CN105552007A - Device and method for improving corrosion uniformity of chip - Google Patents

Device and method for improving corrosion uniformity of chip Download PDF

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Publication number
CN105552007A
CN105552007A CN201610101512.6A CN201610101512A CN105552007A CN 105552007 A CN105552007 A CN 105552007A CN 201610101512 A CN201610101512 A CN 201610101512A CN 105552007 A CN105552007 A CN 105552007A
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CN
China
Prior art keywords
wafer
spray equipment
spray
chemical liquid
control valve
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Granted
Application number
CN201610101512.6A
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Chinese (zh)
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CN105552007B (en
Inventor
刘伟
许璐
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Beijing Sevenstar Electronics Co Ltd
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Beijing Sevenstar Electronics Co Ltd
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Priority to CN201610101512.6A priority Critical patent/CN105552007B/en
Publication of CN105552007A publication Critical patent/CN105552007A/en
Application granted granted Critical
Publication of CN105552007B publication Critical patent/CN105552007B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Abstract

The invention discloses a device and method for improving corrosion uniformity of a chip. The device comprises a first spraying arm and a first spraying device, wherein the first spraying device is arranged on the first spraying arm capable of driving the first spraying device to rotate and/or lift, the length of the first spraying arm is consistent with the radius or diameter of the chip, and a chemical liquid sprayed from the first spraying device can instantly and simultaneously cover the surface of the chip. By arranging the first spraying device, the chemical liquid can instantly and simultaneously cover the surface of the chip with the high-speed rotation state of the chip during spraying the chemical liquid, so that all parts of the surface of the chip simultaneously react with the chemical liquid, the problem that the corrosion rate at an initial spraying point of the chemical liquid is higher than those of other parts of the chip in the prior art is solved, and the corrosion uniformity of the chip is improved; and further, during the chip corrosion process, the corrosion rate of the chip also can be accurately controlled by adjusting the swinging rate of a second spraying device, and the corrosion uniformity of the chip is further improved.

