CN105553235A - Semiconductor actuating device and power conversion device using same - Google Patents
Semiconductor actuating device and power conversion device using same Download PDFInfo
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- CN105553235A CN105553235A CN201510644671.6A CN201510644671A CN105553235A CN 105553235 A CN105553235 A CN 105553235A CN 201510644671 A CN201510644671 A CN 201510644671A CN 105553235 A CN105553235 A CN 105553235A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a semiconductor actuating device and a power conversion device using the same and provides a following method. The method includes: reducing the operating current (Icl) of a voltage clamp circuit responsible for overvoltage protection in the actuating device of a semiconductor switching element, and suppressing the increase of turn-off loss of the switching element accompanying the operation of the voltage clamping circuit. The semiconductor actuating unit for controlling an on-off state of the semiconductor switching element comprises a control signal output stage circuit for transmitting a control signal to a gate control terminal of the switching element, the voltage clamping circuit connected between an input terminal and the gate control terminal of the switching element, and a detection circuit for detecting a voltage between an output terminal and the gate control terminal of the switching element or a gate control terminal current wherein the control signal output stage circuit lowers the impedance of an output stage of the control signal output stage circuit on the basis of a detected result of the detection circuit during a turn-off period of the semiconductor switching element.
Description
Technical field
The present invention relates to the semiconductor drive device having carried over-voltage protection function and the power-converting device using this semiconductor drive device.
Background technology
Power-converting device headed by inverter realizes power converter by the switch motion of thyristor.As the typical example of this thyristor, widely use the voltage-driven semiconductor device headed by MOS-FET, IGBT.Particularly can carry out switch at a high speed and the IGBT that can control large electric power in the wide spectrum use of the Large Copacity inverter of the use etc. from the low capacity inverter of household electrical appliances to railway.
Semiconductor drive device is needed in order to control such thyristor.Generally, the drive unit of voltage-driven semiconductor has by applying to the grid of thyristor the function that voltage carrys out the conducting state of control element.In addition, semiconductor drive device generally has the superpotential function preventing driven thyristor.
Figure 10 is the conventional example of the drive unit of the IGBT module be made up of IGBT and diode.Applying suitable voltage based on the grid G of signal to IGBT1, controlling making the collector current Ic of conducting between the collector electrode P-emitter N of IGBT1.
At this, resistance 6 and 7 adjusts the rate of change of the voltage Vge between grid G and emitter E by limiting the electric current I rg flowing through grid G.Thus, the rate of change of switching speed, i.e. collector current Ic of IGBT1 and the rate of change of the voltage Vce between collector electrode C and emitter E can be specified suitably.
Prevent function as overvoltage, extensively adopt in the collector electrode C of IGBT1 and the mode of voltage clamping element 3 being connected constant voltage diode etc. between grid G.In this approach, collector voltage becomes excessive when the cut-out of IGBT1 etc., flowing through electric current because constant voltage diode punctures at grid, is constant by making IGBT transition ground conducting by collector voltage clamper.In addition, in order to prevent the overvoltage of the grid of IGBT1, generally between gate-emitter, overvoltage protection diode 9 is possessed.
The exemplary waveforms of the voltage Vge of the collector current Ic when Figure 11 illustrates the cut-out of the IGBT in the formation of Figure 10, collector electrode-between transmitting voltage across poles Vce, grid current Irg and gate-emitter.During the collector electrode-transmitting voltage across poles Vce of IGBT and collector current Ic carries out transition, produce at IGBT and cut off loss.In addition, in this transition period, knownly there will be the step during being referred to as mirror image at grid voltage waveform.
Each electric current when Figure 12 represents that the collector electrode surge voltage of IGBT becomes excessive, voltage clamping element 3 carries out clamper action and the exemplary waveforms of voltage.Produce between collector electrode-emitter in superpotential period, the voltage clamping element 3 be connected with between collector electrode-grid punctures and flows through electric current I cl at clamp circuit, grid voltage rises to more than on state threshold voltage Vth and IGBT conducting, to prevent the overvoltage between collector electrode-emitter.On the other hand, due to elongated during cutting off action because of voltage clamping, therefore there is cutting off the side effect that loss becomes so greatly.
At this, when the shutoff grid voltage of semiconductor drive device being set to Vm, shutoff resistance being set to Rg1, the relation that clamp circuit electric current I cl demand fulfillment is following.
Icl >=(Vth-Vm)/Rg1... (formula 1)
Therefore, make shutoff resistance Rg1 contribute to more greatly reducing clamp current Icl, therefore contribute to improving clamping effect.On the other hand, the further increase cutting off loss can be caused.
