KR101048295B1 - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
- Publication number
- KR101048295B1 KR101048295B1 KR1020090100976A KR20090100976A KR101048295B1 KR 101048295 B1 KR101048295 B1 KR 101048295B1 KR 1020090100976 A KR1020090100976 A KR 1020090100976A KR 20090100976 A KR20090100976 A KR 20090100976A KR 101048295 B1 KR101048295 B1 KR 101048295B1
- Authority
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- South Korea
- Prior art keywords
- substrate
- rotating shaft
- temperature
- temperature measuring
- shaft
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 238000009529 body temperature measurement Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 9
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000000427 thin-film deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 반응 공간을 갖는 챔버;상기 반응 공간에 위치하여 기판을 안치하는 기판 안치부;상기 기판 안치부를 지지하고, 회전시키는 회전축부;상기 회전축부 내측에 위치하여 상기 기판의 온도를 측정하는 온도 측정 수단; 및상기 온도 측정 수단이 위치한 상기 회전축부의 표면 영역을 캐핑하는 보온 캡을 포함하는 기판 처리 장치.
- 청구항 1에 있어서,상기 회전축부는, 상기 기판 안치부의 하부 중심 영역에 인접 배치된 회전축과, 상기 회전축의 상측에서 상기 기판 안치부의 가장자리 영역으로 연장되어 상기 기판 안치부를 지지하는 다수의 지지축을 포함하는 기판 처리 장치.
- 청구항 2에 있어서,상기 회전축은 내부가 비어 있는 관 형태로 제작되고, 상기 회전축의 상측 단이 상기 기판 안치부에 인접 배치되며,상기 온도 측정 수단은, 온도를 측정하는 온도 측정 센서를 포함하며,상기 회전축의 상측 단 영역의 내측에 상기 온도 측정 센서가 배치되고,상기 보온 캡은 상기 회전축의 상측 단 영역을 감싸는 기판 처리 장치.
- 청구항 2에 있어서,상기 보온 캡은 상기 회전축의 상측 끝단에 접속된 상부벽과, 상기 회전축의 상측 단 영역의 표면 영역에 접속된 측벽을 포함하고,상기 상부벽이 상기 기판 안치부에 밀착된 기판 처리 장치.
- 청구항 4에 있어서,상기 상부벽에는 상기 기판 안치부를 노출시키는 개구가 마련되고,상기 측벽은 상기 회전축의 외측 표면에 접속된 외측벽과, 상기 회전축의 내측 표면에 접속된 내측벽을 포함하는 기판 처리 장치.
- 청구항 4에 있어서,상기 회전축과 상기 보온 캡의 접속면에는 각기 대응되는 나사산 패턴이 형성된 기판 처리 장치.
- 청구항 2에 있어서,상기 회전축은 쿼츠 재질로 제작되고, 상기 보온 캡은 SiC 및 세라믹 중 적어도 어느 하나의 재질로 제작된 기판 처리 장치.
- 청구항 1에 있어서,상기 회전축부에 회전력을 인가하는 구동 수단; 및상기 챔버 하부에 위치하여 상기 반응 공간을 가열하는 가열 수단을 포함하는 기판 처리 장치.
- 기판을 안치하는 기판 안치부;상기 기판 안치부의 하부 중심 영역에 인접 배치된 회전축과, 상기 회전축의 상측에서 상기 기판 안치부의 가장자리 영역으로 연장되어 상기 기판 안치부를 지지하는 다수의 지지축을 포함하는 회전축부;상기 회전축 내에 위치하여 상기 기판의 온도를 측정하는 온도 측정 수단; 및상기 온도 측정 수단이 위치한 상기 회전축의 표면 영역을 캐핑하는 보온 캡을 포함하는 기판 지지 장치.
- 청구항 9에 있어서,상기 보온 캡은 상기 회전축의 상측 끝단에 접속된 상부벽과,상기 회전축의 상측 단 영역의 표면 영역에 접속된 측벽을 포함하고,상기 상부벽에는 상기 기판 안치부를 노출시키는 개구가 마련되고,상기 측벽은 상기 회전축의 외측 표면에 접속된 외측벽과, 상기 회전축의 내측 표면에 접속된 내측벽을 포함하는 기판 지지 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090100976A KR101048295B1 (ko) | 2009-10-23 | 2009-10-23 | 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090100976A KR101048295B1 (ko) | 2009-10-23 | 2009-10-23 | 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110044354A KR20110044354A (ko) | 2011-04-29 |
KR101048295B1 true KR101048295B1 (ko) | 2011-07-15 |
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KR1020090100976A KR101048295B1 (ko) | 2009-10-23 | 2009-10-23 | 기판 처리 장치 |
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KR (1) | KR101048295B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170138003A (ko) * | 2016-06-03 | 2017-12-14 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107342252B (zh) * | 2013-09-30 | 2020-08-11 | 应用材料公司 | 具有封装的光阻隔件的支撑环 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348395A (en) | 1992-12-11 | 1994-09-20 | General Electric Company | Aspirating pyrometer with platinum thermocouple and radiation shields |
US6164819A (en) | 1995-08-31 | 2000-12-26 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and a method of manufacturing the same |
KR20020087486A (ko) * | 2000-04-06 | 2002-11-22 | 에이에스엠 아메리카, 인코포레이티드 | 유리재질용 장벽코팅 |
JP2006153706A (ja) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | 測温体および気相成長装置 |
-
2009
- 2009-10-23 KR KR1020090100976A patent/KR101048295B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348395A (en) | 1992-12-11 | 1994-09-20 | General Electric Company | Aspirating pyrometer with platinum thermocouple and radiation shields |
US6164819A (en) | 1995-08-31 | 2000-12-26 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and a method of manufacturing the same |
KR20020087486A (ko) * | 2000-04-06 | 2002-11-22 | 에이에스엠 아메리카, 인코포레이티드 | 유리재질용 장벽코팅 |
JP2006153706A (ja) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | 測温体および気相成長装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170138003A (ko) * | 2016-06-03 | 2017-12-14 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
KR102612193B1 (ko) | 2016-06-03 | 2023-12-12 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
Also Published As
Publication number | Publication date |
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KR20110044354A (ko) | 2011-04-29 |
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