CN105514298B - A kind of thin-film packing structure and film encapsulation method - Google Patents
A kind of thin-film packing structure and film encapsulation method Download PDFInfo
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- CN105514298B CN105514298B CN201511028107.8A CN201511028107A CN105514298B CN 105514298 B CN105514298 B CN 105514298B CN 201511028107 A CN201511028107 A CN 201511028107A CN 105514298 B CN105514298 B CN 105514298B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
A kind of thin-film packing structure of the present invention including several stackings and is arranged at intervals on the planarization layer on substrate and barrier layer；It is not less than the adjacent projected area in the preceding barrier layer on the substrate in the projected area of the rear barrier layer on the substrate；And the part edge that the barrier layer projects on substrate before the projection of the rear barrier layer on the substrate is covered on.Gap between the adjacent barrier layer is not externally exposed in environment entirely, effectively stops the lateral penetration of water oxygen, and packaging effect is good.Film encapsulation method of the present invention is realized by the method that exposure mask compensates and covers first barrier layer in rear barrier layer, is not only able to effectively reduce mask plate quantity, reduces mask plate cost.Moreover, can be realized share it is multiple prepare chamber, be effectively saved the production time, improve production capacity；Meanwhile improving equipment flexibility.
Description
Technical field
The present invention relates to organic photoelectric fields, and in particular to a kind of economic, efficient thin-film packing structure and thin-film package
Method.
Background technique
(full name in English is Organic Light-Emitting Diodes to organic electroluminescent LED, referred to as
OLED), organic solar batteries (full name in English is Organic Photovoltaic, referred to as OPV), organic film field effect
Transistor (full name in English is Organic Thin Film Transistor, referred to as OTFT), organic light pumped laser (English
Literary full name be Organic Semiconductor Lasers, referred to as OSL) etc. organic electro-optic devices most glamour place just
It can be achieved on flexibility.Flexible substrate and thin-film package (thin film encapsulation, TFE) technology can make
Organic electro-optic device bending, and arbitrary shape can be rolled into.
Organic electro-optic device is very sensitive to the erosion of water oxygen, and micro water oxygen will result in the oxygen of organic material in device
The deterioration for changing, crystallizing perhaps electrode influences the service life of device or directly results in the damage of device.In the prior art, it will usually
Using organic film and inorganic thin film packaging is arranged alternately, to reach water oxygen barriering effect.For example, as shown in Fig. 1,
Being cascading on substrate 1 has luminescent layer 2, the first barrier layer 31, the first planarization layer 41, the second barrier layer 32, second flat
Smoothization layer 42, third barrier layer 33, the first barrier layer 31 directly cover surface and side wall of the luminescent layer 2 far from substrate 1, the second resistance
Interlayer 32 directly covers the side wall of surface of first planarization layer 41 far from substrate 1, side wall and the first barrier layer 31, third resistance
Interlayer 33 directly covers the side wall of surface of second planarization layer 42 far from substrate 1, side wall and the second barrier layer 32.This layer
Folded mechanism ensure that the compactness and planarization of film forming, avoid the growth of defect in film, improve the water oxygen barrier energy of device
Power.However, in above-mentioned device, since the area coverage of the barrier layer 31,32,33 is different, so needing 3 different exposure masks
Plate (mask), the production cost is very high.
For this purpose, technical staff devises encapsulating structure as shown in Figure 2, the first barrier layer 31, the second barrier layer 32, third
33 shape of barrier layer is identical.Although need to only use one piece of mask plate when device shown in Fig. 2 prepares barrier layer 31,32,33, have
Effect reduces production cost.However, since the edge of the barrier layer 31,32,33 is not extended on substrate 1, water oxygen can be with
Enter device by the gap between film layer, packaging effect is poor.
Summary of the invention
For this purpose, to be solved by this invention is that existing device packaging method low cost and potting effect can not get both
Problem, to provide a kind of thin-film packing structure and film encapsulation method at low cost, packaging effect is good.
In order to solve the above technical problems, The technical solution adopted by the invention is as follows:
A kind of thin-film packing structure of the present invention including several stackings and is arranged at intervals on the planarization layer on substrate
And barrier layer；The projected area of the rear barrier layer on the substrate not less than it is adjacent in the preceding barrier layer in the base
Projected area on plate；And before the projection of the rear barrier layer on the substrate is covered on the barrier layer in substrate upslide
The part edge of shadow.
Adjacent formerly projection of the barrier layer on substrate is by the adjacent throwing in the rear barrier layer on the substrate
The fringe region that shadow is covered is not overlapped or full weight is not closed.