At first technical literature
Patent documentation
Patent documentation 1:JP JP 2005-328668 publication
Patent documentation 2:JP JP 2013-126278 publication
In patent documentation 1, as improving the additive method of clamping effect, during to illustrate in during switch motion given, the output voltage of gate driver circuit is remained on the method for the positive voltage being less than threshold voltage vt h.So grid voltage is remained in the method for positive voltage, due to between the positive-negative power of resistance connection drive circuit, therefore in order to prevent the surplus heating of resistance from needing to keep voltage with high impedance.For this reason, the potential change when grid is mixed into noise becomes large, occurs that grid misleads and produces the risk of unnecessary loss.And then, in the method, although be previously determined the feedfoward control during the positive voltage described in maintenance, but because required clamper period Tcl (with reference to Figure 12) changes according to the shape Condition difference of the surge occurred, therefore need to guarantee that enough surplus capacities are to set clamper period Tcl.Thus, the excess delay of cut-out can be caused, have the problem bringing loss to increase.
On the other hand, in method following shown in patent documentation 2: when carrying out action at clamp circuit, by making the pass resistance break of the output-stage circuit in next cycle make more greatly switch motion comparatively slow, suppress surge voltage.In such method, come during optimization makes pass resistance break larger, can suppress the increase of the surplus of cut-out loss by the FEEDBACK CONTROL of action detecting clamp circuit.But in the method, need to draw feedback wiring from clamp circuit to output-stage circuit.For this reason, wiring number required when not only wiring between semiconductor drive device with IGBT being connected increases, and also can make output-stage circuit misoperation because having superposed noise in winding wiring, worries the problem causing the increase, arm short circuit etc. of cutting off loss.
Summary of the invention
In order to solve described problem, semiconductor drive device involved in the present invention controls the ON/OFF state of thyristor, and described semiconductor drive device possesses: to the control signal output-stage circuit of the gate control terminal transfer control signal of switch element; Be connected to the voltage clamp circuit between the input terminal of switch element and gate control terminal; And the testing circuit of voltage between the lead-out terminal of sense switch element and gate control terminal or gate control terminal electric current, control signal output-stage circuit reduces the impedance of the output stage of control signal output-stage circuit in the disengagement phase of thyristor based on the testing result of testing circuit.
In addition, as the thyristor in the present invention, can apply in the element of IGBT or MOSFET etc., input terminal is corresponding with the collector terminal in IGBT and the drain terminal in MOSFET respectively, and lead-out terminal is corresponding with the emitter terminal in IGBT and the source terminal in MOSFET respectively.
The effect of invention
According to the present invention, by with the timing of the impedance of the voltage of control terminal or gallon control switching circuit, achieve the control corresponding to clamper action period Tcl, thus the increase cutting off loss is suppressed in Min., and inhibit the length of the holding wire of sensing point to impedance switching part from voltage or electric current, thus can superimposed noise in holding wire be suppressed.
Accompanying drawing explanation
Fig. 1 is the block diagram of the basic comprising of the semiconductor drive device represented involved by embodiments of the invention 1.
Fig. 2 is the 1st action exemplary waveforms figure of the semiconductor drive device involved by embodiments of the invention 1.
Fig. 3 is the 2nd action exemplary waveforms figure of the semiconductor drive device involved by embodiments of the invention 1.
Fig. 4 is the block diagram of the concrete example of the output-stage circuit of the semiconductor drive device represented involved by embodiments of the invention 1.
Fig. 5 is the block diagram of the 1st concrete example of the voltage clamp circuit of the semiconductor drive device represented involved by embodiments of the invention 1.
Fig. 6 is the block diagram of the 2nd concrete example of the voltage clamp circuit of the semiconductor drive device represented involved by embodiments of the invention 1.
Fig. 7 is the block diagram of the 3rd concrete example of the voltage clamp circuit of the semiconductor drive device represented involved by embodiments of the invention 1.
Fig. 8 is the block diagram of the basic comprising of the semiconductor drive device represented involved by embodiments of the invention 2.
Fig. 9 is the block diagram of the basic comprising of the power-converting device represented involved by embodiments of the invention 3.
Figure 10 is the block diagram of the existing formation representing the semiconductor drive circuit with active clamp function.
Figure 11 is the cut-out exemplary waveforms figure of the thyristor in existing formation, the situation that special expression surge voltage is little.
Figure 12 is the cut-out exemplary waveforms figure of the thyristor in existing formation, and because surge voltage is comparatively large, the active clamp function of semiconductor drive device has carried out the situation of action in special expression.
