CN105590873A - Bumping appearance controllable preparation method based on dry etching - Google Patents

Bumping appearance controllable preparation method based on dry etching Download PDF

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Publication number
CN105590873A
CN105590873A CN201510975404.7A CN201510975404A CN105590873A CN 105590873 A CN105590873 A CN 105590873A CN 201510975404 A CN201510975404 A CN 201510975404A CN 105590873 A CN105590873 A CN 105590873A
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dry etching
oxide
chf
featurebe
coating
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CN201510975404.7A
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CN105590873B (en
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李全宝
韩冬
姚海平
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Suzhou Industrial Park Co Ltd Of Industries Based On Nanotechnology Institute For Research And Technology
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Suzhou Industrial Park Co Ltd Of Industries Based On Nanotechnology Institute For Research And Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/116—Manufacturing methods by patterning a pre-deposited material
    • H01L2224/1161—Physical or chemical etching
    • H01L2224/11614—Physical or chemical etching by chemical means only

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a bumping appearance controllable preparation method based on dry etching, comprising the steps of: adhering an oxide layer dielectric film on a substrate; spin coating the oxide layer dielectric film with photoresist (PR), and performing exposure and development; baking the PR, allowing the PR to form a fixed appearance and thickness; employing RIE dry etching, and using a CF4 and CHF3 gas composition to etch the dielectric film; maintaining the gas total flow of CF4 and CHF3 not changed, and adjusting the proportion between CF4 and CHF3, thereby obtaining a certain selection ratio between oxide and PR; and through the selection ratio between oxide and PR, gradually consuming the PR of two shoulders under the condition of fixed PR appearance and thickness in a dielectric film etching process, thereby etching the dielectric film to form a regular trapezoid shape, and finally obtaining a bumping shape having a controllable bottom gradient appearance. The method is simple, and the prepared bumping has a controllable appearance, and great repeatability.

