CN106098369A - A kind of processing method on ceramic capacitor insulation limit - Google Patents
A kind of processing method on ceramic capacitor insulation limit Download PDFInfo
- Publication number
- CN106098369A CN106098369A CN201610383934.7A CN201610383934A CN106098369A CN 106098369 A CN106098369 A CN 106098369A CN 201610383934 A CN201610383934 A CN 201610383934A CN 106098369 A CN106098369 A CN 106098369A
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- Prior art keywords
- dielectric constant
- insulation limit
- processing method
- capacitor
- limit
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- 238000009413 insulation Methods 0.000 title claims abstract description 36
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 15
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 229910052573 porcelain Inorganic materials 0.000 description 7
- 238000012797 qualification Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
Abstract
The invention discloses the processing method on a kind of ceramic capacitor insulation limit, comprise the following steps: step 1, calculate the actual dielectric constant of ceramic substrate, then calculate electrode size by actual dielectric constant, it is achieved the regulation of capacitance；Step 2, carries out the cutting on insulation limit with the first blade, and depth of cut will be under the metal layers；Step 3, becomes simple grain capacitor with the second blade along insulation limit heartcut, ceramic capacitor insulation limit svelteness that this processing method obtains, substantially, linearity good；And insulate limit noresidue metal, the effect of insulation can be reached；Improve production efficiency, reduce cost, the minimizing pollution to environment.
Description
Technical field
The invention belongs to electronic devices and components and make field, be specifically related to the processing method on a kind of ceramic capacitor insulation limit.
Background technology
Prior art many employings photoetching making insulation limit type product, as it is shown in figure 1, photoetching process preparation is containing insulation limit product
Time, in the case of electrode size is fixing and ceramic substrate dielectric constant is constant, according to plate condenser computing formula C=ε S/
D, the capacitance of product is fixing, it is impossible to realize regulation；
And product insulation limit out-of-flatness prepared by photoetching process, because etch period precisely cannot directly influence whether control
The flatness of product edge；And there is the gold grain of residual on limit of insulating, because ceramic substrate surface is uneven, react during etching
Speed is different, and the sunk position of ceramic substrate has metal residual；
So the shortcoming that prior art lithographic makes insulation limit type product is that ceramic substrate soaks in different etching liquids
Bubble, has certain corrosivity to porcelain body, and electrode layer soaks in etching liquid and can have an impact adhesive force, and bonding force is at 5g ± 1g；
When electrode size is fixing and ceramic substrate dielectric constant changes, capacitance qualification rate is unstable, between 5%～55%, outward
Sight qualification rate is relatively low, about 40%, and the cost such as the material used by photoetching such as photoresist, developer solution, etching liquid, mask plate
Too high, environment is caused certain pollution by the discard solution discharge that this material produces.
Summary of the invention
Goal of the invention: the problem existed for prior art, the present invention provides the process on a kind of ceramic capacitor insulation limit
Method, the method cuts svelteness, obvious, linearity is good and the limit noresidue metal that insulate.
Technical scheme: the processing method on a kind of ceramic capacitor insulation limit, comprises the following steps:
Step 1, calculates the actual dielectric constant of ceramic substrate, then calculates electrode size by actual dielectric constant, real
The regulation of existing capacitance；
Step 2, carries out the cutting on insulation limit with the first blade, and depth of cut will be under the metal layers；
Step 3, becomes simple grain capacitor with the second blade along insulation limit heartcut.
Specifically, in described step 1 the actual dielectric constant of ceramic substrate and dielectric constant calculate electrode size according to
Capacitance equation C=ε S K/d calculates, and in formula, C is electric capacity, and ε is that between the capacitor plate not setting insulating barrier, the dielectric of medium is normal
Number, K is electrostatic force constant, and S is that the right opposite between capacitor plate amasss, and d is interelectrode size.
Specifically, the regulation realizing capacitance in described step 1 regulates manufactured size according to actual dielectric constant, reaches
Target capacitance.
