CN105575910A - 薄膜晶体管基板的制备方法、薄膜晶体管基板和液晶面板 - Google Patents

薄膜晶体管基板的制备方法、薄膜晶体管基板和液晶面板 Download PDF

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CN105575910A
CN105575910A CN201610153360.4A CN201610153360A CN105575910A CN 105575910 A CN105575910 A CN 105575910A CN 201610153360 A CN201610153360 A CN 201610153360A CN 105575910 A CN105575910 A CN 105575910A
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substrate
layer
active layer
centrosymmetric image
film transistor
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CN201610153360.4A
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CN105575910B (zh
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姚江波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610153360.4A priority Critical patent/CN105575910B/zh
Priority to US15/100,297 priority patent/US10082714B2/en
Priority to PCT/CN2016/078037 priority patent/WO2017156799A1/zh
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Abstract

本发明提供了一种薄膜晶体管基板的制备方法，包括依次在衬底上形成栅极、栅极绝缘层、源极与有源层、钝化层、漏极与像素电极，栅极、栅极、栅极绝缘层、源极与有源层、钝化层、漏极与像素电极在衬底上的正投影均为互相同心的中心对称图形。本发明还提供了一种薄膜晶体管基板，以及具有所述薄膜晶体管基板的液晶面板。本发明的薄膜晶体管基板的制备方法、薄膜晶体管基板及具有所述薄膜晶体管基板的液晶面板，使得薄膜晶体管在各个弯曲方向上的电学特性均匀一致；且使得薄膜晶体管在弯曲时不易发生应力损坏，提升了薄膜晶体管的可靠性。

Description

薄膜晶体管基板的制备方法、薄膜晶体管基板和液晶面板
技术领域
本发明涉及半导体制造技术领域，尤其涉及一种薄膜晶体管基板的制备方法、一种薄膜晶体管基板，以及具有所述薄膜晶体管基板的液晶面板。
背景技术
柔性屏因具有较强柔软度、更耐冲击、更轻薄等优点，日渐受到业内的重视。薄膜晶体管液晶柔性屏在弯曲时，显示屏内的薄膜晶体管会随之产生微变形并承受应力。现有技术中，当显示屏向不同方向弯曲时，显示屏内的薄膜晶体管在各个方向上承受的应力和应变不同，这将使得薄膜晶体管的电学特性在各个方向上产生差异。并且现有的薄膜晶体管结构容易导致薄膜晶体管在弯曲时产生应力损坏，从而引发薄膜晶体管的性能故障。
发明内容
有鉴于此，本发明提供了一种薄膜晶体管基板的制备方法、一种薄膜晶体管基板，以及具有所述薄膜晶体管基板的液晶面板，能够克服现有技术中薄膜晶体管在弯曲时的性能缺陷。
