CN105514241B - A kind of light emitting diode with high reliability transparency conducting layer - Google Patents
A kind of light emitting diode with high reliability transparency conducting layer Download PDFInfo
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- CN105514241B CN105514241B CN201610018937.0A CN201610018937A CN105514241B CN 105514241 B CN105514241 B CN 105514241B CN 201610018937 A CN201610018937 A CN 201610018937A CN 105514241 B CN105514241 B CN 105514241B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Abstract
A kind of light emitting diode with high reliability transparency conducting layer is related to the production technical field of light emitting diode.The present invention directly forms effective current expansion by epitaxial growth, one layer of highly conductive epitaxial layer with the electric energy and optical property identical with transparent conductive layer of setting by this highly conductive epitaxial layer.P-type current expansion effect is greatlyd improve, reduces the series resistance of light emitting diode, reduces operating voltage, effectively improves the luminous efficiency of light emitting diode.Since highly conductive epitaxial layer is directly by being formed, chip process is reduced, effectively reduces chip cost.
Description
Technical field
The present invention relates to the production technical fields of light emitting diode.
Background technology
Light emitting diode has low-power consumption, size small and high reliability, as light source of new generation by great
Favor.As gallium nitride base blue green LED technology is constantly progressive so that LED obtains unprecedented hair in each application field
Exhibition.
Particularly small space distance LED display screen is shown up prominently on the market in recent years, proposes that higher reliability will to LED
It asks.As small space distance LED display screen main composition part, the chip structure used at present all has blue green LED substantially
There are thermal mismatchings for the epitaxial structure of ITO conductive transparent layers, ITO conductive transparent layers and chip.Have centainly to the reliability of LED
It influences.
Invention content
The invention aims to improve LED reliabilities, increase the luminous efficiency of light emitting diode, reduce the making of chip
Cost proposes a kind of light emitting diode with high reliability transparency conducting layer.
The present invention include substrate and successively epitaxial growth in the buffer layer, unintentional doped layer, the first type of substrate the same side
Conductive layer, active layer, electronic barrier layer, Second-Type conductive layer, Second-Type contact layer, epitaxial growth on Second-Type contact layer
Layer of transparent high connductivity layer and second layer high connductivity layer, in the first layer transparent high conductive layer and second layer high connductivity layer material
It is doped respectively with Hf elements；First electrode is connected on the first type conductive layer, and it is highly conductive that second electrode is connected to the second layer
On layer.
The present invention has the electric energy and optical property identical with transparent conductive layer by epitaxial growth, one layer of setting
Highly conductive epitaxial layer directly forms effective current expansion by this highly conductive epitaxial layer.Greatly improve p-type current expansion effect
Fruit reduces the series resistance of light emitting diode, reduces operating voltage, effectively improves the luminous efficiency of light emitting diode.Due to
Highly conductive epitaxial layer is directly by being formed, and reduces chip process, effectively reduces chip cost.
Further, first layer transparent high conductive layer of the present invention is using three-five compound as material, and doping concentration
Hf elements for 1.0E+20~1.0E+21.The doping that first layer transparent high conductive layer is adjusted by the doping of Hf elements is dense
Degree.So that nitride epitaxial material reaches the doping concentration of more than 1.0E+20, there is preferable current expansion effect, and have again
Have good light permeability matter.
The three-five compound is GaN, AlGaInN or GaInN.Using being both that nitride three-five compound is replaced
Transparency conducting layer is served as materials such as ITO, ZnO, the reliability of device can be effectively improved and reduces the cost of manufacture of device.
The thickness of the first layer transparent high conductive layer is 20~200nm.First high connductivity layer thickness is thicker, and electric current expands
Open up that effect is better, but due to GaN base light emitting diode active area there are material mismatch caused by internal stress it is larger, lead to the
One high connductivity layer cannot be too thick, avoids result in crystal quality and is seriously deteriorated.
The second layer transparent high conductive layer is using three-five compound as material, and doping concentration is 1.0E+21~1.0E+
22 Hf elements.Its doping concentration target is reached by the doping for improving its Hf element.So that nitride epitaxial material reaches
The doping concentration of more than 1.0E+22 has preferable Ohmic contact and current expansion effect, and but also with there is good light permeability
Matter.
The three-five compound is GaN, AlGaInN or GaInN.Using being both that nitride three-five compound is replaced
Transparency conducting layer is served as materials such as ITO, ZnO, the reliability of device can be effectively improved and reduces the cost of manufacture of device.
The thickness of the second layer transparent high conductive layer is 3~10nm.Second high connductivity layer thickness requirement is suitble to certain
Section, thickness is thicker, and its current expansion effect is better, but due to mixing a large amount of Hf elements, thickness is thicker, and its translucency is poorer.
GaN, GaInN material that the Second-Type contact layer is adulterated using Mg, Zn or p-type.