Description

The controlled preparation method of a kind of dry etching projection pattern
Technical field
The present invention relates to wafer projection technology field, relate in particular to the controlled system of a kind of dry etching projection patternPreparation Method.
Background technology
In recent years, along with the huge advance made of semiconductor technology, more and more harsher to the requirement of semiconductor technology,Constantly reducing of critical size, within corresponding dimensional accuracy demand must be strict controlled in certain limit, fromAnd strengthen the difficulty of technique. In semi-conductive manufacturing process, photoetching and dry to carve two of playing the part of importantRole.
Projection (Bumping) technique causes people's attention already as a kind of important semiconductor fabrication,It is widely applied in encapsulation technology and the manufacture of various electronic devices and sensor. Owing to answering at sensorWith in its distinctive pattern demand and required precision, very severe to photoetching and dry requirement of carving in manufacturing processCarve. In existing technology, adopt photoresist PR to retreat the first shape of pyrogenic process and have a certain degree, at RIEUnder dry etching, PR is loss gradually in the process of etching, so can form the gradient on projection both sides. ButPR retreats pyrogenic process and has some limitations, and determines the bottom angle of the pattern after etching after PR after annealing,When requiring for profile angle hour, anneal and can realize hardly by PR, to the requirement of photoresist alsoVery harsh, after PR annealing, the homogeneity of full wafer wafer is poor in addition, thereby causes pattern homogeneous after etchingProperty is poor, is difficult to reach technological requirement.
Existing technique mainly retreats pyrogenic process (PRreflow) by PR and realizes projection etch topography, after PRAnnealing method has some limitations, and determines bottom angle and the pass, top of the pattern after etching after PR after annealingKey size, when requiring for profile angle hour, is annealed and can be realized hardly by PR, to photoresistRequirement also very harsh, after PR annealing, the homogeneity of full wafer wafer is poor, thereby causes after etching in additionPattern homogeneity is poor. For one design projection pattern, the method need to be carried out multistep testing and measuring technology, research and developmentCycle is long, and PR cost is high, wastes time and energy, and efficiency is lower.
Because above-mentioned defect, the design people, actively research and innovation in addition, carves to founding a kind of dry methodThe controlled preparation method of erosion projection pattern, makes it have more the value in industry.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide that a kind of technology of preparing is simple, pattern is controlled,The controlled preparation method of dry etching projection pattern that repeatability is good.
The present invention proposes the controlled preparation method of a kind of dry etching projection pattern, it is characterized in that: comprise withLower step:
(1) on substrate, adhere to oxide layer (oxide) deielectric-coating;
(2) photoresist PR in spin coating on oxide layer deielectric-coating, then exposes, and develops;
(3) photoresist PR is toasted, make photoresist PR form fixing pattern and thickness;
(4) adopt RIE dry etching, use CF4And CHF3Gas group is incompatible carries out etching to deielectric-coating;
(5) keep CF4And CHF3Total gas flow rate constant, adjust CF4And CHF3The ratio of gas, fromAnd obtain the selection ratio of certain oxide and PR;
(6) by the selection ratio of specific oxide and PR, in deielectric-coating etching process, at PR pattern andIn the fixing situation of thickness, consume gradually the PR of two shoulders, present trapezoid thereby reach deielectric-coating etching,Finally obtain the controlled projection shape of bottom gradient pattern.
As the further improvement of the inventive method, the CF described in step (5)4And CHF3Gas always flowAmount is 90sccm.
As the further improvement of the inventive method, the CF described in step (5)4And CHF3Gas flow ratioThe scope of example is 90:0～40:40.
As the further improvement of the inventive method, the oxide obtaining in step (5) and the selection ratio of PRScope is: 1:1～2:1.
As the further improvement of the inventive method, in step (6), obtain the bottom gradient pattern of projection shapeControlled range is: 32 °～75 °.
As the further improvement of the inventive method, described CF4And CHF3Gas flow ratio be 90:0,85:5,80:10、70:20、60:30、40:40。
As the further improvement of the inventive method, the selection ratio of described oxide and PR is: 1:1,1.05:1、1.1:1、1.24:1、1.4:1、2:1。
As the further improvement of the inventive method, the bottom gradient pattern of described projection shape is: 32 °,38.7°、42°、51°、58°、75°。
By such scheme, the present invention at least has the following advantages: adjust crucial etching gas ratio by employingExample (CF4/CHF3), the membranous ratio of the selection to PR of dry etching, after PR after annealing, thickness and angleIn immutable situation, ensure projection top and the bottom live width size, realized the pattern requirement that process requirements reaches,Make up the low-angle problem that cannot realize because of PR after annealing. There is pattern controlled, repeated good simplificationTechnological process, has shortened the research and development time, has reduced cost, has improved efficiency.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technology of the present inventionMeans, and can being implemented according to the content of description, below with preferred embodiment of the present invention and coordinate attachedFigure is described in detail as follows.
Brief description of the drawings
Fig. 1 is by projection pattern schematic diagram after not removing photoresist and remove photoresist after the inventive method etching;
Fig. 2 adjusts CF by the inventive method4And CHF3The oxide obtaining after gas flow ratio and PR'sSelect the string diagram of ratio and the projection bottom gradient;
Fig. 3 adjusts CF by the inventive method4And CHF3Projection pattern scanning after gas flow ratio etchingElectron microscope picture.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail. WithLower embodiment is used for illustrating the present invention, but is not used for limiting the scope of the invention.
Embodiment: the controlled preparation method of a kind of dry etching projection pattern, is characterized in that: comprise followingStep:
(1) on substrate, adhere to oxide layer (oxide) deielectric-coating;
(2) photoresist PR in spin coating on oxide layer deielectric-coating, then exposes, and develops;
(3) photoresist PR is toasted, make photoresist PR form fixing pattern and thickness;
(4) adopt RIE dry etching, use CF4And CHF3Gas group is incompatible carries out etching to deielectric-coating;
(5) keep CF4And CHF3Total gas flow rate constant, adjust CF4And CHF3The ratio of gas, fromAnd obtain the selection ratio of certain oxide and PR;
(6) by the selection ratio of specific oxide and PR, in deielectric-coating etching process, at PR pattern andIn the fixing situation of thickness, consume gradually the PR of two shoulders, present trapezoid thereby reach deielectric-coating etching,Finally obtain the controlled projection shape of bottom gradient pattern.
CF described in step (5)4And CHF3Total gas flow rate be 90sccm.
CF described in step (5)4And CHF3The scope of gas flow ratio is 90:0～40:40.
The oxide obtaining in step (5) and the selection of PR than scope are: 1:1～2:1.
The bottom gradient pattern controlled range that obtains projection shape in step (6) is: 32 °～75 °.
By CF4And CHF3Gas flow ratio be adjusted into respectively 90:0,85:5,80:10,70:20,60:30,40:40. The oxide obtaining and the selection of PR ratio are respectively: 1:1,1.05:1,1.1:1,1.24:1,1.4:1,2:1. The bottom gradient pattern that obtains projection shape is respectively: 32 °, 38.7 °, 42 °, 51 °, 58 °,75 °. As shown in Table 1.
Table one
The above is only the preferred embodiment of the present invention, is not limited to the present invention, it should be pointed out thatFor those skilled in the art, do not departing under the prerequisite of the technology of the present invention principle, alsoCan make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.

