CN105556646B - 具有封装的光阻隔件的支撑环 - Google Patents
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Abstract
本文所述的实施方式提供一种热处理设备，该热处理设备具有热源以及旋转基板支座，该旋转基板支座与该热源相对，该旋转基板支座包括支撑构件，该支撑构件具有光阻挡构件。光阻挡构件可以是封装的部件，或可移动式设置在支撑构件内侧。光阻挡构件可以是不透明及/或反射性，且可为耐火金属。
Description
领域
本文所述的实施方式一般涉及半导体基板的热处理。更详言之，本文所述的实施方式涉及控制热处理腔室中光噪声(light noise)的设备与方法。
背景
在半导体工业中常见热处理。热处理用于激活(activate)半导体基板中化学与物理的变化，以重组基板的原子结构与组成。在常用的方法(已知为快速热处理)中，基板以多达每秒400℃的速率加热至目标温度，保持在目标温度达诸如1秒的短暂时间，之后快速冷却至一温度，低于该温度则不会有进一步的变化发生。
为了增进基板所有区域的均匀处理，一般会布置温度传感器以监视基板多个位置的温度。广泛使用高温计测量基板温度。基板温度的控制与测量因热吸收与光发射而复杂化，因此原位(local)层形成条件也复杂化，而热吸收与光发射是由腔室部件以及传感器与腔室表面暴露于处理腔室内的处理条件所造成。仍持续需要具改良的温度控制、温度测量的热处理腔室，以及操作此类腔室以改善均匀度与再现性的方法。
概述
本文所述的实施方式提供一种热处理设备，该热处理设备具有热源以及旋转基板支座，该旋转基板支座与该热源相对，该旋转基板支座包括支撑构件，该支撑构件具有光阻挡构件。光阻挡构件可以是封装的部件，或可以移动式设置在支撑构件内侧。光阻挡构件可以是不透明及/或反射性，且可为耐火金属。
本文所述的实施方式进一步提供一种用于在热处理腔室中的旋转基板支座的支撑构件，该支撑构件具有磁性转子、连接该磁性转子的壁、以及光阻挡构件，该磁性转子与该壁共同限定内部空间，而该光阻挡构件移动式设置在该内部空间内侧。该光阻挡构件可以是具伸缩接头(expansion joint)的金属片，且该壁可具有多个定位件，所述定位件将该金属片定位在该内部空间内。
附图简要说明
通过参考实施方式(一些实施方式绘示于附图中)，可得到上文简短总结的本发明的更特定的描述，而可详细了解前述的本发明特征。然而，应注意附图仅绘示本发明的典型实施方式，因此不应被视为限制本发明的范围，因为本发明可容许其他同等有效的实施方式。
图1是根据一个实施方式的热处理腔室的截面视图。
图2是根据另一实施方式的支撑构件的截面视图。
为助于了解，如可能则已使用同一标号指定各图共通的同一元件。应考虑一个实施方式中公开的元件可有益地用于其他实施方式而无须特定记叙。
具体描述
图1是根据一个实施方式的热处理腔室100的截面视图。热处理腔室100包括腔室主体35，该腔室主体35限定处理空间14，该处理空间14配置成处理在该处理空间14中的基板12。腔室主体35可由不锈钢制成，且可衬有石英。处理空间14配置成由加热灯组件16辐射式加热，该加热灯组件16配置成邻近石英窗18。一个实施方式中，石英窗18可为水冷式。
狭缝阀30可形成于腔室主体35的一侧上，以提供基板12至处理空间14的通道。气体入口44可连接气源45以提供处理气体、净化气体、及/或清洁气体至处理空间14。真空泵13可流体连通式(fluidly)通过出口11连接处理空间14，而用于泵抽(pump out)处理空间14。
环形通道27形成于接近腔室主体35的底部处。磁性转子21可配置在环形通道27中。支撑构件39可安置于磁性转子21上或耦接该磁性转子21。基板12可由边缘环20于该基板12的边缘处支撑，该边缘环20设置在支撑构件39上。磁性定子23可位在磁性转子21的外侧，且可穿过腔室主体35而磁性耦合，以诱导磁性转子21旋转，从而诱导边缘环20与支撑在边缘环20上的基板12旋转。磁性定子23也可配置成调整磁性转子21的高度，从而升举正受处理的基板12。
腔室主体35可包括反射体22，该反射体22定位成面向基板12。反射体22具有面向基板12的光学反射表面28，以增进基板12的发射率。一个实施方式中，反射体22为水冷式。反射表面28与基板12的表面限定处理空间14。一个实施方式中，反射体22的直径可稍微大于正受处理的基板12的直径。举例而言，若热处理腔室100配置成处理12英寸直径的圆形基板，则反射体22可具有约13英寸的直径。其他实施方式中，反射体22的直径可小于基板12的直径。
