CN105529185A - Novel manufacturing method for capacitor with insulated edges - Google Patents
Novel manufacturing method for capacitor with insulated edges Download PDFInfo
- Publication number
- CN105529185A CN105529185A CN201610093743.7A CN201610093743A CN105529185A CN 105529185 A CN105529185 A CN 105529185A CN 201610093743 A CN201610093743 A CN 201610093743A CN 105529185 A CN105529185 A CN 105529185A
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- CN
- China
- Prior art keywords
- capacitor
- insulated
- edges
- limit
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000012467 final product Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides a novel manufacturing method for a capacitor with insulated edges, which solves problems that capacitors manufactured by a photo-etching method in prior art have large difference of capacitance values and low appearance qualification rate. The novel manufacturing method for the capacitor with the insulated edges is suitable for a substrate including an insulated layer and is characterized by comprising the steps: (1), before electrodes are manufactured on the substrate, calculating the inter-electrode size of a capacitor according to a capacitance formula; (2), cutting the insulated layer by utilizing a dicing saw; (3), cutting the cut insulated layer along the center of an insulated edge by utilizing a blade with the thickness of 0.03mm to form a single capacitor, thereby obtaining the capacitor with the insulated edges. According to the novel manufacturing method for the capacitor with the insulated edges, which is provided by the invention, by utilizing the cutting method, the accuracy of the size of the capacitor is achieved, and the cut lines are clear and remarkable and have good straightness; the insulated edges do not have metal residues and can completely achieve an insulation function; the capacitance value and the appearance qualification rate are increased.
Description
Technical field
The present invention relates to capacitor technology field, refer to a kind of New insulated limit capacitor manufacturing method especially.
Background technology
Ceramic substrate is passing through cleaning, sputter laggard enter photo-mask process, even glue is made according to technique at photo-mask process, exposure, the technological processes such as development, present the figure of made capacitor size size, electrode film layer is thickeied through plating, arrive photoetching etching liquid again and etch exhausted Rim portion, graphic making completes, carry out cutting and separating again and become single capacitor, but current photoetching process is prepared capacitor and be there is more problem: when 1) photoetching process preparation is containing insulation limit capacitor, when electrode size is fixed with ceramic substrate dielectric constant instability, the qualification rate of capacitance is low, the adjustment between electrode size and dielectric constant cannot be realized, 2) photoetching process prepare capacitor insulation limit time, because of the angularity of ceramic substrate surface, ceramic crystal granularity, density affects etch period cannot be accurate, the difference of reaction rate, there is kish on evenness and the insulation limit that directly can have influence on capacitor edge, cause the difference of capacitance and appearance yield poor, 3) photoetching process prepare capacitor insulation limit time, ceramic substrate soaks etching in etching liquid, has certain corrosivity to porcelain body, and electrode layer adhesive force has impact, and bonding force is at 5g ± 1g.
Summary of the invention
The present invention proposes a kind of New insulated limit capacitor manufacturing method, solves the problem that difference is large, appearance yield is poor of capacitor electrode capacitance prepared by photoetching process in prior art.
Technical scheme of the present invention is achieved in that a kind of New insulated limit capacitor manufacturing method, and be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:
1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;
2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;
3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.
As preferred technical scheme, step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.
The present invention compares produced beneficial effect with background technology:
1) realize the accuracy of capacitor sizes, cut svelteness, obvious, linearity is good; Insulation limit is without metal residual, and can reach the effect of insulation completely, capacitance, appearance yield are significantly improved;
2) photoetching making is containing insulation limit type capacitor complex steps, also need cutting, and cutting makes containing insulation limit capacitor, only needs cutting can reach target call after etching;
3) compare the capacitor containing insulation limit prepared by photoetching method, ceramic substrate soaks without etching liquid, and the adhesive force of metal level is not subject to chemical solution and soaks, and bonding force is at more than 10g;
4) save photoetching material therefor cost, as photoresist, developer solution, etching liquid, mask plate etc., also just decrease the pollution of discard solution discharge to environment simultaneously;
5) can require to make according to user different from insulation limit capacitor figure, as rectangle, matrix pattern, array type etc.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the process flow diagram of manufacture method of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, a kind of New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:
1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;
2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;
3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.
As preferred technical scheme, step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.
Concrete manufacture method
A kind of New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, the method comprising the steps of:
1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size, and in reality, ε is the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method;
2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;
3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.
The present invention, owing to have employed cutting mode preparation insulation limit capacitor, realizes the accuracy of capacitor sizes, cuts svelteness, obvious, linearity is good; Insulation limit is without metal residual, and can reach the effect of insulation completely, capacitance, appearance yield are significantly improved.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. a New insulated limit capacitor manufacturing method, be applicable to one containing on the substrate of insulating barrier, it is characterized in that, the method comprising the steps of:
1) before described substrate makes electrode, the size of capacitor electrode interpolar is calculated according to capacitance equation C=ε SK/d, in formula, C is electric capacity, ε be do not establish insulating barrier capacitor plate between the dielectric constant of medium, K is electrostatic force constant, S is that the right opposite between capacitor plate amasss, and d is interelectrode size;
2) cut described insulating barrier place with scribing machine, depth of cut is 10 μm, and the blade thickness that described cutting machine uses is 0.15mm;
3) become single capacitor with the blade of 0.03mm thickness along insulation limit heartcut again, to obtain final product.
2. a kind of New insulated limit as described in claim 1 capacitor manufacturing method, is characterized in that:
Step 1) in ε be the dielectric constant not calculating ceramic substrate reality containing insulation limit capacitor cutting production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610093743.7A CN105529185A (en) | 2016-02-22 | 2016-02-22 | Novel manufacturing method for capacitor with insulated edges |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610093743.7A CN105529185A (en) | 2016-02-22 | 2016-02-22 | Novel manufacturing method for capacitor with insulated edges |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105529185A true CN105529185A (en) | 2016-04-27 |
Family
ID=55771341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610093743.7A Pending CN105529185A (en) | 2016-02-22 | 2016-02-22 | Novel manufacturing method for capacitor with insulated edges |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105529185A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098369A (en) * | 2016-06-02 | 2016-11-09 | 中国振华集团云科电子有限公司 | A kind of processing method on ceramic capacitor insulation limit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486508A (en) * | 1987-09-29 | 1989-03-31 | Toshiba Corp | Manufacture of chip capacitor |
| JPH10125565A (en) * | 1996-10-18 | 1998-05-15 | Taiyo Yuden Co Ltd | Method/device for cutting/dividing ceramic stacked body |
| CN202013811U (en) * | 2010-11-03 | 2011-10-19 | 上海祯显电子科技有限公司 | Precision matrix flat capacitor |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
-
2016
- 2016-02-22 CN CN201610093743.7A patent/CN105529185A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486508A (en) * | 1987-09-29 | 1989-03-31 | Toshiba Corp | Manufacture of chip capacitor |
| JPH10125565A (en) * | 1996-10-18 | 1998-05-15 | Taiyo Yuden Co Ltd | Method/device for cutting/dividing ceramic stacked body |
| CN202013811U (en) * | 2010-11-03 | 2011-10-19 | 上海祯显电子科技有限公司 | Precision matrix flat capacitor |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098369A (en) * | 2016-06-02 | 2016-11-09 | 中国振华集团云科电子有限公司 | A kind of processing method on ceramic capacitor insulation limit |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20160427 |