Description

A kind of device and method improving etching uniformity
Technical field
The present invention relates to semiconductor device and processing and manufacturing field, more particularly, relate to a kind of device and method improving etching uniformity.
Background technology
Along with constantly reducing of integrated circuit feature size, to the cleannes of wafer surface oxide-film and the requirement of evenness more and more higher, directly can affect the quality of subsequent technique as wafer surface oxide thickness transfinites, thus cause the degradation of integrated circuit (IC) chip, product yield is declined.Although the evenness of oxide-film can control by changing oxidation process conditions, still need to improve further the uniformity of wafer thickness after this technique.Monolithic wet etching is due to without cross pollution with the advantage such as zonal corrosion can become a kind of technology of very important raising film thickness uniformity.But along with the continuous increase of wafer size, the uniformity precisely controlling monolithic wet etching speed and corrosion also becomes more and more has challenge.
In existing technique, utilize spray arm structure to spray chemical liquid to the wafer surface rotated, understand with wafer surface material generation chemical reaction thus erode the unwanted oxide-film of wafer surface or coating rete.But show according to current process results, the position that wafer surface corrosion rate everywhere and spray arm play specking is closely related, namely rise specking place corrosion rate higher than wafer other everywhere, therefore cause the uniformity of wafer surface corrosion rate to be deteriorated, and this phenomenon can along with the rising of the corrosion increase of liquor strength and temperature become more and more serious.If the etching time increasing wafer surface contributes to the uniformity improving wafer surface corrosion rate, but will certainly cause the reduction of chip production efficiency simultaneously.Therefore, the problem how solving etching lack of homogeneity within the shorter process time becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The object of the present invention is to provide a kind of device and method improving etching uniformity, thus solve chemical liquid playing specking place corrosion rate higher than other problems everywhere of wafer, improve etching uniformity.
The present invention solves the problems of the technologies described above the technical scheme adopted to be to provide a kind of device improving etching uniformity, comprise the chip carrier for bearing wafer, described chip carrier can drive wafer to rotate to presetting rotary speed, also comprise the first spray arm and the first spray equipment, described first spray equipment be arranged on can drive its rotate and/or lifting the first spray arm on, wherein, the length of described first spray equipment is consistent with the radius of described wafer or diameter, can at the instantaneous uniform fold chemical liquid of wafer surface, it has the hollow cavity for splendid attire chemical liquid, the upper surface of described hollow cavity is communicated with the first water influent pipeline being used for providing chemical liquid, described first water influent pipeline is provided with the first control valve to control the circulation of chemical liquid, the lower surface of described hollow cavity is provided with some equally distributed spray-holes and the second control valve, described second control valve controls the keying of each spray-hole simultaneously, the chemical liquid sprayed to make described spray-hole covers described wafer surface simultaneously.
Preferably, the shape of described first spray equipment is cuboid, segment or cylinder, and when the shape of described first spray equipment is cuboid, the length of described cuboid is consistent with the radius of described wafer or diameter; When the shape of described first spray equipment is segment, the length of side of described segment is consistent with the radius of described wafer; When the shape of described first spray equipment is cylinder, described cylindrical diameter is consistent with the diameter of described wafer.
Preferably, the liquid level sensor for sensing chemical solution liquid level is provided with in the hollow cavity of described first spray equipment.
Preferably, described liquid level sensor has display lamp, and when chemical solution reaches default liquid level, described display lamp lights.
Preferably, the device improving etching uniformity also comprises the second spray arm and the second spray equipment, described second spray equipment be arranged on it can be driven to rotate and/or lifting the second spray arm on, described second spray equipment is used for an end margin at wafer to moving reciprocatingly between other end edge and spraying chemical liquid.
Preferably, described second spray equipment is communicated with the second water influent pipeline being used for providing chemical liquid, described second water influent pipeline has the 3rd control valve controlling chemical liquid circulation.
Preferably, described second spray arm is provided with velocity transducer and speed regulator, described velocity transducer is for sensing the flutter rate of described second spray equipment above wafer, and described speed regulator is for adjusting the flutter rate of described second spray equipment above wafer.
The present invention also provides a kind of method improving etching uniformity, comprises the following steps:
Step S01: wafer to be cleaned is provided and is carried on chip carrier, chip carrier drives wafer to rotate with default rotary speed;
Step S02: the first spray equipment is rotated from home position and is elevated the predeterminated position above wafer, with the radius or the diameter range that make the chemical liquid of described first spray equipment ejection can cover described wafer simultaneously, simultaneously, close the second control valve of spray-hole, open the first control valve of the first water influent pipeline, until the chemical liquid in hollow cavity reaches default liquid level;
Step S03: the second control valve opening spray-hole, the chemical liquid sprayed to make described spray-hole covers the wafer surface of rotation simultaneously;
Step S04: the first spray equipment is rotated from predeterminated position and is elevated go back to home position, again the second spray equipment rotated from home position and be elevated the predeterminated position above wafer, open the 3rd control valve, move reciprocatingly between from an end margin of wafer to other end edge and spray chemical liquid, until complete the corrosion of wafer surface predetermined amount.
Preferably, in described step S02, when the length of the first spray equipment is consistent with the radius of described wafer, one end of described first spray equipment and the justified margin of described wafer, the other end aligns with the center of circle of described wafer; When the length of described first spray equipment is consistent with the diameter of described wafer, one end of described first spray equipment and one end justified margin of described wafer, the other end justified margin of the other end and described wafer.
Preferably, in described step S04, after spraying the chemical liquid of Preset Time above the second spray equipment wafer, adjust the flutter rate of described second spray equipment, move reciprocatingly between continuing from an end margin of wafer to other end edge and spray chemical liquid.