The explanation of label
T1, T2 grid output-stage circuit
Rg1 ~ Rg3 resistance
Cg1 speed-up condenser
Irg resistance On current
Dz1 ~ Dz8 voltage clamping element
Vge gate-emitter voltage
Vth threshold voltage of the grid
Qg gate charge
Ic collector current
Vce collector emitter voltage
Vcl collector electrode clamp voltage
The electric current of Icl voltage clamp circuit
During Tcl voltage clamping
SIN driving instruction input signal
SF grid decision signal
The impedance of Z1 ~ Z3 output-stage circuit
Mz1 clamp circuit switching mosfet
Dzg1 clamp circuit gate protection element
Dzg2 clamp circuit rectifier diode
Czg1 clamp circuit grid input capacitance
Rz1 ~ Rz3 clamp circuit resistance
Cz1 clamp circuit series capacitor
Vdc main circuit power voltage
Vp semiconductor drive device positive voltage
Vm semiconductor drive device negative supply voltage
Le module stray inductance
CIGBT collector electrode main terminal
EIGBT emitter main terminal
GIGBT gate control terminal
CaIGBT collector electrode sense terminal
EaIGBT emitter control terminal
Gd semiconductor drive device gate control terminal
Ed semiconductor drive device emitter control terminal
600 power-converting devices
Q0, Q11 ~ Q16 thyristor
D0, D11 ~ D16 rectifier cell
GD11 ~ GD16 semiconductor drive device
AC11 ~ AC16 voltage clamp circuit
M1 motor
L1 higher level's logic section
Embodiment
Following as implementing form of the present invention, with reference to accompanying drawing, embodiment 1 ~ 3 is described successively.In addition, be described for IGBT as semiconductor below, but be not limited thereto, can also be used in the drive unit of other general semiconductor.
Embodiment 1
[formation of semiconductor drive device]
Fig. 1 is the block diagram of the basic comprising of the semiconductor drive device represented involved by embodiments of the invention 1.In the present embodiment, assuming that situation about will be connected between the gate control terminal G of IGBT and the gate control terminal Gd of semiconductor drive device and between the emitter control terminal Ea of IGBT and the emitter control terminal Ed of semiconductor drive device respectively with multiple twin wiring etc.In IGBT module side, between collector electrode sense terminal Ca with gate terminal G, be connected voltage clamp circuit, prevent the overvoltage of IGBT element.In addition, the gate control terminal G of IGBT is connected via avalanche diode Dz1, Dz2 of constant voltage diode with emitter control terminal Ea.Avalanche diode Dz1, Dz2 make current lead-through from gate control terminal to emitter control terminal when grid voltage exceedes given voltage, make the proof voltage that can not exceed the grid of thyristor because of the voltage that exports from semiconductor drive device and the voltage exported from voltage clamp circuit.Semiconductor drive device, according to the driving instruction SIN received from instruction department, applies voltage by making the output-stage circuit of impedance variable to the grid of IGBT.At this, as the method for impedance variation making output-stage circuit, in the present embodiment, the testing result based on the voltage detecting circuit of the voltage monitored between gate-emitter carrys out control group.
[action of semiconductor drive device]
Fig. 2 is the action exemplary waveforms figure of the semiconductor drive device involved by the 1st action case of embodiments of the invention 1.When gate-emitter voltage Vge being reduced receiving the driving instruction SIN of gate turn-off, collector voltage Vce starts to increase (t1).Afterwards, when big current blocks etc. collector voltage increase further and collector electrode-grid voltage across poles arrives the operation voltage rank of voltage clamp circuit time (t2), electric current flows from collector electrode side direction gate electrode side via voltage clamp circuit.Thus, grid voltage rises to more than threshold voltage of the grid Vth, IGBT conducting and by collector voltage clamper at constant voltage Vcl.At this, due to the impedance of output-stage circuit is redefined for large value Z1, therefore can the clamp current in order to meet formula 1 and needs be suppressed less.
Afterwards, when surge relaxes (t3), clamp current reduces thus grid voltage reduces.Terminate during voltage detecting circuit detects mirror image and between gate-emitter, voltage is reduced to below assigned voltage value (in Fig. 4 t4), voltage detecting circuit generates grid decision signal SF and also sends to control signal output-stage circuit.Based on this grid decision signal SF, output-stage circuit makes grid output impedance be reduced to Z2, accelerates to cut off action.At this, voltage between the gate-emitter at the end of during assigned voltage value is set as mirror image.
