the method of alternating current coupling dielectrophoresis, the single-walled carbon nanotube is directionally deposited between the electrode pairs on the flexible substrate under the action of the electric field force in the suspension; and then proportioning saturated Au electroplating solution, and implementing a region selective electrodeposition Au technology to realize localized deposition Au on the Au electrode to press and cover the single-walled carbon nanotube. The invention realizes one-dimensional directional arrangement of single or single-beam single-wall carbon nanotubes, improves the sensitivity and stability of the device, and is easy for industrial production.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a flexible sensor based on a single-walled carbon nanotube suspension structure and a manufacturing method thereof.
Background
The nano device manufacturing process combining the one-dimensional nano material and the microstructure realizes innovation and upgrading in the micro-nano processing technology, possibly breaks through the performance limit of the micro-scale device, and lays a road for realizing the ultra-microminiaturization and high functional density flexible device. Single-walled carbon nanotubes (SWNTs) are typical one-dimensional nanomaterials, have many outstanding physical and chemical properties due to their unique structures, and have potential applications in the fields of mechanics, electricity, optics, materialology, and the like, and particularly have excellent mechano-electric properties, so that the SWNTs are expected to become ideal alternative materials for high-efficiency strain sensing devices. Currently, commercial sensing devices can be generally classified into optical sensors, piezoelectric sensors, and piezoresistive strain sensors. Among them, the piezoresistive strain sensor is one of the most important sensing devices due to its wide range and convenience in technical application.
In the prior art, the flexible sensor based on the single-walled carbon nanotube is not easy to realize large-scale independent device manufacture; the electrode pair distance on the flexible substrate is below 5 microns, so that single-wall carbon nano tube or single-beam deposition on one electrode pair is difficult to realize; the stability of the device is not high.
Disclosure of Invention
The invention aims to provide a flexible sensor based on a single-walled carbon nanotube suspension structure and a manufacturing method thereof, so as to solve the problems in the background art.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the single-walled carbon nanotube suspension structure comprises an electrode pair array formed by orderly arranging a plurality of parallel electrode pairs, a substrate and single-walled carbon nanotubes, wherein one electrode pair array is an independent electrode array arranged on one side of the substrate, the other electrode pair array is a dependent electrode array arranged on the other side of the substrate, the dependent electrode array is connected with the input end of a signal source, and the output end of the signal source is suspended at the top of the independent electrode array; the independent electrode array consists of a plurality of independent electrodes, the dependent electrode array consists of a plurality of dependent electrodes which are electrically connected with each other, and the single-walled carbon nanotube is directionally placed between the independent electrodes and the dependent electrodes by an alternating current coupling dielectrophoresis method.
Preferably, it is: the substrate is a flexible substrate or a hard substrate.
Preferably, it is: the distance between the electrode pairs is smaller than 5 mu m, the distance between the independent electrode and the non-independent electrode is 5-10 mu m, the independent electrode and the non-independent electrode are microelectrodes, and the microelectrodes are gold microelectrodes or platinum microelectrodes.
Preferably, it is: the distance between the output end of the signal source and the independent electrode array is 0.4-0.6 mm.
Preferably, it is: the surface of the substrate is paved with a dispersion liquid layer.
The flexible sensor based on the suspension structure of the single-walled carbon nano tube comprises a flexible substrate, an electrode pair array and the single-walled carbon nano tube, wherein the electrode pair array is formed by orderly arranging a plurality of parallel electrode pairs, one electrode pair array is an independent electrode array arranged on one side of the flexible substrate, the other electrode pair array is a dependent electrode array arranged on the other side of the flexible substrate, the dependent electrode array is connected with the input end of a signal source, and the output end of the signal source is suspended at the top of the independent electrode array; the independent electrode array consists of a plurality of independent electrodes, the dependent electrode array consists of a plurality of dependent electrodes which are electrically connected with each other, and two ends of the single-walled carbon nanotube are fixedly connected with the independent electrodes and the dependent electrodes respectively.
Preferably, it is: the flexible substrate is a PI film, and the thickness of the flexible substrate is 10-30 mu m.