A kind of device and method improving etching uniformity provided by the invention, by arranging the first spray equipment, make the radius of its length and wafer or diameter consistent, when spraying chemical liquid, with the state of wafer High Rotation Speed, can at the instantaneous uniform fold chemical liquid of wafer surface, wafer surface is produced with chemical liquid everywhere simultaneously react, solve chemical liquid in prior art and play specking place corrosion rate higher than other problems everywhere of wafer, improve the uniformity of the corrosion of wafer, further, in etching process, also by adjusting the flutter rate of the second spray equipment, accurate control etching speed, the erosion uniformity of further raising wafer.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the device preferred embodiment improving etching uniformity in the present invention.
Number in the figure is described as follows:
10, chip carrier, 20, wafer, the 30, first spray arm, 40, the first spray equipment, 41, the first water influent pipeline, the 42, first control valve, 43, spray-hole, 44, the second control valve, 45, liquid level sensor, the 50, second spray arm, the 60, second spray equipment, 61, the second water influent pipeline, the 62, the 3rd control valve.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.Those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and the accompanying drawing semiconductor device with metal gate electrode that the present invention is proposed and manufacture method thereof be described in detail.Fig. 1 is the structural representation of the device preferred embodiment improving etching uniformity in the present invention.
Please refer to Fig. 1, a kind of device improving etching uniformity provided by the invention, comprise chip carrier 10, first spray arm 30 for bearing wafer 20 and the first spray equipment 40, chip carrier 10 can drive wafer 20 to rotate to presetting rotary speed, chip carrier 10 comprises fixed mechanism and rotating mechanism, wafer 10 is fixed on fixed mechanism, rotating mechanism drive fixed mechanism do high speed rotary motion, the first spray equipment 40 be arranged on can drive its rotate and/or lifting the first spray arm 30 on.
In the present embodiment, the length of the first spray equipment 40 is consistent with the radius of wafer 20 or diameter, its chemical liquid sprayed can at the instantaneous uniform fold of wafer surface, it has the hollow cavity for splendid attire chemical liquid, the liquid level sensor 45 for sensing chemical solution liquid level is provided with in hollow cavity, liquid level sensor 45 has display lamp, when chemical solution reaches default liquid level, triggers display lamp and lights.The upper surface of hollow cavity is communicated with the first water influent pipeline 41 being used for providing chemical liquid, first water influent pipeline 41 is provided with the first control valve 42 to control the circulation of chemical liquid, the lower surface of hollow cavity is provided with some equally distributed spray-holes 43 and the second control valve 44, second control valve 44 controls the keying of each spray-hole simultaneously, and the chemical liquid sprayed to make spray-hole 43 is cover wafers 20 surface simultaneously.
Concrete, the shape of the first spray equipment 40 includes but not limited to cuboid, segment or cylinder, and when the shape of the first spray equipment 40 is cuboid, the length of cuboid is consistent with the radius of wafer or diameter; When the shape of the first spray equipment 40 is segment, the length of side of segment is consistent with the radius of wafer; When the shape of the first spray equipment 40 is cylinder, cylindrical diameter is consistent with the diameter of wafer.
Simultaneously, the device improving etching uniformity also comprises the second spray arm 50 and the second spray equipment 60, second spray equipment 60 be arranged on can drive its rotate and/or lifting the second spray arm 50 on, second spray equipment 60 for the end margin at wafer 20 to moving reciprocatingly between other end edge and spraying chemical liquid, second spray equipment 60 is communicated with the second water influent pipeline 61 being used for providing chemical liquid, second water influent pipeline 61 has the 3rd control valve 62 controlling chemical liquid circulation, when use the second spray equipment 60, open the 3rd control valve 62, realize one side feed flow while spray.
In order to more accurately control etching speed, second spray arm 50 can be provided with velocity transducer and speed regulator (not shown), velocity transducer is for sensing the second spray equipment 60 flutter rate square on wafer 20, speed regulator is for adjusting the second spray equipment 60 flutter rate square on wafer 20, concrete flutter rate can be determined according to the actual requirements, do not limit at this, by adjusting the flutter rate of the second spray equipment 60, accurate control wafer 20 corrosion rate, improves the erosion uniformity of wafer further.
In addition, the present invention also provides a kind of method improving etching uniformity, comprises the following steps:
Step S01: provide wafer 20 to be cleaned and be carried on chip carrier 10, chip carrier 10 drives wafer 20 to rotate with default rotary speed.
Step S02: the first spray equipment 40 is rotated from home position (i.e. initial position) and is elevated the predeterminated position above wafer 20, the setting of this predeterminated position can ensure that chemical liquid that the first spray equipment 40 sprays can the radius of cover wafers or diameter range simultaneously, simultaneously, close the second control valve 44 of spray-hole 43, open the first control valve 42 of the first water influent pipeline 41, until the chemical liquid in hollow cavity reaches default liquid level, the display lamp triggering liquid level sensor 45 lights, and closes the first control valve 42 of the first water influent pipeline 41.
In this step, the predeterminated position square on wafer 20 to the first spray equipment 40 does further restriction, when the length of the first spray equipment 40 is consistent with the radius of wafer 20, one end of the first spray equipment 40 and the justified margin of wafer 20, the other end aligns with the center of circle of wafer 20; When the length of the first spray equipment 40 is consistent with the diameter of wafer 20, one end of the first spray equipment 40 and one end justified margin of wafer 20, the other end justified margin of the other end and wafer 20.
Step S03: the second control valve 44 opening spray-hole 43, the chemical liquid sprayed to make spray-hole 43 covers wafer 20 surface of rotation simultaneously.
Step S04: the first spray equipment 40 is rotated from predeterminated position and is elevated go back to home position, again the second spray equipment 60 rotated from home position and be elevated the predeterminated position above wafer 20, open the 3rd control valve 62, move reciprocatingly between from an end margin of wafer 20 to other end edge and spray chemical liquid, until complete the corrosion of wafer 20 surface programming amount.
In this step, after second spray equipment 60 just sprays the chemical liquid of Preset Time on wafer 20, first the flutter rate of the second spray equipment can be sensed by Negotiation speed transducer, again according to the actual requirements, Negotiation speed adjuster adjusts the flutter rate of the second spray equipment, move reciprocatingly and spray chemical liquid, accurately to control etching speed between continuing from an end margin of wafer 20 to other end edge.
In sum, a kind of device and method improving etching uniformity provided by the invention, by arranging the first spray equipment, make the radius of its length and wafer or diameter consistent, when spraying chemical liquid, with the state of wafer High Rotation Speed, can at the instantaneous uniform fold chemical liquid of wafer surface, wafer surface is produced with chemical liquid everywhere simultaneously react, solve chemical liquid in prior art and play specking place corrosion rate higher than other problems everywhere of wafer, improve the uniformity of the corrosion of wafer, further, in etching process, also by adjusting the flutter rate of the second spray equipment, accurate control etching speed, the erosion uniformity of further raising wafer.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.

