CN105542459A - 一种高介电系数聚酰亚胺薄膜 - Google Patents
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Abstract
本发明公开了一种高介电系数聚酰亚胺薄膜及其制备方法。以二酸酐单体和二胺单体缩聚得到的聚酰亚胺为基体,并掺杂富勒烯,青金石粉和纳米蒙脱土,其中富勒烯在薄膜中的重量百分比为1-3%,青金石粉在薄膜中的重量百分比为0-3%,纳米蒙脱土在薄膜中的重量百分比为0-3%。本发明的聚酰亚胺薄膜介电常数在12-18之间,介电常数高,是优良的制作电容的材料,其机械强度和各项物理指标与普通聚酰亚胺薄膜相同,保持耐高温,高强度,稳定性高,具有优异曲挠性的特点,并且经久耐用,长时间保持高介电常数,制备方法简单,适合大规模化生产应用。
Description
技术领域
本发明涉及一种聚酰亚胺薄膜,特别涉及一种高介电系数聚酰亚胺薄膜及其制备方法。
背景技术
目前,随着电器的广泛使用,电容的使用量快速增长,电容中最重要的部件是介电绝缘层材料,需要高介电系数。聚酰亚胺是一类耐高温,高强度,稳定性高,具有优异曲挠性的高分子材料,常用作制备介电绝缘层与机体薄膜。但是,普通的聚酰亚胺薄膜介电系数不高,随着使用时间的延长,介电系数还会下降,造成电子器件性能不稳定,不能满足需求。
专利201410459609.5公开了一种高介电常数的聚酰亚胺复合材料及其制备方法。在常规制备聚酰亚胺的过程中引入石墨烯和纳米碳酸钡,介电常数虽然有了提高,但是,聚酰亚胺薄膜的机械性能降低,且该介电常数随着使用时间的增加而降低,使用寿命降低。专利201310226961.X公开了一种聚酰亚胺高介电复合材料及其制备方法,采用改性石墨烯和纳米碳酸钡,也存在聚酰亚胺薄膜的机械性能降低,介电常数随着使用时间的增加而降低的问题。目前,在提高聚酰亚胺介电常数的同时保持聚酰亚胺薄膜的机械性能及介电常数的维持时间,是急需解决的问题。
发明内容
本发明的目的在于提供一种高介电系数聚酰亚胺薄膜。提高介电常数的同时保持高其稳定性和机械性能。
一种高介电系数聚酰亚胺薄膜,以二酸酐单体和二胺单体缩聚得到的聚酰亚胺为基体,并掺杂富勒烯,青金石粉和纳米蒙脱土,其中富勒烯在薄膜中的重量百分比为1-3%,青金石粉在薄膜中的重量百分比为0-3%,纳米蒙脱土在薄膜中的重量百分比为0-3%。
所述介电系数聚酰亚胺薄膜中还包括稀土化合物。
所述稀土化合物为氧化镧,硫酸镧,氧化锆,氧化铈,钪金属粉,钇金属粉,镧金属粉中的一种或一种以上。
所述二胺单体为间苯二胺,4,4’-二氨基二苯醚,3,3’-二甲基联苯胺,2,5-二氨基甲苯,4,4’-二氨基二苯甲酮或2,4-二氨基-6-氯甲苯。
所述二酸酐单体为3,3’,4,4’-二苯酮四羧酸二酐,六氟二酐,均苯四甲酸二酐,3,3’,4,4’-联苯四羧酸二酐,2,2’,3,3’-联苯四羧酸二酐,1,4,5,8-萘四羧酸二酐,1,2,5,6-萘四羧酸二酐,菲-1,8,9,10-四羧酸二酐或苯-1,2,3,4-四羧酸二酐。
上述高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)将富勒烯,青金石粉和纳米蒙脱土分散在有机溶剂中,超声分散6-8小时,有机溶剂的加入量为上述物质总质量的2-15倍,制成分散液;
(2)在30-80℃条件下,将二胺单体和二酸酐单体加入上述分散液中,混合均匀,反应12-24小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在140-180℃环境下亚胺化3-8小时,得到高介电系数聚酰亚胺薄膜。
所述有机溶剂为N’N-二甲基乙酰胺,N’N-二甲基甲酰胺或N-甲基吡咯烷酮。
与现有技术相比,本发明具有如下有益效果:本发明的聚酰亚胺薄膜介电常数在12-18之间,介电常数高,是优良的制作电容的材料,其机械强度和各项物理指标与普通聚酰亚胺薄膜相同,保持耐高温,高强度,稳定性高,具有优异曲挠性的特点,并且经久耐用,长时间保持高介电常数,制备方法简单,适合大规模化生产应用。
具体实施方式
下面对本发明的具体实施方式进行详细描述,但应当理解本发明的保护范围并不受具体实施方式的限制。
实施例1
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将1份富勒烯,1份青金石粉和2份纳米蒙脱土分散在50份N’N-二甲基乙酰胺中,超声分散7小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的3,3’-二甲基联苯胺和1,2,5,6-萘四羧酸二酐共30份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在150℃环境下亚胺化6小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为16.8。
实施例2
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将2份富勒烯,1份青金石粉和1份纳米蒙脱土分散在50份N’N-二甲基乙酰胺中,超声分散6小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共35份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在180℃环境下亚胺化7小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为17.2。
实施例3