一个实施方式中，外环19可耦接在腔室主体35与边缘环20之间，以将处理空间14与加热区15分开。加热区15由基板12与加热灯组件16限定，该加热灯组件16定位在基板12对面且与反射体22相对。加热灯组件16可包括加热元件37的阵列。加热元件37的阵列可以是UV灯、卤素灯、激光二极管、电阻式加热器、微波赋能加热器、发光二极管(LED)、或任何其他适合的加热元件，可单独使用也可相互组合使用。加热元件37的阵列可设置于反射体主体43中所形成的孔洞中。
一个实施方式中，加热元件37可排列成六边形图案。冷却通道40可形成于反射体主体43中。诸如水的冷却剂可从入口41进入反射体主体43，邻近垂直孔行进而冷却加热元件37的阵列，并且从出口42离开反射体主体43。此申请中的“垂直”大体上是意味与由基板12或石英窗18限定的平面正交的方向。“垂直”不为相对于重力或地表的绝对方向，而是相对于腔室100的对称，且可平行腔室100的轴。类似地，“水平”大体上是与“垂直”正交，而非绝对的方向。
加热元件37的阵列连接控制器52，该控制器52调整加热元件37的阵列的加热效果。一个实施方式中，加热元件37的阵列可分成多个加热群组，以由多个同心区加热基板12。每一加热群组可受独立控制，以提供横跨基板12半径的期望温度分布曲线。一个实施方式中，区群组57的每一者连接电源55，该电源55个别控制每一区。
多个温度探针24可通过反射体22中的多个开口25耦接反射体22，每一温度探针24对应一个开口。温度探针24可包括一或多个高温计，所述高温计感测基板12发射的热辐射，且发送代表温度的信号给控制器52。控制器52可根据来自对应的温度探针24的信号而控制加热区群组57。
支撑构件39可由石英制成，且可为半透明(translucent)。一个实施方式中，支撑构件39的大部分是气泡石英，或其他白色半透明材料。通过气泡石英材料，接触支撑构件39的内表面50的光在整个支撑构件39中传播。当边缘环20于处理期间升高至外环19上方时，传输的光可传播进入处理空间14，且有效地不被可用作温度探针24的高温计探知，或减少该高温计的效用。
为了减少光传输至处理空间14，支撑构件39可包括光阻挡构件。光阻挡构件阻挡光以避免传输通过支撑构件39。光阻挡构件可以是不透明构件及/或反射性构件。支撑构件39可包括不附着支撑构件39的任何表面的光阻挡构件。一个态样中，光阻挡构件可封装于支撑构件39中，且可为移动式设置于支撑构件39内侧。
图2是根据另一实施方式的支撑构件200的截面视图。支撑构件200可用作为图1的设备中的支撑构件39。
支撑构件200具有壁206，该壁206限定内部空间208。光阻挡构件210可设置在内部空间208中，使得光阻挡构件210移动式设置于内部空间208内侧。内部空间208具有一尺寸204，该尺寸大于光阻挡构件210的厚度，使得在光阻挡构件210的任一侧上于光阻挡构件210与壁206之间可维持间隙。壁206具有一厚度，该厚度提供加热区15与内部空间208之间的热绝缘，使得光阻挡构件210的热暴露降低。支撑构件200从而具有整体厚度202，该厚度介于约0.1cm至约3.0cm之间。支撑构件200可具有正圆柱的形状，且一般环绕灯组件16(图1)。支撑构件200的壁206可由石英形成，且可为透明或半透明。一个实施方式中，壁206是气泡石英。一个实施方式中，支撑构件200可以是凸缘形状，该凸缘形状具有垂直壁区段与径向延伸部，该径向延伸部可为向内的径向延伸部。垂直壁区段与径向延伸部可作成一个单一的片材，或作成可熔合在一起或另外连接的两个或更多个分别的片材，或者可彼此移动式接触。在这样的实施方式中，图1的边缘环20会安置在径向延伸部上。举例而言，边缘环20的外边缘可安置在径向延伸部的内边缘上。
在支撑构件200由两个或更多个分别的片材制成的实施方式中，可在该两个或更多个片材接触的表面处设置光迷宫(light labyrinth)。这样的光迷宫可包括连锁(interlocking)的沟槽或丘陵(hills)，而提供曲折(tortuous)的路径，以克服片材间通过接口的漏光。
光阻挡构件210可以是设置于内部空间208内侧的金属片。光阻挡构件210一般为实质上对灯组件16(图1)发射的光不透明，且光阻挡构件210可为反射性或部分反射性。光阻挡构件210可为实质上平滑且平坦，大体上依循支撑构件200的轮廓，或者是光阻挡构件210所具有的轮廓可为与支撑构件200的任何轮廓无关。例如，光阻挡构件210可具有光散射特征，诸如皱折或表面纹理。光阻挡构件210一般具有约0.5mm至约5mm之间的厚度，所以在一些实施方式中，光阻挡构件210可以是金属箔，而在其他实施方式中，光阻挡构件210可以是金属片。光阻挡构件210可附接磁性转子21或可仅安置于磁性转子21上。光阻挡构件210也可以是包括金属或石墨颗粒的颗粒膜。可使用诸如钨之类的金属颗粒。
