CN115433924B - Communication laser and manufacturing method thereof - Google Patents
Communication laser and manufacturing method thereof Download PDFInfo
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- CN115433924B CN115433924B CN202210936712.9A CN202210936712A CN115433924B CN 115433924 B CN115433924 B CN 115433924B CN 202210936712 A CN202210936712 A CN 202210936712A CN 115433924 B CN115433924 B CN 115433924B
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- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
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Abstract
The utility model relates to the technical field of communication chip semiconductors, in particular to a communication laser and a manufacturing method thereof, comprising the following steps: s1, growing a thick dielectric film limiting layer with the thickness of more than 2um on the Wafer front surface by adopting a PECVD method, wherein the thick dielectric film limiting layer comprises Si which is sequentially arranged from bottom to top 3 N 4 Film layer, gradient SiNO x Film layer, siO 2 Film layer, gradient SiON x Film layer, si 3 N 4 A film layer; s2, performing photoetching, and then adopting an RIE dry etching process to complete the manufacture of the thick dielectric film limiting layer pattern. The utility model grows Si with the thickness of more than 2um on the Wafer front surface 3 N 4 Gradient SiNO x /SiO 2 Gradient SiON x /Si 3 N 4 The thick dielectric film limiting layer can improve limiting factors of the side dielectric film of the quantum well on the front side of the chip, the stroke and scattering of photons are increased through the thick dielectric layer, the effect of reducing noise is achieved, and the bit error rate of data transmission is reduced, so that the bandwidth is improved; the thick dielectric film limiting layer has strong protection on the chip, and provides a direction for further improving the service life of the chip.
Description
Technical Field
The utility model relates to the technical field of communication chip semiconductors, in particular to a communication laser and a manufacturing method thereof.
Background
With the market development of communication laser semiconductors, digital products are updated, the electronic products are experienced with high intelligence, the requirements of people on communication transmission of high-capacity and high-speed information are higher and higher, the requirements of network high bandwidth are higher and higher, the communication laser is used as a core component of a communication system, and a high-speed and high-bandwidth laser chip is improved. At present, the main flow direction for improving the modulation bandwidth of the communication laser is in the direction of capacitance reduction and cavity shrinkage, but along with the massive optimization of the industry, the direction gradually reaches the bottleneck, and the improvement of carrier gain and photon density is higher in the design and manufacture of chip materials, and is time-consuming and labor-consuming, so that a new communication laser and a manufacturing method thereof are needed to be designed so as to further improve the chip bandwidth.
Disclosure of Invention
The utility model aims to provide a communication laser and a manufacturing method thereof, which can at least solve part of defects in the prior art.
In order to achieve the above object, the technical scheme of the present utility model is a method for manufacturing a communication laser, comprising the following steps:
s1, growing a thick dielectric film limiting layer with the thickness of more than 2um on the Wafer front surface by adopting a PECVD method, wherein the thick dielectric film limiting layer comprises Si which is sequentially arranged from bottom to top 3 N 4 Film layer, gradient SiNO x Film layer, siO 2 Film layer, gradient SiON x Film layer, si 3 N 4 A film layer;
s2, performing photoetching, and then adopting an RIE dry etching process to complete the manufacture of the thick dielectric film limiting layer pattern.
Further, the Si is 3 N 4 The thickness of the film layer is 0.15-0.3 um, the gradient SiNO x The thickness of the film layer is 0.4-0.6 um, the SiO 2 The thickness of the film layer is 0.8-1.2 um, the gradient SiON x The thickness of the film layer is 0.4-0.6 um; the gradient SiNO x Film layer and gradient SiON x X in the film layer is gradually increased.
Further, the specific method of step S1 is as follows:
s11, carrying out cleaning pretreatment on Wafer of a thick dielectric film limiting layer to be grown, then placing the Wafer into PECVD equipment, vacuumizing, and heating a cavity to 250-350 ℃;
s12, carrying out plasma nitriding treatment on the Wafer front surface of the grown thick dielectric film limiting layer after reaching the vacuum degree;
s13, firstly growing a layer of Si on the Wafer front surface treated in the step S12 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 ；
S14, after the growth process of the step S13 is completed, continuing to grow the gradient SiNO x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S15, after the growth process of the step S14 is completed, continuing to grow a layer of SiO 2 A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S16, after the growth process of the step S15 is completed, continuing to grow the gradient SiON x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S17, after the growth process of the step S16 is completed, a layer of Si is grown at last 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 The method comprises the steps of carrying out a first treatment on the surface of the And finishing the growth of the thick dielectric film limiting layer.