The manufacturing method of the flexible sensor comprises the following steps:
s1: the method comprises the steps of utilizing a silicon micromachining method to set an orderly arranged electrode pair array on a flexible substrate, wherein one electrode pair array is an independent electrode array, and the other electrode pair array is an independent electrode array, wherein the independent array electrode comprises a large number of independent electrodes in an array form, and all electrodes in the independent electrode array are electrically connected with each other;
s2: suspending the output end of a signal source above an independent electrode array, connecting the input end of the signal source with a non-independent electrode array, dripping a single-walled carbon nanotube dispersing agent into a flexible substrate provided with an electrode pair array, and then opening the signal source to enable the single-walled carbon nanotube to be assembled between the electrode pairs in a directional suspending manner through alternating current coupling dielectrophoresis;
s3: the saturated Au electroplating solution is proportioned, and the single-walled carbon nano-tube is pressed by using region selective electrodeposition and localized deposition Au, so that the two ends of the single-walled carbon nano-tube are fixedly connected with the independent electrode array and the dependent electrode array respectively.
Preferably, it is: the silicon micromachining method comprises spin coating, sputtering, photoresist coating, photoresist exposure and development, ion beam etching, reactive ion etching and photoresist removal, wherein the sputtering thickness is 300-500 nm.
Preferably, it is: the electrophoresis time of the alternating-current coupled dielectrophoresis is 4-7 min.
The invention realizes one-dimensional directional arrangement of single or single-beam single-wall carbon nanotubes, can improve the sensitivity and stability of the device, is easy for industrial production, and saves the production cost; the requirements on the substrate are low, and the pretreatment and the post-treatment of the substrate can be well combined; the nano-scale material has scale effect, interface effect and volume effect, the suspended structure device is not easily influenced by a substrate when in operation, the negative effects of the above effects are avoided to the maximum extent, in addition, the device is easy to form an effective sensing effect structure for certain mechanical and flow field sensors, and the sensitivity is increased; post-treatment is easy to carry out, and the expansibility of the application of the single-wall carbon nano tube device is increased. The flexible substrate and the silicon microelectronic process are combined, so that electrode pairs which are orderly arranged are manufactured on the flexible substrate, the spacing between the electrode pairs is 3-5 mu m, the single-walled carbon nanotubes are easy to be in a suspended state by a small spacing, the single-walled carbon nanotubes can be separated from the substrate even if the substrate is hard, and the performance interference of the substrate on the single-walled carbon nanotubes is reduced; the directional arrangement of single-beam single-wall carbon nanotubes between electrode pairs is realized through alternating current coupling dielectrophoresis, so that the interference between the single-wall carbon nanotube chaotic lap joint pairs can be reduced, the stability of the device is improved, a large number of independent electrodes can simultaneously perform dielectrophoresis due to the coupling effect, and the large-scale preparation of the single-wall carbon nanotube sensing device can be realized; the area selective electrodeposition Au technology and the annealing technology can improve the stability and the contact characteristic of the single-walled carbon nanotube and the electrode, and reduce the contact resistance by nearly one order of magnitude.
Drawings
The accompanying drawings are included to provide a further understanding of the invention. In the drawings:
FIG. 1 is a schematic diagram of a single-walled carbon nanotube coupled dielectrophoresis structure.
FIG. 2 is a schematic diagram of the structure of the present invention.
In the figure: 1 is a substrate, 2 is an input end of a signal source, 3 is an output end of the signal source, 4 is a dispersing agent layer, 5 is an independent electrode array, 6 is a non-independent electrode array, 7 is a single-walled carbon nanotube, 8 is a PI film, 9 is RIE PI,10 is IBE Au, and 11 is Deposited Au.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1: as shown in fig. 1, the single-walled carbon nanotube suspension structure comprises an electrode pair array formed by orderly arranging a plurality of electrode pairs, a substrate 1, single-walled carbon nanotubes 7, an input end 2 of a signal source and an output end 3 of the signal source, wherein one electrode pair array is an independent electrode array 5 which is arranged on one side of the substrate 1, the independent electrode array 5 is not electrically connected, the manufacture of a large-scale independent device can be realized, the other electrode array is a dependent electrode array 6 which is arranged on the other side of the substrate 1, in the sensor realization process, the dependent electrode array 6 is connected with the input end 2 of the signal source, and the output end 2 of the signal source is suspended at the top of the independent electrode array 5; the independent electrode array 5 is composed of a plurality of independent electrodes, the dependent electrode array 6 is composed of a plurality of dependent electrodes which are electrically connected with each other, and the single-wall carbon nano tube is directionally placed between the independent electrodes and the dependent electrodes by an alternating current coupling dielectrophoresis method.