Fig. 3 is the action exemplary waveforms figure of the semiconductor drive device involved by the 2nd action case of embodiments of the invention 1.Compare with Fig. 2, difference is: the impedance Z 1 in during the impedance Z 3 making grid voltage Vge start the t1 grid output stage in the past of reduction is less than clamper.That is, make impedance increase to Z4 from Z3 in the timing of above-mentioned t1, in the timing of above-mentioned t4, impedance is reduced to Z5 from Z4.The timing that impedance is reduced, owing to similarly can realize at above-mentioned voltage detecting circuit, therefore omits detailed description.At this, Z3 is set greater than Z5 and is less than the value of Z4.
In addition, in the example of fig. 3, show the linear example switching the impedance Z 3 ~ Z5 of 3 values, but clearly can be applied in more Multistage Control, nonlinear Control, low current control etc.As concrete example when carrying out Multistage Control, voltage detecting circuit possesses multiple assigned voltage value, voltage detecting value Vge whenever between emitter terminal and gate control terminal becomes below each given magnitude of voltage, just grid decision signal is repeatedly exported to control signal output-stage circuit, control signal output-stage circuit carrys out the impedance of the output stage of repeatedly switch-over control signal output-stage circuit based on the grid decision signal repeatedly received from testing circuit, thus little by little makes impedance reduce.
[effect of embodiment 1]
Semiconductor drive device provided by the present invention is due to can must be higher by output stage impedance setting during clamper action, and therefore when clamper action, grid voltage rises at once.Thus, the electric current I cl of the voltage clamp circuit of the overvoltage protection bearing semiconductor drive device can be reduced, because using small-sized clamp members can the miniaturization of realizing circuit.In addition, due to the rising by the collector voltage in during improving clamper function and suppressing clamper, the set point of clamp voltage therefore can be made higher, thus decrease the frequency that active clamp action occurs and the self-heating reducing switch element.
And then, owing to the timing of the output stage impedance of reduction semiconductor drive device being made to comply with clamper action period Tcl based on the result of detection of grid voltage, therefore the increase cutting off loss can be suppressed to Min..Prior art is the feedfoward control (patent documentation 1) causing the increase cutting off loss, need the FEEDBACK CONTROL (patent documentation 2) of unnecessary detectable signal line, on the other hand, the present invention adopts the accurate FEEDBACK CONTROL utilizing and the existing grid wiring be connected between IGBT module with semiconductor drive device is carried out the action of detecting voltage clamp circuit indirectly, can the action of detecting voltage clamp circuit indirectly in the position closer to semiconductor drive device, therefore compared with described prior art, the length of detectable signal line can be shortened, thus the stability contorting of the impact being difficult to be subject to noise can be carried out.
The concrete example > of the output-stage circuit of < embodiment 1
The concrete example of the output-stage circuit in embodiment 1 is shown with reference to figure 4.Output-stage circuit is made up of 2 output stage T1 and T2,3 resistance Rg1 and Rg2 and Rg3, speed-up condenser Cg1 and the resistance switch control portion based on grid decision signal SF switching output resistance.
Output stage T1 exports any person of high side voltage Vp and low-pressure side voltage Vm based on the driving instruction SIN received.The outlet side of output stage T1, via the resistance Rg1 be connected in series and resistance Rg2, is connected with gate control terminal Gd.Speed-up condenser Cg1 is connected in parallel at resistance Rg1.In addition, resistance is cut and is made output stage T2 action for control part based on the grid decision signal SF received, and exports low-pressure side voltage Vm, or blocking circuit.The outlet side of output stage T2 is connected with gate control terminal Gd via resistance Rg3.In addition, the intermediate potential of 2 voltage source V p and Vm is connected with emitter control terminal Ed.
In moment before t1 in figure 3, because grid current makes the speed-up condenser Cg1 be connected in parallel with Rg1 become bypass, therefore the shutoff resistance of output stage T1 becomes Rg2 (Z3).At this, in order to select the electric capacity of speed-up condenser Cg1 arriving the timing complete charge of the t1 during mirror image, the shutoff resistance that in Fig. 3, t1 is later is thus increased to [Rg1+Rg2] (Z4).On the other hand, during mirror image terminate and grid voltage reduce time (in Fig. 3 t4), when representing that grid voltage is reduced to the grid decision signal SF of below setting from voltage detecting circuit input, resistance switch control portion makes output stage T2 conducting, make low-pressure side voltage Vm be connected with resistance Rg3 the parallel circuits forming Rg3 and Rg1+Rg2, make shutoff resistance be reduced to Z5.At this, Rg3 < Rg1+Rg2, accelerates the increase that the later cut-out of t4 suppresses switching loss.
In the diagram, possess speed-up condenser Cg1 and form in order to realize the 2nd action case shown in Fig. 3 and be described, but can also form by what remove speed-up condenser Cg1 from Fig. 4 the 1st action case realized shown in Fig. 2.