Claims (8)

1. the controlled preparation method of dry etching projection pattern, is characterized in that: comprise the following steps:
(1) on substrate, adhere to oxide layer (oxide) deielectric-coating;
(2) photoresist PR in spin coating on oxide layer deielectric-coating, then exposes, and develops;
(3) photoresist PR is toasted, make photoresist PR form fixing pattern and thickness;
(4) adopt RIE dry etching, use CF4And CHF3Gas group is incompatible carries out etching to deielectric-coating;
(5) keep CF4And CHF3Total gas flow rate constant, adjust CF4And CHF3The ratio of gas, fromAnd obtain the selection ratio of certain oxide and PR;
(6) by the selection ratio of specific oxide and PR, in deielectric-coating etching process, at PR pattern andIn the fixing situation of thickness, consume gradually the PR of two shoulders, present trapezoid thereby reach deielectric-coating etching,Finally obtain the controlled projection shape of bottom gradient pattern.
2. the controlled preparation method of a kind of dry etching projection pattern according to claim 1, its featureBe: the CF described in step (5)4And CHF3Total gas flow rate be 90sccm.
3. the controlled preparation method of a kind of dry etching projection pattern according to claim 2, its featureBe: the CF described in step (5)4And CHF3The scope of gas flow ratio is 90:0～40:40.
4. the controlled preparation method of a kind of dry etching projection pattern according to claim 3, its featureBe: the oxide obtaining in step (5) and the selection of PR than scope are: 1:1～2:1.
5. the controlled preparation method of a kind of dry etching projection pattern according to claim 4, its featureBe: the bottom gradient pattern controlled range that obtains projection shape in step (6) is: 32 °～75 °.
6. the controlled preparation method of a kind of dry etching projection pattern according to claim 5, its featureBe: described CF4And CHF3Gas flow ratio is 90:0,85:5,80:10,70:20,60:30,40:40.
7. the controlled preparation method of a kind of dry etching projection pattern according to claim 6, its featureBe: the selection ratio of described oxide and PR is: 1:1,1.05:1,1.1:1,1.24:1,1.4:1,2:1.
8. the controlled preparation method of a kind of dry etching projection pattern according to claim 7, its featureBe: the bottom gradient pattern of described projection shape is: 32 °, 38.7 °, 42 °, 51 °, 58 °,75°。
CN201510975404.7A 2015-12-23 2015-12-23 A kind of preparation method of dry etching convex block morphology controllable Active CN105590873B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113484940A (en) * 2021-07-05 2021-10-08 苏州长光华芯光电技术股份有限公司 Micro lens array, preparation method thereof and vertical cavity surface emitting laser structure
CN115433924A (en) * 2022-08-05 2022-12-06 武汉光安伦光电技术有限公司 Communication laser and manufacturing method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06295877A (en) * 1993-04-08 1994-10-21 Sumitomo Metal Ind Ltd Formation of contact hole in semiconductor device
JPH0750292A (en) * 1993-08-06 1995-02-21 Fujitsu Ltd Taper etching method
US5670017A (en) * 1993-12-28 1997-09-23 Fujitsu Limited Method of manufacturing semiconductor device
JP2000183027A (en) * 1998-12-11 2000-06-30 Mitsubishi Electric Corp Manufacture of semiconductor device
CN1708838A (en) * 2002-10-31 2005-12-14 应用材料股份有限公司 Method of etching a silicon-containing dielectric material
JP2006041364A (en) * 2004-07-29 2006-02-09 Seiko Epson Corp Wiring forming method, and electronic-device manufacturing method
CN101826460A (en) * 2009-03-02 2010-09-08 中芯国际集成电路制造(上海)有限公司 Dry etching method of semiconductor component

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06295877A (en) * 1993-04-08 1994-10-21 Sumitomo Metal Ind Ltd Formation of contact hole in semiconductor device
JPH0750292A (en) * 1993-08-06 1995-02-21 Fujitsu Ltd Taper etching method
US5670017A (en) * 1993-12-28 1997-09-23 Fujitsu Limited Method of manufacturing semiconductor device
JP2000183027A (en) * 1998-12-11 2000-06-30 Mitsubishi Electric Corp Manufacture of semiconductor device
CN1708838A (en) * 2002-10-31 2005-12-14 应用材料股份有限公司 Method of etching a silicon-containing dielectric material
JP2006041364A (en) * 2004-07-29 2006-02-09 Seiko Epson Corp Wiring forming method, and electronic-device manufacturing method
CN101826460A (en) * 2009-03-02 2010-09-08 中芯国际集成电路制造(上海)有限公司 Dry etching method of semiconductor component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113484940A (en) * 2021-07-05 2021-10-08 苏州长光华芯光电技术股份有限公司 Micro lens array, preparation method thereof and vertical cavity surface emitting laser structure
CN115433924A (en) * 2022-08-05 2022-12-06 武汉光安伦光电技术有限公司 Communication laser and manufacturing method thereof
CN115433924B (en) * 2022-08-05 2023-10-10 武汉光安伦光电技术有限公司 Communication laser and manufacturing method thereof

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