CN105609582B - 一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法 - Google Patents

一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法 Download PDF

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CN105609582B
CN105609582B CN201510867591.7A CN201510867591A CN105609582B CN 105609582 B CN105609582 B CN 105609582B CN 201510867591 A CN201510867591 A CN 201510867591A CN 105609582 B CN105609582 B CN 105609582B
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顾溢
张永刚
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Abstract

本发明涉及一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法，探测器以稀铋多量子阱作为吸收层，其中势阱层为p型稀铋III‑V族材料，势垒层为不掺杂的不含铋III‑V族材料。制备方法包括依次在衬底上生长p型高掺杂不含铋III‑V族缓冲层、稀铋多量子阱结构吸收层以及p型高掺杂不含铋III‑V族材料上接触层。本发明的探测器可以同时利用带间吸收和价带子带间吸收，增强对光的吸收，也可在太阳电池等利用光吸收的器件中进行应用，具有广泛的应用前景。

Description

一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备 方法
技术领域
本发明属于半导体探测器领域，特别涉及一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法。
背景技术
半导体探测器是用于探测光的半导体器件，根据所探测光波长的不同可以分为紫外探测器、可见光探测器、红外探测器等等。半导体探测器件的应用领域包含军事，工业，农业，医疗，气象，地球物理，资源勘查等，几乎覆盖了所有的人类科技领域。
半导体探测器采用的机理有许多种，根据其所采用的机理可以分为不同的多种类别。如光导型半导体探测器，利用pn结和肖特基结光伏特性的半导体光伏探测器，肖特基势垒光电管和金属-半导体-金属探测器，具有内部增益的雪崩光电二极管，上述这些探测器一般是吸收光后电子从半导体材料的价带跃迁到导带，利用的是带间跃迁。还有一些探测器利用的则是子带间跃迁，吸收光后电子在导带的不同子带间发生跃迁，或空穴在价带的不同子带间发生跃迁，如量子阱红外探测器、量子点红外探测器、量子级联探测器等。
电子型量子阱红外探测器由于电子的子带光跃迁对入射光的偏振状态具有很强的选择性，只有电矢量垂直于多量子阱生长面入射光才能被电子吸收完成在量子阱中的子带间跃迁，因此对光的耦合方式提出了要求。空穴型量子阱红外探测器的自旋轨道分裂带或轻重空穴价带能够直接吸收垂直入射的光线，完成在不同价带子带间的跃迁，因此无需光栅耦合。传统上，量子阱红外探测器由于利用的是载流子在子带间的跃迁，针对的均是波长较长的光的探测。在一般的半导体材料中，带间吸收和子带间吸收的波长一般是相差很大的，子带间吸收比带间吸收的能量小、波长长。例如，GaAs材料的带间吸收能量约为1.4eV(0.88μm)，而导带子带间吸收波长范围3-15μm。GaAs的自旋轨道分裂能为0.34eV，对应空穴从重空穴价带到自旋轨道分裂带的跃迁波长约为3.6μm。如果能有一种半导体材料制备的探测器能同时利用带间吸收和子带间吸收，则可以增强器件对光的吸收。
近年来，稀铋半导体材料因具有很多独特而重要的特性而引起了国际上越来越多的关注。人们发现当在III-V族材料中加入铋后会产生类似于稀氮材料的带隙收缩，对于GaAs1-xBix材料，1％的Bi引起的带隙收缩约为60-80meV。而铋元素主要对价带产生作用，对导带作用很小，空穴迁移率只是随着铋浓度的升高而略微降低，不会像稀氮材料那样大幅降低电子迁移率及产生大量非辐射复合中心。由于铋原子大的原子质量，稀铋半导体材料还具有大的自旋轨道分裂能，GaAs1-xBix材料中每1％的Bi引起的材料自旋轨道分裂能增加约为45meV。铋元素在普通生长温度下III-V族材料的生长中起表面活化剂的作用，有利于形成平整的界面，增强材料的光学特性。
发明内容
本发明所要解决的技术问题是提供一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法，该探测器以p型稀铋势阱层和不掺杂不含铋势垒层构成的量子阱结构作为吸收层，可增强光吸收，提高器件性能；探测器可吸收垂直入射的光，不需要采用光栅耦合，降低器件制备成本；结构和制备方法还可运用于同样进行光吸收的太阳电池制备中，增强太阳电池对光的吸收，提高太阳电池的光电转换效率，具有良好的应用前景。