一种薄膜晶体管基板的制备方法，所述薄膜晶体管基板具有衬底，所述制备方法包括：在所述衬底上形成栅极，所述栅极在所述衬底上的正投影为第一中心对称图形；在所述栅极上形成栅极绝缘层，所述栅极绝缘层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形；在所述栅极绝缘层上形成有源层以及源极，所述源极围绕在所述有源层的外周缘，所述源极在所述衬底上的正投影与所述有源层在所述衬底上的正投影均为与所述第一中心对称图形同心的中心对称图形；在所述源极及所述有源层上形成钝化层，所述钝化层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述钝化层上对应所述有源层的区域设有导通孔，所述导通孔的轴线通过所述第一中心对称图形的对称中心；在所述导通孔内生成漏极，所述漏极与所述有源层电连接；在所述钝化层和所述绝缘保护层上生成像素电极，所述像素电极的一端与所述漏极相连。
其中，所述在所述栅极绝缘层上形成有源层以及源极包括：在所述栅极绝缘层上形成半导体层，所述半导体层在所述衬底上的正投影为第二中心对称图形，所述第二中心对称图形与所述第一中心对称图形同心；在所述栅极绝缘层上除所述半导体层之外的区域涂布第一光阻层，在所述半导体层上涂布第二光阻层，所述第二光阻层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述半导体层上涂覆有所述第二光阻层的部分作为所述有源层；对所述半导体层上除涂覆有所述第二光阻层之外的区域进行离子注入，以将所述半导体层中除所述有源层之外的部分转变为所述源极；除去所述第一光阻层与所述第二光阻层。
其中，所述栅极、所述栅极绝缘层、所述源极、所述有源层以及所述漏极在所述衬底上的正投影为圆形或正方形。
其中，所述在所述栅极绝缘层上形成半导体层包括：使用化学气相沉积将非晶硅材料沉积在所述栅极绝缘层上以形成所述半导体层；或使用物理气相沉积将铟镓锌氧化物沉积在所述栅极绝缘层上以形成所述半导体层。
其中，通过物理气相沉积和构图工艺同时形成所述漏极与所述像素电极。
一种薄膜晶体管基板，包括衬底，所述薄膜晶体管基板还包括：栅极、栅极绝缘层、有源层、源极、钝化层、漏极和像素电极；所述栅极设于所述衬底上，所述栅极在所述衬底上的正投影为第一中心对称图形；所述栅极绝缘层在所述栅极之上，且所述栅极绝缘层在衬底上的正投影为与所述第一中心对称图形同心的中心对称图形；所述有源层与所述源极均设于所述栅极绝缘层上，所述源极围绕在所述有源层的外周缘，所述源极在所述衬底上的正投影与所述有源层在所述衬底上的正投影均为与所述第一中心对称图形同心的中心对称图形；所述钝化层位于所述源极及所述有源层之上，所述钝化层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述钝化层上对应所述有源层的区域设有导通孔，所述导通孔的轴线通过所述第一中心对称图形的对称中心；所述漏极位于所述导通孔内并与所述有源层电连接；所述像素电极位于所述钝化层和所述绝缘保护层之上，所述像素电极的一端与所述漏极相连。
一种液晶面板，包括上述的薄膜晶体管基板。
由此，本发明的薄膜晶体管基板的制备方法、薄膜晶体管基板及具有所述薄膜晶体管基板的液晶面板，通过在衬底上设置呈中心对称的薄膜晶体管，薄膜晶体管在各个弯曲方向上承受的应力和应变相同，由此使得薄膜晶体管在各个弯曲方向上的电学特性均匀一致。并且此种中心对称结构，相比较其他非对称结构而言，由于不易出现薄膜晶体管的应力不对称效应，薄膜晶体管在弯曲时不易发生应力损坏，从而提升了薄膜晶体管的可靠性。
附图说明
为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。
图1是本发明实施例的制备方法的示意性流程图。
图2是本发明实施例的制备方法中形成栅极的示意图。
图3是本发明实施例的制备方法中形成栅极绝缘层的示意图。
图4是本发明实施例的制备方法中形成源极与有源层的示意图。
图5是本发明实施例的制备方法中离子注入的示意图。
图6是本发明实施例的制备方法中形成钝化层的示意图。
图7是本发明实施例的制备方法中形成漏极与像素电极的示意图。
具体实施例
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都应属于本发明保护的范围。
图1是本发明实施例的薄膜晶体管基板的制备方法100的示意性流程图。薄膜晶体管基板是液晶面板的重要组件之一。薄膜晶体管基板包括衬底，所述衬底一般为玻璃板或PI膜(PolyimideFilm，聚酰亚胺薄膜)。所述衬底上设有薄膜晶体管阵列、扫描线、数据线，及驱动芯片等。如图1所示，制备方法100包括：