Further is: the substrate 1 is a flexible substrate or a hard substrate; the spacing between the electrode pairs is smaller than 5 mu m, the single-walled carbon nanotubes 7 are easy to be in a suspended state by the small spacing, and even a hard substrate can separate the single-walled carbon nanotubes 7 from the substrate, so that the performance interference of the substrate on the single-walled carbon nanotubes 7 is reduced; the electrode pair is composed of two microelectrodes which are in one-to-one correspondence, the width of the electrode is about 3 mu m, the length of the electrode is about 15 mu m, the microelectrodes are gold microelectrodes or platinum microelectrodes, the interval between the electrodes is 5-10 mu m, the distance between the output end 3 of the signal source and the independent electrode array 5 is 0.4-0.6 mm, and a dispersion liquid layer 4 is paved on the upper surface of the substrate.
Example 2: the flexible sensor based on the suspension structure of the single-walled carbon nanotube comprises a flexible substrate, an electrode pair array formed by orderly arranging a plurality of electrode pairs and the single-walled carbon nanotube 7, wherein one electrode pair array is an independent electrode array arranged on one side of the flexible substrate, the other electrode pair array is a dependent electrode array 6 arranged on the other side of the flexible substrate, the dependent electrode array 6 is connected with the input end 2 of a signal source, and the output end 3 of the signal source is suspended at the top of the independent electrode array 5; the independent electrode array 5 is composed of a plurality of independent electrodes, the dependent electrode array 6 is composed of a plurality of electrodes which are electrically connected with each other, and two ends of the single-walled carbon nanotube 7 are fixedly connected with the independent electrodes and the dependent electrodes respectively.
Further is: the flexible substrate is a PI film 8, and the thickness of the flexible substrate is 10-30 mu m.
Example 3: the manufacturing method of the flexible sensor comprises the following steps:
s1: the silicon micro-processing technology is utilized, orderly arranged parallel electrode pairs are arranged on the flexible substrate, one electrode pair array is an extremely independent electrode array 5, the other electrode pair array is an extremely dependent electrode array 6, wherein the independent electrode array 5 comprises a large number of independent electrodes in an array form, all the electrodes in the dependent electrode array 6 are mutually electrically connected, and the flexible substrate is combined with a silicon micro-electronic technology, so that the electrode pairs which are orderly arranged are manufactured on the flexible substrate;
s2: firstly, suspending an output end 3 of a signal source in a dispersing agent of an independent electrode array 5, and connecting an input end 2 of the signal source with an electrode array 6; dispersing the single-walled carbon nanotubes 7 in a dispersing agent, dripping the dispersing agent onto a flexible substrate provided with electrode pairs, wherein the single-walled carbon nanotubes 7 can be mutually adsorbed in common water, and in special dispersing agent, the single-walled carbon nanotubes 7 can exist singly, then opening a signal source, enabling the single-walled carbon nanotubes 7 to be directionally suspended between the electrode pairs through an alternating-current coupling dielectrophoresis method, enabling the signal source output end of the alternating-current coupling dielectrophoresis not directly connected to the electrodes, but to generate a coupling effect through induction of a certain medium so as to achieve the purpose of electrophoresis, obtaining self-limitation in the electrophoresis process through the alternating-current coupling dielectrophoresis, realizing the directional arrangement of single-walled carbon nanotubes 7 between the electrode pairs, reducing the interference between the single-walled carbon nanotubes 7 in a disordered lap joint way, and improving the stability of devices. In addition, the coupling effect enables a large number of independent electrodes to simultaneously perform dielectrophoresis effect, and can realize large-scale preparation of the single-walled carbon nanotube 7 sensing device;
s3: the saturated Au electroplating solution is proportioned, the single-walled carbon nanotube 7 is covered by localized deposition Au by utilizing a region selective electrodeposition technology, so that two ends of the single-walled carbon nanotube 7 are fixedly connected with the independent electrode array 5 and the dependent electrode array 6 respectively, the stability and the contact characteristic of the single-walled carbon nanotube 7 and an Au electrode can be improved by the region selective electrodeposition Au technology and an annealing technology, the contact resistance is reduced by nearly one magnitude, and a simple and quick method is provided for the reliability of micro-nano connection.