Further, the process conditions of the plasma nitriding in step S12 include: vacuum degree 0.9-1.0mTorr, N 2 The flow is 800-1200 sccm, the plasma power is 25-35W, and the time is 4-8 min.
Further, the growth gradient Sino in step S14 x The process conditions of the film layer comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 400 to 800sccm by taking 80 to 120sccm as a step, and each step lasts for 1 to 3 minutes; the process conditions for growing the gradient SiOx film layer in the step S16 comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 800 to 400sccm by 80 to 120sccm for 1 to 3 minutes.
Further, si is grown in step S13 and step 17 3 N 4 The process conditions of the film layer comprise: siH (SiH) 4 600-900 sccm of gas flow, NH 3 The gas flow of the gas is 40-60 sccm, the plasma power is 25-35W, and the time is 8-12 min; growth of SiO in step S15 2 The process conditions of the film layer comprise: siH (SiH) 4 The gas flow rate of (1) is 80-120 sccm, N 2 The gas flow of O is 700-900 sccm, the plasma power is 25-35W, and the time is 10-15 min.
Further, the specific method of step S2 is as follows:
s21, placing a product to be subjected to RIE dry etching after photoetching into RIE equipment for vacuumizing, wherein the temperature of a cavity is room temperature;
s22, after reaching the process vacuum degree, introducing a reaction gas CHF 3 And O 2 Etching for 18-25 min;
s23, after the etching process of the step S22 is completed, closing the gas, and introducing the reaction gas CF 4 And O 2 Etching for 8-15 min;
s24, after the etching process of the step S23 is completed, repeating the step S21 and the step S22;
s25, after the alternate etching process of the step S24 is completed, closing the gas, and introducing a reaction gas CHF 3 And O 2 Etching for 8-15 min; and (5) finishing the manufacture of the thick dielectric film limiting layer graph.
Further, the process conditions in step S22 and step S25 are: CHF and CHF 3 50-80 sccm of gas flow rate, O 2 The gas flow is 5-10 sccm, and the plasma power is 150-250W.
Further, the process conditions in step S23 are: CF (compact flash) 4 Is 40 to 60ssccm, O 2 The gas flow is 4-8 sccm, and the plasma power is 150-250W.
The utility model also provides a communication laser which is manufactured by adopting the manufacturing method.
Compared with the prior art, the utility model has the following beneficial effects:
(1) The utility model is characterized in that the Wafer front surface grows to be thickSi of 2um or more 3 N 4 Gradient SiNO x /SiO 2 Gradient SiON x /Si 3 N 4 The thick dielectric film limiting layer can improve limiting factors of the side dielectric film of the quantum well on the front side of the chip, the stroke and scattering of photons are increased through the thick dielectric layer, the effect of reducing noise is achieved, and the bit error rate of data transmission is reduced, so that the bandwidth is improved; the thick dielectric film limiting layer has strong protectiveness to the chip itself, and provides a direction for further improving the service life of the chip;
(2) The method can fully reduce the film stress of the thick dielectric film limiting layer, prevent chip abnormality caused by the phenomena of chapping and bubbling of the thick dielectric film limiting layer with the thickness of more than 2um, and the thick dielectric film limiting layer is intact through a superalloy destructive power experiment;
(3) The thick dielectric film limiting layer of the utility model adopts Si 3 N 4 Gradient SiNO x /SiO 2 Gradient SiON x /Si 3 N 4 Wherein two gradient materials Sino x And SiON x Wherein x is gradually increased, and two gradient materials are adopted to mainly neutralize the SiO of the thick dielectric film limiting layer 2 Effect of internal stress, underlayer and surface Si 3 N 4 The effect of neutralizing the compressive stress is also achieved, and the effect of protecting the integrity of the film is achieved; PECVD adopts gradient material and SiO 2 And Si (Si) 3 N 4 The combination of the two layers can prevent the defects of rhagadia, bulge and the like of the limiting layer caused by too thick dielectric film thickness and too large stress;
(4) According to the PECVD nitriding process, plasma nitrogen ions are injected into the front surface of the chip for a long time under high temperature in a high-energy bombardment mode to achieve nitriding, part of nitrogen ions are combined with the outer layer of the surface of the semiconductor, the forbidden band width of the semiconductor is improved, minority carrier recombination is reduced, photon density is prevented from being reduced, and the modulation bandwidth limit is improved;