S101，在所述衬底上形成栅极，所述栅极在所述衬底上的正投影为第一中心对称图形；
S102，在所述栅极上形成栅极绝缘层，所述栅极绝缘层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形；
S103，在所述栅极绝缘层上形成有源层以及源极，所述源极围绕在所述有源层的外周缘，所述源极在所述衬底上的正投影与所述有源层在所述衬底上的正投影均为与所述第一中心对称图形同心的中心对称图形；
S104，在所述源极及所述有源层上形成钝化层，所述钝化层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述钝化层上对应所述有源层的区域设有导通孔，所述导通孔的轴线通过所述第一中心对称图形的对称中心；
S105，在所述导通孔内生成漏极，所述漏极与所述有源层电连接；在所述钝化层和所述绝缘保护层上生成像素电极，所述像素电极的一端与所述漏极相连。
具体而言，如图2所示，在S101中，通过物理气相沉积在衬底201上沉积一层金属层，所述金属层的材料包括但不限于铝或钼。然后使用构图工艺对所述金属层进行图案化处理，最终生成栅极202。栅极202在衬底201上的正投影为第一中心对称图形。本实施例中，优选的，所述第一中心对称图形为圆形。在其他实施例中，还可以通过其他常规工艺形成栅极202，和/或栅极202在衬底201上的正投影为其他中心对称图形，例如，正方形。
如图3所示，在S102中，在栅极202之上，通过化学气相沉积沉积一层栅极绝缘层203，栅极绝缘层203的材料包括但不限于氮化硅或氧化硅。栅极绝缘层203完全包覆栅极202，起到将栅极202与其他沉积层隔绝的作用。栅极绝缘层203在衬底201上的正投影为圆形，并与栅极202在衬底201上的正投影同心。在其他实施例中，还可以通过其他常规工艺形成所述栅极绝缘层，和/或栅极绝缘层203在衬底201上的正投影为其他中心对称图形，例如，正方形。
如图4所示，在S103中，在栅极绝缘层203之上，形成有源层204以及源极205。源极205贴合并围绕在有源层204的外周缘，源极205在衬底201上的正投影为圆形，有源层204在衬底201上的正投影为圆环形，且源极205及有源层204在衬底201上的正投影均与所述第一中心对称图形同心。在其他实施例中，源极205与有源层204在衬底201上的正投影可以为其他中心对称图形，例如，正方形。
进一步的，在S103中，所述在所述栅极绝缘层上形成有源层以及源极包括：
在所述栅极绝缘层上形成半导体层，所述半导体层在所述衬底上的正投影为第二中心对称图形，所述第二中心对称图形与所述第一中心对称图形同心；
在所述栅极绝缘层上除所述半导体层之外的区域涂布第一光阻层，在所述半导体层上涂布第二光阻层，所述第二光阻层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述半导体层上涂覆有所述第二光阻层的部分作为所述有源层；
对所述半导体层上除涂覆有所述第二光阻层之外的区域进行离子注入，以将所述半导体层中除所述有源层之外的部分转变为所述源极；
除去所述第一光阻层与所述第二光阻层。
具体的，如图5所示，在栅极绝缘层203之上沉积一层半导体层206，半导体层206覆盖部分栅极绝缘层203。半导体层206在衬底201上的正投影为与所述第一中心对称图形同心的圆形。半导体层206的材料包括但不限于非晶硅或铟镓锌氧化物。当使用非晶硅时，通过化学气相沉积将非晶硅材料沉积在栅极绝缘层203之上形成半导体层206；当使用铟镓锌氧化物时，通过物理气相沉积将铟镓锌氧化物沉积在栅极绝缘层203之上形成半导体层206。之后，分别在栅极绝缘层203上除半导体层206之外的区域涂布第一光阻层207、在半导体层206上涂布第二光阻层208，第二光阻层208在衬底201上的正投影为圆形，且第二光阻层208在衬底201上的正投影与所述第一中心对称图形同心。第一光阻层207与第二光阻层208的作用是将不进行离子注入的区域予以遮盖保护。接着，如图5中的箭头所示，对半导体层206上未涂布光阻的区域进行离子注入，以将这部分的材料进行表面改性，使其转变为源极205。而半导体层206中除源极205之外的部分，即涂布有第二光阻层208的部分，则作为有源层204。待离子注入完成之后，除去第一光阻层207与第二光阻层208。在其他实施例中，半导体层206和第二光阻层208在衬底201上的正投影可以为其他中心对称图形，例如，正方形。在其他实施例中，还可以不使用离子注入、而直接采用其他常规工艺，来形成有源层204以及源极205。