支撑构件200可通过将两个圆柱状构件焊接在一起而制成，以形成具内部空间208的壁206，而所述圆柱状构件于每一构件的顶部具有不同的半径。光阻挡构件210可以是金属，且一般为耐热。这两个圆柱状构件可于所述构件的底部焊接在一起，而于熔合的圆柱状构件的顶部处留下狭槽。光阻挡构件210随后可滑入该狭槽，且该狭槽于圆柱状构件的顶部处封闭。封闭后，空间208可具有约1μTorr至约10μTorr之间的内压。如果需要，则收气剂可纳入内部空间中，以当气体从加热区15漏入内部空间208时维持真空。举例而言，锆化合物可纳入空间208中以吸附氢气。通口可纳入支撑构件200的期望位置，以用气体填充支撑构件200及从支撑构件200抽空气体。例如，于狭槽焊接封闭前，填充管可插入位在顶部的狭槽中。
某些实施方式中，光阻挡构件210可包括多个区段(图中未示)。此实施方式中，多个区段可定位成在区段彼此相邻处重叠。另一实施方式中，多个区段可不重叠，但可用一方式定位，使得当反射性构件暴露至辐射时实质上无辐射贯穿多个部分之间的间隙。任一实施方式中，光阻挡构件210的间隔与位置可说明在暴露至辐射时光阻挡构件210的膨胀。更详言之，光阻挡构件210的定位可经选择以容置热应力下光阻挡构件210的实体移动。另一实施方式中，光阻挡构件210可为单独的单一片材，该片材具伸缩接头(图中未示)，在该接头处光阻挡构件210的两个边缘可重叠，以维持光阻挡构件210的热膨胀与收缩期间的光密封。
光阻挡构件210可以是镜面反射体，使得提供至光阻挡构件210的光具有等于反射角的入射角。光阻挡构件210可为宽带反射体，诸如金属反射体或介电膜叠层，或前述材料的组合。某些实施方式中，光阻挡构件210可被透明阻隔材料(诸如氧化硅)所涂布或包装在该透明阻隔材料中。一个范例中，光阻挡构件210可由介电叠层形成，该介电叠层包括氧化硅(SiO2)、氧化钛(TiO2)、氧化钽(Ta2O5)、或前述材料的组合。另一范例中，光阻挡构件210可由选以抵抗处理温度的金属形成。范例包括铝、金、银、铂、钨、钽、钛、或前述材料的组合。
某些实施方式中，限定空间208的表面可涂布有反射性材料。例如限定空间208的每一表面可涂布有反射性材料。所述表面可通过无电电镀涂布有反射性材料，该无电电镀诸如无电镍电镀或无电银电镀。封闭空间208之前，空间208可填充有水性电镀溶液，且可进行无电电镀工艺以用镍、银、金、铜、或另一反射性材料电镀限定空间208的表面。无电电镀工艺之后，将水溶液从空间208抽出，且空间208由石英焊接封闭。此实施方式中，可于类似先前所述的实施方式的真空下设置空间208。限定空间208且涂布有反射性材料的表面可作为镜面反射体。
其他实施方式中，限定空间208的表面可涂布有吸收材料。举例而言，限定空间208的每一表面可涂布有吸收材料。所述表面可通过施加颗粒的悬浮液或溶凝胶而受到涂布。封闭空间208之前，空间208可填充有吸收颗粒的悬浮液或流体载体中的溶凝胶。通过蒸发去除流体载体且将颗粒沉积于表面上(视情况通过加热移除任何悬浮液添加物或通过与氧化还原试剂加热而设定颗粒的氧化态而辅助)之后，空间208通过石英焊接而封闭。此实施方式中，可于类似先前所述的实施方式的真空下设置空间208。适合的悬浮液包括石墨悬浮液(例如AquadagTM,ICI)、陶瓷悬浮液(例如HiE-CoatTM840-C,Aremco)。适合的溶凝胶包括以金属烷氧化物及钨氧化物为基础的溶凝胶，如果需要，钨氧化物可还原至金属态。
支撑构件200可包括一或多个定位件212(例如多个定位件212)，所述定位件212将光阻挡构件210维持成相对壁206的所有部分为间隔开的关系。定位件212从壁206突出至内部空间208中。定位件212可经设计大小而将光阻挡构件210置于离壁206的一个部分某期望距离之处，或接触壁206的一部分。举例而言，定位件212可横越壁206与光阻挡构件210之间的整个距离，使得光阻挡构件受到限制而无法在朝向壁的方向上移动。或者，定位件212可于壁206与光阻挡构件210之间横越一部分，使得光阻挡构件210保持在朝向壁206的方向上移动的自由度。
定位件212可排列于光阻挡构件210的相同侧上，或分布在光阻挡构件210的两侧上，这取决于任何期望的方案。定位件212作用为限制光阻挡构件210朝向壁206移动，且可防止光阻挡构件210触碰壁206。这样的排列可维持加热区15(图1)与光阻挡构件210之间的额外热阻隔件。光阻挡构件210于内部空间208内的位置可因而经选择而提供光阻挡构件210与壁206之间的真空阻隔件。真空阻隔件的尺寸可通过指定定位件212的长度而额外选择。