Preferably, any barrier layer with a thickness of 20nm~200nm.
Preferably, any planarization layer with a thickness of 100nm~5000nm.
Preferably, any planarization layer is organic layer, and any barrier layer is inorganic layer.
It is highly preferred that any planarization layer is polyacrylic acid ester layer, parylene layer, polyurea layer, gathers to benzene two
At least one of formic acid ethylene glycol ester layer, polyethylene naphthalate layer, polystyrene layer；Any barrier layer is oxygen
Change aluminium layer, silicon oxide layer, silicon nitride layer, titanium oxide layer, zirconium oxide layer, nitrogen oxidation aluminium layer, silicon oxynitride layer, in amorphous carbon layer
It is at least one.
A kind of film encapsulation method of the present invention, step are as follows: formed on substrate it is several stacking and it is spaced
Planarization layer and barrier layer；The barrier layer is prepared by masking process, and at least one layer passes through exposure mask in the rear barrier layer
The preparation of (mask offset) function is compensated, so that the resistance before the projection of the rear barrier layer on the substrate is covered on
The part edge that interlayer projects on substrate.
Preferably, the film encapsulation method, includes the following steps:
S1, using mask plate, by masking process, on the substrate directly formed the first barrier layer；
S2, using the mask plate, the second barrier layer is formed extremely on first barrier layer by exposure mask compensation function
N barrier layer, N are the natural number greater than 2.
The direction of the compensation of exposure mask described in the exposure mask compensation function is the center position far from the mask plate.
Preferably, the compensation direction of the adjacent exposure mask compensation process described twice is different.
The preparation method of the planarization layer is inkjet printing-ultra-violet curing, flash distillation hair-ultra-violet curing, chemical vapor deposition
At least one of product, gas-phase polymerization, plasma polymerization.
The preparation method of the barrier layer is d.c. sputtering, radio-frequency sputtering, reactive sputtering, plasma enhanced chemical vapor
At least one of deposition, atomic layer deposition.
The above technical solution of the present invention has the following advantages over the prior art:
A kind of thin-film packing structure described in the embodiment of the present invention including several stackings and is arranged at intervals on flat on substrate
Smoothization layer and barrier layer；Exist not less than adjacent in the preceding barrier layer in the projected area of the rear barrier layer on the substrate
Projected area on the substrate；And before the projection of the rear barrier layer on the substrate is covered on the barrier layer in base
The part edge projected on plate.Gap between the adjacent barrier layer is not externally exposed in environment entirely, effectively blocking water oxygen
Lateral penetration, packaging effect is good.
Film encapsulation method described in the embodiment of the present invention, step are as follows: form several stackings on substrate and be spaced setting
Planarization layer and barrier layer；The barrier layer is prepared by masking process, and at least one layer of pass through in the rear barrier layer is covered
Film compensates the preparation of (mask offset) function, so that described before the projection of the rear barrier layer on the substrate is covered on
The part edge that barrier layer projects on substrate.The film encapsulation method is realized by the method that exposure mask compensates in rear resistance
Interlayer covers first barrier layer, is not only able to effectively reduce mask plate quantity, reduces mask plate cost.Moreover, can be realized altogether
Chamber is prepared with multiple, the production time is effectively saved, improves production capacity；Meanwhile improving equipment flexibility.
Film encapsulation method described in the embodiment of the present invention, simple process easily realize, and between the adjacent barrier layer
Gap be not externally exposed in environment entirely, effectively stop the lateral penetration of water oxygen, packaging effect is good.
Detailed description of the invention
In order to make the content of the present invention more clearly understood, it below according to specific embodiments of the present invention and combines
Attached drawing, the present invention is described in further detail, wherein
Fig. 1 is a kind of cross-sectional view of thin-film packing structure in the prior art；
Fig. 2 is the cross-sectional view of another thin-film packing structure in the prior art；
Fig. 3 is the cross-sectional view of film seal structure described in the embodiment of the present invention；
Fig. 4 is the flow chart of film encapsulation method described in the embodiment of the present invention；
Fig. 5 is the schematic diagram of exposure mask compensation function described in the embodiment of the present invention.
Appended drawing reference indicates in figure are as follows: 1- substrate, 2- luminescent layer, the first barrier layer of 31-, the first planarization layer of 41-, 32-
Second barrier layer, the second planarization layer of 42-, 33- third barrier layer, 5- mask plate.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, providing these embodiments, so that the disclosure will be thorough and complete, and design of the invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the area Ceng He can be exaggerated
The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting
" another element "upper" when, which can be arranged directly on another element, or there may also be intermediary elements.