Specifically, in described step 2, the thickness of the first blade is 0.15 μm.
Specifically, in described step 3, the thickness of the second blade is 0.03 μm.
Specifically, described step 1 calculates ceramic substrate according to universal monolayer sheets type ceramic dielectric capacitor production method
Actual dielectric constant.
Beneficial effect: compared with prior art, it is an advantage of the current invention that:
1, the method cuts svelteness, obvious, linearity is good, and operating procedure is simple, low cost；
2, the method realizes capacitance scalable；
3, cutting insulation limit noresidue metal, is fully achieved the effect of insulation；
4, can require to make different electrode patterns according to difference, such as: rectangle, matrix pattern, array type etc.；
5, shorten fabrication cycle, improve production efficiency；
6, reduce the discharge of the waste liquids such as etching liquid, reduce environmental pollution；
Accompanying drawing explanation
Fig. 1 is that prior art lithographic makes insulation limit type product schematic diagram；
Fig. 2 is that the present invention cuts making insulation limit product schematic diagram.
Detailed description of the invention
Below in conjunction with the accompanying drawings and detailed description of the invention, it is further elucidated with the present invention.
The processing method on a kind of ceramic capacitor insulation limit, comprises the following steps, step 1, according to universal monolayer chip
Ceramic capacitor production method calculates the actual dielectric constant of ceramic substrate, then calculates electrode chi by actual dielectric constant
Very little, calculate the size between electrode for capacitors according to capacitance equation C=ε S K/d, in formula, C is electric capacity, and ε is not for set insulating barrier
Capacitor plate between the dielectric constant of medium, K is electrostatic force constant, and S is that the right opposite between capacitor plate amasss, and d is between electrode
Size；Regulate manufactured size according to actual dielectric constant, reach target capacitance, it is achieved the regulation of capacitance；
The making of above-mentioned universal monolayer sheets type ceramic dielectric capacitor, as requested size, target capacitance, cutting is without insulation
The general-purpose capacitor on limit；
Step 2, with the first blade that thickness is 0.15 μm carry out insulate limit cutting, depth of cut will under the metal layers,
This metal level is the electrode layer in porcelain Jie's ceramic plane, and the injury to porcelain body minimizes (≤10 μm)；
Step 3, becomes simple grain capacitor, simple grain capacitor with the second blade that thickness is 0.03 μm along insulation limit heartcut
Leaded Ceramic Disc Capacitor size as requested, the target capacitance of bulk is referred to be fabricated to single electric capacity.
Use the present invention processing method can save photoetching material therefor cost, as photoresist, developer solution, etching liquid,
Mask plates etc., the most just decrease the discard solution discharge pollution to environment simultaneously；
Photoetching making, containing insulation limit type product complex steps, also needs to cutting, and cuts making limit containing insulation and produce after etching
Product, it is only necessary to cutting i.e. can reach target call；
Comparing the product containing insulation limit prepared by photoetching method, ceramic substrate soaks without etching liquid, the attachment of layer gold
Power is not affected, and product bonding force is unaffected, effective.
Before experiment, there is problems in that
First, photoetching monolayer sheets type ceramic dielectric capacitor size is fixed, big in substrate dielectric constant instability or accuracy error
Time, qualification rate is low.
Second, photoetching monolayer sheets type ceramic dielectric capacitor lines precision, when there is concavo-convex cavity on substrate surface flat degree and surface,
The lines of etching have zigzag.
3rd, photoetching monolayer sheets type ceramic dielectric capacitor etched portions has the gold grain of residual, causes product surface outward appearance
Unintelligible.
Our experiments show that
During capacitor insulation limit prepared by photoetching process, porcelain Jie's pottery soaks etching in etching liquid, has porcelain body certain
Corrosivity, electrode layer adhesive force can have an impact, and bonding force is at 5g ± 1g；Capacitor prepared by cutting insulation limit method, porcelain is situated between and makes pottery
Porcelain soaks without etching liquid, and the adhesive force of metal level is not soaked by chemical solution, and bonding force is at more than 10g；
As in figure 2 it is shown, capacitance qualification rate is from bringing up to more than 65% between 5%～55%, appearance yield is from 40%
Left and right brings up to more than 60%, has saved the cost of ceramic substrate.