定位件212可形成为壁206的一体(integral)部件，或所述定位件212可于光阻挡构件210插入之前焊接至壁206。可使用任何数目的定位件212，且所述定位件212可垂直(如图2所示)及/或水平对准，或者是所述定位件212可具有参差错列(staggered)的排列方式，使得定位件212不对准。定位件212可具有磨圆的接触表面，该接触表面触碰光阻挡构件210以避免对光阻挡构件210或定位件212的任何摩擦损坏。
如前文中与图1相关所记载，支撑构件39(可为图2的支撑构件200)环绕灯组件16。支撑构件39可为实质上连续而绕支撑构件39周围的每一点处接触边缘环20，或者该支撑构件39可不连续地或周期式接触边缘环20。如果须要，则支撑构件39及/或支撑构件39中所封装的光阻挡构件(例如图2的光阻挡构件210)可具有一或多个开口，以从加热区15穿过支撑构件39传输光样本。检测器可设置在支撑构件39外侧，以检测传输的光，而提供用于检测支撑构件39(从而检测基板12)的旋转位置的手段。检测器可为光电二极管(或任何适合的光检测器)且可定位在环形通道27中。当传输穿过开口的光照射检测器，该检测器可校准基板支座的位置。
前述内容涉及本发明的实施方式，可不背离本发明的基本范围而设计本发明的其他与进一步的实施方式，且本发明的范围是由所附的权利要求书所确定。
Claims (13)
1.一种热处理设备，包括：
热源；以及
可旋转基板支座，与所述热源相对，所述可旋转基板支座包括支撑构件，所述支撑构件具反射性光阻挡构件，所述反射性光阻挡构件移动式设置在所述可旋转基板支座内侧。
2.如权利要求1所述的热处理设备，其中所述光阻挡构件包括封装的部件。
3.如权利要求2所述的热处理设备，其中所述封装部件包括耐火金属。
4.如权利要求1所述的热处理设备，其中所述光阻挡构件是颗粒膜。
5.如权利要求4所述的热处理设备，其中所述颗粒膜包括石墨。
6.如权利要求4所述的热处理设备，其中所述颗粒膜包括金属颗粒。
7.如权利要求6所述的热处理设备，其中所述金属颗粒为钨。
8.一种用于热处理腔室中的旋转基板支座的支撑构件，所述支撑构件包括：
磁性转子；
壁，连接所述磁性转子，所述壁与所述磁性转子共同限定所述壁内的内部空间；以及
反射性光阻挡构件，移动式设置在所述内部空间内侧，其中间隙维持在所述反射性光阻挡构件与所述壁之间。
9.如权利要求8所述的支撑构件，其中所述光阻挡构件是金属片。
10.如权利要求9所述的支撑构件，其中所述金属片是耐火金属，且所述金属片包括伸缩接头。
11.如权利要求10所述的支撑构件，其中所述壁包括多个定位件。
12.如权利要求11所述的支撑构件，其中所述壁为半透明材料，且所述金属片为由铝、金、银、铂、钨、钽、钛、与前述材料的组合所构成的群组选出的材料。
13.一种用于热处理腔室的支撑构件，包括：
壁，限定内部空间；以及
反射性金属片，移动式设置在所述内部空间中，其中间隙维持在所述反射性金属片与所述壁之间。
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262397B1 (en) * | 1999-03-30 | 2001-07-17 | Tokyo Electron Ltd. | Heat treatment apparatus and heat treatment method |
| US20040250772A1 (en) * | 2003-06-16 | 2004-12-16 | Sundar Ramamurthy | Cylinder for thermal processing chamber |
| US20050118737A1 (en) * | 2002-02-28 | 2005-06-02 | Toshio Takagi | Shower head structure for processing semiconductor |
| CN1922457A (zh) * | 2004-02-27 | 2007-02-28 | 应用材料股份有限公司 | 对构图的晶片背面进行快速热退火处理的方法 |
| US20080142497A1 (en) * | 2006-12-14 | 2008-06-19 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
| US20090274454A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