本发明的一种结合带间和价带子带间吸收的稀铋量子阱探测器，所述探测器以稀铋多量子阱作为吸收层，其中势阱层为p型稀铋III-V族材料，势垒层为不掺杂的不含铋III-V族材料，势阱层p型掺杂浓度介于3×1017cm-3至5×1018cm-3之间。
所述势阱层中空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1相同。
所述稀铋多量子阱吸收层下方为p型高掺杂不含铋III-V族缓冲层，同时作为下接触层；吸收层上方为p型高掺杂不含铋III-V族材料上接触层。
所述上下接触层p型掺杂浓度大于3×1018cm-3。
本发明的一种结合带间和价带子带间吸收的稀铋量子阱探测器，包括如下步骤：
(1)在半绝缘或p型衬底上先生长一层p型高掺杂不含铋III-V族缓冲层，p型掺杂浓度大于3×1018cm-3，同时作为下接触层；
(2)在下接触层上方生长稀铋多量子阱吸收层，其中势阱层为p型稀铋III-V族材料，空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1相同，p型掺杂浓度介于3×1017cm-3至5×1018cm-3之间；势垒层为不掺杂的不含铋III-V族材料；量子阱数目为N，3≤N≤50，即依次生长N+1层势垒层和N层势阱层；
(3)在吸收层上方生长一层p型高掺杂不含铋III-V族上接触层，p型掺杂浓度大于3×1018cm-3；
(4)生长完成的样品采用常规腐蚀台面、在上下接触层淀积金属电极、封装制得探测器。
本发明的探测器结构稀铋势阱层中空穴从重空穴价带到自旋轨道分裂带的跃迁以及电子从价带到导带的跃迁具有一致的光吸收波长，在工作时同时利用了空穴从重空穴价带到自旋轨道分裂带的跃迁以及电子从价带到导带的跃迁，由于稀铋势阱层所具有的大的自旋轨道分裂能，这两种跃迁具有一致的光吸收波长，增强光吸收。
有益效果
本发明以p型稀铋势阱层和不掺杂不含铋势垒层构成的量子阱结构作为吸收层，可增强光吸收，提高器件性能；探测器可吸收垂直入射的光，不需要采用光栅耦合，降低器件制备成本；本发明的结构和制备方法还可运用于同样进行光吸收的太阳电池制备中，增强太阳电池对光的吸收，提高太阳电池的光电转换效率，具有良好的应用前景。
附图说明
图1是本发明提供的结合带间和价带子带间吸收的稀铋量子阱探测器的结构示意图；
图2是本发明提供的结合带间和价带子带间吸收的稀铋量子阱探测器的载流子跃迁示意图；
图3是实施例1GaAs0.90Bi0.10/GaAs量子阱探测器的结构示意图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
本实施例提供了一种结合带间和价带子带间吸收的稀铋量子阱探测器结构，如图1所示，包括衬底1上的p型高掺杂不含铋III-V族缓冲层2、稀铋多量子阱结构吸收层以及p型高掺杂不含铋III-V族材料上接触层5。其中稀铋多量子阱结构吸收层的势垒层为不掺杂的不含铋III-V族材料3，势阱层为p型稀铋III-V族材料4，量子阱数目为N(3≤N≤50)。势阱层p型掺杂浓度介于3×1017cm-3至5×1018cm-3之间，上下接触层p型掺杂浓度大于3×1018cm-3。所述的探测器在工作时同时利用了稀铋势阱层中空穴从重空穴价带到自旋轨道分裂带的跃迁以及电子从价带到导带的跃迁，由于稀铋势阱层所具有的大的自旋轨道分裂能，调节铋组分可使得空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1相同，增强探测器对光的吸收。
以GaAs衬底上的GaAs0.90Bi0.10/GaAs量子阱探测器的制备过程为例说明结合带间和价带子带间吸收的稀铋量子阱探测器及制备步骤，这些结构和制备步骤可以直接推广到其他类型的此类稀铋量子阱探测器，只要对材料组分、厚度等参数进行调整即可。具体结构和制备步骤如下：
(1)在半绝缘GaAs衬底上先生长1μm厚的GaAs p型高掺杂缓冲层，同时作为下接触层，掺杂浓度为5×1018cm-3；
(2)生长GaAsBi/GaAs多量子阱结构吸收层，势阱层材料选取合适的组分GaAs0.90Bi0.10，使空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1均为0.8eV，对应波长1.6μm；每层势阱层厚度较薄以确保材料处于应变状态，不产生多余的位错，这里选定为6nm厚；势阱层为p型掺杂浓度为1×1018cm-3；势垒层为30nm厚不掺杂GaAs；量子阱数目为30，即依次生长31层势垒层和30层势阱层；
(3)生长400nm厚p型高掺杂GaAs上接触层，掺杂浓度为5×1018cm-3，完成该探测器材料的生长，形成如图3所示的结构；
(4)生长完成的样品采用常规腐蚀台面、在上下接触层淀积金属电极、封装等工艺步骤制备成探测器器件。