On the contrary, intermediary element is not present when element is referred to as on " being formed directly into " or " being set up directly on " another element.
It should be understood that the function of " exposure mask compensation " of the present invention are as follows: in masking process, when product enters work
After skill chamber, mask plate is aligned with product, and mask plate has all directions regulatory function in plane, with realization and product aligning
Purpose.After product and mask plate align, by the setting on software, the mask plate offset function of different directions is realized
Energy.Technique is carried out after offset, realizes final technological effect.
Embodiment
The present embodiment provides a kind of thin-film packing structures, as shown in figure 3, including the first resistance being stacked on substrate 1
Interlayer 31, the first planarization layer 41, the second barrier layer 32, the second planarization layer 42, third barrier layer 33.
The projected area of second barrier layer 32 on substrate 1 is not less than projection of first barrier layer 31 on the substrate 1
Area simultaneously covers the part edge of the first barrier layer 31 and extends on substrate 1, the perspective plane of third barrier layer 33 on substrate 1
Part edge and the extension of projected area and covering second barrier layer 32 of the product not less than the second barrier layer 32 on the substrate 1
To substrate 1.
As convertible embodiment of the invention, it is not less than phase in the projected area of the rear barrier layer on the substrate
Projected area of the neighbour in the preceding barrier layer on the substrate, and the projection covering in the rear barrier layer on the substrate
In the part edge that the preceding barrier layer projects on substrate, the purpose of the present invention may be implemented, belong to protection of the invention
Range.
As an embodiment of the present invention, in the present embodiment, as shown in figure 3, the throwing of the second barrier layer 32 on substrate 1
Shadow covers the projection of the fringe region and third barrier layer 33 of the projection of the first barrier layer 31 on substrate 1 on substrate 1 and covers
The fringe region of the projection of second barrier layer 32 on substrate 1 is different.
As convertible embodiment of the invention, adjacent formerly projection of the barrier layer on substrate is by adjacent in rear institute
State the fringe region that the projection of barrier layer on the substrate is covered be not overlapped or not full weight close, may be implemented of the invention
Purpose belongs to the scope of protection of the present invention.
The first barrier layer 31 is silicon nitride layer in the present embodiment, with a thickness of 100nm；First planarization layer 41 is polyacrylic acid
Ester layer, with a thickness of 200nm；Second barrier layer 32 is silicon nitride layer, with a thickness of 100nm；Second planarization layer 42 is polyacrylic acid
Ester layer, with a thickness of 200nm；Third barrier layer 33 is silicon nitride layer, with a thickness of 100nm.
As convertible embodiment of the invention, any barrier layer 31,32,33 with a thickness of 20nm~200nm, appoint
One planarization layer 41,42 with a thickness of 100nm~5000nm；Any planarization layer 41,42 is organic layer, preferably
Polyacrylic acid ester layer, parylene layer, polyurea layer, polyethylene terephthalate layer, polyethylene naphthalate layer,
At least one of polystyrene layer；Any barrier layer 31,32,33 is inorganic layer, preferably alumina layer, silica
At least one of layer, silicon nitride layer, titanium oxide layer, zirconium oxide layer, nitrogen oxidation aluminium layer, silicon oxynitride layer, amorphous carbon layer,
To achieve the object of the present invention, belong to the scope of protection of the present invention.
As convertible embodiment of the invention, the barrier layer, the quantity of the planarization layer are without being limited thereto, and at least two
Layer barrier layer, one layer of planarization layer form stacking, spacer structure on substrate, are able to achieve the purpose of the present invention, belong to this hair
Bright protection scope.
The present embodiment provides a kind of packaging methods, as shown in figure 4, including the following steps:
S01, using mask plate 5, by masking process, on substrate 1 directly formed covering luminescent layer 2 the first barrier layer
31。
As an embodiment of the present invention, the first barrier layer 31 passes through chemical vapor deposition process in the present embodiment
(CVD) it prepares.
S02, the first planarization layer 41 is formed far from the surface of substrate 1 in the first barrier layer 31.
As an embodiment of the present invention, the first planarization layer 41 is prepared by InkJet printing processes in the present embodiment.
S03, as shown in figure 5, using mask plate 5, by exposure mask compensation function, directly formed and covered on the first barrier layer 31
Subregional second barrier layer 32 in surface and sidewall portion of lid the first planarization layer 41 and the first barrier layer 31 far from substrate 1.
