CN105518800A - 半导体存储器装置及其ecc方法 - Google Patents

半导体存储器装置及其ecc方法 Download PDF

Info

Publication number
CN105518800A
CN105518800A CN201380077420.3A CN201380077420A CN105518800A CN 105518800 A CN105518800 A CN 105518800A CN 201380077420 A CN201380077420 A CN 201380077420A CN 105518800 A CN105518800 A CN 105518800A
Authority
CN
China
Prior art keywords
error correction
data
nonvolatile memory
write data
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201380077420.3A
Other languages
English (en)
Other versions
CN105518800B (zh
Inventor
金甫根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN105518800A publication Critical patent/CN105518800A/zh
Application granted granted Critical
Publication of CN105518800B publication Critical patent/CN105518800B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

提供了一种半导体存储器装置及其ECC方法，所述半导体存储器装置包括：第一非易失性存储器；第二非易失性存储器，具有与第一非易失性存储器的类型不同的类型；控制器；第一纠错电路，被构造成纠正在第一非易失性存储器进行编程的第一写数据的错误；和第二纠错电路，包括在控制器中并被构造成基于与第一纠错电路的纠错算法不同的纠错算法纠正第一写数据的错误或在第二非易失性存储器进行编程的第二写数据的错误。根据第一写数据的属性使用第一纠错电路和第二纠错电路中的一个产生用于纠正第一写数据的错误的纠错数据。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201380077420.3A 2013-06-14 2013-06-14 半导体存储器装置及其ecc方法 Active CN105518800B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2013/054868 WO2014199199A1 (zh) 2013-06-14 2013-06-14 半导体存储器装置及其ecc方法

Publications (2)

Publication Number Publication Date
CN105518800A true CN105518800A (zh) 2016-04-20
CN105518800B CN105518800B (zh) 2018-11-30

Family

ID=52021708

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380077420.3A Active CN105518800B (zh) 2013-06-14 2013-06-14 半导体存储器装置及其ecc方法

Country Status (3)

Country Link
US (1) US20160132388A1 (zh)
CN (1) CN105518800B (zh)
WO (1) WO2014199199A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110069357A (zh) * 2018-01-22 2019-07-30 三星电子株式会社 集成电路存储器装置及其操作方法
CN116431382A (zh) * 2023-06-12 2023-07-14 深圳大普微电子科技有限公司 纠错单元管理方法、存储控制芯片及闪存设备

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015135156A1 (zh) * 2014-03-12 2015-09-17 中国科学院微电子研究所 一种对磁多畴态进行调控的方法
US10897273B2 (en) 2018-06-27 2021-01-19 Western Digital Technologies, Inc. System-level error correction coding allocation based on device population data integrity sharing
US10802908B2 (en) * 2018-07-31 2020-10-13 Western Digital Technologies, Inc. Data dependent allocation of error correction resources
KR20200034420A (ko) * 2018-09-21 2020-03-31 삼성전자주식회사 복수의 에러 정정 기능을 갖는 메모리 장치 및 메모리 시스템과 그 동작 방법
KR20200100309A (ko) * 2019-02-18 2020-08-26 삼성전자주식회사 메모리 장치 및 시스템
US20220300374A1 (en) * 2021-03-17 2022-09-22 Micron Technology, Inc. Redundant array management techniques
US20230317158A1 (en) * 2022-03-30 2023-10-05 Crossbar, Inc. Error correction for identifier data generated from unclonable characteristics of resistive memory

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100211851A1 (en) * 2009-02-17 2010-08-19 Robert William Dixon Data storage system with non-volatile memory for error correction
CN102142282A (zh) * 2011-02-21 2011-08-03 北京理工大学 一种NAND Flash存储芯片ECC校验算法的识别方法
US20110283166A1 (en) * 2010-05-14 2011-11-17 Samsung Electronics Co., Ltd Storage device having a non-volatile memory device and copy-back method thereof
CN102969028A (zh) * 2012-10-18 2013-03-13 记忆科技(深圳)有限公司 一种ecc动态调整方法、系统及闪存