(5) The RIE dry etching process is different from normal etching, and because of the unique solidity of the photoresist, the photoresist is etched with a thicker limiting layer for a longer time, and the photoresist is carbonized and deformed, so that the size of a chip pattern is abnormal and the photoresist cannot be removed, and the utility model adopts CHF 3 And CF (compact F) 4 The two gases are combined with certain proportion of O 2 The method for alternately and repeatedly etching the thick dielectric film limiting layer can effectively prevent photoresist carbonization caused by long-time etching, and solves the problem that the photoresist carbonization size deformation and photoresist removal are difficult caused by the fact that the dielectric film cannot be continuously etched for a long time by RIE;
(6) The thick dielectric film limiting layer also has the function of replacing the existing BCB process, the organic thick BCB layer has the function of reducing parasitic capacitance under the electrode, the thick dielectric film limiting layer also has the function of reducing parasitic capacitance instead of the BCB layer, meanwhile, the photoetching process manufacturing flow is simplified, the abnormal rate is reduced, the electrode cracking risk of the organic BCB material in the process is reduced, the cost is saved, and the efficiency is improved;
(7) The utility model is applicable to all 10G, 25G DFB (distributed feedback) and EML (electro absorption modulation) semiconductor lasers with different communication far infrared wave bands of 1200 nm-1700 nm.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a PECVD thick dielectric film confinement layer of the present utility model;
FIG. 2 is a schematic representation of the RIE dry etch of the present utility model;
FIG. 3 is a graph of the effects of PECVD and RIE dry etching of 10G thick dielectric film confinement layer products;
FIG. 4 is a graph of modulation bandwidth versus control for experimental and control groups;
fig. 5 is a graph 1000H of long term aging of a thick dielectric film confinement layer.
In the figure: 100. wafer; 110. a laser quantum well; 120. si (Si) 3 N 4 A film layer; 130. gradient material SiNO x SiON x With SiO 2 Is a composite film layer; 140. RIE etching gas.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The embodiment provides a manufacturing method of a communication laser, which comprises the following steps:
s1, growing a thick dielectric film limiting layer with the thickness of more than 2um on the front surface of Wafer by adopting a PECVD method, wherein the thick dielectric film limiting layer comprises Si which is sequentially arranged from bottom to top 3 N 4 Film layer, gradient SiNO x Film layer, siO 2 Film layer, gradient SiON x Film layer, si 3 N 4 A film layer;
s2, performing photoetching, and then adopting an RIE dry etching process to complete the manufacture of the thick dielectric film limiting layer pattern.
The PECVD process of growing the thick dielectric film limiting layer and the RIE dry etching process of the thick dielectric film limiting layer can improve the modulation bandwidth on the high-speed chip. In the embodiment, the thickness of the thick dielectric film limiting layer is more than 2um, the phenomena of chap and bubbling caused by stress release are avoided, and the thick dielectric film limiting layer is intact through a superalloy destructive power experiment.
As an optimization scheme of the embodiment, the Si 3 N 4 The thickness of the film layer is 0.15-0.3 um, the gradient SiNO x The thickness of the film layer is 0.4-0.6 um, the SiO 2 The thickness of the film layer is 0.8-1.2 um, the gradient SiON x The thickness of the film layer is 0.4-0.6 um; the gradient SiNO x Film layer and gradient SiON x X in the film layer is gradually increased. In SiO 2 Gradient SiNO is adopted at two sides of the film layer x And gradient SiON x The material can neutralize thicker SiO 2 Effect of stress in the film layer.
As an optimization scheme of this embodiment, the specific method of step S1 is as follows:
s11, carrying out cleaning pretreatment on Wafer of a thick dielectric film limiting layer to be grown, then placing the Wafer into PECVD equipment, vacuumizing, and heating a cavity to 250-350 ℃;
s12, carrying out plasma nitriding treatment on the Wafer front surface of the grown thick dielectric film limiting layer after reaching the vacuum degree;
s13, firstly growing a layer of Si on the Wafer front surface treated in the step S12 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 ；
S14, after the growth process of the step S13 is completed, continuing to grow the gradient SiNO x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S15, after the growth process of the step S14 is completed, continuing to grow a layer of SiO 2 A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S16, after the growth process of the step S15 is completed, continuing to grow the gradient SiON x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S17, after the growth process of the step S16 is completed, a layer of Si is grown at last 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 The method comprises the steps of carrying out a first treatment on the surface of the And finishing the growth of the thick dielectric film limiting layer.