Claims (10)

1. one kind is improved the device of etching uniformity, comprise the chip carrier for bearing wafer, described chip carrier can drive wafer to rotate to presetting rotary speed, it is characterized in that, also comprise the first spray arm and the first spray equipment, described first spray equipment be arranged on can drive its rotate and/or lifting the first spray arm on, wherein, the length of described first spray equipment is consistent with the radius of described wafer or diameter, can at the instantaneous uniform fold chemical liquid of wafer surface, it has the hollow cavity for splendid attire chemical liquid, the upper surface of described hollow cavity is communicated with the first water influent pipeline being used for providing chemical liquid, described first water influent pipeline is provided with the first control valve to control the circulation of chemical liquid, the lower surface of described hollow cavity is provided with some equally distributed spray-holes and the second control valve, described second control valve controls the keying of each spray-hole simultaneously, the chemical liquid sprayed to make described spray-hole covers described wafer surface simultaneously.
2. the device of raising etching uniformity according to claim 1, it is characterized in that, the shape of described first spray equipment is cuboid, segment or cylinder, when the shape of described first spray equipment is cuboid, the length of described cuboid is consistent with the radius of described wafer or diameter; When the shape of described first spray equipment is segment, the length of side of described segment is consistent with the radius of described wafer; When the shape of described first spray equipment is cylinder, described cylindrical diameter is consistent with the diameter of described wafer.
3. the device of raising etching uniformity according to claim 2, is characterized in that, is provided with the liquid level sensor for sensing chemical solution liquid level in the hollow cavity of described first spray equipment.
4. the device of raising etching uniformity according to claim 3, it is characterized in that, described liquid level sensor has display lamp, and when chemical solution reaches default liquid level, described display lamp lights.
5. according to the device of the arbitrary described raising etching uniformity of Claims 1 to 4, it is characterized in that, the device improving etching uniformity also comprises the second spray arm and the second spray equipment, described second spray equipment be arranged on it can be driven to rotate and/or lifting the second spray arm on, described second spray equipment is used for an end margin at wafer to moving reciprocatingly between other end edge and spraying chemical liquid.
6. the device of raising etching uniformity according to claim 5, it is characterized in that, described second spray equipment is communicated with the second water influent pipeline being used for providing chemical liquid, described second water influent pipeline has the 3rd control valve controlling chemical liquid circulation.
7. the device of raising etching uniformity according to claim 5, it is characterized in that, described second spray arm is provided with velocity transducer and speed regulator, described velocity transducer is for sensing the flutter rate of described second spray equipment above wafer, and described speed regulator is for adjusting the flutter rate of described second spray equipment above wafer.
8. improve a method for etching uniformity, it is characterized in that, comprise the following steps:
Step S01: wafer to be cleaned is provided and is carried on chip carrier, chip carrier drives wafer to rotate with default rotary speed;
Step S02: the first spray equipment is rotated from home position and is elevated the predeterminated position above wafer, with the radius or the diameter range that make the chemical liquid of described first spray equipment ejection can cover described wafer simultaneously, simultaneously, close the second control valve of spray-hole, open the first control valve of the first water influent pipeline, until the chemical liquid in hollow cavity reaches default liquid level;
Step S03: the second control valve opening spray-hole, the chemical liquid sprayed to make described spray-hole covers the wafer surface of rotation simultaneously;
Step S04: the first spray equipment is rotated from predeterminated position and is elevated go back to home position, again the second spray equipment rotated from home position and be elevated the predeterminated position above wafer, open the 3rd control valve, move reciprocatingly between from an end margin of wafer to other end edge and spray chemical liquid, until complete the corrosion of wafer surface predetermined amount.
9. the method for raising etching uniformity according to claim 8, it is characterized in that, in described step S02, when the length of the first spray equipment is consistent with the radius of described wafer, one end of described first spray equipment and the justified margin of described wafer, the other end aligns with the center of circle of described wafer; When the length of described first spray equipment is consistent with the diameter of described wafer, one end of described first spray equipment and one end justified margin of described wafer, the other end justified margin of the other end and described wafer.
10. the method for raising etching uniformity according to claim 8, it is characterized in that, in described step S04, after spraying the chemical liquid of Preset Time above second spray equipment wafer, adjust the flutter rate of described second spray equipment, move reciprocatingly between continuing from an end margin of wafer to other end edge and spray chemical liquid.
CN201610101512.6A 2016-02-24 2016-02-24 A kind of device and method improving etching uniformity Active CN105552007B (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109647551A (en) * 2018-12-26 2019-04-19 济南金域医学检验中心有限公司 A kind of experiment reagent is automatically replenished method, system, device and controller
CN110473818A (en) * 2019-09-25 2019-11-19 广东先导先进材料股份有限公司 A kind of chip automatic corrosion sprinkling equipment
CN111081585A (en) * 2018-10-18 2020-04-28 北京北方华创微电子装备有限公司 Spray device and cleaning equipment
CN112103220A (en) * 2020-11-09 2020-12-18 晶芯成(北京)科技有限公司 Monitoring device and monitoring method for wafer cleaning position
CN113471108A (en) * 2021-07-06 2021-10-01 华海清科股份有限公司 Vertical rotation processing apparatus of wafer based on marangoni effect