Further is: the silicon micro-processing method comprises vacuum adsorption, sputtering, photoresist coating, photoresist exposure and development, ion beam etching, reactive ion etching and photoresist removal, wherein the sputteringThickness of the light beam isThe electrophoresis time of the alternating-current coupling dielectrophoresis is 4-7 min.
Example 4: the flexible sensor comprises a flexible substrate, an electrode pair array formed by orderly arranging a plurality of electrode pairs, a single-walled carbon nanotube 7, an input end 2 of a signal source and an output end 3 of the signal source, wherein one electrode pair array is an independent electrode array which is arranged on one side of the flexible substrate, the other electrode pair array is a dependent electrode array 6 which is arranged on the other side of the flexible substrate, the dependent electrode array 6 is connected with the input end 2 of the signal source, and the output end 3 of the signal source is suspended at the top of the independent electrode array 5; after the device is connected, alternating current coupling dielectrophoresis is carried out, the independent electrode array and the output end 3 of the suspended signal source immersed in the dispersing agent layer 4 form a coupling effect, dispersing agent is arranged in the dispersing agent layer 4, the dispersing agent can keep the single-walled carbon nano tube in a dispersed state, the distance between the electrode at the output end 3 of the suspended signal source and the independent electrode array 5 is kept at about 0.5mm, and the electrophoresis time is about 5min. The independent electrode pair array 5 is coupled with the input end 2 of the signal source to form a non-uniform electric field, directional attractive force is generated on the single-walled carbon nanotubes 7 in the dispersing agent, opposite self-limiting repulsive force is generated on the single-walled carbon nanotubes 7 in the dispersing agent due to the change of the surrounding electric field of the counter electrode which is lapped with the single-walled carbon nanotubes 7, and under the condition that the dielectric constant of the dispersing agent layer 4 is unchanged in a short time and the temperature is stable, other single-walled carbon nanotubes 7 are not distributed on the counter electrode which is electrically connected with the formed single-walled carbon nanotubes 7, so that single-stranded directional ordered arrangement of the single-walled carbon nanotubes 7 is realized; the independent electrode array 5 consists of a plurality of independent electrodes, the non-independent electrode array 6 consists of a plurality of electrodes which are electrically connected with each other, and two ends of the single-walled carbon nanotube 7 are respectively fixed with the independent electrode array 5 and the electrode array 6 by a region selective electrodeposition method.