Further, the process conditions of the plasma nitriding in step S12 include: vacuum degree 0.9-1.0mTorr, N 2 The flow is 800-1200 sccm, the plasma power is 25-35W, and the time is 4-8 min. The plasma nitriding process can improve the forbidden bandwidth of the semiconductor, reduce the loss of minority carriers and improve the performance.
Further, the growth gradient Sino in step S14 x The process conditions of the film layer comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 400 to 800sccm by taking 80 to 120sccm as a step, and each step lasts for 1 to 3 minutes; growth gradient SiON in step S16 x The process conditions of the film layer comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 800 to 400sccm by 80 to 120sccm, and each step is 1 to the whole3min。
Further, si is grown in step S13 and step 17 3 N 4 The process conditions of the film layer comprise: siH (SiH) 4 600-900 sccm of gas flow, NH 3 The gas flow of the gas is 40-60 sccm, the plasma power is 20-35W, and the time is 8-12 min; growth of SiO in step S15 2 The process conditions of the film layer comprise: siH (SiH) 4 The gas flow rate of (1) is 80-120 sccm, N 2 The gas flow of O is 700-900 sccm, the plasma power is 20-35W, and the time is 10-15 min.
As an optimization scheme of this embodiment, the specific method of step S2 is as follows:
s21, placing a product to be subjected to RIE dry etching after photoetching into RIE equipment for vacuumizing, wherein the temperature of a cavity is room temperature;
s22, after reaching the process vacuum degree, introducing a reaction gas CHF 3 And O 2 Etching for 18-25 min;
s23, after the etching process of the step S22 is completed, closing the gas, and introducing the reaction gas CF 4 And O 2 Etching for 8-15 min;
s24, after the etching process of the step S23 is completed, repeating the step S21 and the step S22;
s25, after the alternate etching process of the step S24 is completed, closing the gas, and introducing a reaction gas CHF 3 And O 2 Etching for 8-15 min; and (5) finishing the manufacture of the thick dielectric film limiting layer graph.
CHF is adopted in the RIE dry etching 3 And CF (compact F) 4 The two gases are combined with certain proportion of O 2 The thick dielectric film limiting layers are etched alternately and repeatedly, so that photoresist carbonization caused by long-time etching can be effectively prevented.
Further, the process conditions in step S22 and step S25 are: CHF and CHF 3 50-80 sccm of gas flow rate, O 2 The gas flow is 5-10 sccm, and the plasma power is 150-250W. The process vacuum in step S22 is 0.9-1.0mTorr.
Further, the process conditions in step S23 are: CF (compact flash) 4 Is 40-60 sccm, O 2 The gas flow is 4-8 sccm, and the plasma power is 150-250W.
The following process of growing a thick dielectric film limiting layer and RIE dry etching the thick dielectric film limiting layer in combination with 10g 1310nm DFB specific product is illustrated in detail on a high-speed chip to improve the modulation bandwidth, and the following structures formed by the following embodiments are shown in fig. 1 and 2 by taking a DFB electroabsorption modulation distributed feedback laser with a communication band of 10g 1310nm as an example.
The specific implementation steps are as follows:
step 1): carrying out cleaning pretreatment on Wafer of a thick dielectric film limiting layer to be grown by PECVD, then placing the Wafer into PECVD equipment for vacuumizing, and heating a cavity to 250-350 ℃;
step 2): after reaching the vacuum degree of 0.9-1.0mTorr, carrying out plasma nitriding treatment on the Wafer front surface to be plated, and carrying out PECVD nitriding process: n (N) 2 The flow is 1000sccm, the plasma power is 30W, and the time is 5min;
step 3): the Wafer to be grown treated in step 2) is first grown with a layer of Si 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 ，SiH 4 800sccm, NH 3 The gas flow rate of (2) is 50sccm, the plasma power is 30W, the time is 10min, si 3 N 4 The thickness of the film layer is 300nm;
step 4): after the growth process of step 3) is completed, continuing to grow the gradient SiNO x A film layer, wherein the reaction gas is N 2 O and SiH 4 The flow of N2O is unchanged and SiH is maintained in the process 4 The gas is from 400 to 800sccm, 100sccm is taken as a step, 2min is taken at each step, and SiNO is taken x The thickness is 500nm;
step 5): after the growth process of the step 4) is completed, a layer of SiO is continuously grown 2 A film layer, wherein the reaction gas is N 2 O and SiH 4 ，SiH 4 100sccm, N 2 The gas flow of O is 800sccm, the plasma power is 30W, the time is 12min, and SiO 2 The thickness of the film layer is 1um;
