CN105529185A - Novel manufacturing method for capacitor with insulated edges - Google Patents

Abstract

The invention provides a novel manufacturing method for a capacitor with insulated edges, which solves problems that capacitors manufactured by a photo-etching method in prior art have large difference of capacitance values and low appearance qualification rate. The novel manufacturing method for the capacitor with the insulated edges is suitable for a substrate including an insulated layer and is characterized by comprising the steps: (1), before electrodes are manufactured on the substrate, calculating the inter-electrode size of a capacitor according to a capacitance formula; (2), cutting the insulated layer by utilizing a dicing saw; (3), cutting the cut insulated layer along the center of an insulated edge by utilizing a blade with the thickness of 0.03mm to form a single capacitor, thereby obtaining the capacitor with the insulated edges. According to the novel manufacturing method for the capacitor with the insulated edges, which is provided by the invention, by utilizing the cutting method, the accuracy of the size of the capacitor is achieved, and the cut lines are clear and remarkable and have good straightness; the insulated edges do not have metal residues and can completely achieve an insulation function; the capacitance value and the appearance qualification rate are increased.

Description

A kind of New insulated limit capacitor manufacturing method

Technical field

The present invention relates to capacitor technology field, refer to a kind of New insulated limit capacitor manufacturing method especially.

Background technology

Ceramic substrate is passing through cleaning, sputter laggard enter photo-mask process, even glue is made according to technique at photo-mask process, exposure, the technological processes such as development, present the figure of made capacitor size size, electrode film layer is thickeied through plating, arrive photoetching etching liquid again and etch exhausted Rim portion, graphic making completes, carry out cutting and separating again and become single capacitor, but current photoetching process is prepared capacitor and be there is more problem: when 1) photoetching process preparation is containing insulation limit capacitor, when electrode size is fixed with ceramic substrate dielectric constant instability, the qualification rate of capacitance is low, the adjustment between electrode size and dielectric constant cannot be realized, 2) photoetching process prepare capacitor insulation limit time, because of the angularity of ceramic substrate surface, ceramic crystal granularity, density affects etch period cannot be accurate, the difference of reaction rate, there is kish on evenness and the insulation limit that directly can have influence on capacitor edge, cause the difference of capacitance and appearance yield poor, 3) photoetching process prepare capacitor insulation limit time, ceramic substrate soaks etching in etching liquid, has certain corrosivity to porcelain body, and electrode layer adhesive force has impact, and bonding force is at 5g ± 1g.

Summary of the invention

The present invention proposes a kind of New insulated limit capacitor manufacturing method, solves the problem that difference is large, appearance yield is poor of capacitor electrode capacitance prepared by photoetching process in prior art.

Technical scheme of the present invention is achieved in that a kind of New insulated limit capacitor manufacturing method, and be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:

1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;

2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;

3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.

As preferred technical scheme, step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.

The present invention compares produced beneficial effect with background technology:

1) realize the accuracy of capacitor sizes, cut svelteness, obvious, linearity is good; Insulation limit is without metal residual, and can reach the effect of insulation completely, capacitance, appearance yield are significantly improved;

2) photoetching making is containing insulation limit type capacitor complex steps, also need cutting, and cutting makes containing insulation limit capacitor, only needs cutting can reach target call after etching;

3) compare the capacitor containing insulation limit prepared by photoetching method, ceramic substrate soaks without etching liquid, and the adhesive force of metal level is not subject to chemical solution and soaks, and bonding force is at more than 10g;

4) save photoetching material therefor cost, as photoresist, developer solution, etching liquid, mask plate etc., also just decrease the pollution of discard solution discharge to environment simultaneously;

5) can require to make according to user different from insulation limit capacitor figure, as rectangle, matrix pattern, array type etc.

Accompanying drawing explanation

In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Fig. 1 is the process flow diagram of manufacture method of the present invention.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.

As shown in Figure 1, a kind of New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:

1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;

2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;

3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.

As preferred technical scheme, step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.

Concrete manufacture method

A kind of New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:

1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size, and in reality, ε is the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method;

2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;

3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.

The present invention, owing to have employed cutting mode preparation insulation limit capacitor, realizes the accuracy of capacitor sizes, cuts svelteness, obvious, linearity is good; Insulation limit is without metal residual, and can reach the effect of insulation completely, capacitance, appearance yield are significantly improved.

The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (2)

1. a New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, it is characterized in that, the method comprising the steps of:

1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;

2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;

3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.

2. a kind of New insulated limit as described in claim 1 capacitor manufacturing method, is characterized in that:

Step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.