As shown in arrow direction any in Fig. 5, the compensation direction of mask plate 5 is the center position far from exposure mask in exposure mask compensation function.
As an embodiment of the present invention, the second barrier layer 32 is silicon nitride layer in the present embodiment, with a thickness of 100nm,
It is prepared by chemical vapor deposition process (CVD).
Realize that posterior second barrier layer 32 covers the first first barrier layer 31 by the method that exposure mask compensates, so that step
Rapid S03 and step S01 can share the same mask plate 5, be not only able to effectively reduce mask plate quantity, reduce mask plate at
This.Moreover, can be realized share it is multiple prepare chamber, be effectively saved the production time, improve production capacity；Meanwhile it improving and setting
Standby flexibility.
S04, the second planarization layer 42 is formed far from the surface of substrate 1 in the second barrier layer 32；As of the invention one
Embodiment, the second planarization layer 42 is polyacrylic acid ester layer in the present embodiment, with a thickness of 200nm, by InkJet printing processes system
It is standby.
S05, by exposure mask compensation function, the second planarization layer 42 of covering and the are directly formed on the second barrier layer 32
Surface and sidewall portion subregional third barrier layer 33 of two barrier layers 32 far from substrate 1.As shown in arrow direction in Fig. 4, cover
The compensation direction of mask plate 5 is the center position far from mask plate in film compensation function, and in this step, exposure mask compensation direction with
Compensation direction in step S03 is different.
As an embodiment of the present invention, third barrier layer 33 is silicon nitride layer in the present embodiment, with a thickness of 100nm,
It is prepared by chemical vapor deposition process (CVD).
The preparation method of the planarization layer 41,42 is selected from but not limited to rotary coating, slot coated, inkjet printing-purple
At least one of outer solidification, flash distillation hair-ultra-violet curing, chemical vapor deposition, gas-phase polymerization, plasma polymerization；The resistance
The preparation method of interlayer 31,32,33 selected from but not limited to d.c. sputtering, radio-frequency sputtering, reactive sputtering, chemical vapor deposition, etc.
Gas ions enhance at least one of chemical vapor deposition, atomic layer deposition；It is able to achieve the purpose of the present invention, belongs to the present invention
Protection scope.
As convertible embodiment of the invention, the barrier layer number prepared using exposure mask compensation function is without being limited thereto, until
Few one layer is prepared in the rear barrier layer by exposure mask compensation function, and the barrier layer is prepared by masking process, in rear institute
Surface and side wall of the barrier layer far from substrate before barrier layer is covered on are stated, and is extended on the substrate, this is able to achieve
The purpose of invention, belongs to the scope of protection of the present invention.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
Variation is still in the protection scope of this invention.
Claims (10)
1. a kind of thin-film packing structure including several stackings and is arranged at intervals on the planarization layer on substrate and barrier layer；It is special
Sign is, the projected area of the rear barrier layer on the substrate not less than it is adjacent in the preceding barrier layer in the substrate
On projected area；The barrier layer projects on substrate before the projection of the rear barrier layer on the substrate is covered on
It part edge and extends on substrate；The barrier layer covers the planarization layer adjacent thereto below.
2. thin-film packing structure according to claim 1, which is characterized in that the adjacent formerly barrier layer is on substrate
Projection is not overlapped by the adjacent fringe region covered in the projection of the rear barrier layer on the substrate or full weight is not closed.
3. thin-film packing structure according to claim 1, which is characterized in that any barrier layer with a thickness of 20nm~
200nm；Any planarization layer with a thickness of 100nm~5000nm.
4. thin-film packing structure according to claim 1-3, which is characterized in that any planarization layer is to have
Machine layer, any barrier layer are inorganic layer.
5. thin-film packing structure according to claim 4, which is characterized in that any planarization layer is polyacrylate
Layer, parylene layer, polyurea layer, polyethylene terephthalate layer, polyethylene naphthalate layer, polystyrene layer
At least one of；Any barrier layer is alumina layer, silicon oxide layer, silicon nitride layer, titanium oxide layer, zirconium oxide layer, nitrogen
At least one of alumina layer, silicon oxynitride layer, amorphous carbon layer.
6. a kind of film encapsulation method, step are as follows: formed on substrate it is several stacking and spaced planarization layer and barrier
Layer；It is characterized in that, the barrier layer is prepared by masking process, and at least one layer passes through exposure mask in the rear barrier layer and compensates
(mask offset) function preparation, so that the barrier layer before the projection of the rear barrier layer on the substrate is covered on
It the part edge that is projected on substrate and extends on substrate, the barrier layer covering planarization adjacent thereto below
Layer.