step 6): after the growth process of step 5) is completed, continuing to grow the gradient SiON x A film layer, wherein the reaction gas is N 2 O and SiH 4 Process for preparing a composite materialIn-process N 2 Constant O flow, siH 4 The gas is from 800sccm to 400sccm, 100sccm is taken as a step, 2min of SiON is taken at each step x The thickness is 500nm;
step 7): after the process to be grown in step 6), a layer of Si is grown at last 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 ，SiH 4 800sccm, NH 3 The gas flow rate of (2) is 50sccm, the plasma power is 30W, the time is 10min, si 3 N 4 The thickness of the film layer is 300nm, and all positive film PECVD processes are completed at the moment;
step 8): placing the thick dielectric film limiting layer to be subjected to RIE dry etching after photoetching into RIE equipment for vacuumizing, wherein the temperature of a cavity is room temperature;
step 9): after reaching the process vacuum degree of 0.9-1.0mTorr, introducing a reaction gas CHF 3 And O 2 ，CHF 3 70sccm, O 2 The gas flow is 8sccm, and the plasma power is 200W for etching for 20min;
step 10): after the etching process of step 9) is completed, the gas is turned off and the reaction gas CF is introduced 4 And O 2 ，CF 4 50sccm, O 2 The gas flow is 5sccm, and the plasma power is 200W for etching for 10min;
step 11): repeating steps 9) and 10) after the etching process of step 3) is completed;
step 12): after the alternate etching process of step 4) is completed, the gas is turned off and the reaction gas CHF is introduced 3 And O 2 Etching for 10min, and completing all front etching processes.
In order to understand in detail the advantages of the laser manufacturing method of growing the thick dielectric film confining layer by PECVD and dry etching the thick dielectric film confining layer by RIE of this embodiment on the high-rate chip, detailed process analysis and performance test are performed as follows.
1) High rate modulation bandwidth analysis
The experiments were divided into two groups:
the first group of experiments was the experimental group: the conditions are that the laser preparation method adopting PECVD to grow the thick dielectric film limiting layer and RIE dry etching the thick dielectric film limiting layer of the embodiment is adopted, the thick dielectric film limiting layer replaces the BCB scheme, and the chip randomly selects 20pcs good products;
the second group of experiments was a control group: the conditions are normal technological process, including electrode BCB process, and the chip selects 20pcs for good product randomly.
The analysis method comprises the following steps: in order to ensure contrast, we choose the same Wafer source Wafer, split into two, half-Wafer adopts the method of this embodiment, half-Wafer adopts normal technology, and simultaneously the Wafer flows, each 20pcs chip that picks up carries out high temperature modulation bandwidth test, experimental condition is 85 ℃, 50mA, experimental result is as shown in figure 4, can find that the modulation bandwidth of thick dielectric film limiting layer compares normal technology, bandwidth level difference is not big, but the bandwidth of thick dielectric film limiting layer slightly promotes, it has demonstrated that thick dielectric film limiting layer promotes the limiting factor of chip front dielectric film, increase photon's stroke and scattering through thick dielectric film limiting layer reach the effect of reducing noise, reduce data transmission's error rate promotion bandwidth, nitriding treatment before PECVD grows thick dielectric film limiting layer has also promoted semiconductor's forbidden bandwidth simultaneously, reduce photon's loss, guarantee photon density promotion bandwidth.
2) Long term aging 1000H test
The analysis method comprises the following steps: randomly screening 20pcs qualified chips from a product adopting the thick dielectric film limiting layer process of the embodiment, and performing a long-term aging 1000H experiment, wherein the aging experiment condition is that the temperature is 85 ℃, the current is 85mA, the threshold Ith and the initial change rate exceed 10%, and judging that the chips are invalid, wherein the experiment is shown in figure 5; from the experimental results, it can be seen that the long-term reliability of the product is not deteriorated by adopting the thick dielectric film limiting layer process of the embodiment, and the long-term aging 1000H is not abnormal.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the utility model.