Claims (6)
1. the processing method on a ceramic capacitor insulation limit, it is characterised in that comprise the following steps:
Step 1, calculates the actual dielectric constant of ceramic substrate, then calculates electrode size by actual dielectric constant, it is achieved electricity
The regulation of capacity；
Step 2, carries out the cutting on insulation limit with the first blade, and depth of cut will be under the metal layers；
Step 3, becomes simple grain capacitor with the second blade along insulation limit heartcut.
The processing method on a kind of ceramic capacitor the most according to claim 1 insulation limit, it is characterised in that: described step 1
The actual dielectric constant of middle ceramic substrate and dielectric constant calculate electrode size and calculate according to capacitance equation C=ε S K/d,
In formula, C is electric capacity, and ε is the dielectric constant of medium between the capacitor plate not setting insulating barrier, and K is electrostatic force constant, and S is capacitance pole
Right opposite between plate amasss, and d is interelectrode size.
The processing method on a kind of ceramic capacitor the most according to claim 1 insulation limit, it is characterised in that: described step 1
The middle regulation realizing capacitance regulates manufactured size according to actual dielectric constant, reaches target capacitance.
The processing method on a kind of ceramic capacitor the most according to claim 1 insulation limit, it is characterised in that: described step 2
In the thickness of the first blade be 0.15 μm.
The processing method on a kind of ceramic capacitor the most according to claim 1 insulation limit, it is characterised in that: described step 3
In the thickness of the second blade be 0.03 μm.
The processing method on a kind of ceramic capacitor the most according to claim 1 insulation limit, it is characterised in that: described step 1
The middle actual dielectric constant calculating ceramic substrate according to universal monolayer sheets type ceramic dielectric capacitor production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610383934.7A CN106098369A (en) | 2016-06-02 | 2016-06-02 | A kind of processing method on ceramic capacitor insulation limit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610383934.7A CN106098369A (en) | 2016-06-02 | 2016-06-02 | A kind of processing method on ceramic capacitor insulation limit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106098369A true CN106098369A (en) | 2016-11-09 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610383934.7A Pending CN106098369A (en) | 2016-06-02 | 2016-06-02 | A kind of processing method on ceramic capacitor insulation limit |
Country Status (1)
| Country | Link |
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| CN (1) | CN106098369A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228140A (en) * | 2019-06-27 | 2019-09-13 | 大连达利凯普科技有限公司 | A kind of cutting method of single layer chip boundary ceramics capacitor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486508A (en) * | 1987-09-29 | 1989-03-31 | Toshiba Corp | Manufacture of chip capacitor |
| JPH10125565A (en) * | 1996-10-18 | 1998-05-15 | Taiyo Yuden Co Ltd | Method/device for cutting/dividing ceramic stacked body |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
| CN105529185A (en) * | 2016-02-22 | 2016-04-27 | 中国振华集团云科电子有限公司 | Novel manufacturing method for capacitor with insulated edges |
-
2016
- 2016-06-02 CN CN201610383934.7A patent/CN106098369A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486508A (en) * | 1987-09-29 | 1989-03-31 | Toshiba Corp | Manufacture of chip capacitor |
| JPH10125565A (en) * | 1996-10-18 | 1998-05-15 | Taiyo Yuden Co Ltd | Method/device for cutting/dividing ceramic stacked body |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
| CN105529185A (en) * | 2016-02-22 | 2016-04-27 | 中国振华集团云科电子有限公司 | Novel manufacturing method for capacitor with insulated edges |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228140A (en) * | 2019-06-27 | 2019-09-13 | 大连达利凯普科技有限公司 | A kind of cutting method of single layer chip boundary ceramics capacitor |
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Application publication date: 20161109 |