如图6所示，在S104中，通过化学气相沉积在有源层204以及源极205上形成一层钝化层209，钝化层209在衬底201上的正投影为与所述第一中心对称图形同心的圆形，钝化层209的材料包括但不限于氮化硅或氧化硅。钝化层209上对应有源层204的区域设有导通孔210，导通孔210的轴线通过所述第一中心对称图形的对称中心，即导通孔210与有源层204同心。在其他实施例中，还可以通过其他常规工艺形成钝化层209，和/或钝化层209在衬底201上的正投影可以为其他中心对称图形，例如，正方形。
如图7所示，在S105中，使用物理气相沉积和构图工艺同时形成漏极211与像素电极212。漏极211位于导通孔210内，与有源层204电连接。漏极211在衬底201上的正投影为与所述第一中心对称图形同心的圆形。像素电极212位于钝化层209和绝缘保护层203上，像素电极212的一端与漏极211相连，另一端位于薄膜晶体管的像素单元内(图未示)。本实施例的方案可同时形成漏极211与像素电极212，相比较依次形成漏极211与像素电极212的方案，简化了工序、提升了生产效率、降低了生产成本。当然，在其他实施例中，可以通过其他常规工艺，依次形成漏极211与像素电极212。
由此，本发明的薄膜晶体管基板的制备方法100，通过在衬底上设置呈中心对称的薄膜晶体管，薄膜晶体管在各个弯曲方向上承受的应力和应变相同，由此使得薄膜晶体管在各个弯曲方向上的电学特性均匀一致。并且此种中心对称结构，相比较其他非对称结构而言，由于不易出现薄膜晶体管的应力不对称效应，薄膜晶体管在弯曲时不易发生应力损坏，从而提升了薄膜晶体管的可靠性。
以上结合图1详细描述了本发明实施例的薄膜晶体管基板的制备方法。下面将结合图7描述本发明实施例的薄膜晶体管基板。
如图7所示，本实施例的薄膜晶体管基板200包括衬底201、栅极202、栅极绝缘层203、有源层204、源极205、钝化层209、漏极211和像素电极212。薄膜晶体管基板200采用上述方法实施例中描述的制备方法制造。
衬底201为曲面玻璃板或者可挠式玻璃板。衬底201上设有薄膜晶体管阵列、扫描线、数据线，及驱动芯片等(图未示)。曲面或者可挠式的衬底，适应性强、柔韧性高，更适用于制作柔性屏。在其他实施例中，衬底201还可以是其他材料层，如PI膜。
栅极202设于衬底201上。栅极202在衬底201上的正投影为第一中心对称图形，优选的，本实施例中，所述第一中心对称图形为圆形。在其他实施例中，所述第一中心对称图形为其他中心对称图形，例如为正方形。
栅极绝缘层203设于衬底201上，并完全包覆栅极202。栅极绝缘层203呈中心对称结构。栅极绝缘层203在衬底201上的正投影为圆形，并与栅极202在衬底201上的正投影同心。
有源层204与源极205均设于栅极绝缘层203上。源极205贴合并围绕在有源层204的外周缘，源极205在衬底201上的正投影为圆形，有源层204在衬底201上的正投影为圆环形，且源极205及有源层204在衬底201上的正投影均与所述第一中心对称图形同心。在其他实施例中，源极205与有源层204在衬底201上的正投影可以为其他中心对称图形，例如，正方形。
钝化层206设于有源层204以及源极205上。钝化层209在衬底201上的正投影为与所述第一中心对称图形同心的圆形。钝化层209上对应有源层204的区域设有导通孔210，导通孔210的轴线通过所述第一中心对称图形的对称中心，即导通孔210与有源层204同心。在其他实施例中，钝化层209在衬底201上的正投影可以为其他中心对称图形，例如，正方形。
