CN105517320A - High-frequency board and processing method thereof - Google Patents
High-frequency board and processing method thereof Download PDFInfo
- Publication number
- CN105517320A CN105517320A CN201510849637.2A CN201510849637A CN105517320A CN 105517320 A CN105517320 A CN 105517320A CN 201510849637 A CN201510849637 A CN 201510849637A CN 105517320 A CN105517320 A CN 105517320A
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- CN
- China
- Prior art keywords
- insulating film
- film layer
- high frequency
- adhesive layer
- processing method
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0145—Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0158—Polyalkene or polyolefin, e.g. polyethylene [PE], polypropylene [PP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The embodiment of the invention relates to a high-frequency board comprising a circuit board, a bonding layer, and an insulating film layer. The bonding layer and the insulating film layer are laminated on the circuit surface of the circuit board directly. The dielectric constant of the insulating film layer is not larger than 5; the thickness of the insulating film layer is not larger than 15 microns; and the thickness of the bonding layer is not larger than 13 microns. On the basis of the matched thickness arrangement of the insulating film layer and the bonding layer, a problem of mismatching of interface dielectric constants due to material property differences can be solved. Meanwhile, wit the insulating film layer with the low dielectric constant, the voltage standing-wave ration of the high-frequency board can be effectively reduced. In addition, a processing method for the high-frequency board has a simple process and is easy to implement.
Description
Technical field
The present invention relates to circuit board processing and manufacturing field, be specifically related to a kind of high frequency plate and processing method thereof.
Background technology
Along with electronics, communications industry fast development, the high frequency printed circuit boards (HighFrequencyPCB is called for short: high frequency plate or HFPCB) that electromagnetic frequency is higher is widely used.
Along with the fine degree of high frequency plate circuit design and complexity significantly promote, printed circuit board manufacturing process is had higher requirement.In prior art, after in high frequency plate, the base material of bearer circuit exposes in atmosphere, often oxidized by the air because of environmental factor, therefore, industry generally uses insulated barriers material to carry out protection circuit copper face.In prior art, high frequency plate generally adopts solder resist or PI (polyimides) film protection circuit and copper face, thus ensures the electric property stability of product signal.
Conventional insulated barriers material has solder resist, PI film etc.Liquid photopolymerizable solder resist (being commonly called as green oil) is as the one in solder resist, need before printing carry out polishing to coated substrates surface and clean, because high frequency material itself has layer of surface active layer, after nog plate and polishing or damage active layer, cause the adhesion of solder resist and circuit copper face poor.Meanwhile, commonly use solder resist corrosion resistance, electric durability can be poor, density is little, can not meet the application of the high-frequency product of some wireless telecommunications.PI membrane material is that to belong to dielectric constant low, and a kind of insulated barriers material that dielectric loss is little, can be met the transmission demand of high-frequency signal, generally be sticked to the surface of high frequency plate by adhesive.But, in actual production, due to PI film, dielectric adhesive layer and circuit board nature difference, interface dielectric constant is very easily caused not mate, finally there is signal transmssion line open-end, short company, impedance mismatch, occur reflection or form the problems such as two kinds of wave frequencies, transmission speed be identical, voltage standing wave ratio (VSWR) is up to 1.5-2.5.
Summary of the invention
To be solved by this invention be in existing high frequency plate insulated barriers material the problem affecting circuit board performance is set.
For solving the problems of the technologies described above, the embodiment of the present invention provides a kind of high frequency plate, comprises circuit board, is stacked in adhesive layer in the circuit face of described circuit board and insulating film layer successively; The dielectric constant of insulating film layer is not more than 5; The thickness of described insulating film layer is not more than 15 μm, and the thickness of described adhesive layer is not more than 13 μm.
The monofilm that described insulating film layer is polytetrafluoroethylene, at least one in polypropylene, poly-trifluoro-ethylene, density polyethylene film with high, polystyrene, polyphenylene oxide, Merlon, polysulfones, polyimides, polyformaldehyde, polyvinyl chloride, polymethyl methacrylate is formed or the stepped construction of multilayer film.
The dielectric constant of described adhesive layer is not more than 5.
The embodiment of the present invention provides a kind of processing method of high frequency plate, comprises the following steps:
Insulating film layer forms adhesive layer;
Described adhesive layer is arranged on the circuit surface of circuit board, to form to be laminated;
Described to be laminated is placed between two base plates, along carrying out pressing perpendicular to described base plate place in-plane to described to be laminated;
Wherein, the dielectric constant of described insulating film layer is not more than 5, and the thickness of described insulating film layer is not more than 15 μm, and the thickness of described adhesive layer is not more than 13 μm.
Preferably, be also included in described insulating film layer and the step of the resilient coating for cushioning pressure in described pressing step is set between its described base plate.
More preferably, described resilient coating is layer of silica gel.
Preferably, be also included in described resilient coating and the step of release film is set between its described insulating film layer.
Preferably, described on insulating film layer, form adhesive layer step before, also comprise: the step described insulating film layer being cut and/or offered opening.