| CN102017102A (zh) * | 2008-05-09 | 2011-04-13 | 应用材料公司 | 用于高压快速热处理的设备和方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2461036A (en) * | 1944-03-31 | 1949-02-08 | Armco Steel Corp | Stainless steel polishing |
| US5871588A (en) * | 1995-07-10 | 1999-02-16 | Cvc, Inc. | Programmable ultraclean electromagnetic substrate rotation apparatus and method for microelectronics manufacturing equipment |
| US5818137A (en) * | 1995-10-26 | 1998-10-06 | Satcon Technology, Inc. | Integrated magnetic levitation and rotation system |
| US6157106A (en) * | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Magnetically-levitated rotor system for an RTP chamber |
| US6280183B1 (en) * | 1998-04-01 | 2001-08-28 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
| TW466576B (en) * | 1999-06-15 | 2001-12-01 | Ebara Corp | Substrate processing apparatus |
| US6376804B1 (en) * | 2000-06-16 | 2002-04-23 | Applied Materials, Inc. | Semiconductor processing system with lamp cooling |
| KR100428789B1 (ko) | 2001-12-05 | 2004-04-28 | 삼성전자주식회사 | 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법 |
| US7509035B2 (en) * | 2004-09-27 | 2009-03-24 | Applied Materials, Inc. | Lamp array for thermal processing exhibiting improved radial uniformity |
| KR101315412B1 (ko) * | 2006-09-27 | 2013-10-07 | 엘아이지에이디피 주식회사 | 기판증착기 및 이를 이용한 증착방법 |
| GB2458964A (en) * | 2008-04-04 | 2009-10-07 | Elmelin Plc | Induction furnace lining |
| US8548311B2 (en) * | 2008-04-09 | 2013-10-01 | Applied Materials, Inc. | Apparatus and method for improved control of heating and cooling of substrates |
| KR101048295B1 (ko) * | 2009-10-23 | 2011-07-15 | 주성엔지니어링(주) | 기판 처리 장치 |
| US20110155058A1 (en) * | 2009-12-18 | 2011-06-30 | Applied Materials, Inc. | Substrate processing apparatus having a radiant cavity |
| US8979087B2 (en) * | 2011-07-29 | 2015-03-17 | Applied Materials, Inc. | Substrate supporting edge ring with coating for improved soak performance |
| KR101704159B1 (ko) * | 2012-01-26 | 2017-02-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 상부 기판 지지 어셈블리를 갖는 열 처리 챔버 |