In the Second-Type contact layer material, Mg, Zn or p-type doping concentration are 1.0E+19~5.0E+20.It is mixed using this
Miscellaneous concentration range can just play the role of forming current tunnelling with high connductivity layer above.
Second-Type contact layer thickness is 1~5nm.Second-Type contact layer uses this thickness range, avoids to extension shape above
Into high connductivity layer crystal quality is caused drastically to deteriorate.
Description of the drawings
Fig. 1 is a kind of structure diagram of the present invention.
Specific embodiment
As shown in Figure 1, the present invention has buffer layer 2, unintentional doped layer 3, first in 1 the same side of substrate successively epitaxial growth
Type conductive layer 4, active layer 5, electronic barrier layer 6, Second-Type conductive layer 7, Second-Type contact layer 8, it is outer on Second-Type contact layer 8
Epitaxial growth thickness is the first layer transparent high conductive layer 9 of 20~200nm, and epitaxial growth is thick on first layer transparent high conductive layer 9
Spend the second layer high connductivity layer 10 for 3~10nm.First electrode 11 is connected on the first type conductive layer 4, and second electrode 12 connects
In second layer high connductivity layer 10.It is connect in first electrode 11 and active layer 5, electronic barrier layer 6, Second-Type conductive layer 7, Second-Type
Electrode isolation layers 13 are set between contact layer 8, first layer transparent high conductive layer 9, second layer high connductivity layer 10.
Wherein, GaN, GaInN material that Second-Type contact layer is adulterated using Mg, Zn or p-type, Mg, Zn or p-type doping concentration
For 1.0E+19~5.0E+20.The Second-Type contact layer thickness of growth is 1~5nm.
First layer transparent high conductive layer is using GaN, AlGaInN or GaInN three-five compound as material, and doping concentration is
1.0E+20 the Hf elements of~1.0E+21.
Second layer transparent high conductive layer is using GaN, AlGaInN or GaInN three-five compound as material, and doping concentration is
1.0E+21 the Hf elements of~1.0E+22.
Claims (4)
1. a kind of light emitting diode with high reliability transparency conducting layer, epitaxial growth is same in substrate including substrate and successively
The buffer layer of side, unintentional doped layer, the first type conductive layer, active layer, electronic barrier layer, Second-Type conductive layer, Second-Type connect
Contact layer, it is characterised in that epitaxial growth first layer transparent high conductive layer and second layer transparent high conductive on Second-Type contact layer
Layer, it is doped respectively with Hf elements in the first layer transparent high conductive layer and second layer transparent high conductive layer material；First
Electrode is connected on the first type conductive layer, and second electrode is connected on second layer transparent high conductive layer；
The first layer transparent high conductive layer is using three-five compound as material, and doping concentration is 1.0E+20~1.0E+21's
Hf elements；The three-five compound is GaN, AlGaInN or GaInN；The thickness of the first layer transparent high conductive layer is 20
~200nm；
The second layer transparent high conductive layer is using three-five compound as material, and doping concentration is 1.0E+21~1.0E+22's
Hf elements；The three-five compound is GaN, AlGaInN or GaInN；The thickness of the second layer transparent high conductive layer for 3~
10nm。
2. light emitting diode according to claim 1, it is characterised in that the Second-Type contact layer using p-type doping GaN,
GaInN materials.
3. light emitting diode according to claim 2, it is characterised in that in the Second-Type contact layer material, p-type doping is dense
It spends for 1.0E+19~5.0E+20.
4. according to claims 1 or 2 or 3 light emitting diodes, it is characterised in that Second-Type contact layer thickness for 1~
5nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610018937.0A CN105514241B (en) | 2016-01-13 | 2016-01-13 | A kind of light emitting diode with high reliability transparency conducting layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610018937.0A CN105514241B (en) | 2016-01-13 | 2016-01-13 | A kind of light emitting diode with high reliability transparency conducting layer |
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| Publication Number | Publication Date |
|---|---|
| CN105514241A CN105514241A (en) | 2016-04-20 |
| CN105514241B true CN105514241B (en) | 2018-07-03 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101278413A (en) * | 2005-09-29 | 2008-10-01 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic semiconductor chip |
| CN104282811A (en) * | 2013-07-10 | 2015-01-14 | 奚衍罡 | Light emitting device and method for making same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9330911B2 (en) * | 2011-08-22 | 2016-05-03 | Invenlux Limited | Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride |
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2016
- 2016-01-13 CN CN201610018937.0A patent/CN105514241B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101278413A (en) * | 2005-09-29 | 2008-10-01 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic semiconductor chip |
| CN104282811A (en) * | 2013-07-10 | 2015-01-14 | 奚衍罡 | Light emitting device and method for making same |
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| CN105514241A (en) | 2016-04-20 |
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