Preferably, on the described circuit surface described adhesive layer being arranged on circuit board before step, also comprise: the step that described circuit board is cleaned.
Preferably, described base plate is steel plate.
The technique scheme of the embodiment of the present invention has the following advantages compared to existing technology:
1, a kind of high frequency plate of providing of the embodiment of the present invention, 15 μm are not more than by making the thickness of the insulating film layer be stacked in the circuit face of circuit board, the thickness of adhesive layer is not more than 13 μm, thus by the insulating film layer of adaptation and the setting of bondline thickness, reduce the interface dielectric constant mismatch problem because Material property differences causes; Make the dielectric constant of insulating film layer be not more than 5 simultaneously, by the insulating film layer selecting dielectric constant lower, realize effective reduction of high frequency plate voltage standing wave ratio.
The processing method of a kind of high frequency plate 2, described in the embodiment of the present invention, comprises the following steps: on insulating film layer, form adhesive layer; Described adhesive layer is arranged on the circuit surface of circuit board, to be laminated of system; Described to be laminated is placed between two base plates, along carrying out pressing perpendicular to described base plate place in-plane to described to be laminated; The dielectric constant of insulating film layer is not more than 5, and the thickness of described insulating film layer is not more than 15 μm, and the thickness of described adhesive layer is not more than 13 μm.Not only technique simply, is easily implemented; And, by the insulating film layer of adaptation and the setting of bondline thickness, reduce the interface dielectric constant mismatch problem because Material property differences causes; Select the insulating film layer that dielectric constant is lower, thus realize effective reduction of high frequency plate voltage standing wave ratio.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of high frequency plate described in the embodiment of the present invention;
Fig. 2 is the flow chart of the processing method of high frequency plate described in the embodiment of the present invention;
Fig. 3 is view before to be laminated pressing described in the embodiment of the present invention;
In figure, Reference numeral is expressed as: 1-circuit board, 2-adhesive layer, 3-insulating film layer, to be laminated of 4-, 5-release film, 6-resilient coating, 71-first base plate, 72-second base plate.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.
Below in conjunction with accompanying drawing 1-3, the execution mode of the embodiment of the present invention is described in further detail.
Embodiment
The present embodiment provides a kind of high frequency plate, as shown in Figure 1, comprises circuit board 1, is stacked in adhesive layer 2 in the circuit face of circuit board 1 and insulating film layer 4 successively.
As the preferred embodiments of the present invention, the dielectric constant of insulating film layer 4 is not more than 5; The thickness of insulating film layer 4 is not more than 15 μm, and the thickness of adhesive layer 2 is not more than 13 μm.
In embodiment illustrated in fig. 1, circuit board 1 is single sided board, therefore, only in its circuit face, arranges adhesive layer 2 and insulating film layer 4.
As a kind of Alternate embodiments, oversampling circuit plate is double sided board, can arrange adhesive layer and insulating film layer respectively in the circuit face of its both sides.
The monofilm that insulating film layer 4 is polytetrafluoroethylene, at least one in polypropylene, poly-trifluoro-ethylene, density polyethylene film with high, polystyrene, polyphenylene oxide, Merlon, polysulfones, polyimides, polyformaldehyde, polyvinyl chloride, polymethyl methacrylate is formed or the stepped construction of multilayer film.
As a kind of Alternate embodiments, insulating film layer 4 is polyimides monofilm layer.
Preferably, the dielectric constant of adhesive layer is not more than 5; As a kind of Alternate embodiments, adhesive layer 2 is acrylic acid glue-line.
By the insulating film layer 4 of adaptation and the setting of adhesive layer 2 thickness, reduce the interface dielectric constant mismatch problem because Material property differences causes; Meanwhile, the insulating film layer 4 selecting dielectric constant lower, thus the effective reduction realizing high frequency plate voltage standing wave ratio.After tested, the voltage standing wave ratio of high frequency plate that the present embodiment provides is not more than 1.35.
The present embodiment provides a kind of processing method of high frequency plate, as shown in Figure 2, comprises the following steps:
S1, on insulating film layer 3, form adhesive layer 2.As a kind of Alternate embodiments, before the circuit surface of circuit board 1 is formed adhesive layer 2 step, also comprise: the step that circuit board 1 is cleaned.
As a kind of Alternate embodiments, before adhesive layer 2 is formed insulating film layer 3 step, also comprise: according to the shape of circuit board 1, insulating film layer 3 is cut and/or offered the step of opening.
S2, as shown in Figure 3, described adhesive layer 2 is arranged on the circuit surface of circuit board 1, to form to be laminated 4.
As a kind of Alternate embodiments, also first can form adhesive layer 2 on the circuit surface of circuit board 1, then form insulating film layer on adhesive layer 2.
S3, to be laminated 4 is placed between the first base plate 71 and the second base plate 72, along carrying out pressing perpendicular to base plate 71,72 place in-plane to be laminated 4.