At this, the shutoff resistance (Z1, Z4) determined by resistance Rg1+Rg2 is the resistance value becoming more than " ([threshold voltage of the grid Vth]-[low-pressure side voltage Vm])/[the electric current I cl of voltage clamp circuit] ", expects to set become same degree with this resistance value.
1st concrete example > of the voltage clamp circuit of < embodiment 1
Fig. 5 represents the 1st concrete example of the voltage clamp circuit of the present embodiment.Being the formation be connected in series by multiple avalanche diode Dz3 ~ Dz8, is the most simply form.
2nd concrete example > of the voltage clamp circuit of < embodiment 1
Fig. 6 represents the 2nd concrete example of the voltage clamp circuit of the present embodiment.It is the formation being connected in series capacitor Cz1 at the multiple avalanche diode Dz3 ~ Dz8 be connected in series further.By adding the capacitor making direct current end to Fig. 5, when the supply voltage of contingency main circuit increases and makes collector voltage Vce exceed clamp voltage Vcl, also can prevent from flowing continuously through electric current at voltage clamp circuit.
3rd concrete example > of the voltage clamp circuit of < embodiment 1
Fig. 7 represents the 3rd concrete example of the voltage clamp circuit of the present embodiment.Be connected in parallel MOSFET at a part of avalanche diode of the multiple avalanche diode Dz3 ~ Dz8 be connected in series and form.The circuit be constructed as follows, that is: between the grid of the MOSFET tie point that is connected to multiple avalanche diode and gate control terminal, the voltage of the avalanche diode be connected in parallel or electric current rise and conducting voltage more than MOSFET time, made a part of avalanche diode become bypass by MOSFET.In this concrete example, even if in voltage clamp circuit action, collector voltage Vce also continues to rise, MOSFET conducting and make clamp voltage Vcl reduce, can prevent the overvoltage of element.
[embodiment 2]
Fig. 8 is the block diagram of the basic comprising of the semiconductor drive device represented involved by embodiments of the invention 2.In the present embodiment, as the method for impedance variation making output-stage circuit, difference from Example 1 is to control based on the testing result of the current detection circuit monitoring grid current.The concrete example of control sequence and circuit and embodiment 1 equally, omit the description.Current detection circuit, when the absolute value of grid current reduces and becomes below rated current value (in Fig. 3 t4), exports grid decision signal SF.Or, the absolute value that also can be configured to the gate charge Qg obtained when carrying out integration to the grid current detected becomes below setting, export grid decision signal SF.At this, the grid current at the end of during this rated current value or the regulation quantity of electric charge can being set as mirror image or the absolute value of gate charge.
In the present embodiment, due to also same with embodiment 1, the timing of the output stage impedance of reduction semiconductor drive device can be made to conform to clamper action period Tcl based on the result of detection of grid current, therefore the increase cutting off loss can be suppressed to Min..
As the concrete example of situation carrying out Multistage Control, current detection circuit possesses multiple rated current value, whenever the current detection value Irg of gate control terminal or its integrated value Qg becomes below each set-point, grid decision signal is repeatedly exported to control signal output-stage circuit, control signal output-stage circuit carrys out the impedance of the output stage of repeatedly switch-over control signal output-stage circuit based on the grid decision signal repeatedly received from testing circuit, thus little by little makes impedance reduce.
[embodiment 3]
Fig. 9 is the figure that the power-converting device applying semiconductor drive device of the present invention is shown as embodiment 3.Semiconductor drive device involved by the example of described embodiment 1 or embodiment 2 is used as the drive unit of the thyristor in power-converting device by the power-converting device involved by embodiment 3.
As shown in Figure 9, the power-converting device 600 involved by embodiment 3 is configured to be possessed: thyristor Q11 ~ Q16; Diode D11 ~ D16; Semiconductor drive device GD11 ~ GD16; Voltage clamp circuit AC11 ~ AC16 and the control signal of switch motion and the higher level logic section L1 of driving instruction signal are produced to thyristor Q11 ~ Q16.In addition, the power-converting device 600 involved by embodiment 3 is the DC-to-AC converter direct current power of the DC power supply 601 of voltage Vdc being transformed into alternating electromotive force.
In addition, in embodiment 3, use IGBT as thyristor Q11 ~ Q16, but be not limited thereto, other switch elements such as MOSFET can also be used to form.