7. film encapsulation method according to claim 6, which comprises the steps of:
S1, using mask plate, by masking process, on the substrate directly formed the first barrier layer；
S2, using the mask plate, formed on first barrier layer by exposure mask compensation function the second barrier layer to N hinder
Interlayer, N are the natural number greater than 2.
8. film encapsulation method according to claim 7, which is characterized in that exposure mask described in the exposure mask compensation function is mended
The direction repaid is the center position far from the mask plate.
9. film encapsulation method according to claim 7 or 8, which is characterized in that the adjacent exposure mask compensation process described twice
Compensation direction it is different.
10. film encapsulation method according to claim 6, which is characterized in that the preparation method of the planarization layer is spray
Black printing-ultra-violet curing, flash distillation hair-ultra-violet curing, chemical vapor deposition, gas-phase polymerization, at least one in plasma polymerization
Kind；The preparation method of the barrier layer be d.c. sputtering, radio-frequency sputtering, reactive sputtering, plasma enhanced chemical vapor deposition,
At least one of atomic layer deposition.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6486410B2 (en) * | 2016-07-12 | 2019-03-20 | ウォニク アイピーエス カンパニー リミテッド | Substrate processing system and substrate processing method |
| JP6717700B2 (en) * | 2016-07-28 | 2020-07-01 | 株式会社ジャパンディスプレイ | Display device manufacturing method |
| CN107644943A (en) * | 2017-04-17 | 2018-01-30 | 宁波安特弗新材料科技有限公司 | A kind of steam oxygen blocking barrier film and preparation method thereof |
| CN107104199A (en) | 2017-04-19 | 2017-08-29 | 武汉华星光电技术有限公司 | Display panel and its manufacture method |
| CN110323350B (en) * | 2018-03-29 | 2021-01-29 | 京东方科技集团股份有限公司 | Thin film packaging method, thin film packaging structure and display device |
| CN109860446A (en) * | 2019-03-07 | 2019-06-07 | 拓米(成都)应用技术研究院有限公司 | Sandwich structure laminated film and preparation method thereof for packaging film lithium battery |
| CN111411346A (en) * | 2020-04-14 | 2020-07-14 | 西安近代化学研究所 | Flexible inorganic-organic composite water vapor oxygen barrier film and low-temperature preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8247809B2 (en) * | 2010-10-19 | 2012-08-21 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display |
| CN103325960A (en) * | 2012-03-23 | 2013-09-25 | 昆山工研院新型平板显示技术中心有限公司 | Membrane packaging method of organic optoelectronic device |
| CN104576959A (en) * | 2013-10-15 | 2015-04-29 | 三星显示有限公司 | Flexible organic light emitting diode display and manufacturing method thereof |
| CN104882565A (en) * | 2015-05-14 | 2015-09-02 | 京东方科技集团股份有限公司 | Film packaging structure and manufacture method thereof and display device |
| CN104900681A (en) * | 2015-06-09 | 2015-09-09 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and forming method thereof |
| CN205452362U (en) * | 2015-12-31 | 2016-08-10 | 固安翌光科技有限公司 | Thin film packaging structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7612498B2 (en) * | 2003-11-27 | 2009-11-03 | Toshiba Matsushita Display Technology Co., Ltd. | Display element, optical device, and optical device manufacturing method |
| TWI381569B (en) * | 2008-12-30 | 2013-01-01 | Ind Tech Res Inst | Organic light emitting diode apparatus and package method thereof |
| KR101155904B1 (en) * | 2010-01-04 | 2012-06-20 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
-
2015
- 2015-12-31 CN CN201511028107.8A patent/CN105514298B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8247809B2 (en) * | 2010-10-19 | 2012-08-21 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display |
| CN103325960A (en) * | 2012-03-23 | 2013-09-25 | 昆山工研院新型平板显示技术中心有限公司 | Membrane packaging method of organic optoelectronic device |
| CN104576959A (en) * | 2013-10-15 | 2015-04-29 | 三星显示有限公司 | Flexible organic light emitting diode display and manufacturing method thereof |
| CN104882565A (en) * | 2015-05-14 | 2015-09-02 | 京东方科技集团股份有限公司 | Film packaging structure and manufacture method thereof and display device |
| CN104900681A (en) * | 2015-06-09 | 2015-09-09 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and forming method thereof |
| CN205452362U (en) * | 2015-12-31 | 2016-08-10 | 固安翌光科技有限公司 | Thin film packaging structure |
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| CN105514298A (en) | 2016-04-20 |
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