| KR102033200B1 (ko) * | 2012-05-30 | 2019-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열 처리를 위한 장치 및 방법 |
| US10409306B2 (en) * | 2013-05-01 | 2019-09-10 | Applied Materials, Inc. | Apparatus and methods for low temperature measurement in a wafer processing system |
| US10872790B2 (en) * | 2014-10-20 | 2020-12-22 | Applied Materials, Inc. | Optical system |
| US10571337B2 (en) * | 2017-05-26 | 2020-02-25 | Applied Materials, Inc. | Thermal cooling member with low temperature control |
| EP3595137A1 (de) * | 2018-07-12 | 2020-01-15 | Levitronix GmbH | Elektromagnetischer drehantrieb und rotationsvorrichtung |
-
2014
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262397B1 (en) * | 1999-03-30 | 2001-07-17 | Tokyo Electron Ltd. | Heat treatment apparatus and heat treatment method |
| US20050118737A1 (en) * | 2002-02-28 | 2005-06-02 | Toshio Takagi | Shower head structure for processing semiconductor |
| US20040250772A1 (en) * | 2003-06-16 | 2004-12-16 | Sundar Ramamurthy | Cylinder for thermal processing chamber |
| CN1922457A (zh) * | 2004-02-27 | 2007-02-28 | 应用材料股份有限公司 | 对构图的晶片背面进行快速热退火处理的方法 |
| US20080142497A1 (en) * | 2006-12-14 | 2008-06-19 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
| US20090274454A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
| CN102017102A (zh) * | 2008-05-09 | 2011-04-13 | 应用材料公司 | 用于高压快速热处理的设备和方法 |
Also Published As
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|---|---|
| CN107342252B (zh) | 2020-08-11 |
| US20150093100A1 (en) | 2015-04-02 |
| KR102257567B1 (ko) | 2021-05-31 |
| WO2015047639A1 (en) | 2015-04-02 |
| CN107342252A (zh) | 2017-11-10 |
| CN105556646A (zh) | 2016-05-04 |
| US10665484B2 (en) | 2020-05-26 |
| KR102317055B1 (ko) | 2021-10-26 |
| TWI632637B (zh) | 2018-08-11 |
| US20180047597A1 (en) | 2018-02-15 |
| TW201517209A (zh) | 2015-05-01 |
| KR20210064392A (ko) | 2021-06-02 |
| KR20160064201A (ko) | 2016-06-07 |
| US9793145B2 (en) | 2017-10-17 |
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