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将2份富勒烯,2份纳米蒙脱土分散在50份N’N-二甲基甲酰胺中,超声分散6小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共28份加入上述分散液中,混合均匀,反应15小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在160℃环境下亚胺化5小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为15.2。
实施例4
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将1份富勒烯,1份青金石粉分散在50份N’N-二甲基甲酰胺中,超声分散6小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共28份加入上述分散液中,混合均匀,反应15小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在160℃环境下亚胺化5小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为16.2。
实施例5
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将2份富勒烯,1份青金石粉,1份氧化锆分散在50份N’N-二甲基甲酰胺中,超声分散6小时,制成分散液;
(2)将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共29份加入上述分散液中,混合均匀,反应15小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在160℃环境下亚胺化5小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为17.2。
实施例6
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将2份富勒烯,1份青金石粉,1份氧化铈和1份纳米蒙脱土分散在50份N’N-二甲基乙酰胺中,超声分散6小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共35份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在180℃环境下亚胺化7小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为18.0。
实施例7
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将2份富勒烯,1份青金石粉,1份钇金属粉和1份纳米蒙脱土分散在50份N-甲基吡咯烷酮中,超声分散6小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的间苯二胺和3,3’,4,4’-二苯酮四羧酸二酐共35份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在180℃环境下亚胺化7小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为17.8。
对比例1
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)按照重量份数将1份富勒烯,分散在50份N’N-二甲基乙酰胺中,超声分散7小时,制成分散液;
(2)在30-80℃条件下,将等摩尔量的3,3’-二甲基联苯胺和1,2,5,6-萘四羧酸二酐共30份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在150℃环境下亚胺化6小时,得到高介电系数聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为11.1。
对比例2
一种高介电系数聚酰亚胺薄膜的制备方法,按照如下步骤进行:
(1)在30-80℃条件下,将等摩尔量的3,3’-二甲基联苯胺和1,2,5,6-萘四羧酸二酐共30份加入上述分散液中,混合均匀,反应18小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在150℃环境下亚胺化6小时,得到聚酰亚胺薄膜。
上述制备的聚酰亚胺薄膜利用宽频介电阻抗仪测试样品的介电性能,在测试频率103Hz条件下,介电常数为3.1。
以上公开的仅为本发明的几个具体实施例,但是,本发明并非局限于此,任何本领域的技术人员能思之的变化都应落入本发明的保护范围。
Claims (7)
1.一种高介电系数聚酰亚胺薄膜,其特征在于,以二酸酐单体和二胺单体缩聚得到的聚酰亚胺为基体,并掺杂富勒烯,青金石粉和纳米蒙脱土,其中富勒烯在薄膜中的重量百分比为1-3%,青金石粉在薄膜中的重量百分比为0-3%,纳米蒙脱土在薄膜中的重量百分比为0-3%。
2.根据权利要求1所述的高介电系数聚酰亚胺薄膜,其特征在于,所述介电系数聚酰亚胺薄膜中还包括稀土化合物。
3.根据权利要求2所述的高介电系数聚酰亚胺薄膜,其特征在于,所述稀土化合物为氧化镧,硫酸镧,氧化锆,氧化铈,钪金属粉,钇金属粉,镧金属粉中的一种或一种以上。
4.根据权利要求1所述的高介电系数聚酰亚胺薄膜,其特征在于,所述二胺单体为间苯二胺,4,4’-二氨基二苯醚,3,3’-二甲基联苯胺,2,5-二氨基甲苯,4,4’-二氨基二苯甲酮或2,4-二氨基-6-氯甲苯。
