CN105590824B - 一种等离子体加工设备 - Google Patents

一种等离子体加工设备 Download PDF

Info

Publication number
CN105590824B
CN105590824B CN201410557082.XA CN201410557082A CN105590824B CN 105590824 B CN105590824 B CN 105590824B CN 201410557082 A CN201410557082 A CN 201410557082A CN 105590824 B CN105590824 B CN 105590824B
Authority
CN
China
Prior art keywords
material coating
cavity
plasma
permeability material
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410557082.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN105590824A (zh
Inventor
刘季霖
左涛涛
吴狄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
Original Assignee
Advanced Micro Fabrication Equipment Inc Shanghai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fabrication Equipment Inc Shanghai filed Critical Advanced Micro Fabrication Equipment Inc Shanghai
Priority to CN201410557082.XA priority Critical patent/CN105590824B/zh
Priority to TW103145589A priority patent/TW201615887A/zh
Publication of CN105590824A publication Critical patent/CN105590824A/zh
Application granted granted Critical
Publication of CN105590824B publication Critical patent/CN105590824B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN201410557082.XA 2014-10-20 2014-10-20 一种等离子体加工设备 Active CN105590824B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410557082.XA CN105590824B (zh) 2014-10-20 2014-10-20 一种等离子体加工设备
TW103145589A TW201615887A (zh) 2014-10-20 2014-12-25 電漿體加工設備

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410557082.XA CN105590824B (zh) 2014-10-20 2014-10-20 一种等离子体加工设备

Publications (2)

Publication Number Publication Date
CN105590824A CN105590824A (zh) 2016-05-18
CN105590824B true CN105590824B (zh) 2017-11-03

Family

ID=55407859

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410557082.XA Active CN105590824B (zh) 2014-10-20 2014-10-20 一种等离子体加工设备

Country Status (2)

Country Link
CN (1) CN105590824B (tr)
TW (1) TW201615887A (tr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106937475A (zh) * 2015-12-31 2017-07-07 中微半导体设备(上海)有限公司 等离子体处理装置
KR102330098B1 (ko) * 2017-04-24 2021-11-23 주성엔지니어링(주) 기판 처리 장치
CN109994359B (zh) * 2017-12-29 2022-11-18 中微半导体设备(上海)股份有限公司 一种等离子体处理腔室
CN108768335A (zh) * 2018-05-25 2018-11-06 张琴 气密性声表面波元件封装结构及制作方法
CN110231063A (zh) * 2019-05-30 2019-09-13 江阴市富仁高科股份有限公司 一种检测油气的气体流量计
CN113808898B (zh) * 2020-06-16 2023-12-29 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法
TWI820374B (zh) * 2020-12-23 2023-11-01 台灣積體電路製造股份有限公司 感應耦合電漿設備及其操作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1117889C (zh) * 1997-04-02 2003-08-13 日本电气株式会社 等离子体增强化学汽相淀积装置
CN1907514A (zh) * 2005-03-22 2007-02-07 巨佰－雪莱公司 具有用于磁起动开关的窗口的磁屏蔽aimd外壳
TW201130033A (en) * 2010-02-25 2011-09-01 Taiwan Semiconductor Mfg Semiconductor manufacturing apparatus and method for manufacturing a semiconductor processing apparatus
CN202164352U (zh) * 2011-06-10 2012-03-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种半导体加工设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7573000B2 (en) * 2003-07-11 2009-08-11 Lincoln Global, Inc. Power source for plasma device
US20060075967A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Magnetic-field concentration in inductively coupled plasma reactors
TW200712236A (en) * 2005-09-23 2007-04-01 Atomic Energy Council Device of generating magnetron RF plasma source
FR2904178B1 (fr) * 2006-07-21 2008-11-07 Centre Nat Rech Scient Dispositif et procede de production et/ou de confinement d'un plasma
TWI456082B (zh) * 2010-03-26 2014-10-11 Univ Nat Sun Yat Sen 磁控式電漿濺鍍機
US20140262044A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Mu metal shield cover

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1117889C (zh) * 1997-04-02 2003-08-13 日本电气株式会社 等离子体增强化学汽相淀积装置
CN1907514A (zh) * 2005-03-22 2007-02-07 巨佰－雪莱公司 具有用于磁起动开关的窗口的磁屏蔽aimd外壳
TW201130033A (en) * 2010-02-25 2011-09-01 Taiwan Semiconductor Mfg Semiconductor manufacturing apparatus and method for manufacturing a semiconductor processing apparatus
CN202164352U (zh) * 2011-06-10 2012-03-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种半导体加工设备

Also Published As

Publication number Publication date
TWI513856B (tr) 2015-12-21
TW201615887A (zh) 2016-05-01
CN105590824A (zh) 2016-05-18

Similar Documents

Publication Publication Date Title
CN105590824B (zh) 一种等离子体加工设备
TW201500184A (en) Corrosion resistant aluminum coating on plasma chamber components
WO2012027009A3 (en) Gas distribution showerhead with high emissivity surface
JP2013140950A5 (tr)
PH12020500571A1 (en) Solar control coatings and methods of forming solar control coatings
TW201447968A (zh) 等離子體裝置內具有氧化釔包覆層的部件及其製造方法
WO2014127160A3 (en) Fabricating porous metallic coatings via electrodeposition and compositions thereof
US20150047563A1 (en) Patterned processing kits for material processing
US8336971B2 (en) Enclosure of electronic device with groove
TWI633572B (zh) Plasma processing device
TW201438056A (zh) 電漿處理腔室的磁屏蔽
CN205803584U (zh) 一种防着板及磁控溅射设备
MY149534A (en) Appliance with coated transparency
TWI695902B (zh) 基板支撐組件、具有其之處理腔室以及處理基板的方法
CN116855915B (zh) 一种大面积dlc镀层均匀沉积方法
US20130133570A1 (en) Vacuum deposition device
TW201338873A (zh) 具有耐腐蝕元件之電漿處理裝置
MY169705A (en) Method and device for passivating solar cells with an aluminium oxide layer
TWI615492B (zh) 標靶總成
CN106611737B (zh) 一种压环装置
JP2012227278A5 (tr)
KR102599630B1 (ko) 에지프레임 및 이를 포함하는 기판처리장치
TW201421531A (zh) 電漿裝置
US10298283B2 (en) Protective case
CN104120410A (zh) 一种反应腔室及等离子体加工设备

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

CP01 Change in the name or title of a patent holder