Claims (5)

1.一种结合带间和价带子带间吸收的稀铋量子阱探测器，其特征在于：所述探测器以稀铋多量子阱作为吸收层，其中势阱层为p型稀铋III-V族材料，势垒层为不掺杂的不含铋III-V族材料，势阱层p型掺杂浓度介于3×1017cm-3至5×1018cm-3之间。
2.根据权利要求1所述的一种结合带间和价带子带间吸收的稀铋量子阱探测器，其特征在于：所述势阱层中空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1相同。
3.根据权利要求1所述的一种结合带间和价带子带间吸收的稀铋量子阱探测器，其特征在于：所述稀铋多量子阱吸收层下方为p型高掺杂不含铋III-V族缓冲层，同时作为下接触层；吸收层上方为p型高掺杂不含铋III-V族材料上接触层。
4.根据权利要求3所述的一种结合带间和价带子带间吸收的稀铋量子阱探测器，其特征在于：所述上接触层和下接触层p型掺杂浓度大于3×1018cm-3。
5.一种结合带间和价带子带间吸收的稀铋量子阱探测器，包括如下步骤：
(1)在半绝缘或p型衬底上先生长一层p型高掺杂不含铋III-V族缓冲层，高掺杂不含铋III-V族缓冲层的p型掺杂浓度大于3×1018cm-3，同时作为下接触层；
(2)在下接触层上方生长稀铋多量子阱吸收层，其中势阱层为p型稀铋III-V族材料，空穴从重空穴价带到自旋轨道分裂带的跃迁能量E2与电子从价带到导带的跃迁能量E1相同，稀铋多量子阱吸收层的p型掺杂浓度介于3×1017cm-3至5×1018cm-3之间；势垒层为不掺杂的不含铋III-V族材料；量子阱数目为N，3≤N≤50，即依次生长N+1层势垒层和N层势阱层；
(3)在吸收层上方生长一层p型高掺杂不含铋III-V族上接触层，高掺杂不含铋III-V族上接触层的p型掺杂浓度大于3×1018cm-3；
(4)生长完成的样品采用腐蚀台面、在上下接触层淀积金属电极、封装制得探测器。
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