Power-converting device 600 connects 3 groups of upper underarms that the polarity of 2 thyristors (Q11 and Q12, Q13 and Q14, Q15 and Q16) is as one man connected in series between the positive and negative terminal of DC power supply 601.In addition, at the emitter-inter-collector of each thyristor Q11 ~ Q16, the diode D11 ~ D16 refluxed for making load current is with thyristor opposite polarity and be connected respectively in parallel.In addition, between the collector electrode sense terminal and gate terminal of each thyristor Q11 ~ Q16, connect voltage clamp circuit AC11 ~ AC16.Semiconductor drive device GD11 ~ the GD16 of the driving instruction signal of output switch is connected respectively in gate control terminal.In addition, the tie point of 2 thyristors (Q11 and Q12, Q13 and Q14, Q15 and Q16) be connected in series becomes the lead-out terminal of interchange respectively, is connected with the three-phase alternating-current motor M1 as load.
Further, power-converting device 600 controls the switch motion of thyristor Q11 ~ Q16 respectively via semiconductor drive device GD11 ~ GD16 by higher level logic section L1, provide alternating electromotive force to the three-phase alternating-current motor M1 be connected with ac terminal.Power-converting device 600 produces the driving instruction signal for each thyristor Q11 ~ Q16 by higher level logic section L1, via this semiconductor drive device GD11 ~ GD16, this driving instruction signal is sent to the gate terminal (control terminal) of thyristor Q11 ~ Q16, carries out power converter action thus.
At this, when producing surge voltage when big current blocks etc. in power-converting device 600, making the gate turn-on of thyristor by voltage clamp circuit, is constant by collector voltage clamper.When clamper release, detect the change of grid voltage or grid current immediately, and reduce the impedance of output-stage circuit, the increase cutting off loss can be suppressed.
In addition, in embodiment 3, as the example be used in by semiconductor drive device of the present invention in power-converting device, the situation of DC-to-AC converter is described, but be not limited thereto, can also be used in other power-converting device such as DC-to-DC converter, AC-DC converter.
Claims (10)
1. a semiconductor drive device, control the ON/OFF state of thyristor, the feature of described semiconductor drive device is to possess:
Control signal output-stage circuit, it is to the gate control terminal transfer control signal of described switch element;
Voltage clamp circuit, between its input terminal being connected to described switch element and gate control terminal; With
Testing circuit, it detects voltage between the lead-out terminal of described switch element and described gate control terminal or described gate control terminal electric current,
Described control signal output-stage circuit is in the disengagement phase of described thyristor, and the testing result based on described testing circuit reduces the impedance of the output stage of this control signal output-stage circuit.
2. semiconductor drive device according to claim 1, is characterized in that,
Described control signal output-stage circuit, in the disengagement phase of described thyristor, the impedance of the output stage of described control signal output-stage circuit is increased, and the testing result afterwards based on described testing circuit makes the impedance of the output stage of described control signal output-stage circuit reduce.
3. semiconductor drive device according to claim 2, is characterized in that,
Described control signal output-stage circuit has: resistor, and the output stage of itself and this control signal output-stage circuit is connected in series; And speed-up condenser, it is connected with described capacitor in parallel,
In the disengagement phase of described thyristor, described speed-up condenser is charged, and described resistor makes the impedance of the output stage of described control signal output-stage circuit increase thus.
4. the semiconductor drive device according to any one of claims 1 to 3, is characterized in that,
Voltage detecting value when between the lead-out terminal and described gate control terminal of described switch element becomes below given magnitude of voltage, or when the absolute value of the current detection value of described gate control terminal becomes below given current value, or when the integrated value of described current detection value becomes below the given quantity of electric charge, described testing circuit exports grid decision signal to described control signal output-stage circuit
Described control signal output-stage circuit, when receiving described grid decision signal, makes the impedance of the output stage of described control signal output-stage circuit reduce.
5. semiconductor drive device according to claim 4, is characterized in that,
Magnitude of voltage between the lead-out terminal of the described switch element at the end of during mirror image when described given voltage value is cut-out and described gate control terminal,
The current absolute value of the described gate control terminal at the end of during described given current value is set as mirror image when cutting off,
The gate charge amount of the described switch element at the end of during the described given quantity of electric charge is set as mirror image when cutting off.
6. the semiconductor drive device according to claim 4 or 5, is characterized in that,
Described testing circuit has multiple described given magnitudes of voltage or described given current value or the given quantity of electric charge, voltage detecting value whenever between the lead-out terminal and described gate control terminal of described switch element becomes below each given magnitude of voltage, described grid decision signal is repeatedly exported to described control signal output-stage circuit, or whenever the absolute value of the current detection value of described gate control terminal becomes below each given current value, described grid decision signal is repeatedly exported to described control signal output-stage circuit, or whenever the integrated value of the current detection value of described gate control terminal becomes below each given quantity of electric charge, described grid decision signal is repeatedly exported to described control signal output-stage circuit,
Described control signal output-stage circuit, based on the described grid decision signal repeatedly received from described testing circuit, repeatedly switches the impedance of the output stage of described control signal output-stage circuit, thus little by little makes impedance reduce.