漏极211位于导通孔210内，与有源层204电连接。漏极211在衬底201上的正投影为与所述第一中心对称图形同心的圆形。像素电极212位于钝化层209和绝缘保护层203上，像素电极212的一端与漏极211相连，另一端位于薄膜晶体管的像素单元内(图未示)。
本发明实施例还提供了一种液晶面板(图未示)，所述液晶面板具有上述实施例描述的薄膜晶体管基板200。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易的想到各种等效的修改或替换，这些修改或替换都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (7)

1.一种薄膜晶体管基板的制备方法，所述薄膜晶体管基板具有衬底，其特征在于，所述制备方法包括：
在所述衬底上形成栅极，所述栅极在所述衬底上的正投影为第一中心对称图形；
在所述栅极上形成栅极绝缘层，所述栅极绝缘层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形；
在所述栅极绝缘层上形成有源层以及源极，所述源极围绕在所述有源层的外周缘，所述源极在所述衬底上的正投影与所述有源层在所述衬底上的正投影均为与所述第一中心对称图形同心的中心对称图形；
在所述源极及所述有源层上形成钝化层，所述钝化层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述钝化层上对应所述有源层的区域设有导通孔，所述导通孔的轴线通过所述第一中心对称图形的对称中心；
在所述导通孔内生成漏极，所述漏极与所述有源层电连接；在所述钝化层和所述绝缘保护层上生成像素电极，所述像素电极的一端与所述漏极相连。
2.根据权利要求1所述的制备方法，其特征在于，所述在所述栅极绝缘层上形成有源层以及源极包括：
在所述栅极绝缘层上形成半导体层，所述半导体层在所述衬底上的正投影为第二中心对称图形，所述第二中心对称图形与所述第一中心对称图形同心；
在所述栅极绝缘层上除所述半导体层之外的区域涂布第一光阻层，在所述半导体层上涂布第二光阻层，所述第二光阻层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述半导体层上涂覆有所述第二光阻层的部分作为所述有源层；
对所述半导体层上除涂覆有所述第二光阻层之外的区域进行离子注入，以将所述半导体层中除所述有源层之外的部分转变为所述源极；
除去所述第一光阻层与所述第二光阻层。
3.根据权利要求1或2所述的制备方法，其特征在于，所述栅极、所述栅极绝缘层、所述源极、所述有源层以及所述漏极在所述衬底上的正投影为圆形或正方形。
4.根据权利要求2所述的制备方法，其特征在于，所述在所述栅极绝缘层上形成半导体层包括：
使用化学气相沉积将非晶硅材料沉积在所述栅极绝缘层上以形成所述半导体层；或使用物理气相沉积将铟镓锌氧化物沉积在所述栅极绝缘层上以形成所述半导体层。
5.根据权利要求1、2或4所述的制备方法，其特征在于，
通过物理气相沉积和构图工艺同时形成所述漏极与所述像素电极。
6.一种薄膜晶体管基板，包括衬底，其特征在于，所述薄膜晶体管基板还包括：
栅极、栅极绝缘层、有源层、源极、钝化层、漏极和像素电极；所述栅极设于所述衬底上，所述栅极在所述衬底上的正投影为第一中心对称图形；所述栅极绝缘层在所述栅极之上，且所述栅极绝缘层在衬底上的正投影为与所述第一中心对称图形同心的中心对称图形；所述有源层与所述源极均设于所述栅极绝缘层上，所述源极围绕在所述有源层的外周缘，所述源极在所述衬底上的正投影与所述有源层在所述衬底上的正投影均为与所述第一中心对称图形同心的中心对称图形；所述钝化层位于所述源极及所述有源层之上，所述钝化层在所述衬底上的正投影为与所述第一中心对称图形同心的中心对称图形，所述钝化层上对应所述有源层的区域设有导通孔，所述导通孔的轴线通过所述第一中心对称图形的对称中心；所述漏极位于所述导通孔内并与所述有源层电连接；所述像素电极位于所述钝化层和所述绝缘保护层之上，所述像素电极的一端与所述漏极相连。
7.一种液晶面板，其特征在于，包括如权利要求6所述的薄膜晶体管基板。
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