Claims (9)
1. A method of fabricating a communication laser, comprising the steps of:
s1, growing a thick dielectric film limiting layer with the thickness of more than 2 mu m on the front surface of a wafer by adopting a PECVD method, wherein the thick dielectric film limiting layer comprises Si which is sequentially arranged from bottom to top 3 N 4 Film layer, gradient SiNO x Film layer, siO 2 Film layer, gradient SiON x Film layer, si 3 N 4 A film layer;
s2, performing photoetching, and then adopting an RIE dry etching process to complete the manufacture of the thick dielectric film limiting layer pattern;
the Si is 3 N 4 The thickness of the film layer is 0.15-0.3 mu m, and the gradient SiNO x The thickness of the film layer is 0.4-0.6 mu m, and the SiO is prepared by the following steps 2 The thickness of the film layer is 0.8-1.2 mu m, and the gradient SiON x The thickness of the film layer is 0.4-0.6 mu m; the gradient SiNO x Film layer and gradient SiON x X in the film layer is gradually increased.
2. A method of fabricating a communication laser as claimed in claim 1, wherein: the specific method of step S1 is as follows:
s11, cleaning and pre-treating a wafer to be grown with a thick dielectric film limiting layer, then placing the wafer into PECVD equipment, vacuumizing, and heating a cavity to 250-350 ℃;
s12, after reaching the vacuum degree, carrying out plasma nitriding treatment on the front surface of the wafer on which the thick dielectric film limiting layer grows;
s13, firstly growing a layer of Si on the front surface of the wafer processed in the step S12 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 ；
S14, after the growth process of the step S13 is completed, continuing to grow the gradient SiNO x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S15, after the growth process of the step S14 is completed, continuing to grow a layer of SiO 2 A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S16, after the growth process of the step S15 is completed, continuing to grow the gradient SiON x A film layer, wherein the reaction gas is N 2 O and SiH 4 ；
S17, after the growth process of the step S16 is completed, a layer of Si is grown at last 3 N 4 A film layer, wherein the reaction gas is SiH 4 And NH 3 The method comprises the steps of carrying out a first treatment on the surface of the And finishing the growth of the thick dielectric film limiting layer.
3. A method of fabricating a communication laser as claimed in claim 2, wherein: the process conditions for plasma nitriding in step S12 include: vacuum degree 0.9-1.0mTorr, N 2 The flow is 800-1200 sccm, the plasma power is 25-35W, and the time is 4-8 min.
4. A method of fabricating a communication laser as claimed in claim 2, wherein: growth gradient Sino in step S14 x The process conditions of the film layer comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 400 to 800sccm by taking 80 to 120sccm as a step, and each step lasts for 1 to 3 minutes; growth gradient SiON in step S16 x The process conditions of the film layer comprise: keep N 2 Constant O flow, siH 4 The gas is stepped from 800 to 400sccm by 80 to 120sccm for 1 to 3 minutes.
5. The method for manufacturing a communication laser according to claim 4, wherein: growth of Si in step S13 and step 17 3 N 4 The process conditions of the film layer comprise: siH (SiH) 4 600-900 sccm of gas flow, NH 3 The gas flow of the gas is 40-60 sccm, the plasma power is 20-35W, and the time is 8-12 min; growth of SiO in step S15 2 The process conditions of the film layer comprise: siH (SiH) 4 The gas flow rate of (1) is 80-120 sccm, N 2 The gas flow of O is 700-900 sccm, the plasma power is 20-35W, and the time is 10-15 min.
6. The method of manufacturing a communication laser according to claim 1, wherein the specific method of step S2 is as follows:
s21, placing a product to be subjected to RIE dry etching after photoetching into RIE equipment for vacuumizing, wherein the temperature of a cavity is room temperature;
s22, after reaching the process vacuum degree, introducing a reaction gas CHF 3 And O 2 Etching for 18-25 min;
s23, after the etching process of the step S22 is completed, closing the gas, and introducing the reaction gas CF 4 And O 2 Etching for 8-15 min;
s24, after the etching process of the step S23 is completed, repeating the step S21 and the step S22;
s25, after the alternate etching process of the step S24 is completed, closing the gas, and introducing a reaction gas CHF 3 And O 2 Etching for 8-15 min; and (5) finishing the manufacture of the thick dielectric film limiting layer graph.
7. The method for manufacturing a communication laser according to claim 6, wherein: the process conditions in step S22 and step S25 are: CHF and CHF 3 50-80 sccm of gas flow rate, O 2 The gas flow is 5-10 sccm, and the plasma power is 150-250W.
8. The method for manufacturing a communication laser according to claim 6, wherein: the process conditions in step S23 are: CF (compact flash) 4 Is 40-60 sccm, O 2 The gas flow is 4-8 sccm, and the plasma power is 150-250W.
9. A communication laser, characterized by: the communication laser is manufactured by the manufacturing method of any one of claims 1-8.
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