Example 5: the manufacturing steps of the flexible sensor are as follows:
1) Preparation of Au electrode on flexible substrate
PI film 8 at 25 μm thicknessUpper sputter thickness ofAn Au electrode pair array with an electrode spacing of 3 μm can be obtained, and the main process flow is as follows:
a. preparing a PI film 8 film (2.5 in, thickness 25 μm), cleaning, and flattening; b. vacuum adsorbing the PI film; c. sputtering Au; d. coating photoresist; e. exposing and developing the front surface of the mask plate by photoetching; f. ion Beam Etching (IBE); g. reactive ion etching (Reactive Ion Etching, RIE); h. and (5) removing photoresist. And (3) exposing and developing the photoresist through a mask, and then removing the sputtered Au film which is not blocked by the photoresist by using Ion Beam Etching (IBE) to form an intermediate layer IBE Au. And continuing to etch the PI film without the Au film coverage by using reactive ion etching (Reactive Ion Etching, RIE) to form a RIE PI bulge of the lowest layer, wherein the shape of the RIE PI bulge is consistent with that of the electrode pattern. After removing the glue and implementing AC coupling dielectrophoresis to connect the carbon nano tube, the selective electrodeposition Au is utilized to form a third layer of Deposited Au
2) Single-beam directional arrangement of single-wall carbon nano tube 7
One group of electrode pair arrays on the flexible substrate is composed of equally-spaced independent finger electrodes, the other group of electrode pair arrays is composed of finger electrodes which are electrically connected with each other, the interval between the electrodes is 8 mu m, when alternating-current dielectrophoresis is carried out, the independent electrode arrays 5 and the output end 3 of a suspended signal source immersed in dispersing agent form a coupling effect, and the distance between the electrodes of the output end 3 of the suspended signal source and the independent electrode arrays 5 is kept to be about 0.5 mm. The independent electrode pair array 5 is coupled with the electrode array 6 connected with the input end 2 of the signal source to form a non-uniform electric field, and directional attractive force is generated on the single-walled carbon nanotubes 7 in the dispersing agent, and opposite self-limiting repulsive force is generated on the single-walled carbon nanotubes 7 in the dispersing agent due to the change of the surrounding electric field of the opposite electrode pair, so that single-beam directional arrangement of the single-walled carbon nanotubes 7 is realized.
3) Regioselective electrodeposition of Au
At the interface of the semiconductor and the metal, the semiconductor band will bend due to its different work functions. The work function of Au is 5.1eV, while the work function of single-walled carbon nanotubes 7 is about 4.5eV. It is this difference in work functions that will produce polarization at the interface of the single-walled carbon nanotube 7 and the electrode that will equalize the fermi level of the single-walled carbon nanotube 7 valence band and the Au electrode, while the single-walled carbon nanotube 7 energy level between the electrode pair will bend toward a lower energy level. Since the valence band is equal to the metal energy level, the single-walled carbon nanotube 7 in contact with the Au electrode will exhibit semiconductor characteristics. Therefore, metal Au is easy to deposit in the electroplating process, and selective electrodeposition can be realized by selecting proper electroplating parameters. As a result of electrostatic potential analysis of the device by an electrostatic force microscope (Electrostatic Force Microscope, EFM), it was found that if the substrate was at a zero potential point, a potential difference of 0.3 to 0.4V was generated between the metal electrode and the single-walled carbon nanotube 7, and by using this potential difference, region-selective electrodeposition could be achieved. In the implementation process, 1.5g of iodine and 1.5g of potassium iodide are dissolved in alcohol, and then Au is dissolved to be saturated at the constant temperature of 80 ℃ to prepare the electroplating solution. After quantitatively dripping electroplating liquid on the PI film 8 on which the single-wall carbon nano tube 7 is directionally deposited, taking an Au electrode pair as a working electrode and an Ag/AgCl electrode as a reference electrode, switching on a power supply to carry out electrodeposition, observing current, and continuously dripping the electroplating liquid if the current is less than 2.4 mA. And after 3 minutes, switching off the power supply, taking out the PI film, cleaning the PI film with absolute ethyl alcohol, and drying and annealing the PI film.
In example 6, as shown in fig. 2, au was sputtered on the PI film, photoresist was coated, and after development by exposure through a reticle, the Au film formed by sputtering, which was not blocked by the photoresist, was removed by Ion Beam Etching (IBE) to form an intermediate layer IBE Au10. And continuing to etch the PI film without the Au film coverage by using reactive ion etching (Reactive Ion Etching, RIE) to form the RIE PI9 bulge of the lowest layer, wherein the shape of the RIE PI9 bulge is consistent with that of the electrode pattern. After removing the photoresist and performing alternating current coupling dielectrophoresis to splice the carbon nanotubes, the third layer of reduced Au11 is formed by selective electrodeposition of Au.
Although the present invention has been described with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements and changes may be made without departing from the spirit and principles of the present invention.