7. the semiconductor drive device according to any one of claim 1 ~ 6, is characterized in that,
Described voltage clamp circuit has voltage clamping diode.
8. the semiconductor drive device according to any one of claim 1 ~ 7, is characterized in that,
Described voltage clamp circuit has: voltage clamping diode; And the capacitor to be connected with described voltage clamping Diode series.
9. the semiconductor drive device according to any one of claim 1 ~ 8, is characterized in that,
Described voltage clamp circuit has: the multiple voltage clamping diodes be connected in series; And switch element, a part for itself and described multiple voltage clamping diode is connected in parallel, and the curtage based on described voltage clamping diode carries out ON/OFF.
10. a power-converting device, possess multiple being connected in series by multiple described thyristor and the upper underarm formed, possess multiple semiconductor drive devices that the ON/OFF of each thyristor of described multiple thyristor is controlled
The feature of described power-converting device is,
The semiconductor drive device of described multiple semiconductor drive device according to any one of claim 1 ~ 9 is formed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-216814 | 2014-10-24 | ||
| JP2014216814A JP6362996B2 (en) | 2014-10-24 | 2014-10-24 | Semiconductor drive device and power conversion device using the same |
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| CN201510644671.6A Active CN105553235B (en) | 2014-10-24 | 2015-10-08 | Semiconductor drive device and the power-converting device using the semiconductor drive device |
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| Country | Link |
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| JP (1) | JP6362996B2 (en) |
| CN (1) | CN105553235B (en) |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0579561A1 (en) * | 1992-07-16 | 1994-01-19 | STMicroelectronics S.A. | Protection circuit for power components against overvoltages |
| EP0810731A2 (en) * | 1996-05-28 | 1997-12-03 | Mitsubishi Denki Kabushiki Kaisha | Voltage-controlled transistor drive circuit |
| JP2002084174A (en) * | 2000-09-08 | 2002-03-22 | Denso Corp | Load drive circuit |
| US20070200602A1 (en) * | 2006-02-27 | 2007-08-30 | Katsumi Ishikawa | Drive circuit for power semiconductor switching device |
| CN101154883A (en) * | 2006-09-27 | 2008-04-02 | 株式会社日立制作所 | Semiconductor power conversion apparatus |
| CN101222801A (en) * | 2007-01-09 | 2008-07-16 | 中华映管股份有限公司 | Current control device |
| CN102185286A (en) * | 2011-05-04 | 2011-09-14 | 武汉理工大学 | High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit |
| JP5179954B2 (en) * | 2008-06-03 | 2013-04-10 | 株式会社日立製作所 | Power conversion device provided with gate driving device for semiconductor switching element |
| CN203607833U (en) * | 2013-10-25 | 2014-05-21 | 海能达通信股份有限公司 | An explosion-proof electric device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3752943B2 (en) * | 2000-01-31 | 2006-03-08 | 株式会社日立製作所 | Semiconductor device driving apparatus and control method thereof |
| JP3886876B2 (en) * | 2002-01-17 | 2007-02-28 | 三菱電機株式会社 | Power semiconductor element drive circuit |
| JP4023336B2 (en) * | 2003-02-20 | 2007-12-19 | 株式会社日立製作所 | Method and apparatus for driving semiconductor device |
| JP4506276B2 (en) | 2004-05-17 | 2010-07-21 | 富士電機システムズ株式会社 | Drive circuit for self-extinguishing semiconductor device |
| JP4968487B2 (en) * | 2010-03-08 | 2012-07-04 | サンケン電気株式会社 | Gate drive circuit |
| JP5927739B2 (en) * | 2011-12-14 | 2016-06-01 | 富士電機株式会社 | Semiconductor device |
| JP6105431B2 (en) * | 2013-08-01 | 2017-03-29 | 東芝三菱電機産業システム株式会社 | Gate control circuit for power semiconductor device |
-
2014
- 2014-10-24 JP JP2014216814A patent/JP6362996B2/en not_active Expired - Fee Related
-
2015
- 2015-10-08 CN CN201510644671.6A patent/CN105553235B/en active Active
- 2015-10-09 GB GB1517910.4A patent/GB2533677B/en active Active
- 2015-10-22 DE DE102015220594.0A patent/DE102015220594A1/en not_active Ceased