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008310896A (ja) * 2007-06-15 2008-12-25 Spansion Llc 不揮発性記憶装置、不揮発性記憶システムおよび不揮発性記憶装置の制御方法
JP2009087509A (ja) * 2007-10-03 2009-04-23 Toshiba Corp 半導体記憶装置
US20090125790A1 (en) * 2007-11-13 2009-05-14 Mcm Portfolio Llc Method and Apparatus of Automatically Selecting Error Correction Algorithms by a NAND Flash Controller
JP4856110B2 (ja) * 2008-03-01 2012-01-18 株式会社東芝 チェンサーチ装置およびチェンサーチ方法
US8413015B2 (en) * 2009-09-21 2013-04-02 Sandisk Technologies Inc. Nonvolatile memory controller with scalable pipelined error correction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100211851A1 (en) * 2009-02-17 2010-08-19 Robert William Dixon Data storage system with non-volatile memory for error correction
US20110283166A1 (en) * 2010-05-14 2011-11-17 Samsung Electronics Co., Ltd Storage device having a non-volatile memory device and copy-back method thereof
CN102142282A (zh) * 2011-02-21 2011-08-03 北京理工大学 一种NAND Flash存储芯片ECC校验算法的识别方法
CN102969028A (zh) * 2012-10-18 2013-03-13 记忆科技(深圳)有限公司 一种ecc动态调整方法、系统及闪存

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110069357A (zh) * 2018-01-22 2019-07-30 三星电子株式会社 集成电路存储器装置及其操作方法
CN116431382A (zh) * 2023-06-12 2023-07-14 深圳大普微电子科技有限公司 纠错单元管理方法、存储控制芯片及闪存设备
CN116431382B (zh) * 2023-06-12 2023-09-29 深圳大普微电子科技有限公司 纠错单元管理方法、存储控制芯片及闪存设备

Also Published As

Publication number Publication date
CN105518800B (zh) 2018-11-30
US20160132388A1 (en) 2016-05-12
WO2014199199A1 (zh) 2014-12-18

Similar Documents

Publication Publication Date Title
US10198221B2 (en) Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices
CN107393596B (zh) 半导体存储设备和操作其的方法
US9928140B2 (en) Non-volatile memory device and method of operating the same
CN105518800A (zh) 半导体存储器装置及其ecc方法
US20180060194A1 (en) Semiconductor Memory Devices with Error Correction and Methods of Operating the Same
KR102002925B1 (ko) 메모리 모듈, 그것을 포함하는 메모리 시스템, 그것의 구동 방법
US10338835B2 (en) Memory device
US9274721B2 (en) Nonvolatile memory device and data management method thereof
US9042160B1 (en) Memory device with resistive random access memory (ReRAM)
KR102240162B1 (ko) 자기장-지원 메모리 동작
US20140192588A1 (en) Nonvolatile Memory Device and Read Method Thereof
US9431083B2 (en) Nonvolatile memory device and storage device having the same
US9947380B2 (en) Adjustable read reference voltage to reduce errors in memory devices
US20140340959A1 (en) Nonvolatile memory device and data processing method thereof
US11527276B2 (en) Semiconductor storage device
US9952789B2 (en) Memory systems and electronic devices including nonvolatile memory modules
US20200098411A1 (en) Semiconductor memory device
US20150262640A1 (en) Memory system
US9767863B2 (en) Redundancy memory device comprising a plurality of selecting circuits
KR101773660B1 (ko) 메모리 내부의 자체 에러 검출을 통한 선택적 리프레시를 이용한 메모리 제어 방법, 장치 및 시스템
CN109712654B (zh) 半导体存储装置
JP6557488B2 (ja) 不揮発性メモリ装置及びそれを含む格納装置、それの書込み方法及び読出し方法
US11087809B2 (en) Semiconductor memory device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant