CN105586634B - 用于直拉单晶炉热场的加热器及使用方法 - Google Patents
用于直拉单晶炉热场的加热器及使用方法 Download PDFInfo
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- CN105586634B CN105586634B CN201610074730.5A CN201610074730A CN105586634B CN 105586634 B CN105586634 B CN 105586634B CN 201610074730 A CN201610074730 A CN 201610074730A CN 105586634 B CN105586634 B CN 105586634B
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- heater
- single crystal
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- thermal field
- heater body
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
名称 | 使用寿命 |
原加热器 | 100~150炉 |
实施例1加热器 | >250炉 |
Claims (4)
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CN201610074730.5A CN105586634B (zh) | 2016-02-03 | 2016-02-03 | 用于直拉单晶炉热场的加热器及使用方法 |
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CN201610074730.5A CN105586634B (zh) | 2016-02-03 | 2016-02-03 | 用于直拉单晶炉热场的加热器及使用方法 |
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Publication Number | Publication Date |
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CN105586634A CN105586634A (zh) | 2016-05-18 |
CN105586634B true CN105586634B (zh) | 2018-08-10 |
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CN201610074730.5A Active CN105586634B (zh) | 2016-02-03 | 2016-02-03 | 用于直拉单晶炉热场的加热器及使用方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109680330B (zh) * | 2019-02-27 | 2024-06-11 | 刘冬雯 | 一种降低晶体缺陷的单晶炉 |
CN113737272B (zh) * | 2021-08-17 | 2022-05-27 | 浙江海纳半导体有限公司 | 一种直拉单晶硅炉热场的三相交流加热器及其加热方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN202643898U (zh) * | 2012-06-29 | 2013-01-02 | 英利能源(中国)有限公司 | 单晶炉热场加热器及包括该单晶炉热场加热器的单晶炉 |
CN203462162U (zh) * | 2013-08-28 | 2014-03-05 | 河北宁晋松宫半导体有限公司 | 一种用于直拉单晶炉的分体加热器 |
CN104762655A (zh) * | 2013-11-19 | 2015-07-08 | 有研新材料股份有限公司 | 一种用于直拉单晶炉热场的组合加热器 |
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Address after: Hangzhou City, Zhejiang province 310052 Binjiang District Xincheng Road No. 99 Applicant after: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310052 Binjiang District Xincheng Road No. 99 Applicant before: Hangzhou Haina Semiconductor Co.,Ltd. |
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Address after: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Applicant after: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. Address before: 310052 Xincheng Road, Binjiang District, Hangzhou, Zhejiang Province, No. 99 Applicant before: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. |
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Address after: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee after: Zhejiang Haina Semiconductor Co.,Ltd. Address before: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee before: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. |
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