As a kind of Alternate embodiments, in insulating film layer 3 and the step arranging the resilient coating 5 for cushioning pressure in pressing step between its first base plate 71.As a kind of Alternate embodiments, resilient coating 5 is layer of silica gel.
As a kind of Alternate embodiments, the first base plate 71 and the second base plate 72 are steel plate.
The processing method technique of the high frequency plate that the present embodiment provides simply, is easily implemented.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a high frequency plate, comprises circuit board, is stacked in adhesive layer in the circuit face of described circuit board and insulating film layer successively; It is characterized in that, the dielectric constant of described insulating film layer is not more than 5; The thickness of described insulating film layer is not more than 15 μm, and the thickness of described adhesive layer is not more than 13 μm.
2. high frequency plate according to claim 1, it is characterized in that, described insulating film layer is polytetrafluoroethylene, the stepped construction of monofilm that at least one in polypropylene, poly-trifluoro-ethylene, density polyethylene film with high, polystyrene, polyphenylene oxide, Merlon, polysulfones, polyimides, polyformaldehyde, polyvinyl chloride, polymethyl methacrylate is formed or multilayer film.
3. high frequency plate according to claim 1, is characterized in that, the dielectric constant of described adhesive layer is not more than 5.
4. a processing method for high frequency plate, is characterized in that, comprises the following steps:
Form adhesive layer;
The circuit surface of circuit board forms described adhesive layer stacked successively and insulating film layer, to form to be laminated;
Described to be laminated is placed between two base plates, along carrying out pressing perpendicular to described base plate place in-plane to described to be laminated;
Wherein, the dielectric constant of described insulating film layer is not more than 5, and the thickness of described insulating film layer is not more than 15 μm, and the thickness of described adhesive layer is not more than 13 μm.
5. the processing method of high frequency plate according to claim 4, is characterized in that, is also included in described insulating film layer and between its described base plate, arranges the step of the resilient coating for cushioning pressure in described pressing step.
6. the processing method of high frequency plate according to claim 5, is characterized in that, described resilient coating is layer of silica gel.
7. the processing method of the high frequency plate according to claim 5 or 6, is characterized in that, is also included in described resilient coating and between its described insulating film layer, arranges the step of release film.
8. the processing method of the high frequency plate according to any one of claim 4-7, is characterized in that, described on insulating film layer, form adhesive layer step before, also comprise: the step described insulating film layer being cut and/or offered opening.
9. the processing method of the high frequency plate according to any one of claim 4-8, is characterized in that, on the described circuit surface described adhesive layer being arranged on circuit board before step, also comprises: the step cleaned described circuit board.
10. the processing method of the high frequency plate according to any one of claim 4-9, is characterized in that, described base plate is steel plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510849637.2A CN105517320B (en) | 2015-11-27 | 2015-11-27 | A kind of high frequency plate and its processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510849637.2A CN105517320B (en) | 2015-11-27 | 2015-11-27 | A kind of high frequency plate and its processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105517320A true CN105517320A (en) | 2016-04-20 |
| CN105517320B CN105517320B (en) | 2018-12-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510849637.2A Active CN105517320B (en) | 2015-11-27 | 2015-11-27 | A kind of high frequency plate and its processing method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0946012A (en) * | 1995-07-28 | 1997-02-14 | Shinko Kagaku Kogyo Kk | Low dielectric constant flexible wiring board |
| CN1551716A (en) * | 2003-02-27 | 2004-12-01 | �ն��繤��ʽ���� | Method of forming composite insulating layer and process of producing wiring board |
| CN101711101A (en) * | 2009-11-13 | 2010-05-19 | 深南电路有限公司 | Process for pressing galvanized PCB boards and multi-layer PCB board |
| CN101868118A (en) * | 2010-05-28 | 2010-10-20 | 珠海国能电力科技发展有限公司 | High-frequency circuit substrate and production method thereof |
-
2015
- 2015-11-27 CN CN201510849637.2A patent/CN105517320B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0946012A (en) * | 1995-07-28 | 1997-02-14 | Shinko Kagaku Kogyo Kk | Low dielectric constant flexible wiring board |
| CN1551716A (en) * | 2003-02-27 | 2004-12-01 | �ն��繤��ʽ���� | Method of forming composite insulating layer and process of producing wiring board |
| CN101711101A (en) * | 2009-11-13 | 2010-05-19 | 深南电路有限公司 | Process for pressing galvanized PCB boards and multi-layer PCB board |
| CN101868118A (en) * | 2010-05-28 | 2010-10-20 | 珠海国能电力科技发展有限公司 | High-frequency circuit substrate and production method thereof |
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| Publication number | Publication date |
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| CN105517320B (en) | 2018-12-18 |
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Effective date of registration: 20220622 Address after: 3007, Hengqin international financial center building, No. 58, Huajin street, Hengqin new area, Zhuhai, Guangdong 519031 Patentee after: New founder holdings development Co.,Ltd. Patentee after: CHONGQING FOUNDER HI-TECH ELECTRONIC Inc. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: CHONGQING FOUNDER HI-TECH ELECTRONIC Inc. |