Claims (3)
1. The single-walled carbon nanotube suspension structure is characterized by comprising an electrode pair array formed by orderly arranging a plurality of parallel electrode pairs, a substrate (1) and single-walled carbon nanotubes (7), wherein one electrode pair array is an independent electrode array (5) arranged on one side of the substrate (1), the other electrode pair array is a dependent electrode array (6) arranged on the other side of the substrate (1), the dependent electrode array (6) is connected with an input end (2) of a signal source, and an output end (3) of the signal source is suspended at the top of the independent electrode array (5);
the independent electrode array (5) consists of a plurality of independent electrodes, the dependent electrode array (6) consists of a plurality of dependent electrodes which are electrically connected with each other, and the single-walled carbon nanotube (7) is directionally suspended between the independent electrodes and the dependent electrodes; the substrate (1) is a flexible substrate;
the distance between the electrode pairs is smaller than 5 mu m, the distance between the independent electrode and the non-independent electrode is 5-10 mu m, the independent electrode and the non-independent electrode are microelectrodes, and the microelectrodes are gold microelectrodes or platinum microelectrodes;
the distance between the output end (3) of the signal source and the independent electrode array (5) is 0.4-0.6 mm;
the surface of the substrate (1) is paved with a dispersion liquid layer.
2. The flexible sensor based on the single-walled carbon nanotube suspension structure as claimed in claim 1, which is characterized by comprising a flexible substrate, an electrode pair array formed by orderly arranging a plurality of parallel electrode pairs, and single-walled carbon nanotubes (7), wherein one electrode pair array is an independent electrode array arranged on one side of the flexible substrate, the other electrode pair array is a dependent electrode array (6) arranged on the other side of the flexible substrate, the dependent electrode array (6) is connected with an input end (2) of a signal source, and an output end (3) of the signal source is suspended at the top of the independent electrode array (5);
the independent electrode array (5) consists of a plurality of independent electrodes, the dependent electrode array (6) consists of a plurality of dependent electrodes which are electrically connected with each other, and two ends of the single-walled carbon nanotube (7) are fixedly connected with the independent electrodes and the dependent electrodes respectively; the flexible substrate is a PI film (8), and the thickness of the flexible substrate is 10-30 mu m.
3. A method of manufacturing a flexible sensor as claimed in claim 2, comprising the steps of:
s1: an orderly arranged electrode pair array is arranged on a flexible substrate by utilizing a silicon micromachining method, wherein one electrode pair array is an independent electrode array (5) and the other electrode pair array is a dependent electrode array (6), the independent electrode array (5) comprises a large number of independent electrodes in an array form, and all the electrodes in the dependent electrode array (6) are electrically connected with each other; the silicon micro-processing method comprises spin coating, sputtering, photoresist coating, photoresist exposure and development, ion beam etching, reactive ion etching and photoresist removal, wherein the sputtering thickness is 300-500 nm;
s2: firstly, suspending an output end (3) of a signal source on an independent electrode array (5), connecting an input end (2) of the signal source with a non-independent electrode array (6), then dripping single-walled carbon nano tube dispersion liquid on the surface of a flexible substrate provided with an electrode pair array, enabling the electrode pair array and the output end (3) of the signal source to be simultaneously in the dispersion liquid, and then turning on a power supply, so that the single-walled carbon nano tube (7) is directionally suspended and assembled between the electrode pairs through alternating current coupled dielectrophoresis; the electrophoresis time of the alternating current coupling dielectrophoresis is 4-7 min;