5.根据权利要求1所述的高介电系数聚酰亚胺薄膜,其特征在于,所述二酸酐单体为3,3’,4,4’-二苯酮四羧酸二酐,六氟二酐,均苯四甲酸二酐,3,3’,4,4’-联苯四羧酸二酐,2,2’,3,3’-联苯四羧酸二酐,1,4,5,8-萘四羧酸二酐,1,2,5,6-萘四羧酸二酐,菲-1,8,9,10-四羧酸二酐或苯-1,2,3,4-四羧酸二酐。
6.权利要求1所述高介电系数聚酰亚胺薄膜的制备方法,其特征在于,按照如下步骤进行:
(1)将富勒烯,青金石粉和纳米蒙脱土分散在有机溶剂中,超声分散6-8小时,有机溶剂的加入量为上述物质总质量的2-15倍,制成分散液;
(2)在30-80℃条件下,将二胺单体和二酸酐单体加入上述分散液中,混合均匀,反应12-24小时,制成浆料;
(3)将上述浆料在光滑板材表面涂出厚度均匀的薄膜,待溶剂挥发殆尽,在140-180℃环境下亚胺化3-8小时,得到高介电系数聚酰亚胺薄膜。
7.权利要求6所述高介电系数聚酰亚胺薄膜的制备方法,其特征在于,所述有机溶剂为N,N-二甲基乙酰胺,N,N-二甲基甲酰胺或N-甲基吡咯烷酮。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106433128A (zh) * | 2016-10-11 | 2017-02-22 | 陕西科技大学 | 一种含有镧系元素材料的纳米聚酯亚胺薄膜及其制备方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070215957A1 (en) * | 2006-03-17 | 2007-09-20 | Fang-Chung Chen | Gate dielectric structure and an organic thin film transistor based thereon |
CN102079945A (zh) * | 2009-11-26 | 2011-06-01 | 福保化学股份有限公司 | 一种具可挠性与耐磨耗性的耐突波绝缘涂料 |
CN103147226A (zh) * | 2013-02-07 | 2013-06-12 | 江西师范大学 | 一种制备聚合物基高介电纳米复合材料的方法 |
CN104211962A (zh) * | 2014-09-10 | 2014-12-17 | 北京化工大学常州先进材料研究院 | 一种高介电聚酰亚胺复合材料及其制备方法 |
-
2016
- 2016-02-24 CN CN201610102869.6A patent/CN105542459B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070215957A1 (en) * | 2006-03-17 | 2007-09-20 | Fang-Chung Chen | Gate dielectric structure and an organic thin film transistor based thereon |
CN102079945A (zh) * | 2009-11-26 | 2011-06-01 | 福保化学股份有限公司 | 一种具可挠性与耐磨耗性的耐突波绝缘涂料 |
CN103147226A (zh) * | 2013-02-07 | 2013-06-12 | 江西师范大学 | 一种制备聚合物基高介电纳米复合材料的方法 |
CN104211962A (zh) * | 2014-09-10 | 2014-12-17 | 北京化工大学常州先进材料研究院 | 一种高介电聚酰亚胺复合材料及其制备方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106433128A (zh) * | 2016-10-11 | 2017-02-22 | 陕西科技大学 | 一种含有镧系元素材料的纳米聚酯亚胺薄膜及其制备方法 |
CN106633124A (zh) * | 2016-10-11 | 2017-05-10 | 陕西科技大学 | 一种含有镧系元素材料的纳米聚酰胺酰亚胺薄膜及其制备方法 |
CN108976793A (zh) * | 2018-08-07 | 2018-12-11 | 江苏亚宝绝缘材料股份有限公司 | 一种预警微裂纹的透明聚酰亚胺薄膜及其制备方法 |
WO2020029392A1 (zh) * | 2018-08-07 | 2020-02-13 | 江苏亚宝绝缘材料股份有限公司 | 一种预警微裂纹的透明聚酰亚胺薄膜及其制备方法 |
CN110734643A (zh) * | 2018-10-29 | 2020-01-31 | 嘉兴学院 | 一种稀土掺杂改性的聚酰亚胺薄膜的制备方法 |
CN110734643B (zh) * | 2018-10-29 | 2022-03-25 | 嘉兴学院 | 一种稀土掺杂改性的聚酰亚胺薄膜的制备方法 |
CN112876846A (zh) * | 2020-12-30 | 2021-06-01 | 北京市理化分析测试中心 | 一种含有纳米富勒烯的聚合物薄膜制备方法 |
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CN114956068B (zh) * | 2022-06-23 | 2023-09-08 | 中天电子材料有限公司 | 一种人工石墨导热膜及其制备方法 |
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