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0579561A1 (en) * | 1992-07-16 | 1994-01-19 | STMicroelectronics S.A. | Protection circuit for power components against overvoltages |
| EP0810731A2 (en) * | 1996-05-28 | 1997-12-03 | Mitsubishi Denki Kabushiki Kaisha | Voltage-controlled transistor drive circuit |
| JP2002084174A (en) * | 2000-09-08 | 2002-03-22 | Denso Corp | Load drive circuit |
| US20070200602A1 (en) * | 2006-02-27 | 2007-08-30 | Katsumi Ishikawa | Drive circuit for power semiconductor switching device |
| CN101154883A (en) * | 2006-09-27 | 2008-04-02 | 株式会社日立制作所 | Semiconductor power conversion apparatus |
| CN101222801A (en) * | 2007-01-09 | 2008-07-16 | 中华映管股份有限公司 | Current control device |
| JP5179954B2 (en) * | 2008-06-03 | 2013-04-10 | 株式会社日立製作所 | Power conversion device provided with gate driving device for semiconductor switching element |
| CN102185286A (en) * | 2011-05-04 | 2011-09-14 | 武汉理工大学 | High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit |
| CN203607833U (en) * | 2013-10-25 | 2014-05-21 | 海能达通信股份有限公司 | An explosion-proof electric device |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107370353A (en) * | 2016-05-11 | 2017-11-21 | 法雷奥电机控制系统公司 | Switching system and the power converter for including such switching system |
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| CN108063612B (en) * | 2016-11-09 | 2024-03-08 | 富士电机株式会社 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
| CN108809060A (en) * | 2017-05-01 | 2018-11-13 | 富士电机株式会社 | Driving device and switching device |
| CN108809060B (en) * | 2017-05-01 | 2023-11-10 | 富士电机株式会社 | Driving device and switching device |
| CN107947542A (en) * | 2017-12-20 | 2018-04-20 | 西安中车永电电气有限公司 | A kind of driving circuit device of two-stage clamper |
| CN110011522A (en) * | 2018-01-05 | 2019-07-12 | 台达电子工业股份有限公司 | Waveform changing circuit and gate driving circuit |
| CN111630744A (en) * | 2018-01-18 | 2020-09-04 | Abb电网瑞士股份公司 | Arc extinguishing device and multistage arc extinguishing equipment |
| CN111615783B (en) * | 2018-02-02 | 2023-10-10 | 株式会社安川电机 | Semiconductor element driving circuit, semiconductor element driving method, and motor control device |
| CN111615783A (en) * | 2018-02-02 | 2020-09-01 | 株式会社安川电机 | Semiconductor element drive circuit, semiconductor element drive method, and motor control device |
| CN110277382A (en) * | 2018-03-14 | 2019-09-24 | 富士电机株式会社 | Semiconductor device and device |
| CN108957278B (en) * | 2018-08-10 | 2024-03-29 | 中国矿业大学 | Based on gate charge Q g High-power IGBT fault diagnosis and protection method and device |
| CN108957278A (en) * | 2018-08-10 | 2018-12-07 | 中国矿业大学 | Based on gate charge QgHigh-power IGBT fault diagnosis and guard method and device |
| CN109302169A (en) * | 2018-08-23 | 2019-02-01 | 湖南强军科技有限公司 | A kind of SiC MOSFET Drive Protecting Circuit and its guard method |
| CN109302169B (en) * | 2018-08-23 | 2022-04-22 | 北京长峰天通科技有限公司 | SiC MOSFET drive protection circuit and protection method thereof |
| CN112640307A (en) * | 2018-08-28 | 2021-04-09 | 西门子股份公司 | Operation of insulated gate bipolar transistor |
| CN112640307B (en) * | 2018-08-28 | 2024-05-28 | 西门子股份公司 | Method for operating an IGBT and gate driver |
| CN113056864A (en) * | 2018-11-20 | 2021-06-29 | 株式会社日立产业机器 | Power conversion device |
| CN113056864B (en) * | 2018-11-20 | 2023-10-13 | 株式会社日立产业机器 | power conversion device |
| CN111416602A (en) * | 2019-01-08 | 2020-07-14 | 三垦电气株式会社 | Semiconductor device with a plurality of semiconductor chips |
| CN112134256A (en) * | 2019-06-25 | 2020-12-25 | 株式会社东芝 | Power conversion device |
| CN112134256B (en) * | 2019-06-25 | 2024-04-16 | 株式会社东芝 | Power conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2533677B (en) | 2017-06-07 |
| JP6362996B2 (en) | 2018-07-25 |
| CN105553235B (en) | 2018-02-02 |
| JP2016086490A (en) | 2016-05-19 |
| GB2533677A (en) | 2016-06-29 |
| DE102015220594A1 (en) | 2016-04-28 |
| GB201517910D0 (en) | 2015-11-25 |
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