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CN101499412A (en) * 2008-01-31 2009-08-05 大日本网屏制造株式会社 Substrate treatment apparatus, and substrate treatment method
CN103928298A (en) * 2013-01-15 2014-07-16 大日本网屏制造株式会社 Substrate Processing Method And Substrate Processing Apparatus
CN205428885U (en) * 2016-02-24 2016-08-03 北京七星华创电子股份有限公司 Improve device that wafer corrodes homogeneity

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Publication number Priority date Publication date Assignee Title
JP3559228B2 (en) * 2000-08-07 2004-08-25 住友精密工業株式会社 Rotary substrate processing equipment
US20070298614A1 (en) * 2005-10-18 2007-12-27 Sumco Corporation Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer
CN101499412A (en) * 2008-01-31 2009-08-05 大日本网屏制造株式会社 Substrate treatment apparatus, and substrate treatment method
CN103928298A (en) * 2013-01-15 2014-07-16 大日本网屏制造株式会社 Substrate Processing Method And Substrate Processing Apparatus
CN205428885U (en) * 2016-02-24 2016-08-03 北京七星华创电子股份有限公司 Improve device that wafer corrodes homogeneity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081585A (en) * 2018-10-18 2020-04-28 北京北方华创微电子装备有限公司 Spray device and cleaning equipment
CN109647551A (en) * 2018-12-26 2019-04-19 济南金域医学检验中心有限公司 A kind of experiment reagent is automatically replenished method, system, device and controller
CN110473818A (en) * 2019-09-25 2019-11-19 广东先导先进材料股份有限公司 A kind of chip automatic corrosion sprinkling equipment
CN112103220A (en) * 2020-11-09 2020-12-18 晶芯成(北京)科技有限公司 Monitoring device and monitoring method for wafer cleaning position
CN113471108A (en) * 2021-07-06 2021-10-01 华海清科股份有限公司 Vertical rotation processing apparatus of wafer based on marangoni effect

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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District

Patentee after: North China Science and technology group Limited by Share Ltd.

Address before: 100016 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District

Patentee before: BEIJING SEVENSTAR ELECTRONICS Co.,Ltd.