s3: proportioning saturated Au electroplating solution, and utilizing regional selective electrodeposition to locally deposit and press and cover single-wall carbon nanotubes (7), so that two ends of the single-wall carbon nanotubes (7) are fixedly connected with an independent electrode array (5) and a non-independent electrode array (6) respectively;
the area selective electrodeposition method includes: firstly, dissolving 1.5g of iodine and 1.5g of potassium iodide in alcohol, then dissolving Au to be saturated at a constant temperature of 80 ℃ to prepare electroplating liquid, quantitatively dripping the electroplating liquid on a PI film (8) on which a single-walled carbon nanotube (7) is directionally deposited, taking an Au electrode pair as a working electrode, taking an Ag/AgCl electrode as a reference electrode, switching on a power supply to carry out electrodeposition, observing current at the same time, and continuously dripping the electroplating liquid if the current is less than 2.4 mA; after 3 minutes, the power supply is cut off, and the PI film (8) is taken out, washed by absolute ethyl alcohol and then dried and annealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910011530.9A CN109607469B (en) | 2019-01-07 | 2019-01-07 | Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910011530.9A CN109607469B (en) | 2019-01-07 | 2019-01-07 | Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109607469A CN109607469A (en) | 2019-04-12 |
| CN109607469B true CN109607469B (en) | 2024-04-12 |
Family
ID=66016221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910011530.9A Active CN109607469B (en) | 2019-01-07 | 2019-01-07 | Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109607469B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006048537A1 (en) * | 2006-10-13 | 2008-04-17 | Forschungszentrum Karlsruhe Gmbh | Nano-tube e.g. single wall carbon nano-tube, storing, arranging or adjusting device, for e.g. sensor, has electrode pairs fixed to cover layer, where electrodes stand opposite to each other and form gap that is smaller than length of tube |
| WO2009126952A2 (en) * | 2008-04-11 | 2009-10-15 | Northeastern University | Large scale nanoelement assembly method for making nanoscale circuit interconnects and diodes |
| CN102313818A (en) * | 2011-07-18 | 2012-01-11 | 清华大学 | Flexible pressure resistance flow field sensor based on single-wall carbon nanotube array and manufacturing method thereof |
| CN104157834A (en) * | 2014-08-26 | 2014-11-19 | 四川理工学院 | Application of spiral nanometer carbon fiber as lithium ion battery cathode material and preparation method of battery cathode |
| WO2015133387A1 (en) * | 2014-03-01 | 2015-09-11 | 昭和電工株式会社 | Carbon nanotube array, material, electronic appliance, process for producing carbon nanotube array, and process for producing field effect transistor |
| CN105609636A (en) * | 2016-02-17 | 2016-05-25 | 上海交通大学 | Field effect transistor employing directional single-walled carbon nanotube array as channel and manufacturing method |
| CN107037102A (en) * | 2017-04-12 | 2017-08-11 | 西南大学 | A kind of nano composite material and preparation method thereof, application |
| CN209536965U (en) * | 2019-01-07 | 2019-10-25 | 四川理工学院 | The hanging structure of single-walled carbon nanotube |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8847313B2 (en) * | 2008-11-24 | 2014-09-30 | University Of Southern California | Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates |
| KR101009442B1 (en) * | 2009-04-15 | 2011-01-19 | 한국과학기술연구원 | Method for fabrication of conductive film using conductive frame and conductive film |
| US20110183206A1 (en) * | 2009-12-02 | 2011-07-28 | Brigham Young University | Apparatus, system, and method for carbon nanotube templated battery electrodes |
| US20110204020A1 (en) * | 2010-02-19 | 2011-08-25 | Nthdegree Technologies Worldwide Inc. | Method of and Printable Compositions for Manufacturing a Multilayer Carbon Nanotube Capacitor |
| KR101223475B1 (en) * | 2010-07-30 | 2013-01-17 | 포항공과대학교 산학협력단 | Fabrication method for carbon nanotube film and sensor based carbon nanotube film |
| WO2020142770A1 (en) * | 2019-01-04 | 2020-07-09 | Atom Optoelectronics, Llc | Carbon nanotube based radio frequency devices |
-
2019
- 2019-01-07 CN CN201910011530.9A patent/CN109607469B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006048537A1 (en) * | 2006-10-13 | 2008-04-17 | Forschungszentrum Karlsruhe Gmbh | Nano-tube e.g. single wall carbon nano-tube, storing, arranging or adjusting device, for e.g. sensor, has electrode pairs fixed to cover layer, where electrodes stand opposite to each other and form gap that is smaller than length of tube |
| WO2009126952A2 (en) * | 2008-04-11 | 2009-10-15 | Northeastern University | Large scale nanoelement assembly method for making nanoscale circuit interconnects and diodes |
| CN102313818A (en) * | 2011-07-18 | 2012-01-11 | 清华大学 | Flexible pressure resistance flow field sensor based on single-wall carbon nanotube array and manufacturing method thereof |
| WO2015133387A1 (en) * | 2014-03-01 | 2015-09-11 | 昭和電工株式会社 | Carbon nanotube array, material, electronic appliance, process for producing carbon nanotube array, and process for producing field effect transistor |
| CN104157834A (en) * | 2014-08-26 | 2014-11-19 | 四川理工学院 | Application of spiral nanometer carbon fiber as lithium ion battery cathode material and preparation method of battery cathode |
| CN105609636A (en) * | 2016-02-17 | 2016-05-25 | 上海交通大学 | Field effect transistor employing directional single-walled carbon nanotube array as channel and manufacturing method |
| CN107037102A (en) * | 2017-04-12 | 2017-08-11 | 西南大学 | A kind of nano composite material and preparation method thereof, application |
| CN209536965U (en) * | 2019-01-07 | 2019-10-25 | 四川理工学院 | The hanging structure of single-walled carbon nanotube |
Non-Patent Citations (2)
| Title |
|---|
| Large-scale directed assembly of single-walled carbon nanotube devices by alternating current coupling dielectrophoresis;Fuzhong Zheng等;Carbon;693-699 * |
| 单壁碳纳米管环境传感器的简易组装与性能研究;周琪;功能材料与器件学报;第18卷(第5期);350-354 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109607469A (en) | 2019-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Heo et al. | Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities | |
| Polavarapu et al. | Towards low-cost flexible substrates for nanoplasmonic sensing | |
| Moreno-Moreno et al. | AFM manipulation of gold nanowires to build electrical circuits | |
| Lu et al. | Nanolithography of single-layer graphene oxide films by atomic force microscopy | |
| US7964143B2 (en) | Nanotube device and method of fabrication | |
| Zhou et al. | Simple fabrication of molecular circuits by shadow mask evaporation | |
| Ding et al. | One-dimensional Au–ZnO heteronanostructures for ultraviolet light detectors by a two-step dielectrophoretic assembly method | |
| CN107490570A (en) | The preparation method of surface enhanced Raman scattering substrate | |
| KR20200025116A (en) | Flexible graphene gas sensor, sensor array and manufacturing method thereof | |
| CN100519405C (en) | Micro or nano structure inertia sensor and its production method | |
| JPWO2008018390A1 (en) | Cell patterning method | |
| Enrico et al. | Scalable manufacturing of single nanowire devices using crack-defined shadow mask lithography | |
| KR101304340B1 (en) | Hydrogen consistency measuring equipment and its fabrication method | |
| KR20100094090A (en) | Method to assemble nano-structure on a substrate and nano-molecule device comprising nano-structure formed thereby | |
| CN109607469B (en) | Flexible sensor based on single-walled carbon nanotube suspension structure and manufacturing method thereof | |
| Deng et al. | Controllable fabrication of pyramidal silicon nanopore arrays and nanoslits for nanostencil lithography | |
| Regmi et al. | Suspended graphene sensor with controllable width and electrical tunability via direct-write functional fibers | |
| Chung et al. | Nanoscale gap fabrication by carbon nanotube-extracted lithography (CEL) | |
| Adam et al. | Recent advances in techniques for fabrication and characterization of nanogap biosensors: A review | |
| KR20180119151A (en) | Hydrogen gas sensor and Fabrication method of the same | |
| US7381316B1 (en) | Methods and related systems for carbon nanotube deposition | |
| CN209536965U (en) | The hanging structure of single-walled carbon nanotube | |
| KR20100030545A (en) | Metal-containing nanomembranes for molecular sensing | |
| US8262898B2 (en) | Nanotube position controlling method, nanotube position controlling flow path pattern and electronic element using nanotube | |
| CN102420244A (en) | One-dimensional metal/semiconductor nanometer heterojunction transistor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |